Fabrication of OMT-Coupled Kinetic Inductance Detector for CMB Detection

Abstract Future cosmic microwave background (CMB) experiments, including the large scale ground-based Stage Four CMB Experiment (CMB-S4), satellites, and balloons, aim to map the CMB to an unprecedented precision in order to answer several key questions in cosmology. However, to reach the target noi...
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Autor*in:	Tang, Q. Y. [verfasserIn] Barry, P. S. [verfasserIn] Cecil, T. W. [verfasserIn] Shirokoff, E. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	Fabrication Kinetic inductance detector Cosmic microwave background

Übergeordnetes Werk:	Enthalten in: Journal of low temperature physics - Dordrecht : Springer Science + Business Media B.V., 1969, 199(2020), 1-2 vom: 29. Jan., Seite 362-368
Übergeordnetes Werk:	volume:199 ; year:2020 ; number:1-2 ; day:29 ; month:01 ; pages:362-368

Links:	Volltext

DOI / URN:	10.1007/s10909-020-02341-5

Katalog-ID:	SPR039369056

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520			\|a Abstract Future cosmic microwave background (CMB) experiments, including the large scale ground-based Stage Four CMB Experiment (CMB-S4), satellites, and balloons, aim to map the CMB to an unprecedented precision in order to answer several key questions in cosmology. However, to reach the target noise sensitivity, more than 100,000 detectors will be needed. Arrays of kinetic inductance detectors (KIDs) are a promising alternative for experiments that require large number of detectors due to the intrinsic multiplexing capabilities. We present the fabrication procedure for a prototype planar orthomode transducer (OMT)-coupled multi-color KID array optimized for 220/270 GHz frequency bands. These devices are made from silicon-on-insulator wafers to provide a low-loss substrate for the KIDs. The OMT couples the two polarizations of light from a wide-band feedhorn to separate Nb/SiN/Nb microstrip lines, which are then coupled to Al/Nb lumped-element KIDs (LEKIDs). The silicon on the backside of the OMT is etched away using deep reactive ion etch to release the OMT membrane to enable operation over a wide bandwidth. Finally, the buried oxide is removed underneath the KID capacitors in order to minimize two-level system noise and loss mitigation. We achieved a good yield (> 80%) on our prototype devices.
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912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_206
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
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912			\|a GBV_ILN_250
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912			\|a GBV_ILN_370
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912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
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912			\|a GBV_ILN_2005
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912			\|a GBV_ILN_2007
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912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
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912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
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matchkey_str	article:15737357:2020----::arctoootopekntcnutneee
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bklnumber	33.09 33.30 33.60
publishDate	2020
allfields	10.1007/s10909-020-02341-5 doi (DE-627)SPR039369056 (SPR)s10909-020-02341-5-e DE-627 ger DE-627 rakwb eng 530 ASE 33.09 bkl 33.30 bkl 33.60 bkl Tang, Q. Y. verfasserin aut Fabrication of OMT-Coupled Kinetic Inductance Detector for CMB Detection 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Future cosmic microwave background (CMB) experiments, including the large scale ground-based Stage Four CMB Experiment (CMB-S4), satellites, and balloons, aim to map the CMB to an unprecedented precision in order to answer several key questions in cosmology. However, to reach the target noise sensitivity, more than 100,000 detectors will be needed. Arrays of kinetic inductance detectors (KIDs) are a promising alternative for experiments that require large number of detectors due to the intrinsic multiplexing capabilities. We present the fabrication procedure for a prototype planar orthomode transducer (OMT)-coupled multi-color KID array optimized for 220/270 GHz frequency bands. These devices are made from silicon-on-insulator wafers to provide a low-loss substrate for the KIDs. The OMT couples the two polarizations of light from a wide-band feedhorn to separate Nb/SiN/Nb microstrip lines, which are then coupled to Al/Nb lumped-element