Diameter dependent doping in horizontally aligned high-density N-doped SWNT arrays

Abstract We reported the growth of horizontally aligned nitrogen-doped single-walled carbon nanotubes (SWNTs) on quartz substrates. The synthesized SWNTs were comprehensively characterized at the single nanotube level. Owing to the highly aligned nature of the nanotubes, we were able to investigate...
Ausführliche Beschreibung

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Autor*in:	Li, Pan [verfasserIn] Li, Yiming Zhang, Xiao Chen, Jun Cheng, Yingwen Li, Yi Ma, Yanwen Liu, Jie

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Schlagwörter:	single-walled carbon nanotube (SWNT) array chemical vapor deposition (CVD) N-doping diameter dependent doping Raman spectroscopy

Anmerkung:	© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Übergeordnetes Werk:	Enthalten in: Nano research - [S.l.] : Tsinghua Press, 2008, 12(2019), 8 vom: 15. Juni, Seite 1845-1850
Übergeordnetes Werk:	volume:12 ; year:2019 ; number:8 ; day:15 ; month:06 ; pages:1845-1850

Links:	Volltext

DOI / URN:	10.1007/s12274-019-2445-1

Katalog-ID:	SPR024733849

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520			\|a Abstract We reported the growth of horizontally aligned nitrogen-doped single-walled carbon nanotubes (SWNTs) on quartz substrates. The synthesized SWNTs were comprehensively characterized at the single nanotube level. Owing to the highly aligned nature of the nanotubes, we were able to investigate the diameter dependent doping mechanism through systematic resonant Raman spectroscopy studies. Other than the formerly found narrowing effect by N-doping, we proposed that the nanotube diameter affects the introduction of N atoms into the carbon lattice in an elaborate way. The obtained doping level increased along with the nanotube diameter but lost the increasing trend when the diameter became larger and experienced a slight decrease after reaching the local peak value. These insights about the heteroatom doping into the carbon nanotubes could benefit the development of the carbon nanotube based functional materials and extend their application in a broad range of areas.
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650		4	\|a chemical vapor deposition (CVD) \|7 (dpeaa)DE-He213
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650		4	\|a diameter dependent doping \|7 (dpeaa)DE-He213
650		4	\|a Raman spectroscopy \|7 (dpeaa)DE-He213
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700	1		\|a Chen, Jun \|4 aut
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700	1		\|a Li, Yi \|4 aut
700	1		\|a Ma, Yanwen \|4 aut
700	1		\|a Liu, Jie \|4 aut
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912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_101
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
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912			\|a GBV_ILN_4333
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Indexfelder

