A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices
Abstract In the fabrication of InAlAs/InGaAs metamorphic high-electron-mobility transistor (mHEMT), the determination of whether etching has been completed to the desired gate recess depth is made by measuring whether the drain current through the channel layer has reached the target current. Non-un...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Min, Byoung-Gue [verfasserIn] Chang, Sung-Jae [verfasserIn] Jung, Hyun-Wook [verfasserIn] Yoon, Hyung Sup [verfasserIn] Lee, Jong-Min [verfasserIn] Jang, Woo-Jin [verfasserIn] Kang, Dong-Min [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2020 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of the Korean Physical Society - Berlin : Springer, 1968, 77(2020), 2 vom: Juli, Seite 122-126 |
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| Übergeordnetes Werk: |
volume:77 ; year:2020 ; number:2 ; month:07 ; pages:122-126 |
| Links: |
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| DOI / URN: |
10.3938/jkps.77.122 |
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| Katalog-ID: |
SPR04050249X |
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| 245 | 1 | 2 | |a A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices |
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| 520 | |a Abstract In the fabrication of InAlAs/InGaAs metamorphic high-electron-mobility transistor (mHEMT), the determination of whether etching has been completed to the desired gate recess depth is made by measuring whether the drain current through the channel layer has reached the target current. Non-uniformity of the etching rate occurs during wet etching with citric acid. In this study, the cause of that non-uniformity was investigated. We confirmed that an electrochemical potential caused by the electrolyte of the etching solution was induced between the ohmic electrode and the epitaxial layer of the recess region, resulting in a non-uniform etching rate. In particular, the case where the Au of an ohmic electrode is exposed by the monitor window for the measuring channel current was considered. The gate recess etch rate was changed by the presence, location and size of the photoresist openings on the ohmic electrodes. | ||
| 650 | 4 | |a InAlAs/InGaAs |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a mHEMT |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Gate |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Recess |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Chang, Sung-Jae |e verfasserin |4 aut | |
| 700 | 1 | |a Jung, Hyun-Wook |e verfasserin |4 aut | |
| 700 | 1 | |a Yoon, Hyung Sup |e verfasserin |4 aut | |
| 700 | 1 | |a Lee, Jong-Min |e verfasserin |4 aut | |
| 700 | 1 | |a Jang, Woo-Jin |e verfasserin |4 aut | |
| 700 | 1 | |a Kang, Dong-Min |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of the Korean Physical Society |d Berlin : Springer, 1968 |g 77(2020), 2 vom: Juli, Seite 122-126 |w (DE-627)328820865 |w (DE-600)2046361-3 |x 1976-8524 |7 nnns |
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| 856 | 4 | 0 | |u https://dx.doi.org/10.3938/jkps.77.122 |z lizenzpflichtig |3 Volltext |
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10.3938/jkps.77.122 doi (DE-627)SPR04050249X (SPR)jkps.77.122-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Min, Byoung-Gue verfasserin aut A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In the fabrication of InAlAs/InGaAs metamorphic high-electron-mobility transistor (mHEMT), the determination of whether etching has been completed to the desired gate recess depth is made by measuring whether the drain current through the channel layer has reached the target current. Non-uniformity of the etching rate occurs during wet etching with citric acid. In this study, the cause of that non-uniformity was investigated. We confirmed that an electrochemical potential caused by the electrolyte of the etching solution was induced between the ohmic electrode and the epitaxial layer of the recess region, resulting in a non-uniform etching rate. In particular, the case where the Au of an ohmic electrode is exposed by the monitor window for the measuring channel current was considered. The gate recess etch rate was changed by the presence, location and size of the photoresist openings on the ohmic electrodes. InAlAs/InGaAs (dpeaa)DE-He213 mHEMT (dpeaa)DE-He213 Gate (dpeaa)DE-He213 Recess (dpeaa)DE-He213 Chang, Sung-Jae verfasserin aut Jung, Hyun-Wook verfasserin aut Yoon, Hyung Sup verfasserin aut Lee, Jong-Min verfasserin aut Jang, Woo-Jin verfasserin aut Kang, Dong-Min verfasserin aut Enthalten in Journal of the Korean Physical Society Berlin : Springer, 1968 77(2020), 2 vom: Juli, Seite 122-126 (DE-627)328820865 (DE-600)2046361-3 1976-8524 nnns volume:77 year:2020 number:2 month:07 pages:122-126 https://dx.doi.org/10.3938/jkps.77.122 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 77 2020 2 07 122-126 |
