Effect of Hydrogen Gas Conditions on the Structural, Optical, and Electronic Features of nc-Si:H Thin Films
Abstract Hydrogenated nanocrystalline Si (nc-Si: H) films were prepared by plasma enhanced chemical vapor deposition using $ SiH_{4} $/$ H_{2} $ gas. The Si nanocrystallites of the films consisted of Si–$ H_{n} $ (n = 1, 2, 3) bonds. The relative fraction of the Si–H bonds affected the size and volu...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Shim, Jae-Hyun [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Schlagwörter: |
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| Anmerkung: |
© The Korean Institute of Electrical and Electronic Material Engineers 2019 |
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| Übergeordnetes Werk: |
Enthalten in: Transactions on electrical and electronic materials - [Cham] : Springer, 2000, 20(2019), 2 vom: 16. März, Seite 85-91 |
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| Übergeordnetes Werk: |
volume:20 ; year:2019 ; number:2 ; day:16 ; month:03 ; pages:85-91 |
| Links: |
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| DOI / URN: |
10.1007/s42341-019-00104-y |
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| Katalog-ID: |
SPR038529327 |
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| 520 | |a Abstract Hydrogenated nanocrystalline Si (nc-Si: H) films were prepared by plasma enhanced chemical vapor deposition using $ SiH_{4} $/$ H_{2} $ gas. The Si nanocrystallites of the films consisted of Si–$ H_{n} $ (n = 1, 2, 3) bonds. The relative fraction of the Si–H bonds affected the size and volume fraction of the crystallites. Hydrogen radicals are essential for the formation of Si nanocrystallites. The Si nanocrystallite size increased from ~ 2.0 to ~ 3.0 nm with an increase in the $ H_{2} $ flow rate from 60 to 90 sccm. At the $ H_{2} $ flow rate of 90 sccm, the film became completely polymeric consisting mainly of Si–H-type bonds. | ||
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| 650 | 4 | |a Nanostructure |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Nanocrystallite |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Chemical bonding |7 (dpeaa)DE-He213 | |
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| 700 | 1 | |a Cho, Nam-Hee |4 aut | |
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10.1007/s42341-019-00104-y doi (DE-627)SPR038529327 (SPR)s42341-019-00104-y-e DE-627 ger DE-627 rakwb eng Shim, Jae-Hyun verfasserin (orcid)0000-0002-9084-8843 aut Effect of Hydrogen Gas Conditions on the Structural, Optical, and Electronic Features of nc-Si:H Thin Films 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Korean Institute of Electrical and Electronic Material Engineers 2019 Abstract Hydrogenated nanocrystalline Si (nc-Si: H) films were prepared by plasma enhanced chemical vapor deposition using $ SiH_{4} $/$ H_{2} $ gas. The Si nanocrystallites of the films consisted of Si–$ H_{n} $ (n = 1, 2, 3) bonds. The relative fraction of the Si–H bonds affected the size and volume fraction of the crystallites. Hydrogen radicals are essential for the formation of Si nanocrystallites. The Si nanocrystallite size increased from ~ 2.0 to ~ 3.0 nm with an increase in the $ H_{2} $ flow rate from 60 to 90 sccm. At the $ H_{2} $ flow rate of 90 sccm, the film became completely polymeric consisting mainly of Si–H-type bonds. Silicon (dpeaa)DE-He213 Plasma enhanced chemical vapor deposition (dpeaa)DE-He213 Photoluminescence (dpeaa)DE-He213 Nanostructure (dpeaa)DE-He213 Nanocrystallite (dpeaa)DE-He213 Chemical bonding (dpeaa)DE-He213 Kim, Ju-Han aut Cho, Nam-Hee aut Enthalten in Transactions on electrical and electronic materials [Cham] : Springer, 2000 20(2019), 2 vom: 16. März, Seite 85-91 (DE-627)72819984X (DE-600)2687624-3 2092-7592 nnns volume:20 year:2019 number:2 day:16 month:03 pages:85-91 https://dx.doi.org/10.1007/s42341-019-00104-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 20 2019 2 16 03 85-91 |
