Electronic band energy of a bent ZnO piezoelectric semiconductor nanowire
Abstract The electric band energy variation in a bent piezoelectric semiconductor (PSC) nanowire of circular cross-section induced by the mechanical force is analyzed based on a six-band k · p method. The electric-mechanical fields are first obtained analytically in a cantilever bent PSC nanowire by...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Yang, Wanli [verfasserIn] Hu, Yuantai [verfasserIn] Pan, E. N. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2020 |
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| Übergeordnetes Werk: |
Enthalten in: Applied mathematics and mechanics - Dordrecht [u.a.] : Springer, 1980, 41(2020), 6 vom: 15. Mai, Seite 833-844 |
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| Übergeordnetes Werk: |
volume:41 ; year:2020 ; number:6 ; day:15 ; month:05 ; pages:833-844 |
| Links: |
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| DOI / URN: |
10.1007/s10483-020-2619-7 |
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| Katalog-ID: |
SPR039896501 |
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| 520 | |a Abstract The electric band energy variation in a bent piezoelectric semiconductor (PSC) nanowire of circular cross-section induced by the mechanical force is analyzed based on a six-band k · p method. The electric-mechanical fields are first obtained analytically in a cantilever bent PSC nanowire by solving the fully-coupled electro-mechanical equations. Then, the band energy is acquired numerically via the six-band Hamiltonian. By considering further the nonlinear coupling between the piezoelectric and semiconducting quantities, the contribution of the redistribution carriers to the electric field is analyzed from the Gauss’s law. Numerical examples are carried out for an n-type ZnO nanowire in different locations induced by an applied concentrated end force. These include the electric potential, heavy hole (HH), light hole (LH), spin-orbit split-off (SO), and conduction band (CB) edges along the axial and thickness directions. Our results show that the applied force has a significant effect on the band energies. For instance, on the bottom surface along the axial direction, the bandgaps near the fixed end are greater than those near the loading end, and this trend is reversed on the top surface. Moreover, at a fixed axial location, the energy level of the lower side can be enhanced by applying a bending force at the end. The present results could be of significant guidance to the electronic devices and piezotronics. | ||
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| 700 | 1 | |a Pan, E. N. |e verfasserin |4 aut | |
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10.1007/s10483-020-2619-7 doi (DE-627)SPR039896501 (SPR)s10483-020-2619-7-e DE-627 ger DE-627 rakwb eng 510 ASE 31.80 bkl 50.31 bkl Yang, Wanli verfasserin aut Electronic band energy of a bent ZnO piezoelectric semiconductor nanowire 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The electric band energy variation in a bent piezoelectric semiconductor (PSC) nanowire of circular cross-section induced by the mechanical force is analyzed based on a six-band k · p method. The electric-mechanical fields are first obtained analytically in a cantilever bent PSC nanowire by solving the fully-coupled electro-mechanical equations. Then, the band energy is acquired numerically via the six-band Hamiltonian. By considering further the nonlinear coupling between the piezoelectric and semiconducting quantities, the contribution of the redistribution carriers to the electric field is analyzed from the Gauss’s law. Numerical examples are carried out for an n-type ZnO nanowire in different locations induced by an applied concentrated end force. These include the electric potential, heavy hole (HH), light hole (LH), spin-orbit split-off (SO), and conduction band (CB) edges along the axial and thickness directions. Our results show that the applied force has a significant effect on the band energies. For instance, on the bottom surface along the axial direction, the bandgaps near the fixed end are greater than those near the loading end, and this trend is reversed on the top surface. Moreover, at a fixed axial location, the energy level of the lower side can be enhanced by applying a bending force at the end. The present results could be of significant guidance to the electronic devices and piezotronics. Hu, Yuantai verfasserin aut Pan, E. N. verfasserin aut Enthalten in Applied mathematics and mechanics Dordrecht [u.a.] : Springer, 1980 41(2020), 6 vom: 15. Mai, Seite 833-844 (DE-627)325294887 (DE-600)2035105-7 1573-2754 nnns volume:41 year:2020 number:6 day:15 month:05 pages:833-844 https://dx.doi.org/10.1007/s10483-020-2619-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 31.80 ASE 50.31 ASE AR 41 2020 6 15 05 833-844 |
| spelling |
