Antimony doped $ Cs_{2} %$ SnCl_{6} $ with bright and stable emission

Abstract Lead halide perovskites, with high photoluminescence efficiency and narrow-band emission, are promising materials for display and lighting. However, the lead toxicity and environmental sensitivity hinder their potential applications. Herein, a new antimony-doped lead-free inorganic perovski...
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Autor*in:	Li, Jinghui [verfasserIn] Tan, Zhifang Hu, Manchen Chen, Chao Luo, Jiajun Li, Shunran Gao, Liang Xiao, Zewen Niu, Guangda Tang, Jiang

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Schlagwörter:	perovskite lead-free antimony doping orange-red emission

Anmerkung:	© Higher Education Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Übergeordnetes Werk:	Enthalten in: Frontiers of optoelectronics in China - [Beijing] : Higher Education Press, 2008, 12(2019), 4 vom: 16. Mai, Seite 352-364
Übergeordnetes Werk:	volume:12 ; year:2019 ; number:4 ; day:16 ; month:05 ; pages:352-364

Links:	Volltext

DOI / URN:	10.1007/s12200-019-0907-4

Katalog-ID:	SPR025213369

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520			\|a Abstract Lead halide perovskites, with high photoluminescence efficiency and narrow-band emission, are promising materials for display and lighting. However, the lead toxicity and environmental sensitivity hinder their potential applications. Herein, a new antimony-doped lead-free inorganic perovskites variant $ Cs_{2} %$ SnCl_{6} $:xSb is designed and synthesized. The perovskite variant $ Cs_{2} %$ SnCl_{6} $:xSb exhibits a broadband orange-red emission, with a photoluminescence quantum yield (PLQY) of 37%. The photoluminescence of $ Cs_{2} %$ SnCl_{6} $:xSb is caused by the ionoluminescence of $ Sb^{3+} $ within $ Cs_{2} %$ SnCl_{6} $ matrix, which is verified by temperature dependent photoluminescence (PL) and PL decay measurements. In addition, the all inorganic structure renders $ Cs_{2} %$ SnCl_{6} $:xSb with excellent thermal and water stability. Finally, a white light-emitting diode (white-LED) is fabricated by assembling $ Cs_{2} %$ SnCl_{6} $:0.59%Sb, $ Cs_{2} %$ SnCl_{6} $:2.75%Bi and $ Ba_{2} %$ Sr_{2} %$ SiO_{4} $: $ Eu^{2+} $ onto the commercial UV LED chips, and the color rendering index (CRI) reaches 81.
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700	1		\|a Li, Shunran \|4 aut
700	1		\|a Gao, Liang \|4 aut
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700	1		\|a Niu, Guangda \|4 aut
700	1		\|a Tang, Jiang \|4 aut
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allfields	10.1007/s12200-019-0907-4 doi (DE-627)SPR025213369 (SPR)s12200-019-0907-4-e DE-627 ger DE-627 rakwb eng Li, Jinghui verfasserin aut Antimony doped $ Cs_{2} %$ SnCl_{6} $ with bright and stable emission 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Higher Education Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019 Abstract Lead halide perovskites, with high photoluminescence efficiency and narrow-band emission, are promising materials for display and lighting. However, the lead toxicity and environmental sensitivity hinder their potential applications. Herein, a new antimony-doped lead-free inorganic perovskites variant $ Cs_{2} %$ SnCl_{6} $:xSb is designed and synthesized. The perovskite variant $ Cs_{2} %$ SnCl_{6} $:xSb exhibits a broadband orange-red emission, with a photoluminescence quantum yield (PLQY) of 37%. The photoluminescence of $ Cs_{2} %$ SnCl_{6} $:xSb is caused by the ionoluminescence of $ Sb^{3+} $ within $ Cs_{2} %$ SnCl_{6} $ matrix, which is verified by temperature dependent photoluminescence (PL) and PL decay measurements. In addition, the all inorganic structure renders $ Cs_{2} %$ SnCl_{6} $:xSb with excellent thermal and water stability. Finally, a white light-emitting diode (white-LED) is fabricated by assembling $ Cs_{2} %$ SnCl_{6} $:0.59%Sb, $ Cs_{2} %$ SnCl_{6} $:2.75%Bi and $ Ba_{2} %$ Sr_{2} %$ SiO_{4} $: $ Eu^{2+} $ onto the commercial UV LED chips, and the color rendering index (CRI) reaches 81. perovskite (dpeaa)DE-He213 lead-free (dpeaa)DE-He213 antimony doping (dpeaa)DE-He213 orange-red emission (dpeaa)DE-He213 Tan, Zhifang aut Hu, Manchen aut Chen, Chao aut Luo, Jiajun aut Li, Shunran aut Gao, Liang aut Xiao, Zewen aut Niu, Guangda aut Tang, Jiang aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 12(2019), 4 vom: 16. Mai, Seite 352-364 (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:12 year:2019 number:4 day:16 month:05 pages:352-364 https://dx.doi.org/10.1007/s12200-019-0907-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 12 2019 4 16 05 352-364
spelling	10.1007/s12200-019-0907-4 doi (DE-627)SPR025213369 (SPR)s12200-019-0907-4-e DE-627 ger DE-627 rakwb eng Li, Jinghui verfasserin aut Antimony doped $ Cs_{2} %$ SnCl_{6} $ with bright and stable emission 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Higher Education Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019 Abstract Lead halide perovskites, with high photoluminescence efficiency and narrow-band emission, are promising materials for display and lighting. However, the lead toxicity and environmental sensitivity hinder their potential applications. Herein, a new antimony-doped lead-free inorganic perovskites variant $ Cs_{2} %$ SnCl_{6} $:xSb is designed and synthesized. The perovskite variant $ Cs_{2} %$ SnCl_{6} $:xSb exhibits a broadband orange-red emission, with a photoluminescence quantum yield (PLQY) of 37%. The photoluminescence of $ Cs_{2} %$ SnCl_{6} $:xSb is caused by the ionoluminescence of $ Sb^{3+} $ within $ Cs_{2} %$ SnCl_{6} $ matrix, which is verified by temperature dependent photoluminescence (PL) and PL decay measurements. In addition, the all inorganic structure renders $ Cs_{2} %$ SnCl_{6} $:xSb with excellent thermal and water stability. Finally, a white light-emitting diode (white-LED) is fabricated by assembling $ Cs_{2} %$ SnCl_{6} $:0.59%Sb, $ Cs_{2} %$ SnCl_{6} $:2.75%Bi and $ Ba_{2} %$ Sr_{2} %$ SiO_{4} $: $ Eu^{2+} $ onto the commercial UV LED chips, and the color rendering index (CRI) reaches 81. perovskite (dpeaa)DE-He213 lead-free (dpeaa)DE-He213 antimony doping (dpeaa)DE-He213 orange-red emission (dpeaa)DE-He213 Tan, Zhifang aut Hu, Manchen aut Chen, Chao aut Luo, Jiajun aut Li, Shunran aut Gao, Liang aut Xiao, Zewen aut Niu, Guangda aut Tang, Jiang aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 12(2019), 4 vom: 16. Mai, Seite 352-364 (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:12 year:2019 number:4 day:16 month:05 pages:352-364 https://dx.doi.org/10.1007/s12200-019-0907-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 12 2019 4 16 05 352-364
allfields_unstemmed	10.1007/s12200-019-0907-4 doi (DE-627)SPR025213369 (SPR)s12200-019-0907-4-e DE-627 ger DE-627 rakwb eng Li, Jinghui verfasserin aut Antimony doped $ Cs_{2} %$ SnCl_{6} $ with bright and stable emission 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Higher Education Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019 Abstract Lead halide perovskites, with high photoluminescence efficiency and narrow-band emission, are promising materials for display and lighting. However, the lead toxicity and environmental sensitivity hinder their potential applications. Herein, a new antimony-doped lead-free inorganic perovskites variant $ Cs_{2} %$ SnCl_{6} $:xSb is designed and synthesized. The perovskite variant $ Cs_{2} %$ SnCl_{6} $:xSb exhibits a broadband orange-red emission, with a photoluminescence quantum yield (PLQY) of 37%. The photoluminescence of $ Cs_{2} %$ SnCl_{6} $:xSb is caused by the ionoluminescence of $ Sb^{3+} $ within $ Cs_{2} %$ SnCl_{6} $ matrix, which is verified by temperature dependent photoluminescence (PL) and PL decay measurements. In addition, the