Electrical properties of crystallized $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass
Abstract $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ binary-system glass was prepared, and variations in structural and electrical property were examined using crystallization. While different related research studies exist, few have evaluated the variations in the structure and properties with change...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Gwoo, Donggun [verfasserIn] Kim, Taehee [verfasserIn] Han, Kyungseok [verfasserIn] Choi, Wongyu [verfasserIn] Kim, Jonghwan [verfasserIn] Ryu, Bongki [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2013 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Electronic materials letters - Berlin : Springer, 2009, 9(2013), 3 vom: Mai, Seite 309-313 |
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| Übergeordnetes Werk: |
volume:9 ; year:2013 ; number:3 ; month:05 ; pages:309-313 |
| Links: |
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| DOI / URN: |
10.1007/s13391-013-2199-y |
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| Katalog-ID: |
SPR031556973 |
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| 520 | |a Abstract $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ binary-system glass was prepared, and variations in structural and electrical property were examined using crystallization. While different related research studies exist, few have evaluated the variations in the structure and properties with changes in the crystallization rate. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass was annealed in the graphite mold above the glass transition temperature for 2 h and heat-treated at each crystallization temperature for 3 h. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass showed predominantly electronic conductive characteristic. FTIR was preferentially used for analyzing the structural changes of B-O bond after crystallization, while XRD was utilized to verify the inferred changes in the structure array ($ BO_{3} $ + $ V_{2} %$ O_{5} $ ↔ $ BO_{4} $ + $ 2VO_{2} $). Structural changes induced by heat treatment were confirmed by analyzing the molecular volume determined from the sample density, and conductance was measured to correlate structural and property changes. Conductivity is discussed based on the migration of vanadate ions with different valence states because of the increase in $ VO_{2} $ crystallinity at 130°C, which, however, was not observed at 170°C. After $ VO_{2} $ structures were reinforced, a 1.8-fold increase in conductance was observed (as compared to the annealed sample) after crystallization at 130°C for 3 h. | ||
| 650 | 4 | |a crystallization |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a electrical conductivity |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a vanadium borate glass |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a structures |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Kim, Taehee |e verfasserin |4 aut | |
| 700 | 1 | |a Han, Kyungseok |e verfasserin |4 aut | |
| 700 | 1 | |a Choi, Wongyu |e verfasserin |4 aut | |
| 700 | 1 | |a Kim, Jonghwan |e verfasserin |4 aut | |
| 700 | 1 | |a Ryu, Bongki |e verfasserin |4 aut | |
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| 773 | 1 | 8 | |g volume:9 |g year:2013 |g number:3 |g month:05 |g pages:309-313 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1007/s13391-013-2199-y |z lizenzpflichtig |3 Volltext |
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10.1007/s13391-013-2199-y doi (DE-627)SPR031556973 (SPR)s13391-013-2199-y-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Gwoo, Donggun verfasserin aut Electrical properties of crystallized $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ binary-system glass was prepared, and variations in structural and electrical property were examined using crystallization. While different related research studies exist, few have evaluated the variations in the structure and properties with changes in the crystallization rate. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass was annealed in the graphite mold above the glass transition temperature for 2 h and heat-treated at each crystallization temperature for 3 h. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass showed predominantly electronic conductive characteristic. FTIR was preferentially used for analyzing the structural changes of B-O bond after crystallization, while XRD was utilized to verify the inferred changes in the structure array ($ BO_{3} $ + $ V_{2} %$ O_{5} $ ↔ $ BO_{4} $ + $ 2VO_{2} $). Structural changes induced by heat treatment were confirmed by analyzing the molecular volume determined from the sample density, and conductance was measured to correlate structural and property changes. Conductivity is discussed based on the migration of vanadate ions with different valence states because of the increase in $ VO_{2} $ crystallinity at 130°C, which, however, was not observed at 170°C. After $ VO_{2} $ structures were reinforced, a 1.8-fold increase in conductance was observed (as compared to the annealed sample) after crystallization at 130°C for 3 h. crystallization (dpeaa)DE-He213 electrical conductivity (dpeaa)DE-He213 vanadium borate glass (dpeaa)DE-He213 structures (dpeaa)DE-He213 Kim, Taehee verfasserin aut Han, Kyungseok verfasserin aut Choi, Wongyu verfasserin aut Kim, Jonghwan verfasserin aut Ryu, Bongki verfasserin aut Enthalten in Electronic materials letters Berlin : Springer, 2009 9(2013), 3 vom: Mai, Seite 309-313 (DE-627)656497157 (DE-600)2604508-4 2093-6788 nnns volume:9 year:2013 number:3 month:05 pages:309-313 https://dx.doi.org/10.1007/s13391-013-2199-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 9 2013 3 05 309-313 |
