Optical and impedance studies of pure and Ba-doped ZnS quantum dots

Abstract Chemical precipitation method using a high-boiling solvent is used to synthesize ZnS and Ba-doped ZnS quantum dots. The presence of organic ligands in the prepared nanostructures is verified using Fourier transform infra-red spectroscopic studies. The samples have been analysed using X-ray...
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Autor*in:	Firdous, Arfat [verfasserIn] Baba, M. Aslam Singh, D. Bhat, Abdul Hamid

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2014

Schlagwörter:	CdS Quantum dots Doping EDX TEM FTIR Optical properties Impedance properties

Anmerkung:	© The Author(s) 2014

Übergeordnetes Werk:	Enthalten in: Applied nanoscience - Berlin : Springer, 2011, 5(2014), 2 vom: 09. Apr., Seite 201-206
Übergeordnetes Werk:	volume:5 ; year:2014 ; number:2 ; day:09 ; month:04 ; pages:201-206

Links:	Volltext

DOI / URN:	10.1007/s13204-014-0306-5

Katalog-ID:	SPR031522971

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245	1	0	\|a Optical and impedance studies of pure and Ba-doped ZnS quantum dots
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520			\|a Abstract Chemical precipitation method using a high-boiling solvent is used to synthesize ZnS and Ba-doped ZnS quantum dots. The presence of organic ligands in the prepared nanostructures is verified using Fourier transform infra-red spectroscopic studies. The samples have been analysed using X-ray diffraction analysis confirming nanocrystallinity of the as-prepared quantum dots (QD). The mean crystal size obtained by full width half maxima analysis is 3.2 nm for ZnS and 3.9, 4.2 nm for ZnS:Ba (2, 4 mM). TEM micrographs also reveal nanosized particles of ZnS and Ba-doped ZnS. An optical absorption study conducted in UV–Vis range 150–600 nm reveals the transparency of these quantum dots in entire visible range but not in ultraviolet range. The results based on optical analysis yield band gap values as 4.88 eV for ZnS and 4.69, 4.43 eV for ZnS:Ba (2, 4 mM) quantum dots. Impedance analysis of the samples was carried out to reveal the variation of impedance with frequency at room temperature. These results show the capacitive admittance associated with the quantum dots and hence nanostructure ZnS and Ba-doped ZnS can have potential applications in electronics as nano-tuned devices in which resonant frequency can be adjusted by controlling the size and shape of the quantum dots.
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700	1		\|a Singh, D. \|4 aut
700	1		\|a Bhat, Abdul Hamid \|4 aut
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allfields	10.1007/s13204-014-0306-5 doi (DE-627)SPR031522971 (SPR)s13204-014-0306-5-e DE-627 ger DE-627 rakwb eng Firdous, Arfat verfasserin aut Optical and impedance studies of pure and Ba-doped ZnS quantum dots 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2014 Abstract Chemical precipitation method using a high-boiling solvent is used to synthesize ZnS and Ba-doped ZnS quantum dots. The presence of organic ligands in the prepared nanostructures is verified using Fourier transform infra-red spectroscopic studies. The samples have been analysed using X-ray diffraction analysis confirming nanocrystallinity of the as-prepared quantum dots (QD). The mean crystal size obtained by full width half maxima analysis is 3.2 nm for ZnS and 3.9, 4.2 nm for ZnS:Ba (2, 4 mM). TEM micrographs also reveal nanosized particles of ZnS and Ba-doped ZnS. An optical absorption study conducted in UV–Vis range 150–600 nm reveals the transparency of these quantum dots in entire visible range but not in ultraviolet range. The results based on optical analysis yield band gap values as 4.88 eV for ZnS and 4.69, 4.43 eV for ZnS:Ba (2, 4 mM) quantum dots. Impedance analysis of the samples was carried out to reveal the variation of impedance with frequency at room temperature. These results show the capacitive admittance associated with the quantum dots and hence nanostructure ZnS and Ba-doped ZnS can have