Ways to increase the efficiency of solar cells with extremely thin absorption layers
Abstract The effect of design parameters, electrical properties, and technological modes of formation on the efficiency of the photoelectrical conversion of solar cells with extremely thin absorbing layers based on the $ SnO_{2} $:F/$ TiO_{2} $/$ In_{2} %$ S_{3} $/$ In_{x} %$ Pb_{1 − x} $S/CuSCN is...
Ausführliche Beschreibung
Autor*in: |
Gavrilov, S. A. [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2009 |
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Schlagwörter: |
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Anmerkung: |
© Pleiades Publishing, Ltd. 2009 |
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Übergeordnetes Werk: |
Enthalten in: Nanotechnologies in Russia - [Moskau] : Pleiades Publishing, 2008, 4(2009), 3-4 vom: Apr., Seite 237-243 |
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Übergeordnetes Werk: |
volume:4 ; year:2009 ; number:3-4 ; month:04 ; pages:237-243 |
Links: |
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DOI / URN: |
10.1134/S1995078009030112 |
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Katalog-ID: |
SPR025214624 |
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245 | 1 | 0 | |a Ways to increase the efficiency of solar cells with extremely thin absorption layers |
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520 | |a Abstract The effect of design parameters, electrical properties, and technological modes of formation on the efficiency of the photoelectrical conversion of solar cells with extremely thin absorbing layers based on the $ SnO_{2} $:F/$ TiO_{2} $/$ In_{2} %$ S_{3} $/$ In_{x} %$ Pb_{1 − x} $S/CuSCN is investigated. It is shown that both a decrease in resistance due to an increase in roughness and a decrease in the average grain size of the $ TiO_{2} $ films is attained with deposition using the sol-gel method under conditions of increased humidity. The use of Ni as the contact metal to a planarizing CuSCN layer provides the reduced value of the transient resistance. The optimization of the sequential resistance of the $ TiO_{2} $ film and contact resistance to the CuSCN layer provided an increase in the efficiency of photoelectric converters by a factor of more than four. The structures of solar cells formed in optimal technological modes showed the following characteristics: Jsc = 9 mA/$ cm^{2} $, Uoc = 720 mV, and they had an efficiency of 2.9%. | ||
650 | 4 | |a Solar Cell |7 (dpeaa)DE-He213 | |
650 | 4 | |a Ohmic Contact |7 (dpeaa)DE-He213 | |
650 | 4 | |a Recombination Loss |7 (dpeaa)DE-He213 | |
650 | 4 | |a CuSCN |7 (dpeaa)DE-He213 | |
650 | 4 | |a Photoelectric Converter |7 (dpeaa)DE-He213 | |
700 | 1 | |a Dronov, A. A. |4 aut | |
700 | 1 | |a Shevyakov, V. I. |4 aut | |
700 | 1 | |a Belov, A. N. |4 aut | |
700 | 1 | |a Poltoratskii, E. A. |4 aut | |
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10.1134/S1995078009030112 doi (DE-627)SPR025214624 (SPR)S1995078009030112-e DE-627 ger DE-627 rakwb eng Gavrilov, S. A. verfasserin aut Ways to increase the efficiency of solar cells with extremely thin absorption layers 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2009 Abstract The effect of design parameters, electrical properties, and technological modes of formation on the efficiency of the photoelectrical conversion of solar cells with extremely thin absorbing layers based on the $ SnO_{2} $:F/$ TiO_{2} $/$ In_{2} %$ S_{3} $/$ In_{x} %$ Pb_{1 − x} $S/CuSCN is investigated. It is shown that both a decrease in resistance due to an increase in roughness and a decrease in the average grain size of the $ TiO_{2} $ films is attained with deposition using the sol-gel method under conditions of increased humidity. The use of Ni as the contact metal to a planarizing CuSCN layer provides the reduced value of the transient resistance. The optimization of the sequential resistance of the $ TiO_{2} $ film and contact resistance to the CuSCN layer provided an increase in the efficiency of photoelectric converters by a factor of more than four. The structures of solar cells formed in optimal technological modes showed the following characteristics: Jsc = 9 mA/$ cm^{2} $, Uoc = 720 mV, and they had an efficiency of 2.9%. Solar Cell (dpeaa)DE-He213 Ohmic Contact (dpeaa)DE-He213 Recombination Loss (dpeaa)DE-He213 CuSCN (dpeaa)DE-He213 Photoelectric Converter (dpeaa)DE-He213 Dronov, A. A. aut Shevyakov, V. I. aut Belov, A. N. aut Poltoratskii, E. A. aut Enthalten in Nanotechnologies in Russia [Moskau] : Pleiades Publishing, 2008 4(2009), 3-4 vom: Apr., Seite 237-243 (DE-627)565518887 (DE-600)2424432-6 1995-0799 nnns volume:4 year:2009 number:3-4 month:04 pages:237-243 https://dx.doi.org/10.1134/S1995078009030112 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 4 2009 3-4 04 237-243 |
