Selective growth of diamond crystals on the apex of silicon pyramids
Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes a patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-as...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ramesham, R. [verfasserIn] Ellis, C. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1992 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials research - Berlin : Springer, 1986, 7(1992), 5 vom: Mai, Seite 1189-1194 |
|---|---|
| Übergeordnetes Werk: |
volume:7 ; year:1992 ; number:5 ; month:05 ; pages:1189-1194 |
| Links: |
|---|
| DOI / URN: |
10.1557/JMR.1992.1189 |
|---|
| Katalog-ID: |
SPR041251520 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | SPR041251520 | ||
| 003 | DE-627 | ||
| 005 | 20220112054107.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 201102s1992 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1557/JMR.1992.1189 |2 doi | |
| 035 | |a (DE-627)SPR041251520 | ||
| 035 | |a (SPR)JMR.1992.1189-e | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q ASE |
| 084 | |a 51.00 |2 bkl | ||
| 100 | 1 | |a Ramesham, R. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Selective growth of diamond crystals on the apex of silicon pyramids |
| 264 | 1 | |c 1992 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 520 | |a Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes a patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. The nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid, as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches was analyzed by scanning electron microscopy. | ||
| 700 | 1 | |a Ellis, C. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of materials research |d Berlin : Springer, 1986 |g 7(1992), 5 vom: Mai, Seite 1189-1194 |w (DE-627)320527026 |w (DE-600)2015297-8 |x 2044-5326 |7 nnns |
| 773 | 1 | 8 | |g volume:7 |g year:1992 |g number:5 |g month:05 |g pages:1189-1194 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1557/JMR.1992.1189 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_SPRINGER | ||
| 912 | |a GBV_ILN_31 | ||
| 912 | |a GBV_ILN_120 | ||
| 912 | |a GBV_ILN_293 | ||
| 912 | |a GBV_ILN_374 | ||
| 912 | |a GBV_ILN_702 | ||
| 912 | |a GBV_ILN_2005 | ||
| 912 | |a GBV_ILN_2190 | ||
| 912 | |a GBV_ILN_2336 | ||
| 912 | |a GBV_ILN_4126 | ||
| 936 | b | k | |a 51.00 |q ASE |
| 951 | |a AR | ||
| 952 | |d 7 |j 1992 |e 5 |c 05 |h 1189-1194 | ||
| author_variant |
r r rr c e ce |
|---|---|
| matchkey_str |
article:20445326:1992----::eetvgotodaodrsasnhaeo |
| hierarchy_sort_str |
1992 |
| bklnumber |
51.00 |
| publishDate |
1992 |
| allfields |
10.1557/JMR.1992.1189 doi (DE-627)SPR041251520 (SPR)JMR.1992.1189-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Ramesham, R. verfasserin aut Selective growth of diamond crystals on the apex of silicon pyramids 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes a patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. The nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid, as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches was analyzed by scanning electron microscopy. Ellis, C. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 7(1992), 5 vom: Mai, Seite 1189-1194 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:7 year:1992 number:5 month:05 pages:1189-1194 https://dx.doi.org/10.1557/JMR.1992.1189 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 7 1992 5 05 1189-1194 |
| spelling |
10.1557/JMR.1992.1189 doi (DE-627)SPR041251520 (SPR)JMR.1992.1189-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Ramesham, R. verfasserin aut Selective growth of diamond crystals on the apex of silicon pyramids 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes a patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. The nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid, as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches was analyzed by scanning electron microscopy. Ellis, C. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 7(1992), 5 vom: Mai, Seite 1189-1194 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:7 year:1992 number:5 month:05 pages:1189-1194 https://dx.doi.org/10.1557/JMR.1992.1189 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 7 1992 5 05 1189-1194 |
| allfields_unstemmed |
10.1557/JMR.1992.1189 doi (DE-627)SPR041251520 (SPR)JMR.1992.1189-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Ramesham, R. verfasserin aut Selective growth of diamond crystals on the apex of silicon pyramids 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes a patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. The nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid, as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches was analyzed by scanning electron microscopy. Ellis, C. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 7(1992), 5 vom: Mai, Seite 1189-1194 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:7 year:1992 number:5 month:05 pages:1189-1194 https://dx.doi.org/10.1557/JMR.1992.1189 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 7 1992 5 05 1189-1194 |
| allfieldsGer |
10.1557/JMR.1992.1189 doi (DE-627)SPR041251520 (SPR)JMR.1992.1189-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Ramesham, R. verfasserin aut Selective growth of diamond crystals on the apex of silicon pyramids 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes a patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. The nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid, as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches was analyzed by scanning electron microscopy. Ellis, C. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 7(1992), 5 vom: Mai, Seite 1189-1194 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:7 year:1992 number:5 month:05 pages:1189-1194 https://dx.doi.org/10.1557/JMR.1992.1189 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 7 1992 5 05 1189-1194 |
| allfieldsSound |
10.1557/JMR.1992.1189 doi (DE-627)SPR041251520 (SPR)JMR.1992.1189-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Ramesham, R. verfasserin aut Selective growth of diamond crystals on the apex of silicon pyramids 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes a patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. The nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid, as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches was analyzed by scanning electron microscopy. Ellis, C. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 7(1992), 5 vom: Mai, Seite 1189-1194 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:7 year:1992 number:5 month:05 pages:1189-1194 https://dx.doi.org/10.1557/JMR.1992.1189 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 7 1992 5 05 1189-1194 |
| language |
English |
| source |
Enthalten in Journal of materials research 7(1992), 5 vom: Mai, Seite 1189-1194 volume:7 year:1992 number:5 month:05 pages:1189-1194 |
| sourceStr |
Enthalten in Journal of materials research 7(1992), 5 vom: Mai, Seite 1189-1194 volume:7 year:1992 number:5 month:05 pages:1189-1194 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
Journal of materials research |
| authorswithroles_txt_mv |
Ramesham, R. @@aut@@ Ellis, C. @@aut@@ |
