Colossal Dielectric Response of PVDF-HFP Amalgamated Ultra-Low-Density Metal-Derived Nanoparticles: Frontier of an Excellent Charge Separator

Abstract As a high-dielectric separator, a wide variety of polymers like poly(vinylidene fluoride) (PVDF) and its co-polymer such as poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) are commonly employed due to having modifiable electrical properties with impregnating suitable dopants in...
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Autor*in:	Mondal, D. [verfasserIn] Gayen, A. L. Paul, B. K. Bhar, D. S. Das, K. Nandy, P. Das, S.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Schlagwörter:	Ultra-low-density triturated metal nanoparticle Doped PVDF-HFP phase Electrical property Separator of a charge storage device

Anmerkung:	© The Minerals, Metals & Materials Society 2019

Übergeordnetes Werk:	Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 48(2019), 9 vom: 08. Juli, Seite 5570-5580
Übergeordnetes Werk:	volume:48 ; year:2019 ; number:9 ; day:08 ; month:07 ; pages:5570-5580

Links:	Volltext

DOI / URN:	10.1007/s11664-019-07401-5

Katalog-ID:	SPR021563853

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520			\|a Abstract As a high-dielectric separator, a wide variety of polymers like poly(vinylidene fluoride) (PVDF) and its co-polymer such as poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) are commonly employed due to having modifiable electrical properties with impregnating suitable dopants in the fabrication of a high-performance charge storage device. In this report, improvement of efficiency has been studied by tuning the doping concentration of triturated material like ultra-low-density copper sulphate (ULDCS) within PVDF-HFP matrix and found a massive increment in β phase (β%), dielectric constant (εr) and ac conductivity (σac) with ∼ 2.3, ∼ 56 and ∼ 21 fold (at 100-Hz frequency), respectively, at a critical percentage of 10-ml doping compared to the pristine polymer matrix. One crucial factor like dielectric leakage has been taken into account intensely with reduction of ∼ 2.6 times at 100-Hz frequency with respect to the pristine one to obtain excellent behaviour of the separator. These extremely desirable properties can make the sample a very promising candidate to be used as a high-dielectric separator of an extraordinary charge storage device. In this context, a super-charge storage device has been fabricated using our synthesized high-dielectric material as a separator, and the device performance is amplified to a greater extent. Generation of high potential up to 3.77 V with high rate of retentivity (∼ 88.86%) is the key function of our device, and the efficiency of the device has also been verified by lighting up to 25 light-emitting diodes (LEDs) for 10 min.
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allfields	10.1007/s11664-019-07401-5 doi (DE-627)SPR021563853 (SPR)s11664-019-07401-5-e DE-627 ger DE-627 rakwb eng Mondal, D. verfasserin aut Colossal Dielectric Response of PVDF-HFP Amalgamated Ultra-Low-Density Metal-Derived Nanoparticles: Frontier of an Excellent Charge Separator 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2019 Abstract As a high-dielectric separator, a wide variety of polymers like poly(vinylidene fluoride) (PVDF) and its co-polymer such as poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) are commonly employed due to having modifiable electrical properties with impregnating suitable dopants in the fabrication of a high-performance charge storage device. In this report, improvement of efficiency has been studied by tuning the doping concentration of triturated material like ultra-low-density copper sulphate (ULDCS) within PVDF-HFP matrix and found a massive increment in β phase (β%), dielectric constant (εr) and ac conductivity (σac) with ∼ 2.3, ∼ 56 and ∼ 21 fold (at 100-Hz frequency), respectively, at a critical percentage of 10-ml doping compared to the pristine polymer matrix. One crucial factor like dielectric leakage has been taken into account intensely with reduction of ∼ 2.6 times at 100-Hz frequency with respect to the pristine one to obtain excellent behaviour of the separator. These extremely desirable properties can make the sample a very promising candidate to be used as a high-dielectric separator of an extraordinary charge storage device. In this context, a super-charge storage device has been fabricated using our synthesized high-dielectric material as a separator, and the device performance is amplified to a greater extent. Generation of high potential up to 3.77 V with high rate of retentivity (∼ 88.86%) is the key