Optical characterisation of silicon nanocrystals embedded in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix for third generation photovoltaics

Abstract Silicon nanocrystals with an average size of approximately 4 nm dispersed in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix have been synthesised by magnetron sputtering followed by a high-temperature anneal. To gain understanding of the photon absorption and emission mechanisms of this mate...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Di, Dawei [verfasserIn] Xu, Heli [verfasserIn] Perez-Wurfl, Ivan [verfasserIn] Green, Martin A [verfasserIn] Conibeer, Gavin [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2011

Schlagwörter:	silicon nanocrystals third generation photovoltaics absorption coefficient photoluminescence band gap extraction

Übergeordnetes Werk:	Enthalten in: Nanoscale research letters - New York, NY [u.a.] : Springer, 2006, 6(2011), 1 vom: 03. Dez.
Übergeordnetes Werk:	volume:6 ; year:2011 ; number:1 ; day:03 ; month:12

Links:	Volltext

DOI / URN:	10.1186/1556-276X-6-612

Katalog-ID:	SPR022069542

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520			\|a Abstract Silicon nanocrystals with an average size of approximately 4 nm dispersed in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix have been synthesised by magnetron sputtering followed by a high-temperature anneal. To gain understanding of the photon absorption and emission mechanisms of this material, several samples are characterised optically via spectroscopy and photoluminescence measurements. The values of optical band gap are extracted from interference-minimised absorption and luminescence spectra. Measurement results suggest that these nanocrystals exhibit transitions of both direct and indirect types. Possible mechanisms of absorption and emission as well as an estimation of exciton binding energy are also discussed.
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allfields	10.1186/1556-276X-6-612 doi (DE-627)SPR022069542 (SPR)1556-276X-6-612-e DE-627 ger DE-627 rakwb eng 600 ASE Di, Dawei verfasserin aut Optical characterisation of silicon nanocrystals embedded in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix for third generation photovoltaics 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silicon nanocrystals with an average size of approximately 4 nm dispersed in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix have been synthesised by magnetron sputtering followed by a high-temperature anneal. To gain understanding of the photon absorption and emission mechanisms of this material, several samples are characterised optically via spectroscopy and photoluminescence measurements. The values of optical band gap are extracted from interference-minimised absorption and luminescence spectra. Measurement results suggest that these nanocrystals exhibit transitions of both direct and indirect types. Possible mechanisms of absorption and emission as well as an estimation of exciton binding energy are also discussed. silicon nanocrystals (dpeaa)DE-He213 third generation photovoltaics (dpeaa)DE-He213 absorption coefficient (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 band gap extraction (dpeaa)DE-He213 Xu, Heli verfasserin aut Perez-Wurfl, Ivan verfasserin aut Green, Martin A verfasserin aut Conibeer, Gavin verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 6(2011), 1 vom: 03. Dez. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:6 year:2011 number:1 day:03 month:12 https://dx.doi.org/10.1186/1556-276X-6-612 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2011 1 03 12
spelling	10.1186/1556-276X-6-612 doi (DE-627)SPR022069542 (SPR)1556-276X-6-612-e DE-627 ger DE-627 rakwb eng 600 ASE Di, Dawei verfasserin aut Optical characterisation of silicon nanocrystals embedded in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix for third generation photovoltaics 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silicon nanocrystals with an average size of approximately 4 nm dispersed in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix have been synthesised by magnetron sputtering followed by a high-temperature anneal. To gain understanding of the photon absorption and emission mechanisms of this material, several samples are characterised optically via spectroscopy and photoluminescence measurements. The values of optical band gap are extracted from interference-minimised absorption and luminescence spectra. Measurement results suggest that these nanocrystals exhibit transitions of both direct and indirect types. Possible mechanisms of absorption and emission as well as an estimation of exciton binding energy are also discussed. silicon nanocrystals (dpeaa)DE-He213 third generation photovoltaics (dpeaa)DE-He213 absorption coefficient (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 band gap extraction (dpeaa)DE-He213 Xu, Heli verfasserin aut Perez-Wurfl, Ivan verfasserin aut Green, Martin A verfasserin aut Conibeer, Gavin verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 6(2011), 1 vom: 03. Dez. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:6 year:2011 number:1 day:03 month:12 https://dx.doi.org/10.1186/1556-276X-6-612 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2011 1 03 12
