Magnetic properties of vanadium-doped silicon carbide nanowires
Abstract This study reports the magnetic properties of vanadium (V) doped single crystalline silicon carbide nanowires. The first principle calculation indicated that the V-doped cubic SiC phase can exhibit half-metallic ferromagnetic properties that are essential for the realization of spintronic d...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Seong, Han-Kyu [verfasserIn] Park, Tae-Eon [verfasserIn] Lee, Seung-Cheol [verfasserIn] Lee, Kwang-Ryeol [verfasserIn] Park, Jae-Kwan [verfasserIn] Choi, Heon-Jin [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2009 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Metals and materials international - Sŏul : Inst., 1995, 15(2009), 1 vom: Feb., Seite 107-111 |
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| Übergeordnetes Werk: |
volume:15 ; year:2009 ; number:1 ; month:02 ; pages:107-111 |
| Links: |
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| DOI / URN: |
10.1007/s12540-009-0107-7 |
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| Katalog-ID: |
SPR026063336 |
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| 520 | |a Abstract This study reports the magnetic properties of vanadium (V) doped single crystalline silicon carbide nanowires. The first principle calculation indicated that the V-doped cubic SiC phase can exhibit half-metallic ferromagnetic properties that are essential for the realization of spintronic devices. Based on this calculation, V-doped SiC nanowires were fabricated in a chemical vapor deposition process. The single crystalline β-SiC nanowires, which are doped with ca. 4 at.% of V, had diameters of < 100 nm and a length of several µm. High-resolution transmission electron microscopy observations revealed vanadium carbide (VC) phases in the nanowires, even at this low concentration of dopants. Magnetic characterization implies that the nanowires are a mixture of the diamagnetic phase of VC and ferro- or paramagnetic phases of V-doped SiC. These results suggest that the doping of transition metal having high solubility to the SiC phase can lead to the realization of dilute magnetic semiconductor behavior at very low temperature. | ||
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| 700 | 1 | |a Park, Jae-Kwan |e verfasserin |4 aut | |
| 700 | 1 | |a Choi, Heon-Jin |e verfasserin |4 aut | |
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10.1007/s12540-009-0107-7 doi (DE-627)SPR026063336 (SPR)s12540-009-0107-7-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Seong, Han-Kyu verfasserin aut Magnetic properties of vanadium-doped silicon carbide nanowires 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This study reports the magnetic properties of vanadium (V) doped single crystalline silicon carbide nanowires. The first principle calculation indicated that the V-doped cubic SiC phase can exhibit half-metallic ferromagnetic properties that are essential for the realization of spintronic devices. Based on this calculation, V-doped SiC nanowires were fabricated in a chemical vapor deposition process. The single crystalline β-SiC nanowires, which are doped with ca. 4 at.% of V, had diameters of < 100 nm and a length of several µm. High-resolution transmission electron microscopy observations revealed vanadium carbide (VC) phases in the nanowires, even at this low concentration of dopants. Magnetic characterization implies that the nanowires are a mixture of the diamagnetic phase of VC and ferro- or paramagnetic phases of V-doped SiC. These results suggest that the doping of transition metal having high solubility to the SiC phase can lead to the realization of dilute magnetic semiconductor behavior at very low temperature. Silicon carbide nanowires (dpeaa)DE-He213 Doping (dpeaa)DE-He213 Diluted magnetic semiconductor (dpeaa)DE-He213 Park, Tae-Eon verfasserin aut Lee, Seung-Cheol verfasserin aut Lee, Kwang-Ryeol verfasserin aut Park, Jae-Kwan verfasserin aut Choi, Heon-Jin verfasserin aut Enthalten in Metals and materials international Sŏul : Inst., 1995 15(2009), 1 vom: Feb., Seite 107-111 (DE-627)60059405X (DE-600)2496162-0 2005-4149 nnns volume:15 year:2009 number:1 month:02 pages:107-111 https://dx.doi.org/10.1007/s12540-009-0107-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 15 2009 1 02 107-111 |
