Development of an Application Specific Integrated Circuit for Signal Detection in Experimental Studies of Fast Processes

Abstract This paper presents a new integrated circuit designed for signal readout in a silicon microstrip detector in experimental observations of fast processes at a synchrotron radiation beam. The first variants of this circuit were used in a prototype detector based on a microstrip silicon sensor...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Aulchenko, V. M. [verfasserIn] Zhulanov, V. V. [verfasserIn] Shekhtman, L. I. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	synchrotron radiation microstrip silicon detector fast processes application specific integrated circuit

Übergeordnetes Werk:	Enthalten in: Optoelectronics, instrumentation and data processing - New York, NY : Allerton Press, 2007, 56(2020), 1 vom: Jan., Seite 81-88
Übergeordnetes Werk:	volume:56 ; year:2020 ; number:1 ; month:01 ; pages:81-88

Links:	Volltext

DOI / URN:	10.3103/S8756699020010112

Katalog-ID:	SPR04056679X

Internformat


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520			\|a Abstract This paper presents a new integrated circuit designed for signal readout in a silicon microstrip detector in experimental observations of fast processes at a synchrotron radiation beam. The first variants of this circuit were used in a prototype detector based on a microstrip silicon sensor and were tested at an intense synchrotron radiation beam at the VEPP-4M storage ring in the Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences. The results of the first measurements showed that the main objectives of this development were achieved: the time resolution and frame rate satisfy the initial specifications and the maximum detected signal in a linear mode of operation provides a significant increase in the detected photon flux compared to the previous version of the detector based on gas technology. The main problem detected during testing of the prototype is the relatively high noise level, which will be reduced in the next version of the integrated circuit by optimizing some circuit solutions.
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912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
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912			\|a GBV_ILN_2021
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author_variant	v m a vm vma v v z vv vvz l i s li lis
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allfields	10.3103/S8756699020010112 doi (DE-627)SPR04056679X (SPR)S8756699020010112-e DE-627 ger DE-627 rakwb eng 620 660 ASE Aulchenko, V. M. verfasserin aut Development of an Application Specific Integrated Circuit for Signal Detection in Experimental Studies of Fast Processes 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper presents a new integrated circuit designed for signal readout in a silicon microstrip detector in experimental observations of fast processes at a synchrotron radiation beam. The first variants of this circuit were used in a prototype detector based on a microstrip silicon sensor and were tested at an intense synchrotron radiation beam at the VEPP-4M storage ring in the Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences. The results of the first measurements showed that the main objectives of this development were achieved: the time resolution and frame rate satisfy the initial specifications and the maximum detected signal in a linear mode of operation provides a significant increase in the detected photon flux compared to the previous version of the detector based on gas technology. The main problem detected during testing of the prototype is the relatively high noise level, which will be reduced in the next version of the integrated circuit by optimizing some circuit solutions. synchrotron radiation (dpeaa)DE-He213 microstrip silicon detector (dpeaa)DE-He213 fast processes (dpeaa)DE-He213 application specific integrated circuit (dpeaa)DE-He213 Zhulanov, V. V. verfasserin aut Shekhtman, L. I. verfasserin aut Enthalten in Optoelectronics, instrumentation and data processing New York, NY : Allerton Press, 2007 56(2020), 1 vom: Jan., Seite 81-88 (DE-627)531199916 (DE-600)2322600-6 1934-7944 nnns volume:56 year:2020 number:1 month:01 pages:81-88 https://dx.doi.org/10.3103/S8756699020010112 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 56 2020 1 01 81-88