allfields_unstemmed	10.1186/1556-276X-6-612 doi (DE-627)SPR022069542 (SPR)1556-276X-6-612-e DE-627 ger DE-627 rakwb eng 600 ASE Di, Dawei verfasserin aut Optical characterisation of silicon nanocrystals embedded in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix for third generation photovoltaics 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silicon nanocrystals with an average size of approximately 4 nm dispersed in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix have been synthesised by magnetron sputtering followed by a high-temperature anneal. To gain understanding of the photon absorption and emission mechanisms of this material, several samples are characterised optically via spectroscopy and photoluminescence measurements. The values of optical band gap are extracted from interference-minimised absorption and luminescence spectra. Measurement results suggest that these nanocrystals exhibit transitions of both direct and indirect types. Possible mechanisms of absorption and emission as well as an estimation of exciton binding energy are also discussed. silicon nanocrystals (dpeaa)DE-He213 third generation photovoltaics (dpeaa)DE-He213 absorption coefficient (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 band gap extraction (dpeaa)DE-He213 Xu, Heli verfasserin aut Perez-Wurfl, Ivan verfasserin aut Green, Martin A verfasserin aut Conibeer, Gavin verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 6(2011), 1 vom: 03. Dez. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:6 year:2011 number:1 day:03 month:12 https://dx.doi.org/10.1186/1556-276X-6-612 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2011 1 03 12
allfieldsGer	10.1186/1556-276X-6-612 doi (DE-627)SPR022069542 (SPR)1556-276X-6-612-e DE-627 ger DE-627 rakwb eng 600 ASE Di, Dawei verfasserin aut Optical characterisation of silicon nanocrystals embedded in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix for third generation photovoltaics 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silicon nanocrystals with an average size of approximately 4 nm dispersed in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix have been synthesised by magnetron sputtering followed by a high-temperature anneal. To gain understanding of the photon absorption and emission mechanisms of this material, several samples are characterised optically via spectroscopy and photoluminescence measurements. The values of optical band gap are extracted from interference-minimised absorption and luminescence spectra. Measurement results suggest that these nanocrystals exhibit transitions of both direct and indirect types. Possible mechanisms of absorption and emission as well as an estimation of exciton binding energy are also discussed. silicon nanocrystals (dpeaa)DE-He213 third generation photovoltaics (dpeaa)DE-He213 absorption coefficient (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 band gap extraction (dpeaa)DE-He213 Xu, Heli verfasserin aut Perez-Wurfl, Ivan verfasserin aut Green, Martin A verfasserin aut Conibeer, Gavin verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 6(2011), 1 vom: 03. Dez. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:6 year:2011 number:1 day:03 month:12 https://dx.doi.org/10.1186/1556-276X-6-612 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2011 1 03 12
allfieldsSound	10.1186/1556-276X-6-612 doi (DE-627)SPR022069542 (SPR)1556-276X-6-612-e DE-627 ger DE-627 rakwb eng 600 ASE Di, Dawei verfasserin aut Optical characterisation of silicon nanocrystals embedded in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix for third generation photovoltaics 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silicon nanocrystals with an average size of approximately 4 nm dispersed in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix have been synthesised by magnetron sputtering followed by a high-temperature anneal. To gain understanding of the photon absorption and emission mechanisms of this material, several samples are characterised optically via spectroscopy and photoluminescence measurements. The values of optical band gap are extracted from interference-minimised absorption and luminescence spectra. Measurement results suggest that these nanocrystals exhibit transitions of both direct and indirect types. Possible mechanisms of absorption and emission as well as an estimation of exciton binding energy are also discussed. silicon nanocrystals (dpeaa)DE-He213 third generation photovoltaics (dpeaa)DE-He213 absorption coefficient (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 band gap extraction (dpeaa)DE-He213 Xu, Heli verfasserin aut Perez-Wurfl, Ivan verfasserin aut Green, Martin A verfasserin aut Conibeer, Gavin verfasserin aut Enthalten in Nanoscale research letters New York, NY [u.a.] : Springer, 2006 6(2011), 1 vom: 03. Dez. (DE-627)518632474 (DE-600)2253244-4 1556-276X nnns volume:6 year:2011 number:1 day:03 month:12 https://dx.doi.org/10.1186/1556-276X-6-612 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2011 1 03 12
language	English
source	Enthalten in Nanoscale research letters 6(2011), 1 vom: 03. Dez. volume:6 year:2011 number:1 day:03 month:12