| spelling |
10.3938/jkps.77.122 doi (DE-627)SPR04050249X (SPR)jkps.77.122-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Min, Byoung-Gue verfasserin aut A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In the fabrication of InAlAs/InGaAs metamorphic high-electron-mobility transistor (mHEMT), the determination of whether etching has been completed to the desired gate recess depth is made by measuring whether the drain current through the channel layer has reached the target current. Non-uniformity of the etching rate occurs during wet etching with citric acid. In this study, the cause of that non-uniformity was investigated. We confirmed that an electrochemical potential caused by the electrolyte of the etching solution was induced between the ohmic electrode and the epitaxial layer of the recess region, resulting in a non-uniform etching rate. In particular, the case where the Au of an ohmic electrode is exposed by the monitor window for the measuring channel current was considered. The gate recess etch rate was changed by the presence, location and size of the photoresist openings on the ohmic electrodes. InAlAs/InGaAs (dpeaa)DE-He213 mHEMT (dpeaa)DE-He213 Gate (dpeaa)DE-He213 Recess (dpeaa)DE-He213 Chang, Sung-Jae verfasserin aut Jung, Hyun-Wook verfasserin aut Yoon, Hyung Sup verfasserin aut Lee, Jong-Min verfasserin aut Jang, Woo-Jin verfasserin aut Kang, Dong-Min verfasserin aut Enthalten in Journal of the Korean Physical Society Berlin : Springer, 1968 77(2020), 2 vom: Juli, Seite 122-126 (DE-627)328820865 (DE-600)2046361-3 1976-8524 nnns volume:77 year:2020 number:2 month:07 pages:122-126 https://dx.doi.org/10.3938/jkps.77.122 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 77 2020 2 07 122-126 |
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10.3938/jkps.77.122 doi (DE-627)SPR04050249X (SPR)jkps.77.122-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Min, Byoung-Gue verfasserin aut A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In the fabrication of InAlAs/InGaAs metamorphic high-electron-mobility transistor (mHEMT), the determination of whether etching has been completed to the desired gate recess depth is made by measuring whether the drain current through the channel layer has reached the target current. Non-uniformity of the etching rate occurs during wet etching with citric acid. In this study, the cause of that non-uniformity was investigated. We confirmed that an electrochemical potential caused by the electrolyte of the etching solution was induced between the ohmic electrode and the epitaxial layer of the recess region, resulting in a non-uniform etching rate. In particular, the case where the Au of an ohmic electrode is exposed by the monitor window for the measuring channel current was considered. The gate recess etch rate was changed by the presence, location and size of the photoresist openings on the ohmic electrodes. InAlAs/InGaAs (dpeaa)DE-He213 mHEMT (dpeaa)DE-He213 Gate (dpeaa)DE-He213 Recess (dpeaa)DE-He213 Chang, Sung-Jae verfasserin aut Jung, Hyun-Wook verfasserin aut Yoon, Hyung Sup verfasserin aut Lee, Jong-Min verfasserin aut Jang, Woo-Jin verfasserin aut Kang, Dong-Min verfasserin aut Enthalten in Journal of the Korean Physical Society Berlin : Springer, 1968 77(2020), 2 vom: Juli, Seite 122-126 (DE-627)328820865 (DE-600)2046361-3 1976-8524 nnns volume:77 year:2020 number:2 month:07 pages:122-126 https://dx.doi.org/10.3938/jkps.77.122 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 77 2020 2 07 122-126 |
