Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells

Abstract The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and direct...
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Autor*in:	Uzum, Abdullah [verfasserIn] Fukatsu, Ken [verfasserIn] Kanda, Hiroyuki [verfasserIn] Kimura, Yutaka [verfasserIn] Tanimoto, Kenji [verfasserIn] Yoshinaga, Seiya [verfasserIn] Jiang, Yunjian [verfasserIn] Ishikawa, Yasuaki [verfasserIn] Uraoka, Yukiharu [verfasserIn] Ito, Seigo [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2014

Schlagwörter:	CZ-Si Spin-coating Phosphorus barrier Sol-gel Silica nanoparticle

Übergeordnetes Werk:	Enthalten in: Nanoscale research letters - New York, NY [u.a.] : Springer, 2006, 9(2014), 1 vom: 05. Dez.
Übergeordnetes Werk:	volume:9 ; year:2014 ; number:1 ; day:05 ; month:12

Links:	Volltext

DOI / URN:	10.1186/1556-276X-9-659

Katalog-ID:	SPR021892024

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520			\|a Abstract The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the $ n^{+} $ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.
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allfields	10.1186/1556-276X-9-659 doi (DE-627)SPR021892024 (SPR)1556-276X-9-659-e DE-627 ger DE-627 rakwb eng 600 ASE Uzum, Abdullah verfasserin aut Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the $ n^{+} $ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion. CZ-Si (dpeaa)DE-He213 Spin-coating (dpeaa)DE-He213 Phosphorus barrier (dpeaa)DE-He213 Sol-gel (dpeaa)DE-He213 Silica nanoparticle (dpeaa)DE-He213 Fukatsu, Ken verfasserin aut Kanda, Hiroyuki verfasserin aut Kimura, Yutaka verfasserin aut Tanimoto, Kenji verfasserin aut Yoshinaga, Seiya verfasserin aut Jiang, Yunjian verfasserin aut Ishikawa, Yasuaki verfasserin aut Uraoka, Yukiharu verfasserin aut Ito, Seigo verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 9(2014), 1 vom: 05. Dez. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:9 year:2014 number:1 day:05 month:12 https://dx.doi.org/10.1186/1556-276X-9-659 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2014 1 05 12
spelling	10.1186/1556-276X-9-659 doi (DE-627)SPR021892024 (SPR)1556-276X-9-659-e DE-627 ger DE-627 rakwb eng 600 ASE Uzum, Abdullah verfasserin aut Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the $ n^{+} $ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion. CZ-Si (dpeaa)DE-He213 Spin-coating (dpeaa)DE-He213 Phosphorus barrier (dpeaa)DE-He213 Sol-gel (dpeaa)DE-He213 Silica nanoparticle (dpeaa)DE-He213 Fukatsu, Ken verfasserin aut Kanda, Hiroyuki verfasserin aut Kimura, Yutaka verfasserin aut Tanimoto, Kenji verfasserin aut Yoshinaga, Seiya verfasserin aut Jiang, Yunjian verfasserin aut Ishikawa, Yasuaki verfasserin aut Uraoka, Yukiharu verfasserin aut Ito, Seigo verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 9(2014), 1 vom: 05. Dez. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:9 year:2014 number:1 day:05 month:12 https://dx.doi.org/10.1186/1556-276X-9-659 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2014 1 05 12
allfields_unstemmed	10.1186/1556-276X-9-659 doi (DE-627)SPR021892024 (SPR)1556-276X-9-659-e DE-627 ger DE-627 rakwb eng 600 ASE Uzum, Abdullah verfasserin aut Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the $ n^{+} $ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion. CZ-Si (dpeaa)DE-He213 Spin-coating (dpeaa)DE-He213 Phosphorus barrier (dpeaa)DE-He213 Sol-gel (dpeaa)DE-He213 Silica nanoparticle (dpeaa)DE-He213 Fukatsu, Ken verfasserin aut Kanda, Hiroyuki verfasserin aut Kimura, Yutaka verfasserin aut Tanimoto, Kenji verfasserin aut Yoshinaga, Seiya verfasserin aut Jiang, Yunjian verfasserin aut Ishikawa, Yasuaki verfasserin aut Uraoka, Yukiharu verfasserin aut Ito, Seigo verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 9(2014), 1 vom: 05. Dez. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:9 year:2014 number:1 day:05 month:12 https://dx.doi.org/10.1186/1556-276X-9-659 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2014 1 05 12
allfieldsGer	10.1186/1556-276X-9-659 doi (DE-627)SPR021892024 (SPR)1556-276X-9-659-e DE-627 ger DE-627 rakwb eng 600 ASE Uzum, Abdullah verfasserin aut Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the $ n^{+} $ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion. CZ-Si (dpeaa)DE-He213 Spin-coating (dpeaa)DE-He213 Phosphorus barrier (dpeaa)DE-He213 Sol-gel (dpeaa)DE-He213 Silica nanoparticle (dpeaa)DE-He213 Fukatsu, Ken verfasserin aut Kanda, Hiroyuki verfasserin aut Kimura, Yutaka verfasserin aut Tanimoto, Kenji verfasserin aut Yoshinaga, Seiya verfasserin aut Jiang, Yunjian verfasserin aut Ishikawa, Yasuaki verfasserin aut Uraoka, Yukiharu verfasserin aut Ito, Seigo verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 9(2014), 1 vom: 05. Dez. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:9 year:2014 number:1 day:05 month:12 https://dx.doi.org/10.1186/1556-276X-9-659 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2014 1 05 12