KIDs (LEKIDs). The silicon on the backside of the OMT is etched away using deep reactive ion etch to release the OMT membrane to enable operation over a wide bandwidth. Finally, the buried oxide is removed underneath the KID capacitors in order to minimize two-level system noise and loss mitigation. We achieved a good yield (> 80%) on our prototype devices. Fabrication (dpeaa)DE-He213 Kinetic inductance detector (dpeaa)DE-He213 Cosmic microwave background (dpeaa)DE-He213 Barry, P. S. verfasserin aut Cecil, T. W. verfasserin aut Shirokoff, E. verfasserin aut Enthalten in Journal of low temperature physics Dordrecht : Springer Science + Business Media B.V., 1969 199(2020), 1-2 vom: 29. Jan., Seite 362-368 (DE-627)320575411 (DE-600)2016984-X 1573-7357 nnns volume:199 year:2020 number:1-2 day:29 month:01 pages:362-368 https://dx.doi.org/10.1007/s10909-020-02341-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.09 ASE 33.30 ASE 33.60 ASE AR 199 2020 1-2 29 01 362-368
spelling	10.1007/s10909-020-02341-5 doi (DE-627)SPR039369056 (SPR)s10909-020-02341-5-e DE-627 ger DE-627 rakwb eng 530 ASE 33.09 bkl 33.30 bkl 33.60 bkl Tang, Q. Y. verfasserin aut Fabrication of OMT-Coupled Kinetic Inductance Detector for CMB Detection 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Future cosmic microwave background (CMB) experiments, including the large scale ground-based Stage Four CMB Experiment (CMB-S4), satellites, and balloons, aim to map the CMB to an unprecedented precision in order to answer several key questions in cosmology. However, to reach the target noise sensitivity, more than 100,000 detectors will be needed. Arrays of kinetic inductance detectors (KIDs) are a promising alternative for experiments that require large number of detectors due to the intrinsic multiplexing capabilities. We present the fabrication procedure for a prototype planar orthomode transducer (OMT)-coupled multi-color KID array optimized for 220/270 GHz frequency bands. These devices are made from silicon-on-insulator wafers to provide a low-loss substrate for the KIDs. The OMT couples the two polarizations of light from a wide-band feedhorn to separate Nb/SiN/Nb microstrip lines, which are then coupled to Al/Nb lumped-element KIDs (LEKIDs). The silicon on the backside of the OMT is etched away using deep reactive ion etch to release the OMT membrane to enable operation over a wide bandwidth. Finally, the buried oxide is removed underneath the KID capacitors in order to minimize two-level system noise and loss mitigation. We achieved a good yield (> 80%) on our prototype devices. Fabrication (dpeaa)DE-He213 Kinetic inductance detector (dpeaa)DE-He213 Cosmic microwave background (dpeaa)DE-He213 Barry, P. S. verfasserin aut Cecil, T. W. verfasserin aut Shirokoff, E. verfasserin aut Enthalten in Journal of low temperature physics Dordrecht : Springer Science + Business Media B.V., 1969 199(2020), 1-2 vom: 29. Jan., Seite 362-368 (DE-627)320575411 (DE-600)2016984-X 1573-7357 nnns volume:199 year:2020 number:1-2 day:29 month:01 pages:362-368 https://dx.doi.org/10.1007/s10909-020-02341-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.09 ASE 33.30 ASE 33.60 ASE AR 199 2020 1-2 29 01 362-368
allfields_unstemmed	10.1007/s10909-020-02341-5 doi (DE-627)SPR039369056 (SPR)s10909-020-02341-5-e DE-627 ger DE-627 rakwb eng 530 ASE 33.09 bkl 33.30 bkl 33.60 bkl Tang, Q. Y. verfasserin aut Fabrication of OMT-Coupled Kinetic Inductance Detector for CMB Detection 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Future cosmic microwave background (CMB) experiments, including the large scale ground-based Stage Four CMB Experiment (CMB-S4), satellites, and balloons, aim to map the CMB to an unprecedented precision in order to answer several key questions in cosmology. However, to reach the target noise sensitivity, more than 100,000 detectors will be needed. Arrays of kinetic inductance detectors (KIDs) are a promising alternative for experiments that require large number of detectors due to the intrinsic multiplexing capabilities. We present the fabrication procedure for a prototype planar orthomode transducer (OMT)-coupled multi-color KID array optimized for 220/270 GHz frequency bands. These devices are made from silicon-on-insulator wafers to provide a low-loss substrate for the KIDs. The OMT couples the two polarizations of light from a wide-band feedhorn to separate Nb/SiN/Nb microstrip lines, which are then coupled to Al/Nb lumped-element KIDs (LEKIDs). The silicon on the backside of the OMT is etched away using deep reactive ion etch to release the OMT membrane to enable operation over a wide