Si solid-state quantum dot-based materials for tandem solar cells

Abstract The concept of third-generation photovoltaics is to significantly increase device efficiencies whilst still using thin-film processes and abundant non-toxic materials. A strong potential approach is to fabricate tandem cells using thin-film deposition that can optimise collection of energy...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Conibeer, Gavin [verfasserIn] Perez-Wurfl, Ivan [verfasserIn] Hao, Xiaojing [verfasserIn] Di, Dawei [verfasserIn] Lin, Dong [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2012

Schlagwörter:	band gap engineering quantum dots photovoltaics tandem cells modulation doping nucleation third generation

Übergeordnetes Werk:	Enthalten in: Nanoscale research letters - New York, NY [u.a.] : Springer, 2006, 7(2012), 1 vom: 21. März
Übergeordnetes Werk:	volume:7 ; year:2012 ; number:1 ; day:21 ; month:03

Links:	Volltext

DOI / URN:	10.1186/1556-276X-7-193

Katalog-ID:	SPR021741913

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520			\|a Abstract The concept of third-generation photovoltaics is to significantly increase device efficiencies whilst still using thin-film processes and abundant non-toxic materials. A strong potential approach is to fabricate tandem cells using thin-film deposition that can optimise collection of energy in a series of cells with decreasing band gap stacked on top of each other. Quantum dot materials, in which Si quantum dots (QDs) are embedded in a dielectric matrix, offer the potential to tune the effective band gap, through quantum confinement, and allow fabrication of optimised tandem solar cell devices in one growth run in a thin-film process. Such cells can be fabricated by sputtering of thin layers of silicon rich oxide sandwiched between a stoichiometric oxide that on annealing crystallise to form Si QDs of uniform and controllable size. For approximately 2-nm diameter QDs, these result in an effective band gap of 1.8 eV. Introduction of phosphorous or boron during the growth of the multilayers results in doping and a rectifying junction, which demonstrates photovoltaic behaviour with an open circuit voltage (VOC) of almost 500 mV. However, the doping behaviour of P and B in these QD materials is not well understood. A modified modulation doping model for the doping mechanisms in these materials is discussed which relies on doping of a sub-oxide region around the Si QDs.
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allfields	10.1186/1556-276X-7-193 doi (DE-627)SPR021741913 (SPR)1556-276X-7-193-e DE-627 ger DE-627 rakwb eng 600 ASE Conibeer, Gavin verfasserin aut Si solid-state quantum dot-based materials for tandem solar cells 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The concept of third-generation photovoltaics is to significantly increase device efficiencies whilst still using thin-film processes and abundant non-toxic materials. A strong potential approach is to fabricate tandem cells using thin-film deposition that can optimise collection of energy in a series of cells with decreasing band gap stacked on top of each other. Quantum dot materials, in which Si quantum dots (QDs) are embedded in a dielectric matrix, offer the potential to tune the effective band gap, through quantum confinement, and allow fabrication of optimised tandem solar cell devices in one growth run in a thin-film process. Such cells can be fabricated by sputtering of thin layers of silicon rich oxide sandwiched between a stoichiometric oxide that on annealing crystallise to form Si QDs of uniform and controllable size. For approximately 2-nm diameter QDs, these result in an effective band gap of 1.8 eV. Introduction of phosphorous or boron during the growth of the multilayers results in doping and a rectifying junction, which demonstrates photovoltaic behaviour with an open circuit voltage (VOC) of almost 500 mV. However, the doping behaviour of P and B in these QD materials is not well understood. A modified modulation doping model for the doping mechanisms in these materials is discussed which relies on doping of a sub-oxide region around the Si QDs. band gap engineering (dpeaa)DE-He213 quantum dots (dpeaa)DE-He213 photovoltaics (dpeaa)DE-He213 tandem cells (dpeaa)DE-He213 modulation doping (dpeaa)DE-He213 nucleation (dpeaa)DE-He213 third generation (dpeaa)DE-He213 Perez-Wurfl, Ivan verfasserin aut Hao, Xiaojing verfasserin aut Di, Dawei verfasserin aut Lin, Dong verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 7(2012), 1 vom: 21. März (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:7 year:2012 number:1 day:21 month:03 https://dx.doi.org/10.1186/1556-276X-7-193 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2012 1 21 03
