Seed step-coverage enhancement process for a high-aspect-ratio through-silicon via using a pyrophosphate solution
Abstract A seed step-coverage enhancement process (SSEP) was investigated in order to improve the poor stepcoverage of the Cu seed layer when it is deposited by physical vapor deposition with a high-aspect-ratio through-silicon via (TSV) to inhibit void generation during a subsequent electroplating...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Jin, SangHoon [verfasserIn] Lee, DongRyul [verfasserIn] Lee, Woon Young [verfasserIn] Lee, SangYul [verfasserIn] Lee, Min Hyung [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Metals and materials international - Sŏul : Inst., 1995, 21(2015), 4 vom: 18. Juni, Seite 775-779 |
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| Übergeordnetes Werk: |
volume:21 ; year:2015 ; number:4 ; day:18 ; month:06 ; pages:775-779 |
| Links: |
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| DOI / URN: |
10.1007/s12540-015-4546-z |
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| Katalog-ID: |
SPR026074826 |
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| 100 | 1 | |a Jin, SangHoon |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Seed step-coverage enhancement process for a high-aspect-ratio through-silicon via using a pyrophosphate solution |
| 264 | 1 | |c 2015 | |
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| 520 | |a Abstract A seed step-coverage enhancement process (SSEP) was investigated in order to improve the poor stepcoverage of the Cu seed layer when it is deposited by physical vapor deposition with a high-aspect-ratio through-silicon via (TSV) to inhibit void generation during a subsequent electroplating TSV gap-fill process. The SSEP was performed by means of electroplating after the deposition of the Cu seed layer in TSV using an alkaline pyrophosphate solution, which is effective when used to prevent the dissolution of the Cu seed layer. The molar ratio of pyrophosphate ions to Cu ions in the plating solution and the current density were optimized for the SSEP by considering the surface uniformity of the electroplated Cu film through electroplating on the defective seed layer. In order to improve the wettability of the pyrophosphate solution in the TSV pattern, polyethylene glycol p-(1,1,3,3-tetramethylbutyl)-phenyl ether was added to the solution. Finally, we significantly strengthened the seed step-coverage at the bottom-corner of the TSV, the weakest point in terms of seed step-coverage, and achieved a void-free filling of the TSV in the subsequent TSV gap-fill process. | ||
| 650 | 4 | |a semiconductors |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a plating |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a wetting |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a electrochemistry |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a scanning electron microscopy (SEM) |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Lee, DongRyul |e verfasserin |4 aut | |
| 700 | 1 | |a Lee, Woon Young |e verfasserin |4 aut | |
| 700 | 1 | |a Lee, SangYul |e verfasserin |4 aut | |
| 700 | 1 | |a Lee, Min Hyung |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Metals and materials international |d Sŏul : Inst., 1995 |g 21(2015), 4 vom: 18. Juni, Seite 775-779 |w (DE-627)60059405X |w (DE-600)2496162-0 |x 2005-4149 |7 nnns |
| 773 | 1 | 8 | |g volume:21 |g year:2015 |g number:4 |g day:18 |g month:06 |g pages:775-779 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1007/s12540-015-4546-z |z lizenzpflichtig |3 Volltext |
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10.1007/s12540-015-4546-z doi (DE-627)SPR026074826 (SPR)s12540-015-4546-z-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Jin, SangHoon verfasserin aut Seed step-coverage enhancement process for a high-aspect-ratio through-silicon via using a pyrophosphate solution 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A seed step-coverage enhancement process (SSEP) was investigated in order to improve the poor stepcoverage of the Cu seed layer when it is deposited by physical vapor deposition with a high-aspect-ratio through-silicon via (TSV) to inhibit void generation during a subsequent electroplating TSV gap-fill process. The SSEP was performed by means of electroplating after the