Chemical Vapor Transport Deposition of Stable Cubic $ CsPbI_{3} $ Optical Films on the Porous Alumina Substrate
Abstract Cesium lead iodide perovskite ($ CsPbI_{3} $) with excellent optical and electrical properties have attracted numerous academic attentions. Specifically, the black cubic phase $ CsPbI_{3} $ with a direct band gap of 1.74 eV has been most appropriate materials for various optoelectronic appl...
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| Autor*in: |
Zhao, Cong [verfasserIn] Zhao, Shichao [verfasserIn] Zhao, Yuanfang [verfasserIn] He, Fang [verfasserIn] Luo, Ripeng [verfasserIn] Li, Jingzhou [verfasserIn] Zhao, Shixi [verfasserIn] Wei, Guodan [verfasserIn] Kang, Feiyu [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Übergeordnetes Werk: |
Enthalten in: MRS advances - Cham : Springer Nature Switzerland AG, 2016, 4(2019), 36 vom: Juli, Seite 1973-1979 |
|---|---|
| Übergeordnetes Werk: |
volume:4 ; year:2019 ; number:36 ; month:07 ; pages:1973-1979 |
| Links: |
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| DOI / URN: |
10.1557/adv.2019.171 |
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SPR041069765 |
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| 520 | |a Abstract Cesium lead iodide perovskite ($ CsPbI_{3} $) with excellent optical and electrical properties have attracted numerous academic attentions. Specifically, the black cubic phase $ CsPbI_{3} $ with a direct band gap of 1.74 eV has been most appropriate materials for various optoelectronic applications, especially for photovoltaic (PV), Light-Emitting Diodes (LED) and photodetector applications 1. However, the preferred cubic phase of bulk $ CsPbI_{3} $ (α-$ CsPbI_{3} $) is usually only stable at high temperatures and it will undergo an immediate phase transformation to orthorhombic phase (δ-$ CsPbI_{3} $) after fabrication at room temperature. In this work, we have discovered a convenient CVD method to investigate the growth behavior of the cubic α-$ CsPbI_{3} $ film on the porous alumina substrate. The lead iodide and cesium iodide were used as the precursors for the deposition of $ CsPbI_{3} $. The porous alumina with high surface area and large pore volume was used as growth substrate. It was shown that the porous alumina promoted the growth of $ CsPbI_{3} $ film by absorbing the precursor and increasing the nucleation density. The prepared $ CsPbI_{3} $ film emitted strong and stable red light under ultraviolet light excitation at room temperature and ambient atmosphere. The lead iodide was absorbed on the surface of the porous alumina firstly then reacted with cesium iodide to form the $ CsPbI_{3} $ The successful preparation of the $ CsPbI_{3} $ by the direct CVD method paves the way for its large scale growth and application in optoelectronic devices. | ||
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| 700 | 1 | |a Luo, Ripeng |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Jingzhou |e verfasserin |4 aut | |
| 700 | 1 | |a Zhao, Shixi |e verfasserin |4 aut | |
| 700 | 1 | |a Wei, Guodan |e verfasserin |4 aut | |
| 700 | 1 | |a Kang, Feiyu |e verfasserin |4 aut | |
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10.1557/adv.2019.171 doi (DE-627)SPR041069765 (SPR)adv.2019.171-e DE-627 ger DE-627 rakwb eng 670 ASE Zhao, Cong verfasserin aut Chemical Vapor Transport Deposition of Stable Cubic $ CsPbI_{3} $ Optical Films on the Porous Alumina Substrate 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Cesium lead iodide perovskite ($ CsPbI_{3} $) with excellent optical and electrical properties have attracted numerous academic attentions. Specifically, the black cubic phase $ CsPbI_{3} $ with a direct band gap of 1.74 eV has been most appropriate materials for various optoelectronic applications, especially for photovoltaic (PV), Light-Emitting Diodes (LED) and photodetector applications 1. However, the preferred cubic phase of bulk $ CsPbI_{3} $ (α-$ CsPbI_{3} $) is usually only stable at high temperatures and it will undergo an immediate phase transformation to orthorhombic phase (δ-$ CsPbI_{3} $) after fabrication at room temperature. In this work, we have discovered a convenient CVD method to investigate the growth behavior of the cubic α-$ CsPbI_{3} $ film on the porous alumina substrate. The lead iodide and cesium iodide were used as the precursors for the deposition of $ CsPbI_{3} $. The porous alumina with high surface area and large