Fabrication of large area high density, ultra-low reflection silicon nanowire arrays for efficient solar cell applications
Abstract High density vertically aligned and high aspect ratio silicon nanowire (SiNW) arrays have been fabricated on a Si substrate using a template and a catalytic etching process. The template was formed from polystyrene (PS) nanospheres with diameter 30–50 nm and density $ 10^{10} $/$ cm^{2} $,...
Ausführliche Beschreibung
Autor*in: |
Thiyagu, Subramani [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2011 |
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Schlagwörter: |
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Anmerkung: |
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2011 |
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Übergeordnetes Werk: |
Enthalten in: Nano research - [S.l.] : Tsinghua Press, 2008, 4(2011), 11 vom: 10. Aug., Seite 1136-1143 |
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Übergeordnetes Werk: |
volume:4 ; year:2011 ; number:11 ; day:10 ; month:08 ; pages:1136-1143 |
Links: |
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DOI / URN: |
10.1007/s12274-011-0162-5 |
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Katalog-ID: |
SPR024707155 |
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520 | |a Abstract High density vertically aligned and high aspect ratio silicon nanowire (SiNW) arrays have been fabricated on a Si substrate using a template and a catalytic etching process. The template was formed from polystyrene (PS) nanospheres with diameter 30–50 nm and density $ 10^{10} $/$ cm^{2} $, produced by nanophase separation of PS-containing block-copolymers. The length of the SiNWs was controlled by varying the etching time with an etching rate of 12.5 nm/s. The SiNWs have a biomimetic structure with a high aspect ratio (∼100), high density, and exhibit ultra-low reflectance. An ultra-low reflectance of approximately 0.1% was achieved for SiNWs longer than 750 nm. Well-aligned SiNW/poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) heterojunction solar cells were fabricated. The n-type silicon nanowire surfaces adhered to PEDOT:PSS to form a core-sheath heterojunction structure through a simple and efficient solution process. The large surface area of the SiNWs ensured efficient collection of photogenerated carriers. Compared to planar cells without the nanowire structure, the SiNW/PEDOT:PSS heterojunction solar cell exhibited an increase in short-circuit current density from 2.35 mA/$ cm^{2} $ to 21.1 mA/$ cm^{2} $ and improvement in power conversion efficiency from 0.4% to 5.7%. | ||
650 | 4 | |a Ultra-low reflection |7 (dpeaa)DE-He213 | |
650 | 4 | |a silicon nanowire |7 (dpeaa)DE-He213 | |
650 | 4 | |a polystyrene nanosphere |7 (dpeaa)DE-He213 | |
650 | 4 | |a heterojunction solar cell |7 (dpeaa)DE-He213 | |
700 | 1 | |a Devi, B. Parvathy |4 aut | |
700 | 1 | |a Pei, Zingway |4 aut | |
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10.1007/s12274-011-0162-5 doi (DE-627)SPR024707155 (SPR)s12274-011-0162-5-e DE-627 ger DE-627 rakwb eng Thiyagu, Subramani verfasserin aut Fabrication of large area high density, ultra-low reflection silicon nanowire arrays for efficient solar cell applications 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2011 Abstract High density vertically aligned and high aspect ratio silicon nanowire (SiNW) arrays have been fabricated on a Si substrate using a template and a catalytic etching process. The template was formed from polystyrene (PS) nanospheres with diameter 30–50 nm and density $ 10^{10} $/$ cm^{2} $, produced by nanophase separation of PS-containing block-copolymers. The length of the SiNWs was controlled by varying the etching time with an etching rate of 12.5 nm/s. The SiNWs have a biomimetic structure with a high aspect ratio (∼100), high density, and exhibit ultra-low reflectance. An ultra-low reflectance of approximately 0.1% was achieved for SiNWs longer than 750 nm. Well-aligned SiNW/poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) heterojunction solar cells were fabricated. The n-type silicon nanowire surfaces adhered to PEDOT:PSS to form a core-sheath heterojunction