Soft Error Hardened Asymmetric 10T SRAM Cell for Aerospace Applications

Abstract Soft error in SRAM cell is one of the major reliability concern under aerospace radiation environment. A soft error occurs in SRAM cell due to charged particle strikes on sensitive nodes. In this paper a radiation hardened asymmetric 10T (AS10T) SRAM cell is presented to enhance the soft er...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Shah, Ambika Prasad [verfasserIn] Vishvakarma, Santosh Kumar [verfasserIn] Hübner, Michael [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	SRAM cell Soft error Critical charge Static noise margin Soft error rate ratio

Übergeordnetes Werk:	Enthalten in: Journal of electronic testing - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990, 36(2020), 2 vom: 06. März, Seite 255-269
Übergeordnetes Werk:	volume:36 ; year:2020 ; number:2 ; day:06 ; month:03 ; pages:255-269

Links:	Volltext

DOI / URN:	10.1007/s10836-020-05864-7

Katalog-ID:	SPR039950395

Internformat


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520			\|a Abstract Soft error in SRAM cell is one of the major reliability concern under aerospace radiation environment. A soft error occurs in SRAM cell due to charged particle strikes on sensitive nodes. In this paper a radiation hardened asymmetric 10T (AS10T) SRAM cell is presented to enhance the soft error hardening. The proposed cell uses read decoupled path to improve read static noise margin (RSNM) and voltage booster connected between storage nodes to improve node capacitance and hence enhanced radiation hardening. The proposed AS10T cell has a 75.83% higher critical charge as compared to 6T SRAM cell. For validation of soft error hardening of the proposed cell soft error rate ratio with supply voltage and temperature change is calculated and it is found that the AS10T has 6.41× and 3.2× less soft error rate ratio compared to 6T SRAM cell respectively. To better assess soft-error resilience and performance of the cell we introduce reliability stability to energy area product (RSEAP) ratio as a performance metric. Our analysis indicates that AS10T cell has 2.83× 1.6× and 1.36× higher RSEAP as compared to 6T RD8T and AS8T SRAM cells respectively.
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matchkey_str	article:15730727:2020----::otrohreeaymti1trmeloar
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allfields	10.1007/s10836-020-05864-7 doi (DE-627)SPR039950395 (SPR)s10836-020-05864-7-e DE-627 ger DE-627 rakwb eng 004 670 ASE 54.00 bkl Shah, Ambika Prasad verfasserin aut Soft Error Hardened Asymmetric 10T SRAM Cell for Aerospace Applications 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Soft error in SRAM cell is one of the major reliability concern under aerospace radiation environment. A soft error occurs in SRAM cell due to charged particle strikes on sensitive nodes. In this paper a radiation hardened asymmetric 10T (AS10T) SRAM cell is presented to enhance the soft error hardening. The proposed cell uses read decoupled path to improve read static noise margin (RSNM) and voltage booster connected between storage nodes to improve node capacitance and hence enhanced radiation hardening. The proposed AS10T cell has a 75.83% higher critical charge as compared to 6T SRAM cell. For validation of soft error hardening of the proposed cell soft error rate ratio with supply voltage and temperature change is calculated and it is found that the AS10T has 6.41× and 3.2× less soft error rate ratio compared to 6T SRAM cell respectively. To better assess soft-error resilience and performance of the cell we introduce reliability stability to energy area product (RSEAP) ratio as a performance metric. Our analysis indicates that AS10T cell has 2.83× 1.6× and 1.36× higher RSEAP as compared to 6T RD8T and AS8T SRAM cells respectively. SRAM cell Soft error Critical charge Static noise margin Soft error rate ratio (dpeaa)DE-He213 Vishvakarma, Santosh Kumar verfasserin aut Hübner, Michael verfasserin aut Enthalten in Journal of electronic testing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 36(2020), 2 vom: 06. März, Seite 255-269 (DE-627)271348968 (DE-600)1479776-8 1573-0727 nnns volume:36 year:2020 number:2 day:06 month:03 pages:255-269 https://dx.doi.org/10.1007/s10836-020-05864-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 54.00 ASE AR 36 2020 2 06 03 255-269
