Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride
The relationships governing variation of the photoluminescence of graphitic carbon nitride synthesized by heat treatment of melamine in a closed air medium containing oxygen in the temperature range of 10–300 K were investigated. It was shown that the concentration of oxygen in the obtained material...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Chubenko, E. B. [verfasserIn] Baglov, A. V. [verfasserIn] Leonenya, M. S. [verfasserIn] Yablonskii, G. P. [verfasserIn] Borisenko, V. E. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2020 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of applied spectroscopy - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1965, 87(2020), 1 vom: März, Seite 9-14 |
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| Übergeordnetes Werk: |
volume:87 ; year:2020 ; number:1 ; month:03 ; pages:9-14 |
| Links: |
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| DOI / URN: |
10.1007/s10812-020-00954-y |
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| Katalog-ID: |
SPR039387445 |
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| 520 | |a The relationships governing variation of the photoluminescence of graphitic carbon nitride synthesized by heat treatment of melamine in a closed air medium containing oxygen in the temperature range of 10–300 K were investigated. It was shown that the concentration of oxygen in the obtained material 4–5 at.% increases with increase of temperature and decreases with increase in the duration of the synthesis process. By measurements at reduced temperatures right down to 10 K it was possible to resolve bands due to radiative recombination processes in the photoluminescence spectra of the graphitic carbon nitride. It was found that increase of the synthesis temperature from 500 to 600°C and also increase of the duration at the given temperature from 30 to 240 min shift the maximum in the photoluminescence spectrum from 2.74 eV into the region of lower energies to 2.71–2.67 eV. This is due to the bigger role of the molecular system formed by the π bonds of carbon and nitrogen atoms with $ sp^{2} $ hybridization and characterized by a smaller forbidden band width in the emission of light. Transitions due to recombination through oxygen-induced levels in the forbidden band of the semiconductor lead to the appearance of a "tail" in the photoluminescence spectra in the region of low energies (2.40–2.33 eV). Increase of the carbon nitride synthesis temperature to 600°C leads to a change in the structure of the energy bands and to increase of the energy of the radiative transitions as a result of increase in the degree of doping with oxygen atoms and thermal stratifi cation. | ||
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| 650 | 4 | |a photoluminescence |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Baglov, A. V. |e verfasserin |4 aut | |
| 700 | 1 | |a Leonenya, M. S. |e verfasserin |4 aut | |
| 700 | 1 | |a Yablonskii, G. P. |e verfasserin |4 aut | |
| 700 | 1 | |a Borisenko, V. E. |e verfasserin |4 aut | |
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10.1007/s10812-020-00954-y doi (DE-627)SPR039387445 (SPR)s10812-020-00954-y-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Chubenko, E. B. verfasserin aut Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The relationships governing variation of the photoluminescence of graphitic carbon nitride synthesized by heat treatment of melamine in a closed air medium containing oxygen in the temperature range of 10–300 K were investigated. It was shown that the concentration of oxygen in the obtained material 4–5 at.% increases with increase of temperature and decreases with increase in the duration of the synthesis process. By measurements at reduced temperatures right down to 10 K it was possible to resolve bands due to radiative recombination processes in the photoluminescence spectra of the graphitic carbon nitride. It was found that increase of the synthesis temperature from 500 to 600°C and also increase of the duration at the given temperature from 30 to 240 min shift the maximum in the photoluminescence spectrum from 2.74 eV into the region of lower energies to 2.71–2.67 eV. This is due to the bigger role of the molecular system formed by the π bonds of carbon and nitrogen atoms with $ sp^{2} $ hybridization and characterized by a smaller forbidden band width in the emission of light. Transitions due to recombination through oxygen-induced levels in the forbidden band of the semiconductor lead to the appearance of a "tail" in the photoluminescence spectra in the region of low energies (2.40–2.33 eV). Increase of the carbon nitride synthesis temperature to 600°C leads to a change in the structure of the energy bands and to increase of the energy of the radiative transitions as a result of increase in the degree of doping with oxygen atoms and thermal stratifi cation. carbon nitride (dpeaa)DE-He213 melamine (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 Baglov, A. V. verfasserin aut Leonenya, M. S. verfasserin aut Yablonskii, G. P. verfasserin aut Borisenko, V. E. verfasserin aut Enthalten in Journal of applied spectroscopy Dordrecht [u.a.] : Springer Science + Business Media B.V, 1965 87(2020), 1 vom: März, Seite 9-14 (DE-627)325609918 (DE-600)2037920-1 1573-8647 nnns volume:87 year:2020 number:1 month:03 pages:9-14 https://dx.doi.org/10.1007/s10812-020-00954-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 87 2020 1 03 9-14 |
