Fast Growth of Highly Ordered $ TiO_{2} $ Nanotube Arrays on Si Substrate under High-Field Anodization

Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate possess broad applications due to its high surface-to-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field (90–180 V) ano...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Song, Jingnan [verfasserIn] Zheng, Maojun Zhang, Bin Li, Qiang Wang, Faze Ma, Liguo Li, Yanbo Zhu, Changqing Ma, Li Shen, Wenzhong

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2016

Schlagwörter:	TiO nanotube arrays Si substrate Anodization High field Controllable preparation

Anmerkung:	© The Author(s) 2016

Übergeordnetes Werk:	Enthalten in: Nano-Micro letters - Berlin : Springer, 2009, 9(2016), 2 vom: 09. Nov.
Übergeordnetes Werk:	volume:9 ; year:2016 ; number:2 ; day:09 ; month:11

Links:	Volltext

DOI / URN:	10.1007/s40820-016-0114-4

Katalog-ID:	SPR03787778X

Internformat


LEADER	01000caa a22002652 4500
001	SPR03787778X
003	DE-627
005	20230328210910.0
007	cr uuu---uuuuu
008	201007s2016 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1007/s40820-016-0114-4 \|2 doi
035			\|a (DE-627)SPR03787778X
035			\|a (SPR)s40820-016-0114-4-e
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
100	1		\|a Song, Jingnan \|e verfasserin \|4 aut
245	1	0	\|a Fast Growth of Highly Ordered $ TiO_{2} $ Nanotube Arrays on Si Substrate under High-Field Anodization
264		1	\|c 2016
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
500			\|a © The Author(s) 2016
520			\|a Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate possess broad applications due to its high surface-to-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field (90–180 V) anodization method to grow highly ordered $ TiO_{2} $ NTAs on Si substrate, and investigate the effect of anodization time, voltage, and fluoride content on the formation of $ TiO_{2} $ NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of $ TiO_{2} $ NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields (40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte. Graphical Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate have been fabricated by high-field anodization method. A high voltage (90–180 V) leads to a high growth rate of $ TiO_{2} $ NTAs (35–47 nm $ s^{−1} $), which is nearly 8 times faster than the growth rate under low fields (40–60 V). Furthermore, the current density–time curves recorded during the anodization provide a facial method to determine the optimal anodization parameters, leading to an easy obtaining of the desired nanotubes.
650		4	\|a TiO \|7 (dpeaa)DE-He213
650		4	\|a nanotube arrays \|7 (dpeaa)DE-He213
650		4	\|a Si substrate \|7 (dpeaa)DE-He213
650		4	\|a Anodization \|7 (dpeaa)DE-He213
650		4	\|a High field \|7 (dpeaa)DE-He213
650		4	\|a Controllable preparation \|7 (dpeaa)DE-He213
700	1		\|a Zheng, Maojun \|4 aut
700	1		\|a Zhang, Bin \|4 aut
700	1		\|a Li, Qiang \|4 aut
700	1		\|a Wang, Faze \|4 aut
700	1		\|a Ma, Liguo \|4 aut
700	1		\|a Li, Yanbo \|4 aut
700	1		\|a Zhu, Changqing \|4 aut
700	1		\|a Ma, Li \|4 aut
700	1		\|a Shen, Wenzhong \|4 aut
773	0	8	\|i Enthalten in \|t Nano-Micro letters \|d Berlin : Springer, 2009 \|g 9(2016), 2 vom: 09. Nov. \|w (DE-627)680319581 \|w (DE-600)2642093-4 \|x 2150-5551 \|7 nnns
773	1	8	\|g volume:9 \|g year:2016 \|g number:2 \|g day:09 \|g month:11
856	4	0	\|u https://dx.doi.org/10.1007/s40820-016-0114-4 \|z kostenfrei \|3 Volltext
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_SPRINGER
912			\|a GBV_ILN_11
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_95
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_151
912			\|a GBV_ILN_161
912			\|a GBV_ILN_206
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 9 \|j 2016 \|e 2 \|b 09 \|c 11

