Linear HgCdTe IR FPA 288×4 with bidirectional scanning

Abstract The long wavelength (8–12 μm) IR FPA 288×4 based on a hybrid assembly of $ n^{+} $-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning have been developed, fabricated, and inv...
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Autor*in:	Vasilyev, V.V. [verfasserIn] Predein, A.V. Varavin, V.S. Mikhailov, N.N. Dvoretsky, S.A. Gumenjuk-Sichevska, J.V. Golenkov, A.G. Reva, V.P. Sabinina, I.V. Sidorov, Yu.G. Susliakov, A.O. Sizov, F.F. Aseev, A.L

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2010

Schlagwörter:	IR FPA hybrid assembly thermal imaging LWIR

Anmerkung:	© © Versita Warsaw and Springer-Verlag Wien 2010

Übergeordnetes Werk:	Enthalten in: Opto-electronics review - [Erscheinungsort nicht ermittelbar] : Elsevier, 1992, 18(2010), 3 vom: Sept., Seite 332-337
Übergeordnetes Werk:	volume:18 ; year:2010 ; number:3 ; month:09 ; pages:332-337

Links:	Volltext

DOI / URN:	10.2478/s11772-010-1021-z

Katalog-ID:	SPR022386173

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700	1		\|a Susliakov, A.O. \|4 aut
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700	1		\|a Aseev, A.L \|4 aut
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allfields	10.2478/s11772-010-1021-z doi (DE-627)SPR022386173 (SPR)s11772-010-1021-z-e DE-627 ger DE-627 rakwb eng Vasilyev, V.V. verfasserin aut Linear HgCdTe IR FPA 288×4 with bidirectional scanning 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © © Versita Warsaw and Springer-Verlag Wien 2010 Abstract The long wavelength (8–12 μm) IR FPA 288×4 based on a hybrid assembly of $ n^{+} $-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning have been developed, fabricated, and investigated. The p-type MCT structures were obtained by thermal annealing of as-grown n-type material in inert atmosphere. The MCT photosensitive layer with the composition 0.20–0.23 of mole fraction of CdTe was surrounded by the wide gap layers to decrease the recombination rate and surface leakage current. The diode arrays were fabricated by planar implantation of boron ions into p-MCT. The typical dark currents were about 4–7 nA at the reverse bias voltage of 150 mV. The differential resistance R was up to $ R_{0} $ = 1.6×$ 10^{7} $ Ω zero bias voltage, which corresponded to $ R_{0} $A ∼70 Ω ·$ cm^{2} $ and to the maximal value $ R_{max} $ = 2.1 × $ 10^{8} $ Ω. The bidirectional TDI deselecting ROIC was developed and fabricated by 1.0-μm CMOS technology with two metallic and two polysilicon layers. The IR FPAs were free of defect channels and have the average values of responsivity $ S_{λ} $ = 2.27×$ 10^{8} $ V/W, the detectivity $ D_{λ} $* = 2.13 × $ 10^{11} $ cm × $ Hz^{1/2} $ × $ W^{t1} $, and the noise equivalent temperature difference NETD = 9 mK. IR FPA (dpeaa)DE-He213 hybrid assembly (dpeaa)DE-He213 thermal imaging (dpeaa)DE-He213 LWIR (dpeaa)DE-He213 Predein, A.V. aut Varavin, V.S. aut Mikhailov, N.N. aut Dvoretsky, S.A. aut Gumenjuk-Sichevska, J.V. aut Golenkov, A.G. aut Reva, V.P. aut Sabinina, I.V. aut Sidorov, Yu.G. aut Susliakov, A.O. aut Sizov, F.F. aut Aseev, A.L aut Enthalten in Opto-electronics review [Erscheinungsort nicht ermittelbar] : Elsevier, 1992 18(2010), 3 vom: Sept., Seite 332-337 (DE-627)377329320 (DE-600)2132919-9 1896-3757 nnns volume:18 year:2010 number:3 month:09 pages:332-337 https://dx.doi.org/10.2478/s11772-010-1021-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2190 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 18 2010 3 09 332-337
