Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz
Abstract A 0.18 µm CMOS low noise amplifier (LNA) by utilizing noise-canceling technique was designed and implemented in this paper. Current-reuse and self-bias techniques were used in the first stage to achieve input matching and reduce power consumption. The core size of the proposed CMOS LNA circ...
Ausführliche Beschreibung
Autor*in: |
Qin, Guoxuan [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2017 |
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Schlagwörter: |
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Anmerkung: |
© Tianjin University and Springer-Verlag Berlin Heidelberg 2017 |
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Übergeordnetes Werk: |
Enthalten in: Transactions of Tianjin University - Tianjin : Univ., 1995, 23(2017), 2 vom: März, Seite 168-175 |
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Übergeordnetes Werk: |
volume:23 ; year:2017 ; number:2 ; month:03 ; pages:168-175 |
Links: |
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DOI / URN: |
10.1007/s12209-017-0040-7 |
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Katalog-ID: |
SPR025363018 |
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100 | 1 | |a Qin, Guoxuan |e verfasserin |4 aut | |
245 | 1 | 0 | |a Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz |
264 | 1 | |c 2017 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a Computermedien |b c |2 rdamedia | ||
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500 | |a © Tianjin University and Springer-Verlag Berlin Heidelberg 2017 | ||
520 | |a Abstract A 0.18 µm CMOS low noise amplifier (LNA) by utilizing noise-canceling technique was designed and implemented in this paper. Current-reuse and self-bias techniques were used in the first stage to achieve input matching and reduce power consumption. The core size of the proposed CMOS LNA circuit without inductor was only 128 µm × 226 µm. The measured power gain and noise figure of the proposed LNA were 20.6 and 1.9 dB, respectively. The 3-dB bandwidth covers frequency from 0.1 to 1.2 GHz. When the chip was operated at a supply voltage of 1.8 V, it consumed 25.69 mW. The high performance of the proposed LNA makes it suitable for multi-standard low-cost receiver front-ends within the above frequency range. | ||
650 | 4 | |a CMOS |7 (dpeaa)DE-He213 | |
650 | 4 | |a Low noise amplifier (LNA) |7 (dpeaa)DE-He213 | |
650 | 4 | |a Multiband |7 (dpeaa)DE-He213 | |
650 | 4 | |a Noise-canceling |7 (dpeaa)DE-He213 | |
650 | 4 | |a Self-bias wide band |7 (dpeaa)DE-He213 | |
700 | 1 | |a Jin, Mengmeng |4 aut | |
700 | 1 | |a Tu, Guoping |4 aut | |
700 | 1 | |a Yan, Yuexing |4 aut | |
700 | 1 | |a Yang, Laichun |4 aut | |
700 | 1 | |a Xu, Yanmeng |4 aut | |
700 | 1 | |a Ma, Jianguo |4 aut | |
773 | 0 | 8 | |i Enthalten in |t Transactions of Tianjin University |d Tianjin : Univ., 1995 |g 23(2017), 2 vom: März, Seite 168-175 |w (DE-627)592072681 |w (DE-600)2479763-7 |x 1995-8196 |7 nnns |
773 | 1 | 8 | |g volume:23 |g year:2017 |g number:2 |g month:03 |g pages:168-175 |
856 | 4 | 0 | |u https://dx.doi.org/10.1007/s12209-017-0040-7 |z lizenzpflichtig |3 Volltext |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_SPRINGER | ||
912 | |a GBV_ILN_11 | ||
912 | |a GBV_ILN_20 | ||
912 | |a GBV_ILN_22 | ||
912 | |a GBV_ILN_23 | ||
912 | |a GBV_ILN_24 | ||
912 | |a GBV_ILN_31 | ||
912 | |a GBV_ILN_32 | ||
912 | |a GBV_ILN_39 | ||
912 | |a GBV_ILN_40 | ||