Indexfelder

author_variant	j s js m z mz b z bz q l ql f w fw l m lm y l yl c z cz l m lm w s ws
matchkey_str	article:21505551:2016----::atrwhfihyreeto2aouerasniusrtud
hierarchy_sort_str	2016
publishDate	2016
allfields	10.1007/s40820-016-0114-4 doi (DE-627)SPR03787778X (SPR)s40820-016-0114-4-e DE-627 ger DE-627 rakwb eng Song, Jingnan verfasserin aut Fast Growth of Highly Ordered $ TiO_{2} $ Nanotube Arrays on Si Substrate under High-Field Anodization 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2016 Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate possess broad applications due to its high surface-to-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field (90–180 V) anodization method to grow highly ordered $ TiO_{2} $ NTAs on Si substrate, and investigate the effect of anodization time, voltage, and fluoride content on the formation of $ TiO_{2} $ NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of $ TiO_{2} $ NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields (40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte. Graphical Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate have been fabricated by high-field anodization method. A high voltage (90–180 V) leads to a high growth rate of $ TiO_{2} $ NTAs (35–47 nm $ s^{−1} $), which is nearly 8 times faster than the growth rate under low fields (40–60 V). Furthermore, the current density–time curves recorded during the anodization provide a facial method to determine the optimal anodization parameters, leading to an easy obtaining of the desired nanotubes. TiO (dpeaa)DE-He213 nanotube arrays (dpeaa)DE-He213 Si substrate (dpeaa)DE-He213 Anodization (dpeaa)DE-He213 High field (dpeaa)DE-He213 Controllable preparation (dpeaa)DE-He213 Zheng, Maojun aut Zhang, Bin aut Li, Qiang aut Wang, Faze aut Ma, Liguo aut Li, Yanbo aut Zhu, Changqing aut Ma, Li aut Shen, Wenzhong aut Enthalten in Nano-Micro letters Berlin : Springer, 2009 9(2016), 2 vom: 09. Nov. (DE-627)680319581 (DE-600)2642093-4 2150-5551 nnns volume:9 year:2016 number:2 day:09 month:11 https://dx.doi.org/10.1007/s40820-016-0114-4 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2016 2 09 11
spelling	10.1007/s40820-016-0114-4 doi (DE-627)SPR03787778X (SPR)s40820-016-0114-4-e DE-627 ger DE-627 rakwb eng Song, Jingnan verfasserin aut Fast Growth of Highly Ordered $ TiO_{2} $ Nanotube Arrays on Si Substrate under High-Field Anodization 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2016 Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate possess broad applications due to its high surface-to-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field (90–180 V) anodization method to grow highly ordered $ TiO_{2} $ NTAs on Si substrate, and investigate the effect of anodization time, voltage, and fluoride content on the formation of $ TiO_{2} $ NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of $ TiO_{2} $ NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields (40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte. Graphical Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate have been fabricated by high-field anodization method. A high voltage (90–180 V) leads to a high growth rate of $ TiO_{2} $ NTAs (35–47 nm $ s^{−1} $), which is nearly 8 times faster than the growth rate under low fields (40–60 V). Furthermore, the current density–time curves recorded during the anodization provide a facial method to determine the optimal anodization parameters, leading to an easy obtaining of the desired nanotubes. TiO (dpeaa)DE-He213 nanotube arrays (dpeaa)DE-He213 Si substrate (dpeaa)DE-He213 Anodization (dpeaa)DE-He213 High field (dpeaa)DE-He213 Controllable preparation (dpeaa)DE-He213 Zheng, Maojun aut Zhang, Bin aut Li, Qiang aut Wang, Faze aut Ma, Liguo aut Li, Yanbo aut Zhu, Changqing aut Ma, Li aut Shen, Wenzhong aut Enthalten in Nano-Micro letters Berlin : Springer, 2009 9(2016), 2 vom: 09. Nov. (DE-627)680319581 (DE-600)2642093-4 2150-5551 nnns volume:9 year:2016 number:2 day:09 month:11 https://dx.doi.org/10.1007/s40820-016-0114-4 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2016 2 09 11
allfields_unstemmed	10.1007/s40820-016-0114-4 doi (DE-627)SPR03787778X (SPR)s40820-016-0114-4-e DE-627 ger DE-627 rakwb eng Song, Jingnan verfasserin aut Fast Growth of Highly Ordered $ TiO_{2} $ Nanotube Arrays on Si Substrate under High-Field Anodization 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2016 Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate possess broad applications due to its high surface-to-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field (90–180 V) anodization method to grow highly ordered $ TiO_{2} $ NTAs on Si substrate, and investigate the effect of anodization time, voltage, and fluoride content on the formation of $ TiO_{2} $ NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of $ TiO_{2} $ NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields (40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte. Graphical Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate have been fabricated by high-field anodization method. A high voltage (90–180 V) leads to a high growth rate of $ TiO_{2} $ NTAs (35–47 nm $ s^{−1} $), which is nearly 8 times faster than the growth rate under low fields (40–60 V). Furthermore, the current density–time curves recorded during the anodization provide a facial method to determine the optimal anodization parameters, leading to an easy obtaining of the desired nanotubes. TiO (dpeaa)DE-He213 nanotube arrays (dpeaa)DE-He213 Si substrate (dpeaa)DE-He213 Anodization (dpeaa)DE-He213 High field (dpeaa)DE-He213 Controllable preparation (dpeaa)DE-He213 Zheng, Maojun aut Zhang, Bin aut Li, Qiang aut Wang, Faze aut Ma, Liguo aut Li, Yanbo aut Zhu, Changqing aut Ma, Li aut Shen, Wenzhong aut Enthalten in Nano-Micro letters Berlin : Springer, 2009 9(2016), 2 vom: 09. Nov. (DE-627)680319581 (DE-600)2642093-4 2150-5551 nnns volume:9 year:2016 number:2 day:09 month:11 https://dx.doi.org/10.1007/s40820-016-0114-4 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2016 2 09 11
allfieldsGer	10.1007/s40820-016-0114-4 doi (DE-627)SPR03787778X (SPR)s40820-016-0114-4-e DE-627 ger DE-627 rakwb eng Song, Jingnan verfasserin aut Fast Growth of Highly Ordered $ TiO_{2} $ Nanotube Arrays on Si Substrate under High-Field Anodization 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2016 Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate possess broad applications due to its high surface-to-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field (90–180 V) anodization method to grow highly ordered $ TiO_{2} $ NTAs on Si substrate, and investigate the effect of anodization time, voltage, and fluoride content on the formation of $ TiO_{2} $ NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of $ TiO_{2} $ NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields (40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte. Graphical Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate have been fabricated by high-field anodization method. A high voltage (90–180 V) leads to a high growth rate of $ TiO_{2} $ NTAs (35–47 nm $ s^{−1} $), which is nearly 8 times faster than the growth rate under low fields (40–60 V). Furthermore, the current density–time curves recorded during the anodization provide a facial method to determine the optimal anodization parameters, leading to an easy obtaining of the desired nanotubes. TiO (dpeaa)DE-He213 nanotube arrays (dpeaa)DE-He213 Si substrate (dpeaa)DE-He213 Anodization (dpeaa)DE-He213 High field (dpeaa)DE-He213 Controllable preparation (dpeaa)DE-He213 Zheng, Maojun aut Zhang, Bin aut Li, Qiang aut Wang, Faze aut Ma, Liguo aut Li, Yanbo aut Zhu, Changqing aut Ma, Li aut Shen, Wenzhong aut Enthalten in Nano-Micro letters Berlin : Springer, 2009 9(2016), 2 vom: 09. Nov. (DE-627)680319581 (DE-600)2642093-4 2150-5551 nnns volume:9 year:2016 number:2 day:09 month:11 https://dx.doi.org/10.1007/s40820-016-0114-4 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2016 2 09 11
allfieldsSound	10.1007/s40820-016-0114-4 doi (DE-627)SPR03787778X (SPR)s40820-016-0114-4-e DE-627 ger DE-627 rakwb eng Song, Jingnan verfasserin aut Fast Growth of Highly Ordered $ TiO_{2} $ Nanotube Arrays on Si Substrate under High-Field Anodization 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2016 Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate possess broad applications due to its high surface-to-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field (90–180 V) anodization method to grow highly ordered $ TiO_{2} $ NTAs on Si substrate, and investigate the effect of anodization time, voltage, and fluoride content on the formation of $ TiO_{2} $ NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of $ TiO_{2} $ NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields (40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte. Graphical Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate have been fabricated by high-field anodization method. A high voltage (90–180 V) leads to a high growth rate of $ TiO_{2} $ NTAs (35–47 nm $ s^{−1} $), which is nearly 8 times faster than the growth rate under low fields (40–60 V). Furthermore, the current density–time curves recorded during the anodization provide a facial method to determine the optimal anodization parameters, leading to an easy obtaining of the desired nanotubes. TiO (dpeaa)DE-He213 nanotube arrays (dpeaa)DE-He213 Si substrate (dpeaa)DE-He213 Anodization (dpeaa)DE-He213 High field (dpeaa)DE-He213 Controllable preparation (dpeaa)DE-He213 Zheng, Maojun aut Zhang, Bin aut Li, Qiang aut Wang, Faze aut Ma, Liguo aut Li, Yanbo aut Zhu, Changqing aut Ma, Li aut Shen, Wenzhong aut Enthalten in Nano-Micro letters Berlin : Springer, 2009 9(2016), 2 vom: 09. Nov. (DE-627)680319581 (DE-600)2642093-4 2150-5551 nnns volume:9 year:2016 number:2 day:09 month:11 https://dx.doi.org/10.1007/s40820-016-0114-4 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2016 2 09 11
