Plasma-chemical treatment effect observed during the fabrication of AlGaN/GaN devices
Abstract The results obtained when AlGaN/GaN heterostructure surfaces with undoped i-AlGaN and i-GaN upper layers are treated by two types of oxygen plasma created in a two-electrode medium-frequency diode assembly and an electrodeless high-frequency (HF) system and irradiated with an argon ion beam...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Enisherlova, K. L. [verfasserIn] Kulikauskas, V. S. [verfasserIn] Seidman, L. A. [verfasserIn] Pishchagin, V. V. [verfasserIn] Konovalov, A. M. [verfasserIn] Korneev, V. I. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of surface investigation - Moscow : MAIK Nauka/Interperiodics Publ., 2007, 9(2015), 4 vom: Juli, Seite 684-693 |
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| Übergeordnetes Werk: |
volume:9 ; year:2015 ; number:4 ; month:07 ; pages:684-693 |
| Links: |
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| DOI / URN: |
10.1134/S1027451015040084 |
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| Katalog-ID: |
SPR021907102 |
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| 520 | |a Abstract The results obtained when AlGaN/GaN heterostructure surfaces with undoped i-AlGaN and i-GaN upper layers are treated by two types of oxygen plasma created in a two-electrode medium-frequency diode assembly and an electrodeless high-frequency (HF) system and irradiated with an argon ion beam are analyzed. The studies are performed using Rutherford backscattering spectroscopy, and changes in the structural parameters are estimated by means of the HF capacitance-voltage characteristic method. It is demonstrated that nanoregions (10–20 Å) of the initial i-AlGaN and i-GaN surface layers have different degrees of crystalline-structure ordering, in particular, i-AlGaN layers, which contain a large number of displaced Ga and Al atoms and, what is most important, nitrogen and oxygen atoms. This leads to an increase in the concentration of donor-like surface traps. A purely chemical interaction between ions and the surface can occur depending on the oxygen-plasma treatment modes; moreover, the chemical cleaning process can be accompanied by the impact action of ions on the surface. It is shown that structures with dissimilar surface layers respond differently to plasma treatment. The greatest change in the state of surface nanolayers is observed upon argon-ion bombardment. The analyzed electrical characteristics of test samples indicate that argon-ion treatment performed immediately before metallization makes it possible to create lower-resistance ohmic contacts and Schottky barriers with the smallest leakage currents. | ||
| 650 | 4 | |a plasma-chemical treatment |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Rutherford backscattering |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a AlGaN/GaN heterostructures |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a oxygen plasma |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a argon-ion beams |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a - |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a characteristics |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a surface states |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Kulikauskas, V. S. |e verfasserin |4 aut | |
| 700 | 1 | |a Seidman, L. A. |e verfasserin |4 aut | |
| 700 | 1 | |a Pishchagin, V. V. |e verfasserin |4 aut | |
| 700 | 1 | |a Konovalov, A. M. |e verfasserin |4 aut | |
| 700 | 1 | |a Korneev, V. I. |e verfasserin |4 aut | |
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10.1134/S1027451015040084 doi (DE-627)SPR021907102 (SPR)S1027451015040084-e DE-627 ger DE-627 rakwb eng 530 540 ASE 33.68 bkl 51.30 bkl Enisherlova, K. L. verfasserin aut Plasma-chemical treatment effect observed during the fabrication of AlGaN/GaN devices 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The results obtained when AlGaN/GaN heterostructure surfaces with undoped i-AlGaN and i-GaN upper layers are treated by two types of oxygen plasma created in a two-electrode medium-frequency diode assembly and an electrodeless high-frequency (HF) system and irradiated with an argon ion beam are analyzed. The studies are performed using Rutherford backscattering spectroscopy, and changes in the structural parameters are estimated by means of the HF capacitance-voltage characteristic method. It is demonstrated that nanoregions (10–20 Å) of the initial i-AlGaN and i-GaN surface layers have different degrees of crystalline-structure ordering, in particular, i-AlGaN layers, which contain a large