Thermoelectric Properties of Nb-Doped $ SrTiO_{3} $/$ TiO_{2} $ Eutectic Solids Fabricated by Unidirectional Solidification
Abstract Undoped and Nb-doped $ SrTiO_{3} $/$ TiO_{2} $ (STO/TO) eutectic solids were fabricated from the melt at a eutectic point of STO and TO by unidirectional solidification. Fabricated undoped and Nb:STO/TO eutectic solids were composed of the $ TiO_{2} $ rod-like and the $ SrTiO_{3} $ matrix p...
Ausführliche Beschreibung
Autor*in: |
Yokota, Yuui [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2018 |
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Schlagwörter: |
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Anmerkung: |
© The Minerals, Metals & Materials Society 2018 |
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Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 48(2018), 4 vom: 18. Dez., Seite 1827-1832 |
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Übergeordnetes Werk: |
volume:48 ; year:2018 ; number:4 ; day:18 ; month:12 ; pages:1827-1832 |
Links: |
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DOI / URN: |
10.1007/s11664-018-06880-2 |
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Katalog-ID: |
SPR021558744 |
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520 | |a Abstract Undoped and Nb-doped $ SrTiO_{3} $/$ TiO_{2} $ (STO/TO) eutectic solids were fabricated from the melt at a eutectic point of STO and TO by unidirectional solidification. Fabricated undoped and Nb:STO/TO eutectic solids were composed of the $ TiO_{2} $ rod-like and the $ SrTiO_{3} $ matrix phases, and the periodic and uniform eutectic morphology could be achieved in the Nb:STO/TO eutectic solids by stable control of the liquid–solid interface during the fabrication. The thermal conductivity of the Nb:STO/TO eutectic solid was less than half of that of the Nb:STO single crystal owing to the decrease of the lattice thermal conductivity by phonon scattering at the grain boundaries. The figures of merit ZT’s of the Nb:STO/TO eutectic solid, parallel and perpendicular to the growth direction, were ∼ 0.007 and ∼ 0.0004, respectively. The small ZT’s are attributable to the higher electrical resistivity originating from the insufficient carrier doping and high electrical resistivity of the TO phase. | ||
650 | 4 | |a Thermoelectric material |7 (dpeaa)DE-He213 | |
650 | 4 | |a eutectic material |7 (dpeaa)DE-He213 | |
650 | 4 | |a SrTiO |7 (dpeaa)DE-He213 | |
650 | 4 | |a TiO |7 (dpeaa)DE-He213 | |
650 | 4 | |a unidirectional solidification |7 (dpeaa)DE-He213 | |
700 | 1 | |a Horii, Shigeru |4 aut | |
700 | 1 | |a Ogino, Hiraku |4 aut | |
700 | 1 | |a Yoshino, Masao |4 aut | |
700 | 1 | |a Yamaji, Akihiro |4 aut | |
700 | 1 | |a Ohashi, Yuji |4 aut | |
700 | 1 | |a Kurosawa, Shunsuke |4 aut | |
700 | 1 | |a Kamada, Kei |4 aut | |
700 | 1 | |a Yoshikawa, Akira |4 aut | |
773 | 0 | 8 | |i Enthalten in |t Journal of electronic materials |d Warrendale, Pa : TMS, 1972 |g 48(2018), 4 vom: 18. Dez., Seite 1827-1832 |w (DE-627)324918739 |w (DE-600)2032868-0 |x 1543-186X |7 nnns |
773 | 1 | 8 | |g volume:48 |g year:2018 |g number:4 |g day:18 |g month:12 |g pages:1827-1832 |
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10.1007/s11664-018-06880-2 doi (DE-627)SPR021558744 (SPR)s11664-018-06880-2-e DE-627 ger DE-627 rakwb eng Yokota, Yuui verfasserin (orcid)0000-0002-6556-9914 aut Thermoelectric Properties of Nb-Doped $ SrTiO_{3} $/$ TiO_{2} $ Eutectic Solids Fabricated by Unidirectional Solidification 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2018 Abstract Undoped and Nb-doped $ SrTiO_{3} $/$ TiO_{2} $ (STO/TO) eutectic solids were fabricated from the melt at a eutectic point of STO and TO by unidirectional solidification. Fabricated undoped and Nb:STO/TO eutectic solids were composed of the $ TiO_{2} $ rod-like and the $ SrTiO_{3} $ matrix phases, and the periodic and uniform eutectic morphology could be achieved in the Nb:STO/TO eutectic solids by stable control of the liquid–solid interface during the fabrication. The thermal conductivity of the Nb:STO/TO eutectic solid was less than half of that of the Nb:STO single crystal owing to the decrease of the lattice thermal conductivity by phonon scattering at the grain boundaries. The figures of merit ZT’s of the Nb:STO/TO eutectic solid, parallel and perpendicular to the growth direction, were ∼ 0.007 and ∼ 0.0004, respectively. The small ZT’s are attributable to the higher electrical resistivity