Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth

Abstract We have studied state-of-the-art CdZnTe (211)B and (111)B substrates and compared them to each other and to substrates from an alternative vendor. The CdZnTe surface has been characterized both as-received and after growth preparation procedures using dark field optical microscopy, scanning...
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Autor*in:	Haakenaasen, R. [verfasserIn] Lauten, O. Selvig, E. Kongshaug, K. O. Røer, E. J. Hansen, R. W.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Schlagwörter:	CdZnTe substrate HgCdTe Te precipitates defects polishing impurity contamination

Anmerkung:	© The Minerals, Metals & Materials Society 2019

Übergeordnetes Werk:	Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 48(2019), 10 vom: 13. Juni, Seite 6124-6137
Übergeordnetes Werk:	volume:48 ; year:2019 ; number:10 ; day:13 ; month:06 ; pages:6124-6137

Links:	Volltext

DOI / URN:	10.1007/s11664-019-07349-6

Katalog-ID:	SPR021554412

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520			\|a Abstract We have studied state-of-the-art CdZnTe (211)B and (111)B substrates and compared them to each other and to substrates from an alternative vendor. The CdZnTe surface has been characterized both as-received and after growth preparation procedures using dark field optical microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, Fourier transform infrared transmission spectroscopy, and secondary ion mass spectroscopy. From these measurements we have obtained densities of particles and morphological defects with size > 0.5 μm, densities of small particles/features with size ≤ 100 nm, and substrate/film interface impurities. The state-of-the-art substrates all have remains of silica grit polishing particles around the edges. The as-received (111)B substrates had very few particles or morphological defects on the surface, but a Br:methanol surface preparation etch exposed a large number of features with sizes ≤ 100 nm. Some of these were silica grit particles, but most of them were Te precipitates. The (111)B substrate from an alternative vendor had a lot of different particles, stains, and voids. It improved significantly after a fine-polishing procedure, but still had the surface with most defects after surface preparation. The state-of-the-art (211)B had the largest as-received density of small features, but after Br:methanol etching this density (of Te precipitates and silica grit particles) was the same as for the etched (111)B substrate. SIMS measurements showed that some of the polishing grit particles ended up on the top surface after surface preparation. Hydrofluoric acid can be used to etch away the silica particles.
650		4	\|a CdZnTe substrate \|7 (dpeaa)DE-He213
650		4	\|a HgCdTe \|7 (dpeaa)DE-He213
650		4	\|a Te precipitates \|7 (dpeaa)DE-He213
650		4	\|a defects \|7 (dpeaa)DE-He213
650		4	\|a polishing \|7 (dpeaa)DE-He213
650		4	\|a impurity contamination \|7 (dpeaa)DE-He213
700	1		\|a Lauten, O. \|4 aut
700	1		\|a Selvig, E. \|4 aut
700	1		\|a Kongshaug, K. O. \|4 aut
700	1		\|a Røer, E. J. \|4 aut
700	1		\|a Hansen, R. W. \|4 aut
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773	1	8	\|g volume:48 \|g year:2019 \|g number:10 \|g day:13 \|g month:06 \|g pages:6124-6137
856	4	0	\|u https://dx.doi.org/10.1007/s11664-019-07349-6 \|z lizenzpflichtig \|3 Volltext
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Indexfelder