number of displaced Ga and Al atoms and, what is most important, nitrogen and oxygen atoms. This leads to an increase in the concentration of donor-like surface traps. A purely chemical interaction between ions and the surface can occur depending on the oxygen-plasma treatment modes; moreover, the chemical cleaning process can be accompanied by the impact action of ions on the surface. It is shown that structures with dissimilar surface layers respond differently to plasma treatment. The greatest change in the state of surface nanolayers is observed upon argon-ion bombardment. The analyzed electrical characteristics of test samples indicate that argon-ion treatment performed immediately before metallization makes it possible to create lower-resistance ohmic contacts and Schottky barriers with the smallest leakage currents. plasma-chemical treatment (dpeaa)DE-He213 Rutherford backscattering (dpeaa)DE-He213 AlGaN/GaN heterostructures (dpeaa)DE-He213 oxygen plasma (dpeaa)DE-He213 argon-ion beams (dpeaa)DE-He213 - (dpeaa)DE-He213 characteristics (dpeaa)DE-He213 surface states (dpeaa)DE-He213 Kulikauskas, V. S. verfasserin aut Seidman, L. A. verfasserin aut Pishchagin, V. V. verfasserin aut Konovalov, A. M. verfasserin aut Korneev, V. I. verfasserin aut Enthalten in Journal of surface investigation Moscow : MAIK Nauka/Interperiodics Publ., 2007 9(2015), 4 vom: Juli, Seite 684-693 (DE-627)546007252 (DE-600)2389417-9 1819-7094 nnns volume:9 year:2015 number:4 month:07 pages:684-693 https://dx.doi.org/10.1134/S1027451015040084 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 ASE 51.30 ASE AR 9 2015 4 07 684-693 |
| spelling |
10.1134/S1027451015040084 doi (DE-627)SPR021907102 (SPR)S1027451015040084-e DE-627 ger DE-627 rakwb eng 530 540 ASE 33.68 bkl 51.30 bkl Enisherlova, K. L. verfasserin aut Plasma-chemical treatment effect observed during the fabrication of AlGaN/GaN devices 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The results obtained when AlGaN/GaN heterostructure surfaces with undoped i-AlGaN and i-GaN upper layers are treated by two types of oxygen plasma created in a two-electrode medium-frequency diode assembly and an electrodeless high-frequency (HF) system and irradiated with an argon ion beam are analyzed. The studies are performed using Rutherford backscattering spectroscopy, and changes in the structural parameters are estimated by means of the HF capacitance-voltage characteristic method. It is demonstrated that nanoregions (10–20 Å) of the initial i-AlGaN and i-GaN surface layers have different degrees of crystalline-structure ordering, in particular, i-AlGaN layers, which contain a large number of displaced Ga and Al atoms and, what is most important, nitrogen and oxygen atoms. This leads to an increase in the concentration of donor-like surface traps. A purely chemical interaction between ions and the surface can occur depending on the oxygen-plasma treatment modes; moreover, the chemical cleaning process can be accompanied by the impact action of ions on the surface. It is shown that structures with dissimilar surface layers respond differently to plasma treatment. The greatest change in the state of surface nanolayers is observed upon argon-ion bombardment. The analyzed electrical characteristics of test samples indicate that argon-ion treatment performed immediately before metallization makes it possible to create lower-resistance ohmic contacts and Schottky barriers with the smallest leakage currents. plasma-chemical treatment (dpeaa)DE-He213 Rutherford backscattering (dpeaa)DE-He213 AlGaN/GaN heterostructures (dpeaa)DE-He213 oxygen plasma (dpeaa)DE-He213 argon-ion beams (dpeaa)DE-He213 - (dpeaa)DE-He213 characteristics (dpeaa)DE-He213 surface states (dpeaa)DE-He213 Kulikauskas, V. S. verfasserin aut Seidman, L. A. verfasserin aut Pishchagin, V. V. verfasserin aut Konovalov, A. M. verfasserin aut Korneev, V. I. verfasserin aut Enthalten in Journal of surface investigation Moscow : MAIK Nauka/Interperiodics Publ., 2007 9(2015), 4 vom: Juli, Seite 684-693 (DE-627)546007252 (DE-600)2389417-9 1819-7094 nnns volume:9 year:2015 number:4 month:07 pages:684-693 https://dx.doi.org/10.1134/S1027451015040084 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 ASE 51.30 ASE AR 9 2015 4 07 684-693 |
