Field-effect transistor based on ZnO:Li films
Abstract Field-effect transistors with n- and p-types of the channel on the base of ZnO:Li oxide films and $ MgF_{2} $ fluoride film as a gate insulator were prepared. The field effect as well as the UV radiation influence on the field effect in ZnO:Li thin films were investigated. Photoelectric cha...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Hovsepyan, R. B. [verfasserIn] Aghamalyan, N. R. [verfasserIn] Petrosyan, S. I. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2010 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of contemporary physics - New York, NY : Allerton, 2007, 45(2010), 6 vom: 14. Nov., Seite 262-268 |
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| Übergeordnetes Werk: |
volume:45 ; year:2010 ; number:6 ; day:14 ; month:11 ; pages:262-268 |
| Links: |
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| DOI / URN: |
10.3103/S1068337210060034 |
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| Katalog-ID: |
SPR023218339 |
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| 520 | |a Abstract Field-effect transistors with n- and p-types of the channel on the base of ZnO:Li oxide films and $ MgF_{2} $ fluoride film as a gate insulator were prepared. The field effect as well as the UV radiation influence on the field effect in ZnO:Li thin films were investigated. Photoelectric characteristics of the obtained thin-film field-effect transistors were studied. A mechanism of photoelectric amplification in the obtained transistors is proposed. | ||
| 650 | 4 | |a ZnO:Li film |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a field-effect transistor |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a photoelectric characteristics |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Aghamalyan, N. R. |e verfasserin |4 aut | |
| 700 | 1 | |a Petrosyan, S. I. |e verfasserin |4 aut | |
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10.3103/S1068337210060034 doi (DE-627)SPR023218339 (SPR)S1068337210060034-e DE-627 ger DE-627 rakwb eng 000 530 ASE 33.00 bkl Hovsepyan, R. B. verfasserin aut Field-effect transistor based on ZnO:Li films 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Field-effect transistors with n- and p-types of the channel on the base of ZnO:Li oxide films and $ MgF_{2} $ fluoride film as a gate insulator were prepared. The field effect as well as the UV radiation influence on the field effect in ZnO:Li thin films were investigated. Photoelectric characteristics of the obtained thin-film field-effect transistors were studied. A mechanism of photoelectric amplification in the obtained transistors is proposed. ZnO:Li film (dpeaa)DE-He213 field-effect transistor (dpeaa)DE-He213 photoelectric characteristics (dpeaa)DE-He213 Aghamalyan, N. R. verfasserin aut Petrosyan, S. I. verfasserin aut Enthalten in Journal of contemporary physics New York, NY : Allerton, 2007 45(2010), 6 vom: 14. Nov., Seite 262-268 (DE-627)535186991 (DE-600)2375751-6 1934-9378 nnns volume:45 year:2010 number:6 day:14 month:11 pages:262-268 https://dx.doi.org/10.3103/S1068337210060034 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 45 2010 6 14 11 262-268 |
| spelling |
10.3103/S1068337210060034 doi (DE-627)SPR023218339 (SPR)S1068337210060034-e DE-627 ger DE-627 rakwb eng 000 530 ASE 33.00 bkl Hovsepyan, R. B. verfasserin aut Field-effect transistor based on ZnO:Li films 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Field-effect transistors with n- and p-types of the channel on the base of ZnO:Li oxide films and $ MgF_{2} $ fluoride film as a gate insulator were prepared. The field effect as well as the UV radiation influence on the field effect in ZnO:Li thin films were investigated. Photoelectric characteristics of the obtained thin-film field-effect transistors were studied. A mechanism of photoelectric amplification in the obtained transistors is proposed. ZnO:Li film (dpeaa)DE-He213 field-effect transistor (dpeaa)DE-He213 photoelectric characteristics (dpeaa)DE-He213 Aghamalyan, N. R. verfasserin aut Petrosyan, S. I. verfasserin aut Enthalten in Journal of contemporary physics New York, NY : Allerton, 2007 45(2010), 6 vom: 14. Nov., Seite 262-268 (DE-627)535186991 (DE-600)2375751-6 1934-9378 nnns volume:45 year:2010 number:6 day:14 month:11 pages:262-268 https://dx.doi.org/10.3103/S1068337210060034 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 45 2010 6 14 11 262-268 |
| allfields_unstemmed |
10.3103/S1068337210060034 doi (DE-627)SPR023218339 (SPR)S1068337210060034-e DE-627 ger DE-627 rakwb eng 000 530 ASE 33.00 bkl Hovsepyan, R. B. verfasserin aut Field-effect transistor based on ZnO:Li films 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Field-effect transistors with n- and p-types of the channel on the base of ZnO:Li oxide films and $ MgF_{2} $ fluoride film as a gate insulator were prepared. The field effect as well as the UV radiation influence on the field effect in ZnO:Li thin films were investigated. Photoelectric characteristics of the obtained thin-film field-effect transistors were studied. A mechanism of photoelectric amplification in the obtained transistors is proposed. ZnO:Li film (dpeaa)DE-He213 field-effect transistor (dpeaa)DE-He213 photoelectric characteristics (dpeaa)DE-He213 Aghamalyan, N. R. verfasserin aut Petrosyan, S. I. verfasserin aut Enthalten in Journal of contemporary physics New York, NY : Allerton, 2007 45(2010), 6 vom: 14. Nov., Seite 262-268 (DE-627)535186991 (DE-600)2375751-6 1934-9378 nnns volume:45 year:2010 number:6 day:14 month:11 pages:262-268 https://dx.doi.org/10.3103/S1068337210060034 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 45 2010 6 14 11 262-268 |