structure through a simple and efficient solution process. The large surface area of the SiNWs ensured efficient collection of photogenerated carriers. Compared to planar cells without the nanowire structure, the SiNW/PEDOT:PSS heterojunction solar cell exhibited an increase in short-circuit current density from 2.35 mA/$ cm^{2} $ to 21.1 mA/$ cm^{2} $ and improvement in power conversion efficiency from 0.4% to 5.7%. Ultra-low reflection (dpeaa)DE-He213 silicon nanowire (dpeaa)DE-He213 polystyrene nanosphere (dpeaa)DE-He213 heterojunction solar cell (dpeaa)DE-He213 Devi, B. Parvathy aut Pei, Zingway aut Enthalten in Nano research [S.l.] : Tsinghua Press, 2008 4(2011), 11 vom: 10. Aug., Seite 1136-1143 (DE-627)57375361X (DE-600)2442216-2 1998-0000 nnns volume:4 year:2011 number:11 day:10 month:08 pages:1136-1143 https://dx.doi.org/10.1007/s12274-011-0162-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 4 2011 11 10 08 1136-1143 |
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10.1007/s12274-011-0162-5 doi (DE-627)SPR024707155 (SPR)s12274-011-0162-5-e DE-627 ger DE-627 rakwb eng Thiyagu, Subramani verfasserin aut Fabrication of large area high density, ultra-low reflection silicon nanowire arrays for efficient solar cell applications 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2011 Abstract High density vertically aligned and high aspect ratio silicon nanowire (SiNW) arrays have been fabricated on a Si substrate using a template and a catalytic etching process. The template was formed from polystyrene (PS) nanospheres with diameter 30–50 nm and density $ 10^{10} $/$ cm^{2} $, produced by nanophase separation of PS-containing block-copolymers. The length of the SiNWs was controlled by varying the etching time with an etching rate of 12.5 nm/s. The SiNWs have a biomimetic structure with a high aspect ratio (∼100), high density, and exhibit ultra-low reflectance. An ultra-low reflectance of approximately 0.1% was achieved for SiNWs longer than 750 nm. Well-aligned SiNW/poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) heterojunction solar cells were fabricated. The n-type silicon nanowire surfaces adhered to PEDOT:PSS to form a core-sheath heterojunction structure through a simple and efficient solution process. The large surface area of the SiNWs ensured efficient collection of photogenerated carriers. Compared to planar cells without the nanowire structure, the SiNW/PEDOT:PSS heterojunction solar cell exhibited an increase in short-circuit current density from 2.35 mA/$ cm^{2} $ to 21.1 mA/$ cm^{2} $ and improvement in power conversion efficiency from 0.4% to 5.7%. Ultra-low reflection (dpeaa)DE-He213 silicon nanowire (dpeaa)DE-He213 polystyrene nanosphere (dpeaa)DE-He213 heterojunction solar cell (dpeaa)DE-He213 Devi, B. Parvathy aut Pei, Zingway aut Enthalten in Nano research [S.l.] : Tsinghua Press, 2008 4(2011), 11 vom: 10. Aug., Seite 1136-1143 (DE-627)57375361X (DE-600)2442216-2 1998-0000 nnns volume:4 year:2011 number:11 day:10 month:08 pages:1136-1143 https://dx.doi.org/10.1007/s12274-011-0162-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 4 2011 11 10 08 1136-1143 |
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10.1007/s12274-011-0162-5 doi (DE-627)SPR024707155 (SPR)s12274-011-0162-5-e DE-627 ger DE-627 rakwb eng Thiyagu, Subramani verfasserin aut Fabrication of large area high density, ultra-low reflection silicon nanowire arrays for efficient solar cell applications 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2011 Abstract High density vertically aligned and high aspect ratio silicon nanowire (SiNW) arrays have been fabricated on a Si substrate using a template and a catalytic etching process. The template was formed from polystyrene (PS) nanospheres with diameter 30–50 nm and density $ 10^{10} $/$ cm^{2} $, produced by nanophase separation of PS-containing block-copolymers. The length of the SiNWs was controlled by varying the etching time with an etching rate of 12.5 nm/s. The SiNWs have a biomimetic structure with a high aspect ratio (∼100), high density, and exhibit ultra-low reflectance. An ultra-low reflectance of approximately 0.1% was achieved for SiNWs longer than 750 