Polaronic Effect on Electrical Conductivity and Thermoelectric Power in Ga(Cu)$ V_{4} %$ S_{8} $

Abstract Polycrystalline $ V_{4} $-cluster compounds of $ GaV_{4} %$ S_{8} $ and its derivatives $ Ga_{0.90} $ $ Cu_{0.10} %$ V_{4} %$ S_{8} $ and $ Ga_{0.90} %$ Cu_{0.20} %$ V_{4} %$ S_{8} $ have been prepared at 800°C by solid-state reaction method. Although the cubic–rhombohedral phase transforma...
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Autor*in:	Naik, I. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2017

Schlagwörter:	Transition-metal compounds hopping conduction polaron theory

Anmerkung:	© The Minerals, Metals & Materials Society 2017

Übergeordnetes Werk:	Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 47(2017), 1 vom: 19. Okt., Seite 760-765
Übergeordnetes Werk:	volume:47 ; year:2017 ; number:1 ; day:19 ; month:10 ; pages:760-765

Links:	Volltext

DOI / URN:	10.1007/s11664-017-5858-1

Katalog-ID:	SPR021544158

Internformat


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520			\|a Abstract Polycrystalline $ V_{4} $-cluster compounds of $ GaV_{4} %$ S_{8} $ and its derivatives $ Ga_{0.90} $ $ Cu_{0.10} %$ V_{4} %$ S_{8} $ and $ Ga_{0.90} %$ Cu_{0.20} %$ V_{4} %$ S_{8} $ have been prepared at 800°C by solid-state reaction method. Although the cubic–rhombohedral phase transformation at 45 K was found to be absent in the derivatives of $ GaV_{4} %$ S_{8} $, low-temperature hopping conduction occurred in all the materials. In the present context, we explain the conduction mechanism for all the materials using polaron theory. The polaron size was found to be large above 260 K but small below 260 K in $ GaV_{4} %$ S_{8} $, as confirmed by the Seebeck coefficient. From the activation energies and polaron size, the anomaly at 260 K is interpreted as associated with crossover from thermally activated to nearest-neighbor hopping upon cooling.
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912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
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912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
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912			\|a GBV_ILN_2113
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912			\|a GBV_ILN_2118
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Indexfelder