all inorganic structure renders $ Cs_{2} %$ SnCl_{6} $:xSb with excellent thermal and water stability. Finally, a white light-emitting diode (white-LED) is fabricated by assembling $ Cs_{2} %$ SnCl_{6} $:0.59%Sb, $ Cs_{2} %$ SnCl_{6} $:2.75%Bi and $ Ba_{2} %$ Sr_{2} %$ SiO_{4} $: $ Eu^{2+} $ onto the commercial UV LED chips, and the color rendering index (CRI) reaches 81. perovskite (dpeaa)DE-He213 lead-free (dpeaa)DE-He213 antimony doping (dpeaa)DE-He213 orange-red emission (dpeaa)DE-He213 Tan, Zhifang aut Hu, Manchen aut Chen, Chao aut Luo, Jiajun aut Li, Shunran aut Gao, Liang aut Xiao, Zewen aut Niu, Guangda aut Tang, Jiang aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 12(2019), 4 vom: 16. Mai, Seite 352-364 (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:12 year:2019 number:4 day:16 month:05 pages:352-364 https://dx.doi.org/10.1007/s12200-019-0907-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 12 2019 4 16 05 352-364
allfieldsGer	10.1007/s12200-019-0907-4 doi (DE-627)SPR025213369 (SPR)s12200-019-0907-4-e DE-627 ger DE-627 rakwb eng Li, Jinghui verfasserin aut Antimony doped $ Cs_{2} %$ SnCl_{6} $ with bright and stable emission 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Higher Education Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019 Abstract Lead halide perovskites, with high photoluminescence efficiency and narrow-band emission, are promising materials for display and lighting. However, the lead toxicity and environmental sensitivity hinder their potential applications. Herein, a new antimony-doped lead-free inorganic perovskites variant $ Cs_{2} %$ SnCl_{6} $:xSb is designed and synthesized. The perovskite variant $ Cs_{2} %$ SnCl_{6} $:xSb exhibits a broadband orange-red emission, with a photoluminescence quantum yield (PLQY) of 37%. The photoluminescence of $ Cs_{2} %$ SnCl_{6} $:xSb is caused by the ionoluminescence of $ Sb^{3+} $ within $ Cs_{2} %$ SnCl_{6} $ matrix, which is verified by temperature dependent photoluminescence (PL) and PL decay measurements. In addition, the all inorganic structure renders $ Cs_{2} %$ SnCl_{6} $:xSb with excellent thermal and water stability. Finally, a white light-emitting diode (white-LED) is fabricated by assembling $ Cs_{2} %$ SnCl_{6} $:0.59%Sb, $ Cs_{2} %$ SnCl_{6} $:2.75%Bi and $ Ba_{2} %$ Sr_{2} %$ SiO_{4} $: $ Eu^{2+} $ onto the commercial UV LED chips, and the color rendering index (CRI) reaches 81. perovskite (dpeaa)DE-He213 lead-free (dpeaa)DE-He213 antimony doping (dpeaa)DE-He213 orange-red emission (dpeaa)DE-He213 Tan, Zhifang aut Hu, Manchen aut Chen, Chao aut Luo, Jiajun aut Li, Shunran aut Gao, Liang aut Xiao, Zewen aut Niu, Guangda aut Tang, Jiang aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 12(2019), 4 vom: 16. Mai, Seite 352-364 (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:12 year:2019 number:4 day:16 month:05 pages:352-364 https://dx.doi.org/10.1007/s12200-019-0907-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 12 2019 4 16 05 352-364
allfieldsSound	10.1007/s12200-019-0907-4 doi (DE-627)SPR025213369 (SPR)s12200-019-0907-4-e DE-627 ger DE-627 rakwb eng Li, Jinghui verfasserin aut Antimony doped $ Cs_{2} %$ SnCl_{6} $ with bright and stable emission 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Higher Education Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019 Abstract Lead halide perovskites, with high photoluminescence efficiency and narrow-band emission, are promising materials for display and lighting. However, the lead toxicity and environmental sensitivity hinder their potential applications. Herein, a new antimony-doped lead-free inorganic perovskites variant $ Cs_{2} %$ SnCl_{6} $:xSb is designed and synthesized. The perovskite variant $ Cs_{2} %$ SnCl_{6} $:xSb exhibits a broadband orange-red emission, with a photoluminescence quantum yield (PLQY) of 37%. The photoluminescence of $ Cs_{2} %$ SnCl_{6} $:xSb is caused by the ionoluminescence of $ Sb^{3+} $ within $ Cs_{2} %$ SnCl_{6} $ matrix, which is verified by temperature dependent photoluminescence (PL) and PL decay measurements. In addition, the all inorganic structure renders $ Cs_{2} %$ SnCl_{6} $:xSb with excellent thermal and water stability. Finally, a white light-emitting diode (white-LED) is fabricated by assembling $ Cs_{2} %$ SnCl_{6} $:0.59%Sb, $ Cs_{2} %$ SnCl_{6} $:2.75%Bi and $ Ba_{2} %$ Sr_{2} %$ SiO_{4} $: $ Eu^{2+} $ onto the commercial UV LED chips, and the color rendering index (CRI) reaches 81. perovskite (dpeaa)DE-He213 lead-free (dpeaa)DE-He213 antimony doping (dpeaa)DE-He213 orange-red emission (dpeaa)DE-He213 Tan, Zhifang aut Hu, Manchen aut Chen, Chao aut Luo, Jiajun aut Li, Shunran aut Gao, Liang aut Xiao, Zewen aut Niu, Guangda aut Tang, Jiang aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 12(2019), 4 vom: 16. Mai, Seite 352-364 (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:12 year:2019 number:4 day:16 month:05 pages:352-364 https://dx.doi.org/10.1007/s12200-019-0907-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 12 2019 4 16 05 352-364
language	English
source	Enthalten in Frontiers of optoelectronics in China 12(2019), 4 vom: 16. Mai, Seite 352-364 volume:12 year:2019 number:4 day:16 month:05 pages:352-364
sourceStr	Enthalten in Frontiers of optoelectronics in China 12(2019), 4 vom: 16. Mai, Seite 352-364 volume:12 year:2019 number:4 day:16 month:05 pages:352-364
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	perovskite lead-free antimony doping orange-red emission
isfreeaccess_bool	false
container_title	Frontiers of optoelectronics in China
authorswithroles_txt_mv	Li, Jinghui @@aut@@ Tan, Zhifang @@aut@@ Hu, Manchen @@aut@@ Chen, Chao @@aut@@ Luo, Jiajun @@aut@@ Li, Shunran @@aut@@ Gao, Liang @@aut@@ Xiao, Zewen @@aut@@ Niu, Guangda @@aut@@ Tang, Jiang @@aut@@
publishDateDaySort_date	2019-05-16T00:00:00Z
hierarchy_top_id	587886420
id	SPR025213369
language_de	englisch
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author	Li, Jinghui
spellingShingle	Li, Jinghui misc perovskite misc lead-free misc antimony doping misc orange-red emission Antimony doped $ Cs_{2} %$ SnCl_{6} $ with bright and stable emission
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topic_title	Antimony doped $ Cs_{2} %$ SnCl_{6} $ with bright and stable emission perovskite (dpeaa)DE-He213 lead-free (dpeaa)DE-He213 antimony doping (dpeaa)DE-He213 orange-red emission (dpeaa)DE-He213
topic	misc perovskite misc lead-free misc antimony doping misc orange-red emission
topic_unstemmed	misc perovskite misc lead-free misc antimony doping misc orange-red emission
topic_browse	misc perovskite misc lead-free misc antimony doping misc orange-red emission
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title	Antimony doped $ Cs_{2} %$ SnCl_{6} $ with bright and stable emission
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title_full	Antimony doped $ Cs_{2} %$ SnCl_{6} $ with bright and stable emission
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author_browse	Li, Jinghui Tan, Zhifang Hu, Manchen Chen, Chao Luo, Jiajun Li, Shunran Gao, Liang Xiao, Zewen Niu, Guangda Tang, Jiang
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author-letter	Li, Jinghui
doi_str_mv	10.1007/s12200-019-0907-4
title_sort	antimony doped $ cs_{2} %$ sncl_{6} $ with bright and stable emission
title_auth	Antimony doped $ Cs_{2} %$ SnCl_{6} $ with bright and stable emission