deposition of the Cu seed layer in TSV using an alkaline pyrophosphate solution, which is effective when used to prevent the dissolution of the Cu seed layer. The molar ratio of pyrophosphate ions to Cu ions in the plating solution and the current density were optimized for the SSEP by considering the surface uniformity of the electroplated Cu film through electroplating on the defective seed layer. In order to improve the wettability of the pyrophosphate solution in the TSV pattern, polyethylene glycol p-(1,1,3,3-tetramethylbutyl)-phenyl ether was added to the solution. Finally, we significantly strengthened the seed step-coverage at the bottom-corner of the TSV, the weakest point in terms of seed step-coverage, and achieved a void-free filling of the TSV in the subsequent TSV gap-fill process. semiconductors (dpeaa)DE-He213 plating (dpeaa)DE-He213 wetting (dpeaa)DE-He213 electrochemistry (dpeaa)DE-He213 scanning electron microscopy (SEM) (dpeaa)DE-He213 Lee, DongRyul verfasserin aut Lee, Woon Young verfasserin aut Lee, SangYul verfasserin aut Lee, Min Hyung verfasserin aut Enthalten in Metals and materials international Sŏul : Inst., 1995 21(2015), 4 vom: 18. Juni, Seite 775-779 (DE-627)60059405X (DE-600)2496162-0 2005-4149 nnns volume:21 year:2015 number:4 day:18 month:06 pages:775-779 https://dx.doi.org/10.1007/s12540-015-4546-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 21 2015 4 18 06 775-779 |
| spelling |
10.1007/s12540-015-4546-z doi (DE-627)SPR026074826 (SPR)s12540-015-4546-z-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Jin, SangHoon verfasserin aut Seed step-coverage enhancement process for a high-aspect-ratio through-silicon via using a pyrophosphate solution 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A seed step-coverage enhancement process (SSEP) was investigated in order to improve the poor stepcoverage of the Cu seed layer when it is deposited by physical vapor deposition with a high-aspect-ratio through-silicon via (TSV) to inhibit void generation during a subsequent electroplating TSV gap-fill process. The SSEP was performed by means of electroplating after the deposition of the Cu seed layer in TSV using an alkaline pyrophosphate solution, which is effective when used to prevent the dissolution of the Cu seed layer. The molar ratio of pyrophosphate ions to Cu ions in the plating solution and the current density were optimized for the SSEP by considering the surface uniformity of the electroplated Cu film through electroplating on the defective seed layer. In order to improve the wettability of the pyrophosphate solution in the TSV pattern, polyethylene glycol p-(1,1,3,3-tetramethylbutyl)-phenyl ether was added to the solution. Finally, we significantly strengthened the seed step-coverage at the bottom-corner of the TSV, the weakest point in terms of seed step-coverage, and achieved a void-free filling of the TSV in the subsequent TSV gap-fill process. semiconductors (dpeaa)DE-He213 plating (dpeaa)DE-He213 wetting (dpeaa)DE-He213 electrochemistry (dpeaa)DE-He213 scanning electron microscopy (SEM) (dpeaa)DE-He213 Lee, DongRyul verfasserin aut Lee, Woon Young verfasserin aut Lee, SangYul verfasserin aut Lee, Min Hyung verfasserin aut Enthalten in Metals and materials international Sŏul : Inst., 1995 21(2015), 4 vom: 18. Juni, Seite 775-779 (DE-627)60059405X (DE-600)2496162-0 2005-4149 nnns volume:21 year:2015 number:4 day:18 month:06 pages:775-779 https://dx.doi.org/10.1007/s12540-015-4546-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 21 2015 4 18 06 775-779 |
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10.1007/s12540-015-4546-z doi (DE-627)SPR026074826 (SPR)s12540-015-4546-z-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Jin, SangHoon verfasserin aut Seed step-coverage enhancement process for a high-aspect-ratio through-silicon via using a pyrophosphate solution 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A seed step-coverage enhancement process (SSEP) was investigated in order to improve the poor stepcoverage of the Cu seed layer when it is deposited by physical vapor deposition with a high-aspect-ratio through-silicon via (TSV) to inhibit void generation during a subsequent electroplating TSV gap-fill process. The SSEP was performed by means of electroplating after the deposition of the Cu seed