PLD Grown SiC Thin Films on $ Al_{2} %$ O_{3} $: Morphology and Structure
Abstract In this paper, submicron SiC thin films are obtained on α-$ Al_{2} %$ O_{3} $ (0001) substrates from a ceramic target in vacuum by means of pulsed laser deposition. The influence of the substrate temperature on the composition, structure and surface morphology of the experimental samples is...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Kargin, N. I. [verfasserIn] Gusev, A. S. [verfasserIn] Ryndya, S. M. [verfasserIn] Timofeev, A. A. [verfasserIn] Grekhov, M. M. [verfasserIn] Siglovaya, N. V. [verfasserIn] Antonenko, S. V. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of surface investigation - Moscow : MAIK Nauka/Interperiodics Publ., 2007, 13(2019), 2 vom: März, Seite 232-239 |
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| Übergeordnetes Werk: |
volume:13 ; year:2019 ; number:2 ; month:03 ; pages:232-239 |
| Links: |
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| DOI / URN: |
10.1134/S1027451019020101 |
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| Katalog-ID: |
SPR021915784 |
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| 520 | |a Abstract In this paper, submicron SiC thin films are obtained on α-$ Al_{2} %$ O_{3} $ (0001) substrates from a ceramic target in vacuum by means of pulsed laser deposition. The influence of the substrate temperature on the composition, structure and surface morphology of the experimental samples is studied using scanning and transmission electron microscopy, scanning probe microscopy, X-ray diffractometry, Fourier transform infrared spectroscopy and Raman spectrometry. It is shown that at Tsub = 1000°C the heteroepitaxial growth of 3C-SiC is observed with the following preferential orientation with respect to the substrate: [%$0001%$]$ Al_{2} %$ O_{3} $||[111]SiС and [%$2\bar {1}\bar {1}0%$]$ Al_{2} %$ O_{3} $||[%$2\bar {1}\bar {1}%$]SiС, [%$1\bar {1}00%$]$ Al_{2} %$ O_{3} $||[%$1\bar {1}0%$]SiС. The shape of the reflections from the {011} and {131} 3C–SiC planes on the electron diffraction pattern indicates the presence of local regions in the film that are rotated at angles of up to 7.5° around the growth axis. Thus, it is found that the 3C–SiC film obtained on α‑$ Al_{2} %$ O_{3} $ at a substrate temperature of 1000°C has a mosaic structure partially compensating for the mechanical stresses arising from a mismatch between the lattice parameters and thermal-expansion coefficients along the basal plane. | ||
| 700 | 1 | |a Gusev, A. S. |e verfasserin |4 aut | |
| 700 | 1 | |a Ryndya, S. M. |e verfasserin |4 aut | |
| 700 | 1 | |a Timofeev, A. A. |e verfasserin |4 aut | |
| 700 | 1 | |a Grekhov, M. M. |e verfasserin |4 aut | |
| 700 | 1 | |a Siglovaya, N. V. |e verfasserin |4 aut | |
| 700 | 1 | |a Antonenko, S. V. |e verfasserin |4 aut | |
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| 773 | 1 | 8 | |g volume:13 |g year:2019 |g number:2 |g month:03 |g pages:232-239 |
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10.1134/S1027451019020101 doi (DE-627)SPR021915784 (SPR)S1027451019020101-e DE-627 ger DE-627 rakwb eng 530 540 ASE 33.68 bkl 51.30 bkl Kargin, N. I. verfasserin aut PLD Grown SiC Thin Films on $ Al_{2} %$ O_{3} $: Morphology and Structure 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, submicron SiC thin films are obtained on α-$ Al_{2} %$ O_{3} $ (0001) substrates from a ceramic target in vacuum by means of pulsed laser deposition. The influence of the substrate temperature on the composition, structure and surface morphology of the experimental samples is studied using scanning and transmission electron microscopy, scanning probe microscopy, X-ray diffractometry, Fourier transform infrared spectroscopy and Raman spectrometry. It is shown that at Tsub = 1000°C the heteroepitaxial growth of 3C-SiC is observed with the following preferential orientation with respect to the substrate: [%$0001%$]$ Al_{2} %$ O_{3} $||[111]SiС and [%$2\bar {1}\bar {1}0%$]$ Al_{2} %$ O_{3} $||[%$2\bar {1}\bar {1}%$]SiС, [%$1\bar {1}00%$]$ Al_{2} %$ O_{3} $||[%$1\bar {1}0%$]SiС. The shape of the reflections from the {011} and {131} 3C–SiC planes on the electron diffraction pattern indicates the presence of local regions in the film that are rotated at angles of up to 7.5° around the growth axis. Thus, it is found that the 3C–SiC film