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10.1134/S1995078009030112 doi (DE-627)SPR025214624 (SPR)S1995078009030112-e DE-627 ger DE-627 rakwb eng Gavrilov, S. A. verfasserin aut Ways to increase the efficiency of solar cells with extremely thin absorption layers 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2009 Abstract The effect of design parameters, electrical properties, and technological modes of formation on the efficiency of the photoelectrical conversion of solar cells with extremely thin absorbing layers based on the $ SnO_{2} $:F/$ TiO_{2} $/$ In_{2} %$ S_{3} $/$ In_{x} %$ Pb_{1 − x} $S/CuSCN is investigated. It is shown that both a decrease in resistance due to an increase in roughness and a decrease in the average grain size of the $ TiO_{2} $ films is attained with deposition using the sol-gel method under conditions of increased humidity. The use of Ni as the contact metal to a planarizing CuSCN layer provides the reduced value of the transient resistance. The optimization of the sequential resistance of the $ TiO_{2} $ film and contact resistance to the CuSCN layer provided an increase in the efficiency of photoelectric converters by a factor of more than four. The structures of solar cells formed in optimal technological modes showed the following characteristics: Jsc = 9 mA/$ cm^{2} $, Uoc = 720 mV, and they had an efficiency of 2.9%. Solar Cell (dpeaa)DE-He213 Ohmic Contact (dpeaa)DE-He213 Recombination Loss (dpeaa)DE-He213 CuSCN (dpeaa)DE-He213 Photoelectric Converter (dpeaa)DE-He213 Dronov, A. A. aut Shevyakov, V. I. aut Belov, A. N. aut Poltoratskii, E. A. aut Enthalten in Nanotechnologies in Russia [Moskau] : Pleiades Publishing, 2008 4(2009), 3-4 vom: Apr., Seite 237-243 (DE-627)565518887 (DE-600)2424432-6 1995-0799 nnns volume:4 year:2009 number:3-4 month:04 pages:237-243 https://dx.doi.org/10.1134/S1995078009030112 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 4 2009 3-4 04 237-243 |
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10.1134/S1995078009030112 doi (DE-627)SPR025214624 (SPR)S1995078009030112-e DE-627 ger DE-627 rakwb eng Gavrilov, S. A. verfasserin aut Ways to increase the efficiency of solar cells with extremely thin absorption layers 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2009 Abstract The effect of design parameters, electrical properties, and technological modes of formation on the efficiency of the photoelectrical conversion of solar cells with extremely thin absorbing layers based on the $ SnO_{2} $:F/$ TiO_{2} $/$ In_{2} %$ S_{3} $/$ In_{x} %$ Pb_{1 − x} $S/CuSCN is investigated. It is shown that both a decrease in resistance due to an increase in roughness and a decrease in the average grain size of the $ TiO_{2} $ films is attained with deposition using the sol-gel method under conditions of increased humidity. The use of Ni as the contact metal to a planarizing CuSCN layer provides the reduced value of the transient resistance. The optimization of the sequential resistance of the $ TiO_{2} $ film and contact resistance to the CuSCN layer provided an increase in the efficiency of photoelectric converters by a factor of more than four. The structures of solar cells formed in optimal technological modes showed the following characteristics: Jsc = 9 mA/$ cm^{2} $, Uoc = 720 mV, and they had an efficiency of 2.9%. Solar Cell (dpeaa)DE-He213 Ohmic Contact (dpeaa)DE-He213 Recombination Loss (dpeaa)DE-He213 CuSCN (dpeaa)DE-He213 Photoelectric Converter (dpeaa)DE-He213 Dronov, A. A. aut Shevyakov, V. I. aut Belov, A. N. aut Poltoratskii, E. A. aut Enthalten in Nanotechnologies in Russia [Moskau] : Pleiades Publishing, 2008 4(2009), 3-4 vom: Apr., Seite 237-243 (DE-627)565518887 (DE-600)2424432-6 1995-0799 nnns volume:4 year:2009 number:3-4 month:04 pages:237-243 https://dx.doi.org/10.1134/S1995078009030112 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 4 2009 3-4 04 237-243 |