pore volume was used as growth substrate. It was shown that the porous alumina promoted the growth of $ CsPbI_{3} $ film by absorbing the precursor and increasing the nucleation density. The prepared $ CsPbI_{3} $ film emitted strong and stable red light under ultraviolet light excitation at room temperature and ambient atmosphere. The lead iodide was absorbed on the surface of the porous alumina firstly then reacted with cesium iodide to form the $ CsPbI_{3} $ The successful preparation of the $ CsPbI_{3} $ by the direct CVD method paves the way for its large scale growth and application in optoelectronic devices. Zhao, Shichao verfasserin aut Zhao, Yuanfang verfasserin aut He, Fang verfasserin aut Luo, Ripeng verfasserin aut Li, Jingzhou verfasserin aut Zhao, Shixi verfasserin aut Wei, Guodan verfasserin aut Kang, Feiyu verfasserin aut Enthalten in MRS advances Cham : Springer Nature Switzerland AG, 2016 4(2019), 36 vom: Juli, Seite 1973-1979 (DE-627)860869032 (DE-600)2858562-8 2059-8521 nnns volume:4 year:2019 number:36 month:07 pages:1973-1979 https://dx.doi.org/10.1557/adv.2019.171 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_602 GBV_ILN_702 GBV_ILN_2190 AR 4 2019 36 07 1973-1979 |
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10.1557/adv.2019.171 doi (DE-627)SPR041069765 (SPR)adv.2019.171-e DE-627 ger DE-627 rakwb eng 670 ASE Zhao, Cong verfasserin aut Chemical Vapor Transport Deposition of Stable Cubic $ CsPbI_{3} $ Optical Films on the Porous Alumina Substrate 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Cesium lead iodide perovskite ($ CsPbI_{3} $) with excellent optical and electrical properties have attracted numerous academic attentions. Specifically, the black cubic phase $ CsPbI_{3} $ with a direct band gap of 1.74 eV has been most appropriate materials for various optoelectronic applications, especially for photovoltaic (PV), Light-Emitting Diodes (LED) and photodetector applications 1. However, the preferred cubic phase of bulk $ CsPbI_{3} $ (α-$ CsPbI_{3} $) is usually only stable at high temperatures and it will undergo an immediate phase transformation to orthorhombic phase (δ-$ CsPbI_{3} $) after fabrication at room temperature. In this work, we have discovered a convenient CVD method to investigate the growth behavior of the cubic α-$ CsPbI_{3} $ film on the porous alumina substrate. The lead iodide and cesium iodide were used as the precursors for the deposition of $ CsPbI_{3} $. The porous alumina with high surface area and large pore volume was used as growth substrate. It was shown that the porous alumina promoted the growth of $ CsPbI_{3} $ film by absorbing the precursor and increasing the nucleation density. The prepared $ CsPbI_{3} $ film emitted strong and stable red light under ultraviolet light excitation at room temperature and ambient atmosphere. The lead iodide was absorbed on the surface of the porous alumina firstly then reacted with cesium iodide to form the $ CsPbI_{3} $ The successful preparation of the $ CsPbI_{3} $ by the direct CVD method paves the way for its large scale growth and application in optoelectronic devices. Zhao, Shichao verfasserin aut Zhao, Yuanfang verfasserin aut He, Fang verfasserin aut Luo, Ripeng verfasserin aut Li, Jingzhou verfasserin aut Zhao, Shixi verfasserin aut Wei, Guodan verfasserin aut Kang, Feiyu verfasserin aut Enthalten in MRS advances Cham : Springer Nature Switzerland AG, 2016 4(2019), 36 vom: Juli, Seite 1973-1979 (DE-627)860869032 (DE-600)2858562-8 2059-8521 nnns volume:4 year:2019 number:36 month:07 pages:1973-1979 https://dx.doi.org/10.1557/adv.2019.171 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_602 GBV_ILN_702 GBV_ILN_2190 AR 4 2019 36 07 1973-1979 |
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10.1557/adv.2019.171 doi (DE-627)SPR041069765 (SPR)adv.2019.171-e DE-627 ger DE-627 rakwb eng 670 ASE Zhao, Cong verfasserin aut Chemical Vapor Transport Deposition of Stable Cubic $ CsPbI_{3} $ Optical Films on the Porous Alumina Substrate 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Cesium lead iodide perovskite ($ CsPbI_{3} $) with excellent optical and electrical properties have attracted numerous academic attentions. Specifically, the black cubic phase $ CsPbI_{3} $ with a direct band gap of 1.74 eV has been most appropriate materials for various optoelectronic applications, especially for photovoltaic (PV), Light-Emitting Diodes (LED) and