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10.1134/S1027451015040084 doi (DE-627)SPR021907102 (SPR)S1027451015040084-e DE-627 ger DE-627 rakwb eng 530 540 ASE 33.68 bkl 51.30 bkl Enisherlova, K. L. verfasserin aut Plasma-chemical treatment effect observed during the fabrication of AlGaN/GaN devices 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The results obtained when AlGaN/GaN heterostructure surfaces with undoped i-AlGaN and i-GaN upper layers are treated by two types of oxygen plasma created in a two-electrode medium-frequency diode assembly and an electrodeless high-frequency (HF) system and irradiated with an argon ion beam are analyzed. The studies are performed using Rutherford backscattering spectroscopy, and changes in the structural parameters are estimated by means of the HF capacitance-voltage characteristic method. It is demonstrated that nanoregions (10–20 Å) of the initial i-AlGaN and i-GaN surface layers have different degrees of crystalline-structure ordering, in particular, i-AlGaN layers, which contain a large number of displaced Ga and Al atoms and, what is most important, nitrogen and oxygen atoms. This leads to an increase in the concentration of donor-like surface traps. A purely chemical interaction between ions and the surface can occur depending on the oxygen-plasma treatment modes; moreover, the chemical cleaning process can be accompanied by the impact action of ions on the surface. It is shown that structures with dissimilar surface layers respond differently to plasma treatment. The greatest change in the state of surface nanolayers is observed upon argon-ion bombardment. The analyzed electrical characteristics of test samples indicate that argon-ion treatment performed immediately before metallization makes it possible to create lower-resistance ohmic contacts and Schottky barriers with the smallest leakage currents. plasma-chemical treatment (dpeaa)DE-He213 Rutherford backscattering (dpeaa)DE-He213 AlGaN/GaN heterostructures (dpeaa)DE-He213 oxygen plasma (dpeaa)DE-He213 argon-ion beams (dpeaa)DE-He213 - (dpeaa)DE-He213 characteristics (dpeaa)DE-He213 surface states (dpeaa)DE-He213 Kulikauskas, V. S. verfasserin aut Seidman, L. A. verfasserin aut Pishchagin, V. V. verfasserin aut Konovalov, A. M. verfasserin aut Korneev, V. I. verfasserin aut Enthalten in Journal of surface investigation Moscow : MAIK Nauka/Interperiodics Publ., 2007 9(2015), 4 vom: Juli, Seite 684-693 (DE-627)546007252 (DE-600)2389417-9 1819-7094 nnns volume:9 year:2015 number:4 month:07 pages:684-693 https://dx.doi.org/10.1134/S1027451015040084 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 ASE 51.30 ASE AR 9 2015 4 07 684-693 |
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10.1134/S1027451015040084 doi (DE-627)SPR021907102 (SPR)S1027451015040084-e DE-627 ger DE-627 rakwb eng 530 540 ASE 33.68 bkl 51.30 bkl Enisherlova, K. L. verfasserin aut Plasma-chemical treatment effect observed during the fabrication of AlGaN/GaN devices 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The results obtained when AlGaN/GaN heterostructure surfaces with undoped i-AlGaN and i-GaN upper layers are treated by two types of oxygen plasma created in a two-electrode medium-frequency diode assembly and an electrodeless high-frequency (HF) system and irradiated with an argon ion beam are analyzed. The studies are performed using Rutherford backscattering spectroscopy, and changes in the structural parameters are estimated by means of the HF capacitance-voltage characteristic method. It is demonstrated that nanoregions (10–20 Å) of the initial i-AlGaN and i-GaN surface layers have different degrees of crystalline-structure ordering, in particular, i-AlGaN layers, which contain a large number of displaced Ga and Al atoms and, what is most important, nitrogen and oxygen atoms. This leads to an increase in the concentration of donor-like surface traps. A purely chemical interaction between ions and the surface can occur depending on the oxygen-plasma treatment modes; moreover, the chemical cleaning process can be accompanied by the impact action of ions on the surface. It is shown that structures with dissimilar surface layers respond differently to plasma treatment. The greatest change in the state of surface nanolayers is observed upon argon-ion bombardment. The analyzed electrical characteristics of test samples indicate that argon-ion treatment performed immediately before metallization makes it possible to create lower-resistance ohmic contacts and Schottky barriers with the smallest leakage currents. plasma-chemical treatment (dpeaa)DE-He213 Rutherford backscattering (dpeaa)DE-He213 AlGaN/GaN heterostructures (dpeaa)DE-He213 oxygen plasma (dpeaa)DE-He213 argon-ion beams (dpeaa)DE-He213 - (dpeaa)DE-He213 characteristics (dpeaa)DE-He213 surface states (dpeaa)DE-He213 Kulikauskas, V. S. verfasserin aut Seidman, L. A. verfasserin aut Pishchagin, V. V. verfasserin aut Konovalov, A. M. verfasserin aut Korneev, V. I. verfasserin aut Enthalten in Journal of surface investigation Moscow : MAIK Nauka/Interperiodics Publ., 2007 9(2015), 4 vom: Juli, Seite 684-693 (DE-627)546007252 (DE-600)2389417-9 1819-7094 nnns volume:9 year:2015 number:4 month:07 pages:684-693 https://dx.doi.org/10.1134/S1027451015040084 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 ASE 51.30 ASE AR 9 2015 4 07 684-693 |
