Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

Abstract X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate dete...
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Autor*in:	Liu, JM [verfasserIn] Liu, XL [verfasserIn] Xu, XQ [verfasserIn] Wang, J [verfasserIn] Li, CM [verfasserIn] Wei, HY [verfasserIn] Yang, SY [verfasserIn] Zhu, QS [verfasserIn] Fan, YM [verfasserIn] Zhang, XW [verfasserIn] Wang, ZG [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2010

Schlagwörter:	Valence band offset w-InN/h-BN heterojunction X-ray photoelectron spectroscopy Conduction band offset

Übergeordnetes Werk:	Enthalten in: Nanoscale research letters - New York, NY [u.a.] : Springer, 2006, 5(2010), 8 vom: 01. Juni
Übergeordnetes Werk:	volume:5 ; year:2010 ; number:8 ; day:01 ; month:06

Links:	Volltext

DOI / URN:	10.1007/s11671-010-9650-x

Katalog-ID:	SPR021761574

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520			\|a Abstract X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.
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allfields	10.1007/s11671-010-9650-x doi (DE-627)SPR021761574 (SPR)s11671-010-9650-x-e DE-627 ger DE-627 rakwb eng 600 ASE Liu, JM verfasserin aut Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices. Valence band offset (dpeaa)DE-He213 w-InN/h-BN heterojunction (dpeaa)DE-He213 X-ray photoelectron spectroscopy (dpeaa)DE-He213 Conduction band offset (dpeaa)DE-He213 Valence band offset (dpeaa)DE-He213 Liu, XL verfasserin aut Xu, XQ verfasserin aut Wang, J verfasserin aut Li, CM verfasserin aut Wei, HY verfasserin aut Yang, SY verfasserin aut Zhu, QS verfasserin aut Fan, YM verfasserin aut Zhang, XW verfasserin aut Wang, ZG verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 5(2010), 8 vom: 01. Juni (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:5 year:2010 number:8 day:01 month:06 https://dx.doi.org/10.1007/s11671-010-9650-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2010 8 01 06
spelling	10.1007/s11671-010-9650-x doi (DE-627)SPR021761574 (SPR)s11671-010-9650-x-e DE-627 ger DE-627 rakwb eng 600 ASE Liu, JM verfasserin aut Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices. Valence band offset (dpeaa)DE-He213 w-InN/h-BN heterojunction (dpeaa)DE-He213 X-ray photoelectron spectroscopy (dpeaa)DE-He213 Conduction band offset (dpeaa)DE-He213 Valence band offset (dpeaa)DE-He213 Liu, XL verfasserin aut Xu, XQ verfasserin aut Wang, J verfasserin aut Li, CM verfasserin aut Wei, HY verfasserin aut Yang, SY verfasserin aut Zhu, QS verfasserin aut Fan, YM verfasserin aut Zhang, XW verfasserin aut Wang, ZG verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 5(2010), 8 vom: 01. Juni (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:5 year:2010 number:8 day:01 month:06 https://dx.doi.org/10.1007/s11671-010-9650-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2010 8 01 06
allfields_unstemmed	10.1007/s11671-010-9650-x doi (DE-627)SPR021761574 (SPR)s11671-010-9650-x-e DE-627 ger DE-627 rakwb eng 600 ASE Liu, JM verfasserin aut Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices. Valence band offset (dpeaa)DE-He213 w-InN/h-BN heterojunction (dpeaa)DE-He213 X-ray photoelectron spectroscopy (dpeaa)DE-He213 Conduction band offset (dpeaa)DE-He213 Valence band offset (dpeaa)DE-He213 Liu, XL verfasserin aut Xu, XQ verfasserin aut Wang, J verfasserin aut Li, CM verfasserin aut Wei, HY verfasserin aut Yang, SY verfasserin aut Zhu, QS verfasserin aut Fan, YM verfasserin aut Zhang, XW verfasserin aut Wang, ZG verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 5(2010), 8 vom: 01. Juni (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:5 year:2010 number:8 day:01 month:06 https://dx.doi.org/10.1007/s11671-010-9650-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2010 8 01 06
allfieldsGer	10.1007/s11671-010-9650-x doi (DE-627)SPR021761574 (SPR)s11671-010-9650-x-e DE-627 ger DE-627 rakwb eng 600 ASE Liu, JM verfasserin aut Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices. Valence band offset (dpeaa)DE-He213 w-InN/h-BN heterojunction (dpeaa)DE-He213 X-ray photoelectron spectroscopy (dpeaa)DE-He213 Conduction band offset (dpeaa)DE-He213 Valence band offset (dpeaa)DE-He213 Liu, XL verfasserin aut Xu, XQ verfasserin aut Wang, J verfasserin aut Li, CM verfasserin aut Wei, HY verfasserin aut Yang, SY verfasserin aut Zhu, QS verfasserin aut Fan, YM verfasserin aut Zhang, XW verfasserin aut Wang, ZG verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 5(2010), 8 vom: 01. Juni (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:5 year:2010 number:8 day:01 month:06 https://dx.doi.org/10.1007/s11671-010-9650-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2010 8 01 06
