Influence of the chemical structure of (co)polymer resists on their sensitivity to radiation

Abstract Resists operating via two mechanisms, i.e., disruption of the main chain and hydrolysis of side functional groups occurring upon EUV and electron beam irradiation, are studied as a function of the chemical composition of a polymer substrate. We show that the latter, belonging to the group o...
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Autor*in:	Bulgakova, S. A. [verfasserIn] Johns, M. M. [verfasserIn] Kiseleva, E. A. [verfasserIn] Skorokhodov, E. V. [verfasserIn] Pestov, A. E. [verfasserIn] Lopatin, A. Ya. [verfasserIn] Gusev, S. A. [verfasserIn] Luchin, V. I. [verfasserIn] Chkhalo, N. I. [verfasserIn] Salashchenko, N. N. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2012

Schlagwörter:	PMMA Methyl Ethyl Ketone Butyl Acrylate Diglyme

Übergeordnetes Werk:	Enthalten in: Bulletin of the Russian Academy of Sciences - New York, NY : Allerton Press, 2007, 76(2012), 2 vom: Feb., Seite 159-162
Übergeordnetes Werk:	volume:76 ; year:2012 ; number:2 ; month:02 ; pages:159-162

Links:	Volltext

DOI / URN:	10.3103/S1062873812020050

Katalog-ID:	SPR023162805

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520			\|a Abstract Resists operating via two mechanisms, i.e., disruption of the main chain and hydrolysis of side functional groups occurring upon EUV and electron beam irradiation, are studied as a function of the chemical composition of a polymer substrate. We show that the latter, belonging to the group of chemically amplified resists, are an order of magnitude more sensitive to radiation and possess outstanding contrast, as compared with disruptive type resists.
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700	1		\|a Johns, M. M. \|e verfasserin \|4 aut
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700	1		\|a Skorokhodov, E. V. \|e verfasserin \|4 aut
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700	1		\|a Lopatin, A. Ya. \|e verfasserin \|4 aut
700	1		\|a Gusev, S. A. \|e verfasserin \|4 aut
700	1		\|a Luchin, V. I. \|e verfasserin \|4 aut
700	1		\|a Chkhalo, N. I. \|e verfasserin \|4 aut
700	1		\|a Salashchenko, N. N. \|e verfasserin \|4 aut
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912			\|a GBV_ILN_101
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
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912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
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912			\|a GBV_ILN_2122
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912			\|a GBV_ILN_2143
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912			\|a GBV_ILN_2232
912			\|a GBV_ILN_2336
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912			\|a GBV_ILN_2470
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912			\|a GBV_ILN_4037
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912			\|a GBV_ILN_4112
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912			\|a GBV_ILN_4249
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912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
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Indexfelder