bandwidth. Finally, the buried oxide is removed underneath the KID capacitors in order to minimize two-level system noise and loss mitigation. We achieved a good yield (> 80%) on our prototype devices. Fabrication (dpeaa)DE-He213 Kinetic inductance detector (dpeaa)DE-He213 Cosmic microwave background (dpeaa)DE-He213 Barry, P. S. verfasserin aut Cecil, T. W. verfasserin aut Shirokoff, E. verfasserin aut Enthalten in Journal of low temperature physics Dordrecht : Springer Science + Business Media B.V., 1969 199(2020), 1-2 vom: 29. Jan., Seite 362-368 (DE-627)320575411 (DE-600)2016984-X 1573-7357 nnns volume:199 year:2020 number:1-2 day:29 month:01 pages:362-368 https://dx.doi.org/10.1007/s10909-020-02341-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.09 ASE 33.30 ASE 33.60 ASE AR 199 2020 1-2 29 01 362-368
allfieldsGer	10.1007/s10909-020-02341-5 doi (DE-627)SPR039369056 (SPR)s10909-020-02341-5-e DE-627 ger DE-627 rakwb eng 530 ASE 33.09 bkl 33.30 bkl 33.60 bkl Tang, Q. Y. verfasserin aut Fabrication of OMT-Coupled Kinetic Inductance Detector for CMB Detection 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Future cosmic microwave background (CMB) experiments, including the large scale ground-based Stage Four CMB Experiment (CMB-S4), satellites, and balloons, aim to map the CMB to an unprecedented precision in order to answer several key questions in cosmology. However, to reach the target noise sensitivity, more than 100,000 detectors will be needed. Arrays of kinetic inductance detectors (KIDs) are a promising alternative for experiments that require large number of detectors due to the intrinsic multiplexing capabilities. We present the fabrication procedure for a prototype planar orthomode transducer (OMT)-coupled multi-color KID array optimized for 220/270 GHz frequency bands. These devices are made from silicon-on-insulator wafers to provide a low-loss substrate for the KIDs. The OMT couples the two polarizations of light from a wide-band feedhorn to separate Nb/SiN/Nb microstrip lines, which are then coupled to Al/Nb lumped-element KIDs (LEKIDs). The silicon on the backside of the OMT is etched away using deep reactive ion etch to release the OMT membrane to enable operation over a wide bandwidth. Finally, the buried oxide is removed underneath the KID capacitors in order to minimize two-level system noise and loss mitigation. We achieved a good yield (> 80%) on our prototype devices. Fabrication (dpeaa)DE-He213 Kinetic inductance detector (dpeaa)DE-He213 Cosmic microwave background (dpeaa)DE-He213 Barry, P. S. verfasserin aut Cecil, T. W. verfasserin aut Shirokoff, E. verfasserin aut Enthalten in Journal of low temperature physics Dordrecht : Springer Science + Business Media B.V., 1969 199(2020), 1-2 vom: 29. Jan., Seite 362-368 (DE-627)320575411 (DE-600)2016984-X 1573-7357 nnns volume:199 year:2020 number:1-2 day:29 month:01 pages:362-368 https://dx.doi.org/10.1007/s10909-020-02341-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.09 ASE 33.30 ASE 33.60 ASE AR 199 2020 1-2 29 01 362-368
allfieldsSound	10.1007/s10909-020-02341-5 doi (DE-627)SPR039369056 (SPR)s10909-020-02341-5-e DE-627 ger DE-627 rakwb eng 530 ASE 33.09 bkl 33.30 bkl 33.60 bkl Tang, Q. Y. verfasserin aut Fabrication of OMT-Coupled Kinetic Inductance Detector for CMB Detection 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Future cosmic microwave background (CMB) experiments, including the large scale ground-based Stage Four CMB Experiment (CMB-S4), satellites, and balloons, aim to map the CMB to an unprecedented precision in order to answer several key questions in cosmology. However, to reach the target noise sensitivity, more than 100,000 detectors will be needed. Arrays of kinetic inductance detectors (KIDs) are a promising alternative for experiments that require large number of detectors due to the intrinsic multiplexing capabilities. We present the fabrication procedure for a prototype planar orthomode transducer (OMT)-coupled multi-color KID array optimized for 220/270 GHz frequency bands. These devices are made from silicon-on-insulator wafers to provide a low-loss substrate for the KIDs. The OMT couples the two polarizations of light from a wide-band feedhorn to separate Nb/SiN/Nb microstrip lines, which are then coupled to Al/Nb lumped-element KIDs (LEKIDs). The silicon on the backside of the OMT is etched away using deep reactive ion etch to release the OMT membrane to enable operation over a wide bandwidth. Finally, the buried oxide is removed underneath the KID capacitors in order to minimize two-level system noise and loss mitigation. We achieved a good yield (> 80%) on our prototype devices. Fabrication (dpeaa)DE-He213 Kinetic inductance detector (dpeaa)DE-He213 Cosmic microwave background (dpeaa)DE-He213 Barry, P. S. verfasserin aut Cecil, T. W. verfasserin aut Shirokoff, E. verfasserin aut Enthalten in Journal of low temperature physics Dordrecht : Springer Science + Business Media B.V., 1969 199(2020), 1-2 vom: 29. Jan., Seite 362-368 (DE-627)320575411 (DE-600)2016984-X 1573-7357 nnns volume:199 year:2020 number:1-2 day:29 month:01 pages:362-368 https://dx.doi.org/10.1007/s10909-020-02341-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.09 ASE 33.30 ASE 33.60 ASE AR 199 2020 1-2 29 01 362-368