| spelling |
10.1007/s10812-020-00954-y doi (DE-627)SPR039387445 (SPR)s10812-020-00954-y-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Chubenko, E. B. verfasserin aut Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The relationships governing variation of the photoluminescence of graphitic carbon nitride synthesized by heat treatment of melamine in a closed air medium containing oxygen in the temperature range of 10–300 K were investigated. It was shown that the concentration of oxygen in the obtained material 4–5 at.% increases with increase of temperature and decreases with increase in the duration of the synthesis process. By measurements at reduced temperatures right down to 10 K it was possible to resolve bands due to radiative recombination processes in the photoluminescence spectra of the graphitic carbon nitride. It was found that increase of the synthesis temperature from 500 to 600°C and also increase of the duration at the given temperature from 30 to 240 min shift the maximum in the photoluminescence spectrum from 2.74 eV into the region of lower energies to 2.71–2.67 eV. This is due to the bigger role of the molecular system formed by the π bonds of carbon and nitrogen atoms with $ sp^{2} $ hybridization and characterized by a smaller forbidden band width in the emission of light. Transitions due to recombination through oxygen-induced levels in the forbidden band of the semiconductor lead to the appearance of a "tail" in the photoluminescence spectra in the region of low energies (2.40–2.33 eV). Increase of the carbon nitride synthesis temperature to 600°C leads to a change in the structure of the energy bands and to increase of the energy of the radiative transitions as a result of increase in the degree of doping with oxygen atoms and thermal stratifi cation. carbon nitride (dpeaa)DE-He213 melamine (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 Baglov, A. V. verfasserin aut Leonenya, M. S. verfasserin aut Yablonskii, G. P. verfasserin aut Borisenko, V. E. verfasserin aut Enthalten in Journal of applied spectroscopy Dordrecht [u.a.] : Springer Science + Business Media B.V, 1965 87(2020), 1 vom: März, Seite 9-14 (DE-627)325609918 (DE-600)2037920-1 1573-8647 nnns volume:87 year:2020 number:1 month:03 pages:9-14 https://dx.doi.org/10.1007/s10812-020-00954-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 87 2020 1 03 9-14 |
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10.1007/s10812-020-00954-y doi (DE-627)SPR039387445 (SPR)s10812-020-00954-y-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Chubenko, E. B. verfasserin aut Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The relationships governing variation of the photoluminescence of graphitic carbon nitride synthesized by heat treatment of melamine in a closed air medium containing oxygen in the temperature range of 10–300 K were investigated. It was shown that the concentration of oxygen in the obtained material 4–5 at.% increases with increase of temperature and decreases with increase in the duration of the synthesis process. By measurements at reduced temperatures right down to 10 K it was possible to resolve bands due to radiative recombination processes in the photoluminescence spectra of the graphitic carbon nitride. It was found that increase of the synthesis temperature from 500 to 600°C and also increase of the duration at the given temperature from 30 to 240 min shift the maximum in the photoluminescence spectrum from 2.74 eV into the region of lower energies to 2.71–2.67 eV. This is due to the bigger role of the molecular system formed by the π bonds of carbon and nitrogen atoms with $ sp^{2} $ hybridization and characterized by a smaller forbidden band width in the emission of light. Transitions due to recombination through oxygen-induced levels in the forbidden band of the semiconductor lead to the appearance of a "tail" in the photoluminescence spectra in the region of low energies (2.40–2.33 eV). Increase of the carbon nitride synthesis temperature to 600°C leads to a change in the structure of the energy bands and to increase of the energy of the radiative transitions as a result of increase in the degree of doping with oxygen atoms and thermal stratifi cation. carbon nitride (dpeaa)DE-He213 melamine (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 Baglov, A. V. verfasserin aut Leonenya, M. S. verfasserin aut Yablonskii, G. P. verfasserin aut Borisenko, V. E. verfasserin aut Enthalten in Journal of applied spectroscopy Dordrecht [u.a.] : Springer Science + Business Media B.V, 1965 87(2020), 1 vom: März, Seite 9-14 (DE-627)325609918 (DE-600)2037920-1 1573-8647 nnns volume:87 year:2020 number:1 month:03 pages:9-14 https://dx.doi.org/10.1007/s10812-020-00954-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 87 2020 1 03 9-14 |