author_variant	i n in
matchkey_str	article:1543186X:2017----::oaoiefcoeetiacnutvtadhrolcr
hierarchy_sort_str	2017
publishDate	2017
allfields	10.1007/s11664-017-5858-1 doi (DE-627)SPR021544158 (SPR)s11664-017-5858-1-e DE-627 ger DE-627 rakwb eng Naik, I. verfasserin aut Polaronic Effect on Electrical Conductivity and Thermoelectric Power in Ga(Cu)$ V_{4} %$ S_{8} $ 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2017 Abstract Polycrystalline $ V_{4} $-cluster compounds of $ GaV_{4} %$ S_{8} $ and its derivatives $ Ga_{0.90} $ $ Cu_{0.10} %$ V_{4} %$ S_{8} $ and $ Ga_{0.90} %$ Cu_{0.20} %$ V_{4} %$ S_{8} $ have been prepared at 800°C by solid-state reaction method. Although the cubic–rhombohedral phase transformation at 45 K was found to be absent in the derivatives of $ GaV_{4} %$ S_{8} $, low-temperature hopping conduction occurred in all the materials. In the present context, we explain the conduction mechanism for all the materials using polaron theory. The polaron size was found to be large above 260 K but small below 260 K in $ GaV_{4} %$ S_{8} $, as confirmed by the Seebeck coefficient. From the activation energies and polaron size, the anomaly at 260 K is interpreted as associated with crossover from thermally activated to nearest-neighbor hopping upon cooling. Transition-metal compounds (dpeaa)DE-He213 hopping conduction (dpeaa)DE-He213 polaron theory (dpeaa)DE-He213 Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 47(2017), 1 vom: 19. Okt., Seite 760-765 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:47 year:2017 number:1 day:19 month:10 pages:760-765 https://dx.doi.org/10.1007/s11664-017-5858-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 47 2017 1 19 10 760-765
spelling	10.1007/s11664-017-5858-1 doi (DE-627)SPR021544158 (SPR)s11664-017-5858-1-e DE-627 ger DE-627 rakwb eng Naik, I. verfasserin aut Polaronic Effect on Electrical Conductivity and Thermoelectric Power in Ga(Cu)$ V_{4} %$ S_{8} $ 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2017 Abstract Polycrystalline $ V_{4} $-cluster compounds of $ GaV_{4} %$ S_{8} $ and its derivatives $ Ga_{0.90} $ $ Cu_{0.10} %$ V_{4} %$ S_{8} $ and $ Ga_{0.90} %$ Cu_{0.20} %$ V_{4} %$ S_{8} $ have been prepared at 800°C by solid-state reaction method. Although the cubic–rhombohedral phase transformation at 45 K was found to be absent in the derivatives of $ GaV_{4} %$ S_{8} $, low-temperature hopping conduction occurred in all the materials. In the present context, we explain the conduction mechanism for all the materials using polaron theory. The polaron size was found to be large above 260 K but small below 260 K in $ GaV_{4} %$ S_{8} $, as confirmed by the Seebeck coefficient. From the activation energies and polaron size, the anomaly at 260 K is interpreted as associated with crossover from thermally activated to nearest-neighbor hopping upon cooling. Transition-metal compounds (dpeaa)DE-He213 hopping conduction (dpeaa)DE-He213 polaron theory (dpeaa)DE-He213 Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 47(2017), 1 vom: 19. Okt., Seite 760-765 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:47 year:2017 number:1 day:19 month:10 pages:760-765 https://dx.doi.org/10.1007/s11664-017-5858-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 47 2017 1 19 10 760-765
allfields_unstemmed	10.1007/s11664-017-5858-1 doi (DE-627)SPR021544158 (SPR)s11664-017-5858-1-e DE-627 ger DE-627 rakwb eng Naik, I. verfasserin aut Polaronic Effect on Electrical Conductivity and Thermoelectric Power in Ga(Cu)$ V_{4} %$ S_{8} $ 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2017 Abstract Polycrystalline $ V_{4} $-cluster compounds of $ GaV_{4} %$ S_{8} $ and its derivatives $ Ga_{0.90} $ $ Cu_{0.10} %$ V_{4} %$ S_{8} $ and $ Ga_{0.90} %$ Cu_{0.20} %$ V_{4} %$ S_{8} $ have been prepared at 800°C by solid-state reaction method. Although the cubic–rhombohedral phase transformation at 45 K was found to be absent in the derivatives of $ GaV_{4} %$ S_{8} $, low-temperature hopping conduction occurred in all the materials. In the present context, we explain the conduction mechanism for all the materials using polaron theory. The polaron size was found to be large above 260 K but small below 260 K in $ GaV_{4} %$ S_{8} $, as confirmed by the Seebeck coefficient. From the activation energies and polaron size, the anomaly at 260 K is interpreted as associated with crossover from thermally activated to nearest-neighbor hopping upon cooling. Transition-metal compounds (dpeaa)DE-He213 hopping conduction (dpeaa)DE-He213 polaron theory (dpeaa)DE-He213 Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 47(2017), 1 vom: 19. Okt., Seite 760-765 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:47 year:2017 number:1 day:19 month:10 pages:760-765 https://dx.doi.org/10.1007/s11664-017-5858-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 47 2017 1 19 10 760-765