nm. Well-aligned SiNW/poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) heterojunction solar cells were fabricated. The n-type silicon nanowire surfaces adhered to PEDOT:PSS to form a core-sheath heterojunction structure through a simple and efficient solution process. The large surface area of the SiNWs ensured efficient collection of photogenerated carriers. Compared to planar cells without the nanowire structure, the SiNW/PEDOT:PSS heterojunction solar cell exhibited an increase in short-circuit current density from 2.35 mA/$ cm^{2} $ to 21.1 mA/$ cm^{2} $ and improvement in power conversion efficiency from 0.4% to 5.7%. Ultra-low reflection (dpeaa)DE-He213 silicon nanowire (dpeaa)DE-He213 polystyrene nanosphere (dpeaa)DE-He213 heterojunction solar cell (dpeaa)DE-He213 Devi, B. Parvathy aut Pei, Zingway aut Enthalten in Nano research [S.l.] : Tsinghua Press, 2008 4(2011), 11 vom: 10. Aug., Seite 1136-1143 (DE-627)57375361X (DE-600)2442216-2 1998-0000 nnns volume:4 year:2011 number:11 day:10 month:08 pages:1136-1143 https://dx.doi.org/10.1007/s12274-011-0162-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 4 2011 11 10 08 1136-1143 |
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10.1007/s12274-011-0162-5 doi (DE-627)SPR024707155 (SPR)s12274-011-0162-5-e DE-627 ger DE-627 rakwb eng Thiyagu, Subramani verfasserin aut Fabrication of large area high density, ultra-low reflection silicon nanowire arrays for efficient solar cell applications 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2011 Abstract High density vertically aligned and high aspect ratio silicon nanowire (SiNW) arrays have been fabricated on a Si substrate using a template and a catalytic etching process. The template was formed from polystyrene (PS) nanospheres with diameter 30–50 nm and density $ 10^{10} $/$ cm^{2} $, produced by nanophase separation of PS-containing block-copolymers. The length of the SiNWs was controlled by varying the etching time with an etching rate of 12.5 nm/s. The SiNWs have a biomimetic structure with a high aspect ratio (∼100), high density, and exhibit ultra-low reflectance. An ultra-low reflectance of approximately 0.1% was achieved for SiNWs longer than 750 nm. Well-aligned SiNW/poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) heterojunction solar cells were fabricated. The n-type silicon nanowire surfaces adhered to PEDOT:PSS to form a core-sheath heterojunction structure through a simple and efficient solution process. The large surface area of the SiNWs ensured efficient collection of photogenerated carriers. Compared to planar cells without the nanowire structure, the SiNW/PEDOT:PSS heterojunction solar cell exhibited an increase in short-circuit current density from 2.35 mA/$ cm^{2} $ to 21.1 mA/$ cm^{2} $ and improvement in power conversion efficiency from 0.4% to 5.7%. Ultra-low reflection (dpeaa)DE-He213 silicon nanowire (dpeaa)DE-He213 polystyrene nanosphere (dpeaa)DE-He213 heterojunction solar cell (dpeaa)DE-He213 Devi, B. Parvathy aut Pei, Zingway aut Enthalten in Nano research [S.l.] : Tsinghua Press, 2008 4(2011), 11 vom: 10. Aug., Seite 1136-1143 (DE-627)57375361X (DE-600)2442216-2 1998-0000 nnns volume:4 year:2011 number:11 day:10 month:08 pages:1136-1143 https://dx.doi.org/10.1007/s12274-011-0162-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 4 2011 11 10 08 1136-1143 |
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10.1007/s12274-011-0162-5 doi (DE-627)SPR024707155 (SPR)s12274-011-0162-5-e DE-627 ger DE-627 rakwb eng Thiyagu, Subramani verfasserin aut Fabrication of large area high density, ultra-low reflection silicon nanowire arrays for efficient solar cell applications 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2011 Abstract High density vertically aligned and high aspect ratio silicon nanowire (SiNW) arrays have been fabricated on a Si substrate using a template and a catalytic etching process. The template was formed from polystyrene (PS) nanospheres with diameter 30–50 nm and density $ 10^{10} $/$ cm^{2} $, produced by nanophase separation of PS-containing block-copolymers. The length of the SiNWs was controlled by varying the etching time with an etching rate of 