originating from the insufficient carrier doping and high electrical resistivity of the TO phase. Thermoelectric material (dpeaa)DE-He213 eutectic material (dpeaa)DE-He213 SrTiO (dpeaa)DE-He213 TiO (dpeaa)DE-He213 unidirectional solidification (dpeaa)DE-He213 Horii, Shigeru aut Ogino, Hiraku aut Yoshino, Masao aut Yamaji, Akihiro aut Ohashi, Yuji aut Kurosawa, Shunsuke aut Kamada, Kei aut Yoshikawa, Akira aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 48(2018), 4 vom: 18. Dez., Seite 1827-1832 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:48 year:2018 number:4 day:18 month:12 pages:1827-1832 https://dx.doi.org/10.1007/s11664-018-06880-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 48 2018 4 18 12 1827-1832 |
spelling |
10.1007/s11664-018-06880-2 doi (DE-627)SPR021558744 (SPR)s11664-018-06880-2-e DE-627 ger DE-627 rakwb eng Yokota, Yuui verfasserin (orcid)0000-0002-6556-9914 aut Thermoelectric Properties of Nb-Doped $ SrTiO_{3} $/$ TiO_{2} $ Eutectic Solids Fabricated by Unidirectional Solidification 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2018 Abstract Undoped and Nb-doped $ SrTiO_{3} $/$ TiO_{2} $ (STO/TO) eutectic solids were fabricated from the melt at a eutectic point of STO and TO by unidirectional solidification. Fabricated undoped and Nb:STO/TO eutectic solids were composed of the $ TiO_{2} $ rod-like and the $ SrTiO_{3} $ matrix phases, and the periodic and uniform eutectic morphology could be achieved in the Nb:STO/TO eutectic solids by stable control of the liquid–solid interface during the fabrication. The thermal conductivity of the Nb:STO/TO eutectic solid was less than half of that of the Nb:STO single crystal owing to the decrease of the lattice thermal conductivity by phonon scattering at the grain boundaries. The figures of merit ZT’s of the Nb:STO/TO eutectic solid, parallel and perpendicular to the growth direction, were ∼ 0.007 and ∼ 0.0004, respectively. The small ZT’s are attributable to the higher electrical resistivity originating from the insufficient carrier doping and high electrical resistivity of the TO phase. Thermoelectric material (dpeaa)DE-He213 eutectic material (dpeaa)DE-He213 SrTiO (dpeaa)DE-He213 TiO (dpeaa)DE-He213 unidirectional solidification (dpeaa)DE-He213 Horii, Shigeru aut Ogino, Hiraku aut Yoshino, Masao aut Yamaji, Akihiro aut Ohashi, Yuji aut Kurosawa, Shunsuke aut Kamada, Kei aut Yoshikawa, Akira aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 48(2018), 4 vom: 18. Dez., Seite 1827-1832 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:48 year:2018 number:4 day:18 month:12 pages:1827-1832 https://dx.doi.org/10.1007/s11664-018-06880-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 48 2018 4 18 12 1827-1832 |
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10.1007/s11664-018-06880-2 doi (DE-627)SPR021558744 (SPR)s11664-018-06880-2-e DE-627 ger DE-627 rakwb eng Yokota, Yuui verfasserin (orcid)0000-0002-6556-9914 aut Thermoelectric Properties of Nb-Doped $ SrTiO_{3} $/$ TiO_{2} $ Eutectic Solids Fabricated by Unidirectional Solidification 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2018 Abstract Undoped and Nb-doped $ SrTiO_{3} $/$ TiO_{2} $ (STO/TO) eutectic solids were fabricated from the melt at a eutectic point of STO and TO by unidirectional solidification. Fabricated undoped and Nb:STO/TO eutectic solids were composed of the $ TiO_{2} $ rod-like and the $ SrTiO_{3} $ matrix phases, and the periodic and uniform eutectic morphology could be achieved in the Nb:STO/TO eutectic solids by stable control of the liquid–solid interface during the fabrication. The thermal conductivity of the Nb:STO/TO eutectic solid was less than half of that of the Nb:STO single crystal owing to the decrease of the lattice thermal conductivity by phonon scattering at the grain boundaries. The figures of merit ZT’s of the Nb:STO/TO eutectic solid, parallel and perpendicular to the growth direction, were ∼ 0.007 and ∼ 0.0004, respectively. The small ZT’s are attributable to the higher electrical resistivity originating from the insufficient carrier doping and high electrical resistivity of the TO phase. Thermoelectric material (dpeaa)DE-He213 eutectic material (dpeaa)DE-He213 SrTiO (dpeaa)DE-He213 TiO (dpeaa)DE-He213 unidirectional solidification (dpeaa)DE-He213 Horii, Shigeru aut Ogino, Hiraku aut Yoshino, Masao aut Yamaji, Akihiro aut Ohashi, Yuji aut Kurosawa, Shunsuke aut Kamada, Kei aut Yoshikawa, Akira aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 48(2018), 4 vom: 18. Dez., Seite 1827-1832 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:48 year:2018 number:4 day:18 month:12 pages:1827-1832 https://dx.doi.org/10.1007/s11664-018-06880-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 48 2018 4 18 12 1827-1832 |