spelling	10.1007/s10836-020-05864-7 doi (DE-627)SPR039950395 (SPR)s10836-020-05864-7-e DE-627 ger DE-627 rakwb eng 004 670 ASE 54.00 bkl Shah, Ambika Prasad verfasserin aut Soft Error Hardened Asymmetric 10T SRAM Cell for Aerospace Applications 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Soft error in SRAM cell is one of the major reliability concern under aerospace radiation environment. A soft error occurs in SRAM cell due to charged particle strikes on sensitive nodes. In this paper a radiation hardened asymmetric 10T (AS10T) SRAM cell is presented to enhance the soft error hardening. The proposed cell uses read decoupled path to improve read static noise margin (RSNM) and voltage booster connected between storage nodes to improve node capacitance and hence enhanced radiation hardening. The proposed AS10T cell has a 75.83% higher critical charge as compared to 6T SRAM cell. For validation of soft error hardening of the proposed cell soft error rate ratio with supply voltage and temperature change is calculated and it is found that the AS10T has 6.41× and 3.2× less soft error rate ratio compared to 6T SRAM cell respectively. To better assess soft-error resilience and performance of the cell we introduce reliability stability to energy area product (RSEAP) ratio as a performance metric. Our analysis indicates that AS10T cell has 2.83× 1.6× and 1.36× higher RSEAP as compared to 6T RD8T and AS8T SRAM cells respectively. SRAM cell Soft error Critical charge Static noise margin Soft error rate ratio (dpeaa)DE-He213 Vishvakarma, Santosh Kumar verfasserin aut Hübner, Michael verfasserin aut Enthalten in Journal of electronic testing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 36(2020), 2 vom: 06. März, Seite 255-269 (DE-627)271348968 (DE-600)1479776-8 1573-0727 nnns volume:36 year:2020 number:2 day:06 month:03 pages:255-269 https://dx.doi.org/10.1007/s10836-020-05864-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 54.00 ASE AR 36 2020 2 06 03 255-269
allfields_unstemmed	10.1007/s10836-020-05864-7 doi (DE-627)SPR039950395 (SPR)s10836-020-05864-7-e DE-627 ger DE-627 rakwb eng 004 670 ASE 54.00 bkl Shah, Ambika Prasad verfasserin aut Soft Error Hardened Asymmetric 10T SRAM Cell for Aerospace Applications 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Soft error in SRAM cell is one of the major reliability concern under aerospace radiation environment. A soft error occurs in SRAM cell due to charged particle strikes on sensitive nodes. In this paper a radiation hardened asymmetric 10T (AS10T) SRAM cell is presented to enhance the soft error hardening. The proposed cell uses read decoupled path to improve read static noise margin (RSNM) and voltage booster connected between storage nodes to improve node capacitance and hence enhanced radiation hardening. The proposed AS10T cell has a 75.83% higher critical charge as compared to 6T SRAM cell. For validation of soft error hardening of the proposed cell soft error rate ratio with supply voltage and temperature change is calculated and it is found that the AS10T has 6.41× and 3.2× less soft error rate ratio compared to 6T SRAM cell respectively. To better assess soft-error resilience and performance of the cell we introduce reliability stability to energy area product (RSEAP) ratio as a performance metric. Our analysis indicates that AS10T cell has 2.83× 1.6× and 1.36× higher RSEAP as compared to 6T RD8T and AS8T SRAM cells respectively. SRAM cell Soft error Critical charge Static noise margin Soft error rate ratio (dpeaa)DE-He213 Vishvakarma, Santosh Kumar verfasserin aut Hübner, Michael verfasserin aut Enthalten in Journal of electronic testing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 36(2020), 2 vom: 06. März, Seite 255-269 (DE-627)271348968 (DE-600)1479776-8 1573-0727 nnns volume:36 year:2020 number:2 day:06 month:03 pages:255-269 https://dx.doi.org/10.1007/s10836-020-05864-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 54.00 ASE AR 36 2020 2 06 03 255-269
allfieldsGer	10.1007/s10836-020-05864-7 doi (DE-627)SPR039950395 (SPR)s10836-020-05864-7-e DE-627 ger DE-627 rakwb eng 004 670 ASE 54.00 bkl Shah, Ambika Prasad verfasserin aut Soft Error Hardened Asymmetric 10T SRAM Cell for Aerospace Applications 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Soft error in SRAM cell is one of the major reliability concern under aerospace radiation environment. A soft error occurs in SRAM cell due to charged particle strikes on sensitive nodes. In this paper a radiation hardened asymmetric 10T (AS10T) SRAM cell is presented to enhance the soft error hardening. The proposed cell uses read decoupled path to improve read static noise margin (RSNM) and voltage booster connected between storage nodes to improve node capacitance and hence enhanced radiation hardening. The proposed AS10T cell has a 75.83% higher critical charge as compared to 6T SRAM cell. For validation of soft error hardening of the proposed cell soft error rate ratio with supply voltage and temperature change is calculated and it is found that the AS10T has 6.41× and 3.2× less soft error rate ratio compared to 6T SRAM cell respectively. To better assess soft-error resilience and performance of the cell we introduce reliability stability to energy area product (RSEAP) ratio as a performance metric. Our analysis indicates that AS10T cell has 2.83× 1.6× and 1.36× higher RSEAP as compared to 6T RD8T and AS8T SRAM cells respectively. SRAM cell Soft error Critical charge Static noise margin Soft error rate ratio (dpeaa)DE-He213 Vishvakarma, Santosh Kumar verfasserin aut Hübner, Michael verfasserin aut Enthalten in Journal of electronic testing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 36(2020), 2 vom: 06. März, Seite 255-269 (DE-627)271348968 (DE-600)1479776-8 1573-0727 nnns volume:36 year:2020 number:2 day:06 month:03 pages:255-269 https://dx.doi.org/10.1007/s10836-020-05864-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 54.00 ASE AR 36 2020 2 06 03 255-269