photodetector applications 1. However, the preferred cubic phase of bulk $ CsPbI_{3} $ (α-$ CsPbI_{3} $) is usually only stable at high temperatures and it will undergo an immediate phase transformation to orthorhombic phase (δ-$ CsPbI_{3} $) after fabrication at room temperature. In this work, we have discovered a convenient CVD method to investigate the growth behavior of the cubic α-$ CsPbI_{3} $ film on the porous alumina substrate. The lead iodide and cesium iodide were used as the precursors for the deposition of $ CsPbI_{3} $. The porous alumina with high surface area and large pore volume was used as growth substrate. It was shown that the porous alumina promoted the growth of $ CsPbI_{3} $ film by absorbing the precursor and increasing the nucleation density. The prepared $ CsPbI_{3} $ film emitted strong and stable red light under ultraviolet light excitation at room temperature and ambient atmosphere. The lead iodide was absorbed on the surface of the porous alumina firstly then reacted with cesium iodide to form the $ CsPbI_{3} $ The successful preparation of the $ CsPbI_{3} $ by the direct CVD method paves the way for its large scale growth and application in optoelectronic devices. Zhao, Shichao verfasserin aut Zhao, Yuanfang verfasserin aut He, Fang verfasserin aut Luo, Ripeng verfasserin aut Li, Jingzhou verfasserin aut Zhao, Shixi verfasserin aut Wei, Guodan verfasserin aut Kang, Feiyu verfasserin aut Enthalten in MRS advances Cham : Springer Nature Switzerland AG, 2016 4(2019), 36 vom: Juli, Seite 1973-1979 (DE-627)860869032 (DE-600)2858562-8 2059-8521 nnns volume:4 year:2019 number:36 month:07 pages:1973-1979 https://dx.doi.org/10.1557/adv.2019.171 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_602 GBV_ILN_702 GBV_ILN_2190 AR 4 2019 36 07 1973-1979 |
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10.1557/adv.2019.171 doi (DE-627)SPR041069765 (SPR)adv.2019.171-e DE-627 ger DE-627 rakwb eng 670 ASE Zhao, Cong verfasserin aut Chemical Vapor Transport Deposition of Stable Cubic $ CsPbI_{3} $ Optical Films on the Porous Alumina Substrate 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Cesium lead iodide perovskite ($ CsPbI_{3} $) with excellent optical and electrical properties have attracted numerous academic attentions. Specifically, the black cubic phase $ CsPbI_{3} $ with a direct band gap of 1.74 eV has been most appropriate materials for various optoelectronic applications, especially for photovoltaic (PV), Light-Emitting Diodes (LED) and photodetector applications 1. However, the preferred cubic phase of bulk $ CsPbI_{3} $ (α-$ CsPbI_{3} $) is usually only stable at high temperatures and it will undergo an immediate phase transformation to orthorhombic phase (δ-$ CsPbI_{3} $) after fabrication at room temperature. In this work, we have discovered a convenient CVD method to investigate the growth behavior of the cubic α-$ CsPbI_{3} $ film on the porous alumina substrate. The lead iodide and cesium iodide were used as the precursors for the deposition of $ CsPbI_{3} $. The porous alumina with high surface area and large pore volume was used as growth substrate. It was shown that the porous alumina promoted the growth of $ CsPbI_{3} $ film by absorbing the precursor and increasing the nucleation density. The prepared $ CsPbI_{3} $ film emitted strong and stable red light under ultraviolet light excitation at room temperature and ambient atmosphere. The lead iodide was absorbed on the surface of the porous alumina firstly then reacted with cesium iodide to form the $ CsPbI_{3} $ The successful preparation of the $ CsPbI_{3} $ by the direct CVD method paves the way for its large scale growth and application in optoelectronic devices. Zhao, Shichao verfasserin aut Zhao, Yuanfang verfasserin aut He, Fang verfasserin aut Luo, Ripeng verfasserin aut Li, Jingzhou verfasserin aut Zhao, Shixi verfasserin aut Wei, Guodan verfasserin aut Kang, Feiyu verfasserin aut Enthalten in MRS advances Cham : Springer Nature Switzerland AG, 2016 4(2019), 36 vom: Juli, Seite 1973-1979 (DE-627)860869032 (DE-600)2858562-8 2059-8521 nnns volume:4 year:2019 number:36 month:07 pages:1973-1979 https://dx.doi.org/10.1557/adv.2019.171 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_602 GBV_ILN_702 GBV_ILN_2190 AR 4 2019 36 07 1973-1979 |
