Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

Abstract As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide ($ SiO_{2} $) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar...
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Autor*in:	Di, Dawei [verfasserIn] Perez-Wurfl, Ivan Gentle, Angus Kim, Dong-Ho Hao, Xiaojing Shi, Lei Conibeer, Gavin Green, Martin A.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2010

Schlagwörter:	Silicon Quantum dots Solar cells Third generation Electrical characterisation

Anmerkung:	© The Author(s) 2010

Übergeordnetes Werk:	Enthalten in: Nanoscale research letters - New York, NY [u.a.] : Springer, 2006, 5(2010), 11 vom: 01. Aug.
Übergeordnetes Werk:	volume:5 ; year:2010 ; number:11 ; day:01 ; month:08

Links:	Volltext

DOI / URN:	10.1007/s11671-010-9707-x

Katalog-ID:	SPR02171195X

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520			\|a Abstract As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide ($ SiO_{2} $) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid ($ H_{3} %$ PO_{4} $) etching, nitrogen ($ N_{2} $) gas anneal and forming gas (Ar: $ H_{2} $) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I–V, light I–V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.
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allfields	10.1007/s11671-010-9707-x doi (DE-627)SPR02171195X (SPR)s11671-010-9707-x-e DE-627 ger DE-627 rakwb eng Di, Dawei verfasserin aut Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2010 Abstract As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide ($ SiO_{2} $) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid ($ H_{3} %$ PO_{4} $) etching, nitrogen ($ N_{2} $) gas anneal and forming gas (Ar: $ H_{2} $) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I–V, light I–V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement. Silicon (dpeaa)DE-He213 Quantum dots (dpeaa)DE-He213 Solar cells (dpeaa)DE-He213 Third generation (dpeaa)DE-He213 Electrical characterisation (dpeaa)DE-He213 Perez-Wurfl, Ivan aut Gentle, Angus aut Kim, Dong-Ho aut Hao, Xiaojing aut Shi, Lei aut Conibeer, Gavin aut Green, Martin A. aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 5(2010), 11 vom: 01. Aug. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:5 year:2010 number:11 day:01 month:08 https://dx.doi.org/10.1007/s11671-010-9707-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2010 11 01 08
spelling	10.1007/s11671-010-9707-x doi (DE-627)SPR02171195X (SPR)s11671-010-9707-x-e DE-627 ger DE-627 rakwb eng Di, Dawei verfasserin aut Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2010 Abstract As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide ($ SiO_{2} $) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid ($ H_{3} %$ PO_{4} $) etching, nitrogen ($ N_{2} $) gas anneal and forming gas (Ar: $ H_{2} $) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I–V, light I–V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement. Silicon (dpeaa)DE-He213 Quantum dots (dpeaa)DE-He213 Solar cells (dpeaa)DE-He213 Third generation (dpeaa)DE-He213 Electrical characterisation (dpeaa)DE-He213 Perez-Wurfl, Ivan aut Gentle, Angus aut Kim, Dong-Ho aut Hao, Xiaojing aut Shi, Lei aut Conibeer, Gavin aut Green, Martin A. aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 5(2010), 11 vom: 01. Aug. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:5 year:2010 number:11 day:01 month:08 https://dx.doi.org/10.1007/s11671-010-9707-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2010 11 01 08
allfields_unstemmed	10.1007/s11671-010-9707-x doi (DE-627)SPR02171195X (SPR)s11671-010-9707-x-e DE-627 ger DE-627 rakwb eng Di, Dawei verfasserin aut Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2010 Abstract As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide ($ SiO_{2} $) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid ($ H_{3} %$ PO_{4} $) etching, nitrogen ($ N_{2} $) gas anneal and forming gas (Ar: $ H_{2} $) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I–V, light I–V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement. Silicon (dpeaa)DE-He213 Quantum dots (dpeaa)DE-He213 Solar cells (dpeaa)DE-He213 Third generation (dpeaa)DE-He213 Electrical characterisation (dpeaa)DE-He213 Perez-Wurfl, Ivan aut Gentle, Angus aut Kim, Dong-Ho aut Hao, Xiaojing aut Shi, Lei aut Conibeer, Gavin aut Green, Martin A. aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 5(2010), 11 vom: 01. Aug. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:5 year:2010 number:11 day:01 month:08 https://dx.doi.org/10.1007/s11671-010-9707-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2010 11 01 08