function of our device, and the efficiency of the device has also been verified by lighting up to 25 light-emitting diodes (LEDs) for 10 min. Ultra-low-density triturated metal nanoparticle (dpeaa)DE-He213 Doped PVDF-HFP (dpeaa)DE-He213 phase (dpeaa)DE-He213 Electrical property (dpeaa)DE-He213 Separator of a charge storage device (dpeaa)DE-He213 Gayen, A. L. aut Paul, B. K. aut Bhar, D. S. aut Das, K. aut Nandy, P. aut Das, S. (orcid)0000-0001-8372-3076 aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 48(2019), 9 vom: 08. Juli, Seite 5570-5580 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:48 year:2019 number:9 day:08 month:07 pages:5570-5580 https://dx.doi.org/10.1007/s11664-019-07401-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 48 2019 9 08 07 5570-5580
spelling	10.1007/s11664-019-07401-5 doi (DE-627)SPR021563853 (SPR)s11664-019-07401-5-e DE-627 ger DE-627 rakwb eng Mondal, D. verfasserin aut Colossal Dielectric Response of PVDF-HFP Amalgamated Ultra-Low-Density Metal-Derived Nanoparticles: Frontier of an Excellent Charge Separator 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2019 Abstract As a high-dielectric separator, a wide variety of polymers like poly(vinylidene fluoride) (PVDF) and its co-polymer such as poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) are commonly employed due to having modifiable electrical properties with impregnating suitable dopants in the fabrication of a high-performance charge storage device. In this report, improvement of efficiency has been studied by tuning the doping concentration of triturated material like ultra-low-density copper sulphate (ULDCS) within PVDF-HFP matrix and found a massive increment in β phase (β%), dielectric constant (εr) and ac conductivity (σac) with ∼ 2.3, ∼ 56 and ∼ 21 fold (at 100-Hz frequency), respectively, at a critical percentage of 10-ml doping compared to the pristine polymer matrix. One crucial factor like dielectric leakage has been taken into account intensely with reduction of ∼ 2.6 times at 100-Hz frequency with respect to the pristine one to obtain excellent behaviour of the separator. These extremely desirable properties can make the sample a very promising candidate to be used as a high-dielectric separator of an extraordinary charge storage device. In this context, a super-charge storage device has been fabricated using our synthesized high-dielectric material as a separator, and the device performance is amplified to a greater extent. Generation of high potential up to 3.77 V with high rate of retentivity (∼ 88.86%) is the key function of our device, and the efficiency of the device has also been verified by lighting up to 25 light-emitting diodes (LEDs) for 10 min. Ultra-low-density triturated metal nanoparticle (dpeaa)DE-He213 Doped PVDF-HFP (dpeaa)DE-He213 phase (dpeaa)DE-He213 Electrical property (dpeaa)DE-He213 Separator of a charge storage device (dpeaa)DE-He213 Gayen, A. L. aut Paul, B. K. aut Bhar, D. S. aut Das, K. aut Nandy, P. aut Das, S. (orcid)0000-0001-8372-3076 aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 48(2019), 9 vom: 08. Juli, Seite 5570-5580 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:48 year:2019 number:9 day:08 month:07 pages:5570-5580 https://dx.doi.org/10.1007/s11664-019-07401-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 48 2019 9 08 07 5570-5580
allfields_unstemmed	10.1007/s11664-019-07401-5 doi (DE-627)SPR021563853 (SPR)s11664-019-07401-5-e DE-627 ger DE-627 rakwb eng Mondal, D. verfasserin aut Colossal Dielectric Response of PVDF-HFP Amalgamated Ultra-Low-Density Metal-Derived Nanoparticles: Frontier of an Excellent Charge Separator 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2019 Abstract As a high-dielectric separator, a wide variety of polymers like poly(vinylidene fluoride) (PVDF) and its co-polymer such as poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) are commonly employed due to having modifiable electrical properties with impregnating suitable dopants in the fabrication of a high-performance charge storage device. In this report, improvement of efficiency has been studied by tuning the doping concentration of triturated material like ultra-low-density copper sulphate (ULDCS) within PVDF-HFP matrix and found a massive increment in β phase (β%), dielectric constant (εr) and ac conductivity (σac) with ∼ 2.3, ∼ 56 and ∼ 21 fold (at 100-Hz frequency), respectively, at a critical percentage of 10-ml doping compared to the pristine polymer matrix. One crucial factor like dielectric leakage has been taken into account intensely with reduction of ∼ 2.6 times at 100-Hz frequency with