Synthesis and thermoelectric properties of n-Type $ Mg_{2} $Si

Abstract Group $ B^{V} $(Bi, Sb)- and $ B^{VI} $(Te, Se)-doped $ Mg_{2} $Si compounds were synthesized by solid state reaction and mechanical alloying. Electronic transport properties (Hall coefficient, carrier concentration and mobility) and thermoelectric properties (Seebeck coefficient, electrica...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Jung, Jae-Yong [verfasserIn] Kim, Il-Ho [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2010

Schlagwörter:	thermoelectric Mg Si mechanical alloying solid state reaction hot pressing

Übergeordnetes Werk:	Enthalten in: Electronic materials letters - Berlin : Springer, 2009, 6(2010), 4 vom: Dez., Seite 187-191
Übergeordnetes Werk:	volume:6 ; year:2010 ; number:4 ; month:12 ; pages:187-191

Links:	Volltext

DOI / URN:	10.3365/eml.2010.12.187

Katalog-ID:	SPR031554393

Internformat


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520			\|a Abstract Group $ B^{V} $(Bi, Sb)- and $ B^{VI} $(Te, Se)-doped $ Mg_{2} $Si compounds were synthesized by solid state reaction and mechanical alloying. Electronic transport properties (Hall coefficient, carrier concentration and mobility) and thermoelectric properties (Seebeck coefficient, electrical conductivity, thermal conductivity and figure-of-merit) were examined. $ Mg_{2} $Si powder was synthesized successfully by solid state reaction at 773 K for 6 h and doped by mechanical alloying for 24 h. Powder was fully consolidated by hot pressing at 1073 K for 1 h. All doped $ Mg_{2} $Si compounds showed n-type conduction, indicating that the electrical conduction is due mainly to electrons. The electrical conductivity increased greatly by doping due to an increase in the carrier concentration. However, the thermal conductivity did not change significantly by doping, which was due to the much larger contribution of the lattice thermal conductivity over the electronic thermal conductivity. Group $ B^{V} $ (Bi, Sb) elements were much more effective at enhancing the thermoelectric properties of $ Mg_{2} $Si than group $ B^{VI} $(Te, Se) elements.
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912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
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912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
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Indexfelder