potential applications in electronics as nano-tuned devices in which resonant frequency can be adjusted by controlling the size and shape of the quantum dots. CdS Quantum dots (dpeaa)DE-He213 Doping (dpeaa)DE-He213 EDX (dpeaa)DE-He213 TEM FTIR (dpeaa)DE-He213 Optical properties (dpeaa)DE-He213 Impedance properties (dpeaa)DE-He213 Baba, M. Aslam aut Singh, D. aut Bhat, Abdul Hamid aut Enthalten in Applied nanoscience Berlin : Springer, 2011 5(2014), 2 vom: 09. Apr., Seite 201-206 (DE-627)658009001 (DE-600)2607723-1 2190-5517 nnns volume:5 year:2014 number:2 day:09 month:04 pages:201-206 https://dx.doi.org/10.1007/s13204-014-0306-5 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 5 2014 2 09 04 201-206
spelling	10.1007/s13204-014-0306-5 doi (DE-627)SPR031522971 (SPR)s13204-014-0306-5-e DE-627 ger DE-627 rakwb eng Firdous, Arfat verfasserin aut Optical and impedance studies of pure and Ba-doped ZnS quantum dots 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2014 Abstract Chemical precipitation method using a high-boiling solvent is used to synthesize ZnS and Ba-doped ZnS quantum dots. The presence of organic ligands in the prepared nanostructures is verified using Fourier transform infra-red spectroscopic studies. The samples have been analysed using X-ray diffraction analysis confirming nanocrystallinity of the as-prepared quantum dots (QD). The mean crystal size obtained by full width half maxima analysis is 3.2 nm for ZnS and 3.9, 4.2 nm for ZnS:Ba (2, 4 mM). TEM micrographs also reveal nanosized particles of ZnS and Ba-doped ZnS. An optical absorption study conducted in UV–Vis range 150–600 nm reveals the transparency of these quantum dots in entire visible range but not in ultraviolet range. The results based on optical analysis yield band gap values as 4.88 eV for ZnS and 4.69, 4.43 eV for ZnS:Ba (2, 4 mM) quantum dots. Impedance analysis of the samples was carried out to reveal the variation of impedance with frequency at room temperature. These results show the capacitive admittance associated with the quantum dots and hence nanostructure ZnS and Ba-doped ZnS can have potential applications in electronics as nano-tuned devices in which resonant frequency can be adjusted by controlling the size and shape of the quantum dots. CdS Quantum dots (dpeaa)DE-He213 Doping (dpeaa)DE-He213 EDX (dpeaa)DE-He213 TEM FTIR (dpeaa)DE-He213 Optical properties (dpeaa)DE-He213 Impedance properties (dpeaa)DE-He213 Baba, M. Aslam aut Singh, D. aut Bhat, Abdul Hamid aut Enthalten in Applied nanoscience Berlin : Springer, 2011 5(2014), 2 vom: 09. Apr., Seite 201-206 (DE-627)658009001 (DE-600)2607723-1 2190-5517 nnns volume:5 year:2014 number:2 day:09 month:04 pages:201-206 https://dx.doi.org/10.1007/s13204-014-0306-5 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 5 2014 2 09 04 201-206
allfields_unstemmed	10.1007/s13204-014-0306-5 doi (DE-627)SPR031522971 (SPR)s13204-014-0306-5-e DE-627 ger DE-627 rakwb eng Firdous, Arfat verfasserin aut Optical and impedance studies of pure and Ba-doped ZnS quantum dots 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2014 Abstract Chemical precipitation method using a high-boiling solvent is used to synthesize ZnS and Ba-doped ZnS quantum dots. The presence of organic ligands in the prepared nanostructures is verified using Fourier transform infra-red spectroscopic studies. The samples have been analysed using X-ray diffraction analysis confirming nanocrystallinity of the as-prepared quantum dots (QD). The mean crystal size obtained by full width half maxima analysis is 3.2 nm for ZnS and 3.9, 4.2 nm for ZnS:Ba (2, 4 mM). TEM micrographs also reveal nanosized particles of ZnS and Ba-doped ZnS. An optical absorption study conducted in UV–Vis range 150–600 nm reveals the transparency of these quantum dots in entire visible range but not in ultraviolet range. The results based on optical analysis yield band gap values as 4.88 eV for ZnS and 4.69, 4.43 eV for ZnS:Ba (2, 4 mM) quantum dots. Impedance analysis of the samples was carried out to reveal the