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10.1007/s11664-018-06880-2 doi (DE-627)SPR021558744 (SPR)s11664-018-06880-2-e DE-627 ger DE-627 rakwb eng Yokota, Yuui verfasserin (orcid)0000-0002-6556-9914 aut Thermoelectric Properties of Nb-Doped $ SrTiO_{3} $/$ TiO_{2} $ Eutectic Solids Fabricated by Unidirectional Solidification 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2018 Abstract Undoped and Nb-doped $ SrTiO_{3} $/$ TiO_{2} $ (STO/TO) eutectic solids were fabricated from the melt at a eutectic point of STO and TO by unidirectional solidification. Fabricated undoped and Nb:STO/TO eutectic solids were composed of the $ TiO_{2} $ rod-like and the $ SrTiO_{3} $ matrix phases, and the periodic and uniform eutectic morphology could be achieved in the Nb:STO/TO eutectic solids by stable control of the liquid–solid interface during the fabrication. The thermal conductivity of the Nb:STO/TO eutectic solid was less than half of that of the Nb:STO single crystal owing to the decrease of the lattice thermal conductivity by phonon scattering at the grain boundaries. The figures of merit ZT’s of the Nb:STO/TO eutectic solid, parallel and perpendicular to the growth direction, were ∼ 0.007 and ∼ 0.0004, respectively. The small ZT’s are attributable to the higher electrical resistivity originating from the insufficient carrier doping and high electrical resistivity of the TO phase. Thermoelectric material (dpeaa)DE-He213 eutectic material (dpeaa)DE-He213 SrTiO (dpeaa)DE-He213 TiO (dpeaa)DE-He213 unidirectional solidification (dpeaa)DE-He213 Horii, Shigeru aut Ogino, Hiraku aut Yoshino, Masao aut Yamaji, Akihiro aut Ohashi, Yuji aut Kurosawa, Shunsuke aut Kamada, Kei aut Yoshikawa, Akira aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 48(2018), 4 vom: 18. Dez., Seite 1827-1832 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:48 year:2018 number:4 day:18 month:12 pages:1827-1832 https://dx.doi.org/10.1007/s11664-018-06880-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 48 2018 4 18 12 1827-1832 |
allfieldsSound |
10.1007/s11664-018-06880-2 doi (DE-627)SPR021558744 (SPR)s11664-018-06880-2-e DE-627 ger DE-627 rakwb eng Yokota, Yuui verfasserin (orcid)0000-0002-6556-9914 aut Thermoelectric Properties of Nb-Doped $ SrTiO_{3} $/$ TiO_{2} $ Eutectic Solids Fabricated by Unidirectional Solidification 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2018 Abstract Undoped and Nb-doped $ SrTiO_{3} $/$ TiO_{2} $ (STO/TO) eutectic solids were fabricated from the melt at a eutectic point of STO and TO by unidirectional solidification. Fabricated undoped and Nb:STO/TO eutectic solids were composed of the $ TiO_{2} $ rod-like and the $ SrTiO_{3} $ matrix phases, and the periodic and uniform eutectic morphology could be achieved in the Nb:STO/TO eutectic solids by stable control of the liquid–solid interface during the fabrication. The thermal conductivity of the Nb:STO/TO eutectic solid was less than half of that of the Nb:STO single crystal owing to the decrease of the lattice thermal conductivity by phonon scattering at the grain boundaries. The figures of merit ZT’s of the Nb:STO/TO eutectic solid, parallel and perpendicular to the growth direction, were ∼ 0.007 and ∼ 0.0004, respectively. The small ZT’s are attributable to the higher electrical resistivity originating from the insufficient carrier doping and high electrical resistivity of the TO phase. Thermoelectric material (dpeaa)DE-He213 eutectic material (dpeaa)DE-He213 SrTiO (dpeaa)DE-He213 TiO (dpeaa)DE-He213 unidirectional solidification (dpeaa)DE-He213 Horii, Shigeru aut Ogino, Hiraku aut Yoshino, Masao aut Yamaji, Akihiro aut Ohashi, Yuji aut Kurosawa, Shunsuke aut Kamada, Kei aut Yoshikawa, Akira aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 48(2018), 4 vom: 18. Dez., Seite 1827-1832 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:48 year:2018 number:4 day:18 month:12 pages:1827-1832 https://dx.doi.org/10.1007/s11664-018-06880-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 48 2018 4 18 12 1827-1832 |
