Epitaxial growth of MOCVD-derived YBCO films by modulation of Cu(tmhd)2 concentration
Abstract Metal–organic chemical vapor deposition was applied to fabricate $ YBa_{2} %$ Cu_{3} %$ O_{7−δ} $ (YBCO) films on single-crystal $ LaAlO_{3} $ (001) substrates for its high deposition rate, easy adjustment on film composition, and low requirement on vacuum apparatus. The effects of Cu(tmhd)...
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Gespeichert in:
| Autor*in: |
Xiong, Jie [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2013 |
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| Schlagwörter: |
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| Anmerkung: |
© The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2013 |
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| Übergeordnetes Werk: |
Enthalten in: Rare metals - Beijing : Yejin Gongye Chubanshe, 1989, 33(2013), 1 vom: 05. Dez., Seite 70-74 |
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| Übergeordnetes Werk: |
volume:33 ; year:2013 ; number:1 ; day:05 ; month:12 ; pages:70-74 |
| Links: |
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| DOI / URN: |
10.1007/s12598-013-0166-2 |
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SPR026252295 |
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| 245 | 1 | 0 | |a Epitaxial growth of MOCVD-derived YBCO films by modulation of Cu(tmhd)2 concentration |
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| 520 | |a Abstract Metal–organic chemical vapor deposition was applied to fabricate $ YBa_{2} %$ Cu_{3} %$ O_{7−δ} $ (YBCO) films on single-crystal $ LaAlO_{3} $ (001) substrates for its high deposition rate, easy adjustment on film composition, and low requirement on vacuum apparatus. The effects of Cu(tmhd)2 concentration in the precursor on the properties of YBCO films were systematically investigated. X-ray diffraction (XRD) reveals that the mole ratio of Cu/Ba in the precursor from 0.77 to 0.97 is helpful to improve the crystallization and out-of-plane orientation of YBCO films; however, it hardly affects the in-plane texture. Scanning electron microscope (SEM) shows the dense, crack-free but rough surface, on which there are Cu–O and Ba–Cu–O outgrowths identified by energy-dispersive spectrometer (EDS). As the mole ratio of Cu/Ba increasing, the average size of Ba–Cu–O precipitates keeps increasing and the film composition becomes inhomogeneous at the mole ratio of Cu/Ba of 0.97. The 250 nm thick YBCO film prepared at the mole ratio of Cu/Ba of 0.91 shows the critical current density (Jc) of 4.0 MA·$ cm^{−2} $ (77 K, 0 T). | ||
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| 650 | 4 | |a concentration |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Cu/Ba ratio |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Zhang, Fei |4 aut | |
| 700 | 1 | |a Liu, Xin |4 aut | |
| 700 | 1 | |a Zhao, Rui-Peng |4 aut | |
| 700 | 1 | |a Zhao, Xiao-Hui |4 aut | |
| 700 | 1 | |a Tao, Bo-Wan |4 aut | |
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10.1007/s12598-013-0166-2 doi (DE-627)SPR026252295 (SPR)s12598-013-0166-2-e DE-627 ger DE-627 rakwb eng Xiong, Jie verfasserin aut Epitaxial growth of MOCVD-derived YBCO films by modulation of Cu(tmhd)2 concentration 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2013 Abstract Metal–organic chemical vapor deposition was applied to fabricate $ YBa_{2} %$ Cu_{3} %$ O_{7−δ} $ (YBCO) films on single-crystal $ LaAlO_{3} $ (001) substrates for its high deposition rate, easy adjustment on film composition, and low requirement on vacuum apparatus. The effects of Cu(tmhd)2 concentration in the precursor on the properties of YBCO films were systematically investigated. X-ray diffraction (XRD) reveals that the mole ratio of Cu/Ba in the precursor from 0.77 to 0.97 is helpful to improve the crystallization and out-of-plane orientation of YBCO films; however, it hardly affects the in-plane texture. Scanning electron microscope (SEM) shows the dense, crack-free but rough surface, on which there are Cu–O and