Effects of Mg-doping concentration on the characteristics of InGaN based solar cells
Abstract A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 $ cm^{−3} $, 5×1017 $ cm^{−3} $, 2×$ 10^{18} $ $ cm^{−3} $, 4...
Ausführliche Beschreibung
Autor*in: |
Lu, Gang [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2015 |
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Schlagwörter: |
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Anmerkung: |
© Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2015 |
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Übergeordnetes Werk: |
Enthalten in: Optoelectronics letters - Tianjin, 2005, 11(2015), 5 vom: Sept., Seite 348-351 |
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Übergeordnetes Werk: |
volume:11 ; year:2015 ; number:5 ; month:09 ; pages:348-351 |
Links: |
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DOI / URN: |
10.1007/s11801-015-5100-4 |
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Katalog-ID: |
SPR022440976 |
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520 | |a Abstract A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 $ cm^{−3} $, 5×1017 $ cm^{−3} $, 2×$ 10^{18} $ $ cm^{−3} $, 4×$ 10^{18} $ $ cm^{−3} $ and 7×$ 10^{18} $ $ cm^{−3} $ in GaN barriers can lead to different hole concentrations in quantum wells (QWs). However, when the Mg-doping concentration is over 1×$ 10^{18} $ $ cm^{−3} $, the crystal quality degrades, which results in the reduction of the external quantum efficiency (EQE), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×$ 10^{17} $ $ cm^{−3} $ exhibits the highest conversion efficiency. | ||
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10.1007/s11801-015-5100-4 doi (DE-627)SPR022440976 (SPR)s11801-015-5100-4-e DE-627 ger DE-627 rakwb eng Lu, Gang verfasserin aut Effects of Mg-doping concentration on the characteristics of InGaN based solar cells 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2015 Abstract A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 $ cm^{−3} $, 5×1017 $ cm^{−3} $, 2×$ 10^{18} $ $ cm^{−3} $, 4×$ 10^{18} $ $ cm^{−3} $ and 7×$ 10^{18} $ $ cm^{−3} $ in GaN barriers can lead to different hole concentrations in quantum wells (QWs). However, when the Mg-doping concentration is over 1×$ 10^{18} $ $ cm^{−3} $, the crystal quality degrades, which results in the reduction of the external quantum efficiency (EQE), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×$ 10^{17} $ $ cm^{−3} $ exhibits the highest conversion efficiency. Solar Cell (dpeaa)DE-He213 External Quantum Effi (dpeaa)DE-He213 Apply Physic Letter (dpeaa)DE-He213 High Conversion Efficiency (dpeaa)DE-He213 Photogenerated Carrier (dpeaa)DE-He213 Wang, Bo aut Ge, Yun-wang aut Enthalten in Optoelectronics letters Tianjin, 2005 11(2015), 5 vom: Sept., Seite 348-351 (DE-627)537441611 (DE-600)2375972-0 1993-5013 nnns volume:11 year:2015 number:5 month:09 pages:348-351 https://dx.doi.org/10.1007/s11801-015-5100-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 11 2015 5 09 348-351 |
spelling |
10.1007/s11801-015-5100-4 doi (DE-627)SPR022440976 (SPR)s11801-015-5100-4-e DE-627 ger DE-627 rakwb eng Lu, Gang verfasserin aut Effects of Mg-doping concentration on the characteristics of InGaN based solar cells 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2015 Abstract A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 $ cm^{−3} $, 5×1017 $ cm^{−3} $, 2×$ 10^{18} $ $ cm^{−3} $, 4×$ 10^{18} $ $ cm^{−3} $ and 7×$ 10^{18} $ $ cm^{−3} $ in GaN barriers can lead to different hole concentrations in quantum wells (QWs). However, when the Mg-doping concentration is over 1×$ 10^{18} $ $ cm^{−3} $, the crystal quality degrades, which results in the reduction of the external quantum efficiency (EQE), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×$ 10^{17} $ $ cm^{−3} $ exhibits the highest conversion efficiency. Solar Cell (dpeaa)DE-He213 External Quantum Effi (dpeaa)DE-He213 Apply Physic Letter (dpeaa)DE-He213 High Conversion Efficiency (dpeaa)DE-He213 Photogenerated Carrier (dpeaa)DE-He213 Wang, Bo aut Ge, Yun-wang aut Enthalten in Optoelectronics letters Tianjin, 2005 11(2015), 5 vom: Sept., Seite 348-351 (DE-627)537441611 (DE-600)2375972-0 1993-5013 nnns volume:11 year:2015 number:5 month:09 pages:348-351 https://dx.doi.org/10.1007/s11801-015-5100-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 11 2015 5 09 348-351 |