author_variant	p l pl y l yl x z xz j c jc y c yc y l yl y m ym j l jl
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allfields	10.1007/s12274-019-2445-1 doi (DE-627)SPR024733849 (SPR)s12274-019-2445-1-e DE-627 ger DE-627 rakwb eng Li, Pan verfasserin aut Diameter dependent doping in horizontally aligned high-density N-doped SWNT arrays 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019 Abstract We reported the growth of horizontally aligned nitrogen-doped single-walled carbon nanotubes (SWNTs) on quartz substrates. The synthesized SWNTs were comprehensively characterized at the single nanotube level. Owing to the highly aligned nature of the nanotubes, we were able to investigate the diameter dependent doping mechanism through systematic resonant Raman spectroscopy studies. Other than the formerly found narrowing effect by N-doping, we proposed that the nanotube diameter affects the introduction of N atoms into the carbon lattice in an elaborate way. The obtained doping level increased along with the nanotube diameter but lost the increasing trend when the diameter became larger and experienced a slight decrease after reaching the local peak value. These insights about the heteroatom doping into the carbon nanotubes could benefit the development of the carbon nanotube based functional materials and extend their application in a broad range of areas. single-walled carbon nanotube (SWNT) array (dpeaa)DE-He213 chemical vapor deposition (CVD) (dpeaa)DE-He213 N-doping (dpeaa)DE-He213 diameter dependent doping (dpeaa)DE-He213 Raman spectroscopy (dpeaa)DE-He213 Li, Yiming aut Zhang, Xiao aut Chen, Jun aut Cheng, Yingwen aut Li, Yi aut Ma, Yanwen aut Liu, Jie aut Enthalten in Nano research [S.l.] : Tsinghua Press, 2008 12(2019), 8 vom: 15. Juni, Seite 1845-1850 (DE-627)57375361X (DE-600)2442216-2 1998-0000 nnns volume:12 year:2019 number:8 day:15 month:06 pages:1845-1850 https://dx.doi.org/10.1007/s12274-019-2445-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 12 2019 8 15 06 1845-1850
spelling	10.1007/s12274-019-2445-1 doi (DE-627)SPR024733849 (SPR)s12274-019-2445-1-e DE-627 ger DE-627 rakwb eng Li, Pan verfasserin aut Diameter dependent doping in horizontally aligned high-density N-doped SWNT arrays 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019 Abstract We reported the growth of horizontally aligned nitrogen-doped single-walled carbon nanotubes (SWNTs) on quartz substrates. The synthesized SWNTs were comprehensively characterized at the single nanotube level. Owing to the highly aligned nature of the nanotubes, we were able to investigate the diameter dependent doping mechanism through systematic resonant Raman spectroscopy studies. Other than the formerly found narrowing effect by N-doping, we proposed that the nanotube diameter affects the introduction of N atoms into the carbon lattice in an elaborate way. The obtained doping level increased along with the nanotube diameter but lost the increasing trend when the diameter became larger and experienced a slight decrease after reaching the local peak value. These insights about the heteroatom doping into the carbon nanotubes could benefit the development of the carbon nanotube based functional materials and extend their application in a broad range of areas. single-walled carbon nanotube (SWNT) array (dpeaa)DE-He213 chemical vapor deposition (CVD) (dpeaa)DE-He213 N-doping (dpeaa)DE-He213 diameter dependent doping (dpeaa)DE-He213 Raman spectroscopy (dpeaa)DE-He213 Li, Yiming aut Zhang, Xiao aut Chen, Jun aut Cheng, Yingwen aut Li, Yi aut Ma, Yanwen aut Liu, Jie aut Enthalten in Nano research [S.l.] : Tsinghua Press, 2008 12(2019), 8 vom: 15. Juni, Seite 1845-1850 (DE-627)57375361X (DE-600)2442216-2 1998-0000 nnns volume:12 year:2019 number:8 day:15 month:06 pages:1845-1850 https://dx.doi.org/10.1007/s12274-019-2445-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 12 2019 8 15 06 1845-1850
allfields_unstemmed	10.1007/s12274-019-2445-1 doi (DE-627)SPR024733849 (SPR)s12274-019-2445-1-e DE-627 ger DE-627 rakwb eng Li, Pan verfasserin aut Diameter dependent doping in horizontally aligned high-density N-doped SWNT arrays 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019 Abstract We reported the growth of horizontally aligned nitrogen-doped single-walled carbon nanotubes (SWNTs) on quartz substrates. The synthesized SWNTs were comprehensively characterized at the single nanotube level. Owing to the highly aligned nature of the nanotubes, we were able to investigate the diameter dependent doping mechanism through systematic resonant Raman spectroscopy studies. Other than the formerly found narrowing effect by N-doping, we proposed that the nanotube diameter affects the introduction of N atoms into the carbon lattice in an elaborate way. The obtained doping level increased along with the nanotube diameter but lost the increasing trend when the diameter became larger and experienced a slight decrease after reaching the local peak value. These insights about the heteroatom doping into the carbon nanotubes could benefit the development of the carbon nanotube based functional materials and extend their application in a broad range of areas. single-walled carbon nanotube (SWNT) array (dpeaa)DE-He213 chemical vapor deposition (CVD) (dpeaa)DE-He213 N-doping (dpeaa)DE-He213 diameter dependent doping (dpeaa)DE-He213 Raman spectroscopy (dpeaa)DE-He213 Li, Yiming aut Zhang, Xiao aut Chen, Jun aut Cheng, Yingwen aut Li, Yi aut Ma, Yanwen aut Liu, Jie aut Enthalten in Nano research [S.l.] : Tsinghua Press, 2008 12(2019), 8 vom: 15. Juni, Seite 1845-1850 (DE-627)57375361X (DE-600)2442216-2 1998-0000 nnns volume:12 year:2019 number:8 day:15 month:06 pages:1845-1850 https://dx.doi.org/10.1007/s12274-019-2445-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 12 2019 8 15 06 1845-1850
