Processing Methods of Silicon to its Ingot: a Review
Abstract Any metal must be processed from its ore before employing it in various industrial applications; this is the similar case with Silicon (Si) as well. Occurring in the form of silicates in the earth’s crust, Si must be processed to achieve high purity for industrial applications. A major shar...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Prakash, Vemuri [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Nature B.V. 2018 |
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| Übergeordnetes Werk: |
Enthalten in: Silicon - Dordrecht : Springer Netherlands, 2009, 11(2018), 3 vom: 21. Sept., Seite 1617-1634 |
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| Übergeordnetes Werk: |
volume:11 ; year:2018 ; number:3 ; day:21 ; month:09 ; pages:1617-1634 |
| Links: |
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| DOI / URN: |
10.1007/s12633-018-9983-0 |
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SPR026498316 |
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| 520 | |a Abstract Any metal must be processed from its ore before employing it in various industrial applications; this is the similar case with Silicon (Si) as well. Occurring in the form of silicates in the earth’s crust, Si must be processed to achieve high purity for industrial applications. A major share of Si goes into the production of its wafers on which miniaturized circuits can be integrated and these wafers are also used in making solar cells. These wafers are produced by dividing Si chips into smaller parts, and the Si chips are produced by slicing Si ingots. Once the ingot is produced there is no scope to increase the purity of the Si, and the wafers will have purity less than or equal to the ingot purity and the solar cells produced will have equivalent conversion efficiency. Hence, the production of Si ingot plays a very crucial role at the back-end in determining the final purity of the wafer or efficiency of the solar cell. The pace at which the technology is developing today forecasts a huge demand of high purity Si wafers and alternate energy sources are also which in turn demands further increase in purity that makes the Si ingot production highly important. The present-day use of very large-scale integration techniques and the advancement towards the ultra-large-scale integration further makes Si chips foremost resourceful. The current review work aims to compile the capabilities of existing Si ingot production methods which are already employed in industries and production methods that are still being researched upon, and to present critical analysis which has been done to provide the method to be chosen to produce Si ingot based on application, production quality and quantity. | ||
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| 700 | 1 | |a Agarwal, Abhishek |4 aut | |
| 700 | 1 | |a Mussada, Eswara Krishna |0 (orcid)0000-0003-4113-354X |4 aut | |
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10.1007/s12633-018-9983-0 doi (DE-627)SPR026498316 (SPR)s12633-018-9983-0-e DE-627 ger DE-627 rakwb eng Prakash, Vemuri verfasserin aut Processing Methods of Silicon to its Ingot: a Review 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Nature B.V. 2018 Abstract Any metal must be processed from its ore before employing it in various industrial applications; this is the similar case with Silicon (Si) as well. Occurring in the form of silicates in the earth’s crust, Si must be processed to achieve high purity for industrial applications. A major share of Si goes into the production of its wafers on which miniaturized circuits can be integrated and these wafers are also used in making solar cells. These wafers are produced by dividing Si chips into smaller parts, and the Si chips are produced by slicing Si ingots. Once the ingot is produced there is no scope to increase the purity of the Si, and the wafers will have purity less than or equal to the ingot purity and the solar cells produced will have equivalent conversion efficiency. Hence, the production of Si ingot plays a very crucial role at the back-end in determining the final purity of the wafer or efficiency of the solar cell. The pace at which the technology is developing today forecasts a huge demand of high purity Si wafers and alternate energy sources are also which in turn demands further increase in purity that makes the Si ingot production highly important. The present-day use of very large-scale integration techniques and the advancement towards the ultra-large-scale integration further makes Si chips foremost resourceful. The current review work aims to compile the capabilities of existing Si ingot production methods which are already employed in industries and production methods that are still being researched upon, and to present critical analysis which has been done to provide the method to be chosen to produce Si ingot based on application, production quality and quantity. Si (dpeaa)DE-He213 Ingot (dpeaa)DE-He213 Crystal pulling techniques (dpeaa)DE-He213 Solidification techniques (dpeaa)DE-He213 Solar cells (dpeaa)DE-He213 Solar chips (dpeaa)DE-He213 Agarwal, Abhishek aut Mussada, Eswara Krishna (orcid)0000-0003-4113-354X aut Enthalten in Silicon Dordrecht : Springer Netherlands, 2009 11(2018), 3 vom: 21. Sept., Seite 1617-1634 (DE-627)598789545 (DE-600)2491562-2 1876-9918 nnns volume:11 year:2018 number:3 day:21 month:09 pages:1617-1634 https://dx.doi.org/10.1007/s12633-018-9983-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 11 2018 3 21 09 1617-1634 |