obtained on α‑$ Al_{2} %$ O_{3} $ at a substrate temperature of 1000°C has a mosaic structure partially compensating for the mechanical stresses arising from a mismatch between the lattice parameters and thermal-expansion coefficients along the basal plane. Gusev, A. S. verfasserin aut Ryndya, S. M. verfasserin aut Timofeev, A. A. verfasserin aut Grekhov, M. M. verfasserin aut Siglovaya, N. V. verfasserin aut Antonenko, S. V. verfasserin aut Enthalten in Journal of surface investigation Moscow : MAIK Nauka/Interperiodics Publ., 2007 13(2019), 2 vom: März, Seite 232-239 (DE-627)546007252 (DE-600)2389417-9 1819-7094 nnns volume:13 year:2019 number:2 month:03 pages:232-239 https://dx.doi.org/10.1134/S1027451019020101 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 ASE 51.30 ASE AR 13 2019 2 03 232-239 |
| spelling |
10.1134/S1027451019020101 doi (DE-627)SPR021915784 (SPR)S1027451019020101-e DE-627 ger DE-627 rakwb eng 530 540 ASE 33.68 bkl 51.30 bkl Kargin, N. I. verfasserin aut PLD Grown SiC Thin Films on $ Al_{2} %$ O_{3} $: Morphology and Structure 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, submicron SiC thin films are obtained on α-$ Al_{2} %$ O_{3} $ (0001) substrates from a ceramic target in vacuum by means of pulsed laser deposition. The influence of the substrate temperature on the composition, structure and surface morphology of the experimental samples is studied using scanning and transmission electron microscopy, scanning probe microscopy, X-ray diffractometry, Fourier transform infrared spectroscopy and Raman spectrometry. It is shown that at Tsub = 1000°C the heteroepitaxial growth of 3C-SiC is observed with the following preferential orientation with respect to the substrate: [%$0001%$]$ Al_{2} %$ O_{3} $||[111]SiС and [%$2\bar {1}\bar {1}0%$]$ Al_{2} %$ O_{3} $||[%$2\bar {1}\bar {1}%$]SiС, [%$1\bar {1}00%$]$ Al_{2} %$ O_{3} $||[%$1\bar {1}0%$]SiС. The shape of the reflections from the {011} and {131} 3C–SiC planes on the electron diffraction pattern indicates the presence of local regions in the film that are rotated at angles of up to 7.5° around the growth axis. Thus, it is found that the 3C–SiC film obtained on α‑$ Al_{2} %$ O_{3} $ at a substrate temperature of 1000°C has a mosaic structure partially compensating for the mechanical stresses arising from a mismatch between the lattice parameters and thermal-expansion coefficients along the basal plane. Gusev, A. S. verfasserin aut Ryndya, S. M. verfasserin aut Timofeev, A. A. verfasserin aut Grekhov, M. M. verfasserin aut Siglovaya, N. V. verfasserin aut Antonenko, S. V. verfasserin aut Enthalten in Journal of surface investigation Moscow : MAIK Nauka/Interperiodics Publ., 2007 13(2019), 2 vom: März, Seite 232-239 (DE-627)546007252 (DE-600)2389417-9 1819-7094 nnns volume:13 year:2019 number:2 month:03 pages:232-239 https://dx.doi.org/10.1134/S1027451019020101 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 ASE 51.30 ASE AR 13 2019 2 03 232-239 |
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10.1134/S1027451019020101 doi (DE-627)SPR021915784 (SPR)S1027451019020101-e DE-627 ger DE-627 rakwb eng 530 540 ASE 33.68 bkl 51.30 bkl Kargin, N. I. verfasserin aut PLD Grown SiC Thin Films on $ Al_{2} %$ O_{3} $: Morphology and Structure 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, submicron SiC thin films are obtained on α-$ Al_{2} %$ O_{3} $ (0001) substrates from a ceramic target in vacuum by means of pulsed laser deposition. The influence of the substrate temperature on the composition, structure and surface morphology of the experimental samples is studied using scanning and transmission electron microscopy, scanning probe microscopy, X-ray diffractometry, Fourier transform infrared spectroscopy and Raman spectrometry. It is shown that at Tsub = 1000°C the heteroepitaxial growth of 3C-SiC is observed with the following preferential orientation with respect to the substrate: [%$0001%$]$ Al_{2} %$ O_{3} $||[111]SiС and [%$2\bar {1}\bar {1}0%$]$ Al_{2} %$ O_{3} $||[%$2\bar {1}\bar {1}%$]SiС, [%$1\bar {1}00%$]$ Al_{2} %$ O_{3} $||[%$1\bar {1}0%$]SiС. The shape of the reflections from the {011} and {131} 3C–SiC planes on the electron diffraction pattern indicates the presence of local regions in the film that are rotated at angles of up to 7.5° around the growth axis. Thus, it is found that the 3C–SiC film