author_variant	r h rh o l ol e s es k o k ko kok e j r ej ejr r w h rw rwh
matchkey_str	article:1543186X:2019----::hrceiainf1bn21cztsbtae
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publishDate	2019
allfields	10.1007/s11664-019-07349-6 doi (DE-627)SPR021554412 (SPR)s11664-019-07349-6-e DE-627 ger DE-627 rakwb eng Haakenaasen, R. verfasserin (orcid)0000-0003-0973-2913 aut Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2019 Abstract We have studied state-of-the-art CdZnTe (211)B and (111)B substrates and compared them to each other and to substrates from an alternative vendor. The CdZnTe surface has been characterized both as-received and after growth preparation procedures using dark field optical microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, Fourier transform infrared transmission spectroscopy, and secondary ion mass spectroscopy. From these measurements we have obtained densities of particles and morphological defects with size > 0.5 μm, densities of small particles/features with size ≤ 100 nm, and substrate/film interface impurities. The state-of-the-art substrates all have remains of silica grit polishing particles around the edges. The as-received (111)B substrates had very few particles or morphological defects on the surface, but a Br:methanol surface preparation etch exposed a large number of features with sizes ≤ 100 nm. Some of these were silica grit particles, but most of them were Te precipitates. The (111)B substrate from an alternative vendor had a lot of different particles, stains, and voids. It improved significantly after a fine-polishing procedure, but still had the surface with most defects after surface preparation. The state-of-the-art (211)B had the largest as-received density of small features, but after Br:methanol etching this density (of Te precipitates and silica grit particles) was the same as for the etched (111)B substrate. SIMS measurements showed that some of the polishing grit particles ended up on the top surface after surface preparation. Hydrofluoric acid can be used to etch away the silica particles. CdZnTe substrate (dpeaa)DE-He213 HgCdTe (dpeaa)DE-He213 Te precipitates (dpeaa)DE-He213 defects (dpeaa)DE-He213 polishing (dpeaa)DE-He213 impurity contamination (dpeaa)DE-He213 Lauten, O. aut Selvig, E. aut Kongshaug, K. O. aut Røer, E. J. aut Hansen, R. W. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 48(2019), 10 vom: 13. Juni, Seite 6124-6137 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:48 year:2019 number:10 day:13 month:06 pages:6124-6137 https://dx.doi.org/10.1007/s11664-019-07349-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 48 2019 10 13 06 6124-6137
spelling	10.1007/s11664-019-07349-6 doi (DE-627)SPR021554412 (SPR)s11664-019-07349-6-e DE-627 ger DE-627 rakwb eng Haakenaasen, R. verfasserin (orcid)0000-0003-0973-2913 aut Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2019 Abstract We have studied state-of-the-art CdZnTe (211)B and (111)B substrates and compared them to each other and to substrates from an alternative vendor. The CdZnTe surface has been characterized both as-received and after growth preparation procedures using dark field optical microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, Fourier transform infrared transmission spectroscopy, and secondary ion mass spectroscopy. From these measurements we have obtained densities of particles and morphological defects with size > 0.5 μm, densities of small particles/features with size ≤ 100 nm, and substrate/film interface impurities. The state-of-the-art substrates all have remains of silica grit polishing particles around the edges. The as-received (111)B substrates had very few particles or morphological defects on the surface, but a Br:methanol surface preparation etch exposed a large number of features with sizes ≤ 100 nm. Some of these were silica grit particles, but most of them were Te precipitates. The (111)B substrate from an alternative vendor had a lot of different particles, stains, and voids. It improved significantly after a fine-polishing procedure, but still had the surface with most defects after surface preparation. The state-of-the-art (211)B had the largest as-received density of small features, but after Br:methanol etching this density (of Te precipitates and silica grit particles) was the same as for the etched (111)B substrate. SIMS measurements showed that some of the polishing grit particles ended up on the top surface after surface preparation. Hydrofluoric acid can be used to etch away the silica particles. CdZnTe substrate (dpeaa)DE-He213 HgCdTe (dpeaa)DE-He213 Te precipitates (dpeaa)DE-He213 defects (dpeaa)DE-He213 polishing (dpeaa)DE-He213 impurity contamination (dpeaa)DE-He213 Lauten, O. aut Selvig, E. aut Kongshaug, K. O. aut Røer, E. J. aut Hansen, R. W. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 48(2019), 10 vom: 13. Juni, Seite 6124-6137 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:48 year:2019 number:10 day:13 month:06 pages:6124-6137 https://dx.doi.org/10.1007/s11664-019-07349-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 48 2019 10 13 06 6124-6137