Ba–Cu–O outgrowths identified by energy-dispersive spectrometer (EDS). As the mole ratio of Cu/Ba increasing, the average size of Ba–Cu–O precipitates keeps increasing and the film composition becomes inhomogeneous at the mole ratio of Cu/Ba of 0.97. The 250 nm thick YBCO film prepared at the mole ratio of Cu/Ba of 0.91 shows the critical current density (Jc) of 4.0 MA·$ cm^{−2} $ (77 K, 0 T). MOCVD (dpeaa)DE-He213 YBCO (dpeaa)DE-He213 Cu(tmhd) (dpeaa)DE-He213 concentration (dpeaa)DE-He213 Cu/Ba ratio (dpeaa)DE-He213 Zhang, Fei aut Liu, Xin aut Zhao, Rui-Peng aut Zhao, Xiao-Hui aut Tao, Bo-Wan aut Enthalten in Rare metals Beijing : Yejin Gongye Chubanshe, 1989 33(2013), 1 vom: 05. Dez., Seite 70-74 (DE-627)513219307 (DE-600)2238702-X 1867-7185 nnns volume:33 year:2013 number:1 day:05 month:12 pages:70-74 https://dx.doi.org/10.1007/s12598-013-0166-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 33 2013 1 05 12 70-74 |
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10.1007/s12598-013-0166-2 doi (DE-627)SPR026252295 (SPR)s12598-013-0166-2-e DE-627 ger DE-627 rakwb eng Xiong, Jie verfasserin aut Epitaxial growth of MOCVD-derived YBCO films by modulation of Cu(tmhd)2 concentration 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2013 Abstract Metal–organic chemical vapor deposition was applied to fabricate $ YBa_{2} %$ Cu_{3} %$ O_{7−δ} $ (YBCO) films on single-crystal $ LaAlO_{3} $ (001) substrates for its high deposition rate, easy adjustment on film composition, and low requirement on vacuum apparatus. The effects of Cu(tmhd)2 concentration in the precursor on the properties of YBCO films were systematically investigated. X-ray diffraction (XRD) reveals that the mole ratio of Cu/Ba in the precursor from 0.77 to 0.97 is helpful to improve the crystallization and out-of-plane orientation of YBCO films; however, it hardly affects the in-plane texture. Scanning electron microscope (SEM) shows the dense, crack-free but rough surface, on which there are Cu–O and Ba–Cu–O outgrowths identified by energy-dispersive spectrometer (EDS). As the mole ratio of Cu/Ba increasing, the average size of Ba–Cu–O precipitates keeps increasing and the film composition becomes inhomogeneous at the mole ratio of Cu/Ba of 0.97. The 250 nm thick YBCO film prepared at the mole ratio of Cu/Ba of 0.91 shows the critical current density (Jc) of 4.0 MA·$ cm^{−2} $ (77 K, 0 T). MOCVD (dpeaa)DE-He213 YBCO (dpeaa)DE-He213 Cu(tmhd) (dpeaa)DE-He213 concentration (dpeaa)DE-He213 Cu/Ba ratio (dpeaa)DE-He213 Zhang, Fei aut Liu, Xin aut Zhao, Rui-Peng aut Zhao, Xiao-Hui aut Tao, Bo-Wan aut Enthalten in Rare metals Beijing : Yejin Gongye Chubanshe, 1989 33(2013), 1 vom: 05. Dez., Seite 70-74 (DE-627)513219307 (DE-600)2238702-X 1867-7185 nnns volume:33 year:2013 number:1 day:05 month:12 pages:70-74 https://dx.doi.org/10.1007/s12598-013-0166-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 33 2013 1 05 12 70-74 |
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10.1007/s12598-013-0166-2 doi (DE-627)SPR026252295 (SPR)s12598-013-0166-2-e DE-627 ger DE-627 rakwb eng Xiong, Jie verfasserin aut Epitaxial growth of MOCVD-derived YBCO films by modulation of Cu(tmhd)2 concentration 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2013 Abstract Metal–organic chemical vapor deposition was applied to fabricate $ YBa_{2} %$ Cu_{3} %$ O_{7−δ} $ (YBCO) films on single-crystal $ LaAlO_{3} $ (001) substrates for its high deposition rate, easy adjustment on film composition, and low requirement on vacuum apparatus. The effects of Cu(tmhd)2 concentration in the precursor on the properties of YBCO films were systematically investigated. X-ray diffraction (XRD) reveals that the mole ratio of Cu/Ba in the precursor from 0.77 to 0.97 is helpful to improve the crystallization and out-of-plane orientation of YBCO films; however, it hardly affects the in-plane texture. Scanning electron microscope (SEM) shows the dense, crack-free but rough surface, on which there are Cu–O and Ba–Cu–O outgrowths identified by energy-dispersive spectrometer (EDS). As the mole ratio of Cu/Ba increasing, the average size of Ba–Cu–O precipitates keeps increasing and the film composition becomes inhomogeneous at the mole ratio of Cu/Ba of 0.97. The 250 nm thick YBCO film prepared at the mole ratio of Cu/Ba of 0.91 shows the critical current density (Jc) of 4.0 MA·$ cm^{−2} $ (77 K, 0 T). MOCVD (dpeaa)DE-He213 YBCO (dpeaa)DE-He213 Cu(tmhd) (dpeaa)DE-He213 concentration (dpeaa)DE-He213 Cu/Ba ratio (dpeaa)DE-He213 Zhang, Fei aut Liu, Xin aut Zhao, Rui-Peng aut Zhao, Xiao-Hui aut Tao, Bo-Wan aut Enthalten in Rare metals Beijing : Yejin Gongye Chubanshe, 1989 33(2013), 1 vom: 05. Dez., Seite 70-74 (DE-627)513219307 (DE-600)2238702-X 1867-7185 nnns volume:33 year:2013 number:1 day:05 month:12 pages:70-74 https://dx.doi.org/10.1007/s12598-013-0166-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 33 2013 1 05 12 70-74 |
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10.1007/s12598-013-0166-2 doi (DE-627)SPR026252295 (SPR)s12598-013-0166-2-e DE-627 ger DE-627 rakwb eng Xiong, Jie verfasserin aut Epitaxial growth of MOCVD-derived YBCO films by modulation of Cu(tmhd)2 concentration 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2013 Abstract Metal–organic chemical vapor deposition was applied to fabricate $ YBa_{2} %$ Cu_{3} %$ O_{7−δ} $ (YBCO) films on single-crystal $ LaAlO_{3} $ (001) substrates for its high deposition rate, easy adjustment on film composition, and low requirement on vacuum apparatus. The effects of Cu(tmhd)2 concentration in the precursor on the properties of YBCO films were systematically investigated. X-ray diffraction (XRD) reveals that the mole ratio of Cu/Ba in the precursor from 0.77 to 0.97 is helpful to improve the crystallization and out-of-plane orientation of YBCO films; however, it hardly affects the in-plane texture. Scanning electron microscope (SEM) shows the dense, crack-free but rough surface, on which there are Cu–O and Ba–Cu–O outgrowths identified by energy-dispersive spectrometer (EDS). As the mole ratio of Cu/Ba increasing, the average size of Ba–Cu–O precipitates keeps increasing and the film composition becomes inhomogeneous at the mole ratio of Cu/Ba of 0.97. The 250 nm thick YBCO film prepared at the mole ratio of Cu/Ba of 0.91 shows the critical current density (Jc) of 4.0 MA·$ cm^{−2} $ (77 K, 0 T). MOCVD (dpeaa)DE-He213 YBCO (dpeaa)DE-He213 Cu(tmhd) (dpeaa)DE-He213 concentration (dpeaa)DE-He213 Cu/Ba ratio (dpeaa)DE-He213 Zhang, Fei aut Liu, Xin aut Zhao, Rui-Peng aut Zhao, Xiao-Hui aut Tao, Bo-Wan aut Enthalten in Rare metals Beijing : Yejin Gongye Chubanshe, 1989 33(2013), 1 vom: 05. Dez., Seite 70-74 (DE-627)513219307 (DE-600)2238702-X 1867-7185 nnns volume:33 year:2013 number:1 day:05 month:12 pages:70-74 https://dx.doi.org/10.1007/s12598-013-0166-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 33 2013 1 05 12 70-74 |
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10.1007/s12598-013-0166-2 doi (DE-627)SPR026252295 (SPR)s12598-013-0166-2-e DE-627 ger DE-627 rakwb eng Xiong, Jie verfasserin aut Epitaxial growth of MOCVD-derived YBCO films by modulation of Cu(tmhd)2 concentration 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2013 Abstract Metal–organic chemical vapor deposition was applied to fabricate $ YBa_{2} %$ Cu_{3} %$ O_{7−δ} $ (YBCO) films on single-crystal $ LaAlO_{3} $ (001) substrates for its high deposition rate, easy adjustment on film composition, and low requirement on vacuum apparatus. The effects of Cu(tmhd)2 concentration in the precursor on the properties of YBCO films were systematically investigated. X-ray diffraction (XRD) reveals that the mole ratio of Cu/Ba in the precursor from 0.77 to 0.97 is helpful to improve the crystallization and out-of-plane orientation of YBCO films; however, it hardly affects the in-plane texture. Scanning electron microscope (SEM) shows the dense, crack-free but rough surface, on which there are Cu–O and Ba–Cu–O outgrowths identified by energy-dispersive spectrometer (EDS). As the mole ratio of Cu/Ba increasing, the average size