spelling	10.2478/s11772-010-1021-z doi (DE-627)SPR022386173 (SPR)s11772-010-1021-z-e DE-627 ger DE-627 rakwb eng Vasilyev, V.V. verfasserin aut Linear HgCdTe IR FPA 288×4 with bidirectional scanning 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © © Versita Warsaw and Springer-Verlag Wien 2010 Abstract The long wavelength (8–12 μm) IR FPA 288×4 based on a hybrid assembly of $ n^{+} $-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning have been developed, fabricated, and investigated. The p-type MCT structures were obtained by thermal annealing of as-grown n-type material in inert atmosphere. The MCT photosensitive layer with the composition 0.20–0.23 of mole fraction of CdTe was surrounded by the wide gap layers to decrease the recombination rate and surface leakage current. The diode arrays were fabricated by planar implantation of boron ions into p-MCT. The typical dark currents were about 4–7 nA at the reverse bias voltage of 150 mV. The differential resistance R was up to $ R_{0} $ = 1.6×$ 10^{7} $ Ω zero bias voltage, which corresponded to $ R_{0} $A ∼70 Ω ·$ cm^{2} $ and to the maximal value $ R_{max} $ = 2.1 × $ 10^{8} $ Ω. The bidirectional TDI deselecting ROIC was developed and fabricated by 1.0-μm CMOS technology with two metallic and two polysilicon layers. The IR FPAs were free of defect channels and have the average values of responsivity $ S_{λ} $ = 2.27×$ 10^{8} $ V/W, the detectivity $ D_{λ} $* = 2.13 × $ 10^{11} $ cm × $ Hz^{1/2} $ × $ W^{t1} $, and the noise equivalent temperature difference NETD = 9 mK. IR FPA (dpeaa)DE-He213 hybrid assembly (dpeaa)DE-He213 thermal imaging (dpeaa)DE-He213 LWIR (dpeaa)DE-He213 Predein, A.V. aut Varavin, V.S. aut Mikhailov, N.N. aut Dvoretsky, S.A. aut Gumenjuk-Sichevska, J.V. aut Golenkov, A.G. aut Reva, V.P. aut Sabinina, I.V. aut Sidorov, Yu.G. aut Susliakov, A.O. aut Sizov, F.F. aut Aseev, A.L aut Enthalten in Opto-electronics review [Erscheinungsort nicht ermittelbar] : Elsevier, 1992 18(2010), 3 vom: Sept., Seite 332-337 (DE-627)377329320 (DE-600)2132919-9 1896-3757 nnns volume:18 year:2010 number:3 month:09 pages:332-337 https://dx.doi.org/10.2478/s11772-010-1021-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2190 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 18 2010 3 09 332-337
allfields_unstemmed	10.2478/s11772-010-1021-z doi (DE-627)SPR022386173 (SPR)s11772-010-1021-z-e DE-627 ger DE-627 rakwb eng Vasilyev, V.V. verfasserin aut Linear HgCdTe IR FPA 288×4 with bidirectional scanning 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © © Versita Warsaw and Springer-Verlag Wien 2010 Abstract The long wavelength (8–12 μm) IR FPA 288×4 based on a hybrid assembly of $ n^{+} $-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning have been developed, fabricated, and investigated. The p-type MCT structures were obtained by thermal annealing of as-grown n-type material in inert atmosphere. The MCT photosensitive layer with the composition 0.20–0.23 of mole fraction of CdTe was surrounded by the wide gap layers to decrease the recombination rate and surface leakage current. The diode arrays were fabricated by planar implantation of boron ions into p-MCT. The typical dark currents were about 4–7 nA at the reverse bias voltage of 150 mV. The differential resistance R was up to $ R_{0} $ = 1.6×$ 10^{7} $ Ω zero bias voltage, which corresponded to $ R_{0} $A ∼70 Ω ·$ cm^{2} $ and to the maximal value $ R_{max} $ = 2.1 × $ 10^{8} $ Ω. The bidirectional TDI deselecting ROIC was developed and fabricated by 1.0-μm CMOS technology with two metallic and two polysilicon layers. The IR FPAs were free of defect channels and have the average values of responsivity $ S_{λ} $ = 2.27×$ 10^{8} $ V/W, the detectivity $ D_{λ} $* = 2.13 × $ 10^{11} $ cm × $ Hz^{1/2} $ × $ W^{t1} $, and the noise equivalent temperature difference NETD = 9 mK. IR FPA (dpeaa)DE-He213 hybrid assembly (dpeaa)DE-He213 thermal imaging (dpeaa)DE-He213 LWIR (dpeaa)DE-He213 Predein, A.V. aut Varavin, V.S. aut Mikhailov, N.N. aut Dvoretsky, S.A. aut Gumenjuk-Sichevska, J.V. aut Golenkov, A.G. aut Reva, V.P. aut Sabinina, I.V. aut Sidorov, Yu.G. aut Susliakov, A.O. aut Sizov, F.F. aut Aseev, A.L aut Enthalten in Opto-electronics review [Erscheinungsort nicht ermittelbar] : Elsevier, 1992 18(2010), 3 vom: Sept., Seite 332-337 (DE-627)377329320 (DE-600)2132919-9 1896-3757 nnns volume:18 year:2010 number:3 month:09 pages:332-337 https://dx.doi.org/10.2478/s11772-010-1021-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2190 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 18 2010 3 09 332-337