allfields_unstemmed	10.1007/s11664-019-07349-6 doi (DE-627)SPR021554412 (SPR)s11664-019-07349-6-e DE-627 ger DE-627 rakwb eng Haakenaasen, R. verfasserin (orcid)0000-0003-0973-2913 aut Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2019 Abstract We have studied state-of-the-art CdZnTe (211)B and (111)B substrates and compared them to each other and to substrates from an alternative vendor. The CdZnTe surface has been characterized both as-received and after growth preparation procedures using dark field optical microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, Fourier transform infrared transmission spectroscopy, and secondary ion mass spectroscopy. From these measurements we have obtained densities of particles and morphological defects with size > 0.5 μm, densities of small particles/features with size ≤ 100 nm, and substrate/film interface impurities. The state-of-the-art substrates all have remains of silica grit polishing particles around the edges. The as-received (111)B substrates had very few particles or morphological defects on the surface, but a Br:methanol surface preparation etch exposed a large number of features with sizes ≤ 100 nm. Some of these were silica grit particles, but most of them were Te precipitates. The (111)B substrate from an alternative vendor had a lot of different particles, stains, and voids. It improved significantly after a fine-polishing procedure, but still had the surface with most defects after surface preparation. The state-of-the-art (211)B had the largest as-received density of small features, but after Br:methanol etching this density (of Te precipitates and silica grit particles) was the same as for the etched (111)B substrate. SIMS measurements showed that some of the polishing grit particles ended up on the top surface after surface preparation. Hydrofluoric acid can be used to etch away the silica particles. CdZnTe substrate (dpeaa)DE-He213 HgCdTe (dpeaa)DE-He213 Te precipitates (dpeaa)DE-He213 defects (dpeaa)DE-He213 polishing (dpeaa)DE-He213 impurity contamination (dpeaa)DE-He213 Lauten, O. aut Selvig, E. aut Kongshaug, K. O. aut Røer, E. J. aut Hansen, R. W. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 48(2019), 10 vom: 13. Juni, Seite 6124-6137 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:48 year:2019 number:10 day:13 month:06 pages:6124-6137 https://dx.doi.org/10.1007/s11664-019-07349-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 48 2019 10 13 06 6124-6137
allfieldsGer	10.1007/s11664-019-07349-6 doi (DE-627)SPR021554412 (SPR)s11664-019-07349-6-e DE-627 ger DE-627 rakwb eng Haakenaasen, R. verfasserin (orcid)0000-0003-0973-2913 aut Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2019 Abstract We have studied state-of-the-art CdZnTe (211)B and (111)B substrates and compared them to each other and to substrates from an alternative vendor. The CdZnTe surface has been characterized both as-received and after growth preparation procedures using dark field optical microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, Fourier transform infrared transmission spectroscopy, and secondary ion mass spectroscopy. From these measurements we have obtained densities of particles and morphological defects with size > 0.5 μm, densities of small particles/features with size ≤ 100 nm, and substrate/film interface impurities. The state-of-the-art substrates all have remains of silica grit polishing particles around the edges. The as-received (111)B substrates had very few particles or morphological defects on the surface, but a Br:methanol surface preparation etch exposed a large number of features with sizes ≤ 100 nm. Some of these were silica grit particles, but most of them were Te precipitates. The (111)B substrate from an alternative vendor had a lot of different particles, stains, and voids. It improved significantly after a fine-polishing procedure, but still had the surface with most defects after surface preparation. The state-of-the-art (211)B had the largest as-received density of small features, but after Br:methanol etching this density (of Te precipitates and silica grit particles) was the same as for the etched (111)B substrate. SIMS measurements showed that some of the polishing grit particles ended up on the top surface after surface preparation. Hydrofluoric acid can be used to etch away the silica particles. CdZnTe substrate (dpeaa)DE-He213 HgCdTe (dpeaa)DE-He213 Te precipitates (dpeaa)DE-He213 defects (dpeaa)DE-He213 polishing (dpeaa)DE-He213 impurity contamination (dpeaa)DE-He213 Lauten, O. aut Selvig, E. aut Kongshaug, K. O. aut Røer, E. J. aut Hansen, R. W. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 48(2019), 10 vom: 13. Juni, Seite 6124-6137 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:48 year:2019 number:10 day:13 month:06 pages:6124-6137 https://dx.doi.org/10.1007/s11664-019-07349-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 48 2019 10 13 06 6124-6137
