RETRACTED ARTICLE: High resolution transmission electron microscope studies of a-Si:H solar cells
Abstract Hydrogenated amorphous silicon (a-Si:H) single junction solar cells with high open circuit voltage (Voc) are fabricated using a wide bandgap boron-doped Si:H p-layer deposited at high hydrogen dilution, low substrate temperature and with $ H_{2} $-plasma treatment that promotes nanocrystall...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Yusoff, A. R. M. [verfasserIn] Syahrul, M. N. [verfasserIn] Henkel, K. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2007 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Pramāna - Bangalore : Indian Inst. of Science, 1973, 68(2007), 6 vom: Juni, Seite 995-999 |
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| Übergeordnetes Werk: |
volume:68 ; year:2007 ; number:6 ; month:06 ; pages:995-999 |
| Links: |
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| DOI / URN: |
10.1007/s12043-007-0098-1 |
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| Katalog-ID: |
SPR024370053 |
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| 520 | |a Abstract Hydrogenated amorphous silicon (a-Si:H) single junction solar cells with high open circuit voltage (Voc) are fabricated using a wide bandgap boron-doped Si:H p-layer deposited at high hydrogen dilution, low substrate temperature and with $ H_{2} $-plasma treatment that promotes nanocrystalline silicon (nc-Si:H) formation. This paper presents the structure of this p-type material characterized by high resolution transmission electron microscope (HRTEM). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains fine-grained nc-Si:H embedded in a-Si:H matrix. | ||
| 650 | 4 | |a Hydrogenated amorphous silicon |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a hydrogen dilution |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a low substrate temperature |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Syahrul, M. N. |e verfasserin |4 aut | |
| 700 | 1 | |a Henkel, K. |e verfasserin |4 aut | |
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10.1007/s12043-007-0098-1 doi (DE-627)SPR024370053 (SPR)s12043-007-0098-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Yusoff, A. R. M. verfasserin aut RETRACTED ARTICLE: High resolution transmission electron microscope studies of a-Si:H solar cells 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Hydrogenated amorphous silicon (a-Si:H) single junction solar cells with high open circuit voltage (Voc) are fabricated using a wide bandgap boron-doped Si:H p-layer deposited at high hydrogen dilution, low substrate temperature and with $ H_{2} $-plasma treatment that promotes nanocrystalline silicon (nc-Si:H) formation. This paper presents the structure of this p-type material characterized by high resolution transmission electron microscope (HRTEM). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains fine-grained nc-Si:H embedded in a-Si:H matrix. Hydrogenated amorphous silicon (dpeaa)DE-He213 hydrogen dilution (dpeaa)DE-He213 low substrate temperature (dpeaa)DE-He213 Syahrul, M. N. verfasserin aut Henkel, K. verfasserin aut Enthalten in Pramāna Bangalore : Indian Inst. of Science, 1973 68(2007), 6 vom: Juni, Seite 995-999 (DE-627)328820806 (DE-600)2046354-6 0973-7111 nnns volume:68 year:2007 number:6 month:06 pages:995-999 https://dx.doi.org/10.1007/s12043-007-0098-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 68 2007 6 06 995-999 |
| spelling |
10.1007/s12043-007-0098-1 doi (DE-627)SPR024370053 (SPR)s12043-007-0098-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Yusoff, A. R. M. verfasserin aut RETRACTED ARTICLE: High resolution transmission electron microscope studies of a-Si:H solar cells 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Hydrogenated amorphous silicon (a-Si:H) single junction solar cells with high open circuit voltage (Voc) are fabricated using a wide bandgap boron-doped Si:H p-layer deposited at high hydrogen dilution, low substrate temperature and with $ H_{2} $-plasma treatment that promotes nanocrystalline silicon (nc-Si:H) formation. This paper presents the structure of this p-type material characterized by high resolution transmission electron microscope (HRTEM). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains fine-grained nc-Si:H embedded in a-Si:H matrix. Hydrogenated amorphous silicon (dpeaa)DE-He213 hydrogen dilution (dpeaa)DE-He213 low substrate temperature (dpeaa)DE-He213 Syahrul, M. N. verfasserin aut Henkel, K. verfasserin aut Enthalten in Pramāna Bangalore : Indian Inst. of Science, 1973 68(2007), 6 vom: Juni, Seite 995-999 (DE-627)328820806 (DE-600)2046354-6 0973-7111 nnns volume:68 year:2007 number:6 month:06 pages:995-999 https://dx.doi.org/10.1007/s12043-007-0098-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 68 2007 6 06 995-999 |