912 | |a GBV_ILN_60 | ||
912 | |a GBV_ILN_62 | ||
912 | |a GBV_ILN_63 | ||
912 | |a GBV_ILN_65 | ||
912 | |a GBV_ILN_69 | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_73 | ||
912 | |a GBV_ILN_74 | ||
912 | |a GBV_ILN_90 | ||
912 | |a GBV_ILN_95 | ||
912 | |a GBV_ILN_100 | ||
912 | |a GBV_ILN_105 | ||
912 | |a GBV_ILN_110 | ||
912 | |a GBV_ILN_120 | ||
912 | |a GBV_ILN_121 | ||
912 | |a GBV_ILN_138 | ||
912 | |a GBV_ILN_150 | ||
912 | |a GBV_ILN_151 | ||
912 | |a GBV_ILN_152 | ||
912 | |a GBV_ILN_161 | ||
912 | |a GBV_ILN_170 | ||
912 | |a GBV_ILN_171 | ||
912 | |a GBV_ILN_187 | ||
912 | |a GBV_ILN_206 | ||
912 | |a GBV_ILN_213 | ||
912 | |a GBV_ILN_224 | ||
912 | |a GBV_ILN_230 | ||
912 | |a GBV_ILN_250 | ||
912 | |a GBV_ILN_281 | ||
912 | |a GBV_ILN_285 | ||
912 | |a GBV_ILN_293 | ||
912 | |a GBV_ILN_370 | ||
912 | |a GBV_ILN_374 | ||
912 | |a GBV_ILN_602 | ||
912 | |a GBV_ILN_636 | ||
912 | |a GBV_ILN_647 | ||
912 | |a GBV_ILN_702 | ||
912 | |a GBV_ILN_2001 | ||
912 | |a GBV_ILN_2003 | ||
912 | |a GBV_ILN_2004 | ||
912 | |a GBV_ILN_2005 | ||
912 | |a GBV_ILN_2006 | ||
912 | |a GBV_ILN_2007 | ||
912 | |a GBV_ILN_2008 | ||
912 | |a GBV_ILN_2009 | ||
912 | |a GBV_ILN_2010 | ||
912 | |a GBV_ILN_2011 | ||
912 | |a GBV_ILN_2014 | ||
912 | |a GBV_ILN_2015 | ||
912 | |a GBV_ILN_2018 | ||
912 | |a GBV_ILN_2020 | ||
912 | |a GBV_ILN_2021 | ||
912 | |a GBV_ILN_2025 | ||
912 | |a GBV_ILN_2026 | ||
912 | |a GBV_ILN_2027 | ||
912 | |a GBV_ILN_2031 | ||
912 | |a GBV_ILN_2034 | ||
912 | |a GBV_ILN_2036 | ||
912 | |a GBV_ILN_2037 | ||
912 | |a GBV_ILN_2038 | ||
912 | |a GBV_ILN_2039 | ||
912 | |a GBV_ILN_2044 | ||
912 | |a GBV_ILN_2048 | ||
912 | |a GBV_ILN_2049 | ||
912 | |a GBV_ILN_2050 | ||
912 | |a GBV_ILN_2055 | ||
912 | |a GBV_ILN_2056 | ||
912 | |a GBV_ILN_2057 | ||
912 | |a GBV_ILN_2059 | ||
912 | |a GBV_ILN_2061 | ||
912 | |a GBV_ILN_2064 | ||
912 | |a GBV_ILN_2065 | ||
912 | |a GBV_ILN_2068 | ||
912 | |a GBV_ILN_2070 | ||
912 | |a GBV_ILN_2086 | ||
912 | |a GBV_ILN_2088 | ||
912 | |a GBV_ILN_2093 | ||
912 | |a GBV_ILN_2106 | ||
912 | |a GBV_ILN_2107 | ||
912 | |a GBV_ILN_2108 | ||
912 | |a GBV_ILN_2110 | ||
912 | |a GBV_ILN_2111 | ||
912 | |a GBV_ILN_2112 | ||
912 | |a GBV_ILN_2113 | ||
912 | |a GBV_ILN_2116 | ||
912 | |a GBV_ILN_2118 | ||
912 | |a GBV_ILN_2119 | ||
912 | |a GBV_ILN_2122 | ||
912 | |a GBV_ILN_2129 | ||
912 | |a GBV_ILN_2143 | ||
912 | |a GBV_ILN_2144 | ||
912 | |a GBV_ILN_2147 | ||
912 | |a GBV_ILN_2148 | ||
912 | |a GBV_ILN_2152 | ||
912 | |a GBV_ILN_2153 | ||
912 | |a GBV_ILN_2188 | ||
912 | |a GBV_ILN_2190 | ||
912 | |a GBV_ILN_2232 | ||
912 | |a GBV_ILN_2336 | ||
912 | |a GBV_ILN_2446 | ||
912 | |a GBV_ILN_2470 | ||
912 | |a GBV_ILN_2472 | ||
912 | |a GBV_ILN_2507 | ||
912 | |a GBV_ILN_2522 | ||
912 | |a GBV_ILN_2548 | ||
912 | |a GBV_ILN_2700 | ||
912 | |a GBV_ILN_2817 | ||
912 | |a GBV_ILN_4012 | ||
912 | |a GBV_ILN_4035 | ||
912 | |a GBV_ILN_4037 | ||
912 | |a GBV_ILN_4046 | ||
912 | |a GBV_ILN_4112 | ||
912 | |a GBV_ILN_4125 | ||
912 | |a GBV_ILN_4126 | ||
912 | |a GBV_ILN_4242 | ||
912 | |a GBV_ILN_4246 | ||
912 | |a GBV_ILN_4249 | ||
912 | |a GBV_ILN_4251 | ||
912 | |a GBV_ILN_4277 | ||
912 | |a GBV_ILN_4305 | ||
912 | |a GBV_ILN_4306 | ||
912 | |a GBV_ILN_4307 | ||
912 | |a GBV_ILN_4313 | ||
912 | |a GBV_ILN_4322 | ||
912 | |a GBV_ILN_4323 | ||
912 | |a GBV_ILN_4324 | ||
912 | |a GBV_ILN_4325 | ||
912 | |a GBV_ILN_4326 | ||
912 | |a GBV_ILN_4333 | ||
912 | |a GBV_ILN_4334 | ||
912 | |a GBV_ILN_4335 | ||