layer in TSV using an alkaline pyrophosphate solution, which is effective when used to prevent the dissolution of the Cu seed layer. The molar ratio of pyrophosphate ions to Cu ions in the plating solution and the current density were optimized for the SSEP by considering the surface uniformity of the electroplated Cu film through electroplating on the defective seed layer. In order to improve the wettability of the pyrophosphate solution in the TSV pattern, polyethylene glycol p-(1,1,3,3-tetramethylbutyl)-phenyl ether was added to the solution. Finally, we significantly strengthened the seed step-coverage at the bottom-corner of the TSV, the weakest point in terms of seed step-coverage, and achieved a void-free filling of the TSV in the subsequent TSV gap-fill process. semiconductors (dpeaa)DE-He213 plating (dpeaa)DE-He213 wetting (dpeaa)DE-He213 electrochemistry (dpeaa)DE-He213 scanning electron microscopy (SEM) (dpeaa)DE-He213 Lee, DongRyul verfasserin aut Lee, Woon Young verfasserin aut Lee, SangYul verfasserin aut Lee, Min Hyung verfasserin aut Enthalten in Metals and materials international Sŏul : Inst., 1995 21(2015), 4 vom: 18. Juni, Seite 775-779 (DE-627)60059405X (DE-600)2496162-0 2005-4149 nnns volume:21 year:2015 number:4 day:18 month:06 pages:775-779 https://dx.doi.org/10.1007/s12540-015-4546-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 21 2015 4 18 06 775-779 |
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10.1007/s12540-015-4546-z doi (DE-627)SPR026074826 (SPR)s12540-015-4546-z-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Jin, SangHoon verfasserin aut Seed step-coverage enhancement process for a high-aspect-ratio through-silicon via using a pyrophosphate solution 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A seed step-coverage enhancement process (SSEP) was investigated in order to improve the poor stepcoverage of the Cu seed layer when it is deposited by physical vapor deposition with a high-aspect-ratio through-silicon via (TSV) to inhibit void generation during a subsequent electroplating TSV gap-fill process. The SSEP was performed by means of electroplating after the deposition of the Cu seed layer in TSV using an alkaline pyrophosphate solution, which is effective when used to prevent the dissolution of the Cu seed layer. The molar ratio of pyrophosphate ions to Cu ions in the plating solution and the current density were optimized for the SSEP by considering the surface uniformity of the electroplated Cu film through electroplating on the defective seed layer. In order to improve the wettability of the pyrophosphate solution in the TSV pattern, polyethylene glycol p-(1,1,3,3-tetramethylbutyl)-phenyl ether was added to the solution. Finally, we significantly strengthened the seed step-coverage at the bottom-corner of the TSV, the weakest point in terms of seed step-coverage, and achieved a void-free filling of the TSV in the subsequent TSV gap-fill process. semiconductors (dpeaa)DE-He213 plating (dpeaa)DE-He213 wetting (dpeaa)DE-He213 electrochemistry (dpeaa)DE-He213 scanning electron microscopy (SEM) (dpeaa)DE-He213 Lee, DongRyul verfasserin aut Lee, Woon Young verfasserin aut Lee, SangYul verfasserin aut Lee, Min Hyung verfasserin aut Enthalten in Metals and materials international Sŏul : Inst., 1995 21(2015), 4 vom: 18. Juni, Seite 775-779 (DE-627)60059405X (DE-600)2496162-0 2005-4149 nnns volume:21 year:2015 number:4 day:18 month:06 pages:775-779 https://dx.doi.org/10.1007/s12540-015-4546-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 21 2015 4 18 06 775-779 |
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10.1007/s12540-015-4546-z doi (DE-627)SPR026074826 (SPR)s12540-015-4546-z-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Jin, SangHoon verfasserin aut Seed step-coverage enhancement process for a high-aspect-ratio through-silicon via using a pyrophosphate solution 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A seed step-coverage enhancement process (SSEP) was investigated in order to improve the poor stepcoverage of the Cu seed layer when it is deposited by physical vapor deposition with a high-aspect-ratio through-silicon via (TSV) to inhibit void generation during a subsequent electroplating TSV gap-fill process. The SSEP was performed by means of electroplating after the deposition of the