of Ba–Cu–O precipitates keeps increasing and the film composition becomes inhomogeneous at the mole ratio of Cu/Ba of 0.97. The 250 nm thick YBCO film prepared at the mole ratio of Cu/Ba of 0.91 shows the critical current density (Jc) of 4.0 MA·$ cm^{−2} $ (77 K, 0 T). MOCVD (dpeaa)DE-He213 YBCO (dpeaa)DE-He213 Cu(tmhd) (dpeaa)DE-He213 concentration (dpeaa)DE-He213 Cu/Ba ratio (dpeaa)DE-He213 Zhang, Fei aut Liu, Xin aut Zhao, Rui-Peng aut Zhao, Xiao-Hui aut Tao, Bo-Wan aut Enthalten in Rare metals Beijing : Yejin Gongye Chubanshe, 1989 33(2013), 1 vom: 05. Dez., Seite 70-74 (DE-627)513219307 (DE-600)2238702-X 1867-7185 nnns volume:33 year:2013 number:1 day:05 month:12 pages:70-74 https://dx.doi.org/10.1007/s12598-013-0166-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 33 2013 1 05 12 70-74 |
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Enthalten in Rare metals 33(2013), 1 vom: 05. Dez., Seite 70-74 volume:33 year:2013 number:1 day:05 month:12 pages:70-74 |
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Enthalten in Rare metals 33(2013), 1 vom: 05. Dez., Seite 70-74 volume:33 year:2013 number:1 day:05 month:12 pages:70-74 |
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Xiong, Jie @@aut@@ Zhang, Fei @@aut@@ Liu, Xin @@aut@@ Zhao, Rui-Peng @@aut@@ Zhao, Xiao-Hui @@aut@@ Tao, Bo-Wan @@aut@@ |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR026252295</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230331233028.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201007s2013 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s12598-013-0166-2</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR026252295</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s12598-013-0166-2-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Xiong, Jie</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Epitaxial growth of MOCVD-derived YBCO films by modulation of Cu(tmhd)2 concentration</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2013</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2013</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Metal–organic chemical vapor deposition was applied to fabricate $ YBa_{2} %$ Cu_{3} %$ O_{7−δ} $ (YBCO) films on single-crystal $ LaAlO_{3} $ (001) substrates for its high deposition rate, easy adjustment on film composition, and low requirement on vacuum apparatus. The effects of Cu(tmhd)2 concentration in the precursor on the properties of YBCO films were systematically investigated. X-ray diffraction (XRD) reveals that the mole ratio of Cu/Ba in the precursor from 0.77 to 0.97 is helpful to improve the crystallization and out-of-plane orientation of YBCO films; however, it hardly affects the in-plane texture. Scanning electron microscope (SEM) shows the dense, crack-free but rough surface, on which there are Cu–O and Ba–Cu–O outgrowths identified by energy-dispersive spectrometer (EDS). As the mole ratio of Cu/Ba increasing, the average size of Ba–Cu–O precipitates keeps increasing and the film composition becomes inhomogeneous at the mole ratio of Cu/Ba of 0.97. 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Xiong, Jie |
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Xiong, Jie misc MOCVD misc YBCO misc Cu(tmhd) misc concentration misc Cu/Ba ratio Epitaxial growth of MOCVD-derived YBCO films by modulation of Cu(tmhd)2 concentration |
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Epitaxial growth of MOCVD-derived YBCO films by modulation of Cu(tmhd)2 concentration MOCVD (dpeaa)DE-He213 YBCO (dpeaa)DE-He213 Cu(tmhd) (dpeaa)DE-He213 concentration (dpeaa)DE-He213 Cu/Ba ratio (dpeaa)DE-He213 |
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Xiong, Jie Zhang, Fei Liu, Xin Zhao, Rui-Peng Zhao, Xiao-Hui Tao, Bo-Wan |
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epitaxial growth of mocvd-derived ybco films by modulation of cu(tmhd)2 concentration |
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Epitaxial growth of MOCVD-derived YBCO films by modulation of Cu(tmhd)2 concentration |