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10.1134/S1995078009030112 doi (DE-627)SPR025214624 (SPR)S1995078009030112-e DE-627 ger DE-627 rakwb eng Gavrilov, S. A. verfasserin aut Ways to increase the efficiency of solar cells with extremely thin absorption layers 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2009 Abstract The effect of design parameters, electrical properties, and technological modes of formation on the efficiency of the photoelectrical conversion of solar cells with extremely thin absorbing layers based on the $ SnO_{2} $:F/$ TiO_{2} $/$ In_{2} %$ S_{3} $/$ In_{x} %$ Pb_{1 − x} $S/CuSCN is investigated. It is shown that both a decrease in resistance due to an increase in roughness and a decrease in the average grain size of the $ TiO_{2} $ films is attained with deposition using the sol-gel method under conditions of increased humidity. The use of Ni as the contact metal to a planarizing CuSCN layer provides the reduced value of the transient resistance. The optimization of the sequential resistance of the $ TiO_{2} $ film and contact resistance to the CuSCN layer provided an increase in the efficiency of photoelectric converters by a factor of more than four. The structures of solar cells formed in optimal technological modes showed the following characteristics: Jsc = 9 mA/$ cm^{2} $, Uoc = 720 mV, and they had an efficiency of 2.9%. Solar Cell (dpeaa)DE-He213 Ohmic Contact (dpeaa)DE-He213 Recombination Loss (dpeaa)DE-He213 CuSCN (dpeaa)DE-He213 Photoelectric Converter (dpeaa)DE-He213 Dronov, A. A. aut Shevyakov, V. I. aut Belov, A. N. aut Poltoratskii, E. A. aut Enthalten in Nanotechnologies in Russia [Moskau] : Pleiades Publishing, 2008 4(2009), 3-4 vom: Apr., Seite 237-243 (DE-627)565518887 (DE-600)2424432-6 1995-0799 nnns volume:4 year:2009 number:3-4 month:04 pages:237-243 https://dx.doi.org/10.1134/S1995078009030112 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 4 2009 3-4 04 237-243 |
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10.1134/S1995078009030112 doi (DE-627)SPR025214624 (SPR)S1995078009030112-e DE-627 ger DE-627 rakwb eng Gavrilov, S. A. verfasserin aut Ways to increase the efficiency of solar cells with extremely thin absorption layers 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2009 Abstract The effect of design parameters, electrical properties, and technological modes of formation on the efficiency of the photoelectrical conversion of solar cells with extremely thin absorbing layers based on the $ SnO_{2} $:F/$ TiO_{2} $/$ In_{2} %$ S_{3} $/$ In_{x} %$ Pb_{1 − x} $S/CuSCN is investigated. It is shown that both a decrease in resistance due to an increase in roughness and a decrease in the average grain size of the $ TiO_{2} $ films is attained with deposition using the sol-gel method under conditions of increased humidity. The use of Ni as the contact metal to a planarizing CuSCN layer provides the reduced value of the transient resistance. The optimization of the sequential resistance of the $ TiO_{2} $ film and contact resistance to the CuSCN layer provided an increase in the efficiency of photoelectric converters by a factor of more than four. The structures of solar cells formed in optimal technological modes showed the following characteristics: Jsc = 9 mA/$ cm^{2} $, Uoc = 720 mV, and they had an efficiency of 2.9%. Solar Cell (dpeaa)DE-He213 Ohmic Contact (dpeaa)DE-He213 Recombination Loss (dpeaa)DE-He213 CuSCN (dpeaa)DE-He213 Photoelectric Converter (dpeaa)DE-He213 Dronov, A. A. aut Shevyakov, V. I. aut Belov, A. N. aut Poltoratskii, E. A. aut Enthalten in Nanotechnologies in Russia [Moskau] : Pleiades Publishing, 2008 4(2009), 3-4 vom: Apr., Seite 237-243 (DE-627)565518887 (DE-600)2424432-6 1995-0799 nnns volume:4 year:2009 number:3-4 month:04 pages:237-243 https://dx.doi.org/10.1134/S1995078009030112 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 4 2009 3-4 04 237-243 |
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Enthalten in Nanotechnologies in Russia 4(2009), 3-4 vom: Apr., Seite 237-243 volume:4 year:2009 number:3-4 month:04 pages:237-243 |
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Enthalten in Nanotechnologies in Russia 4(2009), 3-4 vom: Apr., Seite 237-243 volume:4 year:2009 number:3-4 month:04 pages:237-243 |
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Gavrilov, S. A. @@aut@@ Dronov, A. A. @@aut@@ Shevyakov, V. I. @@aut@@ Belov, A. N. @@aut@@ Poltoratskii, E. A. @@aut@@ |
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|
author |
Gavrilov, S. A. |
spellingShingle |
Gavrilov, S. A. misc Solar Cell misc Ohmic Contact misc Recombination Loss misc CuSCN misc Photoelectric Converter Ways to increase the efficiency of solar cells with extremely thin absorption layers |
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Ways to increase the efficiency of solar cells with extremely thin absorption layers Solar Cell (dpeaa)DE-He213 Ohmic Contact (dpeaa)DE-He213 Recombination Loss (dpeaa)DE-He213 CuSCN (dpeaa)DE-He213 Photoelectric Converter (dpeaa)DE-He213 |
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misc Solar Cell misc Ohmic Contact misc Recombination Loss misc CuSCN misc Photoelectric Converter |
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misc Solar Cell misc Ohmic Contact misc Recombination Loss misc CuSCN misc Photoelectric Converter |
