Investigation of durability of TSV interconnect by numerical thermal fatigue analysis

Abstract 3D packaging using through silicon via (TSV) technology is becoming important in IC packaging industry. However, increased number of interconnects and extreme miniaturization suggest that thermo-mechanical reliability and fatigue will aggravate. In traditional package, thermo-mechanical fat...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Choa, Sung-Hoon [verfasserIn] Song, Cha Gyu [verfasserIn] Lee, Haeng Soo [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2011

Schlagwörter:	Through silicon via Via filling material Thermal fatigue Durability

Übergeordnetes Werk:	Enthalten in: International journal of precision engineering and manufacturing - Sŏul : KSPE, 2009, 12(2011), 4 vom: 01. Aug., Seite 589-596
Übergeordnetes Werk:	volume:12 ; year:2011 ; number:4 ; day:01 ; month:08 ; pages:589-596

Links:	Volltext

DOI / URN:	10.1007/s12541-011-0076-x

Katalog-ID:	SPR026085879

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520			\|a Abstract 3D packaging using through silicon via (TSV) technology is becoming important in IC packaging industry. However, increased number of interconnects and extreme miniaturization suggest that thermo-mechanical reliability and fatigue will aggravate. In traditional package, thermo-mechanical fatigue failure mostly occurs as a result of damage in the solder joint. In TSV technology, however, the driving failure may be the TSV via or TSV interconnects. In this study, the durability of TSV technology is investigated using finite element method. Thermal fatigue phenomenon due to the plastic strain caused by repetitive temperature cycling is analyzed, and possible failure locations are discussed. In particular, the effects of via size, underfill material, and via filling material on the thermal fatigue reliability are investigated. The expected fatigue life indicates that the presence of underfill material is essential in improving the durability of the TSV structure. The plastic strain increases with the via size increases, therefore the thermal fatigue life increases as the via size decreases. For different via filling materials such as copper, nickel and tungsten, amount of plastic strain is very similar, suggesting that nickel could be used for via filling material. However, the locations of the maximum strain are different for each filling material.
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matchkey_str	article:20054602:2011----::netgtoodrbltotvnecnetyueiat
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allfields	10.1007/s12541-011-0076-x doi (DE-627)SPR026085879 (SPR)s12541-011-0076-x-e DE-627 ger DE-627 rakwb eng 600 ASE Choa, Sung-Hoon verfasserin aut Investigation of durability of TSV interconnect by numerical thermal fatigue analysis 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract 3D packaging using through silicon via (TSV) technology is becoming important in IC packaging industry. However, increased number of interconnects and extreme miniaturization suggest that thermo-mechanical reliability and fatigue will aggravate. In traditional package, thermo-mechanical fatigue failure mostly occurs as a result of damage in the solder joint. In TSV technology, however, the driving failure may be the TSV via or TSV interconnects. In this study, the durability of TSV technology is investigated using finite element method. Thermal fatigue phenomenon due to the plastic strain caused by repetitive temperature cycling is analyzed, and possible failure locations are discussed. In particular, the effects of via size, underfill material, and via filling material on the thermal fatigue reliability are investigated. The expected fatigue life indicates that the presence of underfill material is essential in improving the durability of the TSV structure. The plastic strain increases with the via size increases, therefore the thermal fatigue life increases as the via size decreases. For different via filling materials such as copper, nickel and tungsten, amount of plastic strain is very similar, suggesting that nickel could be used for via filling material. However, the locations of the maximum strain are different for each filling material. Through silicon via (dpeaa)DE-He213 Via filling material (dpeaa)DE-He213 Thermal fatigue (dpeaa)DE-He213 Durability (dpeaa)DE-He213 Song, Cha Gyu verfasserin aut Lee, Haeng Soo verfasserin aut Enthalten in International journal of precision engineering and manufacturing Sŏul : KSPE, 2009 12(2011), 4 vom: 01. Aug., Seite 589-596 (DE-627)609403109 (DE-600)2515436-9 2005-4602 nnns volume:12 year:2011 number:4 day:01 month:08 pages:589-596 https://dx.doi.org/10.1007/s12541-011-0076-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 12 2011 4 01 08 589-596
