Simulation of the Thermal State of Self-Excited Voltage Source Inverters

Abstract A brief survey of self-excited voltage source inverters suitable for use as a parts of traction frequency converters is carried out. The power loss for two-level and two types of three-level voltage source inverters (an inverter with clamping diodes and a cascaded inverter) and capacitors w...
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Autor*in:	Inkov, Yu. M. [verfasserIn] Kosmodamianskiy, A. S. [verfasserIn] Klyachko, L. M. [verfasserIn] Pugachev, A. A. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Übergeordnetes Werk:	Enthalten in: Russian electrical engineering - New York, NY : Allerton, 2007, 90(2019), 9 vom: Sept., Seite 620-624
Übergeordnetes Werk:	volume:90 ; year:2019 ; number:9 ; month:09 ; pages:620-624

Links:	Volltext

DOI / URN:	10.3103/S1068371219090074

Katalog-ID:	SPR023391367

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520			\|a Abstract A brief survey of self-excited voltage source inverters suitable for use as a parts of traction frequency converters is carried out. The power loss for two-level and two types of three-level voltage source inverters (an inverter with clamping diodes and a cascaded inverter) and capacitors with a direct current link are determined. The parameters of power keys correspond to the parameters of the keys of FF300R12ME4 and F3L300R07PE4 modules. It is shown that, despite a greater quantity of semiconductor elements and capacitors in the three-level inverter with clamping diodes, it can be recommended for use in modern traction electric drives, as it is more energy efficient than the two-level inverter. Equivalent thermal circuits for semiconductor keys with one- and two-directed current conductivity are presented. On their basis, equivalent thermal circuits for two- and three-level inverters with clamping diodes are synthesized and the corresponding heat-balance equations are derived. The simulation results are presented in the MATLAB/Simulink environment, and the distribution of temperatures between different transistors and diodes of power modules is shown. The boundary switching frequency is established at which the maximum temperatures of two- and three-level inverters coincide.
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912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
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912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
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912			\|a GBV_ILN_2108
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912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
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912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2122
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912			\|a GBV_ILN_2143
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912			\|a GBV_ILN_2336
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912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_2548
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allfields	10.3103/S1068371219090074 doi (DE-627)SPR023391367 (SPR)S1068371219090074-e DE-627 ger DE-627 rakwb eng 620 ASE Inkov, Yu. M. verfasserin aut Simulation of the Thermal State of Self-Excited Voltage Source Inverters 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A brief survey of self-excited voltage source inverters suitable for use as a parts of traction frequency converters is carried out. The power loss for two-level and two types of three-level voltage source inverters (an inverter with clamping diodes and a cascaded inverter) and capacitors with a direct current link are determined. The parameters of power keys correspond to the parameters of the keys of FF300R12ME4 and F3L300R07PE4 modules. It is shown that, despite a greater quantity of semiconductor elements and capacitors in the three-level inverter with clamping diodes, it can be recommended for use in modern traction electric drives, as it is more energy efficient than the two-level inverter. Equivalent thermal circuits for semiconductor keys with one- and two-directed current conductivity are presented. On their basis, equivalent thermal circuits for two- and three-level inverters with clamping diodes are synthesized and the corresponding heat-balance equations are derived. The simulation results are presented in the MATLAB/Simulink environment, and the distribution of temperatures between different transistors and diodes of power modules is shown. The boundary switching frequency is established at which the maximum temperatures of two- and three-level inverters coincide. Kosmodamianskiy, A. S. verfasserin aut Klyachko, L. M. verfasserin aut Pugachev, A. A. verfasserin aut Enthalten in Russian electrical engineering New York, NY : Allerton, 2007 90(2019), 9 vom: Sept., Seite 620-624 (DE-627)531200272 (DE-600)2322646-8 1934-8010 nnns volume:90 year:2019 number:9 month:09 pages:620-624 https://dx.doi.org/10.3103/S1068371219090074 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 90 2019 9 09 620-624