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10.1134/S1027451015040084 doi (DE-627)SPR021907102 (SPR)S1027451015040084-e DE-627 ger DE-627 rakwb eng 530 540 ASE 33.68 bkl 51.30 bkl Enisherlova, K. L. verfasserin aut Plasma-chemical treatment effect observed during the fabrication of AlGaN/GaN devices 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The results obtained when AlGaN/GaN heterostructure surfaces with undoped i-AlGaN and i-GaN upper layers are treated by two types of oxygen plasma created in a two-electrode medium-frequency diode assembly and an electrodeless high-frequency (HF) system and irradiated with an argon ion beam are analyzed. The studies are performed using Rutherford backscattering spectroscopy, and changes in the structural parameters are estimated by means of the HF capacitance-voltage characteristic method. It is demonstrated that nanoregions (10–20 Å) of the initial i-AlGaN and i-GaN surface layers have different degrees of crystalline-structure ordering, in particular, i-AlGaN layers, which contain a large number of displaced Ga and Al atoms and, what is most important, nitrogen and oxygen atoms. This leads to an increase in the concentration of donor-like surface traps. A purely chemical interaction between ions and the surface can occur depending on the oxygen-plasma treatment modes; moreover, the chemical cleaning process can be accompanied by the impact action of ions on the surface. It is shown that structures with dissimilar surface layers respond differently to plasma treatment. The greatest change in the state of surface nanolayers is observed upon argon-ion bombardment. The analyzed electrical characteristics of test samples indicate that argon-ion treatment performed immediately before metallization makes it possible to create lower-resistance ohmic contacts and Schottky barriers with the smallest leakage currents. plasma-chemical treatment (dpeaa)DE-He213 Rutherford backscattering (dpeaa)DE-He213 AlGaN/GaN heterostructures (dpeaa)DE-He213 oxygen plasma (dpeaa)DE-He213 argon-ion beams (dpeaa)DE-He213 - (dpeaa)DE-He213 characteristics (dpeaa)DE-He213 surface states (dpeaa)DE-He213 Kulikauskas, V. S. verfasserin aut Seidman, L. A. verfasserin aut Pishchagin, V. V. verfasserin aut Konovalov, A. M. verfasserin aut Korneev, V. I. verfasserin aut Enthalten in Journal of surface investigation Moscow : MAIK Nauka/Interperiodics Publ., 2007 9(2015), 4 vom: Juli, Seite 684-693 (DE-627)546007252 (DE-600)2389417-9 1819-7094 nnns volume:9 year:2015 number:4 month:07 pages:684-693 https://dx.doi.org/10.1134/S1027451015040084 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 ASE 51.30 ASE AR 9 2015 4 07 684-693 |
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Enthalten in Journal of surface investigation 9(2015), 4 vom: Juli, Seite 684-693 volume:9 year:2015 number:4 month:07 pages:684-693 |
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Enisherlova, K. L. @@aut@@ Kulikauskas, V. S. @@aut@@ Seidman, L. A. @@aut@@ Pishchagin, V. V. @@aut@@ Konovalov, A. M. @@aut@@ Korneev, V. I. @@aut@@ |
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L.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Plasma-chemical treatment effect observed during the fabrication of AlGaN/GaN devices</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The results obtained when AlGaN/GaN heterostructure surfaces with undoped i-AlGaN and i-GaN upper layers are treated by two types of oxygen plasma created in a two-electrode medium-frequency diode assembly and an electrodeless high-frequency (HF) system and irradiated with an argon ion beam are analyzed. The studies are performed using Rutherford backscattering spectroscopy, and changes in the structural parameters are estimated by means of the HF capacitance-voltage characteristic method. It is demonstrated that nanoregions (10–20 Å) of the initial i-AlGaN and i-GaN surface layers have different degrees of crystalline-structure ordering, in particular, i-AlGaN layers, which contain a large number of displaced Ga and Al atoms and, what is most important, nitrogen and oxygen atoms. This leads to an increase in the concentration of donor-like surface traps. A purely chemical interaction between ions and the surface can occur depending on the oxygen-plasma treatment modes; moreover, the chemical cleaning process can be accompanied by the impact action of ions on the surface. It is shown that structures with dissimilar surface layers respond differently to plasma treatment. The greatest change in the state of surface nanolayers is observed upon argon-ion bombardment. The analyzed electrical characteristics of test samples indicate that argon-ion treatment performed immediately before metallization makes it possible to create lower-resistance ohmic contacts and Schottky barriers with the smallest leakage currents.