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10.1007/s42341-019-00104-y doi (DE-627)SPR038529327 (SPR)s42341-019-00104-y-e DE-627 ger DE-627 rakwb eng Shim, Jae-Hyun verfasserin (orcid)0000-0002-9084-8843 aut Effect of Hydrogen Gas Conditions on the Structural, Optical, and Electronic Features of nc-Si:H Thin Films 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Korean Institute of Electrical and Electronic Material Engineers 2019 Abstract Hydrogenated nanocrystalline Si (nc-Si: H) films were prepared by plasma enhanced chemical vapor deposition using $ SiH_{4} $/$ H_{2} $ gas. The Si nanocrystallites of the films consisted of Si–$ H_{n} $ (n = 1, 2, 3) bonds. The relative fraction of the Si–H bonds affected the size and volume fraction of the crystallites. Hydrogen radicals are essential for the formation of Si nanocrystallites. The Si nanocrystallite size increased from ~ 2.0 to ~ 3.0 nm with an increase in the $ H_{2} $ flow rate from 60 to 90 sccm. At the $ H_{2} $ flow rate of 90 sccm, the film became completely polymeric consisting mainly of Si–H-type bonds. Silicon (dpeaa)DE-He213 Plasma enhanced chemical vapor deposition (dpeaa)DE-He213 Photoluminescence (dpeaa)DE-He213 Nanostructure (dpeaa)DE-He213 Nanocrystallite (dpeaa)DE-He213 Chemical bonding (dpeaa)DE-He213 Kim, Ju-Han aut Cho, Nam-Hee aut Enthalten in Transactions on electrical and electronic materials [Cham] : Springer, 2000 20(2019), 2 vom: 16. März, Seite 85-91 (DE-627)72819984X (DE-600)2687624-3 2092-7592 nnns volume:20 year:2019 number:2 day:16 month:03 pages:85-91 https://dx.doi.org/10.1007/s42341-019-00104-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 20 2019 2 16 03 85-91 |
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10.1007/s42341-019-00104-y doi (DE-627)SPR038529327 (SPR)s42341-019-00104-y-e DE-627 ger DE-627 rakwb eng Shim, Jae-Hyun verfasserin (orcid)0000-0002-9084-8843 aut Effect of Hydrogen Gas Conditions on the Structural, Optical, and Electronic Features of nc-Si:H Thin Films 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Korean Institute of Electrical and Electronic Material Engineers 2019 Abstract Hydrogenated nanocrystalline Si (nc-Si: H) films were prepared by plasma enhanced chemical vapor deposition using $ SiH_{4} $/$ H_{2} $ gas. The Si nanocrystallites of the films consisted of Si–$ H_{n} $ (n = 1, 2, 3) bonds. The relative fraction of the Si–H bonds affected the size and volume fraction of the crystallites. Hydrogen radicals are essential for the formation of Si nanocrystallites. The Si nanocrystallite size increased from ~ 2.0 to ~ 3.0 nm with an increase in the $ H_{2} $ flow rate from 60 to 90 sccm. At the $ H_{2} $ flow rate of 90 sccm, the film became completely polymeric consisting mainly of Si–H-type bonds. Silicon (dpeaa)DE-He213 Plasma enhanced chemical vapor deposition (dpeaa)DE-He213 Photoluminescence (dpeaa)DE-He213 Nanostructure (dpeaa)DE-He213 Nanocrystallite (dpeaa)DE-He213 Chemical bonding (dpeaa)DE-He213 Kim, Ju-Han aut Cho, Nam-Hee aut Enthalten in Transactions on electrical and electronic materials [Cham] : Springer, 2000 20(2019), 2 vom: 16. März, Seite 85-91 (DE-627)72819984X (DE-600)2687624-3 2092-7592 nnns volume:20 year:2019 number:2 day:16 month:03 pages:85-91 https://dx.doi.org/10.1007/s42341-019-00104-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 20 2019 2 16 03 85-91 |
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Shim, Jae-Hyun |
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Shim, Jae-Hyun misc Silicon misc Plasma enhanced chemical vapor deposition misc Photoluminescence misc Nanostructure misc Nanocrystallite misc Chemical bonding Effect of Hydrogen Gas Conditions on the Structural, Optical, and Electronic Features of nc-Si:H Thin Films |