| publishDateDaySort_date |
1992-05-01T00:00:00Z |
| hierarchy_top_id |
320527026 |
| dewey-sort |
3670 |
| id |
SPR041251520 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041251520</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112054107.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201102s1992 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/JMR.1992.1189</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041251520</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)JMR.1992.1189-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ramesham, R.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Selective growth of diamond crystals on the apex of silicon pyramids</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1992</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes a patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. The nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid, as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches was analyzed by scanning electron microscopy.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ellis, C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials research</subfield><subfield code="d">Berlin : Springer, 1986</subfield><subfield code="g">7(1992), 5 vom: Mai, Seite 1189-1194</subfield><subfield code="w">(DE-627)320527026</subfield><subfield code="w">(DE-600)2015297-8</subfield><subfield code="x">2044-5326</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:7</subfield><subfield code="g">year:1992</subfield><subfield code="g">number:5</subfield><subfield code="g">month:05</subfield><subfield code="g">pages:1189-1194</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/JMR.1992.1189</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_374</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.00</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">7</subfield><subfield code="j">1992</subfield><subfield code="e">5</subfield><subfield code="c">05</subfield><subfield code="h">1189-1194</subfield></datafield></record></collection>
|
| author |
Ramesham, R. |
| spellingShingle |
Ramesham, R. ddc 670 bkl 51.00 Selective growth of diamond crystals on the apex of silicon pyramids |
| authorStr |
Ramesham, R. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)320527026 |
| format |
electronic Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut |
| collection |
springer |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
2044-5326 |
| topic_title |
670 ASE 51.00 bkl Selective growth of diamond crystals on the apex of silicon pyramids |
| topic |
ddc 670 bkl 51.00 |
| topic_unstemmed |
ddc 670 bkl 51.00 |
| topic_browse |
ddc 670 bkl 51.00 |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
Journal of materials research |
| hierarchy_parent_id |
320527026 |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
Journal of materials research |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)320527026 (DE-600)2015297-8 |
| title |
Selective growth of diamond crystals on the apex of silicon pyramids |
| ctrlnum |
(DE-627)SPR041251520 (SPR)JMR.1992.1189-e |
| title_full |
Selective growth of diamond crystals on the apex of silicon pyramids |
| author_sort |
Ramesham, R. |
| journal |
Journal of materials research |
| journalStr |
Journal of materials research |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1992 |
| contenttype_str_mv |
txt |
| container_start_page |
1189 |
| author_browse |
Ramesham, R. Ellis, C. |
| container_volume |
7 |
| class |
670 ASE 51.00 bkl |
| format_se |
Elektronische Aufsätze |
| author-letter |
Ramesham, R. |
| doi_str_mv |
10.1557/JMR.1992.1189 |
| dewey-full |
670 |
| author2-role |
verfasserin |
| title_sort |
selective growth of diamond crystals on the apex of silicon pyramids |
| title_auth |
Selective growth of diamond crystals on the apex of silicon pyramids |
| abstract |
Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes a patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. The nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid, as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches was analyzed by scanning electron microscopy. |
| abstractGer |
Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes a patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. The nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid, as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches was analyzed by scanning electron microscopy. |
| abstract_unstemmed |
Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes a patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. The nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid, as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches was analyzed by scanning electron microscopy. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 |
| container_issue |
5 |
| title_short |
Selective growth of diamond crystals on the apex of silicon pyramids |
| url |
https://dx.doi.org/10.1557/JMR.1992.1189 |
| remote_bool |
true |
| author2 |
Ellis, C. |
| author2Str |
Ellis, C. |
| ppnlink |
320527026 |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1557/JMR.1992.1189 |
| up_date |
2024-07-03T21:03:55.522Z |
| _version_ |
1803593329439408128 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041251520</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112054107.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201102s1992 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/JMR.1992.1189</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041251520</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)JMR.1992.1189-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ramesham, R.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Selective growth of diamond crystals on the apex of silicon pyramids</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1992</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes a patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. The nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid, as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches was analyzed by scanning electron microscopy.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ellis, C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials research</subfield><subfield code="d">Berlin : Springer, 1986</subfield><subfield code="g">7(1992), 5 vom: Mai, Seite 1189-1194</subfield><subfield code="w">(DE-627)320527026</subfield><subfield code="w">(DE-600)2015297-8</subfield><subfield code="x">2044-5326</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:7</subfield><subfield code="g">year:1992</subfield><subfield code="g">number:5</subfield><subfield code="g">month:05</subfield><subfield code="g">pages:1189-1194</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/JMR.1992.1189</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_374</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.00</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">7</subfield><subfield code="j">1992</subfield><subfield code="e">5</subfield><subfield code="c">05</subfield><subfield code="h">1189-1194</subfield></datafield></record></collection>
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