variation of impedance with frequency at room temperature. These results show the capacitive admittance associated with the quantum dots and hence nanostructure ZnS and Ba-doped ZnS can have potential applications in electronics as nano-tuned devices in which resonant frequency can be adjusted by controlling the size and shape of the quantum dots. CdS Quantum dots (dpeaa)DE-He213 Doping (dpeaa)DE-He213 EDX (dpeaa)DE-He213 TEM FTIR (dpeaa)DE-He213 Optical properties (dpeaa)DE-He213 Impedance properties (dpeaa)DE-He213 Baba, M. Aslam aut Singh, D. aut Bhat, Abdul Hamid aut Enthalten in Applied nanoscience Berlin : Springer, 2011 5(2014), 2 vom: 09. Apr., Seite 201-206 (DE-627)658009001 (DE-600)2607723-1 2190-5517 nnns volume:5 year:2014 number:2 day:09 month:04 pages:201-206 https://dx.doi.org/10.1007/s13204-014-0306-5 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 5 2014 2 09 04 201-206
allfieldsGer	10.1007/s13204-014-0306-5 doi (DE-627)SPR031522971 (SPR)s13204-014-0306-5-e DE-627 ger DE-627 rakwb eng Firdous, Arfat verfasserin aut Optical and impedance studies of pure and Ba-doped ZnS quantum dots 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2014 Abstract Chemical precipitation method using a high-boiling solvent is used to synthesize ZnS and Ba-doped ZnS quantum dots. The presence of organic ligands in the prepared nanostructures is verified using Fourier transform infra-red spectroscopic studies. The samples have been analysed using X-ray diffraction analysis confirming nanocrystallinity of the as-prepared quantum dots (QD). The mean crystal size obtained by full width half maxima analysis is 3.2 nm for ZnS and 3.9, 4.2 nm for ZnS:Ba (2, 4 mM). TEM micrographs also reveal nanosized particles of ZnS and Ba-doped ZnS. An optical absorption study conducted in UV–Vis range 150–600 nm reveals the transparency of these quantum dots in entire visible range but not in ultraviolet range. The results based on optical analysis yield band gap values as 4.88 eV for ZnS and 4.69, 4.43 eV for ZnS:Ba (2, 4 mM) quantum dots. Impedance analysis of the samples was carried out to reveal the variation of impedance with frequency at room temperature. These results show the capacitive admittance associated with the quantum dots and hence nanostructure ZnS and Ba-doped ZnS can have potential applications in electronics as nano-tuned devices in which resonant frequency can be adjusted by controlling the size and shape of the quantum dots. CdS Quantum dots (dpeaa)DE-He213 Doping (dpeaa)DE-He213 EDX (dpeaa)DE-He213 TEM FTIR (dpeaa)DE-He213 Optical properties (dpeaa)DE-He213 Impedance properties (dpeaa)DE-He213 Baba, M. Aslam aut Singh, D. aut Bhat, Abdul Hamid aut Enthalten in Applied nanoscience Berlin : Springer, 2011 5(2014), 2 vom: 09. Apr., Seite 201-206 (DE-627)658009001 (DE-600)2607723-1 2190-5517 nnns volume:5 year:2014 number:2 day:09 month:04 pages:201-206 https://dx.doi.org/10.1007/s13204-014-0306-5 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 5 2014 2 09 04 201-206
allfieldsSound	10.1007/s13204-014-0306-5 doi (DE-627)SPR031522971 (SPR)s13204-014-0306-5-e DE-627 ger DE-627 rakwb eng Firdous, Arfat verfasserin aut Optical and impedance studies of pure and Ba-doped ZnS quantum dots 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2014 Abstract Chemical precipitation method using a high-boiling solvent is used to synthesize ZnS and Ba-doped ZnS quantum dots. The presence of organic ligands in the prepared nanostructures is verified using Fourier transform infra-red spectroscopic studies. The samples have been analysed using X-ray diffraction analysis confirming nanocrystallinity of the as-prepared quantum dots (QD). The mean crystal size obtained by full width half maxima analysis is 3.2 nm for ZnS and 3.9, 4.2 nm for ZnS:Ba (2, 4 mM). TEM micrographs also reveal nanosized particles of ZnS and Ba-doped ZnS. An optical absorption study conducted in UV–Vis range 150–600 nm reveals the transparency of these quantum dots in entire visible range but not in ultraviolet range. The