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">plasma-chemical treatment</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Rutherford backscattering</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">AlGaN/GaN heterostructures</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">oxygen plasma</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">argon-ion beams</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">-</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">characteristics</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">surface states</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kulikauskas, V. 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Enisherlova, K. L. |
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Enisherlova, K. L. ddc 530 bkl 33.68 bkl 51.30 misc plasma-chemical treatment misc Rutherford backscattering misc AlGaN/GaN heterostructures misc oxygen plasma misc argon-ion beams misc - misc characteristics misc surface states Plasma-chemical treatment effect observed during the fabrication of AlGaN/GaN devices |
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530 540 ASE 33.68 bkl 51.30 bkl Plasma-chemical treatment effect observed during the fabrication of AlGaN/GaN devices plasma-chemical treatment (dpeaa)DE-He213 Rutherford backscattering (dpeaa)DE-He213 AlGaN/GaN heterostructures (dpeaa)DE-He213 oxygen plasma (dpeaa)DE-He213 argon-ion beams (dpeaa)DE-He213 - (dpeaa)DE-He213 characteristics (dpeaa)DE-He213 surface states (dpeaa)DE-He213 |
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ddc 530 bkl 33.68 bkl 51.30 misc plasma-chemical treatment misc Rutherford backscattering misc AlGaN/GaN heterostructures misc oxygen plasma misc argon-ion beams misc - misc characteristics misc surface states |
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ddc 530 bkl 33.68 bkl 51.30 misc plasma-chemical treatment misc Rutherford backscattering misc AlGaN/GaN heterostructures misc oxygen plasma misc argon-ion beams misc - misc characteristics misc surface states |
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Plasma-chemical treatment effect observed during the fabrication of AlGaN/GaN devices |
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Plasma-chemical treatment effect observed during the fabrication of AlGaN/GaN devices |
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Enisherlova, K. L. |
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Journal of surface investigation |
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Journal of surface investigation |
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Enisherlova, K. L. Kulikauskas, V. S. Seidman, L. A. Pishchagin, V. V. Konovalov, A. M. Korneev, V. I. |
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Elektronische Aufsätze |
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Enisherlova, K. L. |
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10.1134/S1027451015040084 |
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530 540 |
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verfasserin |
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plasma-chemical treatment effect observed during the fabrication of algan/gan devices |
| title_auth |
Plasma-chemical treatment effect observed during the fabrication of AlGaN/GaN devices |
| abstract |