spelling	10.3103/S8756699020010112 doi (DE-627)SPR04056679X (SPR)S8756699020010112-e DE-627 ger DE-627 rakwb eng 620 660 ASE Aulchenko, V. M. verfasserin aut Development of an Application Specific Integrated Circuit for Signal Detection in Experimental Studies of Fast Processes 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper presents a new integrated circuit designed for signal readout in a silicon microstrip detector in experimental observations of fast processes at a synchrotron radiation beam. The first variants of this circuit were used in a prototype detector based on a microstrip silicon sensor and were tested at an intense synchrotron radiation beam at the VEPP-4M storage ring in the Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences. The results of the first measurements showed that the main objectives of this development were achieved: the time resolution and frame rate satisfy the initial specifications and the maximum detected signal in a linear mode of operation provides a significant increase in the detected photon flux compared to the previous version of the detector based on gas technology. The main problem detected during testing of the prototype is the relatively high noise level, which will be reduced in the next version of the integrated circuit by optimizing some circuit solutions. synchrotron radiation (dpeaa)DE-He213 microstrip silicon detector (dpeaa)DE-He213 fast processes (dpeaa)DE-He213 application specific integrated circuit (dpeaa)DE-He213 Zhulanov, V. V. verfasserin aut Shekhtman, L. I. verfasserin aut Enthalten in Optoelectronics, instrumentation and data processing New York, NY : Allerton Press, 2007 56(2020), 1 vom: Jan., Seite 81-88 (DE-627)531199916 (DE-600)2322600-6 1934-7944 nnns volume:56 year:2020 number:1 month:01 pages:81-88 https://dx.doi.org/10.3103/S8756699020010112 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 56 2020 1 01 81-88
allfields_unstemmed	10.3103/S8756699020010112 doi (DE-627)SPR04056679X (SPR)S8756699020010112-e DE-627 ger DE-627 rakwb eng 620 660 ASE Aulchenko, V. M. verfasserin aut Development of an Application Specific Integrated Circuit for Signal Detection in Experimental Studies of Fast Processes 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper presents a new integrated circuit designed for signal readout in a silicon microstrip detector in experimental observations of fast processes at a synchrotron radiation beam. The first variants of this circuit were used in a prototype detector based on a microstrip silicon sensor and were tested at an intense synchrotron radiation beam at the VEPP-4M storage ring in the Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences. The results of the first measurements showed that the main objectives of this development were achieved: the time resolution and frame rate satisfy the initial specifications and the maximum detected signal in a linear mode of operation provides a significant increase in the detected photon flux compared to the previous version of the detector based on gas technology. The main problem detected during testing of the prototype is the relatively high noise level, which will be reduced in the next version of the integrated circuit by optimizing some circuit solutions. synchrotron radiation (dpeaa)DE-He213 microstrip silicon detector (dpeaa)DE-He213 fast processes (dpeaa)DE-He213 application specific integrated circuit (dpeaa)DE-He213 Zhulanov, V. V. verfasserin aut Shekhtman, L. I. verfasserin aut Enthalten in Optoelectronics, instrumentation and data processing New York, NY : Allerton Press, 2007 56(2020), 1 vom: Jan., Seite 81-88 (DE-627)531199916 (DE-600)2322600-6 1934-7944 nnns volume:56 year:2020 number:1 month:01 pages:81-88 https://dx.doi.org/10.3103/S8756699020010112 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 56 2020 1 01 81-88
allfieldsGer	10.3103/S8756699020010112 doi (DE-627)SPR04056679X (SPR)S8756699020010112-e DE-627 ger DE-627 rakwb eng 620 660 ASE Aulchenko, V. M. verfasserin aut Development of an Application Specific Integrated Circuit for Signal Detection in Experimental Studies of Fast Processes 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper presents a new integrated circuit designed for signal readout in a silicon microstrip detector in experimental observations of fast processes at a synchrotron radiation beam. The first variants of this circuit were used in a prototype detector based on a microstrip silicon sensor and were tested at an intense synchrotron radiation beam at the VEPP-4M storage ring in the Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences. The results of the first measurements showed that the main objectives of this development were achieved: the time resolution and frame rate satisfy the initial specifications and the maximum detected signal in a linear mode of operation provides a significant increase in the detected photon flux compared to the previous version of the detector based on gas technology. The main problem detected during testing of the prototype is the relatively high noise level, which will be reduced in the next version of the integrated circuit by optimizing some circuit solutions. synchrotron radiation (dpeaa)DE-He213 microstrip silicon detector (dpeaa)DE-He213 fast processes (dpeaa)DE-He213 application specific integrated circuit (dpeaa)DE-He213 Zhulanov, V. V. verfasserin aut Shekhtman, L. I. verfasserin aut Enthalten in Optoelectronics, instrumentation and data processing New York, NY : Allerton Press, 2007 56(2020), 1 vom: Jan., Seite 81-88 (DE-627)531199916 (DE-600)2322600-6 1934-7944 nnns volume:56 year:2020 number:1 month:01 pages:81-88 https://dx.doi.org/10.3103/S8756699020010112 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 56 2020 1 01 81-88
