Dielectric thin films for GaN-based high-electron-mobility transistors
Abstract The effects of dielectric thin films on the performance of GaN-based high-electron-mobility transistors (HEMTs) were reviewed in this work. Firstly, the nonpolar dielectric thin films which act as both the surface passivation layers and the gate insulators of the high-frequency GaN-based hi...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Li, Yan-Rong [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Anmerkung: |
© The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2015 |
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| Übergeordnetes Werk: |
Enthalten in: Rare metals - Beijing : Yejin Gongye Chubanshe, 1989, 34(2015), 6 vom: 05. Feb., Seite 371-380 |
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| Übergeordnetes Werk: |
volume:34 ; year:2015 ; number:6 ; day:05 ; month:02 ; pages:371-380 |
| Links: |
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| DOI / URN: |
10.1007/s12598-015-0451-3 |
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SPR02625476X |
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| 520 | |a Abstract The effects of dielectric thin films on the performance of GaN-based high-electron-mobility transistors (HEMTs) were reviewed in this work. Firstly, the nonpolar dielectric thin films which act as both the surface passivation layers and the gate insulators of the high-frequency GaN-based high-electron-mobility transistors were presented. Furthermore, the influences of dielectric thin films on the electrical properties of two-dimensional electron gas (2DEG) in the AlGaN/GaN hetero-structures were analyzed. It was found that the additional in-plane biaxial tensile stress was another important factor besides the change in surface potential profile for the device performance improvement of the AlGaN/GaN HEMTs with dielectric thin films as both passivation layers and gate dielectrics. Then, two kinds of polar gate dielectric thin films, the ferroelectric $ LiNbO_{3} $ and the fluorinated $ Al_{2} %$ O_{3} $, were compared for the enhancement-mode GaN-based HEMTs, and an innovative process was proposed. At last, high-permittivity dielectric thin films were adopted as passivation layers to modulate the electric field and accordingly increase the breakdown voltage of GaN-based HEMTs. Moreover, the polyimide embedded with Cr particles effectively increased the breakdown voltage of GaN-based HEMTs. Finally, the effects of high-permittivity dielectric thin films on the potential distribution in the drift region were simulated, which showed an expanded electric field peak at the drain-side edge of gate electrode. | ||
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| 650 | 4 | |a Gate dielectrics |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Enhancement-mode HEMTs |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a High-permittivity field plate |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Liu, Xing-Zhao |4 aut | |
| 700 | 1 | |a Zhu, Jun |4 aut | |
| 700 | 1 | |a Zhang, Ji-Hua |4 aut | |
| 700 | 1 | |a Qian, Lin-Xuan |4 aut | |
| 700 | 1 | |a Zhang, Wan-Li |4 aut | |
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10.1007/s12598-015-0451-3 doi (DE-627)SPR02625476X (SPR)s12598-015-0451-3-e DE-627 ger DE-627 rakwb eng Li, Yan-Rong verfasserin aut Dielectric thin films for GaN-based high-electron-mobility transistors 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2015 Abstract The effects of dielectric thin films on the performance of GaN-based high-electron-mobility transistors (HEMTs) were reviewed in this work. Firstly, the nonpolar dielectric thin films which act as both the surface passivation layers and the gate insulators of the high-frequency GaN-based high-electron-mobility transistors were presented. Furthermore, the influences of dielectric thin films on the electrical properties of two-dimensional electron gas (2DEG) in the AlGaN/GaN hetero-structures were analyzed. It was found that the additional in-plane biaxial tensile stress was another important factor besides the change in surface potential profile for the device performance improvement of the AlGaN/GaN HEMTs with dielectric thin films as both passivation layers and gate dielectrics. Then, two kinds of polar gate dielectric thin films, the ferroelectric $ LiNbO_{3} $ and the