language	English
source	Enthalten in Journal of low temperature physics 199(2020), 1-2 vom: 29. Jan., Seite 362-368 volume:199 year:2020 number:1-2 day:29 month:01 pages:362-368
sourceStr	Enthalten in Journal of low temperature physics 199(2020), 1-2 vom: 29. Jan., Seite 362-368 volume:199 year:2020 number:1-2 day:29 month:01 pages:362-368
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Fabrication Kinetic inductance detector Cosmic microwave background
dewey-raw	530
isfreeaccess_bool	false
container_title	Journal of low temperature physics
authorswithroles_txt_mv	Tang, Q. Y. @@aut@@ Barry, P. S. @@aut@@ Cecil, T. W. @@aut@@ Shirokoff, E. @@aut@@
publishDateDaySort_date	2020-01-29T00:00:00Z
hierarchy_top_id	320575411
dewey-sort	3530
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language_de	englisch
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author	Tang, Q. Y.
spellingShingle	Tang, Q. Y. ddc 530 bkl 33.09 bkl 33.30 bkl 33.60 misc Fabrication misc Kinetic inductance detector misc Cosmic microwave background Fabrication of OMT-Coupled Kinetic Inductance Detector for CMB Detection
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topic_title	530 ASE 33.09 bkl 33.30 bkl 33.60 bkl Fabrication of OMT-Coupled Kinetic Inductance Detector for CMB Detection Fabrication (dpeaa)DE-He213 Kinetic inductance detector (dpeaa)DE-He213 Cosmic microwave background (dpeaa)DE-He213
topic	ddc 530 bkl 33.09 bkl 33.30 bkl 33.60 misc Fabrication misc Kinetic inductance detector misc Cosmic microwave background
topic_unstemmed	ddc 530 bkl 33.09 bkl 33.30 bkl 33.60 misc Fabrication misc Kinetic inductance detector misc Cosmic microwave background
topic_browse	ddc 530 bkl 33.09 bkl 33.30 bkl 33.60 misc Fabrication misc Kinetic inductance detector misc Cosmic microwave background
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title	Fabrication of OMT-Coupled Kinetic Inductance Detector for CMB Detection
ctrlnum	(DE-627)SPR039369056 (SPR)s10909-020-02341-5-e
title_full	Fabrication of OMT-Coupled Kinetic Inductance Detector for CMB Detection
author_sort	Tang, Q. Y.
journal	Journal of low temperature physics
journalStr	Journal of low temperature physics
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container_start_page	362
author_browse	Tang, Q. Y. Barry, P. S. Cecil, T. W. Shirokoff, E.
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author-letter	Tang, Q. Y.
doi_str_mv	10.1007/s10909-020-02341-5
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title_sort	fabrication of omt-coupled kinetic inductance detector for cmb detection
title_auth	Fabrication of OMT-Coupled Kinetic Inductance Detector for CMB Detection
abstract	Abstract Future cosmic microwave background (CMB) experiments, including the large scale ground-based Stage Four CMB Experiment (CMB-S4), satellites, and balloons, aim to map the CMB to an unprecedented precision in order to answer several key questions in cosmology. However, to reach the target noise sensitivity, more than 100,000 detectors will be needed. Arrays of kinetic inductance detectors (KIDs) are a promising alternative for experiments that require large number of detectors due to the intrinsic multiplexing capabilities. We present the fabrication procedure for a prototype planar orthomode transducer (OMT)-coupled multi-color KID array optimized for 220/270 GHz frequency bands. These devices are made from silicon-on-insulator wafers to provide a low-loss substrate for the KIDs. The OMT couples the two polarizations of light from a wide-band feedhorn to separate Nb/SiN/Nb microstrip lines, which are then coupled to Al/Nb lumped-element KIDs (LEKIDs). The silicon on the backside of the OMT is etched away using deep reactive ion etch to release the OMT membrane to enable operation over a wide bandwidth. Finally, the buried oxide is removed underneath the KID capacitors in order to minimize two-level system noise and loss mitigation. We achieved a good yield (> 80%) on our prototype devices.