spelling	10.1186/1556-276X-7-193 doi (DE-627)SPR021741913 (SPR)1556-276X-7-193-e DE-627 ger DE-627 rakwb eng 600 ASE Conibeer, Gavin verfasserin aut Si solid-state quantum dot-based materials for tandem solar cells 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The concept of third-generation photovoltaics is to significantly increase device efficiencies whilst still using thin-film processes and abundant non-toxic materials. A strong potential approach is to fabricate tandem cells using thin-film deposition that can optimise collection of energy in a series of cells with decreasing band gap stacked on top of each other. Quantum dot materials, in which Si quantum dots (QDs) are embedded in a dielectric matrix, offer the potential to tune the effective band gap, through quantum confinement, and allow fabrication of optimised tandem solar cell devices in one growth run in a thin-film process. Such cells can be fabricated by sputtering of thin layers of silicon rich oxide sandwiched between a stoichiometric oxide that on annealing crystallise to form Si QDs of uniform and controllable size. For approximately 2-nm diameter QDs, these result in an effective band gap of 1.8 eV. Introduction of phosphorous or boron during the growth of the multilayers results in doping and a rectifying junction, which demonstrates photovoltaic behaviour with an open circuit voltage (VOC) of almost 500 mV. However, the doping behaviour of P and B in these QD materials is not well understood. A modified modulation doping model for the doping mechanisms in these materials is discussed which relies on doping of a sub-oxide region around the Si QDs. band gap engineering (dpeaa)DE-He213 quantum dots (dpeaa)DE-He213 photovoltaics (dpeaa)DE-He213 tandem cells (dpeaa)DE-He213 modulation doping (dpeaa)DE-He213 nucleation (dpeaa)DE-He213 third generation (dpeaa)DE-He213 Perez-Wurfl, Ivan verfasserin aut Hao, Xiaojing verfasserin aut Di, Dawei verfasserin aut Lin, Dong verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 7(2012), 1 vom: 21. März (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:7 year:2012 number:1 day:21 month:03 https://dx.doi.org/10.1186/1556-276X-7-193 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2012 1 21 03
allfields_unstemmed	10.1186/1556-276X-7-193 doi (DE-627)SPR021741913 (SPR)1556-276X-7-193-e DE-627 ger DE-627 rakwb eng 600 ASE Conibeer, Gavin verfasserin aut Si solid-state quantum dot-based materials for tandem solar cells 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The concept of third-generation photovoltaics is to significantly increase device efficiencies whilst still using thin-film processes and abundant non-toxic materials. A strong potential approach is to fabricate tandem cells using thin-film deposition that can optimise collection of energy in a series of cells with decreasing band gap stacked on top of each other. Quantum dot materials, in which Si quantum dots (QDs) are embedded in a dielectric matrix, offer the potential to tune the effective band gap, through quantum confinement, and allow fabrication of optimised tandem solar cell devices in one growth run in a thin-film process. Such cells can be fabricated by sputtering of thin layers of silicon rich oxide sandwiched between a stoichiometric oxide that on annealing crystallise to form Si QDs of uniform and controllable size. For approximately 2-nm diameter QDs, these result in an effective band gap of 1.8 eV. Introduction of phosphorous or boron during the growth of the multilayers results in doping and a rectifying junction, which demonstrates photovoltaic behaviour with an open circuit voltage (VOC) of almost 500 mV. However, the doping behaviour of P and B in these QD materials is not well understood. A modified modulation doping model for the doping mechanisms in these materials is discussed which relies on doping of a sub-oxide region around the Si QDs. band gap engineering (dpeaa)DE-He213 quantum dots (dpeaa)DE-He213 photovoltaics (dpeaa)DE-He213 tandem cells (dpeaa)DE-He213 modulation doping (dpeaa)DE-He213 nucleation (dpeaa)DE-He213 third generation (dpeaa)DE-He213 Perez-Wurfl, Ivan verfasserin aut Hao, Xiaojing verfasserin aut Di, Dawei verfasserin aut Lin, Dong verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 7(2012), 1 vom: 21. März (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:7 year:2012 number:1 day:21 month:03 https://dx.doi.org/10.1186/1556-276X-7-193 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2012 1 21 03