sourceStr	Enthalten in Nanoscale research letters 6(2011), 1 vom: 03. Dez. volume:6 year:2011 number:1 day:03 month:12
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	silicon nanocrystals third generation photovoltaics absorption coefficient photoluminescence band gap extraction
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container_title	Nanoscale research letters
authorswithroles_txt_mv	Di, Dawei @@aut@@ Xu, Heli @@aut@@ Perez-Wurfl, Ivan @@aut@@ Green, Martin A @@aut@@ Conibeer, Gavin @@aut@@
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author	Di, Dawei
spellingShingle	Di, Dawei ddc 600 misc silicon nanocrystals misc third generation photovoltaics misc absorption coefficient misc photoluminescence misc band gap extraction Optical characterisation of silicon nanocrystals embedded in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix for third generation photovoltaics
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topic_title	600 ASE Optical characterisation of silicon nanocrystals embedded in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix for third generation photovoltaics silicon nanocrystals (dpeaa)DE-He213 third generation photovoltaics (dpeaa)DE-He213 absorption coefficient (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 band gap extraction (dpeaa)DE-He213
topic	ddc 600 misc silicon nanocrystals misc third generation photovoltaics misc absorption coefficient misc photoluminescence misc band gap extraction
topic_unstemmed	ddc 600 misc silicon nanocrystals misc third generation photovoltaics misc absorption coefficient misc photoluminescence misc band gap extraction
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title	Optical characterisation of silicon nanocrystals embedded in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix for third generation photovoltaics
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title_full	Optical characterisation of silicon nanocrystals embedded in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix for third generation photovoltaics
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title_sort	optical characterisation of silicon nanocrystals embedded in $ sio_{2} $/$ si_{3} %$ n_{4} $ hybrid matrix for third generation photovoltaics
title_auth	Optical characterisation of silicon nanocrystals embedded in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix for third generation photovoltaics
abstract	Abstract Silicon nanocrystals with an average size of approximately 4 nm dispersed in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix have been synthesised by magnetron sputtering followed by a high-temperature anneal. To gain understanding of the photon absorption and emission mechanisms of this material, several samples are characterised optically via spectroscopy and photoluminescence measurements. The values of optical band gap are extracted from interference-minimised absorption and luminescence spectra. Measurement results suggest that these nanocrystals exhibit transitions of both direct and indirect types. Possible mechanisms of absorption and emission as well as an estimation of exciton binding energy are also discussed.
abstractGer	Abstract Silicon nanocrystals with an average size of approximately 4 nm dispersed in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix have been synthesised by magnetron sputtering followed by a high-temperature anneal. To gain understanding of the photon absorption and emission mechanisms of this material, several samples are characterised optically via spectroscopy and photoluminescence measurements. The values of optical band gap are extracted from interference-minimised absorption and luminescence spectra. Measurement results suggest that these nanocrystals exhibit transitions of both direct and indirect types. Possible mechanisms of absorption and emission as well as an estimation of exciton binding energy are also discussed.
abstract_unstemmed	Abstract Silicon nanocrystals with an average size of approximately 4 nm dispersed in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix have been synthesised by magnetron sputtering followed by a high-temperature anneal. To gain understanding of the photon absorption and emission mechanisms of this material, several samples are characterised optically via spectroscopy and photoluminescence measurements. The values of optical band gap are extracted from interference-minimised absorption and luminescence spectra. Measurement results suggest that these nanocrystals exhibit transitions of both direct and indirect types. Possible mechanisms of absorption and emission as well as an estimation of exciton binding energy are also discussed.
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title_short	Optical characterisation of silicon nanocrystals embedded in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix for third generation photovoltaics
url	https://dx.doi.org/10.1186/1556-276X-6-612
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Optical characterisation of silicon nanocrystals embedded in $ SiO_{2} $/$ Si_{3} %$ N_{4} $ hybrid matrix for third generation photovoltaics

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