allfieldsSound	10.1007/s11664-019-07349-6 doi (DE-627)SPR021554412 (SPR)s11664-019-07349-6-e DE-627 ger DE-627 rakwb eng Haakenaasen, R. verfasserin (orcid)0000-0003-0973-2913 aut Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2019 Abstract We have studied state-of-the-art CdZnTe (211)B and (111)B substrates and compared them to each other and to substrates from an alternative vendor. The CdZnTe surface has been characterized both as-received and after growth preparation procedures using dark field optical microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, Fourier transform infrared transmission spectroscopy, and secondary ion mass spectroscopy. From these measurements we have obtained densities of particles and morphological defects with size > 0.5 μm, densities of small particles/features with size ≤ 100 nm, and substrate/film interface impurities. The state-of-the-art substrates all have remains of silica grit polishing particles around the edges. The as-received (111)B substrates had very few particles or morphological defects on the surface, but a Br:methanol surface preparation etch exposed a large number of features with sizes ≤ 100 nm. Some of these were silica grit particles, but most of them were Te precipitates. The (111)B substrate from an alternative vendor had a lot of different particles, stains, and voids. It improved significantly after a fine-polishing procedure, but still had the surface with most defects after surface preparation. The state-of-the-art (211)B had the largest as-received density of small features, but after Br:methanol etching this density (of Te precipitates and silica grit particles) was the same as for the etched (111)B substrate. SIMS measurements showed that some of the polishing grit particles ended up on the top surface after surface preparation. Hydrofluoric acid can be used to etch away the silica particles. CdZnTe substrate (dpeaa)DE-He213 HgCdTe (dpeaa)DE-He213 Te precipitates (dpeaa)DE-He213 defects (dpeaa)DE-He213 polishing (dpeaa)DE-He213 impurity contamination (dpeaa)DE-He213 Lauten, O. aut Selvig, E. aut Kongshaug, K. O. aut Røer, E. J. aut Hansen, R. W. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 48(2019), 10 vom: 13. Juni, Seite 6124-6137 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:48 year:2019 number:10 day:13 month:06 pages:6124-6137 https://dx.doi.org/10.1007/s11664-019-07349-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 48 2019 10 13 06 6124-6137
language	English
source	Enthalten in Journal of electronic materials 48(2019), 10 vom: 13. Juni, Seite 6124-6137 volume:48 year:2019 number:10 day:13 month:06 pages:6124-6137
sourceStr	Enthalten in Journal of electronic materials 48(2019), 10 vom: 13. Juni, Seite 6124-6137 volume:48 year:2019 number:10 day:13 month:06 pages:6124-6137
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	CdZnTe substrate HgCdTe Te precipitates defects polishing impurity contamination
isfreeaccess_bool	false
container_title	Journal of electronic materials
authorswithroles_txt_mv	Haakenaasen, R. @@aut@@ Lauten, O. @@aut@@ Selvig, E. @@aut@@ Kongshaug, K. O. @@aut@@ Røer, E. J. @@aut@@ Hansen, R. W. @@aut@@
publishDateDaySort_date	2019-06-13T00:00:00Z
hierarchy_top_id	324918739
id	SPR021554412
language_de	englisch
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author	Haakenaasen, R.
spellingShingle	Haakenaasen, R. misc CdZnTe substrate misc HgCdTe misc Te precipitates misc defects misc polishing misc impurity contamination Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth
authorStr	Haakenaasen, R.
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topic_title	Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth CdZnTe substrate (dpeaa)DE-He213 HgCdTe (dpeaa)DE-He213 Te precipitates (dpeaa)DE-He213 defects (dpeaa)DE-He213 polishing (dpeaa)DE-He213 impurity contamination (dpeaa)DE-He213
topic	misc CdZnTe substrate misc HgCdTe misc Te precipitates misc defects misc polishing misc impurity contamination
topic_unstemmed	misc CdZnTe substrate misc HgCdTe misc Te precipitates misc defects misc polishing misc impurity contamination
topic_browse	misc CdZnTe substrate misc HgCdTe misc Te precipitates misc defects misc polishing misc impurity contamination
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth
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title_full	Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth
author_sort	Haakenaasen, R.
journal	Journal of electronic materials
journalStr	Journal of electronic materials
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container_start_page	6124
author_browse	Haakenaasen, R. Lauten, O. Selvig, E. Kongshaug, K. O. Røer, E. J. Hansen, R. W.
container_volume	48
format_se	Elektronische Aufsätze
author-letter	Haakenaasen, R.
doi_str_mv	10.1007/s11664-019-07349-6
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title_sort	characterization of (111)b and (211)b cdznte substrates for hgcdte growth
title_auth	Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth