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10.1007/s13391-013-2199-y doi (DE-627)SPR031556973 (SPR)s13391-013-2199-y-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Gwoo, Donggun verfasserin aut Electrical properties of crystallized $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ binary-system glass was prepared, and variations in structural and electrical property were examined using crystallization. While different related research studies exist, few have evaluated the variations in the structure and properties with changes in the crystallization rate. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass was annealed in the graphite mold above the glass transition temperature for 2 h and heat-treated at each crystallization temperature for 3 h. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass showed predominantly electronic conductive characteristic. FTIR was preferentially used for analyzing the structural changes of B-O bond after crystallization, while XRD was utilized to verify the inferred changes in the structure array ($ BO_{3} $ + $ V_{2} %$ O_{5} $ ↔ $ BO_{4} $ + $ 2VO_{2} $). Structural changes induced by heat treatment were confirmed by analyzing the molecular volume determined from the sample density, and conductance was measured to correlate structural and property changes. Conductivity is discussed based on the migration of vanadate ions with different valence states because of the increase in $ VO_{2} $ crystallinity at 130°C, which, however, was not observed at 170°C. After $ VO_{2} $ structures were reinforced, a 1.8-fold increase in conductance was observed (as compared to the annealed sample) after crystallization at 130°C for 3 h. crystallization (dpeaa)DE-He213 electrical conductivity (dpeaa)DE-He213 vanadium borate glass (dpeaa)DE-He213 structures (dpeaa)DE-He213 Kim, Taehee verfasserin aut Han, Kyungseok verfasserin aut Choi, Wongyu verfasserin aut Kim, Jonghwan verfasserin aut Ryu, Bongki verfasserin aut Enthalten in Electronic materials letters Berlin : Springer, 2009 9(2013), 3 vom: Mai, Seite 309-313 (DE-627)656497157 (DE-600)2604508-4 2093-6788 nnns volume:9 year:2013 number:3 month:05 pages:309-313 https://dx.doi.org/10.1007/s13391-013-2199-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 9 2013 3 05 309-313 |
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10.1007/s13391-013-2199-y doi (DE-627)SPR031556973 (SPR)s13391-013-2199-y-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Gwoo, Donggun verfasserin aut Electrical properties of crystallized $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ binary-system glass was prepared, and variations in structural and electrical property were examined using crystallization. While different related research studies exist, few have evaluated the variations in the structure and properties with changes in the crystallization rate. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass was annealed in the graphite mold above the glass transition temperature for 2 h and heat-treated at each crystallization temperature for 3 h. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass showed predominantly electronic conductive characteristic. FTIR was preferentially used for analyzing the structural changes of B-O bond after crystallization, while XRD was utilized to verify the inferred changes in the structure array ($ BO_{3} $ + $ V_{2} %$ O_{5} $ ↔ $ BO_{4} $ + $ 2VO_{2} $). Structural changes induced by heat treatment were confirmed by analyzing the molecular volume determined from the sample density, and conductance was measured to correlate structural and property changes. Conductivity is discussed based on the migration of vanadate ions with different valence states because of the increase in $ VO_{2} $ crystallinity at 130°C, which, however, was not observed at 170°C. After $ VO_{2} $ structures were reinforced, a 1.8-fold increase in conductance was observed (as compared to the annealed sample) after crystallization at 130°C for 3 h. crystallization (dpeaa)DE-He213 electrical conductivity (dpeaa)DE-He213 vanadium borate glass (dpeaa)DE-He213 structures (dpeaa)DE-He213 Kim, Taehee verfasserin aut Han, Kyungseok verfasserin aut Choi, Wongyu verfasserin aut Kim, Jonghwan verfasserin aut Ryu, Bongki verfasserin aut Enthalten in Electronic materials letters Berlin : Springer, 2009 9(2013), 3 vom: Mai, Seite 309-313 (DE-627)656497157 (DE-600)2604508-4 2093-6788 nnns volume:9 year:2013 number:3 month:05 pages:309-313 https://dx.doi.org/10.1007/s13391-013-2199-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 9 2013 3 05 309-313 |