| spelling |
10.1007/s12633-018-9983-0 doi (DE-627)SPR026498316 (SPR)s12633-018-9983-0-e DE-627 ger DE-627 rakwb eng Prakash, Vemuri verfasserin aut Processing Methods of Silicon to its Ingot: a Review 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Nature B.V. 2018 Abstract Any metal must be processed from its ore before employing it in various industrial applications; this is the similar case with Silicon (Si) as well. Occurring in the form of silicates in the earth’s crust, Si must be processed to achieve high purity for industrial applications. A major share of Si goes into the production of its wafers on which miniaturized circuits can be integrated and these wafers are also used in making solar cells. These wafers are produced by dividing Si chips into smaller parts, and the Si chips are produced by slicing Si ingots. Once the ingot is produced there is no scope to increase the purity of the Si, and the wafers will have purity less than or equal to the ingot purity and the solar cells produced will have equivalent conversion efficiency. Hence, the production of Si ingot plays a very crucial role at the back-end in determining the final purity of the wafer or efficiency of the solar cell. The pace at which the technology is developing today forecasts a huge demand of high purity Si wafers and alternate energy sources are also which in turn demands further increase in purity that makes the Si ingot production highly important. The present-day use of very large-scale integration techniques and the advancement towards the ultra-large-scale integration further makes Si chips foremost resourceful. The current review work aims to compile the capabilities of existing Si ingot production methods which are already employed in industries and production methods that are still being researched upon, and to present critical analysis which has been done to provide the method to be chosen to produce Si ingot based on application, production quality and quantity. Si (dpeaa)DE-He213 Ingot (dpeaa)DE-He213 Crystal pulling techniques (dpeaa)DE-He213 Solidification techniques (dpeaa)DE-He213 Solar cells (dpeaa)DE-He213 Solar chips (dpeaa)DE-He213 Agarwal, Abhishek aut Mussada, Eswara Krishna (orcid)0000-0003-4113-354X aut Enthalten in Silicon Dordrecht : Springer Netherlands, 2009 11(2018), 3 vom: 21. Sept., Seite 1617-1634 (DE-627)598789545 (DE-600)2491562-2 1876-9918 nnns volume:11 year:2018 number:3 day:21 month:09 pages:1617-1634 https://dx.doi.org/10.1007/s12633-018-9983-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 11 2018 3 21 09 1617-1634 |
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10.1007/s12633-018-9983-0 doi (DE-627)SPR026498316 (SPR)s12633-018-9983-0-e DE-627 ger DE-627 rakwb eng Prakash, Vemuri verfasserin aut Processing Methods of Silicon to its Ingot: a Review 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Nature B.V. 2018 Abstract Any metal must be processed from its ore before employing it in various industrial applications; this is the similar case with Silicon (Si) as well. Occurring in the form of silicates in the earth’s crust, Si must be processed to achieve high purity for industrial applications. A major share of Si goes into the production of its wafers on which miniaturized circuits can be integrated and these wafers are also used in making solar cells. These wafers are produced by dividing Si chips into smaller parts, and the Si chips are produced by slicing Si ingots. Once the ingot is produced there is no scope to increase the purity of the Si, and the wafers will have purity less than or equal to the ingot purity and the solar cells produced will have equivalent conversion efficiency. Hence, the production of Si ingot plays a very crucial role at the back-end in determining the final purity of the wafer or efficiency of the solar cell. The pace at which the technology is developing today forecasts a huge demand of high purity Si wafers and alternate energy sources are also which in turn demands further increase in purity that makes the Si ingot production highly important. The present-day use of very large-scale integration techniques and the advancement towards the ultra-large-scale integration further makes Si chips foremost resourceful. The current review work aims to compile the capabilities of existing Si ingot production methods which are already employed in industries and production methods that are still being researched upon, and to present critical analysis which has been done to provide the method to be chosen to produce Si ingot based on application, production quality and quantity. Si (dpeaa)DE-He213 Ingot (dpeaa)DE-He213 Crystal pulling techniques (dpeaa)DE-He213 Solidification techniques (dpeaa)DE-He213 Solar cells (dpeaa)DE-He213 Solar chips (dpeaa)DE-He213 Agarwal, Abhishek aut Mussada, Eswara Krishna (orcid)0000-0003-4113-354X aut Enthalten in Silicon Dordrecht : Springer Netherlands, 2009 11(2018), 3 vom: 21. Sept., Seite 1617-1634 (DE-627)598789545 (DE-600)2491562-2 1876-9918 nnns volume:11 year:2018 number:3 day:21 month:09 pages:1617-1634 https://dx.doi.org/10.1007/s12633-018-9983-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 11 2018 3 21 09 1617-1634 |