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10.1007/s12043-007-0098-1 doi (DE-627)SPR024370053 (SPR)s12043-007-0098-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Yusoff, A. R. M. verfasserin aut RETRACTED ARTICLE: High resolution transmission electron microscope studies of a-Si:H solar cells 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Hydrogenated amorphous silicon (a-Si:H) single junction solar cells with high open circuit voltage (Voc) are fabricated using a wide bandgap boron-doped Si:H p-layer deposited at high hydrogen dilution, low substrate temperature and with $ H_{2} $-plasma treatment that promotes nanocrystalline silicon (nc-Si:H) formation. This paper presents the structure of this p-type material characterized by high resolution transmission electron microscope (HRTEM). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains fine-grained nc-Si:H embedded in a-Si:H matrix. Hydrogenated amorphous silicon (dpeaa)DE-He213 hydrogen dilution (dpeaa)DE-He213 low substrate temperature (dpeaa)DE-He213 Syahrul, M. N. verfasserin aut Henkel, K. verfasserin aut Enthalten in Pramāna Bangalore : Indian Inst. of Science, 1973 68(2007), 6 vom: Juni, Seite 995-999 (DE-627)328820806 (DE-600)2046354-6 0973-7111 nnns volume:68 year:2007 number:6 month:06 pages:995-999 https://dx.doi.org/10.1007/s12043-007-0098-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 68 2007 6 06 995-999 |
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10.1007/s12043-007-0098-1 doi (DE-627)SPR024370053 (SPR)s12043-007-0098-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Yusoff, A. R. M. verfasserin aut RETRACTED ARTICLE: High resolution transmission electron microscope studies of a-Si:H solar cells 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Hydrogenated amorphous silicon (a-Si:H) single junction solar cells with high open circuit voltage (Voc) are fabricated using a wide bandgap boron-doped Si:H p-layer deposited at high hydrogen dilution, low substrate temperature and with $ H_{2} $-plasma treatment that promotes nanocrystalline silicon (nc-Si:H) formation. This paper presents the structure of this p-type material characterized by high resolution transmission electron microscope (HRTEM). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains fine-grained nc-Si:H embedded in a-Si:H matrix. Hydrogenated amorphous silicon (dpeaa)DE-He213 hydrogen dilution (dpeaa)DE-He213 low substrate temperature (dpeaa)DE-He213 Syahrul, M. N. verfasserin aut Henkel, K. verfasserin aut Enthalten in Pramāna Bangalore : Indian Inst. of Science, 1973 68(2007), 6 vom: Juni, Seite 995-999 (DE-627)328820806 (DE-600)2046354-6 0973-7111 nnns volume:68 year:2007 number:6 month:06 pages:995-999 https://dx.doi.org/10.1007/s12043-007-0098-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 68 2007 6 06 995-999 |
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10.1007/s12043-007-0098-1 doi (DE-627)SPR024370053 (SPR)s12043-007-0098-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Yusoff, A. R. M. verfasserin aut RETRACTED ARTICLE: High resolution transmission electron microscope studies of a-Si:H solar cells 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Hydrogenated amorphous silicon (a-Si:H) single junction solar cells with high open circuit voltage (Voc) are fabricated using a wide bandgap boron-doped Si:H p-layer deposited at high hydrogen dilution, low substrate temperature and with $ H_{2} $-plasma treatment that promotes nanocrystalline silicon (nc-Si:H) formation. This paper presents the structure of this p-type material characterized by high resolution transmission electron microscope (HRTEM). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains fine-grained nc-Si:H embedded in a-Si:H matrix. Hydrogenated amorphous silicon (dpeaa)DE-He213 hydrogen dilution (dpeaa)DE-He213 low substrate temperature (dpeaa)DE-He213 Syahrul, M. N. verfasserin aut Henkel, K. verfasserin aut Enthalten in Pramāna Bangalore : Indian Inst. of Science, 1973 68(2007), 6 vom: Juni, Seite 995-999 (DE-627)328820806 (DE-600)2046354-6 0973-7111 nnns volume:68 year:2007 number:6 month:06 pages:995-999 https://dx.doi.org/10.1007/s12043-007-0098-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 68 2007 6 06 995-999 |