fluorinated $ Al_{2} %$ O_{3} $, were compared for the enhancement-mode GaN-based HEMTs, and an innovative process was proposed. At last, high-permittivity dielectric thin films were adopted as passivation layers to modulate the electric field and accordingly increase the breakdown voltage of GaN-based HEMTs. Moreover, the polyimide embedded with Cr particles effectively increased the breakdown voltage of GaN-based HEMTs. Finally, the effects of high-permittivity dielectric thin films on the potential distribution in the drift region were simulated, which showed an expanded electric field peak at the drain-side edge of gate electrode. GaN-based HEMTs (dpeaa)DE-He213 Surface passivation (dpeaa)DE-He213 Gate dielectrics (dpeaa)DE-He213 Enhancement-mode HEMTs (dpeaa)DE-He213 High-permittivity field plate (dpeaa)DE-He213 Liu, Xing-Zhao aut Zhu, Jun aut Zhang, Ji-Hua aut Qian, Lin-Xuan aut Zhang, Wan-Li aut Enthalten in Rare metals Beijing : Yejin Gongye Chubanshe, 1989 34(2015), 6 vom: 05. Feb., Seite 371-380 (DE-627)513219307 (DE-600)2238702-X 1867-7185 nnns volume:34 year:2015 number:6 day:05 month:02 pages:371-380 https://dx.doi.org/10.1007/s12598-015-0451-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 34 2015 6 05 02 371-380 |
| spelling |
10.1007/s12598-015-0451-3 doi (DE-627)SPR02625476X (SPR)s12598-015-0451-3-e DE-627 ger DE-627 rakwb eng Li, Yan-Rong verfasserin aut Dielectric thin films for GaN-based high-electron-mobility transistors 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2015 Abstract The effects of dielectric thin films on the performance of GaN-based high-electron-mobility transistors (HEMTs) were reviewed in this work. Firstly, the nonpolar dielectric thin films which act as both the surface passivation layers and the gate insulators of the high-frequency GaN-based high-electron-mobility transistors were presented. Furthermore, the influences of dielectric thin films on the electrical properties of two-dimensional electron gas (2DEG) in the AlGaN/GaN hetero-structures were analyzed. It was found that the additional in-plane biaxial tensile stress was another important factor besides the change in surface potential profile for the device performance improvement of the AlGaN/GaN HEMTs with dielectric thin films as both passivation layers and gate dielectrics. Then, two kinds of polar gate dielectric thin films, the ferroelectric $ LiNbO_{3} $ and the fluorinated $ Al_{2} %$ O_{3} $, were compared for the enhancement-mode GaN-based HEMTs, and an innovative process was proposed. At last, high-permittivity dielectric thin films were adopted as passivation layers to modulate the electric field and accordingly increase the breakdown voltage of GaN-based HEMTs. Moreover, the polyimide embedded with Cr particles effectively increased the breakdown voltage of GaN-based HEMTs. Finally, the effects of high-permittivity dielectric thin films on the potential distribution in the drift region were simulated, which showed an expanded electric field peak at the drain-side edge of gate electrode. GaN-based HEMTs (dpeaa)DE-He213 Surface passivation (dpeaa)DE-He213 Gate dielectrics (dpeaa)DE-He213 Enhancement-mode HEMTs (dpeaa)DE-He213 High-permittivity field plate (dpeaa)DE-He213 Liu, Xing-Zhao aut Zhu, Jun aut Zhang, Ji-Hua aut Qian, Lin-Xuan aut Zhang, Wan-Li aut Enthalten in Rare metals Beijing : Yejin Gongye Chubanshe, 1989 34(2015), 6 vom: 05. Feb., Seite 371-380 (DE-627)513219307 (DE-600)2238702-X 1867-7185 nnns volume:34 year:2015 number:6 day:05 month:02 pages:371-380 https://dx.doi.org/10.1007/s12598-015-0451-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 34 2015 6 05 02 371-380 |
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10.1007/s12598-015-0451-3 doi (DE-627)SPR02625476X (SPR)s12598-015-0451-3-e DE-627 ger DE-627 rakwb eng Li, Yan-Rong verfasserin aut Dielectric thin films for GaN-based high-electron-mobility transistors 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2015 Abstract The effects of dielectric thin films on the performance of GaN-based high-electron-mobility transistors (HEMTs) were reviewed in this work. Firstly, the nonpolar dielectric thin films which act as both the surface passivation layers and the gate insulators of the high-frequency GaN-based high-electron-mobility transistors were presented. Furthermore, the influences of dielectric thin