allfieldsGer	10.1007/s11664-017-5858-1 doi (DE-627)SPR021544158 (SPR)s11664-017-5858-1-e DE-627 ger DE-627 rakwb eng Naik, I. verfasserin aut Polaronic Effect on Electrical Conductivity and Thermoelectric Power in Ga(Cu)$ V_{4} %$ S_{8} $ 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2017 Abstract Polycrystalline $ V_{4} $-cluster compounds of $ GaV_{4} %$ S_{8} $ and its derivatives $ Ga_{0.90} $ $ Cu_{0.10} %$ V_{4} %$ S_{8} $ and $ Ga_{0.90} %$ Cu_{0.20} %$ V_{4} %$ S_{8} $ have been prepared at 800°C by solid-state reaction method. Although the cubic–rhombohedral phase transformation at 45 K was found to be absent in the derivatives of $ GaV_{4} %$ S_{8} $, low-temperature hopping conduction occurred in all the materials. In the present context, we explain the conduction mechanism for all the materials using polaron theory. The polaron size was found to be large above 260 K but small below 260 K in $ GaV_{4} %$ S_{8} $, as confirmed by the Seebeck coefficient. From the activation energies and polaron size, the anomaly at 260 K is interpreted as associated with crossover from thermally activated to nearest-neighbor hopping upon cooling. Transition-metal compounds (dpeaa)DE-He213 hopping conduction (dpeaa)DE-He213 polaron theory (dpeaa)DE-He213 Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 47(2017), 1 vom: 19. Okt., Seite 760-765 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:47 year:2017 number:1 day:19 month:10 pages:760-765 https://dx.doi.org/10.1007/s11664-017-5858-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 47 2017 1 19 10 760-765
allfieldsSound	10.1007/s11664-017-5858-1 doi (DE-627)SPR021544158 (SPR)s11664-017-5858-1-e DE-627 ger DE-627 rakwb eng Naik, I. verfasserin aut Polaronic Effect on Electrical Conductivity and Thermoelectric Power in Ga(Cu)$ V_{4} %$ S_{8} $ 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2017 Abstract Polycrystalline $ V_{4} $-cluster compounds of $ GaV_{4} %$ S_{8} $ and its derivatives $ Ga_{0.90} $ $ Cu_{0.10} %$ V_{4} %$ S_{8} $ and $ Ga_{0.90} %$ Cu_{0.20} %$ V_{4} %$ S_{8} $ have been prepared at 800°C by solid-state reaction method. Although the cubic–rhombohedral phase transformation at 45 K was found to be absent in the derivatives of $ GaV_{4} %$ S_{8} $, low-temperature hopping conduction occurred in all the materials. In the present context, we explain the conduction mechanism for all the materials using polaron theory. The polaron size was found to be large above 260 K but small below 260 K in $ GaV_{4} %$ S_{8} $, as confirmed by the Seebeck coefficient. From the activation energies and polaron size, the anomaly at 260 K is interpreted as associated with crossover from thermally activated to nearest-neighbor hopping upon cooling. Transition-metal compounds (dpeaa)DE-He213 hopping conduction (dpeaa)DE-He213 polaron theory (dpeaa)DE-He213 Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 47(2017), 1 vom: 19. Okt., Seite 760-765 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:47 year:2017 number:1 day:19 month:10 pages:760-765 https://dx.doi.org/10.1007/s11664-017-5858-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 47 2017 1 19 10 760-765
language	English
source	Enthalten in Journal of electronic materials 47(2017), 1 vom: 19. Okt., Seite 760-765 volume:47 year:2017 number:1 day:19 month:10 pages:760-765
sourceStr	Enthalten in Journal of electronic materials 47(2017), 1 vom: 19. Okt., Seite 760-765 volume:47 year:2017 number:1 day:19 month:10 pages:760-765
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Transition-metal compounds hopping conduction polaron theory
isfreeaccess_bool	false
container_title	Journal of electronic materials
authorswithroles_txt_mv	Naik, I. @@aut@@
publishDateDaySort_date	2017-10-19T00:00:00Z
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id	SPR021544158
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author	Naik, I.
spellingShingle	Naik, I. misc Transition-metal compounds misc hopping conduction misc polaron theory Polaronic Effect on Electrical Conductivity and Thermoelectric Power in Ga(Cu)$ V_{4} %$ S_{8} $
authorStr	Naik, I.
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topic_title	Polaronic Effect on Electrical Conductivity and Thermoelectric Power in Ga(Cu)$ V_{4} %$ S_{8} $ Transition-metal compounds (dpeaa)DE-He213 hopping conduction (dpeaa)DE-He213 polaron theory (dpeaa)DE-He213
