Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser
Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} %$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ laye...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zhang, Junqin [verfasserIn] Ma, Jinge [verfasserIn] Yang, Yintang [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2020 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of Russian laser research - New York, NY [u.a.] : Consultants Bureau, 1980, 41(2020), 1 vom: Jan., Seite 98-103 |
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| Übergeordnetes Werk: |
volume:41 ; year:2020 ; number:1 ; month:01 ; pages:98-103 |
| Links: |
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| DOI / URN: |
10.1007/s10946-020-09853-1 |
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| Katalog-ID: |
SPR039226174 |
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| 520 | |a Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} %$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. | ||
| 650 | 4 | |a Si-based laser |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a multi-quantum-well laser |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a GeSn/SiGeSn laser |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Ma, Jinge |e verfasserin |4 aut | |
| 700 | 1 | |a Yang, Yintang |e verfasserin |4 aut | |
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| 856 | 4 | 0 | |u https://dx.doi.org/10.1007/s10946-020-09853-1 |z lizenzpflichtig |3 Volltext |
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10.1007/s10946-020-09853-1 doi (DE-627)SPR039226174 (SPR)s10946-020-09853-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.38 bkl Zhang, Junqin verfasserin aut Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} %$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. Si-based laser (dpeaa)DE-He213 multi-quantum-well laser (dpeaa)DE-He213 GeSn/SiGeSn laser (dpeaa)DE-He213 Ma, Jinge verfasserin aut Yang, Yintang verfasserin aut Enthalten in Journal of Russian laser research New York, NY [u.a.] : Consultants Bureau, 1980 41(2020), 1 vom: Jan., Seite 98-103 (DE-627)325573522 (DE-600)2037690-X 1573-8760 nnns volume:41 year:2020 number:1 month:01 pages:98-103 https://dx.doi.org/10.1007/s10946-020-09853-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.38 ASE AR 41 2020 1 01 98-103 |
| spelling |
10.1007/s10946-020-09853-1 doi (DE-627)SPR039226174 (SPR)s10946-020-09853-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.38 bkl Zhang, Junqin verfasserin aut Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} %$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. Si-based laser (dpeaa)DE-He213 multi-quantum-well laser (dpeaa)DE-He213 GeSn/SiGeSn laser (dpeaa)DE-He213 Ma, Jinge verfasserin aut Yang, Yintang verfasserin aut Enthalten in Journal of Russian laser research New York, NY [u.a.] : Consultants Bureau, 1980 41(2020), 1 vom: Jan., Seite 98-103 (DE-627)325573522 (DE-600)2037690-X 1573-8760 nnns volume:41 year:2020 number:1 month:01 pages:98-103 https://dx.doi.org/10.1007/s10946-020-09853-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.38 ASE AR 41 2020 1 01 98-103 |
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10.1007/s10946-020-09853-1 doi (DE-627)SPR039226174 (SPR)s10946-020-09853-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.38 bkl Zhang, Junqin verfasserin aut Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} %$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. Si-based laser (dpeaa)DE-He213 multi-quantum-well laser (dpeaa)DE-He213 GeSn/SiGeSn laser (dpeaa)DE-He213 Ma, Jinge verfasserin aut Yang, Yintang verfasserin aut Enthalten in Journal of Russian laser research New York, NY [u.a.] : Consultants Bureau, 1980 41(2020), 1 vom: Jan., Seite 98-103 (DE-627)325573522 (DE-600)2037690-X 1573-8760 nnns volume:41 year:2020 number:1 month:01 pages:98-103 https://dx.doi.org/10.1007/s10946-020-09853-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.38 ASE AR 41 2020 1 01 98-103 |
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10.1007/s10946-020-09853-1 doi (DE-627)SPR039226174 (SPR)s10946-020-09853-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.38 bkl Zhang, Junqin verfasserin aut Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} %$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. Si-based laser (dpeaa)DE-He213 multi-quantum-well laser (dpeaa)DE-He213 GeSn/SiGeSn laser (dpeaa)DE-He213 Ma, Jinge verfasserin aut Yang, Yintang verfasserin aut Enthalten in Journal of Russian laser research New York, NY [u.a.] : Consultants Bureau, 1980 41(2020), 1 vom: Jan., Seite 98-103 (DE-627)325573522 (DE-600)2037690-X 1573-8760 nnns volume:41 year:2020 number:1 month:01 pages:98-103 https://dx.doi.org/10.1007/s10946-020-09853-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.38 ASE AR 41 2020 1 01 98-103 |