912 | |a GBV_ILN_4336 | ||
912 | |a GBV_ILN_4338 | ||
912 | |a GBV_ILN_4346 | ||
912 | |a GBV_ILN_4367 | ||
912 | |a GBV_ILN_4392 | ||
912 | |a GBV_ILN_4393 | ||
912 | |a GBV_ILN_4700 | ||
912 | |a GBV_ILN_4753 | ||
951 | |a AR | ||
952 | |d 23 |j 2017 |e 2 |c 03 |h 168-175 |
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2017 |
publishDate |
2017 |
allfields |
10.1007/s12209-017-0040-7 doi (DE-627)SPR025363018 (SPR)s12209-017-0040-7-e DE-627 ger DE-627 rakwb eng Qin, Guoxuan verfasserin aut Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tianjin University and Springer-Verlag Berlin Heidelberg 2017 Abstract A 0.18 µm CMOS low noise amplifier (LNA) by utilizing noise-canceling technique was designed and implemented in this paper. Current-reuse and self-bias techniques were used in the first stage to achieve input matching and reduce power consumption. The core size of the proposed CMOS LNA circuit without inductor was only 128 µm × 226 µm. The measured power gain and noise figure of the proposed LNA were 20.6 and 1.9 dB, respectively. The 3-dB bandwidth covers frequency from 0.1 to 1.2 GHz. When the chip was operated at a supply voltage of 1.8 V, it consumed 25.69 mW. The high performance of the proposed LNA makes it suitable for multi-standard low-cost receiver front-ends within the above frequency range. CMOS (dpeaa)DE-He213 Low noise amplifier (LNA) (dpeaa)DE-He213 Multiband (dpeaa)DE-He213 Noise-canceling (dpeaa)DE-He213 Self-bias wide band (dpeaa)DE-He213 Jin, Mengmeng aut Tu, Guoping aut Yan, Yuexing aut Yang, Laichun aut Xu, Yanmeng aut Ma, Jianguo aut Enthalten in Transactions of Tianjin University Tianjin : Univ., 1995 23(2017), 2 vom: März, Seite 168-175 (DE-627)592072681 (DE-600)2479763-7 1995-8196 nnns volume:23 year:2017 number:2 month:03 pages:168-175 https://dx.doi.org/10.1007/s12209-017-0040-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 23 2017 2 03 168-175 |
spelling |
10.1007/s12209-017-0040-7 doi (DE-627)SPR025363018 (SPR)s12209-017-0040-7-e DE-627 ger DE-627 rakwb eng Qin, Guoxuan verfasserin aut Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tianjin University and Springer-Verlag Berlin Heidelberg 2017 Abstract A 0.18 µm CMOS low noise amplifier (LNA) by utilizing noise-canceling technique was designed and implemented in this paper. Current-reuse and self-bias techniques were used in the first stage to achieve input matching and reduce power consumption. The core size of the proposed CMOS LNA circuit without inductor was only 128 µm × 226 µm. The measured power gain and noise figure of the proposed LNA were 20.6 and 1.9 dB, respectively. The 3-dB bandwidth covers frequency from 0.1 to 1.2 GHz. When the chip was operated at a supply voltage of 1.8 V, it consumed 25.69 mW. The high performance of the proposed LNA makes it suitable for multi-standard low-cost receiver front-ends within the above frequency range. CMOS (dpeaa)DE-He213 Low noise amplifier (LNA) (dpeaa)DE-He213 Multiband (dpeaa)DE-He213 Noise-canceling (dpeaa)DE-He213 Self-bias wide band (dpeaa)DE-He213 Jin, Mengmeng aut Tu, Guoping aut Yan, Yuexing aut Yang, Laichun aut Xu, Yanmeng aut Ma, Jianguo aut Enthalten in Transactions of Tianjin University Tianjin : Univ., 1995 23(2017), 2 vom: März, Seite 168-175 (DE-627)592072681 (DE-600)2479763-7 1995-8196 nnns volume:23 year:2017 number:2 month:03 pages:168-175 https://dx.doi.org/10.1007/s12209-017-0040-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 23 2017 2 03 168-175 |