obtained on α‑$ Al_{2} %$ O_{3} $ at a substrate temperature of 1000°C has a mosaic structure partially compensating for the mechanical stresses arising from a mismatch between the lattice parameters and thermal-expansion coefficients along the basal plane. Gusev, A. S. verfasserin aut Ryndya, S. M. verfasserin aut Timofeev, A. A. verfasserin aut Grekhov, M. M. verfasserin aut Siglovaya, N. V. verfasserin aut Antonenko, S. V. verfasserin aut Enthalten in Journal of surface investigation Moscow : MAIK Nauka/Interperiodics Publ., 2007 13(2019), 2 vom: März, Seite 232-239 (DE-627)546007252 (DE-600)2389417-9 1819-7094 nnns volume:13 year:2019 number:2 month:03 pages:232-239 https://dx.doi.org/10.1134/S1027451019020101 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 ASE 51.30 ASE AR 13 2019 2 03 232-239 |
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10.1134/S1027451019020101 doi (DE-627)SPR021915784 (SPR)S1027451019020101-e DE-627 ger DE-627 rakwb eng 530 540 ASE 33.68 bkl 51.30 bkl Kargin, N. I. verfasserin aut PLD Grown SiC Thin Films on $ Al_{2} %$ O_{3} $: Morphology and Structure 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, submicron SiC thin films are obtained on α-$ Al_{2} %$ O_{3} $ (0001) substrates from a ceramic target in vacuum by means of pulsed laser deposition. The influence of the substrate temperature on the composition, structure and surface morphology of the experimental samples is studied using scanning and transmission electron microscopy, scanning probe microscopy, X-ray diffractometry, Fourier transform infrared spectroscopy and Raman spectrometry. It is shown that at Tsub = 1000°C the heteroepitaxial growth of 3C-SiC is observed with the following preferential orientation with respect to the substrate: [%$0001%$]$ Al_{2} %$ O_{3} $||[111]SiС and [%$2\bar {1}\bar {1}0%$]$ Al_{2} %$ O_{3} $||[%$2\bar {1}\bar {1}%$]SiС, [%$1\bar {1}00%$]$ Al_{2} %$ O_{3} $||[%$1\bar {1}0%$]SiС. The shape of the reflections from the {011} and {131} 3C–SiC planes on the electron diffraction pattern indicates the presence of local regions in the film that are rotated at angles of up to 7.5° around the growth axis. Thus, it is found that the 3C–SiC film obtained on α‑$ Al_{2} %$ O_{3} $ at a substrate temperature of 1000°C has a mosaic structure partially compensating for the mechanical stresses arising from a mismatch between the lattice parameters and thermal-expansion coefficients along the basal plane. Gusev, A. S. verfasserin aut Ryndya, S. M. verfasserin aut Timofeev, A. A. verfasserin aut Grekhov, M. M. verfasserin aut Siglovaya, N. V. verfasserin aut Antonenko, S. V. verfasserin aut Enthalten in Journal of surface investigation Moscow : MAIK Nauka/Interperiodics Publ., 2007 13(2019), 2 vom: März, Seite 232-239 (DE-627)546007252 (DE-600)2389417-9 1819-7094 nnns volume:13 year:2019 number:2 month:03 pages:232-239 https://dx.doi.org/10.1134/S1027451019020101 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 ASE 51.30 ASE AR 13 2019 2 03 232-239 |
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10.1134/S1027451019020101 doi (DE-627)SPR021915784 (SPR)S1027451019020101-e DE-627 ger DE-627 rakwb eng 530 540 ASE 33.68 bkl 51.30 bkl Kargin, N. I. verfasserin aut PLD Grown SiC Thin Films on $ Al_{2} %$ O_{3} $: Morphology and Structure 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, submicron SiC thin films are obtained on α-$ Al_{2} %$ O_{3} $ (0001) substrates from a ceramic target in vacuum by means of pulsed laser deposition. The influence of the substrate temperature on the composition, structure and surface morphology of the experimental samples is studied using scanning and transmission electron microscopy, scanning probe microscopy, X-ray diffractometry, Fourier transform infrared spectroscopy and Raman spectrometry. It is shown that at Tsub = 1000°C the heteroepitaxial growth of 3C-SiC is observed with the following preferential orientation with respect to the substrate: [%$0001%$]$ Al_{2} %$ O_{3} $||[111]SiС and [%$2\bar {1}\bar {1}0%$]$ Al_{2} %$ O_{3} $||[%$2\bar {1}\bar {1}%$]SiС, [%$1\bar {1}00%$]$ Al_{2} %$ O_{3} $||[%$1\bar {1}0%$]SiС. The shape of the reflections from the {011} and {131} 3C–SiC planes on the electron diffraction pattern indicates the presence of local regions in the film that are rotated at angles of up to 7.5° around the growth axis. Thus, it