allfieldsSound	10.1007/s10836-020-05864-7 doi (DE-627)SPR039950395 (SPR)s10836-020-05864-7-e DE-627 ger DE-627 rakwb eng 004 670 ASE 54.00 bkl Shah, Ambika Prasad verfasserin aut Soft Error Hardened Asymmetric 10T SRAM Cell for Aerospace Applications 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Soft error in SRAM cell is one of the major reliability concern under aerospace radiation environment. A soft error occurs in SRAM cell due to charged particle strikes on sensitive nodes. In this paper a radiation hardened asymmetric 10T (AS10T) SRAM cell is presented to enhance the soft error hardening. The proposed cell uses read decoupled path to improve read static noise margin (RSNM) and voltage booster connected between storage nodes to improve node capacitance and hence enhanced radiation hardening. The proposed AS10T cell has a 75.83% higher critical charge as compared to 6T SRAM cell. For validation of soft error hardening of the proposed cell soft error rate ratio with supply voltage and temperature change is calculated and it is found that the AS10T has 6.41× and 3.2× less soft error rate ratio compared to 6T SRAM cell respectively. To better assess soft-error resilience and performance of the cell we introduce reliability stability to energy area product (RSEAP) ratio as a performance metric. Our analysis indicates that AS10T cell has 2.83× 1.6× and 1.36× higher RSEAP as compared to 6T RD8T and AS8T SRAM cells respectively. SRAM cell Soft error Critical charge Static noise margin Soft error rate ratio (dpeaa)DE-He213 Vishvakarma, Santosh Kumar verfasserin aut Hübner, Michael verfasserin aut Enthalten in Journal of electronic testing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 36(2020), 2 vom: 06. März, Seite 255-269 (DE-627)271348968 (DE-600)1479776-8 1573-0727 nnns volume:36 year:2020 number:2 day:06 month:03 pages:255-269 https://dx.doi.org/10.1007/s10836-020-05864-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 54.00 ASE AR 36 2020 2 06 03 255-269
language	English
source	Enthalten in Journal of electronic testing 36(2020), 2 vom: 06. März, Seite 255-269 volume:36 year:2020 number:2 day:06 month:03 pages:255-269
sourceStr	Enthalten in Journal of electronic testing 36(2020), 2 vom: 06. März, Seite 255-269 volume:36 year:2020 number:2 day:06 month:03 pages:255-269
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	SRAM cell Soft error Critical charge Static noise margin Soft error rate ratio
dewey-raw	004
isfreeaccess_bool	false
container_title	Journal of electronic testing
authorswithroles_txt_mv	Shah, Ambika Prasad @@aut@@ Vishvakarma, Santosh Kumar @@aut@@ Hübner, Michael @@aut@@
publishDateDaySort_date	2020-03-06T00:00:00Z
hierarchy_top_id	271348968
dewey-sort	14
id	SPR039950395
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR039950395</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220111005030.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201007s2020 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10836-020-05864-7</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR039950395</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10836-020-05864-7-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">004</subfield><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">54.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Shah, Ambika Prasad</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Soft Error Hardened Asymmetric 10T SRAM Cell for Aerospace Applications</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2020</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Soft error in SRAM cell is one of the major reliability concern under aerospace radiation environment. A soft error occurs in SRAM cell due to charged particle strikes on sensitive nodes. In this paper a radiation hardened asymmetric 10T (AS10T) SRAM cell is presented to enhance the soft error hardening. The proposed cell uses read decoupled path to improve read static noise margin (RSNM) and voltage booster connected between storage nodes to improve node capacitance and hence enhanced radiation hardening. The proposed AS10T cell has a 75.83% higher critical charge as compared to 6T SRAM cell. For validation of soft error hardening of the proposed cell soft error rate ratio with supply voltage and temperature change is calculated and it is found that the AS10T has 6.41× and 3.2× less soft error rate ratio compared to 6T SRAM cell respectively. To better assess soft-error resilience and performance of the cell we introduce reliability stability to energy area product (RSEAP) ratio as a performance metric. 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author	Shah, Ambika Prasad
spellingShingle	Shah, Ambika Prasad ddc 004 bkl 54.00 misc SRAM cell Soft error Critical charge Static noise margin Soft error rate ratio Soft Error Hardened Asymmetric 10T SRAM Cell for Aerospace Applications