topic	misc Transition-metal compounds misc hopping conduction misc polaron theory
topic_unstemmed	misc Transition-metal compounds misc hopping conduction misc polaron theory
topic_browse	misc Transition-metal compounds misc hopping conduction misc polaron theory
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Polaronic Effect on Electrical Conductivity and Thermoelectric Power in Ga(Cu)$ V_{4} %$ S_{8} $
ctrlnum	(DE-627)SPR021544158 (SPR)s11664-017-5858-1-e
title_full	Polaronic Effect on Electrical Conductivity and Thermoelectric Power in Ga(Cu)$ V_{4} %$ S_{8} $
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title_sort	polaronic effect on electrical conductivity and thermoelectric power in ga(cu)$ v_{4} %$ s_{8} $
title_auth	Polaronic Effect on Electrical Conductivity and Thermoelectric Power in Ga(Cu)$ V_{4} %$ S_{8} $
abstract	Abstract Polycrystalline $ V_{4} $-cluster compounds of $ GaV_{4} %$ S_{8} $ and its derivatives $ Ga_{0.90} $ $ Cu_{0.10} %$ V_{4} %$ S_{8} $ and $ Ga_{0.90} %$ Cu_{0.20} %$ V_{4} %$ S_{8} $ have been prepared at 800°C by solid-state reaction method. Although the cubic–rhombohedral phase transformation at 45 K was found to be absent in the derivatives of $ GaV_{4} %$ S_{8} $, low-temperature hopping conduction occurred in all the materials. In the present context, we explain the conduction mechanism for all the materials using polaron theory. The polaron size was found to be large above 260 K but small below 260 K in $ GaV_{4} %$ S_{8} $, as confirmed by the Seebeck coefficient. From the activation energies and polaron size, the anomaly at 260 K is interpreted as associated with crossover from thermally activated to nearest-neighbor hopping upon cooling. © The Minerals, Metals & Materials Society 2017
abstractGer	Abstract Polycrystalline $ V_{4} $-cluster compounds of $ GaV_{4} %$ S_{8} $ and its derivatives $ Ga_{0.90} $ $ Cu_{0.10} %$ V_{4} %$ S_{8} $ and $ Ga_{0.90} %$ Cu_{0.20} %$ V_{4} %$ S_{8} $ have been prepared at 800°C by solid-state reaction method. Although the cubic–rhombohedral phase transformation at 45 K was found to be absent in the derivatives of $ GaV_{4} %$ S_{8} $, low-temperature hopping conduction occurred in all the materials. In the present context, we explain the conduction mechanism for all the materials using polaron theory. The polaron size was found to be large above 260 K but small below 260 K in $ GaV_{4} %$ S_{8} $, as confirmed by the Seebeck coefficient. From the activation energies and polaron size, the anomaly at 260 K is interpreted as associated with crossover from thermally activated to nearest-neighbor hopping upon cooling. © The Minerals, Metals & Materials Society 2017
abstract_unstemmed	Abstract Polycrystalline $ V_{4} $-cluster compounds of $ GaV_{4} %$ S_{8} $ and its derivatives $ Ga_{0.90} $ $ Cu_{0.10} %$ V_{4} %$ S_{8} $ and $ Ga_{0.90} %$ Cu_{0.20} %$ V_{4} %$ S_{8} $ have been prepared at 800°C by solid-state reaction method. Although the cubic–rhombohedral phase transformation at 45 K was found to be absent in the derivatives of $ GaV_{4} %$ S_{8} $, low-temperature hopping conduction occurred in all the materials. In the present context, we explain the conduction mechanism for all the materials using polaron theory. The polaron size was found to be large above 260 K but small below 260 K in $ GaV_{4} %$ S_{8} $, as confirmed by the Seebeck coefficient. From the activation energies and polaron size, the anomaly at 260 K is interpreted as associated with crossover from thermally activated to nearest-neighbor hopping upon cooling. © The Minerals, Metals & Materials Society 2017
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title_short	Polaronic Effect on Electrical Conductivity and Thermoelectric Power in Ga(Cu)$ V_{4} %$ S_{8} $
url	https://dx.doi.org/10.1007/s11664-017-5858-1
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up_date	2024-07-03T23:12:48.140Z
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Although the cubic–rhombohedral phase transformation at 45 K was found to be absent in the derivatives of $ GaV_{4} %$ S_{8} $, low-temperature hopping conduction occurred in all the materials. In the present context, we explain the conduction mechanism for all the materials using polaron theory. The polaron size was found to be large above 260 K but small below 260 K in $ GaV_{4} %$ S_{8} $, as confirmed by the Seebeck coefficient. 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Polaronic Effect on Electrical Conductivity and Thermoelectric Power in Ga(Cu)$ V_{4} %$ S_{8} $

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