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matchkey_str	article:20936788:2010----::yteiadhrolcrcrpris
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publishDate	2010
allfields	10.3365/eml.2010.12.187 doi (DE-627)SPR031554393 (SPR)eml.2010.12.187-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Jung, Jae-Yong verfasserin aut Synthesis and thermoelectric properties of n-Type $ Mg_{2} $Si 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Group $ B^{V} $(Bi, Sb)- and $ B^{VI} $(Te, Se)-doped $ Mg_{2} $Si compounds were synthesized by solid state reaction and mechanical alloying. Electronic transport properties (Hall coefficient, carrier concentration and mobility) and thermoelectric properties (Seebeck coefficient, electrical conductivity, thermal conductivity and figure-of-merit) were examined. $ Mg_{2} $Si powder was synthesized successfully by solid state reaction at 773 K for 6 h and doped by mechanical alloying for 24 h. Powder was fully consolidated by hot pressing at 1073 K for 1 h. All doped $ Mg_{2} $Si compounds showed n-type conduction, indicating that the electrical conduction is due mainly to electrons. The electrical conductivity increased greatly by doping due to an increase in the carrier concentration. However, the thermal conductivity did not change significantly by doping, which was due to the much larger contribution of the lattice thermal conductivity over the electronic thermal conductivity. Group $ B^{V} $ (Bi, Sb) elements were much more effective at enhancing the thermoelectric properties of $ Mg_{2} $Si than group $ B^{VI} $(Te, Se) elements. thermoelectric (dpeaa)DE-He213 Mg (dpeaa)DE-He213 Si (dpeaa)DE-He213 mechanical alloying (dpeaa)DE-He213 solid state reaction (dpeaa)DE-He213 hot pressing (dpeaa)DE-He213 Kim, Il-Ho verfasserin aut Enthalten in Electronic materials letters Berlin : Springer, 2009 6(2010), 4 vom: Dez., Seite 187-191 (DE-627)656497157 (DE-600)2604508-4 2093-6788 nnns volume:6 year:2010 number:4 month:12 pages:187-191 https://dx.doi.org/10.3365/eml.2010.12.187 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 6 2010 4 12 187-191
spelling	10.3365/eml.2010.12.187 doi (DE-627)SPR031554393 (SPR)eml.2010.12.187-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Jung, Jae-Yong verfasserin aut Synthesis and thermoelectric properties of n-Type $ Mg_{2} $Si 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Group $ B^{V} $(Bi, Sb)- and $ B^{VI} $(Te, Se)-doped $ Mg_{2} $Si compounds were synthesized by solid state reaction and mechanical alloying. Electronic transport properties (Hall coefficient, carrier concentration and mobility) and thermoelectric properties (Seebeck coefficient, electrical conductivity, thermal conductivity and figure-of-merit) were examined. $ Mg_{2} $Si powder was synthesized successfully by solid state reaction at 773 K for 6 h and doped by mechanical alloying for 24 h. Powder was fully consolidated by hot pressing at 1073 K for 1 h. All doped $ Mg_{2} $Si compounds showed n-type conduction, indicating that the electrical conduction is due mainly to electrons. The electrical conductivity increased greatly by doping due to an increase in the carrier concentration. However, the thermal conductivity did not change significantly by doping, which was due to the much larger contribution of the lattice thermal conductivity over the electronic thermal conductivity. Group $ B^{V} $ (Bi, Sb) elements were much more effective at enhancing the thermoelectric properties of $ Mg_{2} $Si than group $ B^{VI} $(Te, Se) elements. thermoelectric (dpeaa)DE-He213 Mg (dpeaa)DE-He213 Si (dpeaa)DE-He213 mechanical alloying (dpeaa)DE-He213 solid state reaction (dpeaa)DE-He213 hot pressing (dpeaa)DE-He213 Kim, Il-Ho verfasserin aut Enthalten in Electronic materials letters Berlin : Springer, 2009 6(2010), 4 vom: Dez., Seite 187-191 (DE-627)656497157 (DE-600)2604508-4 2093-6788 nnns volume:6 year:2010 number:4 month:12 pages:187-191 https://dx.doi.org/10.3365/eml.2010.12.187 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 6 2010 4 12 187-191