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10.3938/jkps.77.122 doi (DE-627)SPR04050249X (SPR)jkps.77.122-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Min, Byoung-Gue verfasserin aut A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In the fabrication of InAlAs/InGaAs metamorphic high-electron-mobility transistor (mHEMT), the determination of whether etching has been completed to the desired gate recess depth is made by measuring whether the drain current through the channel layer has reached the target current. Non-uniformity of the etching rate occurs during wet etching with citric acid. In this study, the cause of that non-uniformity was investigated. We confirmed that an electrochemical potential caused by the electrolyte of the etching solution was induced between the ohmic electrode and the epitaxial layer of the recess region, resulting in a non-uniform etching rate. In particular, the case where the Au of an ohmic electrode is exposed by the monitor window for the measuring channel current was considered. The gate recess etch rate was changed by the presence, location and size of the photoresist openings on the ohmic electrodes. InAlAs/InGaAs (dpeaa)DE-He213 mHEMT (dpeaa)DE-He213 Gate (dpeaa)DE-He213 Recess (dpeaa)DE-He213 Chang, Sung-Jae verfasserin aut Jung, Hyun-Wook verfasserin aut Yoon, Hyung Sup verfasserin aut Lee, Jong-Min verfasserin aut Jang, Woo-Jin verfasserin aut Kang, Dong-Min verfasserin aut Enthalten in Journal of the Korean Physical Society Berlin : Springer, 1968 77(2020), 2 vom: Juli, Seite 122-126 (DE-627)328820865 (DE-600)2046361-3 1976-8524 nnns volume:77 year:2020 number:2 month:07 pages:122-126 https://dx.doi.org/10.3938/jkps.77.122 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 77 2020 2 07 122-126 |
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10.3938/jkps.77.122 doi (DE-627)SPR04050249X (SPR)jkps.77.122-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Min, Byoung-Gue verfasserin aut A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In the fabrication of InAlAs/InGaAs metamorphic high-electron-mobility transistor (mHEMT), the determination of whether etching has been completed to the desired gate recess depth is made by measuring whether the drain current through the channel layer has reached the target current. Non-uniformity of the etching rate occurs during wet etching with citric acid. In this study, the cause of that non-uniformity was investigated. We confirmed that an electrochemical potential caused by the electrolyte of the etching solution was induced between the ohmic electrode and the epitaxial layer of the recess region, resulting in a non-uniform etching rate. In particular, the case where the Au of an ohmic electrode is exposed by the monitor window for the measuring channel current was considered. The gate recess etch rate was changed by the presence, location and size of the photoresist openings on the ohmic electrodes. InAlAs/InGaAs (dpeaa)DE-He213 mHEMT (dpeaa)DE-He213 Gate (dpeaa)DE-He213 Recess (dpeaa)DE-He213 Chang, Sung-Jae verfasserin aut Jung, Hyun-Wook verfasserin aut Yoon, Hyung Sup verfasserin aut Lee, Jong-Min verfasserin aut Jang, Woo-Jin verfasserin aut Kang, Dong-Min verfasserin aut Enthalten in Journal of the Korean Physical Society Berlin : Springer, 1968 77(2020), 2 vom: Juli, Seite 122-126 (DE-627)328820865 (DE-600)2046361-3 1976-8524 nnns volume:77 year:2020 number:2 month:07 pages:122-126 https://dx.doi.org/10.3938/jkps.77.122 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 77 2020 2 07 122-126 |
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Enthalten in Journal of the Korean Physical Society 77(2020), 2 vom: Juli, Seite 122-126 volume:77 year:2020 number:2 month:07 pages:122-126 |
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Min, Byoung-Gue @@aut@@ Chang, Sung-Jae @@aut@@ Jung, Hyun-Wook @@aut@@ Yoon, Hyung Sup @@aut@@ Lee, Jong-Min @@aut@@ Jang, Woo-Jin @@aut@@ Kang, Dong-Min @@aut@@ |
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Min, Byoung-Gue |
| spellingShingle |
Min, Byoung-Gue ddc 530 bkl 33.00 misc InAlAs/InGaAs misc mHEMT misc Gate misc Recess A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices |
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530 ASE 33.00 bkl A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices InAlAs/InGaAs (dpeaa)DE-He213 mHEMT (dpeaa)DE-He213 Gate (dpeaa)DE-He213 Recess (dpeaa)DE-He213 |
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ddc 530 bkl 33.00 misc InAlAs/InGaAs misc mHEMT misc Gate misc Recess |