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10.3103/S1068337210060034 doi (DE-627)SPR023218339 (SPR)S1068337210060034-e DE-627 ger DE-627 rakwb eng 000 530 ASE 33.00 bkl Hovsepyan, R. B. verfasserin aut Field-effect transistor based on ZnO:Li films 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Field-effect transistors with n- and p-types of the channel on the base of ZnO:Li oxide films and $ MgF_{2} $ fluoride film as a gate insulator were prepared. The field effect as well as the UV radiation influence on the field effect in ZnO:Li thin films were investigated. Photoelectric characteristics of the obtained thin-film field-effect transistors were studied. A mechanism of photoelectric amplification in the obtained transistors is proposed. ZnO:Li film (dpeaa)DE-He213 field-effect transistor (dpeaa)DE-He213 photoelectric characteristics (dpeaa)DE-He213 Aghamalyan, N. R. verfasserin aut Petrosyan, S. I. verfasserin aut Enthalten in Journal of contemporary physics New York, NY : Allerton, 2007 45(2010), 6 vom: 14. Nov., Seite 262-268 (DE-627)535186991 (DE-600)2375751-6 1934-9378 nnns volume:45 year:2010 number:6 day:14 month:11 pages:262-268 https://dx.doi.org/10.3103/S1068337210060034 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 45 2010 6 14 11 262-268 |
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10.3103/S1068337210060034 doi (DE-627)SPR023218339 (SPR)S1068337210060034-e DE-627 ger DE-627 rakwb eng 000 530 ASE 33.00 bkl Hovsepyan, R. B. verfasserin aut Field-effect transistor based on ZnO:Li films 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Field-effect transistors with n- and p-types of the channel on the base of ZnO:Li oxide films and $ MgF_{2} $ fluoride film as a gate insulator were prepared. The field effect as well as the UV radiation influence on the field effect in ZnO:Li thin films were investigated. Photoelectric characteristics of the obtained thin-film field-effect transistors were studied. A mechanism of photoelectric amplification in the obtained transistors is proposed. ZnO:Li film (dpeaa)DE-He213 field-effect transistor (dpeaa)DE-He213 photoelectric characteristics (dpeaa)DE-He213 Aghamalyan, N. R. verfasserin aut Petrosyan, S. I. verfasserin aut Enthalten in Journal of contemporary physics New York, NY : Allerton, 2007 45(2010), 6 vom: 14. Nov., Seite 262-268 (DE-627)535186991 (DE-600)2375751-6 1934-9378 nnns volume:45 year:2010 number:6 day:14 month:11 pages:262-268 https://dx.doi.org/10.3103/S1068337210060034 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 45 2010 6 14 11 262-268 |
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Enthalten in Journal of contemporary physics 45(2010), 6 vom: 14. Nov., Seite 262-268 volume:45 year:2010 number:6 day:14 month:11 pages:262-268 |
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Hovsepyan, R. B. @@aut@@ Aghamalyan, N. R. @@aut@@ Petrosyan, S. I. @@aut@@ |
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Hovsepyan, R. B. |
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Hovsepyan, R. B. ddc 000 bkl 33.00 misc ZnO:Li film misc field-effect transistor misc photoelectric characteristics Field-effect transistor based on ZnO:Li films |
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000 530 ASE 33.00 bkl Field-effect transistor based on ZnO:Li films ZnO:Li film (dpeaa)DE-He213 field-effect transistor (dpeaa)DE-He213 photoelectric characteristics (dpeaa)DE-He213 |
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Field-effect transistor based on ZnO:Li films |
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Hovsepyan, R. B. |
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field-effect transistor based on zno:li films |
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Field-effect transistor based on ZnO:Li films |
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Abstract Field-effect transistors with n- and p-types of the channel on the base of ZnO:Li oxide films and $ MgF_{2} $ fluoride film as a gate insulator were prepared. The field effect as well as the UV radiation influence on the field effect in ZnO:Li thin films were investigated. Photoelectric characteristics of the obtained thin-film field-effect transistors were studied. A mechanism of photoelectric amplification in the obtained transistors is proposed. |
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Abstract Field-effect transistors with n- and p-types of the channel on the base of ZnO:Li oxide films and $ MgF_{2} $ fluoride film as a gate insulator were prepared. The field effect as well as the UV radiation influence on the field effect in ZnO:Li thin films were investigated. Photoelectric characteristics of the obtained thin-film field-effect transistors were studied. A mechanism of photoelectric amplification in the obtained transistors is proposed. |
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Abstract Field-effect transistors with n- and p-types of the channel on the base of ZnO:Li oxide films and $ MgF_{2} $ fluoride film as a gate insulator were prepared. The field effect as well as the UV radiation influence on the field effect in ZnO:Li thin films were investigated. Photoelectric characteristics of the obtained thin-film field-effect transistors were studied. A mechanism of photoelectric amplification in the obtained transistors is proposed. |
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