Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles

Abstract After a decade of effort, a large number of magnetic memory nanoparticles with different sizes and core/shell compositions have been developed. While the field-cooling memory effect is often attributed to particle size and distribution effects, other magnetic coupling parameters such as int...
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Autor*in:	Gandhi, Ashish Chhaganlal [verfasserIn] Chan, Ting Shan [verfasserIn] Pant, Jayashree [verfasserIn] Wu, Sheng Yun [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2017

Schlagwörter:	NiO nanoparticles Interfacial pinned spins Memory effect

Übergeordnetes Werk:	Enthalten in: Nanoscale research letters - New York, NY [u.a.] : Springer, 2006, 12(2017), 1 vom: 21. März
Übergeordnetes Werk:	volume:12 ; year:2017 ; number:1 ; day:21 ; month:03

Links:	Volltext

DOI / URN:	10.1186/s11671-017-1988-x

Katalog-ID:	SPR022032517

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allfields	10.1186/s11671-017-1988-x doi (DE-627)SPR022032517 (SPR)s11671-017-1988-x-e DE-627 ger DE-627 rakwb eng 600 ASE Gandhi, Ashish Chhaganlal verfasserin aut Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract After a decade of effort, a large number of magnetic memory nanoparticles with different sizes and core/shell compositions have been developed. While the field-cooling memory effect is often attributed to particle size and distribution effects, other magnetic coupling parameters such as inter- and intra-coupling strength, exchange bias, interfacial pinned spins, and the crystallinity of the nanoparticles also have a significant influence on magnetization properties and mechanisms. In this study, we used the analysis of static- and dynamic-magnetization measurements to investigate NiO nanoparticles with different sizes and discussed how these field-cooling strengths affect their memory properties. We conclude that the observed field-cooling memory effect from bare, small size NiO nanoparticles arises because of the unidirectional anisotropy which is mediated by the interfacial strongly pinned spins. NiO nanoparticles (dpeaa)DE-He213 Interfacial pinned spins (dpeaa)DE-He213 Memory effect (dpeaa)DE-He213 Chan, Ting Shan verfasserin aut Pant, Jayashree verfasserin aut Wu, Sheng Yun verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 12(2017), 1 vom: 21. März (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:12 year:2017 number:1 day:21 month:03 https://dx.doi.org/10.1186/s11671-017-1988-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2017 1 21 03
spelling	10.1186/s11671-017-1988-x doi (DE-627)SPR022032517 (SPR)s11671-017-1988-x-e DE-627 ger DE-627 rakwb eng 600 ASE Gandhi, Ashish Chhaganlal verfasserin aut Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract After a decade of effort, a large number of magnetic memory nanoparticles with different sizes and core/shell compositions have been developed. While the field-cooling memory effect is often attributed to particle size and distribution effects, other magnetic coupling parameters such as inter- and intra-coupling strength, exchange bias, interfacial pinned spins, and the crystallinity of the nanoparticles also have a significant influence on magnetization properties and mechanisms. In this study, we used the analysis of static- and dynamic-magnetization measurements to investigate NiO nanoparticles with different sizes and discussed how these field-cooling strengths affect their memory properties. We conclude that the observed field-cooling memory effect from bare, small size NiO nanoparticles arises because of the unidirectional anisotropy which is mediated by the interfacial strongly pinned spins. NiO nanoparticles (dpeaa)DE-He213 Interfacial pinned spins (dpeaa)DE-He213 Memory effect (dpeaa)DE-He213 Chan, Ting Shan verfasserin aut Pant, Jayashree verfasserin aut Wu, Sheng Yun verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 12(2017), 1 vom: 21. März (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:12 year:2017 number:1 day:21 month:03 https://dx.doi.org/10.1186/s11671-017-1988-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2017 1 21 03