spelling	10.3103/S1068371219090074 doi (DE-627)SPR023391367 (SPR)S1068371219090074-e DE-627 ger DE-627 rakwb eng 620 ASE Inkov, Yu. M. verfasserin aut Simulation of the Thermal State of Self-Excited Voltage Source Inverters 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A brief survey of self-excited voltage source inverters suitable for use as a parts of traction frequency converters is carried out. The power loss for two-level and two types of three-level voltage source inverters (an inverter with clamping diodes and a cascaded inverter) and capacitors with a direct current link are determined. The parameters of power keys correspond to the parameters of the keys of FF300R12ME4 and F3L300R07PE4 modules. It is shown that, despite a greater quantity of semiconductor elements and capacitors in the three-level inverter with clamping diodes, it can be recommended for use in modern traction electric drives, as it is more energy efficient than the two-level inverter. Equivalent thermal circuits for semiconductor keys with one- and two-directed current conductivity are presented. On their basis, equivalent thermal circuits for two- and three-level inverters with clamping diodes are synthesized and the corresponding heat-balance equations are derived. The simulation results are presented in the MATLAB/Simulink environment, and the distribution of temperatures between different transistors and diodes of power modules is shown. The boundary switching frequency is established at which the maximum temperatures of two- and three-level inverters coincide. Kosmodamianskiy, A. S. verfasserin aut Klyachko, L. M. verfasserin aut Pugachev, A. A. verfasserin aut Enthalten in Russian electrical engineering New York, NY : Allerton, 2007 90(2019), 9 vom: Sept., Seite 620-624 (DE-627)531200272 (DE-600)2322646-8 1934-8010 nnns volume:90 year:2019 number:9 month:09 pages:620-624 https://dx.doi.org/10.3103/S1068371219090074 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 90 2019 9 09 620-624
allfields_unstemmed	10.3103/S1068371219090074 doi (DE-627)SPR023391367 (SPR)S1068371219090074-e DE-627 ger DE-627 rakwb eng 620 ASE Inkov, Yu. M. verfasserin aut Simulation of the Thermal State of Self-Excited Voltage Source Inverters 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A brief survey of self-excited voltage source inverters suitable for use as a parts of traction frequency converters is carried out. The power loss for two-level and two types of three-level voltage source inverters (an inverter with clamping diodes and a cascaded inverter) and capacitors with a direct current link are determined. The parameters of power keys correspond to the parameters of the keys of FF300R12ME4 and F3L300R07PE4 modules. It is shown that, despite a greater quantity of semiconductor elements and capacitors in the three-level inverter with clamping diodes, it can be recommended for use in modern traction electric drives, as it is more energy efficient than the two-level inverter. Equivalent thermal circuits for semiconductor keys with one- and two-directed current conductivity are presented. On their basis, equivalent thermal circuits for two- and three-level inverters with clamping diodes are synthesized and the corresponding heat-balance equations are derived. The simulation results are presented in the MATLAB/Simulink environment, and the distribution of temperatures between different transistors and diodes of power modules is shown. The boundary switching frequency is established at which the maximum temperatures of two- and three-level inverters coincide. Kosmodamianskiy, A. S. verfasserin aut Klyachko, L. M. verfasserin aut Pugachev, A. A. verfasserin aut Enthalten in Russian electrical engineering New York, NY : Allerton, 2007 90(2019), 9 vom: Sept., Seite 620-624 (DE-627)531200272 (DE-600)2322646-8 1934-8010 nnns volume:90 year:2019 number:9 month:09 pages:620-624 https://dx.doi.org/10.3103/S1068371219090074 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 90 2019 9 09 620-624
allfieldsGer	10.3103/S1068371219090074 doi (DE-627)SPR023391367 (SPR)S1068371219090074-e DE-627 ger DE-627 rakwb eng 620 ASE Inkov, Yu. M. verfasserin aut Simulation of the Thermal State of Self-Excited Voltage Source Inverters 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A brief survey of self-excited voltage source inverters suitable for use as a parts of traction frequency converters is carried out. The power loss for two-level and two types of three-level voltage source inverters (an inverter with clamping diodes and a cascaded inverter) and capacitors with a direct current link are determined. The parameters of power keys correspond to the parameters of the keys of FF300R12ME4 and F3L300R07PE4 modules. It is shown that, despite a greater quantity of semiconductor elements and capacitors in the three-level inverter with clamping diodes, it can be recommended for use in modern traction electric drives, as it is more energy efficient than the two-level inverter. Equivalent thermal circuits for semiconductor keys with one- and two-directed current conductivity are presented. On their basis, equivalent thermal circuits for two- and three-level inverters with clamping diodes are synthesized and the corresponding heat-balance equations are derived. The simulation results are presented in the MATLAB/Simulink environment, and the distribution of temperatures between different transistors and diodes of power modules is shown. The boundary switching frequency is established at which the maximum temperatures of two- and three-level inverters coincide. Kosmodamianskiy, A. S. verfasserin aut Klyachko, L. M. verfasserin aut Pugachev, A. A. verfasserin aut Enthalten in Russian electrical engineering New York, NY : Allerton, 2007 90(2019), 9 vom: Sept., Seite 620-624 (DE-627)531200272 (DE-600)2322646-8 1934-8010 nnns volume:90 year:2019 number:9 month:09 pages:620-624 https://dx.doi.org/10.3103/S1068371219090074 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 90 2019 9 09 620-624
