Effects of strontium gallate addition on sintering behavior and electrical conductivity of yttria-doped ceria

Abstract The densification behavior and electrical conductivity of $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with strontium gallate concentrations ranging from 0 to 5 mol. % were investigated. The sintered density was found to increase rapidly for concentrations up to 0.5 mol. % $ Sr_{2} %$ Ga_{2}...
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Autor*in:	Seo, Seung-Woo [verfasserIn] Jung, Sang-Jin [verfasserIn] Park, Min-Woo [verfasserIn] Yu, Seung-Min [verfasserIn] Lee, Ki-Tae [verfasserIn] Lee, Joo-Sin [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2014

Schlagwörter:	yttria-doped ceria Sr Ga O addition sintering electrical conductivity

Übergeordnetes Werk:	Enthalten in: Electronic materials letters - Berlin : Springer, 2009, 10(2014), 1 vom: Jan., Seite 213-216
Übergeordnetes Werk:	volume:10 ; year:2014 ; number:1 ; month:01 ; pages:213-216

Links:	Volltext

DOI / URN:	10.1007/s13391-013-3026-1

Katalog-ID:	SPR031558550

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520			\|a Abstract The densification behavior and electrical conductivity of $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with strontium gallate concentrations ranging from 0 to 5 mol. % were investigated. The sintered density was found to increase rapidly for concentrations up to 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $ and then to decrease upon further $ Sr_{2} %$ Ga_{2} %$ O_{5} $ addition. It was possible to obtain dense $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with 95% of the theoretical density using a 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen sintered at 1250°C for 5 h, whereas pure $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics needed to be sintered at 1550°C in order to obtain an equivalent theoretical density. The electrical conductivity was measured as a function of the dopant content over the temperature range of 450°C–700°C in air. The conductivity of the 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen showed a maximum value of 4.43 × $ 10^{−3} $Ω−1·$ cm^{−1} $ at 700°C. The addition of $ Sr_{2} %$ Ga_{2} %$ O_{5} $ was found to promote the sintering properties and electrical conductivities of $ Y_{2} %$ O_{3} $-doped $ CeO_{2} $.
650		4	\|a yttria-doped ceria \|7 (dpeaa)DE-He213
650		4	\|a Sr \|7 (dpeaa)DE-He213
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650		4	\|a O \|7 (dpeaa)DE-He213
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650		4	\|a electrical conductivity \|7 (dpeaa)DE-He213
700	1		\|a Jung, Sang-Jin \|e verfasserin \|4 aut
700	1		\|a Park, Min-Woo \|e verfasserin \|4 aut
700	1		\|a Yu, Seung-Min \|e verfasserin \|4 aut
700	1		\|a Lee, Ki-Tae \|e verfasserin \|4 aut
700	1		\|a Lee, Joo-Sin \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Electronic materials letters \|d Berlin : Springer, 2009 \|g 10(2014), 1 vom: Jan., Seite 213-216 \|w (DE-627)656497157 \|w (DE-600)2604508-4 \|x 2093-6788 \|7 nnns
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Indexfelder

