Fabrication of a Highly Sensitive Chemical Sensor Based on ZnO Nanorod Arrays
Abstract We report a novel method for fabricating a highly sensitive chemical sensor based on a ZnO nanorod array that is epitaxially grown on a Pt-coated Si substrate, with a top–top electrode configuration. To practically test the device, its $ O_{2} $ and $ NO_{2} $ sensing properties were invest...
Ausführliche Beschreibung
Autor*in: |
Park, JaeYoung [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2009 |
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Schlagwörter: |
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Anmerkung: |
© to the authors 2009 |
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Übergeordnetes Werk: |
Enthalten in: Nanoscale research letters - New York, NY [u.a.] : Springer, 2006, 5(2009), 2 vom: 18. Nov. |
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Übergeordnetes Werk: |
volume:5 ; year:2009 ; number:2 ; day:18 ; month:11 |
Links: |
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DOI / URN: |
10.1007/s11671-009-9487-3 |
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Katalog-ID: |
SPR02171259X |
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10.1007/s11671-009-9487-3 doi (DE-627)SPR02171259X (SPR)s11671-009-9487-3-e DE-627 ger DE-627 rakwb eng Park, JaeYoung verfasserin aut Fabrication of a Highly Sensitive Chemical Sensor Based on ZnO Nanorod Arrays 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © to the authors 2009 Abstract We report a novel method for fabricating a highly sensitive chemical sensor based on a ZnO nanorod array that is epitaxially grown on a Pt-coated Si substrate, with a top–top electrode configuration. To practically test the device, its $ O_{2} $ and $ NO_{2} $ sensing properties were investigated. The gas sensing properties of this type of device suggest that the approach is promising for the fabrication of sensitive and reliable nanorod chemical sensors. ZnO nanorod array (dpeaa)DE-He213 Chemical sensor (dpeaa)DE-He213 MOCVD (dpeaa)DE-He213 Choi, Sun-Woo aut Kim, SangSub aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 5(2009), 2 vom: 18. Nov. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:5 year:2009 number:2 day:18 month:11 https://dx.doi.org/10.1007/s11671-009-9487-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2009 2 18 11 |
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10.1007/s11671-009-9487-3 doi (DE-627)SPR02171259X (SPR)s11671-009-9487-3-e DE-627 ger DE-627 rakwb eng Park, JaeYoung verfasserin aut Fabrication of a Highly Sensitive Chemical Sensor Based on ZnO Nanorod Arrays 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © to the authors 2009 Abstract We report a novel method for fabricating a highly sensitive chemical sensor based on a ZnO nanorod array that is epitaxially grown on a Pt-coated Si substrate, with a top–top electrode configuration. To practically test the device, its $ O_{2} $ and $ NO_{2} $ sensing properties were investigated. The gas sensing properties of this type of device suggest that the approach is promising for the fabrication of sensitive and reliable nanorod chemical sensors. ZnO nanorod array (dpeaa)DE-He213 Chemical sensor (dpeaa)DE-He213 MOCVD (dpeaa)DE-He213 Choi, Sun-Woo aut Kim, SangSub aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 5(2009), 2 vom: 18. Nov. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:5 year:2009 number:2 day:18 month:11 https://dx.doi.org/10.1007/s11671-009-9487-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2009 2 18 11 |
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10.1007/s11671-009-9487-3 doi (DE-627)SPR02171259X (SPR)s11671-009-9487-3-e DE-627 ger DE-627 rakwb eng Park, JaeYoung verfasserin aut Fabrication of a Highly Sensitive Chemical Sensor Based on ZnO Nanorod Arrays 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © to the authors 2009 Abstract We report a novel method for fabricating a highly sensitive chemical sensor based on a ZnO nanorod array that is epitaxially grown on a Pt-coated Si substrate, with a top–top electrode configuration. To practically test the device, its $ O_{2} $ and $ NO_{2} $ sensing properties were investigated. The gas sensing properties of this type of device suggest that the approach is promising for the fabrication of sensitive and reliable nanorod chemical sensors. ZnO nanorod array (dpeaa)DE-He213 Chemical sensor (dpeaa)DE-He213 MOCVD (dpeaa)DE-He213 Choi, Sun-Woo aut Kim, SangSub aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 5(2009), 2 vom: 18. Nov. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:5 year:2009 number:2 day:18 month:11 https://dx.doi.org/10.1007/s11671-009-9487-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2009 2 18 11 |