12.5 nm/s. The SiNWs have a biomimetic structure with a high aspect ratio (∼100), high density, and exhibit ultra-low reflectance. An ultra-low reflectance of approximately 0.1% was achieved for SiNWs longer than 750 nm. Well-aligned SiNW/poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) heterojunction solar cells were fabricated. The n-type silicon nanowire surfaces adhered to PEDOT:PSS to form a core-sheath heterojunction structure through a simple and efficient solution process. The large surface area of the SiNWs ensured efficient collection of photogenerated carriers. Compared to planar cells without the nanowire structure, the SiNW/PEDOT:PSS heterojunction solar cell exhibited an increase in short-circuit current density from 2.35 mA/$ cm^{2} $ to 21.1 mA/$ cm^{2} $ and improvement in power conversion efficiency from 0.4% to 5.7%. Ultra-low reflection (dpeaa)DE-He213 silicon nanowire (dpeaa)DE-He213 polystyrene nanosphere (dpeaa)DE-He213 heterojunction solar cell (dpeaa)DE-He213 Devi, B. Parvathy aut Pei, Zingway aut Enthalten in Nano research [S.l.] : Tsinghua Press, 2008 4(2011), 11 vom: 10. Aug., Seite 1136-1143 (DE-627)57375361X (DE-600)2442216-2 1998-0000 nnns volume:4 year:2011 number:11 day:10 month:08 pages:1136-1143 https://dx.doi.org/10.1007/s12274-011-0162-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 4 2011 11 10 08 1136-1143 |
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Enthalten in Nano research 4(2011), 11 vom: 10. Aug., Seite 1136-1143 volume:4 year:2011 number:11 day:10 month:08 pages:1136-1143 |
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Thiyagu, Subramani @@aut@@ Devi, B. Parvathy @@aut@@ Pei, Zingway @@aut@@ |
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The template was formed from polystyrene (PS) nanospheres with diameter 30–50 nm and density $ 10^{10} $/$ cm^{2} $, produced by nanophase separation of PS-containing block-copolymers. The length of the SiNWs was controlled by varying the etching time with an etching rate of 12.5 nm/s. The SiNWs have a biomimetic structure with a high aspect ratio (∼100), high density, and exhibit ultra-low reflectance. An ultra-low reflectance of approximately 0.1% was achieved for SiNWs longer than 750 nm. Well-aligned SiNW/poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) heterojunction solar cells were fabricated. The n-type silicon nanowire surfaces adhered to PEDOT:PSS to form a core-sheath heterojunction structure through a simple and efficient solution process. The large surface area of the SiNWs ensured efficient collection of photogenerated carriers. 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Thiyagu, Subramani |
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Thiyagu, Subramani misc Ultra-low reflection misc silicon nanowire misc polystyrene nanosphere misc heterojunction solar cell Fabrication of large area high density, ultra-low reflection silicon nanowire arrays for efficient solar cell applications |
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Fabrication of large area high density, ultra-low reflection silicon nanowire arrays for efficient solar cell applications Ultra-low reflection (dpeaa)DE-He213 silicon nanowire (dpeaa)DE-He213 polystyrene nanosphere (dpeaa)DE-He213 heterojunction solar cell (dpeaa)DE-He213 |
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fabrication of large area high density, ultra-low reflection silicon nanowire arrays for efficient solar cell applications |
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Fabrication of large area high density, ultra-low reflection silicon nanowire arrays for efficient solar cell applications |
abstract |