allfieldsSound	10.3103/S1068371219090074 doi (DE-627)SPR023391367 (SPR)S1068371219090074-e DE-627 ger DE-627 rakwb eng 620 ASE Inkov, Yu. M. verfasserin aut Simulation of the Thermal State of Self-Excited Voltage Source Inverters 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A brief survey of self-excited voltage source inverters suitable for use as a parts of traction frequency converters is carried out. The power loss for two-level and two types of three-level voltage source inverters (an inverter with clamping diodes and a cascaded inverter) and capacitors with a direct current link are determined. The parameters of power keys correspond to the parameters of the keys of FF300R12ME4 and F3L300R07PE4 modules. It is shown that, despite a greater quantity of semiconductor elements and capacitors in the three-level inverter with clamping diodes, it can be recommended for use in modern traction electric drives, as it is more energy efficient than the two-level inverter. Equivalent thermal circuits for semiconductor keys with one- and two-directed current conductivity are presented. On their basis, equivalent thermal circuits for two- and three-level inverters with clamping diodes are synthesized and the corresponding heat-balance equations are derived. The simulation results are presented in the MATLAB/Simulink environment, and the distribution of temperatures between different transistors and diodes of power modules is shown. The boundary switching frequency is established at which the maximum temperatures of two- and three-level inverters coincide. Kosmodamianskiy, A. S. verfasserin aut Klyachko, L. M. verfasserin aut Pugachev, A. A. verfasserin aut Enthalten in Russian electrical engineering New York, NY : Allerton, 2007 90(2019), 9 vom: Sept., Seite 620-624 (DE-627)531200272 (DE-600)2322646-8 1934-8010 nnns volume:90 year:2019 number:9 month:09 pages:620-624 https://dx.doi.org/10.3103/S1068371219090074 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 90 2019 9 09 620-624
language	English
source	Enthalten in Russian electrical engineering 90(2019), 9 vom: Sept., Seite 620-624 volume:90 year:2019 number:9 month:09 pages:620-624
sourceStr	Enthalten in Russian electrical engineering 90(2019), 9 vom: Sept., Seite 620-624 volume:90 year:2019 number:9 month:09 pages:620-624
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institution	findex.gbv.de
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container_title	Russian electrical engineering
authorswithroles_txt_mv	Inkov, Yu. M. @@aut@@ Kosmodamianskiy, A. S. @@aut@@ Klyachko, L. M. @@aut@@ Pugachev, A. A. @@aut@@
publishDateDaySort_date	2019-09-01T00:00:00Z
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author	Inkov, Yu. M.
spellingShingle	Inkov, Yu. M. ddc 620 Simulation of the Thermal State of Self-Excited Voltage Source Inverters
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title	Simulation of the Thermal State of Self-Excited Voltage Source Inverters
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title_full	Simulation of the Thermal State of Self-Excited Voltage Source Inverters
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title_sort	simulation of the thermal state of self-excited voltage source inverters
title_auth	Simulation of the Thermal State of Self-Excited Voltage Source Inverters
abstract	Abstract A brief survey of self-excited voltage source inverters suitable for use as a parts of traction frequency converters is carried out. The power loss for two-level and two types of three-level voltage source inverters (an inverter with clamping diodes and a cascaded inverter) and capacitors with a direct current link are determined. The parameters of power keys correspond to the parameters of the keys of FF300R12ME4 and F3L300R07PE4 modules. It is shown that, despite a greater quantity of semiconductor elements and capacitors in the three-level inverter with clamping diodes, it can be recommended for use in modern traction electric drives, as it is more energy efficient than the two-level inverter. Equivalent thermal circuits for semiconductor keys with one- and two-directed current conductivity are presented. On their basis, equivalent thermal circuits for two- and three-level inverters with clamping diodes are synthesized and the corresponding heat-balance equations are derived. The simulation results are presented in the MATLAB/Simulink environment, and the distribution of temperatures between different transistors and diodes of power modules is shown. The boundary switching frequency is established at which the maximum temperatures of two- and three-level inverters coincide.