allfields_unstemmed	10.1186/s11671-017-1988-x doi (DE-627)SPR022032517 (SPR)s11671-017-1988-x-e DE-627 ger DE-627 rakwb eng 600 ASE Gandhi, Ashish Chhaganlal verfasserin aut Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract After a decade of effort, a large number of magnetic memory nanoparticles with different sizes and core/shell compositions have been developed. While the field-cooling memory effect is often attributed to particle size and distribution effects, other magnetic coupling parameters such as inter- and intra-coupling strength, exchange bias, interfacial pinned spins, and the crystallinity of the nanoparticles also have a significant influence on magnetization properties and mechanisms. In this study, we used the analysis of static- and dynamic-magnetization measurements to investigate NiO nanoparticles with different sizes and discussed how these field-cooling strengths affect their memory properties. We conclude that the observed field-cooling memory effect from bare, small size NiO nanoparticles arises because of the unidirectional anisotropy which is mediated by the interfacial strongly pinned spins. NiO nanoparticles (dpeaa)DE-He213 Interfacial pinned spins (dpeaa)DE-He213 Memory effect (dpeaa)DE-He213 Chan, Ting Shan verfasserin aut Pant, Jayashree verfasserin aut Wu, Sheng Yun verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 12(2017), 1 vom: 21. März (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:12 year:2017 number:1 day:21 month:03 https://dx.doi.org/10.1186/s11671-017-1988-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2017 1 21 03
allfieldsGer	10.1186/s11671-017-1988-x doi (DE-627)SPR022032517 (SPR)s11671-017-1988-x-e DE-627 ger DE-627 rakwb eng 600 ASE Gandhi, Ashish Chhaganlal verfasserin aut Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract After a decade of effort, a large number of magnetic memory nanoparticles with different sizes and core/shell compositions have been developed. While the field-cooling memory effect is often attributed to particle size and distribution effects, other magnetic coupling parameters such as inter- and intra-coupling strength, exchange bias, interfacial pinned spins, and the crystallinity of the nanoparticles also have a significant influence on magnetization properties and mechanisms. In this study, we used the analysis of static- and dynamic-magnetization measurements to investigate NiO nanoparticles with different sizes and discussed how these field-cooling strengths affect their memory properties. We conclude that the observed field-cooling memory effect from bare, small size NiO nanoparticles arises because of the unidirectional anisotropy which is mediated by the interfacial strongly pinned spins. NiO nanoparticles (dpeaa)DE-He213 Interfacial pinned spins (dpeaa)DE-He213 Memory effect (dpeaa)DE-He213 Chan, Ting Shan verfasserin aut Pant, Jayashree verfasserin aut Wu, Sheng Yun verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 12(2017), 1 vom: 21. März (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:12 year:2017 number:1 day:21 month:03 https://dx.doi.org/10.1186/s11671-017-1988-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2017 1 21 03
allfieldsSound	10.1186/s11671-017-1988-x doi (DE-627)SPR022032517 (SPR)s11671-017-1988-x-e DE-627 ger DE-627 rakwb eng 600 ASE Gandhi, Ashish Chhaganlal verfasserin aut Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract After a decade of effort, a large number of magnetic memory nanoparticles with different sizes and core/shell compositions have been developed. While the field-cooling memory effect is often attributed to particle size and distribution effects, other magnetic coupling parameters such as inter- and intra-coupling strength, exchange bias, interfacial pinned spins, and the crystallinity of the nanoparticles also have a significant influence on magnetization properties and mechanisms. In this study, we used the analysis of static- and dynamic-magnetization measurements to investigate NiO nanoparticles with different sizes and discussed how these field-cooling strengths affect their memory properties. We conclude that the observed field-cooling memory effect from bare, small size NiO nanoparticles arises because of the unidirectional anisotropy which is mediated by the interfacial strongly pinned spins. NiO nanoparticles (dpeaa)DE-He213 Interfacial pinned spins (dpeaa)DE-He213 Memory effect (dpeaa)DE-He213 Chan, Ting Shan verfasserin aut Pant, Jayashree verfasserin aut Wu, Sheng Yun verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 12(2017), 1 vom: 21. März (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:12 year:2017 number:1 day:21 month:03 https://dx.doi.org/10.1186/s11671-017-1988-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2017 1 21 03
language	English
source	Enthalten in Nanoscale research letters 12(2017), 1 vom: 21. März volume:12 year:2017 number:1 day:21 month:03