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10.1007/s11801-015-5100-4 doi (DE-627)SPR022440976 (SPR)s11801-015-5100-4-e DE-627 ger DE-627 rakwb eng Lu, Gang verfasserin aut Effects of Mg-doping concentration on the characteristics of InGaN based solar cells 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2015 Abstract A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 $ cm^{−3} $, 5×1017 $ cm^{−3} $, 2×$ 10^{18} $ $ cm^{−3} $, 4×$ 10^{18} $ $ cm^{−3} $ and 7×$ 10^{18} $ $ cm^{−3} $ in GaN barriers can lead to different hole concentrations in quantum wells (QWs). However, when the Mg-doping concentration is over 1×$ 10^{18} $ $ cm^{−3} $, the crystal quality degrades, which results in the reduction of the external quantum efficiency (EQE), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×$ 10^{17} $ $ cm^{−3} $ exhibits the highest conversion efficiency. Solar Cell (dpeaa)DE-He213 External Quantum Effi (dpeaa)DE-He213 Apply Physic Letter (dpeaa)DE-He213 High Conversion Efficiency (dpeaa)DE-He213 Photogenerated Carrier (dpeaa)DE-He213 Wang, Bo aut Ge, Yun-wang aut Enthalten in Optoelectronics letters Tianjin, 2005 11(2015), 5 vom: Sept., Seite 348-351 (DE-627)537441611 (DE-600)2375972-0 1993-5013 nnns volume:11 year:2015 number:5 month:09 pages:348-351 https://dx.doi.org/10.1007/s11801-015-5100-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 11 2015 5 09 348-351 |
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10.1007/s11801-015-5100-4 doi (DE-627)SPR022440976 (SPR)s11801-015-5100-4-e DE-627 ger DE-627 rakwb eng Lu, Gang verfasserin aut Effects of Mg-doping concentration on the characteristics of InGaN based solar cells 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2015 Abstract A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 $ cm^{−3} $, 5×1017 $ cm^{−3} $, 2×$ 10^{18} $ $ cm^{−3} $, 4×$ 10^{18} $ $ cm^{−3} $ and 7×$ 10^{18} $ $ cm^{−3} $ in GaN barriers can lead to different hole concentrations in quantum wells (QWs). However, when the Mg-doping concentration is over 1×$ 10^{18} $ $ cm^{−3} $, the crystal quality degrades, which results in the reduction of the external quantum efficiency (EQE), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×$ 10^{17} $ $ cm^{−3} $ exhibits the highest conversion efficiency. Solar Cell (dpeaa)DE-He213 External Quantum Effi (dpeaa)DE-He213 Apply Physic Letter (dpeaa)DE-He213 High Conversion Efficiency (dpeaa)DE-He213 Photogenerated Carrier (dpeaa)DE-He213 Wang, Bo aut Ge, Yun-wang aut Enthalten in Optoelectronics letters Tianjin, 2005 11(2015), 5 vom: Sept., Seite 348-351 (DE-627)537441611 (DE-600)2375972-0 1993-5013 nnns volume:11 year:2015 number:5 month:09 pages:348-351 https://dx.doi.org/10.1007/s11801-015-5100-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 11 2015 5 09 348-351 |
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10.1007/s11801-015-5100-4 doi (DE-627)SPR022440976 (SPR)s11801-015-5100-4-e DE-627 ger DE-627 rakwb eng Lu, Gang verfasserin aut Effects of Mg-doping concentration on the characteristics of InGaN based solar cells 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2015 Abstract A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 $ cm^{−3} $, 5×1017 $ cm^{−3} $, 2×$ 10^{18} $ $ cm^{−3} $, 4×$ 10^{18} $ $ cm^{−3} $ and 7×$ 10^{18} $ $ cm^{−3} $ in GaN barriers can lead to different hole concentrations in quantum wells (QWs). However, when the Mg-doping concentration is over 1×$ 10^{18} $ $ cm^{−3} $, the crystal quality degrades, which results in the reduction of the external quantum efficiency (EQE), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×$ 10^{17} $ $ cm^{−3} $ exhibits the highest conversion efficiency. Solar Cell (dpeaa)DE-He213 External Quantum Effi (dpeaa)DE-He213 Apply Physic Letter (dpeaa)DE-He213 High Conversion Efficiency (dpeaa)DE-He213 Photogenerated Carrier (dpeaa)DE-He213 Wang, Bo aut Ge, Yun-wang aut Enthalten in Optoelectronics letters Tianjin, 2005 11(2015), 5 vom: Sept., Seite 348-351 (DE-627)537441611 (DE-600)2375972-0 1993-5013 nnns volume:11 year:2015 number:5 month:09 pages:348-351 https://dx.doi.org/10.1007/s11801-015-5100-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 11 2015 5 09 348-351 |