abstract	Abstract Lead halide perovskites, with high photoluminescence efficiency and narrow-band emission, are promising materials for display and lighting. However, the lead toxicity and environmental sensitivity hinder their potential applications. Herein, a new antimony-doped lead-free inorganic perovskites variant $ Cs_{2} %$ SnCl_{6} $:xSb is designed and synthesized. The perovskite variant $ Cs_{2} %$ SnCl_{6} $:xSb exhibits a broadband orange-red emission, with a photoluminescence quantum yield (PLQY) of 37%. The photoluminescence of $ Cs_{2} %$ SnCl_{6} $:xSb is caused by the ionoluminescence of $ Sb^{3+} $ within $ Cs_{2} %$ SnCl_{6} $ matrix, which is verified by temperature dependent photoluminescence (PL) and PL decay measurements. In addition, the all inorganic structure renders $ Cs_{2} %$ SnCl_{6} $:xSb with excellent thermal and water stability. Finally, a white light-emitting diode (white-LED) is fabricated by assembling $ Cs_{2} %$ SnCl_{6} $:0.59%Sb, $ Cs_{2} %$ SnCl_{6} $:2.75%Bi and $ Ba_{2} %$ Sr_{2} %$ SiO_{4} $: $ Eu^{2+} $ onto the commercial UV LED chips, and the color rendering index (CRI) reaches 81. © Higher Education Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019
abstractGer	Abstract Lead halide perovskites, with high photoluminescence efficiency and narrow-band emission, are promising materials for display and lighting. However, the lead toxicity and environmental sensitivity hinder their potential applications. Herein, a new antimony-doped lead-free inorganic perovskites variant $ Cs_{2} %$ SnCl_{6} $:xSb is designed and synthesized. The perovskite variant $ Cs_{2} %$ SnCl_{6} $:xSb exhibits a broadband orange-red emission, with a photoluminescence quantum yield (PLQY) of 37%. The photoluminescence of $ Cs_{2} %$ SnCl_{6} $:xSb is caused by the ionoluminescence of $ Sb^{3+} $ within $ Cs_{2} %$ SnCl_{6} $ matrix, which is verified by temperature dependent photoluminescence (PL) and PL decay measurements. In addition, the all inorganic structure renders $ Cs_{2} %$ SnCl_{6} $:xSb with excellent thermal and water stability. Finally, a white light-emitting diode (white-LED) is fabricated by assembling $ Cs_{2} %$ SnCl_{6} $:0.59%Sb, $ Cs_{2} %$ SnCl_{6} $:2.75%Bi and $ Ba_{2} %$ Sr_{2} %$ SiO_{4} $: $ Eu^{2+} $ onto the commercial UV LED chips, and the color rendering index (CRI) reaches 81. © Higher Education Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019
abstract_unstemmed	Abstract Lead halide perovskites, with high photoluminescence efficiency and narrow-band emission, are promising materials for display and lighting. However, the lead toxicity and environmental sensitivity hinder their potential applications. Herein, a new antimony-doped lead-free inorganic perovskites variant $ Cs_{2} %$ SnCl_{6} $:xSb is designed and synthesized. The perovskite variant $ Cs_{2} %$ SnCl_{6} $:xSb exhibits a broadband orange-red emission, with a photoluminescence quantum yield (PLQY) of 37%. The photoluminescence of $ Cs_{2} %$ SnCl_{6} $:xSb is caused by the ionoluminescence of $ Sb^{3+} $ within $ Cs_{2} %$ SnCl_{6} $ matrix, which is verified by temperature dependent photoluminescence (PL) and PL decay measurements. In addition, the all inorganic structure renders $ Cs_{2} %$ SnCl_{6} $:xSb with excellent thermal and water stability. Finally, a white light-emitting diode (white-LED) is fabricated by assembling $ Cs_{2} %$ SnCl_{6} $:0.59%Sb, $ Cs_{2} %$ SnCl_{6} $:2.75%Bi and $ Ba_{2} %$ Sr_{2} %$ SiO_{4} $: $ Eu^{2+} $ onto the commercial UV LED chips, and the color rendering index (CRI) reaches 81. © Higher Education Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019
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title_short	Antimony doped $ Cs_{2} %$ SnCl_{6} $ with bright and stable emission
url	https://dx.doi.org/10.1007/s12200-019-0907-4
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author2	Tan, Zhifang Hu, Manchen Chen, Chao Luo, Jiajun Li, Shunran Gao, Liang Xiao, Zewen Niu, Guangda Tang, Jiang
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Antimony doped $ Cs_{2} %$ SnCl_{6} $ with bright and stable emission

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Vorhandene Bände

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