Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range

Background In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field. Methods Several single-crystal wafer samp...
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Autor*in:	Chochol, Jan [verfasserIn] Postava, Kamil Čada, Michael Vanwolleghem, Mathias Mičica, Martin Halagačka, Lukáš Lampin, Jean-François Pištora, Jaromír

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2017

Schlagwörter:	Surface plasmons Semiconductor materials Magneto-optical materials THz-TDS FTIR

Anmerkung:	© The Author(s) 2017

Übergeordnetes Werk:	Enthalten in: Journal of the European Optical Society - London, 2006, 13(2017), 1 vom: 01. Mai
Übergeordnetes Werk:	volume:13 ; year:2017 ; number:1 ; day:01 ; month:05

Links:	Volltext

DOI / URN:	10.1186/s41476-017-0044-x

Katalog-ID:	SPR038228122

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520			\|a Background In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field. Methods Several single-crystal wafer samples (n,p-doped GaAs, n-doped InP, and n,p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy. Results The optical parameters of III-V semiconductors are presented. Moreover, strong magnetic modulation of permittivity was demonstrated on the undoped InSb crystal wafer in the terahertz spectral range. Description of this effect is presented and the obtained parameters are compared with a Hall effect measurement. Conclusion Analyzing the phonon/free carrier contribution to the permittivity of the samples shows their possible use as plasmonic materials; the surface plasmon properties of semiconductors in the THz range resemble those of noble metals in the visible and near infrared range and their properties are tunable by either doping or magnetic field.
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allfields	10.1186/s41476-017-0044-x doi (DE-627)SPR038228122 (SPR)s41476-017-0044-x-e DE-627 ger DE-627 rakwb eng Chochol, Jan verfasserin (orcid)0000-0003-2998-7622 aut Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2017 Background In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field. Methods Several single-crystal wafer samples (n,p-doped GaAs, n-doped InP, and n,p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy. Results The optical parameters of III-V semiconductors are presented. Moreover, strong magnetic modulation of permittivity was demonstrated on the undoped InSb crystal wafer in the terahertz spectral range. Description of this effect is presented and the obtained parameters are compared with a Hall effect measurement. Conclusion Analyzing the phonon/free carrier contribution to the permittivity of the samples shows their possible use as plasmonic materials; the surface plasmon properties of semiconductors in the THz range resemble those of noble metals in the visible and near infrared range and their properties are tunable by either doping or magnetic field. Surface plasmons (dpeaa)DE-He213 Semiconductor materials (dpeaa)DE-He213 Magneto-optical materials (dpeaa)DE-He213 THz-TDS (dpeaa)DE-He213 FTIR (dpeaa)DE-He213 Postava, Kamil aut Čada, Michael aut Vanwolleghem, Mathias aut Mičica, Martin aut Halagačka, Lukáš aut Lampin, Jean-François aut Pištora, Jaromír aut Enthalten in Journal of the European Optical Society London, 2006 13(2017), 1 vom: 01. Mai (DE-627)518101673 (DE-600)2251568-9 1990-2573 nnns volume:13 year:2017 number:1 day:01 month:05 https://dx.doi.org/10.1186/s41476-017-0044-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2017 1 01 05
spelling	10.1186/s41476-017-0044-x doi (DE-627)SPR038228122 (SPR)s41476-017-0044-x-e DE-627 ger DE-627 rakwb eng Chochol, Jan verfasserin (orcid)0000-0003-2998-7622 aut Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2017 Background In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field. Methods Several single-crystal wafer samples (n,p-doped GaAs, n-doped InP, and n,p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy. Results The optical parameters of III-V semiconductors are presented. Moreover, strong magnetic modulation of permittivity was demonstrated on the undoped InSb crystal wafer in the terahertz spectral range. Description of this effect is presented and the obtained parameters are compared with a Hall effect measurement. Conclusion Analyzing the phonon/free carrier contribution to the permittivity of the samples shows their possible use as plasmonic materials; the surface plasmon properties of semiconductors in the THz range resemble those of noble metals in the visible and near infrared range and their properties are tunable by either doping or magnetic field. Surface plasmons (dpeaa)DE-He213 Semiconductor materials (dpeaa)DE-He213 Magneto-optical materials (dpeaa)DE-He213 THz-TDS (dpeaa)DE-He213 FTIR (dpeaa)DE-He213 Postava, Kamil aut Čada, Michael aut Vanwolleghem, Mathias aut Mičica, Martin aut Halagačka, Lukáš aut Lampin, Jean-François aut Pištora, Jaromír aut Enthalten in Journal of the European Optical Society London, 2006 13(2017), 1 vom: 01. Mai (DE-627)518101673 (DE-600)2251568-9 1990-2573 nnns volume:13 year:2017 number:1 day:01 month:05 https://dx.doi.org/10.1186/s41476-017-0044-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2017 1 01 05
