Quantum chemical study of the properties of an $ SiO_{2} $/Si(100) interface implanted with boron ions
Abstract Quantum-chemical calculations of the properties of a $ B^{+} $ ion-implanted $ SiO_{2} $/Si(100) interface are presented. Dependencies of the total energy of a $ B^{+} $ ion cluster system on the location of $ B^{+} $ ions in oxygen and silicon vacancies are calculated, along with the geome...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Tkachenko, A. V. [verfasserIn] Ananina, O. Y. [verfasserIn] Yanovsky, A. S. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2010 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Bulletin of the Russian Academy of Sciences - New York, NY : Allerton Press, 2007, 74(2010), 2 vom: Feb., Seite 157-160 |
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| Übergeordnetes Werk: |
volume:74 ; year:2010 ; number:2 ; month:02 ; pages:157-160 |
| Links: |
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| DOI / URN: |
10.3103/S1062873810020127 |
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| Katalog-ID: |
SPR023154691 |
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| 520 | |a Abstract Quantum-chemical calculations of the properties of a $ B^{+} $ ion-implanted $ SiO_{2} $/Si(100) interface are presented. Dependencies of the total energy of a $ B^{+} $ ion cluster system on the location of $ B^{+} $ ions in oxygen and silicon vacancies are calculated, along with the geometric and electronic characteristics of the equilibrium cluster states with implanted boron ions. | ||
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| 700 | 1 | |a Yanovsky, A. S. |e verfasserin |4 aut | |
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10.3103/S1062873810020127 doi (DE-627)SPR023154691 (SPR)S1062873810020127-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Tkachenko, A. V. verfasserin aut Quantum chemical study of the properties of an $ SiO_{2} $/Si(100) interface implanted with boron ions 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Quantum-chemical calculations of the properties of a $ B^{+} $ ion-implanted $ SiO_{2} $/Si(100) interface are presented. Dependencies of the total energy of a $ B^{+} $ ion cluster system on the location of $ B^{+} $ ions in oxygen and silicon vacancies are calculated, along with the geometric and electronic characteristics of the equilibrium cluster states with implanted boron ions. Boron (dpeaa)DE-He213 Oxygen Vacancy (dpeaa)DE-He213 Silicon Atom (dpeaa)DE-He213 Bond Order (dpeaa)DE-He213 Boron Atom (dpeaa)DE-He213 Ananina, O. Y. verfasserin aut Yanovsky, A. S. verfasserin aut Enthalten in Bulletin of the Russian Academy of Sciences New York, NY : Allerton Press, 2007 74(2010), 2 vom: Feb., Seite 157-160 (DE-627)556723872 (DE-600)2403169-0 1934-9432 nnns volume:74 year:2010 number:2 month:02 pages:157-160 https://dx.doi.org/10.3103/S1062873810020127 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 74 2010 2 02 157-160 |
| spelling |
10.3103/S1062873810020127 doi (DE-627)SPR023154691 (SPR)S1062873810020127-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Tkachenko, A. V. verfasserin aut Quantum chemical study of the properties of an $ SiO_{2} $/Si(100) interface implanted with boron ions 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Quantum-chemical calculations of the properties of a $ B^{+} $ ion-implanted $ SiO_{2} $/Si(100) interface are presented. Dependencies of the total energy of a $ B^{+} $ ion cluster system on the location of $ B^{+} $ ions in oxygen and silicon vacancies are calculated, along with the geometric and electronic characteristics of the equilibrium cluster states with implanted boron ions. Boron (dpeaa)DE-He213 Oxygen Vacancy (dpeaa)DE-He213 Silicon Atom (dpeaa)DE-He213 Bond Order (dpeaa)DE-He213 Boron Atom (dpeaa)DE-He213 Ananina, O. Y. verfasserin aut Yanovsky, A. S. verfasserin aut Enthalten in Bulletin of the Russian Academy of Sciences New York, NY : Allerton Press, 2007 74(2010), 2 vom: Feb., Seite 157-160 (DE-627)556723872 (DE-600)2403169-0 1934-9432 nnns volume:74 year:2010 number:2 month:02 pages:157-160 https://dx.doi.org/10.3103/S1062873810020127 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 74 2010 2 02 157-160 |
| allfields_unstemmed |