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10.1007/s10946-020-09853-1 doi (DE-627)SPR039226174 (SPR)s10946-020-09853-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.38 bkl Zhang, Junqin verfasserin aut Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} %$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. Si-based laser (dpeaa)DE-He213 multi-quantum-well laser (dpeaa)DE-He213 GeSn/SiGeSn laser (dpeaa)DE-He213 Ma, Jinge verfasserin aut Yang, Yintang verfasserin aut Enthalten in Journal of Russian laser research New York, NY [u.a.] : Consultants Bureau, 1980 41(2020), 1 vom: Jan., Seite 98-103 (DE-627)325573522 (DE-600)2037690-X 1573-8760 nnns volume:41 year:2020 number:1 month:01 pages:98-103 https://dx.doi.org/10.1007/s10946-020-09853-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.38 ASE AR 41 2020 1 01 98-103 |
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Enthalten in Journal of Russian laser research 41(2020), 1 vom: Jan., Seite 98-103 volume:41 year:2020 number:1 month:01 pages:98-103 |
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Zhang, Junqin @@aut@@ Ma, Jinge @@aut@@ Yang, Yintang @@aut@@ |
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|
| author |
Zhang, Junqin |
| spellingShingle |
Zhang, Junqin ddc 530 bkl 33.38 misc Si-based laser misc multi-quantum-well laser misc GeSn/SiGeSn laser Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser |
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530 ASE 33.38 bkl Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser Si-based laser (dpeaa)DE-He213 multi-quantum-well laser (dpeaa)DE-He213 GeSn/SiGeSn laser (dpeaa)DE-He213 |
| topic |
ddc 530 bkl 33.38 misc Si-based laser misc multi-quantum-well laser misc GeSn/SiGeSn laser |
| topic_unstemmed |
ddc 530 bkl 33.38 misc Si-based laser misc multi-quantum-well laser misc GeSn/SiGeSn laser |
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ddc 530 bkl 33.38 misc Si-based laser misc multi-quantum-well laser misc GeSn/SiGeSn laser |
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Elektronische Aufsätze Aufsätze Elektronische Ressource |
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Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser |
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(DE-627)SPR039226174 (SPR)s10946-020-09853-1-e |
| title_full |
Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser |
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Zhang, Junqin |
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Journal of Russian laser research |
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Journal of Russian laser research |
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Zhang, Junqin Ma, Jinge Yang, Yintang |
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530 ASE 33.38 bkl |
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Elektronische Aufsätze |
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Zhang, Junqin |
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10.1007/s10946-020-09853-1 |
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verfasserin |
| title_sort |
design of a si-based lattice-matched gesn/sigesn multi-quantum-well laser |
| title_auth |
Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser |
| abstract |
Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} %$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. |
| abstractGer |
Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} %$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. |
| abstract_unstemmed |
Abstract By calculating the heterojunction band alignment of GeSn/SiGeSn, a $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser was designed, where three $ Ge_{0.9} %$ Sn_{0.1} $ layers act as wells separated by three $ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ layers as barriers. The maximum TE gain reaches 7000 $ cm^{−1} $ at 0.5 eV, and the maximum TM gain reaches 5500 $ cm^{−1} $ at 0.52 eV. The modal gain of the $ Ge_{0.9} %$ Sn_{0.1} $/$ Si_{0.14} %$ Ge_{0.71} %$ Sn_{0.15} $ multi-quantum-well laser we proposed and designed can reach 100 $ cm^{−1} $ with a current density of 5 kA/$ cm^{2} $. The result indicates that it is possible to obtain a Si-based laser. |
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| title_short |
Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser |
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https://dx.doi.org/10.1007/s10946-020-09853-1 |
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Ma, Jinge Yang, Yintang |
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Ma, Jinge Yang, Yintang |
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| doi_str |
10.1007/s10946-020-09853-1 |
| up_date |
2024-07-03T22:46:11.902Z |
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