allfieldsSound	10.3103/S8756699020010112 doi (DE-627)SPR04056679X (SPR)S8756699020010112-e DE-627 ger DE-627 rakwb eng 620 660 ASE Aulchenko, V. M. verfasserin aut Development of an Application Specific Integrated Circuit for Signal Detection in Experimental Studies of Fast Processes 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper presents a new integrated circuit designed for signal readout in a silicon microstrip detector in experimental observations of fast processes at a synchrotron radiation beam. The first variants of this circuit were used in a prototype detector based on a microstrip silicon sensor and were tested at an intense synchrotron radiation beam at the VEPP-4M storage ring in the Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences. The results of the first measurements showed that the main objectives of this development were achieved: the time resolution and frame rate satisfy the initial specifications and the maximum detected signal in a linear mode of operation provides a significant increase in the detected photon flux compared to the previous version of the detector based on gas technology. The main problem detected during testing of the prototype is the relatively high noise level, which will be reduced in the next version of the integrated circuit by optimizing some circuit solutions. synchrotron radiation (dpeaa)DE-He213 microstrip silicon detector (dpeaa)DE-He213 fast processes (dpeaa)DE-He213 application specific integrated circuit (dpeaa)DE-He213 Zhulanov, V. V. verfasserin aut Shekhtman, L. I. verfasserin aut Enthalten in Optoelectronics, instrumentation and data processing New York, NY : Allerton Press, 2007 56(2020), 1 vom: Jan., Seite 81-88 (DE-627)531199916 (DE-600)2322600-6 1934-7944 nnns volume:56 year:2020 number:1 month:01 pages:81-88 https://dx.doi.org/10.3103/S8756699020010112 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 56 2020 1 01 81-88
language	English
source	Enthalten in Optoelectronics, instrumentation and data processing 56(2020), 1 vom: Jan., Seite 81-88 volume:56 year:2020 number:1 month:01 pages:81-88
sourceStr	Enthalten in Optoelectronics, instrumentation and data processing 56(2020), 1 vom: Jan., Seite 81-88 volume:56 year:2020 number:1 month:01 pages:81-88
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	synchrotron radiation microstrip silicon detector fast processes application specific integrated circuit
dewey-raw	620
isfreeaccess_bool	false
container_title	Optoelectronics, instrumentation and data processing
authorswithroles_txt_mv	Aulchenko, V. M. @@aut@@ Zhulanov, V. V. @@aut@@ Shekhtman, L. I. @@aut@@
publishDateDaySort_date	2020-01-01T00:00:00Z
hierarchy_top_id	531199916
dewey-sort	3620
id	SPR04056679X
language_de	englisch
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author	Aulchenko, V. M.
spellingShingle	Aulchenko, V. M. ddc 620 misc synchrotron radiation misc microstrip silicon detector misc fast processes misc application specific integrated circuit Development of an Application Specific Integrated Circuit for Signal Detection in Experimental Studies of Fast Processes
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topic_title	620 660 ASE Development of an Application Specific Integrated Circuit for Signal Detection in Experimental Studies of Fast Processes synchrotron radiation (dpeaa)DE-He213 microstrip silicon detector (dpeaa)DE-He213 fast processes (dpeaa)DE-He213 application specific integrated circuit (dpeaa)DE-He213
topic	ddc 620 misc synchrotron radiation misc microstrip silicon detector misc fast processes misc application specific integrated circuit
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title	Development of an Application Specific Integrated Circuit for Signal Detection in Experimental Studies of Fast Processes
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title_full	Development of an Application Specific Integrated Circuit for Signal Detection in Experimental Studies of Fast Processes
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title_sort	development of an application specific integrated circuit for signal detection in experimental studies of fast processes
title_auth	Development of an Application Specific Integrated Circuit for Signal Detection in Experimental Studies of Fast Processes
abstract	Abstract This paper presents a new integrated circuit designed for signal readout in a silicon microstrip detector in experimental observations of fast processes at a synchrotron radiation beam. The first variants of this circuit were used in a prototype detector based on a microstrip silicon sensor and were tested at an intense synchrotron radiation beam at the VEPP-4M storage ring in the Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences. The results of the first measurements showed that the main objectives of this development were achieved: the time resolution and frame rate satisfy the initial specifications and the maximum detected signal in a linear mode of operation provides a significant increase in the detected photon flux compared to the previous version of the detector based on gas technology. The main problem detected during testing of the prototype is the relatively high noise level, which will be reduced in the next version of the integrated circuit by optimizing some circuit solutions.