films on the electrical properties of two-dimensional electron gas (2DEG) in the AlGaN/GaN hetero-structures were analyzed. It was found that the additional in-plane biaxial tensile stress was another important factor besides the change in surface potential profile for the device performance improvement of the AlGaN/GaN HEMTs with dielectric thin films as both passivation layers and gate dielectrics. Then, two kinds of polar gate dielectric thin films, the ferroelectric $ LiNbO_{3} $ and the fluorinated $ Al_{2} %$ O_{3} $, were compared for the enhancement-mode GaN-based HEMTs, and an innovative process was proposed. At last, high-permittivity dielectric thin films were adopted as passivation layers to modulate the electric field and accordingly increase the breakdown voltage of GaN-based HEMTs. Moreover, the polyimide embedded with Cr particles effectively increased the breakdown voltage of GaN-based HEMTs. Finally, the effects of high-permittivity dielectric thin films on the potential distribution in the drift region were simulated, which showed an expanded electric field peak at the drain-side edge of gate electrode. GaN-based HEMTs (dpeaa)DE-He213 Surface passivation (dpeaa)DE-He213 Gate dielectrics (dpeaa)DE-He213 Enhancement-mode HEMTs (dpeaa)DE-He213 High-permittivity field plate (dpeaa)DE-He213 Liu, Xing-Zhao aut Zhu, Jun aut Zhang, Ji-Hua aut Qian, Lin-Xuan aut Zhang, Wan-Li aut Enthalten in Rare metals Beijing : Yejin Gongye Chubanshe, 1989 34(2015), 6 vom: 05. Feb., Seite 371-380 (DE-627)513219307 (DE-600)2238702-X 1867-7185 nnns volume:34 year:2015 number:6 day:05 month:02 pages:371-380 https://dx.doi.org/10.1007/s12598-015-0451-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 34 2015 6 05 02 371-380 |
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10.1007/s12598-015-0451-3 doi (DE-627)SPR02625476X (SPR)s12598-015-0451-3-e DE-627 ger DE-627 rakwb eng Li, Yan-Rong verfasserin aut Dielectric thin films for GaN-based high-electron-mobility transistors 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2015 Abstract The effects of dielectric thin films on the performance of GaN-based high-electron-mobility transistors (HEMTs) were reviewed in this work. Firstly, the nonpolar dielectric thin films which act as both the surface passivation layers and the gate insulators of the high-frequency GaN-based high-electron-mobility transistors were presented. Furthermore, the influences of dielectric thin films on the electrical properties of two-dimensional electron gas (2DEG) in the AlGaN/GaN hetero-structures were analyzed. It was found that the additional in-plane biaxial tensile stress was another important factor besides the change in surface potential profile for the device performance improvement of the AlGaN/GaN HEMTs with dielectric thin films as both passivation layers and gate dielectrics. Then, two kinds of polar gate dielectric thin films, the ferroelectric $ LiNbO_{3} $ and the fluorinated $ Al_{2} %$ O_{3} $, were compared for the enhancement-mode GaN-based HEMTs, and an innovative process was proposed. At last, high-permittivity dielectric thin films were adopted as passivation layers to modulate the electric field and accordingly increase the breakdown voltage of GaN-based HEMTs. Moreover, the polyimide embedded with Cr particles effectively increased the breakdown voltage of GaN-based HEMTs. Finally, the effects of high-permittivity dielectric thin films on the potential distribution in the drift region were simulated, which showed an expanded electric field peak at the drain-side edge of gate electrode. GaN-based HEMTs (dpeaa)DE-He213 Surface passivation (dpeaa)DE-He213 Gate dielectrics (dpeaa)DE-He213 Enhancement-mode HEMTs (dpeaa)DE-He213 High-permittivity field plate (dpeaa)DE-He213 Liu, Xing-Zhao aut Zhu, Jun aut Zhang, Ji-Hua aut Qian, Lin-Xuan aut Zhang, Wan-Li aut Enthalten in Rare metals Beijing : Yejin Gongye Chubanshe, 1989 34(2015), 6 vom: 05. Feb., Seite 371-380 (DE-627)513219307 (DE-600)2238702-X 1867-7185 nnns volume:34 year:2015 number:6 day:05 month:02 pages:371-380 https://dx.doi.org/10.1007/s12598-015-0451-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 34 2015 6 05 02 371-380 |