author_variant	s a b sa sab m m j mm mmj e a k ea eak e v s ev evs a e p ae aep a y l ay ayl s a g sa sag v i l vi vil n i c ni nic n n s nn nns
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hierarchy_sort_str	2012
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publishDate	2012
allfields	10.3103/S1062873812020050 doi (DE-627)SPR023162805 (SPR)S1062873812020050-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Bulgakova, S. A. verfasserin aut Influence of the chemical structure of (co)polymer resists on their sensitivity to radiation 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Resists operating via two mechanisms, i.e., disruption of the main chain and hydrolysis of side functional groups occurring upon EUV and electron beam irradiation, are studied as a function of the chemical composition of a polymer substrate. We show that the latter, belonging to the group of chemically amplified resists, are an order of magnitude more sensitive to radiation and possess outstanding contrast, as compared with disruptive type resists. PMMA (dpeaa)DE-He213 Methyl Ethyl Ketone (dpeaa)DE-He213 Butyl Acrylate (dpeaa)DE-He213 Butyl Acrylate (dpeaa)DE-He213 Diglyme (dpeaa)DE-He213 Johns, M. M. verfasserin aut Kiseleva, E. A. verfasserin aut Skorokhodov, E. V. verfasserin aut Pestov, A. E. verfasserin aut Lopatin, A. Ya. verfasserin aut Gusev, S. A. verfasserin aut Luchin, V. I. verfasserin aut Chkhalo, N. I. verfasserin aut Salashchenko, N. N. verfasserin aut Enthalten in Bulletin of the Russian Academy of Sciences New York, NY : Allerton Press, 2007 76(2012), 2 vom: Feb., Seite 159-162 (DE-627)556723872 (DE-600)2403169-0 1934-9432 nnns volume:76 year:2012 number:2 month:02 pages:159-162 https://dx.doi.org/10.3103/S1062873812020050 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 76 2012 2 02 159-162
spelling	10.3103/S1062873812020050 doi (DE-627)SPR023162805 (SPR)S1062873812020050-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Bulgakova, S. A. verfasserin aut Influence of the chemical structure of (co)polymer resists on their sensitivity to radiation 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Resists operating via two mechanisms, i.e., disruption of the main chain and hydrolysis of side functional groups occurring upon EUV and electron beam irradiation, are studied as a function of the chemical composition of a polymer substrate. We show that the latter, belonging to the group of chemically amplified resists, are an order of magnitude more sensitive to radiation and possess outstanding contrast, as compared with disruptive type resists. PMMA (dpeaa)DE-He213 Methyl Ethyl Ketone (dpeaa)DE-He213 Butyl Acrylate (dpeaa)DE-He213 Butyl Acrylate (dpeaa)DE-He213 Diglyme (dpeaa)DE-He213 Johns, M. M. verfasserin aut Kiseleva, E. A. verfasserin aut Skorokhodov, E. V. verfasserin aut Pestov, A. E. verfasserin aut Lopatin, A. Ya. verfasserin aut Gusev, S. A. verfasserin aut Luchin, V. I. verfasserin aut Chkhalo, N. I. verfasserin aut Salashchenko, N. N. verfasserin aut Enthalten in Bulletin of the Russian Academy of Sciences New York, NY : Allerton Press, 2007 76(2012), 2 vom: Feb., Seite 159-162 (DE-627)556723872 (DE-600)2403169-0 1934-9432 nnns volume:76 year:2012 number:2 month:02 pages:159-162 https://dx.doi.org/10.3103/S1062873812020050 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 76 2012 2 02 159-162
allfields_unstemmed	10.3103/S1062873812020050 doi (DE-627)SPR023162805 (SPR)S1062873812020050-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Bulgakova, S. A. verfasserin aut Influence of the chemical structure of (co)polymer resists on their sensitivity to radiation 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Resists operating via two mechanisms, i.e., disruption of the main chain and hydrolysis of side functional groups occurring upon EUV and electron beam irradiation, are studied as a function of the chemical composition of a polymer substrate. We show that the latter, belonging to the group of chemically amplified resists, are an order of magnitude more sensitive to radiation and possess outstanding contrast, as compared with disruptive type resists. PMMA (dpeaa)DE-He213 Methyl Ethyl Ketone (dpeaa)DE-He213 Butyl Acrylate (dpeaa)DE-He213 Butyl Acrylate (dpeaa)DE-He213 