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10.1007/s11671-009-9487-3 doi (DE-627)SPR02171259X (SPR)s11671-009-9487-3-e DE-627 ger DE-627 rakwb eng Park, JaeYoung verfasserin aut Fabrication of a Highly Sensitive Chemical Sensor Based on ZnO Nanorod Arrays 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © to the authors 2009 Abstract We report a novel method for fabricating a highly sensitive chemical sensor based on a ZnO nanorod array that is epitaxially grown on a Pt-coated Si substrate, with a top–top electrode configuration. To practically test the device, its $ O_{2} $ and $ NO_{2} $ sensing properties were investigated. The gas sensing properties of this type of device suggest that the approach is promising for the fabrication of sensitive and reliable nanorod chemical sensors. ZnO nanorod array (dpeaa)DE-He213 Chemical sensor (dpeaa)DE-He213 MOCVD (dpeaa)DE-He213 Choi, Sun-Woo aut Kim, SangSub aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 5(2009), 2 vom: 18. Nov. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:5 year:2009 number:2 day:18 month:11 https://dx.doi.org/10.1007/s11671-009-9487-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2009 2 18 11 |
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10.1007/s11671-009-9487-3 doi (DE-627)SPR02171259X (SPR)s11671-009-9487-3-e DE-627 ger DE-627 rakwb eng Park, JaeYoung verfasserin aut Fabrication of a Highly Sensitive Chemical Sensor Based on ZnO Nanorod Arrays 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © to the authors 2009 Abstract We report a novel method for fabricating a highly sensitive chemical sensor based on a ZnO nanorod array that is epitaxially grown on a Pt-coated Si substrate, with a top–top electrode configuration. To practically test the device, its $ O_{2} $ and $ NO_{2} $ sensing properties were investigated. The gas sensing properties of this type of device suggest that the approach is promising for the fabrication of sensitive and reliable nanorod chemical sensors. ZnO nanorod array (dpeaa)DE-He213 Chemical sensor (dpeaa)DE-He213 MOCVD (dpeaa)DE-He213 Choi, Sun-Woo aut Kim, SangSub aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 5(2009), 2 vom: 18. Nov. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:5 year:2009 number:2 day:18 month:11 https://dx.doi.org/10.1007/s11671-009-9487-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2009 2 18 11 |
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Park, JaeYoung misc ZnO nanorod array misc Chemical sensor misc MOCVD Fabrication of a Highly Sensitive Chemical Sensor Based on ZnO Nanorod Arrays |
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Fabrication of a Highly Sensitive Chemical Sensor Based on ZnO Nanorod Arrays |
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Abstract We report a novel method for fabricating a highly sensitive chemical sensor based on a ZnO nanorod array that is epitaxially grown on a Pt-coated Si substrate, with a top–top electrode configuration. To practically test the device, its $ O_{2} $ and $ NO_{2} $ sensing properties were investigated. The gas sensing properties of this type of device suggest that the approach is promising for the fabrication of sensitive and reliable nanorod chemical sensors. © to the authors 2009 |
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Abstract We report a novel method for fabricating a highly sensitive chemical sensor based on a ZnO nanorod array that is epitaxially grown on a Pt-coated Si substrate, with a top–top electrode configuration. To practically test the device, its $ O_{2} $ and $ NO_{2} $ sensing properties were investigated. The gas sensing properties of this type of device suggest that the approach is promising for the fabrication of sensitive and reliable nanorod chemical sensors. © to the authors 2009 |
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Abstract We report a novel method for fabricating a highly sensitive chemical sensor based on a ZnO nanorod array that is epitaxially grown on a Pt-coated Si substrate, with a top–top electrode configuration. To practically test the device, its $ O_{2} $ and $ NO_{2} $ sensing properties were investigated. The gas sensing properties of this type of device suggest that the approach is promising for the fabrication of sensitive and reliable nanorod chemical sensors. © to the authors 2009 |
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