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Ways to increase the efficiency of solar cells with extremely thin absorption layers |
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Nanotechnologies in Russia |
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Gavrilov, S. A. Dronov, A. A. Shevyakov, V. I. Belov, A. N. Poltoratskii, E. A. |
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Gavrilov, S. A. |
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10.1134/S1995078009030112 |
title_sort |
ways to increase the efficiency of solar cells with extremely thin absorption layers |
title_auth |
Ways to increase the efficiency of solar cells with extremely thin absorption layers |
abstract |
Abstract The effect of design parameters, electrical properties, and technological modes of formation on the efficiency of the photoelectrical conversion of solar cells with extremely thin absorbing layers based on the $ SnO_{2} $:F/$ TiO_{2} $/$ In_{2} %$ S_{3} $/$ In_{x} %$ Pb_{1 − x} $S/CuSCN is investigated. It is shown that both a decrease in resistance due to an increase in roughness and a decrease in the average grain size of the $ TiO_{2} $ films is attained with deposition using the sol-gel method under conditions of increased humidity. The use of Ni as the contact metal to a planarizing CuSCN layer provides the reduced value of the transient resistance. The optimization of the sequential resistance of the $ TiO_{2} $ film and contact resistance to the CuSCN layer provided an increase in the efficiency of photoelectric converters by a factor of more than four. The structures of solar cells formed in optimal technological modes showed the following characteristics: Jsc = 9 mA/$ cm^{2} $, Uoc = 720 mV, and they had an efficiency of 2.9%. © Pleiades Publishing, Ltd. 2009 |
abstractGer |
Abstract The effect of design parameters, electrical properties, and technological modes of formation on the efficiency of the photoelectrical conversion of solar cells with extremely thin absorbing layers based on the $ SnO_{2} $:F/$ TiO_{2} $/$ In_{2} %$ S_{3} $/$ In_{x} %$ Pb_{1 − x} $S/CuSCN is investigated. It is shown that both a decrease in resistance due to an increase in roughness and a decrease in the average grain size of the $ TiO_{2} $ films is attained with deposition using the sol-gel method under conditions of increased humidity. The use of Ni as the contact metal to a planarizing CuSCN layer provides the reduced value of the transient resistance. The optimization of the sequential resistance of the $ TiO_{2} $ film and contact resistance to the CuSCN layer provided an increase in the efficiency of photoelectric converters by a factor of more than four. The structures of solar cells formed in optimal technological modes showed the following characteristics: Jsc = 9 mA/$ cm^{2} $, Uoc = 720 mV, and they had an efficiency of 2.9%. © Pleiades Publishing, Ltd. 2009 |
abstract_unstemmed |
Abstract The effect of design parameters, electrical properties, and technological modes of formation on the efficiency of the photoelectrical conversion of solar cells with extremely thin absorbing layers based on the $ SnO_{2} $:F/$ TiO_{2} $/$ In_{2} %$ S_{3} $/$ In_{x} %$ Pb_{1 − x} $S/CuSCN is investigated. It is shown that both a decrease in resistance due to an increase in roughness and a decrease in the average grain size of the $ TiO_{2} $ films is attained with deposition using the sol-gel method under conditions of increased humidity. The use of Ni as the contact metal to a planarizing CuSCN layer provides the reduced value of the transient resistance. The optimization of the sequential resistance of the $ TiO_{2} $ film and contact resistance to the CuSCN layer provided an increase in the efficiency of photoelectric converters by a factor of more than four. The structures of solar cells formed in optimal technological modes showed the following characteristics: Jsc = 9 mA/$ cm^{2} $, Uoc = 720 mV, and they had an efficiency of 2.9%. © Pleiades Publishing, Ltd. 2009 |
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title_short |
Ways to increase the efficiency of solar cells with extremely thin absorption layers |
url |
https://dx.doi.org/10.1134/S1995078009030112 |
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Dronov, A. A. Shevyakov, V. I. Belov, A. N. Poltoratskii, E. A. |
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Dronov, A. A. Shevyakov, V. I. Belov, A. N. Poltoratskii, E. A. |
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10.1134/S1995078009030112 |
up_date |
2024-07-03T14:36:15.918Z |
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|
score |
7.400446 |