abstract	Abstract We have studied state-of-the-art CdZnTe (211)B and (111)B substrates and compared them to each other and to substrates from an alternative vendor. The CdZnTe surface has been characterized both as-received and after growth preparation procedures using dark field optical microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, Fourier transform infrared transmission spectroscopy, and secondary ion mass spectroscopy. From these measurements we have obtained densities of particles and morphological defects with size > 0.5 μm, densities of small particles/features with size ≤ 100 nm, and substrate/film interface impurities. The state-of-the-art substrates all have remains of silica grit polishing particles around the edges. The as-received (111)B substrates had very few particles or morphological defects on the surface, but a Br:methanol surface preparation etch exposed a large number of features with sizes ≤ 100 nm. Some of these were silica grit particles, but most of them were Te precipitates. The (111)B substrate from an alternative vendor had a lot of different particles, stains, and voids. It improved significantly after a fine-polishing procedure, but still had the surface with most defects after surface preparation. The state-of-the-art (211)B had the largest as-received density of small features, but after Br:methanol etching this density (of Te precipitates and silica grit particles) was the same as for the etched (111)B substrate. SIMS measurements showed that some of the polishing grit particles ended up on the top surface after surface preparation. Hydrofluoric acid can be used to etch away the silica particles. © The Minerals, Metals & Materials Society 2019
abstractGer	Abstract We have studied state-of-the-art CdZnTe (211)B and (111)B substrates and compared them to each other and to substrates from an alternative vendor. The CdZnTe surface has been characterized both as-received and after growth preparation procedures using dark field optical microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, Fourier transform infrared transmission spectroscopy, and secondary ion mass spectroscopy. From these measurements we have obtained densities of particles and morphological defects with size > 0.5 μm, densities of small particles/features with size ≤ 100 nm, and substrate/film interface impurities. The state-of-the-art substrates all have remains of silica grit polishing particles around the edges. The as-received (111)B substrates had very few particles or morphological defects on the surface, but a Br:methanol surface preparation etch exposed a large number of features with sizes ≤ 100 nm. Some of these were silica grit particles, but most of them were Te precipitates. The (111)B substrate from an alternative vendor had a lot of different particles, stains, and voids. It improved significantly after a fine-polishing procedure, but still had the surface with most defects after surface preparation. The state-of-the-art (211)B had the largest as-received density of small features, but after Br:methanol etching this density (of Te precipitates and silica grit particles) was the same as for the etched (111)B substrate. SIMS measurements showed that some of the polishing grit particles ended up on the top surface after surface preparation. Hydrofluoric acid can be used to etch away the silica particles. © The Minerals, Metals & Materials Society 2019
abstract_unstemmed	Abstract We have studied state-of-the-art CdZnTe (211)B and (111)B substrates and compared them to each other and to substrates from an alternative vendor. The CdZnTe surface has been characterized both as-received and after growth preparation procedures using dark field optical microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, Fourier transform infrared transmission spectroscopy, and secondary ion mass spectroscopy. From these measurements we have obtained densities of particles and morphological defects with size > 0.5 μm, densities of small particles/features with size ≤ 100 nm, and substrate/film interface impurities. The state-of-the-art substrates all have remains of silica grit polishing particles around the edges. The as-received (111)B substrates had very few particles or morphological defects on the surface, but a Br:methanol surface preparation etch exposed a large number of features with sizes ≤ 100 nm. Some of these were silica grit particles, but most of them were Te precipitates. The (111)B substrate from an alternative vendor had a lot of different particles, stains, and voids. It improved significantly after a fine-polishing procedure, but still had the surface with most defects after surface preparation. The state-of-the-art (211)B had the largest as-received density of small features, but after Br:methanol etching this density (of Te precipitates and silica grit particles) was the same as for the etched (111)B substrate. SIMS measurements showed that some of the polishing grit particles ended up on the top surface after surface preparation. Hydrofluoric acid can be used to etch away the silica particles. © The Minerals, Metals & Materials Society 2019
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container_issue	10
title_short	Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth
url	https://dx.doi.org/10.1007/s11664-019-07349-6
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author2	Lauten, O. Selvig, E. Kongshaug, K. O. Røer, E. J. Hansen, R. W.
author2Str	Lauten, O. Selvig, E. Kongshaug, K. O. Røer, E. J. Hansen, R. W.
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doi_str	10.1007/s11664-019-07349-6
up_date	2024-07-03T23:16:32.826Z
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Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth

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