Cu seed layer in TSV using an alkaline pyrophosphate solution, which is effective when used to prevent the dissolution of the Cu seed layer. The molar ratio of pyrophosphate ions to Cu ions in the plating solution and the current density were optimized for the SSEP by considering the surface uniformity of the electroplated Cu film through electroplating on the defective seed layer. In order to improve the wettability of the pyrophosphate solution in the TSV pattern, polyethylene glycol p-(1,1,3,3-tetramethylbutyl)-phenyl ether was added to the solution. Finally, we significantly strengthened the seed step-coverage at the bottom-corner of the TSV, the weakest point in terms of seed step-coverage, and achieved a void-free filling of the TSV in the subsequent TSV gap-fill process. semiconductors (dpeaa)DE-He213 plating (dpeaa)DE-He213 wetting (dpeaa)DE-He213 electrochemistry (dpeaa)DE-He213 scanning electron microscopy (SEM) (dpeaa)DE-He213 Lee, DongRyul verfasserin aut Lee, Woon Young verfasserin aut Lee, SangYul verfasserin aut Lee, Min Hyung verfasserin aut Enthalten in Metals and materials international Sŏul : Inst., 1995 21(2015), 4 vom: 18. Juni, Seite 775-779 (DE-627)60059405X (DE-600)2496162-0 2005-4149 nnns volume:21 year:2015 number:4 day:18 month:06 pages:775-779 https://dx.doi.org/10.1007/s12540-015-4546-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 21 2015 4 18 06 775-779 |
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Jin, SangHoon @@aut@@ Lee, DongRyul @@aut@@ Lee, Woon Young @@aut@@ Lee, SangYul @@aut@@ Lee, Min Hyung @@aut@@ |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR026074826</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230520003534.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201007s2015 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s12540-015-4546-z</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR026074826</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s12540-015-4546-z-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="a">660</subfield><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Jin, SangHoon</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Seed step-coverage enhancement process for a high-aspect-ratio through-silicon via using a pyrophosphate solution</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract A seed step-coverage enhancement process (SSEP) was investigated in order to improve the poor stepcoverage of the Cu seed layer when it is deposited by physical vapor deposition with a high-aspect-ratio through-silicon via (TSV) to inhibit void generation during a subsequent electroplating TSV gap-fill process. The SSEP was performed by means of electroplating after the deposition of the Cu seed layer in TSV using an alkaline pyrophosphate solution, which is effective when used to prevent the dissolution of the Cu seed layer. The molar ratio of pyrophosphate ions to Cu ions in the plating solution and the current density were optimized for the SSEP by considering the surface uniformity of the electroplated Cu film through electroplating on the defective seed layer. In order to improve the wettability of the pyrophosphate solution in the TSV pattern, polyethylene glycol p-(1,1,3,3-tetramethylbutyl)-phenyl ether was added to the solution. 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Jin, SangHoon |
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620 660 670 ASE Seed step-coverage enhancement process for a high-aspect-ratio through-silicon via using a pyrophosphate solution semiconductors (dpeaa)DE-He213 plating (dpeaa)DE-He213 wetting (dpeaa)DE-He213 electrochemistry (dpeaa)DE-He213 scanning electron microscopy (SEM) (dpeaa)DE-He213 |
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Seed step-coverage enhancement process for a high-aspect-ratio through-silicon via using a pyrophosphate solution |
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Seed step-coverage enhancement process for a high-aspect-ratio through-silicon via using a pyrophosphate solution |
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seed step-coverage enhancement process for a high-aspect-ratio through-silicon via using a pyrophosphate solution |
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Seed step-coverage enhancement process for a high-aspect-ratio through-silicon via using a pyrophosphate solution |