spelling	10.1007/s12541-011-0076-x doi (DE-627)SPR026085879 (SPR)s12541-011-0076-x-e DE-627 ger DE-627 rakwb eng 600 ASE Choa, Sung-Hoon verfasserin aut Investigation of durability of TSV interconnect by numerical thermal fatigue analysis 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract 3D packaging using through silicon via (TSV) technology is becoming important in IC packaging industry. However, increased number of interconnects and extreme miniaturization suggest that thermo-mechanical reliability and fatigue will aggravate. In traditional package, thermo-mechanical fatigue failure mostly occurs as a result of damage in the solder joint. In TSV technology, however, the driving failure may be the TSV via or TSV interconnects. In this study, the durability of TSV technology is investigated using finite element method. Thermal fatigue phenomenon due to the plastic strain caused by repetitive temperature cycling is analyzed, and possible failure locations are discussed. In particular, the effects of via size, underfill material, and via filling material on the thermal fatigue reliability are investigated. The expected fatigue life indicates that the presence of underfill material is essential in improving the durability of the TSV structure. The plastic strain increases with the via size increases, therefore the thermal fatigue life increases as the via size decreases. For different via filling materials such as copper, nickel and tungsten, amount of plastic strain is very similar, suggesting that nickel could be used for via filling material. However, the locations of the maximum strain are different for each filling material. Through silicon via (dpeaa)DE-He213 Via filling material (dpeaa)DE-He213 Thermal fatigue (dpeaa)DE-He213 Durability (dpeaa)DE-He213 Song, Cha Gyu verfasserin aut Lee, Haeng Soo verfasserin aut Enthalten in International journal of precision engineering and manufacturing Sŏul : KSPE, 2009 12(2011), 4 vom: 01. Aug., Seite 589-596 (DE-627)609403109 (DE-600)2515436-9 2005-4602 nnns volume:12 year:2011 number:4 day:01 month:08 pages:589-596 https://dx.doi.org/10.1007/s12541-011-0076-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 12 2011 4 01 08 589-596
allfields_unstemmed	10.1007/s12541-011-0076-x doi (DE-627)SPR026085879 (SPR)s12541-011-0076-x-e DE-627 ger DE-627 rakwb eng 600 ASE Choa, Sung-Hoon verfasserin aut Investigation of durability of TSV interconnect by numerical thermal fatigue analysis 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract 3D packaging using through silicon via (TSV) technology is becoming important in IC packaging industry. However, increased number of interconnects and extreme miniaturization suggest that thermo-mechanical reliability and fatigue will aggravate. In traditional package, thermo-mechanical fatigue failure mostly occurs as a result of damage in the solder joint. In TSV technology, however, the driving failure may be the TSV via or TSV interconnects. In this study, the durability of TSV technology is investigated using finite element method. Thermal fatigue phenomenon due to the plastic strain caused by repetitive temperature cycling is analyzed, and possible failure locations are discussed. In particular, the effects of via size, underfill material, and via filling material on the thermal fatigue reliability are investigated. The expected fatigue life indicates that the presence of underfill material is essential in improving the durability of the TSV structure. The plastic strain increases with the via size increases, therefore the thermal fatigue life increases as the via size decreases. For different via filling materials such as copper, nickel and tungsten, amount of plastic strain is very similar, suggesting that nickel could be used for via filling material. However, the locations of the maximum strain are different for each filling material. Through silicon via (dpeaa)DE-He213 Via filling material (dpeaa)DE-He213 Thermal fatigue (dpeaa)DE-He213 Durability (dpeaa)DE-He213 Song, Cha Gyu verfasserin aut Lee, Haeng Soo verfasserin aut Enthalten in International journal of precision engineering and manufacturing Sŏul : KSPE, 2009 12(2011), 4 vom: 01. Aug., Seite 589-596 (DE-627)609403109 (DE-600)2515436-9 2005-4602 nnns volume:12 year:2011 number:4 day:01 month:08 pages:589-596 https://dx.doi.org/10.1007/s12541-011-0076-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 12 2011 4 01 08 589-596
allfieldsGer	10.1007/s12541-011-0076-x doi (DE-627)SPR026085879 (SPR)s12541-011-0076-x-e DE-627 ger DE-627 rakwb eng 600 ASE Choa, Sung-Hoon verfasserin aut Investigation of durability of TSV interconnect by numerical thermal fatigue analysis 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract 3D packaging using through silicon via (TSV) technology is becoming important in IC packaging industry. However, increased number of interconnects and extreme miniaturization suggest that thermo-mechanical reliability and fatigue will aggravate. In traditional package, thermo-mechanical fatigue failure mostly occurs as a result of damage in the solder joint. In TSV technology, however, the driving failure may be the TSV via or TSV interconnects. In this study, the durability of TSV technology is investigated using finite element method. Thermal fatigue phenomenon due to the plastic strain caused by repetitive temperature cycling is analyzed, and possible failure locations are discussed. In particular, the effects of via size, underfill material, and via filling material on the thermal fatigue reliability are investigated. The expected fatigue life indicates that the presence of underfill material is essential in improving the durability of the TSV structure. The plastic strain increases with the via size increases, therefore the thermal fatigue life increases as the via size decreases. For different via filling materials such as copper, nickel and tungsten, amount of plastic strain is very similar, suggesting that nickel could be used for via filling material. However, the locations of the maximum strain are different for each filling material. Through silicon via (dpeaa)DE-He213 Via filling material (dpeaa)DE-He213 Thermal fatigue (dpeaa)DE-He213 Durability (dpeaa)DE-He213 Song, Cha Gyu verfasserin aut Lee, Haeng Soo verfasserin aut Enthalten in International journal of precision engineering and manufacturing Sŏul : KSPE, 2009 12(2011), 4 vom: 01. Aug., Seite 589-596 (DE-627)609403109 (DE-600)2515436-9 2005-4602 nnns volume:12 year:2011 number:4 day:01 month:08 pages:589-596 https://dx.doi.org/10.1007/s12541-011-0076-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 12 2011 4 01 08 589-596