10.3103/S1062873810020127 doi (DE-627)SPR023154691 (SPR)S1062873810020127-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Tkachenko, A. V. verfasserin aut Quantum chemical study of the properties of an $ SiO_{2} $/Si(100) interface implanted with boron ions 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Quantum-chemical calculations of the properties of a $ B^{+} $ ion-implanted $ SiO_{2} $/Si(100) interface are presented. Dependencies of the total energy of a $ B^{+} $ ion cluster system on the location of $ B^{+} $ ions in oxygen and silicon vacancies are calculated, along with the geometric and electronic characteristics of the equilibrium cluster states with implanted boron ions. Boron (dpeaa)DE-He213 Oxygen Vacancy (dpeaa)DE-He213 Silicon Atom (dpeaa)DE-He213 Bond Order (dpeaa)DE-He213 Boron Atom (dpeaa)DE-He213 Ananina, O. Y. verfasserin aut Yanovsky, A. S. verfasserin aut Enthalten in Bulletin of the Russian Academy of Sciences New York, NY : Allerton Press, 2007 74(2010), 2 vom: Feb., Seite 157-160 (DE-627)556723872 (DE-600)2403169-0 1934-9432 nnns volume:74 year:2010 number:2 month:02 pages:157-160 https://dx.doi.org/10.3103/S1062873810020127 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 74 2010 2 02 157-160 |
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10.3103/S1062873810020127 doi (DE-627)SPR023154691 (SPR)S1062873810020127-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Tkachenko, A. V. verfasserin aut Quantum chemical study of the properties of an $ SiO_{2} $/Si(100) interface implanted with boron ions 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Quantum-chemical calculations of the properties of a $ B^{+} $ ion-implanted $ SiO_{2} $/Si(100) interface are presented. Dependencies of the total energy of a $ B^{+} $ ion cluster system on the location of $ B^{+} $ ions in oxygen and silicon vacancies are calculated, along with the geometric and electronic characteristics of the equilibrium cluster states with implanted boron ions. Boron (dpeaa)DE-He213 Oxygen Vacancy (dpeaa)DE-He213 Silicon Atom (dpeaa)DE-He213 Bond Order (dpeaa)DE-He213 Boron Atom (dpeaa)DE-He213 Ananina, O. Y. verfasserin aut Yanovsky, A. S. verfasserin aut Enthalten in Bulletin of the Russian Academy of Sciences New York, NY : Allerton Press, 2007 74(2010), 2 vom: Feb., Seite 157-160 (DE-627)556723872 (DE-600)2403169-0 1934-9432 nnns volume:74 year:2010 number:2 month:02 pages:157-160 https://dx.doi.org/10.3103/S1062873810020127 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 74 2010 2 02 157-160 |
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Enthalten in Bulletin of the Russian Academy of Sciences 74(2010), 2 vom: Feb., Seite 157-160 volume:74 year:2010 number:2 month:02 pages:157-160 |
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Tkachenko, A. V. @@aut@@ Ananina, O. Y. @@aut@@ Yanovsky, A. S. @@aut@@ |
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2010-02-01T00:00:00Z |
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530 ASE 33.00 bkl Quantum chemical study of the properties of an $ SiO_{2} $/Si(100) interface implanted with boron ions Boron (dpeaa)DE-He213 Oxygen Vacancy (dpeaa)DE-He213 Silicon Atom (dpeaa)DE-He213 Bond Order (dpeaa)DE-He213 Boron Atom (dpeaa)DE-He213 |
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quantum chemical study of the properties of an $ sio_{2} $/si(100) interface implanted with boron ions |
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Quantum chemical study of the properties of an $ SiO_{2} $/Si(100) interface implanted with boron ions |
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Abstract Quantum-chemical calculations of the properties of a $ B^{+} $ ion-implanted $ SiO_{2} $/Si(100) interface are presented. Dependencies of the total energy of a $ B^{+} $ ion cluster system on the location of $ B^{+} $ ions in oxygen and silicon vacancies are calculated, along with the geometric and electronic characteristics of the equilibrium cluster states with implanted boron ions. |
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Abstract Quantum-chemical calculations of the properties of a $ B^{+} $ ion-implanted $ SiO_{2} $/Si(100) interface are presented. Dependencies of the total energy of a $ B^{+} $ ion cluster system on the location of $ B^{+} $ ions in oxygen and silicon vacancies are calculated, along with the geometric and electronic characteristics of the equilibrium cluster states with implanted boron ions. |
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Abstract Quantum-chemical calculations of the properties of a $ B^{+} $ ion-implanted $ SiO_{2} $/Si(100) interface are presented. Dependencies of the total energy of a $ B^{+} $ ion cluster system on the location of $ B^{+} $ ions in oxygen and silicon vacancies are calculated, along with the geometric and electronic characteristics of the equilibrium cluster states with implanted boron ions. |
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