allfieldsGer	10.2478/s11772-010-1021-z doi (DE-627)SPR022386173 (SPR)s11772-010-1021-z-e DE-627 ger DE-627 rakwb eng Vasilyev, V.V. verfasserin aut Linear HgCdTe IR FPA 288×4 with bidirectional scanning 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © © Versita Warsaw and Springer-Verlag Wien 2010 Abstract The long wavelength (8–12 μm) IR FPA 288×4 based on a hybrid assembly of $ n^{+} $-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning have been developed, fabricated, and investigated. The p-type MCT structures were obtained by thermal annealing of as-grown n-type material in inert atmosphere. The MCT photosensitive layer with the composition 0.20–0.23 of mole fraction of CdTe was surrounded by the wide gap layers to decrease the recombination rate and surface leakage current. The diode arrays were fabricated by planar implantation of boron ions into p-MCT. The typical dark currents were about 4–7 nA at the reverse bias voltage of 150 mV. The differential resistance R was up to $ R_{0} $ = 1.6×$ 10^{7} $ Ω zero bias voltage, which corresponded to $ R_{0} $A ∼70 Ω ·$ cm^{2} $ and to the maximal value $ R_{max} $ = 2.1 × $ 10^{8} $ Ω. The bidirectional TDI deselecting ROIC was developed and fabricated by 1.0-μm CMOS technology with two metallic and two polysilicon layers. The IR FPAs were free of defect channels and have the average values of responsivity $ S_{λ} $ = 2.27×$ 10^{8} $ V/W, the detectivity $ D_{λ} $* = 2.13 × $ 10^{11} $ cm × $ Hz^{1/2} $ × $ W^{t1} $, and the noise equivalent temperature difference NETD = 9 mK. IR FPA (dpeaa)DE-He213 hybrid assembly (dpeaa)DE-He213 thermal imaging (dpeaa)DE-He213 LWIR (dpeaa)DE-He213 Predein, A.V. aut Varavin, V.S. aut Mikhailov, N.N. aut Dvoretsky, S.A. aut Gumenjuk-Sichevska, J.V. aut Golenkov, A.G. aut Reva, V.P. aut Sabinina, I.V. aut Sidorov, Yu.G. aut Susliakov, A.O. aut Sizov, F.F. aut Aseev, A.L aut Enthalten in Opto-electronics review [Erscheinungsort nicht ermittelbar] : Elsevier, 1992 18(2010), 3 vom: Sept., Seite 332-337 (DE-627)377329320 (DE-600)2132919-9 1896-3757 nnns volume:18 year:2010 number:3 month:09 pages:332-337 https://dx.doi.org/10.2478/s11772-010-1021-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2190 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 18 2010 3 09 332-337
allfieldsSound	10.2478/s11772-010-1021-z doi (DE-627)SPR022386173 (SPR)s11772-010-1021-z-e DE-627 ger DE-627 rakwb eng Vasilyev, V.V. verfasserin aut Linear HgCdTe IR FPA 288×4 with bidirectional scanning 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © © Versita Warsaw and Springer-Verlag Wien 2010 Abstract The long wavelength (8–12 μm) IR FPA 288×4 based on a hybrid assembly of $ n^{+} $-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning have been developed, fabricated, and investigated. The p-type MCT structures were obtained by thermal annealing of as-grown n-type material in inert atmosphere. The MCT photosensitive layer with the composition 0.20–0.23 of mole fraction of CdTe was surrounded by the wide gap layers to decrease the recombination rate and surface leakage current. The diode arrays were fabricated by planar implantation of boron ions into p-MCT. The typical dark currents were about 4–7 nA at the reverse bias voltage of 150 mV. The differential resistance R was up to $ R_{0} $ = 1.6×$ 10^{7} $ Ω zero bias voltage, which corresponded to $ R_{0} $A ∼70 Ω ·$ cm^{2} $ and to the maximal value $ R_{max} $ = 2.1 × $ 10^{8} $ Ω. The bidirectional TDI deselecting ROIC was developed and fabricated by 1.0-μm CMOS technology with two metallic and two polysilicon layers. The IR FPAs