respect to the pristine one to obtain excellent behaviour of the separator. These extremely desirable properties can make the sample a very promising candidate to be used as a high-dielectric separator of an extraordinary charge storage device. In this context, a super-charge storage device has been fabricated using our synthesized high-dielectric material as a separator, and the device performance is amplified to a greater extent. Generation of high potential up to 3.77 V with high rate of retentivity (∼ 88.86%) is the key function of our device, and the efficiency of the device has also been verified by lighting up to 25 light-emitting diodes (LEDs) for 10 min. Ultra-low-density triturated metal nanoparticle (dpeaa)DE-He213 Doped PVDF-HFP (dpeaa)DE-He213 phase (dpeaa)DE-He213 Electrical property (dpeaa)DE-He213 Separator of a charge storage device (dpeaa)DE-He213 Gayen, A. L. aut Paul, B. K. aut Bhar, D. S. aut Das, K. aut Nandy, P. aut Das, S. (orcid)0000-0001-8372-3076 aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 48(2019), 9 vom: 08. Juli, Seite 5570-5580 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:48 year:2019 number:9 day:08 month:07 pages:5570-5580 https://dx.doi.org/10.1007/s11664-019-07401-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 48 2019 9 08 07 5570-5580
allfieldsGer	10.1007/s11664-019-07401-5 doi (DE-627)SPR021563853 (SPR)s11664-019-07401-5-e DE-627 ger DE-627 rakwb eng Mondal, D. verfasserin aut Colossal Dielectric Response of PVDF-HFP Amalgamated Ultra-Low-Density Metal-Derived Nanoparticles: Frontier of an Excellent Charge Separator 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2019 Abstract As a high-dielectric separator, a wide variety of polymers like poly(vinylidene fluoride) (PVDF) and its co-polymer such as poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) are commonly employed due to having modifiable electrical properties with impregnating suitable dopants in the fabrication of a high-performance charge storage device. In this report, improvement of efficiency has been studied by tuning the doping concentration of triturated material like ultra-low-density copper sulphate (ULDCS) within PVDF-HFP matrix and found a massive increment in β phase (β%), dielectric constant (εr) and ac conductivity (σac) with ∼ 2.3, ∼ 56 and ∼ 21 fold (at 100-Hz frequency), respectively, at a critical percentage of 10-ml doping compared to the pristine polymer matrix. One crucial factor like dielectric leakage has been taken into account intensely with reduction of ∼ 2.6 times at 100-Hz frequency with respect to the pristine one to obtain excellent behaviour of the separator. These extremely desirable properties can make the sample a very promising candidate to be used as a high-dielectric separator of an extraordinary charge storage device. In this context, a super-charge storage device has been fabricated using our synthesized high-dielectric material as a separator, and the device performance is amplified to a greater extent. Generation of high potential up to 3.77 V with high rate of retentivity (∼ 88.86%) is the key function of our device, and the efficiency of the device has also been verified by lighting up to 25 light-emitting diodes (LEDs) for 10 min. Ultra-low-density triturated metal nanoparticle (dpeaa)DE-He213 Doped PVDF-HFP (dpeaa)DE-He213 phase (dpeaa)DE-He213 Electrical property (dpeaa)DE-He213 Separator of a charge storage device (dpeaa)DE-He213 Gayen, A. L. aut Paul, B. K. aut Bhar, D. S. aut Das, K. aut Nandy, P. aut Das, S. (orcid)0000-0001-8372-3076 aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 48(2019), 9 vom: 08. Juli, Seite 5570-5580 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:48 year:2019 number:9 day:08 month:07 pages:5570-5580 https://dx.doi.org/10.1007/s11664-019-07401-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 48 2019 9 08 07 5570-5580
allfieldsSound	10.1007/s11664-019-07401-5 doi (DE-627)SPR021563853 (SPR)s11664-019-07401-5-e DE-627 ger DE-627 rakwb eng Mondal, D. verfasserin aut Colossal Dielectric Response of PVDF-HFP Amalgamated Ultra-Low-Density Metal-Derived Nanoparticles: Frontier of an Excellent Charge Separator 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2019 Abstract As a high-dielectric separator, a wide variety of polymers like poly(vinylidene fluoride) (PVDF) and its co-polymer such as poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) are commonly employed due to having modifiable electrical properties with impregnating suitable dopants in the fabrication of a high-performance charge storage device. In this report, improvement of efficiency