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10.1007/s12598-015-0451-3 doi (DE-627)SPR02625476X (SPR)s12598-015-0451-3-e DE-627 ger DE-627 rakwb eng Li, Yan-Rong verfasserin aut Dielectric thin films for GaN-based high-electron-mobility transistors 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2015 Abstract The effects of dielectric thin films on the performance of GaN-based high-electron-mobility transistors (HEMTs) were reviewed in this work. Firstly, the nonpolar dielectric thin films which act as both the surface passivation layers and the gate insulators of the high-frequency GaN-based high-electron-mobility transistors were presented. Furthermore, the influences of dielectric thin films on the electrical properties of two-dimensional electron gas (2DEG) in the AlGaN/GaN hetero-structures were analyzed. It was found that the additional in-plane biaxial tensile stress was another important factor besides the change in surface potential profile for the device performance improvement of the AlGaN/GaN HEMTs with dielectric thin films as both passivation layers and gate dielectrics. Then, two kinds of polar gate dielectric thin films, the ferroelectric $ LiNbO_{3} $ and the fluorinated $ Al_{2} %$ O_{3} $, were compared for the enhancement-mode GaN-based HEMTs, and an innovative process was proposed. At last, high-permittivity dielectric thin films were adopted as passivation layers to modulate the electric field and accordingly increase the breakdown voltage of GaN-based HEMTs. Moreover, the polyimide embedded with Cr particles effectively increased the breakdown voltage of GaN-based HEMTs. Finally, the effects of high-permittivity dielectric thin films on the potential distribution in the drift region were simulated, which showed an expanded electric field peak at the drain-side edge of gate electrode. GaN-based HEMTs (dpeaa)DE-He213 Surface passivation (dpeaa)DE-He213 Gate dielectrics (dpeaa)DE-He213 Enhancement-mode HEMTs (dpeaa)DE-He213 High-permittivity field plate (dpeaa)DE-He213 Liu, Xing-Zhao aut Zhu, Jun aut Zhang, Ji-Hua aut Qian, Lin-Xuan aut Zhang, Wan-Li aut Enthalten in Rare metals Beijing : Yejin Gongye Chubanshe, 1989 34(2015), 6 vom: 05. Feb., Seite 371-380 (DE-627)513219307 (DE-600)2238702-X 1867-7185 nnns volume:34 year:2015 number:6 day:05 month:02 pages:371-380 https://dx.doi.org/10.1007/s12598-015-0451-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 34 2015 6 05 02 371-380 |
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Enthalten in Rare metals 34(2015), 6 vom: 05. Feb., Seite 371-380 volume:34 year:2015 number:6 day:05 month:02 pages:371-380 |
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Enthalten in Rare metals 34(2015), 6 vom: 05. Feb., Seite 371-380 volume:34 year:2015 number:6 day:05 month:02 pages:371-380 |
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GaN-based HEMTs Surface passivation Gate dielectrics Enhancement-mode HEMTs High-permittivity field plate |
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Li, Yan-Rong @@aut@@ Liu, Xing-Zhao @@aut@@ Zhu, Jun @@aut@@ Zhang, Ji-Hua @@aut@@ Qian, Lin-Xuan @@aut@@ Zhang, Wan-Li @@aut@@ |
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Firstly, the nonpolar dielectric thin films which act as both the surface passivation layers and the gate insulators of the high-frequency GaN-based high-electron-mobility transistors were presented. Furthermore, the influences of dielectric thin films on the electrical properties of two-dimensional electron gas (2DEG) in the AlGaN/GaN hetero-structures were analyzed. It was found that the additional in-plane biaxial tensile stress was another important factor besides the change in surface potential profile for the device performance improvement of the AlGaN/GaN HEMTs with dielectric thin films as both passivation layers and gate dielectrics. Then, two kinds of polar gate dielectric thin films, the ferroelectric $ LiNbO_{3} $ and the fluorinated $ Al_{2} %$ O_{3} $, were compared for the enhancement-mode GaN-based HEMTs, and an innovative process was proposed. At last, high-permittivity dielectric thin films were adopted as passivation layers to modulate the electric field and accordingly increase the breakdown voltage of GaN-based HEMTs. Moreover, the polyimide embedded with Cr particles effectively increased the breakdown voltage of GaN-based HEMTs. Finally, the effects of high-permittivity dielectric thin films on the potential distribution in the drift region were simulated, which showed an expanded electric field peak at the drain-side edge of gate electrode.