language	English
source	Enthalten in Nano-Micro letters 9(2016), 2 vom: 09. Nov. volume:9 year:2016 number:2 day:09 month:11
sourceStr	Enthalten in Nano-Micro letters 9(2016), 2 vom: 09. Nov. volume:9 year:2016 number:2 day:09 month:11
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	TiO nanotube arrays Si substrate Anodization High field Controllable preparation
isfreeaccess_bool	true
container_title	Nano-Micro letters
authorswithroles_txt_mv	Song, Jingnan @@aut@@ Zheng, Maojun @@aut@@ Zhang, Bin @@aut@@ Li, Qiang @@aut@@ Wang, Faze @@aut@@ Ma, Liguo @@aut@@ Li, Yanbo @@aut@@ Zhu, Changqing @@aut@@ Ma, Li @@aut@@ Shen, Wenzhong @@aut@@
publishDateDaySort_date	2016-11-09T00:00:00Z
hierarchy_top_id	680319581
id	SPR03787778X
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR03787778X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230328210910.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201007s2016 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s40820-016-0114-4</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR03787778X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s40820-016-0114-4-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Song, Jingnan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Fast Growth of Highly Ordered $ TiO_{2} $ Nanotube Arrays on Si Substrate under High-Field Anodization</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Author(s) 2016</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate possess broad applications due to its high surface-to-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field (90–180 V) anodization method to grow highly ordered $ TiO_{2} $ NTAs on Si substrate, and investigate the effect of anodization time, voltage, and fluoride content on the formation of $ TiO_{2} $ NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of $ TiO_{2} $ NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields (40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte. Graphical Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate have been fabricated by high-field anodization method. A high voltage (90–180 V) leads to a high growth rate of $ TiO_{2} $ NTAs (35–47 nm $ s^{−1} $), which is nearly 8 times faster than the growth rate under low fields (40–60 V). Furthermore, the current density–time curves recorded during the anodization provide a facial method to determine the optimal anodization parameters, leading to an easy obtaining of the desired nanotubes.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">TiO</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">nanotube arrays</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Si substrate</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Anodization</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">High field</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Controllable preparation</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zheng, Maojun</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, Bin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Qiang</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Faze</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ma, Liguo</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Yanbo</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhu, Changqing</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ma, Li</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shen, Wenzhong</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Nano-Micro letters</subfield><subfield code="d">Berlin : Springer, 2009</subfield><subfield code="g">9(2016), 2 vom: 09. Nov.</subfield><subfield code="w">(DE-627)680319581</subfield><subfield code="w">(DE-600)2642093-4</subfield><subfield code="x">2150-5551</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:9</subfield><subfield code="g">year:2016</subfield><subfield code="g">number:2</subfield><subfield code="g">day:09</subfield><subfield code="g">month:11</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1007/s40820-016-0114-4</subfield><subfield code="z">kostenfrei</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_206</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">9</subfield><subfield code="j">2016</subfield><subfield code="e">2</subfield><subfield code="b">09</subfield><subfield code="c">11</subfield></datafield></record></collection>
author	Song, Jingnan
spellingShingle	Song, Jingnan misc TiO misc nanotube arrays misc Si substrate misc Anodization misc High field misc Controllable preparation Fast Growth of Highly Ordered $ TiO_{2} $ Nanotube Arrays on Si Substrate under High-Field Anodization
authorStr	Song, Jingnan