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10.1007/s12540-009-0107-7 doi (DE-627)SPR026063336 (SPR)s12540-009-0107-7-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Seong, Han-Kyu verfasserin aut Magnetic properties of vanadium-doped silicon carbide nanowires 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This study reports the magnetic properties of vanadium (V) doped single crystalline silicon carbide nanowires. The first principle calculation indicated that the V-doped cubic SiC phase can exhibit half-metallic ferromagnetic properties that are essential for the realization of spintronic devices. Based on this calculation, V-doped SiC nanowires were fabricated in a chemical vapor deposition process. The single crystalline β-SiC nanowires, which are doped with ca. 4 at.% of V, had diameters of < 100 nm and a length of several µm. High-resolution transmission electron microscopy observations revealed vanadium carbide (VC) phases in the nanowires, even at this low concentration of dopants. Magnetic characterization implies that the nanowires are a mixture of the diamagnetic phase of VC and ferro- or paramagnetic phases of V-doped SiC. These results suggest that the doping of transition metal having high solubility to the SiC phase can lead to the realization of dilute magnetic semiconductor behavior at very low temperature. Silicon carbide nanowires (dpeaa)DE-He213 Doping (dpeaa)DE-He213 Diluted magnetic semiconductor (dpeaa)DE-He213 Park, Tae-Eon verfasserin aut Lee, Seung-Cheol verfasserin aut Lee, Kwang-Ryeol verfasserin aut Park, Jae-Kwan verfasserin aut Choi, Heon-Jin verfasserin aut Enthalten in Metals and materials international Sŏul : Inst., 1995 15(2009), 1 vom: Feb., Seite 107-111 (DE-627)60059405X (DE-600)2496162-0 2005-4149 nnns volume:15 year:2009 number:1 month:02 pages:107-111 https://dx.doi.org/10.1007/s12540-009-0107-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 15 2009 1 02 107-111 |
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10.1007/s12540-009-0107-7 doi (DE-627)SPR026063336 (SPR)s12540-009-0107-7-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Seong, Han-Kyu verfasserin aut Magnetic properties of vanadium-doped silicon carbide nanowires 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This study reports the magnetic properties of vanadium (V) doped single crystalline silicon carbide nanowires. The first principle calculation indicated that the V-doped cubic SiC phase can exhibit half-metallic ferromagnetic properties that are essential for the realization of spintronic devices. Based on this calculation, V-doped SiC nanowires were fabricated in a chemical vapor deposition process. The single crystalline β-SiC nanowires, which are doped with ca. 4 at.% of V, had diameters of < 100 nm and a length of several µm. High-resolution transmission electron microscopy observations revealed vanadium carbide (VC) phases in the nanowires, even at this low concentration of dopants. Magnetic characterization implies that the nanowires are a mixture of the diamagnetic phase of VC and ferro- or paramagnetic phases of V-doped SiC. These results suggest that the doping of transition metal having high solubility to the SiC phase can lead to the realization of dilute magnetic semiconductor behavior at very low temperature. Silicon carbide nanowires (dpeaa)DE-He213 Doping (dpeaa)DE-He213 Diluted magnetic semiconductor (dpeaa)DE-He213 Park, Tae-Eon verfasserin aut Lee, Seung-Cheol verfasserin aut Lee, Kwang-Ryeol verfasserin aut Park, Jae-Kwan verfasserin aut Choi, Heon-Jin verfasserin aut Enthalten in Metals and materials international Sŏul : Inst., 1995 15(2009), 1 vom: Feb., Seite 107-111 (DE-627)60059405X (DE-600)2496162-0 2005-4149 nnns volume:15 year:2009 number:1 month:02 pages:107-111 https://dx.doi.org/10.1007/s12540-009-0107-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 15 2009 1 02 107-111 |