author_variant	s w s sws s j j sjj m w p mwp s m y smy k t l ktl j s l jsl
matchkey_str	article:20936788:2014----::fetosrnimaltadtoosneigeairneetiacn
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publishDate	2014
allfields	10.1007/s13391-013-3026-1 doi (DE-627)SPR031558550 (SPR)s13391-013-3026-1-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Seo, Seung-Woo verfasserin aut Effects of strontium gallate addition on sintering behavior and electrical conductivity of yttria-doped ceria 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The densification behavior and electrical conductivity of $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with strontium gallate concentrations ranging from 0 to 5 mol. % were investigated. The sintered density was found to increase rapidly for concentrations up to 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $ and then to decrease upon further $ Sr_{2} %$ Ga_{2} %$ O_{5} $ addition. It was possible to obtain dense $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with 95% of the theoretical density using a 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen sintered at 1250°C for 5 h, whereas pure $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics needed to be sintered at 1550°C in order to obtain an equivalent theoretical density. The electrical conductivity was measured as a function of the dopant content over the temperature range of 450°C–700°C in air. The conductivity of the 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen showed a maximum value of 4.43 × $ 10^{−3} $Ω−1·$ cm^{−1} $ at 700°C. The addition of $ Sr_{2} %$ Ga_{2} %$ O_{5} $ was found to promote the sintering properties and electrical conductivities of $ Y_{2} %$ O_{3} $-doped $ CeO_{2} $. yttria-doped ceria (dpeaa)DE-He213 Sr (dpeaa)DE-He213 Ga (dpeaa)DE-He213 O (dpeaa)DE-He213 addition (dpeaa)DE-He213 sintering (dpeaa)DE-He213 electrical conductivity (dpeaa)DE-He213 Jung, Sang-Jin verfasserin aut Park, Min-Woo verfasserin aut Yu, Seung-Min verfasserin aut Lee, Ki-Tae verfasserin aut Lee, Joo-Sin verfasserin aut Enthalten in Electronic materials letters Berlin : Springer, 2009 10(2014), 1 vom: Jan., Seite 213-216 (DE-627)656497157 (DE-600)2604508-4 2093-6788 nnns volume:10 year:2014 number:1 month:01 pages:213-216 https://dx.doi.org/10.1007/s13391-013-3026-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 10 2014 1 01 213-216
spelling	10.1007/s13391-013-3026-1 doi (DE-627)SPR031558550 (SPR)s13391-013-3026-1-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Seo, Seung-Woo verfasserin aut Effects of strontium gallate addition on sintering behavior and electrical conductivity of yttria-doped ceria 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The densification behavior and electrical conductivity of $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with strontium gallate concentrations ranging from 0 to 5 mol. % were investigated. The sintered density was found to increase rapidly for concentrations up to 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $ and then to decrease upon further $ Sr_{2} %$ Ga_{2} %$ O_{5} $ addition. It was possible to obtain dense $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with 95% of the theoretical density using a 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen sintered at 1250°C for 5 h, whereas pure $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics needed to be sintered at 1550°C in order to obtain an equivalent theoretical density. The electrical conductivity was measured as a function of the dopant content over the temperature range of 450°C–700°C in air. The conductivity of the 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen showed a maximum value of 4.43 × $ 10^{−3} $Ω−1·$ cm^{−1} $ at 700°C. The addition of $ Sr_{2} %$ Ga_{2} %$ O_{5} $ was found to promote the sintering properties and electrical conductivities of $ Y_{2} %$ O_{3} $-doped $ CeO_{2} $. yttria-doped ceria (dpeaa)DE-He213 Sr (dpeaa)DE-He213 Ga (dpeaa)DE-He213 O (dpeaa)DE-He213 addition (dpeaa)DE-He213 sintering (dpeaa)DE-He213 electrical conductivity (dpeaa)DE-He213 Jung, Sang-Jin verfasserin aut Park, Min-Woo verfasserin aut Yu, Seung-Min verfasserin aut Lee, Ki-Tae verfasserin aut Lee, Joo-Sin verfasserin aut Enthalten in Electronic materials letters Berlin : Springer, 2009 10(2014), 1 vom: Jan., Seite 213-216 (DE-627)656497157 (DE-600)2604508-4 2093-6788 nnns volume:10 year:2014 number:1 month:01 pages:213-216 https://dx.doi.org/10.1007/s13391-013-3026-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 10 2014 1 01 213-216
