Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

Abstract Si/$ Si_{0.66} %$ Ge_{0.34} $coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HR...
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Autor*in:	Wang, Rui [verfasserIn] Yoon, Soon Fatt Lu, Fen Fan, Wei Jun Liu, Chong Yang Loh, Ter-Hoe Nguyen, Hoai Son Narayanan, Balasubramanian

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2007

Schlagwörter:	Si/SiGe Coupled quantum well UHV-CVD

Anmerkung:	© to the authors 2007

Übergeordnetes Werk:	Enthalten in: Nanoscale research letters - New York, NY [u.a.] : Springer, 2006, 2(2007), 3 vom: 27. Feb.
Übergeordnetes Werk:	volume:2 ; year:2007 ; number:3 ; day:27 ; month:02

Links:	Volltext

DOI / URN:	10.1007/s11671-007-9046-8

Katalog-ID:	SPR021707030

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520			\|a Abstract Si/$ Si_{0.66} %$ Ge_{0.34} $coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·p method with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.
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allfields	10.1007/s11671-007-9046-8 doi (DE-627)SPR021707030 (SPR)s11671-007-9046-8-e DE-627 ger DE-627 rakwb eng Wang, Rui verfasserin aut Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © to the authors 2007 Abstract Si/$ Si_{0.66} %$ Ge_{0.34} $coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·p method with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained. Si/SiGe (dpeaa)DE-He213 Coupled quantum well (dpeaa)DE-He213 UHV-CVD (dpeaa)DE-He213 Yoon, Soon Fatt aut Lu, Fen aut Fan, Wei Jun aut Liu, Chong Yang aut Loh, Ter-Hoe aut Nguyen, Hoai Son aut Narayanan, Balasubramanian aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 2(2007), 3 vom: 27. Feb. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:2 year:2007 number:3 day:27 month:02 https://dx.doi.org/10.1007/s11671-007-9046-8 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 2 2007 3 27 02
spelling	10.1007/s11671-007-9046-8 doi (DE-627)SPR021707030 (SPR)s11671-007-9046-8-e DE-627 ger DE-627 rakwb eng Wang, Rui verfasserin aut Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © to the authors 2007 Abstract Si/$ Si_{0.66} %$ Ge_{0.34} $coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·p method with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained. Si/SiGe (dpeaa)DE-He213 Coupled quantum well (dpeaa)DE-He213 UHV-CVD (dpeaa)DE-He213 Yoon, Soon Fatt aut Lu, Fen aut Fan, Wei Jun aut Liu, Chong Yang aut Loh, Ter-Hoe aut Nguyen, Hoai Son aut Narayanan, Balasubramanian aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 2(2007), 3 vom: 27. Feb. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:2 year:2007 number:3 day:27 month:02 https://dx.doi.org/10.1007/s11671-007-9046-8 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 2 2007 3 27 02
allfields_unstemmed	10.1007/s11671-007-9046-8 doi (DE-627)SPR021707030 (SPR)s11671-007-9046-8-e DE-627 ger DE-627 rakwb eng Wang, Rui verfasserin aut Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © to the authors 2007 Abstract Si/$ Si_{0.66} %$ Ge_{0.34} $coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·p method with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained. Si/SiGe (dpeaa)DE-He213 Coupled quantum well (dpeaa)DE-He213 UHV-CVD (dpeaa)DE-He213 Yoon, Soon Fatt aut Lu, Fen aut Fan, Wei Jun aut Liu, Chong Yang aut Loh, Ter-Hoe aut Nguyen, Hoai Son aut Narayanan, Balasubramanian aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 2(2007), 3 vom: 27. Feb. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:2 year:2007 number:3 day:27 month:02 https://dx.doi.org/10.1007/s11671-007-9046-8 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 2 2007 3 27 02
allfieldsGer	10.1007/s11671-007-9046-8 doi (DE-627)SPR021707030 (SPR)s11671-007-9046-8-e DE-627 ger DE-627 rakwb eng Wang, Rui verfasserin aut Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © to the authors 2007 Abstract Si/$ Si_{0.66} %$ Ge_{0.34} $coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·p method with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained. Si/SiGe (dpeaa)DE-He213 Coupled quantum well (dpeaa)DE-He213 UHV-CVD (dpeaa)DE-He213 Yoon, Soon Fatt aut Lu, Fen aut Fan, Wei Jun aut Liu, Chong Yang aut Loh, Ter-Hoe aut Nguyen, Hoai Son aut Narayanan, Balasubramanian aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 2(2007), 3 vom: 27. Feb. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:2 year:2007 number:3 day:27 month:02 https://dx.doi.org/10.1007/s11671-007-9046-8 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 2 2007 3 27 02
allfieldsSound	10.1007/s11671-007-9046-8 doi (DE-627)SPR021707030 (SPR)s11671-007-9046-8-e DE-627 ger DE-627 rakwb eng Wang, Rui verfasserin aut Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © to the authors 2007 Abstract Si/$ Si_{0.66} %$ Ge_{0.34} $coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·p method with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained. Si/SiGe (dpeaa)DE-He213 Coupled quantum well (dpeaa)DE-He213 UHV-CVD (dpeaa)DE-He213 Yoon, Soon Fatt aut Lu, Fen aut Fan, Wei Jun aut Liu, Chong Yang aut Loh, Ter-Hoe aut Nguyen, Hoai Son aut Narayanan, Balasubramanian aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 2(2007), 3 vom: 27. Feb. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:2 year:2007 number:3 day:27 month:02 https://dx.doi.org/10.1007/s11671-007-9046-8 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 2 2007 3 27 02
language	English
source	Enthalten in Nanoscale research letters 2(2007), 3 vom: 27. Feb. volume:2 year:2007 number:3 day:27 month:02
sourceStr	Enthalten in Nanoscale research letters 2(2007), 3 vom: 27. Feb. volume:2 year:2007 number:3 day:27 month:02
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Si/SiGe Coupled quantum well UHV-CVD
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container_title	Nanoscale research letters
authorswithroles_txt_mv	Wang, Rui @@aut@@ Yoon, Soon Fatt @@aut@@ Lu, Fen @@aut@@ Fan, Wei Jun @@aut@@ Liu, Chong Yang @@aut@@ Loh, Ter-Hoe @@aut@@ Nguyen, Hoai Son @@aut@@ Narayanan, Balasubramanian @@aut@@
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author	Wang, Rui
spellingShingle	Wang, Rui misc Si/SiGe misc Coupled quantum well misc UHV-CVD Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
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topic_title	Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition Si/SiGe (dpeaa)DE-He213 Coupled quantum well (dpeaa)DE-He213 UHV-CVD (dpeaa)DE-He213
topic	misc Si/SiGe misc Coupled quantum well misc UHV-CVD
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title	Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
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title_full	Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
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title_sort	interwell coupling effect in si/sige quantum wells grown by ultra high vacuum chemical vapor deposition
title_auth	Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
abstract	Abstract Si/$ Si_{0.66} %$ Ge_{0.34} $coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·p method with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained. © to the authors 2007
abstractGer	Abstract Si/$ Si_{0.66} %$ Ge_{0.34} $coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·p method with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained. © to the authors 2007
abstract_unstemmed	Abstract Si/$ Si_{0.66} %$ Ge_{0.34} $coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·p method with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained. © to the authors 2007
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title_short	Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
url	https://dx.doi.org/10.1007/s11671-007-9046-8
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author2	Yoon, Soon Fatt Lu, Fen Fan, Wei Jun Liu, Chong Yang Loh, Ter-Hoe Nguyen, Hoai Son Narayanan, Balasubramanian
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Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

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