Abstract The results obtained when AlGaN/GaN heterostructure surfaces with undoped i-AlGaN and i-GaN upper layers are treated by two types of oxygen plasma created in a two-electrode medium-frequency diode assembly and an electrodeless high-frequency (HF) system and irradiated with an argon ion beam are analyzed. The studies are performed using Rutherford backscattering spectroscopy, and changes in the structural parameters are estimated by means of the HF capacitance-voltage characteristic method. It is demonstrated that nanoregions (10–20 Å) of the initial i-AlGaN and i-GaN surface layers have different degrees of crystalline-structure ordering, in particular, i-AlGaN layers, which contain a large number of displaced Ga and Al atoms and, what is most important, nitrogen and oxygen atoms. This leads to an increase in the concentration of donor-like surface traps. A purely chemical interaction between ions and the surface can occur depending on the oxygen-plasma treatment modes; moreover, the chemical cleaning process can be accompanied by the impact action of ions on the surface. It is shown that structures with dissimilar surface layers respond differently to plasma treatment. The greatest change in the state of surface nanolayers is observed upon argon-ion bombardment. The analyzed electrical characteristics of test samples indicate that argon-ion treatment performed immediately before metallization makes it possible to create lower-resistance ohmic contacts and Schottky barriers with the smallest leakage currents. |
| abstractGer |
Abstract The results obtained when AlGaN/GaN heterostructure surfaces with undoped i-AlGaN and i-GaN upper layers are treated by two types of oxygen plasma created in a two-electrode medium-frequency diode assembly and an electrodeless high-frequency (HF) system and irradiated with an argon ion beam are analyzed. The studies are performed using Rutherford backscattering spectroscopy, and changes in the structural parameters are estimated by means of the HF capacitance-voltage characteristic method. It is demonstrated that nanoregions (10–20 Å) of the initial i-AlGaN and i-GaN surface layers have different degrees of crystalline-structure ordering, in particular, i-AlGaN layers, which contain a large number of displaced Ga and Al atoms and, what is most important, nitrogen and oxygen atoms. This leads to an increase in the concentration of donor-like surface traps. A purely chemical interaction between ions and the surface can occur depending on the oxygen-plasma treatment modes; moreover, the chemical cleaning process can be accompanied by the impact action of ions on the surface. It is shown that structures with dissimilar surface layers respond differently to plasma treatment. The greatest change in the state of surface nanolayers is observed upon argon-ion bombardment. The analyzed electrical characteristics of test samples indicate that argon-ion treatment performed immediately before metallization makes it possible to create lower-resistance ohmic contacts and Schottky barriers with the smallest leakage currents. |
| abstract_unstemmed |
Abstract The results obtained when AlGaN/GaN heterostructure surfaces with undoped i-AlGaN and i-GaN upper layers are treated by two types of oxygen plasma created in a two-electrode medium-frequency diode assembly and an electrodeless high-frequency (HF) system and irradiated with an argon ion beam are analyzed. The studies are performed using Rutherford backscattering spectroscopy, and changes in the structural parameters are estimated by means of the HF capacitance-voltage characteristic method. It is demonstrated that nanoregions (10–20 Å) of the initial i-AlGaN and i-GaN surface layers have different degrees of crystalline-structure ordering, in particular, i-AlGaN layers, which contain a large number of displaced Ga and Al atoms and, what is most important, nitrogen and oxygen atoms. This leads to an increase in the concentration of donor-like surface traps. A purely chemical interaction between ions and the surface can occur depending on the oxygen-plasma treatment modes; moreover, the chemical cleaning process can be accompanied by the impact action of ions on the surface. It is shown that structures with dissimilar surface layers respond differently to plasma treatment. The greatest change in the state of surface nanolayers is observed upon argon-ion bombardment. The analyzed electrical characteristics of test samples indicate that argon-ion treatment performed immediately before metallization makes it possible to create lower-resistance ohmic contacts and Schottky barriers with the smallest leakage currents. |
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4 |
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Plasma-chemical treatment effect observed during the fabrication of AlGaN/GaN devices |
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https://dx.doi.org/10.1134/S1027451015040084 |
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Kulikauskas, V. S. Seidman, L. A. Pishchagin, V. V. Konovalov, A. M. Korneev, V. I. |
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Kulikauskas, V. S. Seidman, L. A. Pishchagin, V. V. Konovalov, A. M. Korneev, V. I. |
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| score |
7.399913 |