abstractGer	Abstract Future cosmic microwave background (CMB) experiments, including the large scale ground-based Stage Four CMB Experiment (CMB-S4), satellites, and balloons, aim to map the CMB to an unprecedented precision in order to answer several key questions in cosmology. However, to reach the target noise sensitivity, more than 100,000 detectors will be needed. Arrays of kinetic inductance detectors (KIDs) are a promising alternative for experiments that require large number of detectors due to the intrinsic multiplexing capabilities. We present the fabrication procedure for a prototype planar orthomode transducer (OMT)-coupled multi-color KID array optimized for 220/270 GHz frequency bands. These devices are made from silicon-on-insulator wafers to provide a low-loss substrate for the KIDs. The OMT couples the two polarizations of light from a wide-band feedhorn to separate Nb/SiN/Nb microstrip lines, which are then coupled to Al/Nb lumped-element KIDs (LEKIDs). The silicon on the backside of the OMT is etched away using deep reactive ion etch to release the OMT membrane to enable operation over a wide bandwidth. Finally, the buried oxide is removed underneath the KID capacitors in order to minimize two-level system noise and loss mitigation. We achieved a good yield (> 80%) on our prototype devices.
abstract_unstemmed	Abstract Future cosmic microwave background (CMB) experiments, including the large scale ground-based Stage Four CMB Experiment (CMB-S4), satellites, and balloons, aim to map the CMB to an unprecedented precision in order to answer several key questions in cosmology. However, to reach the target noise sensitivity, more than 100,000 detectors will be needed. Arrays of kinetic inductance detectors (KIDs) are a promising alternative for experiments that require large number of detectors due to the intrinsic multiplexing capabilities. We present the fabrication procedure for a prototype planar orthomode transducer (OMT)-coupled multi-color KID array optimized for 220/270 GHz frequency bands. These devices are made from silicon-on-insulator wafers to provide a low-loss substrate for the KIDs. The OMT couples the two polarizations of light from a wide-band feedhorn to separate Nb/SiN/Nb microstrip lines, which are then coupled to Al/Nb lumped-element KIDs (LEKIDs). The silicon on the backside of the OMT is etched away using deep reactive ion etch to release the OMT membrane to enable operation over a wide bandwidth. Finally, the buried oxide is removed underneath the KID capacitors in order to minimize two-level system noise and loss mitigation. We achieved a good yield (> 80%) on our prototype devices.
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title_short	Fabrication of OMT-Coupled Kinetic Inductance Detector for CMB Detection
url	https://dx.doi.org/10.1007/s10909-020-02341-5
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author2	Barry, P. S. Cecil, T. W. Shirokoff, E.
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doi_str	10.1007/s10909-020-02341-5
up_date	2024-07-03T23:35:07.498Z
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Y.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Fabrication of OMT-Coupled Kinetic Inductance Detector for CMB Detection</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2020</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Future cosmic microwave background (CMB) experiments, including the large scale ground-based Stage Four CMB Experiment (CMB-S4), satellites, and balloons, aim to map the CMB to an unprecedented precision in order to answer several key questions in cosmology. However, to reach the target noise sensitivity, more than 100,000 detectors will be needed. Arrays of kinetic inductance detectors (KIDs) are a promising alternative for experiments that require large number of detectors due to the intrinsic multiplexing capabilities. We present the fabrication procedure for a prototype planar orthomode transducer (OMT)-coupled multi-color KID array optimized for 220/270 GHz frequency bands. These devices are made from silicon-on-insulator wafers to provide a low-loss substrate for the KIDs. The OMT couples the two polarizations of light from a wide-band feedhorn to separate Nb/SiN/Nb microstrip lines, which are then coupled to Al/Nb lumped-element KIDs (LEKIDs). The silicon on the backside of the OMT is etched away using deep reactive ion etch to release the OMT membrane to enable operation over a wide bandwidth. Finally, the buried oxide is removed underneath the KID capacitors in order to minimize two-level system noise and loss mitigation. 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Fabrication of OMT-Coupled Kinetic Inductance Detector for CMB Detection

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