allfields_unstemmed |
10.1007/s12209-017-0040-7 doi (DE-627)SPR025363018 (SPR)s12209-017-0040-7-e DE-627 ger DE-627 rakwb eng Qin, Guoxuan verfasserin aut Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tianjin University and Springer-Verlag Berlin Heidelberg 2017 Abstract A 0.18 µm CMOS low noise amplifier (LNA) by utilizing noise-canceling technique was designed and implemented in this paper. Current-reuse and self-bias techniques were used in the first stage to achieve input matching and reduce power consumption. The core size of the proposed CMOS LNA circuit without inductor was only 128 µm × 226 µm. The measured power gain and noise figure of the proposed LNA were 20.6 and 1.9 dB, respectively. The 3-dB bandwidth covers frequency from 0.1 to 1.2 GHz. When the chip was operated at a supply voltage of 1.8 V, it consumed 25.69 mW. The high performance of the proposed LNA makes it suitable for multi-standard low-cost receiver front-ends within the above frequency range. CMOS (dpeaa)DE-He213 Low noise amplifier (LNA) (dpeaa)DE-He213 Multiband (dpeaa)DE-He213 Noise-canceling (dpeaa)DE-He213 Self-bias wide band (dpeaa)DE-He213 Jin, Mengmeng aut Tu, Guoping aut Yan, Yuexing aut Yang, Laichun aut Xu, Yanmeng aut Ma, Jianguo aut Enthalten in Transactions of Tianjin University Tianjin : Univ., 1995 23(2017), 2 vom: März, Seite 168-175 (DE-627)592072681 (DE-600)2479763-7 1995-8196 nnns volume:23 year:2017 number:2 month:03 pages:168-175 https://dx.doi.org/10.1007/s12209-017-0040-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 23 2017 2 03 168-175 |
allfieldsGer |
10.1007/s12209-017-0040-7 doi (DE-627)SPR025363018 (SPR)s12209-017-0040-7-e DE-627 ger DE-627 rakwb eng Qin, Guoxuan verfasserin aut Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tianjin University and Springer-Verlag Berlin Heidelberg 2017 Abstract A 0.18 µm CMOS low noise amplifier (LNA) by utilizing noise-canceling technique was designed and implemented in this paper. Current-reuse and self-bias techniques were used in the first stage to achieve input matching and reduce power consumption. The core size of the proposed CMOS LNA circuit without inductor was only 128 µm × 226 µm. The measured power gain and noise figure of the proposed LNA were 20.6 and 1.9 dB, respectively. The 3-dB bandwidth covers frequency from 0.1 to 1.2 GHz. When the chip was operated at a supply voltage of 1.8 V, it consumed 25.69 mW. The high performance of the proposed LNA makes it suitable for multi-standard low-cost receiver front-ends within the above frequency range. CMOS (dpeaa)DE-He213 Low noise amplifier (LNA) (dpeaa)DE-He213 Multiband (dpeaa)DE-He213 Noise-canceling (dpeaa)DE-He213 Self-bias wide band (dpeaa)DE-He213 Jin, Mengmeng aut Tu, Guoping aut Yan, Yuexing aut Yang, Laichun aut Xu, Yanmeng aut Ma, Jianguo aut Enthalten in Transactions of Tianjin University Tianjin : Univ., 1995 23(2017), 2 vom: März, Seite 168-175 (DE-627)592072681 (DE-600)2479763-7 1995-8196 nnns volume:23 year:2017 number:2 month:03 pages:168-175 https://dx.doi.org/10.1007/s12209-017-0040-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 23 2017 2 03 168-175 |
allfieldsSound |