were free of defect channels and have the average values of responsivity $ S_{λ} $ = 2.27×$ 10^{8} $ V/W, the detectivity $ D_{λ} $* = 2.13 × $ 10^{11} $ cm × $ Hz^{1/2} $ × $ W^{t1} $, and the noise equivalent temperature difference NETD = 9 mK. IR FPA (dpeaa)DE-He213 hybrid assembly (dpeaa)DE-He213 thermal imaging (dpeaa)DE-He213 LWIR (dpeaa)DE-He213 Predein, A.V. aut Varavin, V.S. aut Mikhailov, N.N. aut Dvoretsky, S.A. aut Gumenjuk-Sichevska, J.V. aut Golenkov, A.G. aut Reva, V.P. aut Sabinina, I.V. aut Sidorov, Yu.G. aut Susliakov, A.O. aut Sizov, F.F. aut Aseev, A.L aut Enthalten in Opto-electronics review [Erscheinungsort nicht ermittelbar] : Elsevier, 1992 18(2010), 3 vom: Sept., Seite 332-337 (DE-627)377329320 (DE-600)2132919-9 1896-3757 nnns volume:18 year:2010 number:3 month:09 pages:332-337 https://dx.doi.org/10.2478/s11772-010-1021-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2190 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 18 2010 3 09 332-337
language	English
source	Enthalten in Opto-electronics review 18(2010), 3 vom: Sept., Seite 332-337 volume:18 year:2010 number:3 month:09 pages:332-337
sourceStr	Enthalten in Opto-electronics review 18(2010), 3 vom: Sept., Seite 332-337 volume:18 year:2010 number:3 month:09 pages:332-337
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	IR FPA hybrid assembly thermal imaging LWIR
isfreeaccess_bool	false
container_title	Opto-electronics review
authorswithroles_txt_mv	Vasilyev, V.V. @@aut@@ Predein, A.V. @@aut@@ Varavin, V.S. @@aut@@ Mikhailov, N.N. @@aut@@ Dvoretsky, S.A. @@aut@@ Gumenjuk-Sichevska, J.V. @@aut@@ Golenkov, A.G. @@aut@@ Reva, V.P. @@aut@@ Sabinina, I.V. @@aut@@ Sidorov, Yu.G. @@aut@@ Susliakov, A.O. @@aut@@ Sizov, F.F. @@aut@@ Aseev, A.L @@aut@@
publishDateDaySort_date	2010-09-01T00:00:00Z
hierarchy_top_id	377329320
id	SPR022386173
language_de	englisch
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author	Vasilyev, V.V.
spellingShingle	Vasilyev, V.V. misc IR FPA misc hybrid assembly misc thermal imaging misc LWIR Linear HgCdTe IR FPA 288×4 with bidirectional scanning
authorStr	Vasilyev, V.V.
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topic_title	Linear HgCdTe IR FPA 288×4 with bidirectional scanning IR FPA (dpeaa)DE-He213 hybrid assembly (dpeaa)DE-He213 thermal imaging (dpeaa)DE-He213 LWIR (dpeaa)DE-He213
topic	misc IR FPA misc hybrid assembly misc thermal imaging misc LWIR
topic_unstemmed	misc IR FPA misc hybrid assembly misc thermal imaging misc LWIR
topic_browse	misc IR FPA misc hybrid assembly misc thermal imaging misc LWIR
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Linear HgCdTe IR FPA 288×4 with bidirectional scanning
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title_full	Linear HgCdTe IR FPA 288×4 with bidirectional scanning
author_sort	Vasilyev, V.V.
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author_browse	Vasilyev, V.V. Predein, A.V. Varavin, V.S. Mikhailov, N.N. Dvoretsky, S.A. Gumenjuk-Sichevska, J.V. Golenkov, A.G. Reva, V.P. Sabinina, I.V. Sidorov, Yu.G. Susliakov, A.O. Sizov, F.F. Aseev, A.L
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author-letter	Vasilyev, V.V.
doi_str_mv	10.2478/s11772-010-1021-z
title_sort	linear hgcdte ir fpa 288×4 with bidirectional scanning
title_auth	Linear HgCdTe IR FPA 288×4 with bidirectional scanning
