Influence of thin dielectric layers on electron emission and plasma-surface contact stability
Abstract Results from the microscopic analysis of dielectric films on the surfaces of plasma-faced electrodes are presented. It is shown that thin films of 4–10 nm can cause unstable current flows that lead to the onset of auto-oscillations. Thick films of more than 50 nm undergo breakdowns accompan...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Gutorov, K. M. [verfasserIn] Vizgalov, I. V. [verfasserIn] Markina, E. A. [verfasserIn] Kurnaev, V. A. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2010 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Bulletin of the Russian Academy of Sciences - New York, NY : Allerton Press, 2007, 74(2010), 2 vom: Feb., Seite 188-191 |
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| Übergeordnetes Werk: |
volume:74 ; year:2010 ; number:2 ; month:02 ; pages:188-191 |
| Links: |
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| DOI / URN: |
10.3103/S106287381002019X |
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| Katalog-ID: |
SPR023154764 |
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| 520 | |a Abstract Results from the microscopic analysis of dielectric films on the surfaces of plasma-faced electrodes are presented. It is shown that thin films of 4–10 nm can cause unstable current flows that lead to the onset of auto-oscillations. Thick films of more than 50 nm undergo breakdowns accompanied by the evaporation of film material. | ||
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10.3103/S106287381002019X doi (DE-627)SPR023154764 (SPR)S106287381002019X-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Gutorov, K. M. verfasserin aut Influence of thin dielectric layers on electron emission and plasma-surface contact stability 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Results from the microscopic analysis of dielectric films on the surfaces of plasma-faced electrodes are presented. It is shown that thin films of 4–10 nm can cause unstable current flows that lead to the onset of auto-oscillations. Thick films of more than 50 nm undergo breakdowns accompanied by the evaporation of film material. Oxide Film (dpeaa)DE-He213 Dielectric Film (dpeaa)DE-He213 Silicon Oxide Film (dpeaa)DE-He213 Deposit Silicon Oxide (dpeaa)DE-He213 Calculated Thickness (dpeaa)DE-He213 Vizgalov, I. V. verfasserin aut Markina, E. A. verfasserin aut Kurnaev, V. A. verfasserin aut Enthalten in Bulletin of the Russian Academy of Sciences New York, NY : Allerton Press, 2007 74(2010), 2 vom: Feb., Seite 188-191 (DE-627)556723872 (DE-600)2403169-0 1934-9432 nnns volume:74 year:2010 number:2 month:02 pages:188-191 https://dx.doi.org/10.3103/S106287381002019X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 74 2010 2 02 188-191 |
| spelling |
10.3103/S106287381002019X doi (DE-627)SPR023154764 (SPR)S106287381002019X-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Gutorov, K. M. verfasserin aut Influence of thin dielectric layers on electron emission and plasma-surface contact stability 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Results from the microscopic analysis of dielectric films on the surfaces of plasma-faced electrodes are presented. It is shown that thin films of 4–10 nm can cause unstable current flows that lead to the onset of auto-oscillations. Thick films of more than 50 nm undergo breakdowns accompanied by the evaporation of film material. Oxide Film (dpeaa)DE-He213 Dielectric Film (dpeaa)DE-He213 Silicon Oxide Film (dpeaa)DE-He213 Deposit Silicon Oxide (dpeaa)DE-He213 Calculated Thickness (dpeaa)DE-He213 Vizgalov, I. V. verfasserin aut Markina, E. A. verfasserin aut Kurnaev, V. A. verfasserin aut Enthalten in Bulletin of the Russian Academy of Sciences New York, NY : Allerton Press, 2007 74(2010), 2 vom: Feb., Seite 188-191 (DE-627)556723872 (DE-600)2403169-0 1934-9432 nnns volume:74 year:2010 number:2 month:02 pages:188-191 https://dx.doi.org/10.3103/S106287381002019X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 74 2010 2 02 188-191 |
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10.3103/S106287381002019X doi (DE-627)SPR023154764 (SPR)S106287381002019X-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Gutorov, K. M. verfasserin aut Influence of thin dielectric layers on electron emission and plasma-surface contact stability 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Results from the microscopic analysis of dielectric films on the surfaces of plasma-faced electrodes are presented. It is shown that thin films of 4–10 nm can cause unstable current flows that lead to the onset of auto-oscillations. Thick films of more than 50 nm undergo breakdowns accompanied by the evaporation of film material. Oxide Film (dpeaa)DE-He213 Dielectric Film (dpeaa)DE-He213 Silicon Oxide Film (dpeaa)DE-He213 Deposit Silicon Oxide (dpeaa)DE-He213 Calculated Thickness (dpeaa)DE-He213 Vizgalov, I. V. verfasserin aut Markina, E. A. verfasserin aut Kurnaev, V. A. verfasserin aut Enthalten in Bulletin of the Russian Academy of Sciences New York, NY : Allerton Press, 2007 74(2010), 2 vom: Feb., Seite 188-191 (DE-627)556723872 (DE-600)2403169-0 1934-9432 nnns volume:74 year:2010 number:2 month:02 pages:188-191 https://dx.doi.org/10.3103/S106287381002019X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 74 2010 2 02 188-191 |
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10.3103/S106287381002019X doi (DE-627)SPR023154764 (SPR)S106287381002019X-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Gutorov, K. M. verfasserin aut Influence of thin dielectric layers on electron emission and plasma-surface contact stability 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Results from the microscopic analysis of dielectric films on the surfaces of plasma-faced electrodes are presented. It is shown that thin films of 4–10 nm can cause unstable current flows that lead to the onset of auto-oscillations. Thick films of more than 50 nm undergo breakdowns accompanied by the evaporation of film material. Oxide Film (dpeaa)DE-He213 Dielectric Film (dpeaa)DE-He213 Silicon Oxide Film (dpeaa)DE-He213 Deposit Silicon Oxide (dpeaa)DE-He213 Calculated Thickness (dpeaa)DE-He213 Vizgalov, I. V. verfasserin aut Markina, E. A. verfasserin aut Kurnaev, V. A. verfasserin aut Enthalten in Bulletin of the Russian Academy of Sciences New York, NY : Allerton Press, 2007 74(2010), 2 vom: Feb., Seite 188-191 (DE-627)556723872 (DE-600)2403169-0 1934-9432 nnns volume:74 year:2010 number:2 month:02 pages:188-191 https://dx.doi.org/10.3103/S106287381002019X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 74 2010 2 02 188-191 |
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Gutorov, K. M. @@aut@@ Vizgalov, I. V. @@aut@@ Markina, E. A. @@aut@@ Kurnaev, V. A. @@aut@@ |
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Abstract Results from the microscopic analysis of dielectric films on the surfaces of plasma-faced electrodes are presented. It is shown that thin films of 4–10 nm can cause unstable current flows that lead to the onset of auto-oscillations. Thick films of more than 50 nm undergo breakdowns accompanied by the evaporation of film material. |
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Abstract Results from the microscopic analysis of dielectric films on the surfaces of plasma-faced electrodes are presented. It is shown that thin films of 4–10 nm can cause unstable current flows that lead to the onset of auto-oscillations. Thick films of more than 50 nm undergo breakdowns accompanied by the evaporation of film material. |
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Abstract Results from the microscopic analysis of dielectric films on the surfaces of plasma-faced electrodes are presented. It is shown that thin films of 4–10 nm can cause unstable current flows that lead to the onset of auto-oscillations. Thick films of more than 50 nm undergo breakdowns accompanied by the evaporation of film material. |
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