allfieldsSound	10.1186/1556-276X-9-659 doi (DE-627)SPR021892024 (SPR)1556-276X-9-659-e DE-627 ger DE-627 rakwb eng 600 ASE Uzum, Abdullah verfasserin aut Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the $ n^{+} $ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion. CZ-Si (dpeaa)DE-He213 Spin-coating (dpeaa)DE-He213 Phosphorus barrier (dpeaa)DE-He213 Sol-gel (dpeaa)DE-He213 Silica nanoparticle (dpeaa)DE-He213 Fukatsu, Ken verfasserin aut Kanda, Hiroyuki verfasserin aut Kimura, Yutaka verfasserin aut Tanimoto, Kenji verfasserin aut Yoshinaga, Seiya verfasserin aut Jiang, Yunjian verfasserin aut Ishikawa, Yasuaki verfasserin aut Uraoka, Yukiharu verfasserin aut Ito, Seigo verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 9(2014), 1 vom: 05. Dez. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:9 year:2014 number:1 day:05 month:12 https://dx.doi.org/10.1186/1556-276X-9-659 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2014 1 05 12
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source	Enthalten in Nanoscale research letters 9(2014), 1 vom: 05. Dez. volume:9 year:2014 number:1 day:05 month:12
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topic_facet	CZ-Si Spin-coating Phosphorus barrier Sol-gel Silica nanoparticle
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authorswithroles_txt_mv	Uzum, Abdullah @@aut@@ Fukatsu, Ken @@aut@@ Kanda, Hiroyuki @@aut@@ Kimura, Yutaka @@aut@@ Tanimoto, Kenji @@aut@@ Yoshinaga, Seiya @@aut@@ Jiang, Yunjian @@aut@@ Ishikawa, Yasuaki @@aut@@ Uraoka, Yukiharu @@aut@@ Ito, Seigo @@aut@@
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author	Uzum, Abdullah
spellingShingle	Uzum, Abdullah ddc 600 misc CZ-Si misc Spin-coating misc Phosphorus barrier misc Sol-gel misc Silica nanoparticle Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells
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topic_title	600 ASE Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells CZ-Si (dpeaa)DE-He213 Spin-coating (dpeaa)DE-He213 Phosphorus barrier (dpeaa)DE-He213 Sol-gel (dpeaa)DE-He213 Silica nanoparticle (dpeaa)DE-He213
topic	ddc 600 misc CZ-Si misc Spin-coating misc Phosphorus barrier misc Sol-gel misc Silica nanoparticle
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title	Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells
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title_full	Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells
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author_browse	Uzum, Abdullah Fukatsu, Ken Kanda, Hiroyuki Kimura, Yutaka Tanimoto, Kenji Yoshinaga, Seiya Jiang, Yunjian Ishikawa, Yasuaki Uraoka, Yukiharu Ito, Seigo
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title_sort	silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells
title_auth	Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells
abstract	Abstract The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the $ n^{+} $ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.
abstractGer	Abstract The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the $ n^{+} $ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.
abstract_unstemmed	Abstract The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the $ n^{+} $ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.
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title_short	Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells
url	https://dx.doi.org/10.1186/1556-276X-9-659
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author2	Fukatsu, Ken Kanda, Hiroyuki Kimura, Yutaka Tanimoto, Kenji Yoshinaga, Seiya Jiang, Yunjian Ishikawa, Yasuaki Uraoka, Yukiharu Ito, Seigo
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up_date	2024-07-04T00:54:03.852Z
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The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the $ n^{+} $ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CZ-Si</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Spin-coating</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Phosphorus barrier</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Sol-gel</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silica nanoparticle</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Fukatsu, Ken</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kanda, Hiroyuki</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kimura, Yutaka</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tanimoto, Kenji</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yoshinaga, Seiya</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jiang, Yunjian</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ishikawa, Yasuaki</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Uraoka, Yukiharu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ito, Seigo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Nanoscale research letters</subfield><subfield code="d">New York, NY [u.a.] : Springer, 2006</subfield><subfield code="g">9(2014), 1 vom: 05. 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Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells

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