ppnlink_with_tag_str_mv	@@773@@(DE-627)680319581
format	electronic Article
delete_txt_mv	keep
author_role	aut aut aut aut aut aut aut aut aut aut
collection	springer
remote_str	true
illustrated	Not Illustrated
issn	2150-5551
topic_title	Fast Growth of Highly Ordered $ TiO_{2} $ Nanotube Arrays on Si Substrate under High-Field Anodization TiO (dpeaa)DE-He213 nanotube arrays (dpeaa)DE-He213 Si substrate (dpeaa)DE-He213 Anodization (dpeaa)DE-He213 High field (dpeaa)DE-He213 Controllable preparation (dpeaa)DE-He213
topic	misc TiO misc nanotube arrays misc Si substrate misc Anodization misc High field misc Controllable preparation
topic_unstemmed	misc TiO misc nanotube arrays misc Si substrate misc Anodization misc High field misc Controllable preparation
topic_browse	misc TiO misc nanotube arrays misc Si substrate misc Anodization misc High field misc Controllable preparation
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Nano-Micro letters
hierarchy_parent_id	680319581
hierarchy_top_title	Nano-Micro letters
isfreeaccess_txt	true
familylinks_str_mv	(DE-627)680319581 (DE-600)2642093-4
title	Fast Growth of Highly Ordered $ TiO_{2} $ Nanotube Arrays on Si Substrate under High-Field Anodization
ctrlnum	(DE-627)SPR03787778X (SPR)s40820-016-0114-4-e
title_full	Fast Growth of Highly Ordered $ TiO_{2} $ Nanotube Arrays on Si Substrate under High-Field Anodization
author_sort	Song, Jingnan
journal	Nano-Micro letters
journalStr	Nano-Micro letters
lang_code	eng
isOA_bool	true
recordtype	marc
publishDateSort	2016
contenttype_str_mv	txt
author_browse	Song, Jingnan Zheng, Maojun Zhang, Bin Li, Qiang Wang, Faze Ma, Liguo Li, Yanbo Zhu, Changqing Ma, Li Shen, Wenzhong
container_volume	9
format_se	Elektronische Aufsätze
author-letter	Song, Jingnan
doi_str_mv	10.1007/s40820-016-0114-4
title_sort	fast growth of highly ordered $ tio_{2} $ nanotube arrays on si substrate under high-field anodization
title_auth	Fast Growth of Highly Ordered $ TiO_{2} $ Nanotube Arrays on Si Substrate under High-Field Anodization
abstract	Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate possess broad applications due to its high surface-to-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field (90–180 V) anodization method to grow highly ordered $ TiO_{2} $ NTAs on Si substrate, and investigate the effect of anodization time, voltage, and fluoride content on the formation of $ TiO_{2} $ NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of $ TiO_{2} $ NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields (40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte. Graphical Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate have been fabricated by high-field anodization method. A high voltage (90–180 V) leads to a high growth rate of $ TiO_{2} $ NTAs (35–47 nm $ s^{−1} $), which is nearly 8 times faster than the growth rate under low fields (40–60 V). Furthermore, the current density–time curves recorded during the anodization provide a facial method to determine the optimal anodization parameters, leading to an easy obtaining of the desired nanotubes. © The Author(s) 2016
abstractGer	Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate possess broad applications due to its high surface-to-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field (90–180 V) anodization method to grow highly ordered $ TiO_{2} $ NTAs on Si substrate, and investigate the effect of anodization time, voltage, and fluoride content on the formation of $ TiO_{2} $ NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of $ TiO_{2} $ NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields (40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte. Graphical Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate have been fabricated by high-field anodization method. A high voltage (90–180 V) leads to a high growth rate of $ TiO_{2} $ NTAs (35–47 nm $ s^{−1} $), which is nearly 8 times faster than the growth rate under low fields (40–60 V). Furthermore, the current density–time curves recorded during the anodization provide a facial method to determine the optimal anodization parameters, leading to an easy obtaining of the desired nanotubes. © The Author(s) 2016
abstract_unstemmed	Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate possess broad applications due to its high surface-to-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field (90–180 V) anodization method to grow highly ordered $ TiO_{2} $ NTAs on Si substrate, and investigate the effect of anodization time, voltage, and fluoride content on the formation of $ TiO_{2} $ NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of $ TiO_{2} $ NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields (40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte. Graphical Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate have been fabricated by high-field anodization method. A high voltage (90–180 V) leads to a high growth rate of $ TiO_{2} $ NTAs (35–47 nm $ s^{−1} $), which is nearly 8 times faster than the growth rate under low fields (40–60 V). Furthermore, the current density–time curves recorded during the anodization provide a facial method to determine the optimal anodization parameters, leading to an easy obtaining of the desired nanotubes. © The Author(s) 2016