10.1007/s10483-020-2619-7 doi (DE-627)SPR039896501 (SPR)s10483-020-2619-7-e DE-627 ger DE-627 rakwb eng 510 ASE 31.80 bkl 50.31 bkl Yang, Wanli verfasserin aut Electronic band energy of a bent ZnO piezoelectric semiconductor nanowire 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The electric band energy variation in a bent piezoelectric semiconductor (PSC) nanowire of circular cross-section induced by the mechanical force is analyzed based on a six-band k · p method. The electric-mechanical fields are first obtained analytically in a cantilever bent PSC nanowire by solving the fully-coupled electro-mechanical equations. Then, the band energy is acquired numerically via the six-band Hamiltonian. By considering further the nonlinear coupling between the piezoelectric and semiconducting quantities, the contribution of the redistribution carriers to the electric field is analyzed from the Gauss’s law. Numerical examples are carried out for an n-type ZnO nanowire in different locations induced by an applied concentrated end force. These include the electric potential, heavy hole (HH), light hole (LH), spin-orbit split-off (SO), and conduction band (CB) edges along the axial and thickness directions. Our results show that the applied force has a significant effect on the band energies. For instance, on the bottom surface along the axial direction, the bandgaps near the fixed end are greater than those near the loading end, and this trend is reversed on the top surface. Moreover, at a fixed axial location, the energy level of the lower side can be enhanced by applying a bending force at the end. The present results could be of significant guidance to the electronic devices and piezotronics. Hu, Yuantai verfasserin aut Pan, E. N. verfasserin aut Enthalten in Applied mathematics and mechanics Dordrecht [u.a.] : Springer, 1980 41(2020), 6 vom: 15. Mai, Seite 833-844 (DE-627)325294887 (DE-600)2035105-7 1573-2754 nnns volume:41 year:2020 number:6 day:15 month:05 pages:833-844 https://dx.doi.org/10.1007/s10483-020-2619-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 31.80 ASE 50.31 ASE AR 41 2020 6 15 05 833-844 |
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10.1007/s10483-020-2619-7 doi (DE-627)SPR039896501 (SPR)s10483-020-2619-7-e DE-627 ger DE-627 rakwb eng 510 ASE 31.80 bkl 50.31 bkl Yang, Wanli verfasserin aut Electronic band energy of a bent ZnO piezoelectric semiconductor nanowire 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The electric band energy variation in a bent piezoelectric semiconductor (PSC) nanowire of circular cross-section induced by the mechanical force is analyzed based on a six-band k · p method. The electric-mechanical fields are first obtained analytically in a cantilever bent PSC nanowire by solving the fully-coupled electro-mechanical equations. Then, the band energy is acquired numerically via the six-band Hamiltonian. By considering further the nonlinear coupling between the piezoelectric and semiconducting quantities, the contribution of the redistribution carriers to the electric field is analyzed from the Gauss’s law. Numerical examples are carried out for an n-type ZnO nanowire in different locations induced by an applied concentrated end force. These include the electric potential, heavy hole (HH), light hole (LH), spin-orbit split-off (SO), and conduction band (CB) edges along the axial and thickness directions. Our results show that the applied force has a significant effect on the band energies. For instance, on the bottom surface along the axial direction, the bandgaps near the fixed end are greater than those near the loading end, and this trend is reversed on the top surface. Moreover, at a fixed axial location, the energy level of the lower side can be enhanced by applying a bending force at the end. The present results could be of significant guidance to the electronic devices and piezotronics. Hu, Yuantai verfasserin aut Pan, E. N. verfasserin aut Enthalten in Applied mathematics and mechanics Dordrecht [u.a.] : Springer, 1980 41(2020), 6 vom: 15. Mai, Seite 833-844 (DE-627)325294887 (DE-600)2035105-7 1573-2754 nnns volume:41 year:2020 number:6 day:15 month:05 pages:833-844 https://dx.doi.org/10.1007/s10483-020-2619-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 31.80 ASE 50.31 ASE AR 41 2020 6 15 05 833-844 |
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10.1007/s10483-020-2619-7 doi (DE-627)SPR039896501 (SPR)s10483-020-2619-7-e DE-627 ger DE-627 rakwb eng 510 ASE 31.80 bkl 50.31 bkl Yang, Wanli verfasserin aut Electronic band energy of a bent ZnO piezoelectric semiconductor nanowire 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The electric band energy variation in a bent piezoelectric semiconductor (PSC) nanowire of circular cross-section induced by the mechanical force is analyzed based on a six-band k · p method. The electric-mechanical fields are first obtained analytically in a cantilever bent PSC nanowire by solving the fully-coupled electro-mechanical equations. Then, the band energy is acquired numerically via the six-band Hamiltonian. By considering further the nonlinear coupling between the piezoelectric and semiconducting quantities, the contribution of the redistribution carriers to the electric field is analyzed from the Gauss’s law. Numerical examples are carried out for an n-type ZnO nanowire in different locations induced by an applied concentrated end force. These include the electric potential, heavy hole (HH), light hole (LH), spin-orbit split-off (SO), and conduction band (CB) edges along the axial and thickness directions. Our results show that the applied force has a significant effect on the band energies. For instance, on