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">GaN-based HEMTs</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surface passivation</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gate dielectrics</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Enhancement-mode HEMTs</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">High-permittivity field plate</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Liu, Xing-Zhao</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhu, Jun</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, Ji-Hua</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Qian, Lin-Xuan</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, Wan-Li</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Rare metals</subfield><subfield code="d">Beijing : Yejin Gongye Chubanshe, 1989</subfield><subfield code="g">34(2015), 6 vom: 05. 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|
| author |
Li, Yan-Rong |
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Li, Yan-Rong misc GaN-based HEMTs misc Surface passivation misc Gate dielectrics misc Enhancement-mode HEMTs misc High-permittivity field plate Dielectric thin films for GaN-based high-electron-mobility transistors |
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Dielectric thin films for GaN-based high-electron-mobility transistors GaN-based HEMTs (dpeaa)DE-He213 Surface passivation (dpeaa)DE-He213 Gate dielectrics (dpeaa)DE-He213 Enhancement-mode HEMTs (dpeaa)DE-He213 High-permittivity field plate (dpeaa)DE-He213 |
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misc GaN-based HEMTs misc Surface passivation misc Gate dielectrics misc Enhancement-mode HEMTs misc High-permittivity field plate |
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misc GaN-based HEMTs misc Surface passivation misc Gate dielectrics misc Enhancement-mode HEMTs misc High-permittivity field plate |
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misc GaN-based HEMTs misc Surface passivation misc Gate dielectrics misc Enhancement-mode HEMTs misc High-permittivity field plate |
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Elektronische Aufsätze Aufsätze Elektronische Ressource |
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Dielectric thin films for GaN-based high-electron-mobility transistors |
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Dielectric thin films for GaN-based high-electron-mobility transistors |
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Li, Yan-Rong |
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Li, Yan-Rong Liu, Xing-Zhao Zhu, Jun Zhang, Ji-Hua Qian, Lin-Xuan Zhang, Wan-Li |
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34 |
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Elektronische Aufsätze |
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Li, Yan-Rong |
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10.1007/s12598-015-0451-3 |
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dielectric thin films for gan-based high-electron-mobility transistors |
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Dielectric thin films for GaN-based high-electron-mobility transistors |
| abstract |
Abstract The effects of dielectric thin films on the performance of GaN-based high-electron-mobility transistors (HEMTs) were reviewed in this work. Firstly, the nonpolar dielectric thin films which act as both the surface passivation layers and the gate insulators of the high-frequency GaN-based high-electron-mobility transistors were presented. Furthermore, the influences of dielectric thin films on the electrical properties of two-dimensional electron gas (2DEG) in the AlGaN/GaN hetero-structures were analyzed. It was found that the additional in-plane biaxial tensile stress was another important factor besides the change in surface potential profile for the device performance improvement of the AlGaN/GaN HEMTs with dielectric thin films as both passivation layers and gate dielectrics. Then, two kinds of polar gate dielectric thin films, the ferroelectric $ LiNbO_{3} $ and the fluorinated $ Al_{2} %$ O_{3} $, were compared for the enhancement-mode GaN-based HEMTs, and an innovative process was proposed. At last, high-permittivity dielectric thin films were adopted as passivation layers to modulate the electric field and accordingly increase the breakdown voltage of GaN-based HEMTs. Moreover, the polyimide embedded with Cr particles effectively increased the breakdown voltage of GaN-based HEMTs. Finally, the effects of high-permittivity dielectric thin films on the potential distribution in the drift region were simulated, which showed an expanded electric field peak at the drain-side edge of gate electrode. © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2015 |