allfields_unstemmed	10.3365/eml.2010.12.187 doi (DE-627)SPR031554393 (SPR)eml.2010.12.187-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Jung, Jae-Yong verfasserin aut Synthesis and thermoelectric properties of n-Type $ Mg_{2} $Si 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Group $ B^{V} $(Bi, Sb)- and $ B^{VI} $(Te, Se)-doped $ Mg_{2} $Si compounds were synthesized by solid state reaction and mechanical alloying. Electronic transport properties (Hall coefficient, carrier concentration and mobility) and thermoelectric properties (Seebeck coefficient, electrical conductivity, thermal conductivity and figure-of-merit) were examined. $ Mg_{2} $Si powder was synthesized successfully by solid state reaction at 773 K for 6 h and doped by mechanical alloying for 24 h. Powder was fully consolidated by hot pressing at 1073 K for 1 h. All doped $ Mg_{2} $Si compounds showed n-type conduction, indicating that the electrical conduction is due mainly to electrons. The electrical conductivity increased greatly by doping due to an increase in the carrier concentration. However, the thermal conductivity did not change significantly by doping, which was due to the much larger contribution of the lattice thermal conductivity over the electronic thermal conductivity. Group $ B^{V} $ (Bi, Sb) elements were much more effective at enhancing the thermoelectric properties of $ Mg_{2} $Si than group $ B^{VI} $(Te, Se) elements. thermoelectric (dpeaa)DE-He213 Mg (dpeaa)DE-He213 Si (dpeaa)DE-He213 mechanical alloying (dpeaa)DE-He213 solid state reaction (dpeaa)DE-He213 hot pressing (dpeaa)DE-He213 Kim, Il-Ho verfasserin aut Enthalten in Electronic materials letters Berlin : Springer, 2009 6(2010), 4 vom: Dez., Seite 187-191 (DE-627)656497157 (DE-600)2604508-4 2093-6788 nnns volume:6 year:2010 number:4 month:12 pages:187-191 https://dx.doi.org/10.3365/eml.2010.12.187 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 6 2010 4 12 187-191
allfieldsGer	10.3365/eml.2010.12.187 doi (DE-627)SPR031554393 (SPR)eml.2010.12.187-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Jung, Jae-Yong verfasserin aut Synthesis and thermoelectric properties of n-Type $ Mg_{2} $Si 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Group $ B^{V} $(Bi, Sb)- and $ B^{VI} $(Te, Se)-doped $ Mg_{2} $Si compounds were synthesized by solid state reaction and mechanical alloying. Electronic transport properties (Hall coefficient, carrier concentration and mobility) and thermoelectric properties (Seebeck coefficient, electrical conductivity, thermal conductivity and figure-of-merit) were examined. $ Mg_{2} $Si powder was synthesized successfully by solid state reaction at 773 K for 6 h and doped by mechanical alloying for 24 h. Powder was fully consolidated by hot pressing at 1073 K for 1 h. All doped $ Mg_{2} $Si compounds showed n-type conduction, indicating that the electrical conduction is due mainly to electrons. The electrical conductivity increased greatly by doping due to an increase in the carrier concentration. However, the thermal conductivity did not change significantly by doping, which was due to the much larger contribution of the lattice thermal conductivity over the electronic thermal conductivity. Group $ B^{V} $ (Bi, Sb) elements were much more effective at enhancing the thermoelectric properties of $ Mg_{2} $Si than group $ B^{VI} $(Te, Se) elements. thermoelectric (dpeaa)DE-He213 Mg (dpeaa)DE-He213 Si (dpeaa)DE-He213 mechanical alloying (dpeaa)DE-He213 solid state reaction (dpeaa)DE-He213 hot pressing (dpeaa)DE-He213 Kim, Il-Ho verfasserin aut Enthalten in Electronic materials letters Berlin : Springer, 2009 6(2010), 4 vom: Dez., Seite 187-191 (DE-627)656497157 (DE-600)2604508-4 2093-6788 nnns volume:6 year:2010 number:4 month:12 pages:187-191 https://dx.doi.org/10.3365/eml.2010.12.187 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 6 2010 4 12 187-191