has been studied by tuning the doping concentration of triturated material like ultra-low-density copper sulphate (ULDCS) within PVDF-HFP matrix and found a massive increment in β phase (β%), dielectric constant (εr) and ac conductivity (σac) with ∼ 2.3, ∼ 56 and ∼ 21 fold (at 100-Hz frequency), respectively, at a critical percentage of 10-ml doping compared to the pristine polymer matrix. One crucial factor like dielectric leakage has been taken into account intensely with reduction of ∼ 2.6 times at 100-Hz frequency with respect to the pristine one to obtain excellent behaviour of the separator. These extremely desirable properties can make the sample a very promising candidate to be used as a high-dielectric separator of an extraordinary charge storage device. In this context, a super-charge storage device has been fabricated using our synthesized high-dielectric material as a separator, and the device performance is amplified to a greater extent. Generation of high potential up to 3.77 V with high rate of retentivity (∼ 88.86%) is the key function of our device, and the efficiency of the device has also been verified by lighting up to 25 light-emitting diodes (LEDs) for 10 min. Ultra-low-density triturated metal nanoparticle (dpeaa)DE-He213 Doped PVDF-HFP (dpeaa)DE-He213 phase (dpeaa)DE-He213 Electrical property (dpeaa)DE-He213 Separator of a charge storage device (dpeaa)DE-He213 Gayen, A. L. aut Paul, B. K. aut Bhar, D. S. aut Das, K. aut Nandy, P. aut Das, S. (orcid)0000-0001-8372-3076 aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 48(2019), 9 vom: 08. Juli, Seite 5570-5580 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:48 year:2019 number:9 day:08 month:07 pages:5570-5580 https://dx.doi.org/10.1007/s11664-019-07401-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 48 2019 9 08 07 5570-5580
language	English
source	Enthalten in Journal of electronic materials 48(2019), 9 vom: 08. Juli, Seite 5570-5580 volume:48 year:2019 number:9 day:08 month:07 pages:5570-5580
sourceStr	Enthalten in Journal of electronic materials 48(2019), 9 vom: 08. Juli, Seite 5570-5580 volume:48 year:2019 number:9 day:08 month:07 pages:5570-5580
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Ultra-low-density triturated metal nanoparticle Doped PVDF-HFP phase Electrical property Separator of a charge storage device
isfreeaccess_bool	false
container_title	Journal of electronic materials
authorswithroles_txt_mv	Mondal, D. @@aut@@ Gayen, A. L. @@aut@@ Paul, B. K. @@aut@@ Bhar, D. S. @@aut@@ Das, K. @@aut@@ Nandy, P. @@aut@@ Das, S. @@aut@@
publishDateDaySort_date	2019-07-08T00:00:00Z
hierarchy_top_id	324918739
id	SPR021563853
language_de	englisch
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author	Mondal, D.
spellingShingle	Mondal, D. misc Ultra-low-density triturated metal nanoparticle misc Doped PVDF-HFP misc phase misc Electrical property misc Separator of a charge storage device Colossal Dielectric Response of PVDF-HFP Amalgamated Ultra-Low-Density Metal-Derived Nanoparticles: Frontier of an Excellent Charge Separator
authorStr	Mondal, D.
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topic_title	Colossal Dielectric Response of PVDF-HFP Amalgamated Ultra-Low-Density Metal-Derived Nanoparticles: Frontier of an Excellent Charge Separator Ultra-low-density triturated metal nanoparticle (dpeaa)DE-He213 Doped PVDF-HFP (dpeaa)DE-He213 phase (dpeaa)DE-He213 Electrical property (dpeaa)DE-He213 Separator of a charge storage device (dpeaa)DE-He213
topic	misc Ultra-low-density triturated metal nanoparticle misc Doped PVDF-HFP misc phase misc Electrical property misc Separator of a charge storage device
topic_unstemmed	misc Ultra-low-density triturated metal nanoparticle misc Doped PVDF-HFP misc phase misc Electrical property misc Separator of a charge storage device
topic_browse	misc Ultra-low-density triturated metal nanoparticle misc Doped PVDF-HFP misc phase misc Electrical property misc Separator of a charge storage device
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title	Colossal Dielectric Response of PVDF-HFP Amalgamated Ultra-Low-Density Metal-Derived Nanoparticles: Frontier of an Excellent Charge Separator
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title_full	Colossal Dielectric Response of PVDF-HFP Amalgamated Ultra-Low-Density Metal-Derived Nanoparticles: Frontier of an Excellent Charge Separator
author_sort	Mondal, D.
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author_browse	Mondal, D. Gayen, A. L. Paul, B. K. Bhar, D. S. Das, K. Nandy, P. Das, S.
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author-letter	Mondal, D.