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Effect of Hydrogen Gas Conditions on the Structural, Optical, and Electronic Features of nc-Si:H Thin Films Silicon (dpeaa)DE-He213 Plasma enhanced chemical vapor deposition (dpeaa)DE-He213 Photoluminescence (dpeaa)DE-He213 Nanostructure (dpeaa)DE-He213 Nanocrystallite (dpeaa)DE-He213 Chemical bonding (dpeaa)DE-He213 |
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Effect of Hydrogen Gas Conditions on the Structural, Optical, and Electronic Features of nc-Si:H Thin Films |
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Effect of Hydrogen Gas Conditions on the Structural, Optical, and Electronic Features of nc-Si:H Thin Films |
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effect of hydrogen gas conditions on the structural, optical, and electronic features of nc-si:h thin films |
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Effect of Hydrogen Gas Conditions on the Structural, Optical, and Electronic Features of nc-Si:H Thin Films |
| abstract |
Abstract Hydrogenated nanocrystalline Si (nc-Si: H) films were prepared by plasma enhanced chemical vapor deposition using $ SiH_{4} $/$ H_{2} $ gas. The Si nanocrystallites of the films consisted of Si–$ H_{n} $ (n = 1, 2, 3) bonds. The relative fraction of the Si–H bonds affected the size and volume fraction of the crystallites. Hydrogen radicals are essential for the formation of Si nanocrystallites. The Si nanocrystallite size increased from ~ 2.0 to ~ 3.0 nm with an increase in the $ H_{2} $ flow rate from 60 to 90 sccm. At the $ H_{2} $ flow rate of 90 sccm, the film became completely polymeric consisting mainly of Si–H-type bonds. © The Korean Institute of Electrical and Electronic Material Engineers 2019 |
| abstractGer |
Abstract Hydrogenated nanocrystalline Si (nc-Si: H) films were prepared by plasma enhanced chemical vapor deposition using $ SiH_{4} $/$ H_{2} $ gas. The Si nanocrystallites of the films consisted of Si–$ H_{n} $ (n = 1, 2, 3) bonds. The relative fraction of the Si–H bonds affected the size and volume fraction of the crystallites. Hydrogen radicals are essential for the formation of Si nanocrystallites. The Si nanocrystallite size increased from ~ 2.0 to ~ 3.0 nm with an increase in the $ H_{2} $ flow rate from 60 to 90 sccm. At the $ H_{2} $ flow rate of 90 sccm, the film became completely polymeric consisting mainly of Si–H-type bonds. © The Korean Institute of Electrical and Electronic Material Engineers 2019 |
| abstract_unstemmed |
Abstract Hydrogenated nanocrystalline Si (nc-Si: H) films were prepared by plasma enhanced chemical vapor deposition using $ SiH_{4} $/$ H_{2} $ gas. The Si nanocrystallites of the films consisted of Si–$ H_{n} $ (n = 1, 2, 3) bonds. The relative fraction of the Si–H bonds affected the size and volume fraction of the crystallites. Hydrogen radicals are essential for the formation of Si nanocrystallites. The Si nanocrystallite size increased from ~ 2.0 to ~ 3.0 nm with an increase in the $ H_{2} $ flow rate from 60 to 90 sccm. At the $ H_{2} $ flow rate of 90 sccm, the film became completely polymeric consisting mainly of Si–H-type bonds. © The Korean Institute of Electrical and Electronic Material Engineers 2019 |
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Effect of Hydrogen Gas Conditions on the Structural, Optical, and Electronic Features of nc-Si:H Thin Films |
| url |
https://dx.doi.org/10.1007/s42341-019-00104-y |
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| author2 |
Kim, Ju-Han Cho, Nam-Hee |
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Kim, Ju-Han Cho, Nam-Hee |
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| doi_str |
10.1007/s42341-019-00104-y |
| up_date |
2024-07-03T18:40:46.579Z |
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