abstractGer	Abstract This paper presents a new integrated circuit designed for signal readout in a silicon microstrip detector in experimental observations of fast processes at a synchrotron radiation beam. The first variants of this circuit were used in a prototype detector based on a microstrip silicon sensor and were tested at an intense synchrotron radiation beam at the VEPP-4M storage ring in the Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences. The results of the first measurements showed that the main objectives of this development were achieved: the time resolution and frame rate satisfy the initial specifications and the maximum detected signal in a linear mode of operation provides a significant increase in the detected photon flux compared to the previous version of the detector based on gas technology. The main problem detected during testing of the prototype is the relatively high noise level, which will be reduced in the next version of the integrated circuit by optimizing some circuit solutions.
abstract_unstemmed	Abstract This paper presents a new integrated circuit designed for signal readout in a silicon microstrip detector in experimental observations of fast processes at a synchrotron radiation beam. The first variants of this circuit were used in a prototype detector based on a microstrip silicon sensor and were tested at an intense synchrotron radiation beam at the VEPP-4M storage ring in the Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences. The results of the first measurements showed that the main objectives of this development were achieved: the time resolution and frame rate satisfy the initial specifications and the maximum detected signal in a linear mode of operation provides a significant increase in the detected photon flux compared to the previous version of the detector based on gas technology. The main problem detected during testing of the prototype is the relatively high noise level, which will be reduced in the next version of the integrated circuit by optimizing some circuit solutions.
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title_short	Development of an Application Specific Integrated Circuit for Signal Detection in Experimental Studies of Fast Processes
url	https://dx.doi.org/10.3103/S8756699020010112
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up_date	2024-07-03T16:50:12.368Z
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fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR04056679X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230520003055.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201007s2020 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3103/S8756699020010112</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR04056679X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)S8756699020010112-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="a">660</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Aulchenko, V. M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Development of an Application Specific Integrated Circuit for Signal Detection in Experimental Studies of Fast Processes</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2020</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract This paper presents a new integrated circuit designed for signal readout in a silicon microstrip detector in experimental observations of fast processes at a synchrotron radiation beam. The first variants of this circuit were used in a prototype detector based on a microstrip silicon sensor and were tested at an intense synchrotron radiation beam at the VEPP-4M storage ring in the Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences. The results of the first measurements showed that the main objectives of this development were achieved: the time resolution and frame rate satisfy the initial specifications and the maximum detected signal in a linear mode of operation provides a significant increase in the detected photon flux compared to the previous version of the detector based on gas technology. The main problem detected during testing of the prototype is the relatively high noise level, which will be reduced in the next version of the integrated circuit by optimizing some circuit solutions.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">synchrotron radiation</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">microstrip silicon detector</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">fast processes</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">application specific integrated circuit</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhulanov, V. 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Development of an Application Specific Integrated Circuit for Signal Detection in Experimental Studies of Fast Processes

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