Diglyme (dpeaa)DE-He213 Johns, M. M. verfasserin aut Kiseleva, E. A. verfasserin aut Skorokhodov, E. V. verfasserin aut Pestov, A. E. verfasserin aut Lopatin, A. Ya. verfasserin aut Gusev, S. A. verfasserin aut Luchin, V. I. verfasserin aut Chkhalo, N. I. verfasserin aut Salashchenko, N. N. verfasserin aut Enthalten in Bulletin of the Russian Academy of Sciences New York, NY : Allerton Press, 2007 76(2012), 2 vom: Feb., Seite 159-162 (DE-627)556723872 (DE-600)2403169-0 1934-9432 nnns volume:76 year:2012 number:2 month:02 pages:159-162 https://dx.doi.org/10.3103/S1062873812020050 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 76 2012 2 02 159-162
allfieldsGer	10.3103/S1062873812020050 doi (DE-627)SPR023162805 (SPR)S1062873812020050-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Bulgakova, S. A. verfasserin aut Influence of the chemical structure of (co)polymer resists on their sensitivity to radiation 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Resists operating via two mechanisms, i.e., disruption of the main chain and hydrolysis of side functional groups occurring upon EUV and electron beam irradiation, are studied as a function of the chemical composition of a polymer substrate. We show that the latter, belonging to the group of chemically amplified resists, are an order of magnitude more sensitive to radiation and possess outstanding contrast, as compared with disruptive type resists. PMMA (dpeaa)DE-He213 Methyl Ethyl Ketone (dpeaa)DE-He213 Butyl Acrylate (dpeaa)DE-He213 Butyl Acrylate (dpeaa)DE-He213 Diglyme (dpeaa)DE-He213 Johns, M. M. verfasserin aut Kiseleva, E. A. verfasserin aut Skorokhodov, E. V. verfasserin aut Pestov, A. E. verfasserin aut Lopatin, A. Ya. verfasserin aut Gusev, S. A. verfasserin aut Luchin, V. I. verfasserin aut Chkhalo, N. I. verfasserin aut Salashchenko, N. N. verfasserin aut Enthalten in Bulletin of the Russian Academy of Sciences New York, NY : Allerton Press, 2007 76(2012), 2 vom: Feb., Seite 159-162 (DE-627)556723872 (DE-600)2403169-0 1934-9432 nnns volume:76 year:2012 number:2 month:02 pages:159-162 https://dx.doi.org/10.3103/S1062873812020050 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 76 2012 2 02 159-162
allfieldsSound	10.3103/S1062873812020050 doi (DE-627)SPR023162805 (SPR)S1062873812020050-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Bulgakova, S. A. verfasserin aut Influence of the chemical structure of (co)polymer resists on their sensitivity to radiation 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Resists operating via two mechanisms, i.e., disruption of the main chain and hydrolysis of side functional groups occurring upon EUV and electron beam irradiation, are studied as a function of the chemical composition of a polymer substrate. We show that the latter, belonging to the group of chemically amplified resists, are an order of magnitude more sensitive to radiation and possess outstanding contrast, as compared with disruptive type resists. PMMA (dpeaa)DE-He213 Methyl Ethyl Ketone (dpeaa)DE-He213 Butyl Acrylate (dpeaa)DE-He213 Butyl Acrylate (dpeaa)DE-He213 Diglyme (dpeaa)DE-He213 Johns, M. M. verfasserin aut Kiseleva, E. A. verfasserin aut Skorokhodov, E. V. verfasserin aut Pestov, A. E. verfasserin aut Lopatin, A. Ya. verfasserin aut Gusev, S. A. verfasserin aut Luchin, V. I. verfasserin aut Chkhalo, N. I. verfasserin aut Salashchenko, N. N. verfasserin aut Enthalten in Bulletin of the Russian Academy of Sciences New York, NY : Allerton Press, 2007 76(2012), 2 vom: Feb., Seite 159-162 (DE-627)556723872 (DE-600)2403169-0 1934-9432 nnns volume:76 year:2012 number:2 month:02 pages:159-162 https://dx.doi.org/10.3103/S1062873812020050 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 76 2012 2 02 159-162
language	English
source	Enthalten in Bulletin of the Russian Academy of Sciences 76(2012), 2 vom: Feb., Seite 159-162 volume:76 year:2012 number:2 month:02 pages:159-162
sourceStr	Enthalten in Bulletin of the Russian Academy of Sciences 76(2012), 2 vom: Feb., Seite 159-162 volume:76 year:2012 number:2 month:02 pages:159-162
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	PMMA Methyl Ethyl Ketone Butyl Acrylate Diglyme
dewey-raw	530
isfreeaccess_bool	false
container_title	Bulletin of the Russian Academy of Sciences