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10.1007/s13391-013-2199-y doi (DE-627)SPR031556973 (SPR)s13391-013-2199-y-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Gwoo, Donggun verfasserin aut Electrical properties of crystallized $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ binary-system glass was prepared, and variations in structural and electrical property were examined using crystallization. While different related research studies exist, few have evaluated the variations in the structure and properties with changes in the crystallization rate. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass was annealed in the graphite mold above the glass transition temperature for 2 h and heat-treated at each crystallization temperature for 3 h. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass showed predominantly electronic conductive characteristic. FTIR was preferentially used for analyzing the structural changes of B-O bond after crystallization, while XRD was utilized to verify the inferred changes in the structure array ($ BO_{3} $ + $ V_{2} %$ O_{5} $ ↔ $ BO_{4} $ + $ 2VO_{2} $). Structural changes induced by heat treatment were confirmed by analyzing the molecular volume determined from the sample density, and conductance was measured to correlate structural and property changes. Conductivity is discussed based on the migration of vanadate ions with different valence states because of the increase in $ VO_{2} $ crystallinity at 130°C, which, however, was not observed at 170°C. After $ VO_{2} $ structures were reinforced, a 1.8-fold increase in conductance was observed (as compared to the annealed sample) after crystallization at 130°C for 3 h. crystallization (dpeaa)DE-He213 electrical conductivity (dpeaa)DE-He213 vanadium borate glass (dpeaa)DE-He213 structures (dpeaa)DE-He213 Kim, Taehee verfasserin aut Han, Kyungseok verfasserin aut Choi, Wongyu verfasserin aut Kim, Jonghwan verfasserin aut Ryu, Bongki verfasserin aut Enthalten in Electronic materials letters Berlin : Springer, 2009 9(2013), 3 vom: Mai, Seite 309-313 (DE-627)656497157 (DE-600)2604508-4 2093-6788 nnns volume:9 year:2013 number:3 month:05 pages:309-313 https://dx.doi.org/10.1007/s13391-013-2199-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 9 2013 3 05 309-313 |
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10.1007/s13391-013-2199-y doi (DE-627)SPR031556973 (SPR)s13391-013-2199-y-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Gwoo, Donggun verfasserin aut Electrical properties of crystallized $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ binary-system glass was prepared, and variations in structural and electrical property were examined using crystallization. While different related research studies exist, few have evaluated the variations in the structure and properties with changes in the crystallization rate. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass was annealed in the graphite mold above the glass transition temperature for 2 h and heat-treated at each crystallization temperature for 3 h. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass showed predominantly electronic conductive characteristic. FTIR was preferentially used for analyzing the structural changes of B-O bond after crystallization, while XRD was utilized to verify the inferred changes in the structure array ($ BO_{3} $ + $ V_{2} %$ O_{5} $ ↔ $ BO_{4} $ + $ 2VO_{2} $). Structural changes induced by heat treatment were confirmed by analyzing the molecular volume determined from the sample density, and conductance was measured to correlate structural and property changes. Conductivity is discussed based on the migration of vanadate ions with different valence states because of the increase in $ VO_{2} $ crystallinity at 130°C, which, however, was not observed at 170°C. After $ VO_{2} $ structures were reinforced, a 1.8-fold increase in conductance was observed (as compared to the annealed sample) after crystallization at 130°C for 3 h. crystallization (dpeaa)DE-He213 electrical conductivity (dpeaa)DE-He213 vanadium borate glass (dpeaa)DE-He213 structures (dpeaa)DE-He213 Kim, Taehee verfasserin aut Han, Kyungseok verfasserin aut Choi, Wongyu verfasserin aut Kim, Jonghwan verfasserin aut Ryu, Bongki verfasserin aut Enthalten in Electronic materials letters Berlin : Springer, 2009 9(2013), 3 vom: Mai, Seite 309-313 (DE-627)656497157 (DE-600)2604508-4 2093-6788 nnns volume:9 year:2013 number:3 month:05 pages:309-313 https://dx.doi.org/10.1007/s13391-013-2199-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 9 2013 3 05 309-313 |
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Enthalten in Electronic materials letters 9(2013), 3 vom: Mai, Seite 309-313 volume:9 year:2013 number:3 month:05 pages:309-313 |
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Gwoo, Donggun @@aut@@ Kim, Taehee @@aut@@ Han, Kyungseok @@aut@@ Choi, Wongyu @@aut@@ Kim, Jonghwan @@aut@@ Ryu, Bongki @@aut@@ |
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While different related research studies exist, few have evaluated the variations in the structure and properties with changes in the crystallization rate. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass was annealed in the graphite mold above the glass transition temperature for 2 h and heat-treated at each crystallization temperature for 3 h. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass showed predominantly electronic conductive characteristic. FTIR was preferentially used for analyzing the structural changes of B-O bond after crystallization, while XRD was utilized to verify the inferred changes in the structure array ($ BO_{3} $ + $ V_{2} %$ O_{5} $ ↔ $ BO_{4} $ + $ 2VO_{2} $). Structural changes induced by heat treatment were confirmed by analyzing the molecular volume determined from the sample density, and conductance was measured to correlate structural and property changes. Conductivity is discussed based on the migration of vanadate ions with different valence states because of the increase in $ VO_{2} $ crystallinity at 130°C, which, however, was not observed at 170°C. 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Gwoo, Donggun |