10.1007/s12209-017-0040-7 doi (DE-627)SPR025363018 (SPR)s12209-017-0040-7-e DE-627 ger DE-627 rakwb eng Qin, Guoxuan verfasserin aut Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tianjin University and Springer-Verlag Berlin Heidelberg 2017 Abstract A 0.18 µm CMOS low noise amplifier (LNA) by utilizing noise-canceling technique was designed and implemented in this paper. Current-reuse and self-bias techniques were used in the first stage to achieve input matching and reduce power consumption. The core size of the proposed CMOS LNA circuit without inductor was only 128 µm × 226 µm. The measured power gain and noise figure of the proposed LNA were 20.6 and 1.9 dB, respectively. The 3-dB bandwidth covers frequency from 0.1 to 1.2 GHz. When the chip was operated at a supply voltage of 1.8 V, it consumed 25.69 mW. The high performance of the proposed LNA makes it suitable for multi-standard low-cost receiver front-ends within the above frequency range. CMOS (dpeaa)DE-He213 Low noise amplifier (LNA) (dpeaa)DE-He213 Multiband (dpeaa)DE-He213 Noise-canceling (dpeaa)DE-He213 Self-bias wide band (dpeaa)DE-He213 Jin, Mengmeng aut Tu, Guoping aut Yan, Yuexing aut Yang, Laichun aut Xu, Yanmeng aut Ma, Jianguo aut Enthalten in Transactions of Tianjin University Tianjin : Univ., 1995 23(2017), 2 vom: März, Seite 168-175 (DE-627)592072681 (DE-600)2479763-7 1995-8196 nnns volume:23 year:2017 number:2 month:03 pages:168-175 https://dx.doi.org/10.1007/s12209-017-0040-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 23 2017 2 03 168-175 |
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Enthalten in Transactions of Tianjin University 23(2017), 2 vom: März, Seite 168-175 volume:23 year:2017 number:2 month:03 pages:168-175 |
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Enthalten in Transactions of Tianjin University 23(2017), 2 vom: März, Seite 168-175 volume:23 year:2017 number:2 month:03 pages:168-175 |
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CMOS Low noise amplifier (LNA) Multiband Noise-canceling Self-bias wide band |
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Transactions of Tianjin University |
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Qin, Guoxuan @@aut@@ Jin, Mengmeng @@aut@@ Tu, Guoping @@aut@@ Yan, Yuexing @@aut@@ Yang, Laichun @@aut@@ Xu, Yanmeng @@aut@@ Ma, Jianguo @@aut@@ |
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|
author |
Qin, Guoxuan |
spellingShingle |
Qin, Guoxuan misc CMOS misc Low noise amplifier (LNA) misc Multiband misc Noise-canceling misc Self-bias wide band Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz |
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topic_title |
Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz CMOS (dpeaa)DE-He213 Low noise amplifier (LNA) (dpeaa)DE-He213 Multiband (dpeaa)DE-He213 Noise-canceling (dpeaa)DE-He213 Self-bias wide band (dpeaa)DE-He213 |
topic |
misc CMOS misc Low noise amplifier (LNA) misc Multiband misc Noise-canceling misc Self-bias wide band |
topic_unstemmed |
misc CMOS misc Low noise amplifier (LNA) misc Multiband misc Noise-canceling misc Self-bias wide band |
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misc CMOS misc Low noise amplifier (LNA) misc Multiband misc Noise-canceling misc Self-bias wide band |
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Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz |
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title_full |
Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz |
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Qin, Guoxuan |
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Transactions of Tianjin University |
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Qin, Guoxuan Jin, Mengmeng Tu, Guoping Yan, Yuexing Yang, Laichun Xu, Yanmeng Ma, Jianguo |