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10.1557/adv.2019.171 doi (DE-627)SPR041069765 (SPR)adv.2019.171-e DE-627 ger DE-627 rakwb eng 670 ASE Zhao, Cong verfasserin aut Chemical Vapor Transport Deposition of Stable Cubic $ CsPbI_{3} $ Optical Films on the Porous Alumina Substrate 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Cesium lead iodide perovskite ($ CsPbI_{3} $) with excellent optical and electrical properties have attracted numerous academic attentions. Specifically, the black cubic phase $ CsPbI_{3} $ with a direct band gap of 1.74 eV has been most appropriate materials for various optoelectronic applications, especially for photovoltaic (PV), Light-Emitting Diodes (LED) and photodetector applications 1. However, the preferred cubic phase of bulk $ CsPbI_{3} $ (α-$ CsPbI_{3} $) is usually only stable at high temperatures and it will undergo an immediate phase transformation to orthorhombic phase (δ-$ CsPbI_{3} $) after fabrication at room temperature. In this work, we have discovered a convenient CVD method to investigate the growth behavior of the cubic α-$ CsPbI_{3} $ film on the porous alumina substrate. The lead iodide and cesium iodide were used as the precursors for the deposition of $ CsPbI_{3} $. The porous alumina with high surface area and large pore volume was used as growth substrate. It was shown that the porous alumina promoted the growth of $ CsPbI_{3} $ film by absorbing the precursor and increasing the nucleation density. The prepared $ CsPbI_{3} $ film emitted strong and stable red light under ultraviolet light excitation at room temperature and ambient atmosphere. The lead iodide was absorbed on the surface of the porous alumina firstly then reacted with cesium iodide to form the $ CsPbI_{3} $ The successful preparation of the $ CsPbI_{3} $ by the direct CVD method paves the way for its large scale growth and application in optoelectronic devices. Zhao, Shichao verfasserin aut Zhao, Yuanfang verfasserin aut He, Fang verfasserin aut Luo, Ripeng verfasserin aut Li, Jingzhou verfasserin aut Zhao, Shixi verfasserin aut Wei, Guodan verfasserin aut Kang, Feiyu verfasserin aut Enthalten in MRS advances Cham : Springer Nature Switzerland AG, 2016 4(2019), 36 vom: Juli, Seite 1973-1979 (DE-627)860869032 (DE-600)2858562-8 2059-8521 nnns volume:4 year:2019 number:36 month:07 pages:1973-1979 https://dx.doi.org/10.1557/adv.2019.171 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_602 GBV_ILN_702 GBV_ILN_2190 AR 4 2019 36 07 1973-1979 |
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670 ASE Chemical Vapor Transport Deposition of Stable Cubic $ CsPbI_{3} $ Optical Films on the Porous Alumina Substrate |
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Chemical Vapor Transport Deposition of Stable Cubic $ CsPbI_{3} $ Optical Films on the Porous Alumina Substrate |
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(DE-627)SPR041069765 (SPR)adv.2019.171-e |
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Chemical Vapor Transport Deposition of Stable Cubic $ CsPbI_{3} $ Optical Films on the Porous Alumina Substrate |
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Zhao, Cong |
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Zhao, Cong Zhao, Shichao Zhao, Yuanfang He, Fang Luo, Ripeng Li, Jingzhou Zhao, Shixi Wei, Guodan Kang, Feiyu |
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Elektronische Aufsätze |
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10.1557/adv.2019.171 |
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chemical vapor transport deposition of stable cubic $ cspbi_{3} $ optical films on the porous alumina substrate |
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Chemical Vapor Transport Deposition of Stable Cubic $ CsPbI_{3} $ Optical Films on the Porous Alumina Substrate |
| abstract |
Abstract Cesium lead iodide perovskite ($ CsPbI_{3} $) with excellent optical and electrical properties have attracted numerous academic attentions. Specifically, the black cubic phase $ CsPbI_{3} $ with a direct band gap of 1.74 eV has been most appropriate materials for various optoelectronic applications, especially for photovoltaic (PV), Light-Emitting Diodes (LED) and photodetector applications 1. However, the preferred cubic phase of bulk $ CsPbI_{3} $ (α-$ CsPbI_{3} $) is usually only stable at high temperatures and it will undergo an immediate phase transformation to orthorhombic phase (δ-$ CsPbI_{3} $) after fabrication at room temperature. In this work, we have discovered a convenient CVD method to investigate the