| abstractGer |
Abstract The effects of dielectric thin films on the performance of GaN-based high-electron-mobility transistors (HEMTs) were reviewed in this work. Firstly, the nonpolar dielectric thin films which act as both the surface passivation layers and the gate insulators of the high-frequency GaN-based high-electron-mobility transistors were presented. Furthermore, the influences of dielectric thin films on the electrical properties of two-dimensional electron gas (2DEG) in the AlGaN/GaN hetero-structures were analyzed. It was found that the additional in-plane biaxial tensile stress was another important factor besides the change in surface potential profile for the device performance improvement of the AlGaN/GaN HEMTs with dielectric thin films as both passivation layers and gate dielectrics. Then, two kinds of polar gate dielectric thin films, the ferroelectric $ LiNbO_{3} $ and the fluorinated $ Al_{2} %$ O_{3} $, were compared for the enhancement-mode GaN-based HEMTs, and an innovative process was proposed. At last, high-permittivity dielectric thin films were adopted as passivation layers to modulate the electric field and accordingly increase the breakdown voltage of GaN-based HEMTs. Moreover, the polyimide embedded with Cr particles effectively increased the breakdown voltage of GaN-based HEMTs. Finally, the effects of high-permittivity dielectric thin films on the potential distribution in the drift region were simulated, which showed an expanded electric field peak at the drain-side edge of gate electrode. © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2015 |
| abstract_unstemmed |
Abstract The effects of dielectric thin films on the performance of GaN-based high-electron-mobility transistors (HEMTs) were reviewed in this work. Firstly, the nonpolar dielectric thin films which act as both the surface passivation layers and the gate insulators of the high-frequency GaN-based high-electron-mobility transistors were presented. Furthermore, the influences of dielectric thin films on the electrical properties of two-dimensional electron gas (2DEG) in the AlGaN/GaN hetero-structures were analyzed. It was found that the additional in-plane biaxial tensile stress was another important factor besides the change in surface potential profile for the device performance improvement of the AlGaN/GaN HEMTs with dielectric thin films as both passivation layers and gate dielectrics. Then, two kinds of polar gate dielectric thin films, the ferroelectric $ LiNbO_{3} $ and the fluorinated $ Al_{2} %$ O_{3} $, were compared for the enhancement-mode GaN-based HEMTs, and an innovative process was proposed. At last, high-permittivity dielectric thin films were adopted as passivation layers to modulate the electric field and accordingly increase the breakdown voltage of GaN-based HEMTs. Moreover, the polyimide embedded with Cr particles effectively increased the breakdown voltage of GaN-based HEMTs. Finally, the effects of high-permittivity dielectric thin films on the potential distribution in the drift region were simulated, which showed an expanded electric field peak at the drain-side edge of gate electrode. © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2015 |
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| container_issue |
6 |
| title_short |
Dielectric thin films for GaN-based high-electron-mobility transistors |
| url |
https://dx.doi.org/10.1007/s12598-015-0451-3 |
| remote_bool |
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| author2 |
Liu, Xing-Zhao Zhu, Jun Zhang, Ji-Hua Qian, Lin-Xuan Zhang, Wan-Li |
| author2Str |
Liu, Xing-Zhao Zhu, Jun Zhang, Ji-Hua Qian, Lin-Xuan Zhang, Wan-Li |
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| doi_str |
10.1007/s12598-015-0451-3 |
| up_date |
2024-07-03T19:48:09.191Z |
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| score |
7.3975716 |