authorswithroles_txt_mv	Bulgakova, S. A. @@aut@@ Johns, M. M. @@aut@@ Kiseleva, E. A. @@aut@@ Skorokhodov, E. V. @@aut@@ Pestov, A. E. @@aut@@ Lopatin, A. Ya. @@aut@@ Gusev, S. A. @@aut@@ Luchin, V. I. @@aut@@ Chkhalo, N. I. @@aut@@ Salashchenko, N. N. @@aut@@
publishDateDaySort_date	2012-02-01T00:00:00Z
hierarchy_top_id	556723872
dewey-sort	3530
id	SPR023162805
language_de	englisch
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author	Bulgakova, S. A.
spellingShingle	Bulgakova, S. A. ddc 530 bkl 33.00 misc PMMA misc Methyl Ethyl Ketone misc Butyl Acrylate misc Diglyme Influence of the chemical structure of (co)polymer resists on their sensitivity to radiation
authorStr	Bulgakova, S. A.
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topic_title	530 ASE 33.00 bkl Influence of the chemical structure of (co)polymer resists on their sensitivity to radiation PMMA (dpeaa)DE-He213 Methyl Ethyl Ketone (dpeaa)DE-He213 Butyl Acrylate (dpeaa)DE-He213 Diglyme (dpeaa)DE-He213
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title	Influence of the chemical structure of (co)polymer resists on their sensitivity to radiation
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title_full	Influence of the chemical structure of (co)polymer resists on their sensitivity to radiation
author_sort	Bulgakova, S. A.
journal	Bulletin of the Russian Academy of Sciences
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author_browse	Bulgakova, S. A. Johns, M. M. Kiseleva, E. A. Skorokhodov, E. V. Pestov, A. E. Lopatin, A. Ya. Gusev, S. A. Luchin, V. I. Chkhalo, N. I. Salashchenko, N. N.
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author-letter	Bulgakova, S. A.
doi_str_mv	10.3103/S1062873812020050
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title_sort	influence of the chemical structure of (co)polymer resists on their sensitivity to radiation
title_auth	Influence of the chemical structure of (co)polymer resists on their sensitivity to radiation
abstract	Abstract Resists operating via two mechanisms, i.e., disruption of the main chain and hydrolysis of side functional groups occurring upon EUV and electron beam irradiation, are studied as a function of the chemical composition of a polymer substrate. We show that the latter, belonging to the group of chemically amplified resists, are an order of magnitude more sensitive to radiation and possess outstanding contrast, as compared with disruptive type resists.
abstractGer	Abstract Resists operating via two mechanisms, i.e., disruption of the main chain and hydrolysis of side functional groups occurring upon EUV and electron beam irradiation, are studied as a function of the chemical composition of a polymer substrate. We show that the latter, belonging to the group of chemically amplified resists, are an order of magnitude more sensitive to radiation and possess outstanding contrast, as compared with disruptive type resists.
abstract_unstemmed	Abstract Resists operating via two mechanisms, i.e., disruption of the main chain and hydrolysis of side functional groups occurring upon EUV and electron beam irradiation, are studied as a function of the chemical composition of a polymer substrate. We show that the latter, belonging to the group of chemically amplified resists, are an order of magnitude more sensitive to radiation and possess outstanding contrast, as compared with disruptive type resists.
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title_short	Influence of the chemical structure of (co)polymer resists on their sensitivity to radiation
url	https://dx.doi.org/10.3103/S1062873812020050
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author2	Johns, M. M. Kiseleva, E. A. Skorokhodov, E. V. Pestov, A. E. Lopatin, A. Ya Gusev, S. A. Luchin, V. I. Chkhalo, N. I. Salashchenko, N. N.
author2Str	Johns, M. M. Kiseleva, E. A. Skorokhodov, E. V. Pestov, A. E. Lopatin, A. Ya Gusev, S. A. Luchin, V. I. Chkhalo, N. I. Salashchenko, N. N.
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doi_str	10.3103/S1062873812020050
up_date	2024-07-03T17:15:57.414Z
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Influence of the chemical structure of (co)polymer resists on their sensitivity to radiation

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