allfieldsGer	10.1186/1556-276X-7-193 doi (DE-627)SPR021741913 (SPR)1556-276X-7-193-e DE-627 ger DE-627 rakwb eng 600 ASE Conibeer, Gavin verfasserin aut Si solid-state quantum dot-based materials for tandem solar cells 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The concept of third-generation photovoltaics is to significantly increase device efficiencies whilst still using thin-film processes and abundant non-toxic materials. A strong potential approach is to fabricate tandem cells using thin-film deposition that can optimise collection of energy in a series of cells with decreasing band gap stacked on top of each other. Quantum dot materials, in which Si quantum dots (QDs) are embedded in a dielectric matrix, offer the potential to tune the effective band gap, through quantum confinement, and allow fabrication of optimised tandem solar cell devices in one growth run in a thin-film process. Such cells can be fabricated by sputtering of thin layers of silicon rich oxide sandwiched between a stoichiometric oxide that on annealing crystallise to form Si QDs of uniform and controllable size. For approximately 2-nm diameter QDs, these result in an effective band gap of 1.8 eV. Introduction of phosphorous or boron during the growth of the multilayers results in doping and a rectifying junction, which demonstrates photovoltaic behaviour with an open circuit voltage (VOC) of almost 500 mV. However, the doping behaviour of P and B in these QD materials is not well understood. A modified modulation doping model for the doping mechanisms in these materials is discussed which relies on doping of a sub-oxide region around the Si QDs. band gap engineering (dpeaa)DE-He213 quantum dots (dpeaa)DE-He213 photovoltaics (dpeaa)DE-He213 tandem cells (dpeaa)DE-He213 modulation doping (dpeaa)DE-He213 nucleation (dpeaa)DE-He213 third generation (dpeaa)DE-He213 Perez-Wurfl, Ivan verfasserin aut Hao, Xiaojing verfasserin aut Di, Dawei verfasserin aut Lin, Dong verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 7(2012), 1 vom: 21. März (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:7 year:2012 number:1 day:21 month:03 https://dx.doi.org/10.1186/1556-276X-7-193 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2012 1 21 03
allfieldsSound	10.1186/1556-276X-7-193 doi (DE-627)SPR021741913 (SPR)1556-276X-7-193-e DE-627 ger DE-627 rakwb eng 600 ASE Conibeer, Gavin verfasserin aut Si solid-state quantum dot-based materials for tandem solar cells 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The concept of third-generation photovoltaics is to significantly increase device efficiencies whilst still using thin-film processes and abundant non-toxic materials. A strong potential approach is to fabricate tandem cells using thin-film deposition that can optimise collection of energy in a series of cells with decreasing band gap stacked on top of each other. Quantum dot materials, in which Si quantum dots (QDs) are embedded in a dielectric matrix, offer the potential to tune the effective band gap, through quantum confinement, and allow fabrication of optimised tandem solar cell devices in one growth run in a thin-film process. Such cells can be fabricated by sputtering of thin layers of silicon rich oxide sandwiched between a stoichiometric oxide that on annealing crystallise to form Si QDs of uniform and controllable size. For approximately 2-nm diameter QDs, these result in an effective band gap of 1.8 eV. Introduction of phosphorous or boron during the growth of the multilayers results in doping and a rectifying junction, which demonstrates photovoltaic behaviour with an open circuit voltage (VOC) of almost 500 mV. However, the doping behaviour of P and B in these QD materials is not well understood. A modified modulation doping model for the doping mechanisms in these materials is discussed which relies on doping of a sub-oxide region around the Si QDs. band gap engineering (dpeaa)DE-He213 quantum dots (dpeaa)DE-He213 photovoltaics (dpeaa)DE-He213 tandem cells (dpeaa)DE-He213 modulation doping (dpeaa)DE-He213 nucleation (dpeaa)DE-He213 third generation (dpeaa)DE-He213 Perez-Wurfl, Ivan verfasserin aut Hao, Xiaojing verfasserin aut Di, Dawei verfasserin aut Lin, Dong verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 7(2012), 1 vom: 21. März (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:7 year:2012 number:1 day:21 month:03 https://dx.doi.org/10.1186/1556-276X-7-193 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 7 2012 1 21 03
language	English
source	Enthalten in Nanoscale research letters 7(2012), 1 vom: 21. März volume:7 year:2012 number:1 day:21 month:03
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institution	findex.gbv.de
topic_facet	band gap engineering quantum dots photovoltaics tandem cells modulation doping nucleation third generation
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container_title	Nanoscale research letters
authorswithroles_txt_mv	Conibeer, Gavin @@aut@@ Perez-Wurfl, Ivan @@aut@@ Hao, Xiaojing @@aut@@ Di, Dawei @@aut@@ Lin, Dong @@aut@@
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author	Conibeer, Gavin
spellingShingle	Conibeer, Gavin ddc 600 misc band gap engineering misc quantum dots misc photovoltaics misc tandem cells misc modulation doping misc nucleation misc third generation Si solid-state quantum dot-based materials for tandem solar cells
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topic	ddc 600 misc band gap engineering misc quantum dots misc photovoltaics misc tandem cells misc modulation doping misc nucleation misc third generation