abstractGer	Abstract A brief survey of self-excited voltage source inverters suitable for use as a parts of traction frequency converters is carried out. The power loss for two-level and two types of three-level voltage source inverters (an inverter with clamping diodes and a cascaded inverter) and capacitors with a direct current link are determined. The parameters of power keys correspond to the parameters of the keys of FF300R12ME4 and F3L300R07PE4 modules. It is shown that, despite a greater quantity of semiconductor elements and capacitors in the three-level inverter with clamping diodes, it can be recommended for use in modern traction electric drives, as it is more energy efficient than the two-level inverter. Equivalent thermal circuits for semiconductor keys with one- and two-directed current conductivity are presented. On their basis, equivalent thermal circuits for two- and three-level inverters with clamping diodes are synthesized and the corresponding heat-balance equations are derived. The simulation results are presented in the MATLAB/Simulink environment, and the distribution of temperatures between different transistors and diodes of power modules is shown. The boundary switching frequency is established at which the maximum temperatures of two- and three-level inverters coincide.
abstract_unstemmed	Abstract A brief survey of self-excited voltage source inverters suitable for use as a parts of traction frequency converters is carried out. The power loss for two-level and two types of three-level voltage source inverters (an inverter with clamping diodes and a cascaded inverter) and capacitors with a direct current link are determined. The parameters of power keys correspond to the parameters of the keys of FF300R12ME4 and F3L300R07PE4 modules. It is shown that, despite a greater quantity of semiconductor elements and capacitors in the three-level inverter with clamping diodes, it can be recommended for use in modern traction electric drives, as it is more energy efficient than the two-level inverter. Equivalent thermal circuits for semiconductor keys with one- and two-directed current conductivity are presented. On their basis, equivalent thermal circuits for two- and three-level inverters with clamping diodes are synthesized and the corresponding heat-balance equations are derived. The simulation results are presented in the MATLAB/Simulink environment, and the distribution of temperatures between different transistors and diodes of power modules is shown. The boundary switching frequency is established at which the maximum temperatures of two- and three-level inverters coincide.
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title_short	Simulation of the Thermal State of Self-Excited Voltage Source Inverters
url	https://dx.doi.org/10.3103/S1068371219090074
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doi_str	10.3103/S1068371219090074
up_date	2024-07-03T18:39:39.524Z
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M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Simulation of the Thermal State of Self-Excited Voltage Source Inverters</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract A brief survey of self-excited voltage source inverters suitable for use as a parts of traction frequency converters is carried out. The power loss for two-level and two types of three-level voltage source inverters (an inverter with clamping diodes and a cascaded inverter) and capacitors with a direct current link are determined. The parameters of power keys correspond to the parameters of the keys of FF300R12ME4 and F3L300R07PE4 modules. It is shown that, despite a greater quantity of semiconductor elements and capacitors in the three-level inverter with clamping diodes, it can be recommended for use in modern traction electric drives, as it is more energy efficient than the two-level inverter. Equivalent thermal circuits for semiconductor keys with one- and two-directed current conductivity are presented. On their basis, equivalent thermal circuits for two- and three-level inverters with clamping diodes are synthesized and the corresponding heat-balance equations are derived. The simulation results are presented in the MATLAB/Simulink environment, and the distribution of temperatures between different transistors and diodes of power modules is shown. The boundary switching frequency is established at which the maximum temperatures of two- and three-level inverters coincide.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kosmodamianskiy, A. S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Klyachko, L. M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pugachev, A. 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Simulation of the Thermal State of Self-Excited Voltage Source Inverters

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