growth behavior of the cubic α-$ CsPbI_{3} $ film on the porous alumina substrate. The lead iodide and cesium iodide were used as the precursors for the deposition of $ CsPbI_{3} $. The porous alumina with high surface area and large pore volume was used as growth substrate. It was shown that the porous alumina promoted the growth of $ CsPbI_{3} $ film by absorbing the precursor and increasing the nucleation density. The prepared $ CsPbI_{3} $ film emitted strong and stable red light under ultraviolet light excitation at room temperature and ambient atmosphere. The lead iodide was absorbed on the surface of the porous alumina firstly then reacted with cesium iodide to form the $ CsPbI_{3} $ The successful preparation of the $ CsPbI_{3} $ by the direct CVD method paves the way for its large scale growth and application in optoelectronic devices. |
| abstractGer |
Abstract Cesium lead iodide perovskite ($ CsPbI_{3} $) with excellent optical and electrical properties have attracted numerous academic attentions. Specifically, the black cubic phase $ CsPbI_{3} $ with a direct band gap of 1.74 eV has been most appropriate materials for various optoelectronic applications, especially for photovoltaic (PV), Light-Emitting Diodes (LED) and photodetector applications 1. However, the preferred cubic phase of bulk $ CsPbI_{3} $ (α-$ CsPbI_{3} $) is usually only stable at high temperatures and it will undergo an immediate phase transformation to orthorhombic phase (δ-$ CsPbI_{3} $) after fabrication at room temperature. In this work, we have discovered a convenient CVD method to investigate the growth behavior of the cubic α-$ CsPbI_{3} $ film on the porous alumina substrate. The lead iodide and cesium iodide were used as the precursors for the deposition of $ CsPbI_{3} $. The porous alumina with high surface area and large pore volume was used as growth substrate. It was shown that the porous alumina promoted the growth of $ CsPbI_{3} $ film by absorbing the precursor and increasing the nucleation density. The prepared $ CsPbI_{3} $ film emitted strong and stable red light under ultraviolet light excitation at room temperature and ambient atmosphere. The lead iodide was absorbed on the surface of the porous alumina firstly then reacted with cesium iodide to form the $ CsPbI_{3} $ The successful preparation of the $ CsPbI_{3} $ by the direct CVD method paves the way for its large scale growth and application in optoelectronic devices. |
| abstract_unstemmed |
Abstract Cesium lead iodide perovskite ($ CsPbI_{3} $) with excellent optical and electrical properties have attracted numerous academic attentions. Specifically, the black cubic phase $ CsPbI_{3} $ with a direct band gap of 1.74 eV has been most appropriate materials for various optoelectronic applications, especially for photovoltaic (PV), Light-Emitting Diodes (LED) and photodetector applications 1. However, the preferred cubic phase of bulk $ CsPbI_{3} $ (α-$ CsPbI_{3} $) is usually only stable at high temperatures and it will undergo an immediate phase transformation to orthorhombic phase (δ-$ CsPbI_{3} $) after fabrication at room temperature. In this work, we have discovered a convenient CVD method to investigate the growth behavior of the cubic α-$ CsPbI_{3} $ film on the porous alumina substrate. The lead iodide and cesium iodide were used as the precursors for the deposition of $ CsPbI_{3} $. The porous alumina with high surface area and large pore volume was used as growth substrate. It was shown that the porous alumina promoted the growth of $ CsPbI_{3} $ film by absorbing the precursor and increasing the nucleation density. The prepared $ CsPbI_{3} $ film emitted strong and stable red light under ultraviolet light excitation at room temperature and ambient atmosphere. The lead iodide was absorbed on the surface of the porous alumina firstly then reacted with cesium iodide to form the $ CsPbI_{3} $ The successful preparation of the $ CsPbI_{3} $ by the direct CVD method paves the way for its large scale growth and application in optoelectronic devices. |
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Chemical Vapor Transport Deposition of Stable Cubic $ CsPbI_{3} $ Optical Films on the Porous Alumina Substrate |
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Zhao, Shichao Zhao, Yuanfang He, Fang Luo, Ripeng Li, Jingzhou Zhao, Shixi Wei, Guodan Kang, Feiyu |
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