topic_unstemmed	ddc 600 misc band gap engineering misc quantum dots misc photovoltaics misc tandem cells misc modulation doping misc nucleation misc third generation
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title	Si solid-state quantum dot-based materials for tandem solar cells
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title_sort	si solid-state quantum dot-based materials for tandem solar cells
title_auth	Si solid-state quantum dot-based materials for tandem solar cells
abstract	Abstract The concept of third-generation photovoltaics is to significantly increase device efficiencies whilst still using thin-film processes and abundant non-toxic materials. A strong potential approach is to fabricate tandem cells using thin-film deposition that can optimise collection of energy in a series of cells with decreasing band gap stacked on top of each other. Quantum dot materials, in which Si quantum dots (QDs) are embedded in a dielectric matrix, offer the potential to tune the effective band gap, through quantum confinement, and allow fabrication of optimised tandem solar cell devices in one growth run in a thin-film process. Such cells can be fabricated by sputtering of thin layers of silicon rich oxide sandwiched between a stoichiometric oxide that on annealing crystallise to form Si QDs of uniform and controllable size. For approximately 2-nm diameter QDs, these result in an effective band gap of 1.8 eV. Introduction of phosphorous or boron during the growth of the multilayers results in doping and a rectifying junction, which demonstrates photovoltaic behaviour with an open circuit voltage (VOC) of almost 500 mV. However, the doping behaviour of P and B in these QD materials is not well understood. A modified modulation doping model for the doping mechanisms in these materials is discussed which relies on doping of a sub-oxide region around the Si QDs.
abstractGer	Abstract The concept of third-generation photovoltaics is to significantly increase device efficiencies whilst still using thin-film processes and abundant non-toxic materials. A strong potential approach is to fabricate tandem cells using thin-film deposition that can optimise collection of energy in a series of cells with decreasing band gap stacked on top of each other. Quantum dot materials, in which Si quantum dots (QDs) are embedded in a dielectric matrix, offer the potential to tune the effective band gap, through quantum confinement, and allow fabrication of optimised tandem solar cell devices in one growth run in a thin-film process. Such cells can be fabricated by sputtering of thin layers of silicon rich oxide sandwiched between a stoichiometric oxide that on annealing crystallise to form Si QDs of uniform and controllable size. For approximately 2-nm diameter QDs, these result in an effective band gap of 1.8 eV. Introduction of phosphorous or boron during the growth of the multilayers results in doping and a rectifying junction, which demonstrates photovoltaic behaviour with an open circuit voltage (VOC) of almost 500 mV. However, the doping behaviour of P and B in these QD materials is not well understood. A modified modulation doping model for the doping mechanisms in these materials is discussed which relies on doping of a sub-oxide region around the Si QDs.
abstract_unstemmed	Abstract The concept of third-generation photovoltaics is to significantly increase device efficiencies whilst still using thin-film processes and abundant non-toxic materials. A strong potential approach is to fabricate tandem cells using thin-film deposition that can optimise collection of energy in a series of cells with decreasing band gap stacked on top of each other. Quantum dot materials, in which Si quantum dots (QDs) are embedded in a dielectric matrix, offer the potential to tune the effective band gap, through quantum confinement, and allow fabrication of optimised tandem solar cell devices in one growth run in a thin-film process. Such cells can be fabricated by sputtering of thin layers of silicon rich oxide sandwiched between a stoichiometric oxide that on annealing crystallise to form Si QDs of uniform and controllable size. For approximately 2-nm diameter QDs, these result in an effective band gap of 1.8 eV. Introduction of phosphorous or boron during the growth of the multilayers results in doping and a rectifying junction, which demonstrates photovoltaic behaviour with an open circuit voltage (VOC) of almost 500 mV. However, the doping behaviour of P and B in these QD materials is not well understood. A modified modulation doping model for the doping mechanisms in these materials is discussed which relies on doping of a sub-oxide region around the Si QDs.
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title_short	Si solid-state quantum dot-based materials for tandem solar cells
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Si solid-state quantum dot-based materials for tandem solar cells

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