allfieldsSound	10.3365/eml.2010.12.187 doi (DE-627)SPR031554393 (SPR)eml.2010.12.187-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Jung, Jae-Yong verfasserin aut Synthesis and thermoelectric properties of n-Type $ Mg_{2} $Si 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Group $ B^{V} $(Bi, Sb)- and $ B^{VI} $(Te, Se)-doped $ Mg_{2} $Si compounds were synthesized by solid state reaction and mechanical alloying. Electronic transport properties (Hall coefficient, carrier concentration and mobility) and thermoelectric properties (Seebeck coefficient, electrical conductivity, thermal conductivity and figure-of-merit) were examined. $ Mg_{2} $Si powder was synthesized successfully by solid state reaction at 773 K for 6 h and doped by mechanical alloying for 24 h. Powder was fully consolidated by hot pressing at 1073 K for 1 h. All doped $ Mg_{2} $Si compounds showed n-type conduction, indicating that the electrical conduction is due mainly to electrons. The electrical conductivity increased greatly by doping due to an increase in the carrier concentration. However, the thermal conductivity did not change significantly by doping, which was due to the much larger contribution of the lattice thermal conductivity over the electronic thermal conductivity. Group $ B^{V} $ (Bi, Sb) elements were much more effective at enhancing the thermoelectric properties of $ Mg_{2} $Si than group $ B^{VI} $(Te, Se) elements. thermoelectric (dpeaa)DE-He213 Mg (dpeaa)DE-He213 Si (dpeaa)DE-He213 mechanical alloying (dpeaa)DE-He213 solid state reaction (dpeaa)DE-He213 hot pressing (dpeaa)DE-He213 Kim, Il-Ho verfasserin aut Enthalten in Electronic materials letters Berlin : Springer, 2009 6(2010), 4 vom: Dez., Seite 187-191 (DE-627)656497157 (DE-600)2604508-4 2093-6788 nnns volume:6 year:2010 number:4 month:12 pages:187-191 https://dx.doi.org/10.3365/eml.2010.12.187 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 6 2010 4 12 187-191
language	English
source	Enthalten in Electronic materials letters 6(2010), 4 vom: Dez., Seite 187-191 volume:6 year:2010 number:4 month:12 pages:187-191
sourceStr	Enthalten in Electronic materials letters 6(2010), 4 vom: Dez., Seite 187-191 volume:6 year:2010 number:4 month:12 pages:187-191
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	thermoelectric Mg Si mechanical alloying solid state reaction hot pressing
dewey-raw	620
isfreeaccess_bool	false
container_title	Electronic materials letters
authorswithroles_txt_mv	Jung, Jae-Yong @@aut@@ Kim, Il-Ho @@aut@@
publishDateDaySort_date	2010-12-01T00:00:00Z
hierarchy_top_id	656497157
dewey-sort	3620
id	SPR031554393
language_de	englisch
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Electronic transport properties (Hall coefficient, carrier concentration and mobility) and thermoelectric properties (Seebeck coefficient, electrical conductivity, thermal conductivity and figure-of-merit) were examined. $ Mg_{2} $Si powder was synthesized successfully by solid state reaction at 773 K for 6 h and doped by mechanical alloying for 24 h. Powder was fully consolidated by hot pressing at 1073 K for 1 h. All doped $ Mg_{2} $Si compounds showed n-type conduction, indicating that the electrical conduction is due mainly to electrons. The electrical conductivity increased greatly by doping due to an increase in the carrier concentration. However, the thermal conductivity did not change significantly by doping, which was due to the much larger contribution of the lattice thermal conductivity over the electronic thermal conductivity. 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author	Jung, Jae-Yong
spellingShingle	Jung, Jae-Yong ddc 620 misc thermoelectric misc Mg misc Si misc mechanical alloying misc solid state reaction misc hot pressing Synthesis and thermoelectric properties of n-Type $ Mg_{2} $Si
authorStr	Jung, Jae-Yong
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topic_title	620 660 670 ASE Synthesis and thermoelectric properties of n-Type $ Mg_{2} $Si thermoelectric (dpeaa)DE-He213 Mg (dpeaa)DE-He213 Si (dpeaa)DE-He213 mechanical alloying (dpeaa)DE-He213 solid state reaction (dpeaa)DE-He213 hot pressing (dpeaa)DE-He213
topic	ddc 620 misc thermoelectric misc Mg misc Si misc mechanical alloying misc solid state reaction misc hot pressing
topic_unstemmed	ddc 620 misc thermoelectric misc Mg misc Si misc mechanical alloying misc solid state reaction misc hot pressing
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title	Synthesis and thermoelectric properties of n-Type $ Mg_{2} $Si
ctrlnum	(DE-627)SPR031554393 (SPR)eml.2010.12.187-e
title_full	Synthesis and thermoelectric properties of n-Type $ Mg_{2} $Si
author_sort	Jung, Jae-Yong
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author_browse	Jung, Jae-Yong Kim, Il-Ho