results based on optical analysis yield band gap values as 4.88 eV for ZnS and 4.69, 4.43 eV for ZnS:Ba (2, 4 mM) quantum dots. Impedance analysis of the samples was carried out to reveal the variation of impedance with frequency at room temperature. These results show the capacitive admittance associated with the quantum dots and hence nanostructure ZnS and Ba-doped ZnS can have potential applications in electronics as nano-tuned devices in which resonant frequency can be adjusted by controlling the size and shape of the quantum dots. CdS Quantum dots (dpeaa)DE-He213 Doping (dpeaa)DE-He213 EDX (dpeaa)DE-He213 TEM FTIR (dpeaa)DE-He213 Optical properties (dpeaa)DE-He213 Impedance properties (dpeaa)DE-He213 Baba, M. Aslam aut Singh, D. aut Bhat, Abdul Hamid aut Enthalten in Applied nanoscience Berlin : Springer, 2011 5(2014), 2 vom: 09. Apr., Seite 201-206 (DE-627)658009001 (DE-600)2607723-1 2190-5517 nnns volume:5 year:2014 number:2 day:09 month:04 pages:201-206 https://dx.doi.org/10.1007/s13204-014-0306-5 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 AR 5 2014 2 09 04 201-206
language	English
source	Enthalten in Applied nanoscience 5(2014), 2 vom: 09. Apr., Seite 201-206 volume:5 year:2014 number:2 day:09 month:04 pages:201-206
sourceStr	Enthalten in Applied nanoscience 5(2014), 2 vom: 09. Apr., Seite 201-206 volume:5 year:2014 number:2 day:09 month:04 pages:201-206
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	CdS Quantum dots Doping EDX TEM FTIR Optical properties Impedance properties
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container_title	Applied nanoscience
authorswithroles_txt_mv	Firdous, Arfat @@aut@@ Baba, M. Aslam @@aut@@ Singh, D. @@aut@@ Bhat, Abdul Hamid @@aut@@
publishDateDaySort_date	2014-04-09T00:00:00Z
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language_de	englisch
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author	Firdous, Arfat
spellingShingle	Firdous, Arfat misc CdS Quantum dots misc Doping misc EDX misc TEM FTIR misc Optical properties misc Impedance properties Optical and impedance studies of pure and Ba-doped ZnS quantum dots
authorStr	Firdous, Arfat
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topic_title	Optical and impedance studies of pure and Ba-doped ZnS quantum dots CdS Quantum dots (dpeaa)DE-He213 Doping (dpeaa)DE-He213 EDX (dpeaa)DE-He213 TEM FTIR (dpeaa)DE-He213 Optical properties (dpeaa)DE-He213 Impedance properties (dpeaa)DE-He213
topic	misc CdS Quantum dots misc Doping misc EDX misc TEM FTIR misc Optical properties misc Impedance properties
topic_unstemmed	misc CdS Quantum dots misc Doping misc EDX misc TEM FTIR misc Optical properties misc Impedance properties
topic_browse	misc CdS Quantum dots misc Doping misc EDX misc TEM FTIR misc Optical properties misc Impedance properties
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title	Optical and impedance studies of pure and Ba-doped ZnS quantum dots
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title_full	Optical and impedance studies of pure and Ba-doped ZnS quantum dots
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author_browse	Firdous, Arfat Baba, M. Aslam Singh, D. Bhat, Abdul Hamid
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author-letter	Firdous, Arfat
doi_str_mv	10.1007/s13204-014-0306-5
title_sort	optical and impedance studies of pure and ba-doped zns quantum dots
title_auth	Optical and impedance studies of pure and Ba-doped ZnS quantum dots