allfields_unstemmed	10.1007/s13391-013-3026-1 doi (DE-627)SPR031558550 (SPR)s13391-013-3026-1-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Seo, Seung-Woo verfasserin aut Effects of strontium gallate addition on sintering behavior and electrical conductivity of yttria-doped ceria 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The densification behavior and electrical conductivity of $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with strontium gallate concentrations ranging from 0 to 5 mol. % were investigated. The sintered density was found to increase rapidly for concentrations up to 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $ and then to decrease upon further $ Sr_{2} %$ Ga_{2} %$ O_{5} $ addition. It was possible to obtain dense $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with 95% of the theoretical density using a 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen sintered at 1250°C for 5 h, whereas pure $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics needed to be sintered at 1550°C in order to obtain an equivalent theoretical density. The electrical conductivity was measured as a function of the dopant content over the temperature range of 450°C–700°C in air. The conductivity of the 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen showed a maximum value of 4.43 × $ 10^{−3} $Ω−1·$ cm^{−1} $ at 700°C. The addition of $ Sr_{2} %$ Ga_{2} %$ O_{5} $ was found to promote the sintering properties and electrical conductivities of $ Y_{2} %$ O_{3} $-doped $ CeO_{2} $. yttria-doped ceria (dpeaa)DE-He213 Sr (dpeaa)DE-He213 Ga (dpeaa)DE-He213 O (dpeaa)DE-He213 addition (dpeaa)DE-He213 sintering (dpeaa)DE-He213 electrical conductivity (dpeaa)DE-He213 Jung, Sang-Jin verfasserin aut Park, Min-Woo verfasserin aut Yu, Seung-Min verfasserin aut Lee, Ki-Tae verfasserin aut Lee, Joo-Sin verfasserin aut Enthalten in Electronic materials letters Berlin : Springer, 2009 10(2014), 1 vom: Jan., Seite 213-216 (DE-627)656497157 (DE-600)2604508-4 2093-6788 nnns volume:10 year:2014 number:1 month:01 pages:213-216 https://dx.doi.org/10.1007/s13391-013-3026-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 10 2014 1 01 213-216
allfieldsGer	10.1007/s13391-013-3026-1 doi (DE-627)SPR031558550 (SPR)s13391-013-3026-1-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Seo, Seung-Woo verfasserin aut Effects of strontium gallate addition on sintering behavior and electrical conductivity of yttria-doped ceria 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The densification behavior and electrical conductivity of $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with strontium gallate concentrations ranging from 0 to 5 mol. % were investigated. The sintered density was found to increase rapidly for concentrations up to 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $ and then to decrease upon further $ Sr_{2} %$ Ga_{2} %$ O_{5} $ addition. It was possible to obtain dense $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with 95% of the theoretical density using a 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen sintered at 1250°C for 5 h, whereas pure $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics needed to be sintered at 1550°C in order to obtain an equivalent theoretical density. The electrical conductivity was measured as a function of the dopant content over the temperature range of 450°C–700°C in air. The conductivity of the 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen showed a maximum value of 4.43 × $ 10^{−3} $Ω−1·$ cm^{−1} $ at 700°C. The addition of $ Sr_{2} %$ Ga_{2} %$ O_{5} $ was found to promote the sintering properties and electrical conductivities of $ Y_{2} %$ O_{3} $-doped $ CeO_{2} $. yttria-doped ceria (dpeaa)DE-He213 Sr (dpeaa)DE-He213 Ga (dpeaa)DE-He213 O (dpeaa)DE-He213 addition (dpeaa)DE-He213 sintering (dpeaa)DE-He213 electrical conductivity (dpeaa)DE-He213 Jung, Sang-Jin verfasserin aut Park, Min-Woo verfasserin aut Yu, Seung-Min verfasserin aut Lee, Ki-Tae verfasserin aut Lee, Joo-Sin verfasserin aut Enthalten in Electronic materials letters Berlin : Springer, 2009 10(2014), 1 vom: Jan., Seite 213-216 (DE-627)656497157 (DE-600)2604508-4 2093-6788 nnns volume:10 year:2014 number:1 month:01 pages:213-216 https://dx.doi.org/10.1007/s13391-013-3026-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 10 2014 1 01 213-216