is found that the 3C–SiC film obtained on α‑$ Al_{2} %$ O_{3} $ at a substrate temperature of 1000°C has a mosaic structure partially compensating for the mechanical stresses arising from a mismatch between the lattice parameters and thermal-expansion coefficients along the basal plane. Gusev, A. S. verfasserin aut Ryndya, S. M. verfasserin aut Timofeev, A. A. verfasserin aut Grekhov, M. M. verfasserin aut Siglovaya, N. V. verfasserin aut Antonenko, S. V. verfasserin aut Enthalten in Journal of surface investigation Moscow : MAIK Nauka/Interperiodics Publ., 2007 13(2019), 2 vom: März, Seite 232-239 (DE-627)546007252 (DE-600)2389417-9 1819-7094 nnns volume:13 year:2019 number:2 month:03 pages:232-239 https://dx.doi.org/10.1134/S1027451019020101 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 ASE 51.30 ASE AR 13 2019 2 03 232-239 |
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Kargin, N. I. @@aut@@ Gusev, A. S. @@aut@@ Ryndya, S. M. @@aut@@ Timofeev, A. A. @@aut@@ Grekhov, M. M. @@aut@@ Siglovaya, N. V. @@aut@@ Antonenko, S. V. @@aut@@ |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR021915784</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230519230759.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s2019 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1134/S1027451019020101</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR021915784</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)S1027451019020101-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">540</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.68</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.30</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Kargin, N. I.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">PLD Grown SiC Thin Films on $ Al_{2} %$ O_{3} $: Morphology and Structure</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract In this paper, submicron SiC thin films are obtained on α-$ Al_{2} %$ O_{3} $ (0001) substrates from a ceramic target in vacuum by means of pulsed laser deposition. The influence of the substrate temperature on the composition, structure and surface morphology of the experimental samples is studied using scanning and transmission electron microscopy, scanning probe microscopy, X-ray diffractometry, Fourier transform infrared spectroscopy and Raman spectrometry. It is shown that at Tsub = 1000°C the heteroepitaxial growth of 3C-SiC is observed with the following preferential orientation with respect to the substrate: [%$0001%$]$ Al_{2} %$ O_{3} $||[111]SiС and [%$2\bar {1}\bar {1}0%$]$ Al_{2} %$ O_{3} $||[%$2\bar {1}\bar {1}%$]SiС, [%$1\bar {1}00%$]$ Al_{2} %$ O_{3} $||[%$1\bar {1}0%$]SiС. The shape of the reflections from the {011} and {131} 3C–SiC planes on the electron diffraction pattern indicates the presence of local regions in the film that are rotated at angles of up to 7.5° around the growth axis. Thus, it is found that the 3C–SiC film obtained on α‑$ Al_{2} %$ O_{3} $ at a substrate temperature of 1000°C has a mosaic structure partially compensating for the mechanical stresses arising from a mismatch between the lattice parameters and thermal-expansion coefficients along the basal plane.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gusev, A. S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ryndya, S. M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Timofeev, A. A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Grekhov, M. 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Kargin, N. I. |
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Kargin, N. I. ddc 530 bkl 33.68 bkl 51.30 PLD Grown SiC Thin Films on $ Al_{2} %$ O_{3} $: Morphology and Structure |
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pld grown sic thin films on $ al_{2} %$ o_{3} $: morphology and structure |
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PLD Grown SiC Thin Films on $ Al_{2} %$ O_{3} $: Morphology and Structure |
| abstract |