allfieldsGer	10.1007/s11671-010-9707-x doi (DE-627)SPR02171195X (SPR)s11671-010-9707-x-e DE-627 ger DE-627 rakwb eng Di, Dawei verfasserin aut Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2010 Abstract As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide ($ SiO_{2} $) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid ($ H_{3} %$ PO_{4} $) etching, nitrogen ($ N_{2} $) gas anneal and forming gas (Ar: $ H_{2} $) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I–V, light I–V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement. Silicon (dpeaa)DE-He213 Quantum dots (dpeaa)DE-He213 Solar cells (dpeaa)DE-He213 Third generation (dpeaa)DE-He213 Electrical characterisation (dpeaa)DE-He213 Perez-Wurfl, Ivan aut Gentle, Angus aut Kim, Dong-Ho aut Hao, Xiaojing aut Shi, Lei aut Conibeer, Gavin aut Green, Martin A. aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 5(2010), 11 vom: 01. Aug. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:5 year:2010 number:11 day:01 month:08 https://dx.doi.org/10.1007/s11671-010-9707-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2010 11 01 08
allfieldsSound	10.1007/s11671-010-9707-x doi (DE-627)SPR02171195X (SPR)s11671-010-9707-x-e DE-627 ger DE-627 rakwb eng Di, Dawei verfasserin aut Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2010 Abstract As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide ($ SiO_{2} $) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid ($ H_{3} %$ PO_{4} $) etching, nitrogen ($ N_{2} $) gas anneal and forming gas (Ar: $ H_{2} $) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I–V, light I–V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement. Silicon (dpeaa)DE-He213 Quantum dots (dpeaa)DE-He213 Solar cells (dpeaa)DE-He213 Third generation (dpeaa)DE-He213 Electrical characterisation (dpeaa)DE-He213 Perez-Wurfl, Ivan aut Gentle, Angus aut Kim, Dong-Ho aut Hao, Xiaojing aut Shi, Lei aut Conibeer, Gavin aut Green, Martin A. aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 5(2010), 11 vom: 01. Aug. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:5 year:2010 number:11 day:01 month:08 https://dx.doi.org/10.1007/s11671-010-9707-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2010 11 01 08
language	English
source	Enthalten in Nanoscale research letters 5(2010), 11 vom: 01. Aug. volume:5 year:2010 number:11 day:01 month:08
sourceStr	Enthalten in Nanoscale research letters 5(2010), 11 vom: 01. Aug. volume:5 year:2010 number:11 day:01 month:08
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authorswithroles_txt_mv	Di, Dawei @@aut@@ Perez-Wurfl, Ivan @@aut@@ Gentle, Angus @@aut@@ Kim, Dong-Ho @@aut@@ Hao, Xiaojing @@aut@@ Shi, Lei @@aut@@ Conibeer, Gavin @@aut@@ Green, Martin A. @@aut@@
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author	Di, Dawei
spellingShingle	Di, Dawei misc Silicon misc Quantum dots misc Solar cells misc Third generation misc Electrical characterisation Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells
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topic_title	Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells Silicon (dpeaa)DE-He213 Quantum dots (dpeaa)DE-He213 Solar cells (dpeaa)DE-He213 Third generation (dpeaa)DE-He213 Electrical characterisation (dpeaa)DE-He213
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title	Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells
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title_full	Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells
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title_sort	impacts of post-metallisation processes on the electrical and photovoltaic properties of si quantum dot solar cells
title_auth	Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells
abstract	Abstract As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide ($ SiO_{2} $) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid ($ H_{3} %$ PO_{4} $) etching, nitrogen ($ N_{2} $) gas anneal and forming gas (Ar: $ H_{2} $) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I–V, light I–V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement. © The Author(s) 2010
abstractGer	Abstract As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide ($ SiO_{2} $) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid ($ H_{3} %$ PO_{4} $) etching, nitrogen ($ N_{2} $) gas anneal and forming gas (Ar: $ H_{2} $) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I–V, light I–V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement. © The Author(s) 2010
abstract_unstemmed	Abstract As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide ($ SiO_{2} $) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid ($ H_{3} %$ PO_{4} $) etching, nitrogen ($ N_{2} $) gas anneal and forming gas (Ar: $ H_{2} $) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I–V, light I–V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement. © The Author(s) 2010
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title_short	Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells
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Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

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