the bottom surface along the axial direction, the bandgaps near the fixed end are greater than those near the loading end, and this trend is reversed on the top surface. Moreover, at a fixed axial location, the energy level of the lower side can be enhanced by applying a bending force at the end. The present results could be of significant guidance to the electronic devices and piezotronics. Hu, Yuantai verfasserin aut Pan, E. N. verfasserin aut Enthalten in Applied mathematics and mechanics Dordrecht [u.a.] : Springer, 1980 41(2020), 6 vom: 15. Mai, Seite 833-844 (DE-627)325294887 (DE-600)2035105-7 1573-2754 nnns volume:41 year:2020 number:6 day:15 month:05 pages:833-844 https://dx.doi.org/10.1007/s10483-020-2619-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 31.80 ASE 50.31 ASE AR 41 2020 6 15 05 833-844 |
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10.1007/s10483-020-2619-7 doi (DE-627)SPR039896501 (SPR)s10483-020-2619-7-e DE-627 ger DE-627 rakwb eng 510 ASE 31.80 bkl 50.31 bkl Yang, Wanli verfasserin aut Electronic band energy of a bent ZnO piezoelectric semiconductor nanowire 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The electric band energy variation in a bent piezoelectric semiconductor (PSC) nanowire of circular cross-section induced by the mechanical force is analyzed based on a six-band k · p method. The electric-mechanical fields are first obtained analytically in a cantilever bent PSC nanowire by solving the fully-coupled electro-mechanical equations. Then, the band energy is acquired numerically via the six-band Hamiltonian. By considering further the nonlinear coupling between the piezoelectric and semiconducting quantities, the contribution of the redistribution carriers to the electric field is analyzed from the Gauss’s law. Numerical examples are carried out for an n-type ZnO nanowire in different locations induced by an applied concentrated end force. These include the electric potential, heavy hole (HH), light hole (LH), spin-orbit split-off (SO), and conduction band (CB) edges along the axial and thickness directions. Our results show that the applied force has a significant effect on the band energies. For instance, on the bottom surface along the axial direction, the bandgaps near the fixed end are greater than those near the loading end, and this trend is reversed on the top surface. Moreover, at a fixed axial location, the energy level of the lower side can be enhanced by applying a bending force at the end. The present results could be of significant guidance to the electronic devices and piezotronics. Hu, Yuantai verfasserin aut Pan, E. N. verfasserin aut Enthalten in Applied mathematics and mechanics Dordrecht [u.a.] : Springer, 1980 41(2020), 6 vom: 15. Mai, Seite 833-844 (DE-627)325294887 (DE-600)2035105-7 1573-2754 nnns volume:41 year:2020 number:6 day:15 month:05 pages:833-844 https://dx.doi.org/10.1007/s10483-020-2619-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 31.80 ASE 50.31 ASE AR 41 2020 6 15 05 833-844 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR039896501</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220110220413.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201007s2020 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10483-020-2619-7</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR039896501</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10483-020-2619-7-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">510</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">31.80</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.31</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Yang, Wanli</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electronic band energy of a bent ZnO piezoelectric semiconductor nanowire</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2020</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The electric band energy variation in a bent piezoelectric semiconductor (PSC) nanowire of circular cross-section induced by the mechanical force is analyzed based on a six-band k · p method. The electric-mechanical fields are first obtained analytically in a cantilever bent PSC nanowire by solving the fully-coupled electro-mechanical equations. Then, the band energy is acquired numerically via the six-band Hamiltonian. By considering further the nonlinear coupling between the piezoelectric and semiconducting quantities, the contribution of the redistribution carriers to the electric field is analyzed from the Gauss’s law. Numerical examples are carried out for an n-type ZnO nanowire in different locations induced by an applied concentrated end force. These include the electric potential, heavy hole (HH), light hole (LH), spin-orbit split-off (SO), and conduction band (CB) edges along the axial and thickness directions. Our results show that the applied force has a significant effect on the band energies. For instance, on the bottom surface along the axial direction, the bandgaps near the fixed end are greater than those near the loading end, and this trend is reversed on the top surface. Moreover, at a fixed axial location, the energy level of the lower side can be enhanced by applying a bending force at the end. The present results could be of significant guidance to the electronic devices and piezotronics.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hu, Yuantai</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pan, E. 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Yang, Wanli |