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10.1007/s12540-009-0107-7 doi (DE-627)SPR026063336 (SPR)s12540-009-0107-7-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Seong, Han-Kyu verfasserin aut Magnetic properties of vanadium-doped silicon carbide nanowires 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This study reports the magnetic properties of vanadium (V) doped single crystalline silicon carbide nanowires. The first principle calculation indicated that the V-doped cubic SiC phase can exhibit half-metallic ferromagnetic properties that are essential for the realization of spintronic devices. Based on this calculation, V-doped SiC nanowires were fabricated in a chemical vapor deposition process. The single crystalline β-SiC nanowires, which are doped with ca. 4 at.% of V, had diameters of < 100 nm and a length of several µm. High-resolution transmission electron microscopy observations revealed vanadium carbide (VC) phases in the nanowires, even at this low concentration of dopants. Magnetic characterization implies that the nanowires are a mixture of the diamagnetic phase of VC and ferro- or paramagnetic phases of V-doped SiC. These results suggest that the doping of transition metal having high solubility to the SiC phase can lead to the realization of dilute magnetic semiconductor behavior at very low temperature. Silicon carbide nanowires (dpeaa)DE-He213 Doping (dpeaa)DE-He213 Diluted magnetic semiconductor (dpeaa)DE-He213 Park, Tae-Eon verfasserin aut Lee, Seung-Cheol verfasserin aut Lee, Kwang-Ryeol verfasserin aut Park, Jae-Kwan verfasserin aut Choi, Heon-Jin verfasserin aut Enthalten in Metals and materials international Sŏul : Inst., 1995 15(2009), 1 vom: Feb., Seite 107-111 (DE-627)60059405X (DE-600)2496162-0 2005-4149 nnns volume:15 year:2009 number:1 month:02 pages:107-111 https://dx.doi.org/10.1007/s12540-009-0107-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 15 2009 1 02 107-111 |
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10.1007/s12540-009-0107-7 doi (DE-627)SPR026063336 (SPR)s12540-009-0107-7-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Seong, Han-Kyu verfasserin aut Magnetic properties of vanadium-doped silicon carbide nanowires 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This study reports the magnetic properties of vanadium (V) doped single crystalline silicon carbide nanowires. The first principle calculation indicated that the V-doped cubic SiC phase can exhibit half-metallic ferromagnetic properties that are essential for the realization of spintronic devices. Based on this calculation, V-doped SiC nanowires were fabricated in a chemical vapor deposition process. The single crystalline β-SiC nanowires, which are doped with ca. 4 at.% of V, had diameters of < 100 nm and a length of several µm. High-resolution transmission electron microscopy observations revealed vanadium carbide (VC) phases in the nanowires, even at this low concentration of dopants. Magnetic characterization implies that the nanowires are a mixture of the diamagnetic phase of VC and ferro- or paramagnetic phases of V-doped SiC. These results suggest that the doping of transition metal having high solubility to the SiC phase can lead to the realization of dilute magnetic semiconductor behavior at very low temperature. Silicon carbide nanowires (dpeaa)DE-He213 Doping (dpeaa)DE-He213 Diluted magnetic semiconductor (dpeaa)DE-He213 Park, Tae-Eon verfasserin aut Lee, Seung-Cheol verfasserin aut Lee, Kwang-Ryeol verfasserin aut Park, Jae-Kwan verfasserin aut Choi, Heon-Jin verfasserin aut Enthalten in Metals and materials international Sŏul : Inst., 1995 15(2009), 1 vom: Feb., Seite 107-111 (DE-627)60059405X (DE-600)2496162-0 2005-4149 nnns volume:15 year:2009 number:1 month:02 pages:107-111 https://dx.doi.org/10.1007/s12540-009-0107-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 15 2009 1 02 107-111 |
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English |
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Enthalten in Metals and materials international 15(2009), 1 vom: Feb., Seite 107-111 volume:15 year:2009 number:1 month:02 pages:107-111 |
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Enthalten in Metals and materials international 15(2009), 1 vom: Feb., Seite 107-111 volume:15 year:2009 number:1 month:02 pages:107-111 |
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Silicon carbide nanowires Doping Diluted magnetic semiconductor |
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Metals and materials international |
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Seong, Han-Kyu @@aut@@ Park, Tae-Eon @@aut@@ Lee, Seung-Cheol @@aut@@ Lee, Kwang-Ryeol @@aut@@ Park, Jae-Kwan @@aut@@ Choi, Heon-Jin @@aut@@ |