allfields_unstemmed	10.1186/s41476-017-0044-x doi (DE-627)SPR038228122 (SPR)s41476-017-0044-x-e DE-627 ger DE-627 rakwb eng Chochol, Jan verfasserin (orcid)0000-0003-2998-7622 aut Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2017 Background In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field. Methods Several single-crystal wafer samples (n,p-doped GaAs, n-doped InP, and n,p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy. Results The optical parameters of III-V semiconductors are presented. Moreover, strong magnetic modulation of permittivity was demonstrated on the undoped InSb crystal wafer in the terahertz spectral range. Description of this effect is presented and the obtained parameters are compared with a Hall effect measurement. Conclusion Analyzing the phonon/free carrier contribution to the permittivity of the samples shows their possible use as plasmonic materials; the surface plasmon properties of semiconductors in the THz range resemble those of noble metals in the visible and near infrared range and their properties are tunable by either doping or magnetic field. Surface plasmons (dpeaa)DE-He213 Semiconductor materials (dpeaa)DE-He213 Magneto-optical materials (dpeaa)DE-He213 THz-TDS (dpeaa)DE-He213 FTIR (dpeaa)DE-He213 Postava, Kamil aut Čada, Michael aut Vanwolleghem, Mathias aut Mičica, Martin aut Halagačka, Lukáš aut Lampin, Jean-François aut Pištora, Jaromír aut Enthalten in Journal of the European Optical Society London, 2006 13(2017), 1 vom: 01. Mai (DE-627)518101673 (DE-600)2251568-9 1990-2573 nnns volume:13 year:2017 number:1 day:01 month:05 https://dx.doi.org/10.1186/s41476-017-0044-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2017 1 01 05
allfieldsGer	10.1186/s41476-017-0044-x doi (DE-627)SPR038228122 (SPR)s41476-017-0044-x-e DE-627 ger DE-627 rakwb eng Chochol, Jan verfasserin (orcid)0000-0003-2998-7622 aut Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2017 Background In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field. Methods Several single-crystal wafer samples (n,p-doped GaAs, n-doped InP, and n,p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy. Results The optical parameters of III-V semiconductors are presented. Moreover, strong magnetic modulation of permittivity was demonstrated on the undoped InSb crystal wafer in the terahertz spectral range. Description of this effect is presented and the obtained parameters are compared with a Hall effect measurement. Conclusion Analyzing the phonon/free carrier contribution to the permittivity of the samples shows their possible use as plasmonic materials; the surface plasmon properties of semiconductors in the THz range resemble those of noble metals in the visible and near infrared range and their properties are tunable by either doping or magnetic field. Surface plasmons (dpeaa)DE-He213 Semiconductor materials (dpeaa)DE-He213 Magneto-optical materials (dpeaa)DE-He213 THz-TDS (dpeaa)DE-He213 FTIR (dpeaa)DE-He213 Postava, Kamil aut Čada, Michael aut Vanwolleghem, Mathias aut Mičica, Martin aut Halagačka, Lukáš aut Lampin, Jean-François aut Pištora, Jaromír aut Enthalten in Journal of the European Optical Society London, 2006 13(2017), 1 vom: 01. Mai (DE-627)518101673 (DE-600)2251568-9 1990-2573 nnns volume:13 year:2017 number:1 day:01 month:05 https://dx.doi.org/10.1186/s41476-017-0044-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2017 1 01 05
allfieldsSound	10.1186/s41476-017-0044-x doi (DE-627)SPR038228122 (SPR)s41476-017-0044-x-e DE-627 ger DE-627 rakwb eng Chochol, Jan verfasserin (orcid)0000-0003-2998-7622 aut Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2017 Background In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field. Methods Several single-crystal wafer samples (n,p-doped GaAs, n-doped InP, and n,p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy. Results The optical parameters of III-V semiconductors are presented. Moreover, strong magnetic modulation of permittivity was demonstrated on the undoped InSb crystal wafer in the terahertz spectral range. Description of this effect is presented and the obtained parameters are compared with a Hall effect measurement. Conclusion Analyzing the phonon/free carrier contribution to the permittivity of the samples shows their possible use as plasmonic materials; the surface plasmon properties of semiconductors in the THz range resemble those of noble metals in the visible and near infrared range and their properties are tunable by either doping or magnetic field. Surface plasmons (dpeaa)DE-He213 Semiconductor materials (dpeaa)DE-He213 Magneto-optical materials (dpeaa)DE-He213 THz-TDS (dpeaa)DE-He213 FTIR (dpeaa)DE-He213 Postava, Kamil aut Čada, Michael aut Vanwolleghem, Mathias aut Mičica, Martin aut Halagačka, Lukáš aut Lampin, Jean-François aut Pištora, Jaromír aut Enthalten in Journal of the European Optical Society London, 2006 13(2017), 1 vom: 01. Mai (DE-627)518101673 (DE-600)2251568-9 1990-2573 nnns volume:13 year:2017 number:1 day:01 month:05 https://dx.doi.org/10.1186/s41476-017-0044-x kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2017 1 01 05
language	English
source	Enthalten in Journal of the European Optical Society 13(2017), 1 vom: 01. Mai volume:13 year:2017 number:1 day:01 month:05
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topic_facet	Surface plasmons Semiconductor materials Magneto-optical materials THz-TDS FTIR
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authorswithroles_txt_mv	Chochol, Jan @@aut@@ Postava, Kamil @@aut@@ Čada, Michael @@aut@@ Vanwolleghem, Mathias @@aut@@ Mičica, Martin @@aut@@ Halagačka, Lukáš @@aut@@ Lampin, Jean-François @@aut@@ Pištora, Jaromír @@aut@@
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We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field. Methods Several single-crystal wafer samples (n,p-doped GaAs, n-doped InP, and n,p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy. Results The optical parameters of III-V semiconductors are presented. Moreover, strong magnetic modulation of permittivity was demonstrated on the undoped InSb crystal wafer in the terahertz spectral range. Description of this effect is presented and the obtained parameters are compared with a Hall effect measurement. 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author	Chochol, Jan