allfieldsSound	10.1007/s12541-011-0076-x doi (DE-627)SPR026085879 (SPR)s12541-011-0076-x-e DE-627 ger DE-627 rakwb eng 600 ASE Choa, Sung-Hoon verfasserin aut Investigation of durability of TSV interconnect by numerical thermal fatigue analysis 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract 3D packaging using through silicon via (TSV) technology is becoming important in IC packaging industry. However, increased number of interconnects and extreme miniaturization suggest that thermo-mechanical reliability and fatigue will aggravate. In traditional package, thermo-mechanical fatigue failure mostly occurs as a result of damage in the solder joint. In TSV technology, however, the driving failure may be the TSV via or TSV interconnects. In this study, the durability of TSV technology is investigated using finite element method. Thermal fatigue phenomenon due to the plastic strain caused by repetitive temperature cycling is analyzed, and possible failure locations are discussed. In particular, the effects of via size, underfill material, and via filling material on the thermal fatigue reliability are investigated. The expected fatigue life indicates that the presence of underfill material is essential in improving the durability of the TSV structure. The plastic strain increases with the via size increases, therefore the thermal fatigue life increases as the via size decreases. For different via filling materials such as copper, nickel and tungsten, amount of plastic strain is very similar, suggesting that nickel could be used for via filling material. However, the locations of the maximum strain are different for each filling material. Through silicon via (dpeaa)DE-He213 Via filling material (dpeaa)DE-He213 Thermal fatigue (dpeaa)DE-He213 Durability (dpeaa)DE-He213 Song, Cha Gyu verfasserin aut Lee, Haeng Soo verfasserin aut Enthalten in International journal of precision engineering and manufacturing Sŏul : KSPE, 2009 12(2011), 4 vom: 01. Aug., Seite 589-596 (DE-627)609403109 (DE-600)2515436-9 2005-4602 nnns volume:12 year:2011 number:4 day:01 month:08 pages:589-596 https://dx.doi.org/10.1007/s12541-011-0076-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 12 2011 4 01 08 589-596
language	English
source	Enthalten in International journal of precision engineering and manufacturing 12(2011), 4 vom: 01. Aug., Seite 589-596 volume:12 year:2011 number:4 day:01 month:08 pages:589-596
sourceStr	Enthalten in International journal of precision engineering and manufacturing 12(2011), 4 vom: 01. Aug., Seite 589-596 volume:12 year:2011 number:4 day:01 month:08 pages:589-596
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Through silicon via Via filling material Thermal fatigue Durability
dewey-raw	600
isfreeaccess_bool	false
container_title	International journal of precision engineering and manufacturing
authorswithroles_txt_mv	Choa, Sung-Hoon @@aut@@ Song, Cha Gyu @@aut@@ Lee, Haeng Soo @@aut@@
publishDateDaySort_date	2011-08-01T00:00:00Z
hierarchy_top_id	609403109
dewey-sort	3600
id	SPR026085879
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR026085879</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220111133309.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201007s2011 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s12541-011-0076-x</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR026085879</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s12541-011-0076-x-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Choa, Sung-Hoon</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Investigation of durability of TSV interconnect by numerical thermal fatigue analysis</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2011</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract 3D packaging using through silicon via (TSV) technology is becoming important in IC packaging industry. 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author	Choa, Sung-Hoon
spellingShingle	Choa, Sung-Hoon ddc 600 misc Through silicon via misc Via filling material misc Thermal fatigue misc Durability Investigation of durability of TSV interconnect by numerical thermal fatigue analysis
authorStr	Choa, Sung-Hoon
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topic_title	600 ASE Investigation of durability of TSV interconnect by numerical thermal fatigue analysis Through silicon via (dpeaa)DE-He213 Via filling material (dpeaa)DE-He213 Thermal fatigue (dpeaa)DE-He213 Durability (dpeaa)DE-He213
topic	ddc 600 misc Through silicon via misc Via filling material misc Thermal fatigue misc Durability
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title	Investigation of durability of TSV interconnect by numerical thermal fatigue analysis
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title_full	Investigation of durability of TSV interconnect by numerical thermal fatigue analysis
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author_browse	Choa, Sung-Hoon Song, Cha Gyu Lee, Haeng Soo
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author-letter	Choa, Sung-Hoon
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title_sort	investigation of durability of tsv interconnect by numerical thermal fatigue analysis
title_auth	Investigation of durability of TSV interconnect by numerical thermal fatigue analysis