allfieldsSound	10.1007/s11671-010-9650-x doi (DE-627)SPR021761574 (SPR)s11671-010-9650-x-e DE-627 ger DE-627 rakwb eng 600 ASE Liu, JM verfasserin aut Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices. Valence band offset (dpeaa)DE-He213 w-InN/h-BN heterojunction (dpeaa)DE-He213 X-ray photoelectron spectroscopy (dpeaa)DE-He213 Conduction band offset (dpeaa)DE-He213 Valence band offset (dpeaa)DE-He213 Liu, XL verfasserin aut Xu, XQ verfasserin aut Wang, J verfasserin aut Li, CM verfasserin aut Wei, HY verfasserin aut Yang, SY verfasserin aut Zhu, QS verfasserin aut Fan, YM verfasserin aut Zhang, XW verfasserin aut Wang, ZG verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 5(2010), 8 vom: 01. Juni (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:5 year:2010 number:8 day:01 month:06 https://dx.doi.org/10.1007/s11671-010-9650-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 5 2010 8 01 06
language	English
source	Enthalten in Nanoscale research letters 5(2010), 8 vom: 01. Juni volume:5 year:2010 number:8 day:01 month:06
sourceStr	Enthalten in Nanoscale research letters 5(2010), 8 vom: 01. Juni volume:5 year:2010 number:8 day:01 month:06
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Valence band offset w-InN/h-BN heterojunction X-ray photoelectron spectroscopy Conduction band offset
dewey-raw	600
isfreeaccess_bool	true
container_title	Nanoscale research letters
authorswithroles_txt_mv	Liu, JM @@aut@@ Liu, XL @@aut@@ Xu, XQ @@aut@@ Wang, J @@aut@@ Li, CM @@aut@@ Wei, HY @@aut@@ Yang, SY @@aut@@ Zhu, QS @@aut@@ Fan, YM @@aut@@ Zhang, XW @@aut@@ Wang, ZG @@aut@@
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author	Liu, JM
spellingShingle	Liu, JM ddc 600 misc Valence band offset misc w-InN/h-BN heterojunction misc X-ray photoelectron spectroscopy misc Conduction band offset Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
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topic_title	600 ASE Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy Valence band offset (dpeaa)DE-He213 w-InN/h-BN heterojunction (dpeaa)DE-He213 X-ray photoelectron spectroscopy (dpeaa)DE-He213 Conduction band offset (dpeaa)DE-He213
topic	ddc 600 misc Valence band offset misc w-InN/h-BN heterojunction misc X-ray photoelectron spectroscopy misc Conduction band offset
topic_unstemmed	ddc 600 misc Valence band offset misc w-InN/h-BN heterojunction misc X-ray photoelectron spectroscopy misc Conduction band offset
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title	Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
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title_full	Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
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author_browse	Liu, JM Liu, XL Xu, XQ Wang, J Li, CM Wei, HY Yang, SY Zhu, QS Fan, YM Zhang, XW Wang, ZG
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title_sort	measurement of w-inn/h-bn heterojunction band offsets by x-ray photoemission spectroscopy
title_auth	Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
abstract	Abstract X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.
abstractGer	Abstract X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.
abstract_unstemmed	Abstract X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.
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container_issue	8
title_short	Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
url	https://dx.doi.org/10.1007/s11671-010-9650-x
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author2	Liu, XL Xu, XQ Wang, J Li, CM Wei, HY Yang, SY Zhu, QS Fan, YM Zhang, XW Wang, ZG
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doi_str	10.1007/s11671-010-9650-x
up_date	2024-07-04T00:16:08.350Z
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Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

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