spellingShingle	Chochol, Jan misc Surface plasmons misc Semiconductor materials misc Magneto-optical materials misc THz-TDS misc FTIR Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range
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topic_title	Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range Surface plasmons (dpeaa)DE-He213 Semiconductor materials (dpeaa)DE-He213 Magneto-optical materials (dpeaa)DE-He213 THz-TDS (dpeaa)DE-He213 FTIR (dpeaa)DE-He213
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title	Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range
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title_full	Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range
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author_browse	Chochol, Jan Postava, Kamil Čada, Michael Vanwolleghem, Mathias Mičica, Martin Halagačka, Lukáš Lampin, Jean-François Pištora, Jaromír
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title_sort	plasmonic behavior of iii-v semiconductors in far-infrared and terahertz range
title_auth	Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range
abstract	Background In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field. Methods Several single-crystal wafer samples (n,p-doped GaAs, n-doped InP, and n,p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy. Results The optical parameters of III-V semiconductors are presented. Moreover, strong magnetic modulation of permittivity was demonstrated on the undoped InSb crystal wafer in the terahertz spectral range. Description of this effect is presented and the obtained parameters are compared with a Hall effect measurement. Conclusion Analyzing the phonon/free carrier contribution to the permittivity of the samples shows their possible use as plasmonic materials; the surface plasmon properties of semiconductors in the THz range resemble those of noble metals in the visible and near infrared range and their properties are tunable by either doping or magnetic field. © The Author(s) 2017
abstractGer	Background In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field. Methods Several single-crystal wafer samples (n,p-doped GaAs, n-doped InP, and n,p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy. Results The optical parameters of III-V semiconductors are presented. Moreover, strong magnetic modulation of permittivity was demonstrated on the undoped InSb crystal wafer in the terahertz spectral range. Description of this effect is presented and the obtained parameters are compared with a Hall effect measurement. Conclusion Analyzing the phonon/free carrier contribution to the permittivity of the samples shows their possible use as plasmonic materials; the surface plasmon properties of semiconductors in the THz range resemble those of noble metals in the visible and near infrared range and their properties are tunable by either doping or magnetic field. © The Author(s) 2017
abstract_unstemmed	Background In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field. Methods Several single-crystal wafer samples (n,p-doped GaAs, n-doped InP, and n,p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy. Results The optical parameters of III-V semiconductors are presented. Moreover, strong magnetic modulation of permittivity was demonstrated on the undoped InSb crystal wafer in the terahertz spectral range. Description of this effect is presented and the obtained parameters are compared with a Hall effect measurement. Conclusion Analyzing the phonon/free carrier contribution to the permittivity of the samples shows their possible use as plasmonic materials; the surface plasmon properties of semiconductors in the THz range resemble those of noble metals in the visible and near infrared range and their properties are tunable by either doping or magnetic field. © The Author(s) 2017
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title_short	Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range
url	https://dx.doi.org/10.1186/s41476-017-0044-x
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author2	Postava, Kamil Čada, Michael Vanwolleghem, Mathias Mičica, Martin Halagačka, Lukáš Lampin, Jean-François Pištora, Jaromír
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Conclusion Analyzing the phonon/free carrier contribution to the permittivity of the samples shows their possible use as plasmonic materials; the surface plasmon properties of semiconductors in the THz range resemble those of noble metals in the visible and near infrared range and their properties are tunable by either doping or magnetic field.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surface plasmons</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor materials</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Magneto-optical materials</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">THz-TDS</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">FTIR</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Postava, Kamil</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Čada, Michael</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Vanwolleghem, Mathias</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mičica, Martin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Halagačka, Lukáš</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lampin, Jean-François</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pištora, Jaromír</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of the European Optical Society</subfield><subfield code="d">London, 2006</subfield><subfield code="g">13(2017), 1 vom: 01. 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Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range

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