| abstract |
Abstract Metal–organic chemical vapor deposition was applied to fabricate $ YBa_{2} %$ Cu_{3} %$ O_{7−δ} $ (YBCO) films on single-crystal $ LaAlO_{3} $ (001) substrates for its high deposition rate, easy adjustment on film composition, and low requirement on vacuum apparatus. The effects of Cu(tmhd)2 concentration in the precursor on the properties of YBCO films were systematically investigated. X-ray diffraction (XRD) reveals that the mole ratio of Cu/Ba in the precursor from 0.77 to 0.97 is helpful to improve the crystallization and out-of-plane orientation of YBCO films; however, it hardly affects the in-plane texture. Scanning electron microscope (SEM) shows the dense, crack-free but rough surface, on which there are Cu–O and Ba–Cu–O outgrowths identified by energy-dispersive spectrometer (EDS). As the mole ratio of Cu/Ba increasing, the average size of Ba–Cu–O precipitates keeps increasing and the film composition becomes inhomogeneous at the mole ratio of Cu/Ba of 0.97. The 250 nm thick YBCO film prepared at the mole ratio of Cu/Ba of 0.91 shows the critical current density (Jc) of 4.0 MA·$ cm^{−2} $ (77 K, 0 T). © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2013 |
| abstractGer |
Abstract Metal–organic chemical vapor deposition was applied to fabricate $ YBa_{2} %$ Cu_{3} %$ O_{7−δ} $ (YBCO) films on single-crystal $ LaAlO_{3} $ (001) substrates for its high deposition rate, easy adjustment on film composition, and low requirement on vacuum apparatus. The effects of Cu(tmhd)2 concentration in the precursor on the properties of YBCO films were systematically investigated. X-ray diffraction (XRD) reveals that the mole ratio of Cu/Ba in the precursor from 0.77 to 0.97 is helpful to improve the crystallization and out-of-plane orientation of YBCO films; however, it hardly affects the in-plane texture. Scanning electron microscope (SEM) shows the dense, crack-free but rough surface, on which there are Cu–O and Ba–Cu–O outgrowths identified by energy-dispersive spectrometer (EDS). As the mole ratio of Cu/Ba increasing, the average size of Ba–Cu–O precipitates keeps increasing and the film composition becomes inhomogeneous at the mole ratio of Cu/Ba of 0.97. The 250 nm thick YBCO film prepared at the mole ratio of Cu/Ba of 0.91 shows the critical current density (Jc) of 4.0 MA·$ cm^{−2} $ (77 K, 0 T). © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2013 |
| abstract_unstemmed |
Abstract Metal–organic chemical vapor deposition was applied to fabricate $ YBa_{2} %$ Cu_{3} %$ O_{7−δ} $ (YBCO) films on single-crystal $ LaAlO_{3} $ (001) substrates for its high deposition rate, easy adjustment on film composition, and low requirement on vacuum apparatus. The effects of Cu(tmhd)2 concentration in the precursor on the properties of YBCO films were systematically investigated. X-ray diffraction (XRD) reveals that the mole ratio of Cu/Ba in the precursor from 0.77 to 0.97 is helpful to improve the crystallization and out-of-plane orientation of YBCO films; however, it hardly affects the in-plane texture. Scanning electron microscope (SEM) shows the dense, crack-free but rough surface, on which there are Cu–O and Ba–Cu–O outgrowths identified by energy-dispersive spectrometer (EDS). As the mole ratio of Cu/Ba increasing, the average size of Ba–Cu–O precipitates keeps increasing and the film composition becomes inhomogeneous at the mole ratio of Cu/Ba of 0.97. The 250 nm thick YBCO film prepared at the mole ratio of Cu/Ba of 0.91 shows the critical current density (Jc) of 4.0 MA·$ cm^{−2} $ (77 K, 0 T). © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2013 |
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Epitaxial growth of MOCVD-derived YBCO films by modulation of Cu(tmhd)2 concentration |
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https://dx.doi.org/10.1007/s12598-013-0166-2 |
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Zhang, Fei Liu, Xin Zhao, Rui-Peng Zhao, Xiao-Hui Tao, Bo-Wan |
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| score |
7.400794 |