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10.1007/s10812-020-00954-y doi (DE-627)SPR039387445 (SPR)s10812-020-00954-y-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Chubenko, E. B. verfasserin aut Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The relationships governing variation of the photoluminescence of graphitic carbon nitride synthesized by heat treatment of melamine in a closed air medium containing oxygen in the temperature range of 10–300 K were investigated. It was shown that the concentration of oxygen in the obtained material 4–5 at.% increases with increase of temperature and decreases with increase in the duration of the synthesis process. By measurements at reduced temperatures right down to 10 K it was possible to resolve bands due to radiative recombination processes in the photoluminescence spectra of the graphitic carbon nitride. It was found that increase of the synthesis temperature from 500 to 600°C and also increase of the duration at the given temperature from 30 to 240 min shift the maximum in the photoluminescence spectrum from 2.74 eV into the region of lower energies to 2.71–2.67 eV. This is due to the bigger role of the molecular system formed by the π bonds of carbon and nitrogen atoms with $ sp^{2} $ hybridization and characterized by a smaller forbidden band width in the emission of light. Transitions due to recombination through oxygen-induced levels in the forbidden band of the semiconductor lead to the appearance of a "tail" in the photoluminescence spectra in the region of low energies (2.40–2.33 eV). Increase of the carbon nitride synthesis temperature to 600°C leads to a change in the structure of the energy bands and to increase of the energy of the radiative transitions as a result of increase in the degree of doping with oxygen atoms and thermal stratifi cation. carbon nitride (dpeaa)DE-He213 melamine (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 Baglov, A. V. verfasserin aut Leonenya, M. S. verfasserin aut Yablonskii, G. P. verfasserin aut Borisenko, V. E. verfasserin aut Enthalten in Journal of applied spectroscopy Dordrecht [u.a.] : Springer Science + Business Media B.V, 1965 87(2020), 1 vom: März, Seite 9-14 (DE-627)325609918 (DE-600)2037920-1 1573-8647 nnns volume:87 year:2020 number:1 month:03 pages:9-14 https://dx.doi.org/10.1007/s10812-020-00954-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 87 2020 1 03 9-14 |
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10.1007/s10812-020-00954-y doi (DE-627)SPR039387445 (SPR)s10812-020-00954-y-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Chubenko, E. B. verfasserin aut Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The relationships governing variation of the photoluminescence of graphitic carbon nitride synthesized by heat treatment of melamine in a closed air medium containing oxygen in the temperature range of 10–300 K were investigated. It was shown that the concentration of oxygen in the obtained material 4–5 at.% increases with increase of temperature and decreases with increase in the duration of the synthesis process. By measurements at reduced temperatures right down to 10 K it was possible to resolve bands due to radiative recombination processes in the photoluminescence spectra of the graphitic carbon nitride. It was found that increase of the synthesis temperature from 500 to 600°C and also increase of the duration at the given temperature from 30 to 240 min shift the maximum in the photoluminescence spectrum from 2.74 eV into the region of lower energies to 2.71–2.67 eV. This is due to the bigger role of the molecular system formed by the π bonds of carbon and nitrogen atoms with $ sp^{2} $ hybridization and characterized by a smaller forbidden band width in the emission of light. Transitions due to recombination through oxygen-induced levels in the forbidden band of the semiconductor lead to the appearance of a "tail" in the photoluminescence spectra in the region of low energies (2.40–2.33 eV). Increase of the carbon nitride synthesis temperature to 600°C leads to a change in the structure of the energy bands and to increase of the energy of the radiative transitions as a result of increase in the degree of doping with oxygen atoms and thermal stratifi cation. carbon nitride (dpeaa)DE-He213 melamine (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 Baglov, A. V. verfasserin aut Leonenya, M. S. verfasserin aut Yablonskii, G. P. verfasserin aut Borisenko, V. E. verfasserin aut Enthalten in Journal of applied spectroscopy Dordrecht [u.a.] : Springer Science + Business Media B.V, 1965 87(2020), 1 vom: März, Seite 9-14 (DE-627)325609918 (DE-600)2037920-1 1573-8647 nnns volume:87 year:2020 number:1 month:03 pages:9-14 https://dx.doi.org/10.1007/s10812-020-00954-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 87 2020 1 03 9-14 |