abstract	Abstract 3D packaging using through silicon via (TSV) technology is becoming important in IC packaging industry. However, increased number of interconnects and extreme miniaturization suggest that thermo-mechanical reliability and fatigue will aggravate. In traditional package, thermo-mechanical fatigue failure mostly occurs as a result of damage in the solder joint. In TSV technology, however, the driving failure may be the TSV via or TSV interconnects. In this study, the durability of TSV technology is investigated using finite element method. Thermal fatigue phenomenon due to the plastic strain caused by repetitive temperature cycling is analyzed, and possible failure locations are discussed. In particular, the effects of via size, underfill material, and via filling material on the thermal fatigue reliability are investigated. The expected fatigue life indicates that the presence of underfill material is essential in improving the durability of the TSV structure. The plastic strain increases with the via size increases, therefore the thermal fatigue life increases as the via size decreases. For different via filling materials such as copper, nickel and tungsten, amount of plastic strain is very similar, suggesting that nickel could be used for via filling material. However, the locations of the maximum strain are different for each filling material.
abstractGer	Abstract 3D packaging using through silicon via (TSV) technology is becoming important in IC packaging industry. However, increased number of interconnects and extreme miniaturization suggest that thermo-mechanical reliability and fatigue will aggravate. In traditional package, thermo-mechanical fatigue failure mostly occurs as a result of damage in the solder joint. In TSV technology, however, the driving failure may be the TSV via or TSV interconnects. In this study, the durability of TSV technology is investigated using finite element method. Thermal fatigue phenomenon due to the plastic strain caused by repetitive temperature cycling is analyzed, and possible failure locations are discussed. In particular, the effects of via size, underfill material, and via filling material on the thermal fatigue reliability are investigated. The expected fatigue life indicates that the presence of underfill material is essential in improving the durability of the TSV structure. The plastic strain increases with the via size increases, therefore the thermal fatigue life increases as the via size decreases. For different via filling materials such as copper, nickel and tungsten, amount of plastic strain is very similar, suggesting that nickel could be used for via filling material. However, the locations of the maximum strain are different for each filling material.
abstract_unstemmed	Abstract 3D packaging using through silicon via (TSV) technology is becoming important in IC packaging industry. However, increased number of interconnects and extreme miniaturization suggest that thermo-mechanical reliability and fatigue will aggravate. In traditional package, thermo-mechanical fatigue failure mostly occurs as a result of damage in the solder joint. In TSV technology, however, the driving failure may be the TSV via or TSV interconnects. In this study, the durability of TSV technology is investigated using finite element method. Thermal fatigue phenomenon due to the plastic strain caused by repetitive temperature cycling is analyzed, and possible failure locations are discussed. In particular, the effects of via size, underfill material, and via filling material on the thermal fatigue reliability are investigated. The expected fatigue life indicates that the presence of underfill material is essential in improving the durability of the TSV structure. The plastic strain increases with the via size increases, therefore the thermal fatigue life increases as the via size decreases. For different via filling materials such as copper, nickel and tungsten, amount of plastic strain is very similar, suggesting that nickel could be used for via filling material. However, the locations of the maximum strain are different for each filling material.
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container_issue	4
title_short	Investigation of durability of TSV interconnect by numerical thermal fatigue analysis
url	https://dx.doi.org/10.1007/s12541-011-0076-x
remote_bool	true
author2	Song, Cha Gyu Lee, Haeng Soo
author2Str	Song, Cha Gyu Lee, Haeng Soo
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doi_str	10.1007/s12541-011-0076-x
up_date	2024-07-03T18:48:02.372Z
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However, increased number of interconnects and extreme miniaturization suggest that thermo-mechanical reliability and fatigue will aggravate. In traditional package, thermo-mechanical fatigue failure mostly occurs as a result of damage in the solder joint. In TSV technology, however, the driving failure may be the TSV via or TSV interconnects. In this study, the durability of TSV technology is investigated using finite element method. Thermal fatigue phenomenon due to the plastic strain caused by repetitive temperature cycling is analyzed, and possible failure locations are discussed. In particular, the effects of via size, underfill material, and via filling material on the thermal fatigue reliability are investigated. The expected fatigue life indicates that the presence of underfill material is essential in improving the durability of the TSV structure. The plastic strain increases with the via size increases, therefore the thermal fatigue life increases as the via size decreases. 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Investigation of durability of TSV interconnect by numerical thermal fatigue analysis

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