Abstract In this paper, submicron SiC thin films are obtained on α-$ Al_{2} %$ O_{3} $ (0001) substrates from a ceramic target in vacuum by means of pulsed laser deposition. The influence of the substrate temperature on the composition, structure and surface morphology of the experimental samples is studied using scanning and transmission electron microscopy, scanning probe microscopy, X-ray diffractometry, Fourier transform infrared spectroscopy and Raman spectrometry. It is shown that at Tsub = 1000°C the heteroepitaxial growth of 3C-SiC is observed with the following preferential orientation with respect to the substrate: [%$0001%$]$ Al_{2} %$ O_{3} $||[111]SiС and [%$2\bar {1}\bar {1}0%$]$ Al_{2} %$ O_{3} $||[%$2\bar {1}\bar {1}%$]SiС, [%$1\bar {1}00%$]$ Al_{2} %$ O_{3} $||[%$1\bar {1}0%$]SiС. The shape of the reflections from the {011} and {131} 3C–SiC planes on the electron diffraction pattern indicates the presence of local regions in the film that are rotated at angles of up to 7.5° around the growth axis. Thus, it is found that the 3C–SiC film obtained on α‑$ Al_{2} %$ O_{3} $ at a substrate temperature of 1000°C has a mosaic structure partially compensating for the mechanical stresses arising from a mismatch between the lattice parameters and thermal-expansion coefficients along the basal plane. |
| abstractGer |
Abstract In this paper, submicron SiC thin films are obtained on α-$ Al_{2} %$ O_{3} $ (0001) substrates from a ceramic target in vacuum by means of pulsed laser deposition. The influence of the substrate temperature on the composition, structure and surface morphology of the experimental samples is studied using scanning and transmission electron microscopy, scanning probe microscopy, X-ray diffractometry, Fourier transform infrared spectroscopy and Raman spectrometry. It is shown that at Tsub = 1000°C the heteroepitaxial growth of 3C-SiC is observed with the following preferential orientation with respect to the substrate: [%$0001%$]$ Al_{2} %$ O_{3} $||[111]SiС and [%$2\bar {1}\bar {1}0%$]$ Al_{2} %$ O_{3} $||[%$2\bar {1}\bar {1}%$]SiС, [%$1\bar {1}00%$]$ Al_{2} %$ O_{3} $||[%$1\bar {1}0%$]SiС. The shape of the reflections from the {011} and {131} 3C–SiC planes on the electron diffraction pattern indicates the presence of local regions in the film that are rotated at angles of up to 7.5° around the growth axis. Thus, it is found that the 3C–SiC film obtained on α‑$ Al_{2} %$ O_{3} $ at a substrate temperature of 1000°C has a mosaic structure partially compensating for the mechanical stresses arising from a mismatch between the lattice parameters and thermal-expansion coefficients along the basal plane. |
| abstract_unstemmed |
Abstract In this paper, submicron SiC thin films are obtained on α-$ Al_{2} %$ O_{3} $ (0001) substrates from a ceramic target in vacuum by means of pulsed laser deposition. The influence of the substrate temperature on the composition, structure and surface morphology of the experimental samples is studied using scanning and transmission electron microscopy, scanning probe microscopy, X-ray diffractometry, Fourier transform infrared spectroscopy and Raman spectrometry. It is shown that at Tsub = 1000°C the heteroepitaxial growth of 3C-SiC is observed with the following preferential orientation with respect to the substrate: [%$0001%$]$ Al_{2} %$ O_{3} $||[111]SiС and [%$2\bar {1}\bar {1}0%$]$ Al_{2} %$ O_{3} $||[%$2\bar {1}\bar {1}%$]SiС, [%$1\bar {1}00%$]$ Al_{2} %$ O_{3} $||[%$1\bar {1}0%$]SiС. The shape of the reflections from the {011} and {131} 3C–SiC planes on the electron diffraction pattern indicates the presence of local regions in the film that are rotated at angles of up to 7.5° around the growth axis. Thus, it is found that the 3C–SiC film obtained on α‑$ Al_{2} %$ O_{3} $ at a substrate temperature of 1000°C has a mosaic structure partially compensating for the mechanical stresses arising from a mismatch between the lattice parameters and thermal-expansion coefficients along the basal plane. |
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| container_issue |
2 |
| title_short |
PLD Grown SiC Thin Films on $ Al_{2} %$ O_{3} $: Morphology and Structure |
| url |
https://dx.doi.org/10.1134/S1027451019020101 |
| remote_bool |
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| author2 |
Gusev, A. S. Ryndya, S. M. Timofeev, A. A. Grekhov, M. M. Siglovaya, N. V. Antonenko, S. V. |
| author2Str |
Gusev, A. S. Ryndya, S. M. Timofeev, A. A. Grekhov, M. M. Siglovaya, N. V. Antonenko, S. V. |
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| doi_str |
10.1134/S1027451019020101 |
| up_date |
2024-07-04T01:00:25.592Z |
| _version_ |
1803608208803102720 |
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| score |
7.3993263 |