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title_sort	synthesis and thermoelectric properties of n-type $ mg_{2} $si
title_auth	Synthesis and thermoelectric properties of n-Type $ Mg_{2} $Si
abstract	Abstract Group $ B^{V} $(Bi, Sb)- and $ B^{VI} $(Te, Se)-doped $ Mg_{2} $Si compounds were synthesized by solid state reaction and mechanical alloying. Electronic transport properties (Hall coefficient, carrier concentration and mobility) and thermoelectric properties (Seebeck coefficient, electrical conductivity, thermal conductivity and figure-of-merit) were examined. $ Mg_{2} $Si powder was synthesized successfully by solid state reaction at 773 K for 6 h and doped by mechanical alloying for 24 h. Powder was fully consolidated by hot pressing at 1073 K for 1 h. All doped $ Mg_{2} $Si compounds showed n-type conduction, indicating that the electrical conduction is due mainly to electrons. The electrical conductivity increased greatly by doping due to an increase in the carrier concentration. However, the thermal conductivity did not change significantly by doping, which was due to the much larger contribution of the lattice thermal conductivity over the electronic thermal conductivity. Group $ B^{V} $ (Bi, Sb) elements were much more effective at enhancing the thermoelectric properties of $ Mg_{2} $Si than group $ B^{VI} $(Te, Se) elements.
abstractGer	Abstract Group $ B^{V} $(Bi, Sb)- and $ B^{VI} $(Te, Se)-doped $ Mg_{2} $Si compounds were synthesized by solid state reaction and mechanical alloying. Electronic transport properties (Hall coefficient, carrier concentration and mobility) and thermoelectric properties (Seebeck coefficient, electrical conductivity, thermal conductivity and figure-of-merit) were examined. $ Mg_{2} $Si powder was synthesized successfully by solid state reaction at 773 K for 6 h and doped by mechanical alloying for 24 h. Powder was fully consolidated by hot pressing at 1073 K for 1 h. All doped $ Mg_{2} $Si compounds showed n-type conduction, indicating that the electrical conduction is due mainly to electrons. The electrical conductivity increased greatly by doping due to an increase in the carrier concentration. However, the thermal conductivity did not change significantly by doping, which was due to the much larger contribution of the lattice thermal conductivity over the electronic thermal conductivity. Group $ B^{V} $ (Bi, Sb) elements were much more effective at enhancing the thermoelectric properties of $ Mg_{2} $Si than group $ B^{VI} $(Te, Se) elements.
abstract_unstemmed	Abstract Group $ B^{V} $(Bi, Sb)- and $ B^{VI} $(Te, Se)-doped $ Mg_{2} $Si compounds were synthesized by solid state reaction and mechanical alloying. Electronic transport properties (Hall coefficient, carrier concentration and mobility) and thermoelectric properties (Seebeck coefficient, electrical conductivity, thermal conductivity and figure-of-merit) were examined. $ Mg_{2} $Si powder was synthesized successfully by solid state reaction at 773 K for 6 h and doped by mechanical alloying for 24 h. Powder was fully consolidated by hot pressing at 1073 K for 1 h. All doped $ Mg_{2} $Si compounds showed n-type conduction, indicating that the electrical conduction is due mainly to electrons. The electrical conductivity increased greatly by doping due to an increase in the carrier concentration. However, the thermal conductivity did not change significantly by doping, which was due to the much larger contribution of the lattice thermal conductivity over the electronic thermal conductivity. Group $ B^{V} $ (Bi, Sb) elements were much more effective at enhancing the thermoelectric properties of $ Mg_{2} $Si than group $ B^{VI} $(Te, Se) elements.
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container_issue	4
title_short	Synthesis and thermoelectric properties of n-Type $ Mg_{2} $Si
url	https://dx.doi.org/10.3365/eml.2010.12.187
remote_bool	true
author2	Kim, Il-Ho
author2Str	Kim, Il-Ho
ppnlink	656497157
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isOA_txt	false
hochschulschrift_bool	false
doi_str	10.3365/eml.2010.12.187
up_date	2024-07-04T00:15:57.039Z
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Synthesis and thermoelectric properties of n-Type $ Mg_{2} $Si

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