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23 |
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Elektronische Aufsätze |
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Qin, Guoxuan |
doi_str_mv |
10.1007/s12209-017-0040-7 |
title_sort |
inductorless cmos low noise amplifier for multiband application in 0.1–1.2 ghz |
title_auth |
Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz |
abstract |
Abstract A 0.18 µm CMOS low noise amplifier (LNA) by utilizing noise-canceling technique was designed and implemented in this paper. Current-reuse and self-bias techniques were used in the first stage to achieve input matching and reduce power consumption. The core size of the proposed CMOS LNA circuit without inductor was only 128 µm × 226 µm. The measured power gain and noise figure of the proposed LNA were 20.6 and 1.9 dB, respectively. The 3-dB bandwidth covers frequency from 0.1 to 1.2 GHz. When the chip was operated at a supply voltage of 1.8 V, it consumed 25.69 mW. The high performance of the proposed LNA makes it suitable for multi-standard low-cost receiver front-ends within the above frequency range. © Tianjin University and Springer-Verlag Berlin Heidelberg 2017 |
abstractGer |
Abstract A 0.18 µm CMOS low noise amplifier (LNA) by utilizing noise-canceling technique was designed and implemented in this paper. Current-reuse and self-bias techniques were used in the first stage to achieve input matching and reduce power consumption. The core size of the proposed CMOS LNA circuit without inductor was only 128 µm × 226 µm. The measured power gain and noise figure of the proposed LNA were 20.6 and 1.9 dB, respectively. The 3-dB bandwidth covers frequency from 0.1 to 1.2 GHz. When the chip was operated at a supply voltage of 1.8 V, it consumed 25.69 mW. The high performance of the proposed LNA makes it suitable for multi-standard low-cost receiver front-ends within the above frequency range. © Tianjin University and Springer-Verlag Berlin Heidelberg 2017 |
abstract_unstemmed |
Abstract A 0.18 µm CMOS low noise amplifier (LNA) by utilizing noise-canceling technique was designed and implemented in this paper. Current-reuse and self-bias techniques were used in the first stage to achieve input matching and reduce power consumption. The core size of the proposed CMOS LNA circuit without inductor was only 128 µm × 226 µm. The measured power gain and noise figure of the proposed LNA were 20.6 and 1.9 dB, respectively. The 3-dB bandwidth covers frequency from 0.1 to 1.2 GHz. When the chip was operated at a supply voltage of 1.8 V, it consumed 25.69 mW. The high performance of the proposed LNA makes it suitable for multi-standard low-cost receiver front-ends within the above frequency range. © Tianjin University and Springer-Verlag Berlin Heidelberg 2017 |
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title_short |
Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz |
url |
https://dx.doi.org/10.1007/s12209-017-0040-7 |
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Jin, Mengmeng Tu, Guoping Yan, Yuexing Yang, Laichun Xu, Yanmeng Ma, Jianguo |
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Jin, Mengmeng Tu, Guoping Yan, Yuexing Yang, Laichun Xu, Yanmeng Ma, Jianguo |
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10.1007/s12209-017-0040-7 |
up_date |
2024-07-03T15:32:38.196Z |
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|
score |
7.400523 |