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electrical properties of crystallized $ 30b_{2} %$ o_{3} $-$ 70v_{2} %$ o_{5} $ glass |
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Electrical properties of crystallized $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass |
| abstract |
Abstract $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ binary-system glass was prepared, and variations in structural and electrical property were examined using crystallization. While different related research studies exist, few have evaluated the variations in the structure and properties with changes in the crystallization rate. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass was annealed in the graphite mold above the glass transition temperature for 2 h and heat-treated at each crystallization temperature for 3 h. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass showed predominantly electronic conductive characteristic. FTIR was preferentially used for analyzing the structural changes of B-O bond after crystallization, while XRD was utilized to verify the inferred changes in the structure array ($ BO_{3} $ + $ V_{2} %$ O_{5} $ ↔ $ BO_{4} $ + $ 2VO_{2} $). Structural changes induced by heat treatment were confirmed by analyzing the molecular volume determined from the sample density, and conductance was measured to correlate structural and property changes. Conductivity is discussed based on the migration of vanadate ions with different valence states because of the increase in $ VO_{2} $ crystallinity at 130°C, which, however, was not observed at 170°C. After $ VO_{2} $ structures were reinforced, a 1.8-fold increase in conductance was observed (as compared to the annealed sample) after crystallization at 130°C for 3 h. |
| abstractGer |
Abstract $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ binary-system glass was prepared, and variations in structural and electrical property were examined using crystallization. While different related research studies exist, few have evaluated the variations in the structure and properties with changes in the crystallization rate. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass was annealed in the graphite mold above the glass transition temperature for 2 h and heat-treated at each crystallization temperature for 3 h. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass showed predominantly electronic conductive characteristic. FTIR was preferentially used for analyzing the structural changes of B-O bond after crystallization, while XRD was utilized to verify the inferred changes in the structure array ($ BO_{3} $ + $ V_{2} %$ O_{5} $ ↔ $ BO_{4} $ + $ 2VO_{2} $). Structural changes induced by heat treatment were confirmed by analyzing the molecular volume determined from the sample density, and conductance was measured to correlate structural and property changes. Conductivity is discussed based on the migration of vanadate ions with different valence states because of the increase in $ VO_{2} $ crystallinity at 130°C, which, however, was not observed at 170°C. After $ VO_{2} $ structures were reinforced, a 1.8-fold increase in conductance was observed (as compared to the annealed sample) after crystallization at 130°C for 3 h. |
| abstract_unstemmed |
Abstract $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ binary-system glass was prepared, and variations in structural and electrical property were examined using crystallization. While different related research studies exist, few have evaluated the variations in the structure and properties with changes in the crystallization rate. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass was annealed in the graphite mold above the glass transition temperature for 2 h and heat-treated at each crystallization temperature for 3 h. $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass showed predominantly electronic conductive characteristic. FTIR was preferentially used for analyzing the structural changes of B-O bond after crystallization, while XRD was utilized to verify the inferred changes in the structure array ($ BO_{3} $ + $ V_{2} %$ O_{5} $ ↔ $ BO_{4} $ + $ 2VO_{2} $). Structural changes induced by heat treatment were confirmed by analyzing the molecular volume determined from the sample density, and conductance was measured to correlate structural and property changes. Conductivity is discussed based on the migration of vanadate ions with different valence states because of the increase in $ VO_{2} $ crystallinity at 130°C, which, however, was not observed at 170°C. After $ VO_{2} $ structures were reinforced, a 1.8-fold increase in conductance was observed (as compared to the annealed sample) after crystallization at 130°C for 3 h. |
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| container_issue |
3 |
| title_short |
Electrical properties of crystallized $ 30B_{2} %$ O_{3} $-$ 70V_{2} %$ O_{5} $ glass |
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https://dx.doi.org/10.1007/s13391-013-2199-y |
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| author2 |
Kim, Taehee Han, Kyungseok Choi, Wongyu Kim, Jonghwan Ryu, Bongki |
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Kim, Taehee Han, Kyungseok Choi, Wongyu Kim, Jonghwan Ryu, Bongki |
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| doi_str |
10.1007/s13391-013-2199-y |
| up_date |
2024-07-04T00:16:39.708Z |
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| score |
7.400302 |