abstract	Abstract The long wavelength (8–12 μm) IR FPA 288×4 based on a hybrid assembly of $ n^{+} $-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning have been developed, fabricated, and investigated. The p-type MCT structures were obtained by thermal annealing of as-grown n-type material in inert atmosphere. The MCT photosensitive layer with the composition 0.20–0.23 of mole fraction of CdTe was surrounded by the wide gap layers to decrease the recombination rate and surface leakage current. The diode arrays were fabricated by planar implantation of boron ions into p-MCT. The typical dark currents were about 4–7 nA at the reverse bias voltage of 150 mV. The differential resistance R was up to $ R_{0} $ = 1.6×$ 10^{7} $ Ω zero bias voltage, which corresponded to $ R_{0} $A ∼70 Ω ·$ cm^{2} $ and to the maximal value $ R_{max} $ = 2.1 × $ 10^{8} $ Ω. The bidirectional TDI deselecting ROIC was developed and fabricated by 1.0-μm CMOS technology with two metallic and two polysilicon layers. The IR FPAs were free of defect channels and have the average values of responsivity $ S_{λ} $ = 2.27×$ 10^{8} $ V/W, the detectivity $ D_{λ} $* = 2.13 × $ 10^{11} $ cm × $ Hz^{1/2} $ × $ W^{t1} $, and the noise equivalent temperature difference NETD = 9 mK. © © Versita Warsaw and Springer-Verlag Wien 2010
abstractGer	Abstract The long wavelength (8–12 μm) IR FPA 288×4 based on a hybrid assembly of $ n^{+} $-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning have been developed, fabricated, and investigated. The p-type MCT structures were obtained by thermal annealing of as-grown n-type material in inert atmosphere. The MCT photosensitive layer with the composition 0.20–0.23 of mole fraction of CdTe was surrounded by the wide gap layers to decrease the recombination rate and surface leakage current. The diode arrays were fabricated by planar implantation of boron ions into p-MCT. The typical dark currents were about 4–7 nA at the reverse bias voltage of 150 mV. The differential resistance R was up to $ R_{0} $ = 1.6×$ 10^{7} $ Ω zero bias voltage, which corresponded to $ R_{0} $A ∼70 Ω ·$ cm^{2} $ and to the maximal value $ R_{max} $ = 2.1 × $ 10^{8} $ Ω. The bidirectional TDI deselecting ROIC was developed and fabricated by 1.0-μm CMOS technology with two metallic and two polysilicon layers. The IR FPAs were free of defect channels and have the average values of responsivity $ S_{λ} $ = 2.27×$ 10^{8} $ V/W, the detectivity $ D_{λ} $* = 2.13 × $ 10^{11} $ cm × $ Hz^{1/2} $ × $ W^{t1} $, and the noise equivalent temperature difference NETD = 9 mK. © © Versita Warsaw and Springer-Verlag Wien 2010
abstract_unstemmed	Abstract The long wavelength (8–12 μm) IR FPA 288×4 based on a hybrid assembly of $ n^{+} $-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning have been developed, fabricated, and investigated. The p-type MCT structures were obtained by thermal annealing of as-grown n-type material in inert atmosphere. The MCT photosensitive layer with the composition 0.20–0.23 of mole fraction of CdTe was surrounded by the wide gap layers to decrease the recombination rate and surface leakage current. The diode arrays were fabricated by planar implantation of boron ions into p-MCT. The typical dark currents were about 4–7 nA at the reverse bias voltage of 150 mV. The differential resistance R was up to $ R_{0} $ = 1.6×$ 10^{7} $ Ω zero bias voltage, which corresponded to $ R_{0} $A ∼70 Ω ·$ cm^{2} $ and to the maximal value $ R_{max} $ = 2.1 × $ 10^{8} $ Ω. The bidirectional TDI deselecting ROIC was developed and fabricated by 1.0-μm CMOS technology with two metallic and two polysilicon layers. The IR FPAs were free of defect channels and have the average values of responsivity $ S_{λ} $ = 2.27×$ 10^{8} $ V/W, the detectivity $ D_{λ} $* = 2.13 × $ 10^{11} $ cm × $ Hz^{1/2} $ × $ W^{t1} $, and the noise equivalent temperature difference NETD = 9 mK. © © Versita Warsaw and Springer-Verlag Wien 2010
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title_short	Linear HgCdTe IR FPA 288×4 with bidirectional scanning
url	https://dx.doi.org/10.2478/s11772-010-1021-z
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author2	Predein, A.V. Varavin, V.S. Mikhailov, N.N. Dvoretsky, S.A. Gumenjuk-Sichevska, J.V. Golenkov, A.G. Reva, V.P. Sabinina, I.V. Sidorov, Yu.G. Susliakov, A.O. Sizov, F.F. Aseev, A.L
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up_date	2024-07-04T02:53:43.444Z
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