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Enthalten in Journal of electronic materials 48(2018), 4 vom: 18. Dez., Seite 1827-1832 volume:48 year:2018 number:4 day:18 month:12 pages:1827-1832 |
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Enthalten in Journal of electronic materials 48(2018), 4 vom: 18. Dez., Seite 1827-1832 volume:48 year:2018 number:4 day:18 month:12 pages:1827-1832 |
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Thermoelectric material eutectic material SrTiO TiO unidirectional solidification |
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Yokota, Yuui @@aut@@ Horii, Shigeru @@aut@@ Ogino, Hiraku @@aut@@ Yoshino, Masao @@aut@@ Yamaji, Akihiro @@aut@@ Ohashi, Yuji @@aut@@ Kurosawa, Shunsuke @@aut@@ Kamada, Kei @@aut@@ Yoshikawa, Akira @@aut@@ |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR021558744</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230331055348.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s2018 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11664-018-06880-2</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR021558744</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s11664-018-06880-2-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Yokota, Yuui</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0002-6556-9914</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Thermoelectric Properties of Nb-Doped $ SrTiO_{3} $/$ TiO_{2} $ Eutectic Solids Fabricated by Unidirectional Solidification</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Minerals, Metals & Materials Society 2018</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Undoped and Nb-doped $ SrTiO_{3} $/$ TiO_{2} $ (STO/TO) eutectic solids were fabricated from the melt at a eutectic point of STO and TO by unidirectional solidification. Fabricated undoped and Nb:STO/TO eutectic solids were composed of the $ TiO_{2} $ rod-like and the $ SrTiO_{3} $ matrix phases, and the periodic and uniform eutectic morphology could be achieved in the Nb:STO/TO eutectic solids by stable control of the liquid–solid interface during the fabrication. The thermal conductivity of the Nb:STO/TO eutectic solid was less than half of that of the Nb:STO single crystal owing to the decrease of the lattice thermal conductivity by phonon scattering at the grain boundaries. The figures of merit ZT’s of the Nb:STO/TO eutectic solid, parallel and perpendicular to the growth direction, were ∼ 0.007 and ∼ 0.0004, respectively. 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author |
Yokota, Yuui |
spellingShingle |
Yokota, Yuui misc Thermoelectric material misc eutectic material misc SrTiO misc TiO misc unidirectional solidification Thermoelectric Properties of Nb-Doped $ SrTiO_{3} $/$ TiO_{2} $ Eutectic Solids Fabricated by Unidirectional Solidification |
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Thermoelectric Properties of Nb-Doped $ SrTiO_{3} $/$ TiO_{2} $ Eutectic Solids Fabricated by Unidirectional Solidification Thermoelectric material (dpeaa)DE-He213 eutectic material (dpeaa)DE-He213 SrTiO (dpeaa)DE-He213 TiO (dpeaa)DE-He213 unidirectional solidification (dpeaa)DE-He213 |
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misc Thermoelectric material misc eutectic material misc SrTiO misc TiO misc unidirectional solidification |
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misc Thermoelectric material misc eutectic material misc SrTiO misc TiO misc unidirectional solidification |
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misc Thermoelectric material misc eutectic material misc SrTiO misc TiO misc unidirectional solidification |
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Thermoelectric Properties of Nb-Doped $ SrTiO_{3} $/$ TiO_{2} $ Eutectic Solids Fabricated by Unidirectional Solidification |
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(DE-627)SPR021558744 (SPR)s11664-018-06880-2-e |
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Thermoelectric Properties of Nb-Doped $ SrTiO_{3} $/$ TiO_{2} $ Eutectic Solids Fabricated by Unidirectional Solidification |
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Yokota, Yuui |
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Yokota, Yuui Horii, Shigeru Ogino, Hiraku Yoshino, Masao Yamaji, Akihiro Ohashi, Yuji Kurosawa, Shunsuke Kamada, Kei Yoshikawa, Akira |
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48 |
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Elektronische Aufsätze |