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Electronic band energy of a bent ZnO piezoelectric semiconductor nanowire |
| abstract |
Abstract The electric band energy variation in a bent piezoelectric semiconductor (PSC) nanowire of circular cross-section induced by the mechanical force is analyzed based on a six-band k · p method. The electric-mechanical fields are first obtained analytically in a cantilever bent PSC nanowire by solving the fully-coupled electro-mechanical equations. Then, the band energy is acquired numerically via the six-band Hamiltonian. By considering further the nonlinear coupling between the piezoelectric and semiconducting quantities, the contribution of the redistribution carriers to the electric field is analyzed from the Gauss’s law. Numerical examples are carried out for an n-type ZnO nanowire in different locations induced by an applied concentrated end force. These include the electric potential, heavy hole (HH), light hole (LH), spin-orbit split-off (SO), and conduction band (CB) edges along the axial and thickness directions. Our results show that the applied force has a significant effect on the band energies. For instance, on the bottom surface along the axial direction, the bandgaps near the fixed end are greater than those near the loading end, and this trend is reversed on the top surface. Moreover, at a fixed axial location, the energy level of the lower side can be enhanced by applying a bending force at the end. The present results could be of significant guidance to the electronic devices and piezotronics. |
| abstractGer |
Abstract The electric band energy variation in a bent piezoelectric semiconductor (PSC) nanowire of circular cross-section induced by the mechanical force is analyzed based on a six-band k · p method. The electric-mechanical fields are first obtained analytically in a cantilever bent PSC nanowire by solving the fully-coupled electro-mechanical equations. Then, the band energy is acquired numerically via the six-band Hamiltonian. By considering further the nonlinear coupling between the piezoelectric and semiconducting quantities, the contribution of the redistribution carriers to the electric field is analyzed from the Gauss’s law. Numerical examples are carried out for an n-type ZnO nanowire in different locations induced by an applied concentrated end force. These include the electric potential, heavy hole (HH), light hole (LH), spin-orbit split-off (SO), and conduction band (CB) edges along the axial and thickness directions. Our results show that the applied force has a significant effect on the band energies. For instance, on the bottom surface along the axial direction, the bandgaps near the fixed end are greater than those near the loading end, and this trend is reversed on the top surface. Moreover, at a fixed axial location, the energy level of the lower side can be enhanced by applying a bending force at the end. The present results could be of significant guidance to the electronic devices and piezotronics. |
| abstract_unstemmed |
Abstract The electric band energy variation in a bent piezoelectric semiconductor (PSC) nanowire of circular cross-section induced by the mechanical force is analyzed based on a six-band k · p method. The electric-mechanical fields are first obtained analytically in a cantilever bent PSC nanowire by solving the fully-coupled electro-mechanical equations. Then, the band energy is acquired numerically via the six-band Hamiltonian. By considering further the nonlinear coupling between the piezoelectric and semiconducting quantities, the contribution of the redistribution carriers to the electric field is analyzed from the Gauss’s law. Numerical examples are carried out for an n-type ZnO nanowire in different locations induced by an applied concentrated end force. These include the electric potential, heavy hole (HH), light hole (LH), spin-orbit split-off (SO), and conduction band (CB) edges along the axial and thickness directions. Our results show that the applied force has a significant effect on the band energies. For instance, on the bottom surface along the axial direction, the bandgaps near the fixed end are greater than those near the loading end, and this trend is reversed on the top surface. Moreover, at a fixed axial location, the energy level of the lower side can be enhanced by applying a bending force at the end. The present results could be of significant guidance to the electronic devices and piezotronics. |
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| container_issue |
6 |
| title_short |
Electronic band energy of a bent ZnO piezoelectric semiconductor nanowire |
| url |
https://dx.doi.org/10.1007/s10483-020-2619-7 |
| remote_bool |
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| author2 |
Hu, Yuantai Pan, E. N. |
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Hu, Yuantai Pan, E. N. |
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| doi_str |
10.1007/s10483-020-2619-7 |
| up_date |
2024-07-04T02:02:53.058Z |
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| score |
7.400199 |