abstract	Abstract Chemical precipitation method using a high-boiling solvent is used to synthesize ZnS and Ba-doped ZnS quantum dots. The presence of organic ligands in the prepared nanostructures is verified using Fourier transform infra-red spectroscopic studies. The samples have been analysed using X-ray diffraction analysis confirming nanocrystallinity of the as-prepared quantum dots (QD). The mean crystal size obtained by full width half maxima analysis is 3.2 nm for ZnS and 3.9, 4.2 nm for ZnS:Ba (2, 4 mM). TEM micrographs also reveal nanosized particles of ZnS and Ba-doped ZnS. An optical absorption study conducted in UV–Vis range 150–600 nm reveals the transparency of these quantum dots in entire visible range but not in ultraviolet range. The results based on optical analysis yield band gap values as 4.88 eV for ZnS and 4.69, 4.43 eV for ZnS:Ba (2, 4 mM) quantum dots. Impedance analysis of the samples was carried out to reveal the variation of impedance with frequency at room temperature. These results show the capacitive admittance associated with the quantum dots and hence nanostructure ZnS and Ba-doped ZnS can have potential applications in electronics as nano-tuned devices in which resonant frequency can be adjusted by controlling the size and shape of the quantum dots. © The Author(s) 2014
abstractGer	Abstract Chemical precipitation method using a high-boiling solvent is used to synthesize ZnS and Ba-doped ZnS quantum dots. The presence of organic ligands in the prepared nanostructures is verified using Fourier transform infra-red spectroscopic studies. The samples have been analysed using X-ray diffraction analysis confirming nanocrystallinity of the as-prepared quantum dots (QD). The mean crystal size obtained by full width half maxima analysis is 3.2 nm for ZnS and 3.9, 4.2 nm for ZnS:Ba (2, 4 mM). TEM micrographs also reveal nanosized particles of ZnS and Ba-doped ZnS. An optical absorption study conducted in UV–Vis range 150–600 nm reveals the transparency of these quantum dots in entire visible range but not in ultraviolet range. The results based on optical analysis yield band gap values as 4.88 eV for ZnS and 4.69, 4.43 eV for ZnS:Ba (2, 4 mM) quantum dots. Impedance analysis of the samples was carried out to reveal the variation of impedance with frequency at room temperature. These results show the capacitive admittance associated with the quantum dots and hence nanostructure ZnS and Ba-doped ZnS can have potential applications in electronics as nano-tuned devices in which resonant frequency can be adjusted by controlling the size and shape of the quantum dots. © The Author(s) 2014
abstract_unstemmed	Abstract Chemical precipitation method using a high-boiling solvent is used to synthesize ZnS and Ba-doped ZnS quantum dots. The presence of organic ligands in the prepared nanostructures is verified using Fourier transform infra-red spectroscopic studies. The samples have been analysed using X-ray diffraction analysis confirming nanocrystallinity of the as-prepared quantum dots (QD). The mean crystal size obtained by full width half maxima analysis is 3.2 nm for ZnS and 3.9, 4.2 nm for ZnS:Ba (2, 4 mM). TEM micrographs also reveal nanosized particles of ZnS and Ba-doped ZnS. An optical absorption study conducted in UV–Vis range 150–600 nm reveals the transparency of these quantum dots in entire visible range but not in ultraviolet range. The results based on optical analysis yield band gap values as 4.88 eV for ZnS and 4.69, 4.43 eV for ZnS:Ba (2, 4 mM) quantum dots. Impedance analysis of the samples was carried out to reveal the variation of impedance with frequency at room temperature. These results show the capacitive admittance associated with the quantum dots and hence nanostructure ZnS and Ba-doped ZnS can have potential applications in electronics as nano-tuned devices in which resonant frequency can be adjusted by controlling the size and shape of the quantum dots. © The Author(s) 2014
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container_issue	2
title_short	Optical and impedance studies of pure and Ba-doped ZnS quantum dots
url	https://dx.doi.org/10.1007/s13204-014-0306-5
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author2	Baba, M. Aslam Singh, D. Bhat, Abdul Hamid
author2Str	Baba, M. Aslam Singh, D. Bhat, Abdul Hamid
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doi_str	10.1007/s13204-014-0306-5
up_date	2024-07-04T00:07:07.210Z
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Optical and impedance studies of pure and Ba-doped ZnS quantum dots

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