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ddc 530 bkl 33.00 misc InAlAs/InGaAs misc mHEMT misc Gate misc Recess |
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A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices |
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A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices |
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Min, Byoung-Gue |
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Min, Byoung-Gue Chang, Sung-Jae Jung, Hyun-Wook Yoon, Hyung Sup Lee, Jong-Min Jang, Woo-Jin Kang, Dong-Min |
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study on the behavior of gate recess etch by photoresist openings on ohmic electrode in inalas/ingaas mhemt devices |
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A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices |
| abstract |
Abstract In the fabrication of InAlAs/InGaAs metamorphic high-electron-mobility transistor (mHEMT), the determination of whether etching has been completed to the desired gate recess depth is made by measuring whether the drain current through the channel layer has reached the target current. Non-uniformity of the etching rate occurs during wet etching with citric acid. In this study, the cause of that non-uniformity was investigated. We confirmed that an electrochemical potential caused by the electrolyte of the etching solution was induced between the ohmic electrode and the epitaxial layer of the recess region, resulting in a non-uniform etching rate. In particular, the case where the Au of an ohmic electrode is exposed by the monitor window for the measuring channel current was considered. The gate recess etch rate was changed by the presence, location and size of the photoresist openings on the ohmic electrodes. |
| abstractGer |
Abstract In the fabrication of InAlAs/InGaAs metamorphic high-electron-mobility transistor (mHEMT), the determination of whether etching has been completed to the desired gate recess depth is made by measuring whether the drain current through the channel layer has reached the target current. Non-uniformity of the etching rate occurs during wet etching with citric acid. In this study, the cause of that non-uniformity was investigated. We confirmed that an electrochemical potential caused by the electrolyte of the etching solution was induced between the ohmic electrode and the epitaxial layer of the recess region, resulting in a non-uniform etching rate. In particular, the case where the Au of an ohmic electrode is exposed by the monitor window for the measuring channel current was considered. The gate recess etch rate was changed by the presence, location and size of the photoresist openings on the ohmic electrodes. |
| abstract_unstemmed |
Abstract In the fabrication of InAlAs/InGaAs metamorphic high-electron-mobility transistor (mHEMT), the determination of whether etching has been completed to the desired gate recess depth is made by measuring whether the drain current through the channel layer has reached the target current. Non-uniformity of the etching rate occurs during wet etching with citric acid. In this study, the cause of that non-uniformity was investigated. We confirmed that an electrochemical potential caused by the electrolyte of the etching solution was induced between the ohmic electrode and the epitaxial layer of the recess region, resulting in a non-uniform etching rate. In particular, the case where the Au of an ohmic electrode is exposed by the monitor window for the measuring channel current was considered. The gate recess etch rate was changed by the presence, location and size of the photoresist openings on the ohmic electrodes. |
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A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices |
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https://dx.doi.org/10.3938/jkps.77.122 |
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Chang, Sung-Jae Jung, Hyun-Wook Yoon, Hyung Sup Lee, Jong-Min Jang, Woo-Jin Kang, Dong-Min |
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Chang, Sung-Jae Jung, Hyun-Wook Yoon, Hyung Sup Lee, Jong-Min Jang, Woo-Jin Kang, Dong-Min |
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10.3938/jkps.77.122 |
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2024-07-03T16:25:32.258Z |
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| score |
7.3991537 |