allfieldsSound	10.1007/s13391-013-3026-1 doi (DE-627)SPR031558550 (SPR)s13391-013-3026-1-e DE-627 ger DE-627 rakwb eng 620 660 670 ASE Seo, Seung-Woo verfasserin aut Effects of strontium gallate addition on sintering behavior and electrical conductivity of yttria-doped ceria 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The densification behavior and electrical conductivity of $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with strontium gallate concentrations ranging from 0 to 5 mol. % were investigated. The sintered density was found to increase rapidly for concentrations up to 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $ and then to decrease upon further $ Sr_{2} %$ Ga_{2} %$ O_{5} $ addition. It was possible to obtain dense $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with 95% of the theoretical density using a 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen sintered at 1250°C for 5 h, whereas pure $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics needed to be sintered at 1550°C in order to obtain an equivalent theoretical density. The electrical conductivity was measured as a function of the dopant content over the temperature range of 450°C–700°C in air. The conductivity of the 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen showed a maximum value of 4.43 × $ 10^{−3} $Ω−1·$ cm^{−1} $ at 700°C. The addition of $ Sr_{2} %$ Ga_{2} %$ O_{5} $ was found to promote the sintering properties and electrical conductivities of $ Y_{2} %$ O_{3} $-doped $ CeO_{2} $. yttria-doped ceria (dpeaa)DE-He213 Sr (dpeaa)DE-He213 Ga (dpeaa)DE-He213 O (dpeaa)DE-He213 addition (dpeaa)DE-He213 sintering (dpeaa)DE-He213 electrical conductivity (dpeaa)DE-He213 Jung, Sang-Jin verfasserin aut Park, Min-Woo verfasserin aut Yu, Seung-Min verfasserin aut Lee, Ki-Tae verfasserin aut Lee, Joo-Sin verfasserin aut Enthalten in Electronic materials letters Berlin : Springer, 2009 10(2014), 1 vom: Jan., Seite 213-216 (DE-627)656497157 (DE-600)2604508-4 2093-6788 nnns volume:10 year:2014 number:1 month:01 pages:213-216 https://dx.doi.org/10.1007/s13391-013-3026-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 10 2014 1 01 213-216
language	English
source	Enthalten in Electronic materials letters 10(2014), 1 vom: Jan., Seite 213-216 volume:10 year:2014 number:1 month:01 pages:213-216
sourceStr	Enthalten in Electronic materials letters 10(2014), 1 vom: Jan., Seite 213-216 volume:10 year:2014 number:1 month:01 pages:213-216
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	yttria-doped ceria Sr Ga O addition sintering electrical conductivity
dewey-raw	620
isfreeaccess_bool	false
container_title	Electronic materials letters
authorswithroles_txt_mv	Seo, Seung-Woo @@aut@@ Jung, Sang-Jin @@aut@@ Park, Min-Woo @@aut@@ Yu, Seung-Min @@aut@@ Lee, Ki-Tae @@aut@@ Lee, Joo-Sin @@aut@@
publishDateDaySort_date	2014-01-01T00:00:00Z
hierarchy_top_id	656497157
dewey-sort	3620
id	SPR031558550
language_de	englisch
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author	Seo, Seung-Woo
spellingShingle	Seo, Seung-Woo ddc 620 misc yttria-doped ceria misc Sr misc Ga misc O misc addition misc sintering misc electrical conductivity Effects of strontium gallate addition on sintering behavior and electrical conductivity of yttria-doped ceria
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topic_title	620 660 670 ASE Effects of strontium gallate addition on sintering behavior and electrical conductivity of yttria-doped ceria yttria-doped ceria (dpeaa)DE-He213 Sr (dpeaa)DE-He213 Ga (dpeaa)DE-He213 O (dpeaa)DE-He213 addition (dpeaa)DE-He213 sintering (dpeaa)DE-He213 electrical conductivity (dpeaa)DE-He213
topic	ddc 620 misc yttria-doped ceria misc Sr misc Ga misc O misc addition misc sintering misc electrical conductivity
topic_unstemmed	ddc 620 misc yttria-doped ceria misc Sr misc Ga misc O misc addition misc sintering misc electrical conductivity
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title	Effects of strontium gallate addition on sintering behavior and electrical conductivity of yttria-doped ceria
ctrlnum	(DE-627)SPR031558550 (SPR)s13391-013-3026-1-e
title_full	Effects of strontium gallate addition on sintering behavior and electrical conductivity of yttria-doped ceria
author_sort	Seo, Seung-Woo
journal	Electronic materials letters
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author_browse	Seo, Seung-Woo Jung, Sang-Jin Park, Min-Woo Yu, Seung-Min Lee, Ki-Tae Lee, Joo-Sin
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author-letter	Seo, Seung-Woo
doi_str_mv	10.1007/s13391-013-3026-1
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title_sort	effects of strontium gallate addition on sintering behavior and electrical conductivity of yttria-doped ceria