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700
container_issue	2
title_short	Fast Growth of Highly Ordered $ TiO_{2} $ Nanotube Arrays on Si Substrate under High-Field Anodization
url	https://dx.doi.org/10.1007/s40820-016-0114-4
remote_bool	true
author2	Zheng, Maojun Zhang, Bin Li, Qiang Wang, Faze Ma, Liguo Li, Yanbo Zhu, Changqing Ma, Li Shen, Wenzhong
author2Str	Zheng, Maojun Zhang, Bin Li, Qiang Wang, Faze Ma, Liguo Li, Yanbo Zhu, Changqing Ma, Li Shen, Wenzhong
ppnlink	680319581
mediatype_str_mv	c
isOA_txt	true
hochschulschrift_bool	false
doi_str	10.1007/s40820-016-0114-4
up_date	2024-07-03T14:53:23.906Z
_version_	1803570017897283584
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR03787778X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230328210910.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201007s2016 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s40820-016-0114-4</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR03787778X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s40820-016-0114-4-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Song, Jingnan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Fast Growth of Highly Ordered $ TiO_{2} $ Nanotube Arrays on Si Substrate under High-Field Anodization</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Author(s) 2016</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate possess broad applications due to its high surface-to-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field (90–180 V) anodization method to grow highly ordered $ TiO_{2} $ NTAs on Si substrate, and investigate the effect of anodization time, voltage, and fluoride content on the formation of $ TiO_{2} $ NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of $ TiO_{2} $ NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields (40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte. Graphical Abstract Highly ordered $ TiO_{2} $ nanotube arrays (NTAs) on Si substrate have been fabricated by high-field anodization method. A high voltage (90–180 V) leads to a high growth rate of $ TiO_{2} $ NTAs (35–47 nm $ s^{−1} $), which is nearly 8 times faster than the growth rate under low fields (40–60 V). Furthermore, the current density–time curves recorded during the anodization provide a facial method to determine the optimal anodization parameters, leading to an easy obtaining of the desired nanotubes.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">TiO</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">nanotube arrays</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Si substrate</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Anodization</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">High field</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Controllable preparation</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zheng, Maojun</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, Bin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Qiang</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Faze</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ma, Liguo</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Yanbo</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhu, Changqing</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ma, Li</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shen, Wenzhong</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Nano-Micro letters</subfield><subfield code="d">Berlin : Springer, 2009</subfield><subfield code="g">9(2016), 2 vom: 09. Nov.</subfield><subfield code="w">(DE-627)680319581</subfield><subfield code="w">(DE-600)2642093-4</subfield><subfield code="x">2150-5551</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:9</subfield><subfield code="g">year:2016</subfield><subfield code="g">number:2</subfield><subfield code="g">day:09</subfield><subfield code="g">month:11</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1007/s40820-016-0114-4</subfield><subfield code="z">kostenfrei</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_206</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">9</subfield><subfield code="j">2016</subfield><subfield code="e">2</subfield><subfield code="b">09</subfield><subfield code="c">11</subfield></datafield></record></collection>
score	7.402935

Nicht das Richtige dabei?

Schreiben Sie uns!

Fast Growth of Highly Ordered $ TiO_{2} $ Nanotube Arrays on Si Substrate under High-Field Anodization

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?