doi_str_mv	10.1007/s11664-019-07401-5
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title_sort	colossal dielectric response of pvdf-hfp amalgamated ultra-low-density metal-derived nanoparticles: frontier of an excellent charge separator
title_auth	Colossal Dielectric Response of PVDF-HFP Amalgamated Ultra-Low-Density Metal-Derived Nanoparticles: Frontier of an Excellent Charge Separator
abstract	Abstract As a high-dielectric separator, a wide variety of polymers like poly(vinylidene fluoride) (PVDF) and its co-polymer such as poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) are commonly employed due to having modifiable electrical properties with impregnating suitable dopants in the fabrication of a high-performance charge storage device. In this report, improvement of efficiency has been studied by tuning the doping concentration of triturated material like ultra-low-density copper sulphate (ULDCS) within PVDF-HFP matrix and found a massive increment in β phase (β%), dielectric constant (εr) and ac conductivity (σac) with ∼ 2.3, ∼ 56 and ∼ 21 fold (at 100-Hz frequency), respectively, at a critical percentage of 10-ml doping compared to the pristine polymer matrix. One crucial factor like dielectric leakage has been taken into account intensely with reduction of ∼ 2.6 times at 100-Hz frequency with respect to the pristine one to obtain excellent behaviour of the separator. These extremely desirable properties can make the sample a very promising candidate to be used as a high-dielectric separator of an extraordinary charge storage device. In this context, a super-charge storage device has been fabricated using our synthesized high-dielectric material as a separator, and the device performance is amplified to a greater extent. Generation of high potential up to 3.77 V with high rate of retentivity (∼ 88.86%) is the key function of our device, and the efficiency of the device has also been verified by lighting up to 25 light-emitting diodes (LEDs) for 10 min. © The Minerals, Metals & Materials Society 2019
abstractGer	Abstract As a high-dielectric separator, a wide variety of polymers like poly(vinylidene fluoride) (PVDF) and its co-polymer such as poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) are commonly employed due to having modifiable electrical properties with impregnating suitable dopants in the fabrication of a high-performance charge storage device. In this report, improvement of efficiency has been studied by tuning the doping concentration of triturated material like ultra-low-density copper sulphate (ULDCS) within PVDF-HFP matrix and found a massive increment in β phase (β%), dielectric constant (εr) and ac conductivity (σac) with ∼ 2.3, ∼ 56 and ∼ 21 fold (at 100-Hz frequency), respectively, at a critical percentage of 10-ml doping compared to the pristine polymer matrix. One crucial factor like dielectric leakage has been taken into account intensely with reduction of ∼ 2.6 times at 100-Hz frequency with respect to the pristine one to obtain excellent behaviour of the separator. These extremely desirable properties can make the sample a very promising candidate to be used as a high-dielectric separator of an extraordinary charge storage device. In this context, a super-charge storage device has been fabricated using our synthesized high-dielectric material as a separator, and the device performance is amplified to a greater extent. Generation of high potential up to 3.77 V with high rate of retentivity (∼ 88.86%) is the key function of our device, and the efficiency of the device has also been verified by lighting up to 25 light-emitting diodes (LEDs) for 10 min. © The Minerals, Metals & Materials Society 2019
abstract_unstemmed	Abstract As a high-dielectric separator, a wide variety of polymers like poly(vinylidene fluoride) (PVDF) and its co-polymer such as poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) are commonly employed due to having modifiable electrical properties with impregnating suitable dopants in the fabrication of a high-performance charge storage device. In this report, improvement of efficiency has been studied by tuning the doping concentration of triturated material like ultra-low-density copper sulphate (ULDCS) within PVDF-HFP matrix and found a massive increment in β phase (β%), dielectric constant (εr) and ac conductivity (σac) with ∼ 2.3, ∼ 56 and ∼ 21 fold (at 100-Hz frequency), respectively, at a critical percentage of 10-ml doping compared to the pristine polymer matrix. One crucial factor like dielectric leakage has been taken into account intensely with reduction of ∼ 2.6 times at 100-Hz frequency with respect to the pristine one to obtain excellent behaviour of the separator. These extremely desirable properties can make the sample a very promising candidate to be used as a high-dielectric separator of an extraordinary charge storage device. In this context, a super-charge storage device has been fabricated using our synthesized high-dielectric material as a separator, and the device performance is amplified to a greater extent. Generation of high potential up to 3.77 V with high rate of retentivity (∼ 88.86%) is the key function of our device, and the efficiency of the device has also been verified by lighting up to 25 light-emitting diodes (LEDs) for 10 min. © The Minerals, Metals & Materials Society 2019
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container_issue	9
title_short	Colossal Dielectric Response of PVDF-HFP Amalgamated Ultra-Low-Density Metal-Derived Nanoparticles: Frontier of an Excellent Charge Separator
url	https://dx.doi.org/10.1007/s11664-019-07401-5
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author2	Gayen, A. L. Paul, B. K. Bhar, D. S. Das, K. Nandy, P. Das, S.
author2Str	Gayen, A. L. Paul, B. K. Bhar, D. S. Das, K. Nandy, P. Das, S.
ppnlink	324918739
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isOA_txt	false
hochschulschrift_bool	false
doi_str	10.1007/s11664-019-07401-5
up_date	2024-07-03T23:19:55.197Z
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