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Enthalten in Optoelectronics letters 11(2015), 5 vom: Sept., Seite 348-351 volume:11 year:2015 number:5 month:09 pages:348-351 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR022440976</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230330074547.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s2015 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11801-015-5100-4</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR022440976</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s11801-015-5100-4-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lu, Gang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effects of Mg-doping concentration on the characteristics of InGaN based solar cells</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2015</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 $ cm^{−3} $, 5×1017 $ cm^{−3} $, 2×$ 10^{18} $ $ cm^{−3} $, 4×$ 10^{18} $ $ cm^{−3} $ and 7×$ 10^{18} $ $ cm^{−3} $ in GaN barriers can lead to different hole concentrations in quantum wells (QWs). However, when the Mg-doping concentration is over 1×$ 10^{18} $ $ cm^{−3} $, the crystal quality degrades, which results in the reduction of the external quantum efficiency (EQE), short circuit current density and open circuit voltage. 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Lu, Gang |
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Lu, Gang misc Solar Cell misc External Quantum Effi misc Apply Physic Letter misc High Conversion Efficiency misc Photogenerated Carrier Effects of Mg-doping concentration on the characteristics of InGaN based solar cells |
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Effects of Mg-doping concentration on the characteristics of InGaN based solar cells Solar Cell (dpeaa)DE-He213 External Quantum Effi (dpeaa)DE-He213 Apply Physic Letter (dpeaa)DE-He213 High Conversion Efficiency (dpeaa)DE-He213 Photogenerated Carrier (dpeaa)DE-He213 |
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Effects of Mg-doping concentration on the characteristics of InGaN based solar cells |
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Effects of Mg-doping concentration on the characteristics of InGaN based solar cells |
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10.1007/s11801-015-5100-4 |
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effects of mg-doping concentration on the characteristics of ingan based solar cells |
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Effects of Mg-doping concentration on the characteristics of InGaN based solar cells |
abstract |
Abstract A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 $ cm^{−3} $, 5×1017 $ cm^{−3} $, 2×$ 10^{18} $ $ cm^{−3} $, 4×$ 10^{18} $ $ cm^{−3} $ and 7×$ 10^{18} $ $ cm^{−3} $ in GaN barriers can lead to different hole concentrations in quantum wells (QWs). However, when the Mg-doping concentration is over 1×$ 10^{18} $ $ cm^{−3} $, the crystal quality degrades, which results in the reduction of the external quantum efficiency (EQE), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×$ 10^{17} $ $ cm^{−3} $ exhibits the highest conversion efficiency. © Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2015 |
abstractGer |
Abstract A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 $ cm^{−3} $, 5×1017 $ cm^{−3} $, 2×$ 10^{18} $ $ cm^{−3} $, 4×$ 10^{18} $ $ cm^{−3} $ and 7×$ 10^{18} $ $ cm^{−3} $ in GaN barriers can lead to different hole concentrations in quantum wells (QWs). However, when the Mg-doping concentration is over 1×$ 10^{18} $ $ cm^{−3} $, the crystal quality degrades, which results in the reduction of the external quantum efficiency (EQE), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×$ 10^{17} $ $ cm^{−3} $ exhibits the highest conversion efficiency. © Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2015 |
abstract_unstemmed |
Abstract A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 $ cm^{−3} $, 5×1017 $ cm^{−3} $, 2×$ 10^{18} $ $ cm^{−3} $, 4×$ 10^{18} $ $ cm^{−3} $ and 7×$ 10^{18} $ $ cm^{−3} $ in GaN barriers can lead to different hole concentrations in quantum wells (QWs). However, when the Mg-doping concentration is over 1×$ 10^{18} $ $ cm^{−3} $, the crystal quality degrades, which results in the reduction of the external quantum efficiency (EQE), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×$ 10^{17} $ $ cm^{−3} $ exhibits the highest conversion efficiency. © Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2015 |
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container_issue |
5 |
title_short |
Effects of Mg-doping concentration on the characteristics of InGaN based solar cells |
url |
https://dx.doi.org/10.1007/s11801-015-5100-4 |
remote_bool |
true |
author2 |
Wang, Bo Ge, Yun-wang |
author2Str |
Wang, Bo Ge, Yun-wang |
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doi_str |
10.1007/s11801-015-5100-4 |
up_date |
2024-07-04T03:04:03.848Z |
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|
score |
7.4000015 |