sourceStr	Enthalten in Nanoscale research letters 12(2017), 1 vom: 21. März volume:12 year:2017 number:1 day:21 month:03
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	NiO nanoparticles Interfacial pinned spins Memory effect
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authorswithroles_txt_mv	Gandhi, Ashish Chhaganlal @@aut@@ Chan, Ting Shan @@aut@@ Pant, Jayashree @@aut@@ Wu, Sheng Yun @@aut@@
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author	Gandhi, Ashish Chhaganlal
spellingShingle	Gandhi, Ashish Chhaganlal ddc 600 misc NiO nanoparticles misc Interfacial pinned spins misc Memory effect Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles
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topic_title	600 ASE Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles NiO nanoparticles (dpeaa)DE-He213 Interfacial pinned spins (dpeaa)DE-He213 Memory effect (dpeaa)DE-He213
topic	ddc 600 misc NiO nanoparticles misc Interfacial pinned spins misc Memory effect
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title	Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles
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title_full	Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles
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title_sort	strong pinned-spin-mediated memory effect in nio nanoparticles
title_auth	Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles
abstract	Abstract After a decade of effort, a large number of magnetic memory nanoparticles with different sizes and core/shell compositions have been developed. While the field-cooling memory effect is often attributed to particle size and distribution effects, other magnetic coupling parameters such as inter- and intra-coupling strength, exchange bias, interfacial pinned spins, and the crystallinity of the nanoparticles also have a significant influence on magnetization properties and mechanisms. In this study, we used the analysis of static- and dynamic-magnetization measurements to investigate NiO nanoparticles with different sizes and discussed how these field-cooling strengths affect their memory properties. We conclude that the observed field-cooling memory effect from bare, small size NiO nanoparticles arises because of the unidirectional anisotropy which is mediated by the interfacial strongly pinned spins.
abstractGer	Abstract After a decade of effort, a large number of magnetic memory nanoparticles with different sizes and core/shell compositions have been developed. While the field-cooling memory effect is often attributed to particle size and distribution effects, other magnetic coupling parameters such as inter- and intra-coupling strength, exchange bias, interfacial pinned spins, and the crystallinity of the nanoparticles also have a significant influence on magnetization properties and mechanisms. In this study, we used the analysis of static- and dynamic-magnetization measurements to investigate NiO nanoparticles with different sizes and discussed how these field-cooling strengths affect their memory properties. We conclude that the observed field-cooling memory effect from bare, small size NiO nanoparticles arises because of the unidirectional anisotropy which is mediated by the interfacial strongly pinned spins.
abstract_unstemmed	Abstract After a decade of effort, a large number of magnetic memory nanoparticles with different sizes and core/shell compositions have been developed. While the field-cooling memory effect is often attributed to particle size and distribution effects, other magnetic coupling parameters such as inter- and intra-coupling strength, exchange bias, interfacial pinned spins, and the crystallinity of the nanoparticles also have a significant influence on magnetization properties and mechanisms. In this study, we used the analysis of static- and dynamic-magnetization measurements to investigate NiO nanoparticles with different sizes and discussed how these field-cooling strengths affect their memory properties. We conclude that the observed field-cooling memory effect from bare, small size NiO nanoparticles arises because of the unidirectional anisotropy which is mediated by the interfacial strongly pinned spins.
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title_short	Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles
url	https://dx.doi.org/10.1186/s11671-017-1988-x
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up_date	2024-07-04T01:28:52.184Z
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