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10.1007/s12633-018-9983-0 doi (DE-627)SPR026498316 (SPR)s12633-018-9983-0-e DE-627 ger DE-627 rakwb eng Prakash, Vemuri verfasserin aut Processing Methods of Silicon to its Ingot: a Review 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Nature B.V. 2018 Abstract Any metal must be processed from its ore before employing it in various industrial applications; this is the similar case with Silicon (Si) as well. Occurring in the form of silicates in the earth’s crust, Si must be processed to achieve high purity for industrial applications. A major share of Si goes into the production of its wafers on which miniaturized circuits can be integrated and these wafers are also used in making solar cells. These wafers are produced by dividing Si chips into smaller parts, and the Si chips are produced by slicing Si ingots. Once the ingot is produced there is no scope to increase the purity of the Si, and the wafers will have purity less than or equal to the ingot purity and the solar cells produced will have equivalent conversion efficiency. Hence, the production of Si ingot plays a very crucial role at the back-end in determining the final purity of the wafer or efficiency of the solar cell. The pace at which the technology is developing today forecasts a huge demand of high purity Si wafers and alternate energy sources are also which in turn demands further increase in purity that makes the Si ingot production highly important. The present-day use of very large-scale integration techniques and the advancement towards the ultra-large-scale integration further makes Si chips foremost resourceful. The current review work aims to compile the capabilities of existing Si ingot production methods which are already employed in industries and production methods that are still being researched upon, and to present critical analysis which has been done to provide the method to be chosen to produce Si ingot based on application, production quality and quantity. Si (dpeaa)DE-He213 Ingot (dpeaa)DE-He213 Crystal pulling techniques (dpeaa)DE-He213 Solidification techniques (dpeaa)DE-He213 Solar cells (dpeaa)DE-He213 Solar chips (dpeaa)DE-He213 Agarwal, Abhishek aut Mussada, Eswara Krishna (orcid)0000-0003-4113-354X aut Enthalten in Silicon Dordrecht : Springer Netherlands, 2009 11(2018), 3 vom: 21. Sept., Seite 1617-1634 (DE-627)598789545 (DE-600)2491562-2 1876-9918 nnns volume:11 year:2018 number:3 day:21 month:09 pages:1617-1634 https://dx.doi.org/10.1007/s12633-018-9983-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 11 2018 3 21 09 1617-1634 |
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10.1007/s12633-018-9983-0 doi (DE-627)SPR026498316 (SPR)s12633-018-9983-0-e DE-627 ger DE-627 rakwb eng Prakash, Vemuri verfasserin aut Processing Methods of Silicon to its Ingot: a Review 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Nature B.V. 2018 Abstract Any metal must be processed from its ore before employing it in various industrial applications; this is the similar case with Silicon (Si) as well. Occurring in the form of silicates in the earth’s crust, Si must be processed to achieve high purity for industrial applications. A major share of Si goes into the production of its wafers on which miniaturized circuits can be integrated and these wafers are also used in making solar cells. These wafers are produced by dividing Si chips into smaller parts, and the Si chips are produced by slicing Si ingots. Once the ingot is produced there is no scope to increase the purity of the Si, and the wafers will have purity less than or equal to the ingot purity and the solar cells produced will have equivalent conversion efficiency. Hence, the production of Si ingot plays a very crucial role at the back-end in determining the final purity of the wafer or efficiency of the solar cell. The pace at which the technology is developing today forecasts a huge demand of high purity Si wafers and alternate energy sources are also which in turn demands further increase in purity that makes the Si ingot production highly important. The present-day use of very large-scale integration techniques and the advancement towards the ultra-large-scale integration further makes Si chips foremost resourceful. The current review work aims to compile the capabilities of existing Si ingot production methods which are already employed in industries and production methods that are still being researched upon, and to present critical analysis which has been done to provide the method to be chosen to produce Si ingot based on application, production quality and quantity. Si (dpeaa)DE-He213 Ingot (dpeaa)DE-He213 Crystal pulling techniques (dpeaa)DE-He213 Solidification techniques (dpeaa)DE-He213 Solar cells (dpeaa)DE-He213 Solar chips (dpeaa)DE-He213 Agarwal, Abhishek aut Mussada, Eswara Krishna (orcid)0000-0003-4113-354X aut Enthalten in Silicon Dordrecht : Springer Netherlands, 2009 11(2018), 3 vom: 21. Sept., Seite 1617-1634 (DE-627)598789545 (DE-600)2491562-2 1876-9918 nnns volume:11 year:2018 number:3 day:21 month:09 pages:1617-1634 https://dx.doi.org/10.1007/s12633-018-9983-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 11 2018 3 21 09 1617-1634 |
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Prakash, Vemuri |
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Processing Methods of Silicon to its Ingot: a Review Si (dpeaa)DE-He213 Ingot (dpeaa)DE-He213 Crystal pulling techniques (dpeaa)DE-He213 Solidification techniques (dpeaa)DE-He213 Solar cells (dpeaa)DE-He213 Solar chips (dpeaa)DE-He213 |
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processing methods of silicon to its ingot: a review |
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Processing Methods of Silicon to its Ingot: a Review |
| abstract |