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Yokota, Yuui |
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thermoelectric properties of nb-doped $ srtio_{3} $/$ tio_{2} $ eutectic solids fabricated by unidirectional solidification |
title_auth |
Thermoelectric Properties of Nb-Doped $ SrTiO_{3} $/$ TiO_{2} $ Eutectic Solids Fabricated by Unidirectional Solidification |
abstract |
Abstract Undoped and Nb-doped $ SrTiO_{3} $/$ TiO_{2} $ (STO/TO) eutectic solids were fabricated from the melt at a eutectic point of STO and TO by unidirectional solidification. Fabricated undoped and Nb:STO/TO eutectic solids were composed of the $ TiO_{2} $ rod-like and the $ SrTiO_{3} $ matrix phases, and the periodic and uniform eutectic morphology could be achieved in the Nb:STO/TO eutectic solids by stable control of the liquid–solid interface during the fabrication. The thermal conductivity of the Nb:STO/TO eutectic solid was less than half of that of the Nb:STO single crystal owing to the decrease of the lattice thermal conductivity by phonon scattering at the grain boundaries. The figures of merit ZT’s of the Nb:STO/TO eutectic solid, parallel and perpendicular to the growth direction, were ∼ 0.007 and ∼ 0.0004, respectively. The small ZT’s are attributable to the higher electrical resistivity originating from the insufficient carrier doping and high electrical resistivity of the TO phase. © The Minerals, Metals & Materials Society 2018 |
abstractGer |
Abstract Undoped and Nb-doped $ SrTiO_{3} $/$ TiO_{2} $ (STO/TO) eutectic solids were fabricated from the melt at a eutectic point of STO and TO by unidirectional solidification. Fabricated undoped and Nb:STO/TO eutectic solids were composed of the $ TiO_{2} $ rod-like and the $ SrTiO_{3} $ matrix phases, and the periodic and uniform eutectic morphology could be achieved in the Nb:STO/TO eutectic solids by stable control of the liquid–solid interface during the fabrication. The thermal conductivity of the Nb:STO/TO eutectic solid was less than half of that of the Nb:STO single crystal owing to the decrease of the lattice thermal conductivity by phonon scattering at the grain boundaries. The figures of merit ZT’s of the Nb:STO/TO eutectic solid, parallel and perpendicular to the growth direction, were ∼ 0.007 and ∼ 0.0004, respectively. The small ZT’s are attributable to the higher electrical resistivity originating from the insufficient carrier doping and high electrical resistivity of the TO phase. © The Minerals, Metals & Materials Society 2018 |
abstract_unstemmed |
Abstract Undoped and Nb-doped $ SrTiO_{3} $/$ TiO_{2} $ (STO/TO) eutectic solids were fabricated from the melt at a eutectic point of STO and TO by unidirectional solidification. Fabricated undoped and Nb:STO/TO eutectic solids were composed of the $ TiO_{2} $ rod-like and the $ SrTiO_{3} $ matrix phases, and the periodic and uniform eutectic morphology could be achieved in the Nb:STO/TO eutectic solids by stable control of the liquid–solid interface during the fabrication. The thermal conductivity of the Nb:STO/TO eutectic solid was less than half of that of the Nb:STO single crystal owing to the decrease of the lattice thermal conductivity by phonon scattering at the grain boundaries. The figures of merit ZT’s of the Nb:STO/TO eutectic solid, parallel and perpendicular to the growth direction, were ∼ 0.007 and ∼ 0.0004, respectively. The small ZT’s are attributable to the higher electrical resistivity originating from the insufficient carrier doping and high electrical resistivity of the TO phase. © The Minerals, Metals & Materials Society 2018 |
collection_details |
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container_issue |
4 |
title_short |
Thermoelectric Properties of Nb-Doped $ SrTiO_{3} $/$ TiO_{2} $ Eutectic Solids Fabricated by Unidirectional Solidification |
url |
https://dx.doi.org/10.1007/s11664-018-06880-2 |
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true |
author2 |
Horii, Shigeru Ogino, Hiraku Yoshino, Masao Yamaji, Akihiro Ohashi, Yuji Kurosawa, Shunsuke Kamada, Kei Yoshikawa, Akira |
author2Str |
Horii, Shigeru Ogino, Hiraku Yoshino, Masao Yamaji, Akihiro Ohashi, Yuji Kurosawa, Shunsuke Kamada, Kei Yoshikawa, Akira |
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324918739 |
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doi_str |
10.1007/s11664-018-06880-2 |
up_date |
2024-07-03T23:18:05.429Z |
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score |
7.3993616 |