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Chubenko, E. B. @@aut@@ Baglov, A. V. @@aut@@ Leonenya, M. S. @@aut@@ Yablonskii, G. P. @@aut@@ Borisenko, V. E. @@aut@@ |
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B.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2020</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The relationships governing variation of the photoluminescence of graphitic carbon nitride synthesized by heat treatment of melamine in a closed air medium containing oxygen in the temperature range of 10–300 K were investigated. It was shown that the concentration of oxygen in the obtained material 4–5 at.% increases with increase of temperature and decreases with increase in the duration of the synthesis process. By measurements at reduced temperatures right down to 10 K it was possible to resolve bands due to radiative recombination processes in the photoluminescence spectra of the graphitic carbon nitride. It was found that increase of the synthesis temperature from 500 to 600°C and also increase of the duration at the given temperature from 30 to 240 min shift the maximum in the photoluminescence spectrum from 2.74 eV into the region of lower energies to 2.71–2.67 eV. This is due to the bigger role of the molecular system formed by the π bonds of carbon and nitrogen atoms with $ sp^{2} $ hybridization and characterized by a smaller forbidden band width in the emission of light. Transitions due to recombination through oxygen-induced levels in the forbidden band of the semiconductor lead to the appearance of a "tail" in the photoluminescence spectra in the region of low energies (2.40–2.33 eV). Increase of the carbon nitride synthesis temperature to 600°C leads to a change in the structure of the energy bands and to increase of the energy of the radiative transitions as a result of increase in the degree of doping with oxygen atoms and thermal stratifi cation.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">carbon nitride</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">melamine</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">photoluminescence</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Baglov, A. 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|
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Chubenko, E. B. |
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Chubenko, E. B. ddc 530 bkl 33.00 misc carbon nitride misc melamine misc photoluminescence Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride |
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530 ASE 33.00 bkl Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride carbon nitride (dpeaa)DE-He213 melamine (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 |
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ddc 530 bkl 33.00 misc carbon nitride misc melamine misc photoluminescence |
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ddc 530 bkl 33.00 misc carbon nitride misc melamine misc photoluminescence |
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Elektronische Aufsätze Aufsätze Elektronische Ressource |
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Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride |
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Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride |
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Chubenko, E. B. |
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Journal of applied spectroscopy |
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Chubenko, E. B. Baglov, A. V. Leonenya, M. S. Yablonskii, G. P. Borisenko, V. E. |
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verfasserin |
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structure of photoluminescence spectra of oxygen-doped graphitic carbon nitride |
| title_auth |
Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride |
| abstract |