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topic_title	004 670 ASE 54.00 bkl Soft Error Hardened Asymmetric 10T SRAM Cell for Aerospace Applications SRAM cell Soft error Critical charge Static noise margin Soft error rate ratio (dpeaa)DE-He213
topic	ddc 004 bkl 54.00 misc SRAM cell Soft error Critical charge Static noise margin Soft error rate ratio
topic_unstemmed	ddc 004 bkl 54.00 misc SRAM cell Soft error Critical charge Static noise margin Soft error rate ratio
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title	Soft Error Hardened Asymmetric 10T SRAM Cell for Aerospace Applications
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title_full	Soft Error Hardened Asymmetric 10T SRAM Cell for Aerospace Applications
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title_sort	soft error hardened asymmetric 10t sram cell for aerospace applications
title_auth	Soft Error Hardened Asymmetric 10T SRAM Cell for Aerospace Applications
abstract	Abstract Soft error in SRAM cell is one of the major reliability concern under aerospace radiation environment. A soft error occurs in SRAM cell due to charged particle strikes on sensitive nodes. In this paper a radiation hardened asymmetric 10T (AS10T) SRAM cell is presented to enhance the soft error hardening. The proposed cell uses read decoupled path to improve read static noise margin (RSNM) and voltage booster connected between storage nodes to improve node capacitance and hence enhanced radiation hardening. The proposed AS10T cell has a 75.83% higher critical charge as compared to 6T SRAM cell. For validation of soft error hardening of the proposed cell soft error rate ratio with supply voltage and temperature change is calculated and it is found that the AS10T has 6.41× and 3.2× less soft error rate ratio compared to 6T SRAM cell respectively. To better assess soft-error resilience and performance of the cell we introduce reliability stability to energy area product (RSEAP) ratio as a performance metric. Our analysis indicates that AS10T cell has 2.83× 1.6× and 1.36× higher RSEAP as compared to 6T RD8T and AS8T SRAM cells respectively.
abstractGer	Abstract Soft error in SRAM cell is one of the major reliability concern under aerospace radiation environment. A soft error occurs in SRAM cell due to charged particle strikes on sensitive nodes. In this paper a radiation hardened asymmetric 10T (AS10T) SRAM cell is presented to enhance the soft error hardening. The proposed cell uses read decoupled path to improve read static noise margin (RSNM) and voltage booster connected between storage nodes to improve node capacitance and hence enhanced radiation hardening. The proposed AS10T cell has a 75.83% higher critical charge as compared to 6T SRAM cell. For validation of soft error hardening of the proposed cell soft error rate ratio with supply voltage and temperature change is calculated and it is found that the AS10T has 6.41× and 3.2× less soft error rate ratio compared to 6T SRAM cell respectively. To better assess soft-error resilience and performance of the cell we introduce reliability stability to energy area product (RSEAP) ratio as a performance metric. Our analysis indicates that AS10T cell has 2.83× 1.6× and 1.36× higher RSEAP as compared to 6T RD8T and AS8T SRAM cells respectively.
abstract_unstemmed	Abstract Soft error in SRAM cell is one of the major reliability concern under aerospace radiation environment. A soft error occurs in SRAM cell due to charged particle strikes on sensitive nodes. In this paper a radiation hardened asymmetric 10T (AS10T) SRAM cell is presented to enhance the soft error hardening. The proposed cell uses read decoupled path to improve read static noise margin (RSNM) and voltage booster connected between storage nodes to improve node capacitance and hence enhanced radiation hardening. The proposed AS10T cell has a 75.83% higher critical charge as compared to 6T SRAM cell. For validation of soft error hardening of the proposed cell soft error rate ratio with supply voltage and temperature change is calculated and it is found that the AS10T has 6.41× and 3.2× less soft error rate ratio compared to 6T SRAM cell respectively. To better assess soft-error resilience and performance of the cell we introduce reliability stability to energy area product (RSEAP) ratio as a performance metric. Our analysis indicates that AS10T cell has 2.83× 1.6× and 1.36× higher RSEAP as compared to 6T RD8T and AS8T SRAM cells respectively.
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container_issue	2
title_short	Soft Error Hardened Asymmetric 10T SRAM Cell for Aerospace Applications
url	https://dx.doi.org/10.1007/s10836-020-05864-7
remote_bool	true
author2	Vishvakarma, Santosh Kumar Hübner, Michael
author2Str	Vishvakarma, Santosh Kumar Hübner, Michael
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doi_str	10.1007/s10836-020-05864-7
up_date	2024-07-04T02:16:04.864Z
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