allfieldsGer	10.1007/s12274-019-2445-1 doi (DE-627)SPR024733849 (SPR)s12274-019-2445-1-e DE-627 ger DE-627 rakwb eng Li, Pan verfasserin aut Diameter dependent doping in horizontally aligned high-density N-doped SWNT arrays 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019 Abstract We reported the growth of horizontally aligned nitrogen-doped single-walled carbon nanotubes (SWNTs) on quartz substrates. The synthesized SWNTs were comprehensively characterized at the single nanotube level. Owing to the highly aligned nature of the nanotubes, we were able to investigate the diameter dependent doping mechanism through systematic resonant Raman spectroscopy studies. Other than the formerly found narrowing effect by N-doping, we proposed that the nanotube diameter affects the introduction of N atoms into the carbon lattice in an elaborate way. The obtained doping level increased along with the nanotube diameter but lost the increasing trend when the diameter became larger and experienced a slight decrease after reaching the local peak value. These insights about the heteroatom doping into the carbon nanotubes could benefit the development of the carbon nanotube based functional materials and extend their application in a broad range of areas. single-walled carbon nanotube (SWNT) array (dpeaa)DE-He213 chemical vapor deposition (CVD) (dpeaa)DE-He213 N-doping (dpeaa)DE-He213 diameter dependent doping (dpeaa)DE-He213 Raman spectroscopy (dpeaa)DE-He213 Li, Yiming aut Zhang, Xiao aut Chen, Jun aut Cheng, Yingwen aut Li, Yi aut Ma, Yanwen aut Liu, Jie aut Enthalten in Nano research [S.l.] : Tsinghua Press, 2008 12(2019), 8 vom: 15. Juni, Seite 1845-1850 (DE-627)57375361X (DE-600)2442216-2 1998-0000 nnns volume:12 year:2019 number:8 day:15 month:06 pages:1845-1850 https://dx.doi.org/10.1007/s12274-019-2445-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 12 2019 8 15 06 1845-1850
allfieldsSound	10.1007/s12274-019-2445-1 doi (DE-627)SPR024733849 (SPR)s12274-019-2445-1-e DE-627 ger DE-627 rakwb eng Li, Pan verfasserin aut Diameter dependent doping in horizontally aligned high-density N-doped SWNT arrays 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019 Abstract We reported the growth of horizontally aligned nitrogen-doped single-walled carbon nanotubes (SWNTs) on quartz substrates. The synthesized SWNTs were comprehensively characterized at the single nanotube level. Owing to the highly aligned nature of the nanotubes, we were able to investigate the diameter dependent doping mechanism through systematic resonant Raman spectroscopy studies. Other than the formerly found narrowing effect by N-doping, we proposed that the nanotube diameter affects the introduction of N atoms into the carbon lattice in an elaborate way. The obtained doping level increased along with the nanotube diameter but lost the increasing trend when the diameter became larger and experienced a slight decrease after reaching the local peak value. These insights about the heteroatom doping into the carbon nanotubes could benefit the development of the carbon nanotube based functional materials and extend their application in a broad range of areas. single-walled carbon nanotube (SWNT) array (dpeaa)DE-He213 chemical vapor deposition (CVD) (dpeaa)DE-He213 N-doping (dpeaa)DE-He213 diameter dependent doping (dpeaa)DE-He213 Raman spectroscopy (dpeaa)DE-He213 Li, Yiming aut Zhang, Xiao aut Chen, Jun aut Cheng, Yingwen aut Li, Yi aut Ma, Yanwen aut Liu, Jie aut Enthalten in Nano research [S.l.] : Tsinghua Press, 2008 12(2019), 8 vom: 15. Juni, Seite 1845-1850 (DE-627)57375361X (DE-600)2442216-2 1998-0000 nnns volume:12 year:2019 number:8 day:15 month:06 pages:1845-1850 https://dx.doi.org/10.1007/s12274-019-2445-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 12 2019 8 15 06 1845-1850
language	English
source	Enthalten in Nano research 12(2019), 8 vom: 15. Juni, Seite 1845-1850 volume:12 year:2019 number:8 day:15 month:06 pages:1845-1850
sourceStr	Enthalten in Nano research 12(2019), 8 vom: 15. Juni, Seite 1845-1850 volume:12 year:2019 number:8 day:15 month:06 pages:1845-1850
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	single-walled carbon nanotube (SWNT) array chemical vapor deposition (CVD) N-doping diameter dependent doping Raman spectroscopy
isfreeaccess_bool	false
container_title	Nano research
authorswithroles_txt_mv	Li, Pan @@aut@@ Li, Yiming @@aut@@ Zhang, Xiao @@aut@@ Chen, Jun @@aut@@ Cheng, Yingwen @@aut@@ Li, Yi @@aut@@ Ma, Yanwen @@aut@@ Liu, Jie @@aut@@
publishDateDaySort_date	2019-06-15T00:00:00Z
hierarchy_top_id	57375361X
id	SPR024733849
language_de	englisch
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author	Li, Pan
spellingShingle	Li, Pan misc single-walled carbon nanotube (SWNT) array misc chemical vapor deposition (CVD) misc N-doping misc diameter dependent doping misc Raman spectroscopy Diameter dependent doping in horizontally aligned high-density N-doped SWNT arrays