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Yusoff, A. R. M. |
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Yusoff, A. R. M. ddc 530 bkl 33.00 misc Hydrogenated amorphous silicon misc hydrogen dilution misc low substrate temperature RETRACTED ARTICLE: High resolution transmission electron microscope studies of a-Si:H solar cells |
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530 ASE 33.00 bkl RETRACTED ARTICLE: High resolution transmission electron microscope studies of a-Si:H solar cells Hydrogenated amorphous silicon (dpeaa)DE-He213 hydrogen dilution (dpeaa)DE-He213 low substrate temperature (dpeaa)DE-He213 |
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ddc 530 bkl 33.00 misc Hydrogenated amorphous silicon misc hydrogen dilution misc low substrate temperature |
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RETRACTED ARTICLE: High resolution transmission electron microscope studies of a-Si:H solar cells |
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retracted article: high resolution transmission electron microscope studies of a-si:h solar cells |
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RETRACTED ARTICLE: High resolution transmission electron microscope studies of a-Si:H solar cells |
| abstract |
Abstract Hydrogenated amorphous silicon (a-Si:H) single junction solar cells with high open circuit voltage (Voc) are fabricated using a wide bandgap boron-doped Si:H p-layer deposited at high hydrogen dilution, low substrate temperature and with $ H_{2} $-plasma treatment that promotes nanocrystalline silicon (nc-Si:H) formation. This paper presents the structure of this p-type material characterized by high resolution transmission electron microscope (HRTEM). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains fine-grained nc-Si:H embedded in a-Si:H matrix. |
| abstractGer |
Abstract Hydrogenated amorphous silicon (a-Si:H) single junction solar cells with high open circuit voltage (Voc) are fabricated using a wide bandgap boron-doped Si:H p-layer deposited at high hydrogen dilution, low substrate temperature and with $ H_{2} $-plasma treatment that promotes nanocrystalline silicon (nc-Si:H) formation. This paper presents the structure of this p-type material characterized by high resolution transmission electron microscope (HRTEM). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains fine-grained nc-Si:H embedded in a-Si:H matrix. |
| abstract_unstemmed |
Abstract Hydrogenated amorphous silicon (a-Si:H) single junction solar cells with high open circuit voltage (Voc) are fabricated using a wide bandgap boron-doped Si:H p-layer deposited at high hydrogen dilution, low substrate temperature and with $ H_{2} $-plasma treatment that promotes nanocrystalline silicon (nc-Si:H) formation. This paper presents the structure of this p-type material characterized by high resolution transmission electron microscope (HRTEM). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains fine-grained nc-Si:H embedded in a-Si:H matrix. |
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RETRACTED ARTICLE: High resolution transmission electron microscope studies of a-Si:H solar cells |
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https://dx.doi.org/10.1007/s12043-007-0098-1 |
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Syahrul, M. N. Henkel, K. |
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Syahrul, M. N. Henkel, K. |
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10.1007/s12043-007-0098-1 |
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2024-07-04T00:40:13.801Z |
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| score |
7.402669 |