Abstract Any metal must be processed from its ore before employing it in various industrial applications; this is the similar case with Silicon (Si) as well. Occurring in the form of silicates in the earth’s crust, Si must be processed to achieve high purity for industrial applications. A major share of Si goes into the production of its wafers on which miniaturized circuits can be integrated and these wafers are also used in making solar cells. These wafers are produced by dividing Si chips into smaller parts, and the Si chips are produced by slicing Si ingots. Once the ingot is produced there is no scope to increase the purity of the Si, and the wafers will have purity less than or equal to the ingot purity and the solar cells produced will have equivalent conversion efficiency. Hence, the production of Si ingot plays a very crucial role at the back-end in determining the final purity of the wafer or efficiency of the solar cell. The pace at which the technology is developing today forecasts a huge demand of high purity Si wafers and alternate energy sources are also which in turn demands further increase in purity that makes the Si ingot production highly important. The present-day use of very large-scale integration techniques and the advancement towards the ultra-large-scale integration further makes Si chips foremost resourceful. The current review work aims to compile the capabilities of existing Si ingot production methods which are already employed in industries and production methods that are still being researched upon, and to present critical analysis which has been done to provide the method to be chosen to produce Si ingot based on application, production quality and quantity. © Springer Nature B.V. 2018 |
| abstractGer |
Abstract Any metal must be processed from its ore before employing it in various industrial applications; this is the similar case with Silicon (Si) as well. Occurring in the form of silicates in the earth’s crust, Si must be processed to achieve high purity for industrial applications. A major share of Si goes into the production of its wafers on which miniaturized circuits can be integrated and these wafers are also used in making solar cells. These wafers are produced by dividing Si chips into smaller parts, and the Si chips are produced by slicing Si ingots. Once the ingot is produced there is no scope to increase the purity of the Si, and the wafers will have purity less than or equal to the ingot purity and the solar cells produced will have equivalent conversion efficiency. Hence, the production of Si ingot plays a very crucial role at the back-end in determining the final purity of the wafer or efficiency of the solar cell. The pace at which the technology is developing today forecasts a huge demand of high purity Si wafers and alternate energy sources are also which in turn demands further increase in purity that makes the Si ingot production highly important. The present-day use of very large-scale integration techniques and the advancement towards the ultra-large-scale integration further makes Si chips foremost resourceful. The current review work aims to compile the capabilities of existing Si ingot production methods which are already employed in industries and production methods that are still being researched upon, and to present critical analysis which has been done to provide the method to be chosen to produce Si ingot based on application, production quality and quantity. © Springer Nature B.V. 2018 |
| abstract_unstemmed |
Abstract Any metal must be processed from its ore before employing it in various industrial applications; this is the similar case with Silicon (Si) as well. Occurring in the form of silicates in the earth’s crust, Si must be processed to achieve high purity for industrial applications. A major share of Si goes into the production of its wafers on which miniaturized circuits can be integrated and these wafers are also used in making solar cells. These wafers are produced by dividing Si chips into smaller parts, and the Si chips are produced by slicing Si ingots. Once the ingot is produced there is no scope to increase the purity of the Si, and the wafers will have purity less than or equal to the ingot purity and the solar cells produced will have equivalent conversion efficiency. Hence, the production of Si ingot plays a very crucial role at the back-end in determining the final purity of the wafer or efficiency of the solar cell. The pace at which the technology is developing today forecasts a huge demand of high purity Si wafers and alternate energy sources are also which in turn demands further increase in purity that makes the Si ingot production highly important. The present-day use of very large-scale integration techniques and the advancement towards the ultra-large-scale integration further makes Si chips foremost resourceful. The current review work aims to compile the capabilities of existing Si ingot production methods which are already employed in industries and production methods that are still being researched upon, and to present critical analysis which has been done to provide the method to be chosen to produce Si ingot based on application, production quality and quantity. © Springer Nature B.V. 2018 |
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Processing Methods of Silicon to its Ingot: a Review |
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Agarwal, Abhishek Mussada, Eswara Krishna |
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| score |
7.4017067 |