The relationships governing variation of the photoluminescence of graphitic carbon nitride synthesized by heat treatment of melamine in a closed air medium containing oxygen in the temperature range of 10–300 K were investigated. It was shown that the concentration of oxygen in the obtained material 4–5 at.% increases with increase of temperature and decreases with increase in the duration of the synthesis process. By measurements at reduced temperatures right down to 10 K it was possible to resolve bands due to radiative recombination processes in the photoluminescence spectra of the graphitic carbon nitride. It was found that increase of the synthesis temperature from 500 to 600°C and also increase of the duration at the given temperature from 30 to 240 min shift the maximum in the photoluminescence spectrum from 2.74 eV into the region of lower energies to 2.71–2.67 eV. This is due to the bigger role of the molecular system formed by the π bonds of carbon and nitrogen atoms with $ sp^{2} $ hybridization and characterized by a smaller forbidden band width in the emission of light. Transitions due to recombination through oxygen-induced levels in the forbidden band of the semiconductor lead to the appearance of a "tail" in the photoluminescence spectra in the region of low energies (2.40–2.33 eV). Increase of the carbon nitride synthesis temperature to 600°C leads to a change in the structure of the energy bands and to increase of the energy of the radiative transitions as a result of increase in the degree of doping with oxygen atoms and thermal stratifi cation. |
| abstractGer |
The relationships governing variation of the photoluminescence of graphitic carbon nitride synthesized by heat treatment of melamine in a closed air medium containing oxygen in the temperature range of 10–300 K were investigated. It was shown that the concentration of oxygen in the obtained material 4–5 at.% increases with increase of temperature and decreases with increase in the duration of the synthesis process. By measurements at reduced temperatures right down to 10 K it was possible to resolve bands due to radiative recombination processes in the photoluminescence spectra of the graphitic carbon nitride. It was found that increase of the synthesis temperature from 500 to 600°C and also increase of the duration at the given temperature from 30 to 240 min shift the maximum in the photoluminescence spectrum from 2.74 eV into the region of lower energies to 2.71–2.67 eV. This is due to the bigger role of the molecular system formed by the π bonds of carbon and nitrogen atoms with $ sp^{2} $ hybridization and characterized by a smaller forbidden band width in the emission of light. Transitions due to recombination through oxygen-induced levels in the forbidden band of the semiconductor lead to the appearance of a "tail" in the photoluminescence spectra in the region of low energies (2.40–2.33 eV). Increase of the carbon nitride synthesis temperature to 600°C leads to a change in the structure of the energy bands and to increase of the energy of the radiative transitions as a result of increase in the degree of doping with oxygen atoms and thermal stratifi cation. |
| abstract_unstemmed |
The relationships governing variation of the photoluminescence of graphitic carbon nitride synthesized by heat treatment of melamine in a closed air medium containing oxygen in the temperature range of 10–300 K were investigated. It was shown that the concentration of oxygen in the obtained material 4–5 at.% increases with increase of temperature and decreases with increase in the duration of the synthesis process. By measurements at reduced temperatures right down to 10 K it was possible to resolve bands due to radiative recombination processes in the photoluminescence spectra of the graphitic carbon nitride. It was found that increase of the synthesis temperature from 500 to 600°C and also increase of the duration at the given temperature from 30 to 240 min shift the maximum in the photoluminescence spectrum from 2.74 eV into the region of lower energies to 2.71–2.67 eV. This is due to the bigger role of the molecular system formed by the π bonds of carbon and nitrogen atoms with $ sp^{2} $ hybridization and characterized by a smaller forbidden band width in the emission of light. Transitions due to recombination through oxygen-induced levels in the forbidden band of the semiconductor lead to the appearance of a "tail" in the photoluminescence spectra in the region of low energies (2.40–2.33 eV). Increase of the carbon nitride synthesis temperature to 600°C leads to a change in the structure of the energy bands and to increase of the energy of the radiative transitions as a result of increase in the degree of doping with oxygen atoms and thermal stratifi cation. |
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Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride |
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Baglov, A. V. Leonenya, M. S. Yablonskii, G. P. Borisenko, V. E. |
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| score |
7.397312 |