authorStr	Li, Pan
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topic_title	Diameter dependent doping in horizontally aligned high-density N-doped SWNT arrays single-walled carbon nanotube (SWNT) array (dpeaa)DE-He213 chemical vapor deposition (CVD) (dpeaa)DE-He213 N-doping (dpeaa)DE-He213 diameter dependent doping (dpeaa)DE-He213 Raman spectroscopy (dpeaa)DE-He213
topic	misc single-walled carbon nanotube (SWNT) array misc chemical vapor deposition (CVD) misc N-doping misc diameter dependent doping misc Raman spectroscopy
topic_unstemmed	misc single-walled carbon nanotube (SWNT) array misc chemical vapor deposition (CVD) misc N-doping misc diameter dependent doping misc Raman spectroscopy
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title	Diameter dependent doping in horizontally aligned high-density N-doped SWNT arrays
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title_full	Diameter dependent doping in horizontally aligned high-density N-doped SWNT arrays
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author_browse	Li, Pan Li, Yiming Zhang, Xiao Chen, Jun Cheng, Yingwen Li, Yi Ma, Yanwen Liu, Jie
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doi_str_mv	10.1007/s12274-019-2445-1
title_sort	diameter dependent doping in horizontally aligned high-density n-doped swnt arrays
title_auth	Diameter dependent doping in horizontally aligned high-density N-doped SWNT arrays
abstract	Abstract We reported the growth of horizontally aligned nitrogen-doped single-walled carbon nanotubes (SWNTs) on quartz substrates. The synthesized SWNTs were comprehensively characterized at the single nanotube level. Owing to the highly aligned nature of the nanotubes, we were able to investigate the diameter dependent doping mechanism through systematic resonant Raman spectroscopy studies. Other than the formerly found narrowing effect by N-doping, we proposed that the nanotube diameter affects the introduction of N atoms into the carbon lattice in an elaborate way. The obtained doping level increased along with the nanotube diameter but lost the increasing trend when the diameter became larger and experienced a slight decrease after reaching the local peak value. These insights about the heteroatom doping into the carbon nanotubes could benefit the development of the carbon nanotube based functional materials and extend their application in a broad range of areas. © Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019
abstractGer	Abstract We reported the growth of horizontally aligned nitrogen-doped single-walled carbon nanotubes (SWNTs) on quartz substrates. The synthesized SWNTs were comprehensively characterized at the single nanotube level. Owing to the highly aligned nature of the nanotubes, we were able to investigate the diameter dependent doping mechanism through systematic resonant Raman spectroscopy studies. Other than the formerly found narrowing effect by N-doping, we proposed that the nanotube diameter affects the introduction of N atoms into the carbon lattice in an elaborate way. The obtained doping level increased along with the nanotube diameter but lost the increasing trend when the diameter became larger and experienced a slight decrease after reaching the local peak value. These insights about the heteroatom doping into the carbon nanotubes could benefit the development of the carbon nanotube based functional materials and extend their application in a broad range of areas. © Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019
abstract_unstemmed	Abstract We reported the growth of horizontally aligned nitrogen-doped single-walled carbon nanotubes (SWNTs) on quartz substrates. The synthesized SWNTs were comprehensively characterized at the single nanotube level. Owing to the highly aligned nature of the nanotubes, we were able to investigate the diameter dependent doping mechanism through systematic resonant Raman spectroscopy studies. Other than the formerly found narrowing effect by N-doping, we proposed that the nanotube diameter affects the introduction of N atoms into the carbon lattice in an elaborate way. The obtained doping level increased along with the nanotube diameter but lost the increasing trend when the diameter became larger and experienced a slight decrease after reaching the local peak value. These insights about the heteroatom doping into the carbon nanotubes could benefit the development of the carbon nanotube based functional materials and extend their application in a broad range of areas. © Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019
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container_issue	8
title_short	Diameter dependent doping in horizontally aligned high-density N-doped SWNT arrays
url	https://dx.doi.org/10.1007/s12274-019-2445-1
remote_bool	true
author2	Li, Yiming Zhang, Xiao Chen, Jun Cheng, Yingwen Li, Yi Ma, Yanwen Liu, Jie
author2Str	Li, Yiming Zhang, Xiao Chen, Jun Cheng, Yingwen Li, Yi Ma, Yanwen Liu, Jie
ppnlink	57375361X
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doi_str	10.1007/s12274-019-2445-1
up_date	2024-07-04T02:10:48.180Z
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Diameter dependent doping in horizontally aligned high-density N-doped SWNT arrays

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