Abstract High density vertically aligned and high aspect ratio silicon nanowire (SiNW) arrays have been fabricated on a Si substrate using a template and a catalytic etching process. The template was formed from polystyrene (PS) nanospheres with diameter 30–50 nm and density $ 10^{10} $/$ cm^{2} $, produced by nanophase separation of PS-containing block-copolymers. The length of the SiNWs was controlled by varying the etching time with an etching rate of 12.5 nm/s. The SiNWs have a biomimetic structure with a high aspect ratio (∼100), high density, and exhibit ultra-low reflectance. An ultra-low reflectance of approximately 0.1% was achieved for SiNWs longer than 750 nm. Well-aligned SiNW/poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) heterojunction solar cells were fabricated. The n-type silicon nanowire surfaces adhered to PEDOT:PSS to form a core-sheath heterojunction structure through a simple and efficient solution process. The large surface area of the SiNWs ensured efficient collection of photogenerated carriers. Compared to planar cells without the nanowire structure, the SiNW/PEDOT:PSS heterojunction solar cell exhibited an increase in short-circuit current density from 2.35 mA/$ cm^{2} $ to 21.1 mA/$ cm^{2} $ and improvement in power conversion efficiency from 0.4% to 5.7%. © Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2011 |
abstractGer |
Abstract High density vertically aligned and high aspect ratio silicon nanowire (SiNW) arrays have been fabricated on a Si substrate using a template and a catalytic etching process. The template was formed from polystyrene (PS) nanospheres with diameter 30–50 nm and density $ 10^{10} $/$ cm^{2} $, produced by nanophase separation of PS-containing block-copolymers. The length of the SiNWs was controlled by varying the etching time with an etching rate of 12.5 nm/s. The SiNWs have a biomimetic structure with a high aspect ratio (∼100), high density, and exhibit ultra-low reflectance. An ultra-low reflectance of approximately 0.1% was achieved for SiNWs longer than 750 nm. Well-aligned SiNW/poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) heterojunction solar cells were fabricated. The n-type silicon nanowire surfaces adhered to PEDOT:PSS to form a core-sheath heterojunction structure through a simple and efficient solution process. The large surface area of the SiNWs ensured efficient collection of photogenerated carriers. Compared to planar cells without the nanowire structure, the SiNW/PEDOT:PSS heterojunction solar cell exhibited an increase in short-circuit current density from 2.35 mA/$ cm^{2} $ to 21.1 mA/$ cm^{2} $ and improvement in power conversion efficiency from 0.4% to 5.7%. © Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2011 |
abstract_unstemmed |
Abstract High density vertically aligned and high aspect ratio silicon nanowire (SiNW) arrays have been fabricated on a Si substrate using a template and a catalytic etching process. The template was formed from polystyrene (PS) nanospheres with diameter 30–50 nm and density $ 10^{10} $/$ cm^{2} $, produced by nanophase separation of PS-containing block-copolymers. The length of the SiNWs was controlled by varying the etching time with an etching rate of 12.5 nm/s. The SiNWs have a biomimetic structure with a high aspect ratio (∼100), high density, and exhibit ultra-low reflectance. An ultra-low reflectance of approximately 0.1% was achieved for SiNWs longer than 750 nm. Well-aligned SiNW/poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) heterojunction solar cells were fabricated. The n-type silicon nanowire surfaces adhered to PEDOT:PSS to form a core-sheath heterojunction structure through a simple and efficient solution process. The large surface area of the SiNWs ensured efficient collection of photogenerated carriers. Compared to planar cells without the nanowire structure, the SiNW/PEDOT:PSS heterojunction solar cell exhibited an increase in short-circuit current density from 2.35 mA/$ cm^{2} $ to 21.1 mA/$ cm^{2} $ and improvement in power conversion efficiency from 0.4% to 5.7%. © Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2011 |
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container_issue |
11 |
title_short |
Fabrication of large area high density, ultra-low reflection silicon nanowire arrays for efficient solar cell applications |
url |
https://dx.doi.org/10.1007/s12274-011-0162-5 |
remote_bool |
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author2 |
Devi, B. Parvathy Pei, Zingway |
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doi_str |
10.1007/s12274-011-0162-5 |
up_date |
2024-07-04T02:03:18.975Z |
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score |
7.4014435 |