| abstract |
Abstract A seed step-coverage enhancement process (SSEP) was investigated in order to improve the poor stepcoverage of the Cu seed layer when it is deposited by physical vapor deposition with a high-aspect-ratio through-silicon via (TSV) to inhibit void generation during a subsequent electroplating TSV gap-fill process. The SSEP was performed by means of electroplating after the deposition of the Cu seed layer in TSV using an alkaline pyrophosphate solution, which is effective when used to prevent the dissolution of the Cu seed layer. The molar ratio of pyrophosphate ions to Cu ions in the plating solution and the current density were optimized for the SSEP by considering the surface uniformity of the electroplated Cu film through electroplating on the defective seed layer. In order to improve the wettability of the pyrophosphate solution in the TSV pattern, polyethylene glycol p-(1,1,3,3-tetramethylbutyl)-phenyl ether was added to the solution. Finally, we significantly strengthened the seed step-coverage at the bottom-corner of the TSV, the weakest point in terms of seed step-coverage, and achieved a void-free filling of the TSV in the subsequent TSV gap-fill process. |
| abstractGer |
Abstract A seed step-coverage enhancement process (SSEP) was investigated in order to improve the poor stepcoverage of the Cu seed layer when it is deposited by physical vapor deposition with a high-aspect-ratio through-silicon via (TSV) to inhibit void generation during a subsequent electroplating TSV gap-fill process. The SSEP was performed by means of electroplating after the deposition of the Cu seed layer in TSV using an alkaline pyrophosphate solution, which is effective when used to prevent the dissolution of the Cu seed layer. The molar ratio of pyrophosphate ions to Cu ions in the plating solution and the current density were optimized for the SSEP by considering the surface uniformity of the electroplated Cu film through electroplating on the defective seed layer. In order to improve the wettability of the pyrophosphate solution in the TSV pattern, polyethylene glycol p-(1,1,3,3-tetramethylbutyl)-phenyl ether was added to the solution. Finally, we significantly strengthened the seed step-coverage at the bottom-corner of the TSV, the weakest point in terms of seed step-coverage, and achieved a void-free filling of the TSV in the subsequent TSV gap-fill process. |
| abstract_unstemmed |
Abstract A seed step-coverage enhancement process (SSEP) was investigated in order to improve the poor stepcoverage of the Cu seed layer when it is deposited by physical vapor deposition with a high-aspect-ratio through-silicon via (TSV) to inhibit void generation during a subsequent electroplating TSV gap-fill process. The SSEP was performed by means of electroplating after the deposition of the Cu seed layer in TSV using an alkaline pyrophosphate solution, which is effective when used to prevent the dissolution of the Cu seed layer. The molar ratio of pyrophosphate ions to Cu ions in the plating solution and the current density were optimized for the SSEP by considering the surface uniformity of the electroplated Cu film through electroplating on the defective seed layer. In order to improve the wettability of the pyrophosphate solution in the TSV pattern, polyethylene glycol p-(1,1,3,3-tetramethylbutyl)-phenyl ether was added to the solution. Finally, we significantly strengthened the seed step-coverage at the bottom-corner of the TSV, the weakest point in terms of seed step-coverage, and achieved a void-free filling of the TSV in the subsequent TSV gap-fill process. |
| collection_details |
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| container_issue |
4 |
| title_short |
Seed step-coverage enhancement process for a high-aspect-ratio through-silicon via using a pyrophosphate solution |
| url |
https://dx.doi.org/10.1007/s12540-015-4546-z |
| remote_bool |
true |
| author2 |
Lee, DongRyul Lee, Woon Young Lee, SangYul Lee, Min Hyung |
| author2Str |
Lee, DongRyul Lee, Woon Young Lee, SangYul Lee, Min Hyung |
| ppnlink |
60059405X |
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| doi_str |
10.1007/s12540-015-4546-z |
| up_date |
2024-07-03T18:44:02.787Z |
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| score |
7.4001484 |