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2009-02-01T00:00:00Z |
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Seong, Han-Kyu |
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Magnetic properties of vanadium-doped silicon carbide nanowires |
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magnetic properties of vanadium-doped silicon carbide nanowires |
| title_auth |
Magnetic properties of vanadium-doped silicon carbide nanowires |
| abstract |
Abstract This study reports the magnetic properties of vanadium (V) doped single crystalline silicon carbide nanowires. The first principle calculation indicated that the V-doped cubic SiC phase can exhibit half-metallic ferromagnetic properties that are essential for the realization of spintronic devices. Based on this calculation, V-doped SiC nanowires were fabricated in a chemical vapor deposition process. The single crystalline β-SiC nanowires, which are doped with ca. 4 at.% of V, had diameters of < 100 nm and a length of several µm. High-resolution transmission electron microscopy observations revealed vanadium carbide (VC) phases in the nanowires, even at this low concentration of dopants. Magnetic characterization implies that the nanowires are a mixture of the diamagnetic phase of VC and ferro- or paramagnetic phases of V-doped SiC. These results suggest that the doping of transition metal having high solubility to the SiC phase can lead to the realization of dilute magnetic semiconductor behavior at very low temperature. |
| abstractGer |
Abstract This study reports the magnetic properties of vanadium (V) doped single crystalline silicon carbide nanowires. The first principle calculation indicated that the V-doped cubic SiC phase can exhibit half-metallic ferromagnetic properties that are essential for the realization of spintronic devices. Based on this calculation, V-doped SiC nanowires were fabricated in a chemical vapor deposition process. The single crystalline β-SiC nanowires, which are doped with ca. 4 at.% of V, had diameters of < 100 nm and a length of several µm. High-resolution transmission electron microscopy observations revealed vanadium carbide (VC) phases in the nanowires, even at this low concentration of dopants. Magnetic characterization implies that the nanowires are a mixture of the diamagnetic phase of VC and ferro- or paramagnetic phases of V-doped SiC. These results suggest that the doping of transition metal having high solubility to the SiC phase can lead to the realization of dilute magnetic semiconductor behavior at very low temperature. |
| abstract_unstemmed |
Abstract This study reports the magnetic properties of vanadium (V) doped single crystalline silicon carbide nanowires. The first principle calculation indicated that the V-doped cubic SiC phase can exhibit half-metallic ferromagnetic properties that are essential for the realization of spintronic devices. Based on this calculation, V-doped SiC nanowires were fabricated in a chemical vapor deposition process. The single crystalline β-SiC nanowires, which are doped with ca. 4 at.% of V, had diameters of < 100 nm and a length of several µm. High-resolution transmission electron microscopy observations revealed vanadium carbide (VC) phases in the nanowires, even at this low concentration of dopants. Magnetic characterization implies that the nanowires are a mixture of the diamagnetic phase of VC and ferro- or paramagnetic phases of V-doped SiC. These results suggest that the doping of transition metal having high solubility to the SiC phase can lead to the realization of dilute magnetic semiconductor behavior at very low temperature. |
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Magnetic properties of vanadium-doped silicon carbide nanowires |
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https://dx.doi.org/10.1007/s12540-009-0107-7 |
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Park, Tae-Eon Lee, Seung-Cheol Lee, Kwang-Ryeol Park, Jae-Kwan Choi, Heon-Jin |
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Park, Tae-Eon Lee, Seung-Cheol Lee, Kwang-Ryeol Park, Jae-Kwan Choi, Heon-Jin |
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| doi_str |
10.1007/s12540-009-0107-7 |
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2024-07-03T18:39:55.862Z |
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| score |
7.4021015 |