title_auth	Effects of strontium gallate addition on sintering behavior and electrical conductivity of yttria-doped ceria
abstract	Abstract The densification behavior and electrical conductivity of $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with strontium gallate concentrations ranging from 0 to 5 mol. % were investigated. The sintered density was found to increase rapidly for concentrations up to 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $ and then to decrease upon further $ Sr_{2} %$ Ga_{2} %$ O_{5} $ addition. It was possible to obtain dense $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with 95% of the theoretical density using a 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen sintered at 1250°C for 5 h, whereas pure $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics needed to be sintered at 1550°C in order to obtain an equivalent theoretical density. The electrical conductivity was measured as a function of the dopant content over the temperature range of 450°C–700°C in air. The conductivity of the 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen showed a maximum value of 4.43 × $ 10^{−3} $Ω−1·$ cm^{−1} $ at 700°C. The addition of $ Sr_{2} %$ Ga_{2} %$ O_{5} $ was found to promote the sintering properties and electrical conductivities of $ Y_{2} %$ O_{3} $-doped $ CeO_{2} $.
abstractGer	Abstract The densification behavior and electrical conductivity of $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with strontium gallate concentrations ranging from 0 to 5 mol. % were investigated. The sintered density was found to increase rapidly for concentrations up to 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $ and then to decrease upon further $ Sr_{2} %$ Ga_{2} %$ O_{5} $ addition. It was possible to obtain dense $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with 95% of the theoretical density using a 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen sintered at 1250°C for 5 h, whereas pure $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics needed to be sintered at 1550°C in order to obtain an equivalent theoretical density. The electrical conductivity was measured as a function of the dopant content over the temperature range of 450°C–700°C in air. The conductivity of the 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen showed a maximum value of 4.43 × $ 10^{−3} $Ω−1·$ cm^{−1} $ at 700°C. The addition of $ Sr_{2} %$ Ga_{2} %$ O_{5} $ was found to promote the sintering properties and electrical conductivities of $ Y_{2} %$ O_{3} $-doped $ CeO_{2} $.
abstract_unstemmed	Abstract The densification behavior and electrical conductivity of $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with strontium gallate concentrations ranging from 0 to 5 mol. % were investigated. The sintered density was found to increase rapidly for concentrations up to 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $ and then to decrease upon further $ Sr_{2} %$ Ga_{2} %$ O_{5} $ addition. It was possible to obtain dense $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics with 95% of the theoretical density using a 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen sintered at 1250°C for 5 h, whereas pure $ Ce_{0.8} %$ Y_{0.2} %$ O_{1.9} $ ceramics needed to be sintered at 1550°C in order to obtain an equivalent theoretical density. The electrical conductivity was measured as a function of the dopant content over the temperature range of 450°C–700°C in air. The conductivity of the 0.5 mol. % $ Sr_{2} %$ Ga_{2} %$ O_{5} $-added specimen showed a maximum value of 4.43 × $ 10^{−3} $Ω−1·$ cm^{−1} $ at 700°C. The addition of $ Sr_{2} %$ Ga_{2} %$ O_{5} $ was found to promote the sintering properties and electrical conductivities of $ Y_{2} %$ O_{3} $-doped $ CeO_{2} $.
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container_issue	1
title_short	Effects of strontium gallate addition on sintering behavior and electrical conductivity of yttria-doped ceria
url	https://dx.doi.org/10.1007/s13391-013-3026-1
remote_bool	true
author2	Jung, Sang-Jin Park, Min-Woo Yu, Seung-Min Lee, Ki-Tae Lee, Joo-Sin
author2Str	Jung, Sang-Jin Park, Min-Woo Yu, Seung-Min Lee, Ki-Tae Lee, Joo-Sin
ppnlink	656497157
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doi_str	10.1007/s13391-013-3026-1
up_date	2024-07-04T00:17:06.506Z
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Effects of strontium gallate addition on sintering behavior and electrical conductivity of yttria-doped ceria

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