X-ray photoelectron spectroscopy of uv laser irradiated sapphire and alumina
Abstract X-ray photoelectron spectroscopy (XPS) was performed in as-received, thermally annealed, and laser-irradiated sapphire and alumina specimens in order to study the effects of the different treatments on surface chemistry and properties. Laser irradiations with a 308 nm wavelength laser were...
Ausführliche Beschreibung
Autor*in: |
Pedraza, A. J. [verfasserIn] Park, J. W. [verfasserIn] Meyer, H. M. [verfasserIn] Braski, D. N. [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
1994 |
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Übergeordnetes Werk: |
Enthalten in: Journal of materials research - Berlin : Springer, 1986, 9(1994), 9 vom: Sept., Seite 2251-2257 |
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Übergeordnetes Werk: |
volume:9 ; year:1994 ; number:9 ; month:09 ; pages:2251-2257 |
Links: |
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DOI / URN: |
10.1557/JMR.1994.2251 |
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SPR041269128 |
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520 | |a Abstract X-ray photoelectron spectroscopy (XPS) was performed in as-received, thermally annealed, and laser-irradiated sapphire and alumina specimens in order to study the effects of the different treatments on surface chemistry and properties. Laser irradiations with a 308 nm wavelength laser were performed in air and in a reducing atmosphere consisting of a mixture of Ar and 4% of hydrogen. The atomic percentages of carbon, aluminum, and oxygen were measured in all the specimens. Particular attention was paid to the percentages of oxygen in the oxide and in a hydroxyl state. The XPS analyses clearly established that a very thin film of metallic aluminum is formed on the surface of both alumina and sapphire substrates when they are irradiated under a reducing atmosphere. However, the film is discontinuous because it is electrically insulating. Substrates irradiated in air have metallic aluminum only for fluences below 0.4 J/$ cm^{2} $. The valence band photoemission spectra of as-received, annealed, and laser-irradiated specimens were measured. In irradiated specimens, the width of the valence band spectra was found to decrease by ∼10%. One possible cause of this decrease is the generation of point defects during laser irradiation. Electroless copper deposition occurs on sapphire and alumina substrates if their surface has been activated by laser irradiation. The time required for copper deposition was monitored by measuring the electrical resistivity in the irradiated area while the substrates were immersed in an electroless bath. The kinetics of deposition on laser-activated substrates and the XPS results show that the presence of metallic aluminum accelerates the deposition process. However, the presence of aluminum is not the sole reason for laser activation in alumina. Very strong metal-ceramic bonding is produced after thermal annealing of samples having preirradiated substrates. This result is explained in terms of the excess oxygen that is present at the ceramic surface after irradiation. | ||
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10.1557/JMR.1994.2251 doi (DE-627)SPR041269128 (SPR)JMR.1994.2251-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Pedraza, A. J. verfasserin aut X-ray photoelectron spectroscopy of uv laser irradiated sapphire and alumina 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract X-ray photoelectron spectroscopy (XPS) was performed in as-received, thermally annealed, and laser-irradiated sapphire and alumina specimens in order to study the effects of the different treatments on surface chemistry and properties. Laser irradiations with a 308 nm wavelength laser were performed in air and in a reducing atmosphere consisting of a mixture of Ar and 4% of hydrogen. The atomic percentages of carbon, aluminum, and oxygen were measured in all the specimens. Particular attention was paid to the percentages of oxygen in the oxide and in a hydroxyl state. The XPS analyses clearly established that a very thin film of metallic aluminum is formed on the surface of both alumina and sapphire substrates when they are irradiated under a reducing atmosphere. However, the film is discontinuous because it is electrically insulating. Substrates irradiated in air have metallic aluminum only for fluences below 0.4 J/$ cm^{2} $. The valence band photoemission spectra of as-received, annealed, and laser-irradiated specimens were measured. In irradiated specimens, the width of the valence band spectra was found to decrease by ∼10%. One possible cause of this decrease is the generation of point defects during laser irradiation. Electroless copper deposition occurs on sapphire and alumina substrates if their surface has been activated by laser irradiation. The time required for copper deposition was monitored by measuring the electrical resistivity in the irradiated area while the substrates were immersed in an electroless bath. The kinetics of deposition on laser-activated substrates and the XPS results show that the presence of metallic aluminum accelerates the deposition process. However, the presence of aluminum is not the sole reason for laser activation in alumina. Very strong metal-ceramic bonding is produced after thermal annealing of samples having preirradiated substrates. This result is explained in terms of the excess oxygen that is present at the ceramic surface after irradiation. Park, J. W. verfasserin aut Meyer, H. M. verfasserin aut Braski, D. N. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 9(1994), 9 vom: Sept., Seite 2251-2257 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:9 year:1994 number:9 month:09 pages:2251-2257 https://dx.doi.org/10.1557/JMR.1994.2251 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 9 1994 9 09 2251-2257 |
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10.1557/JMR.1994.2251 doi (DE-627)SPR041269128 (SPR)JMR.1994.2251-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Pedraza, A. J. verfasserin aut X-ray photoelectron spectroscopy of uv laser irradiated sapphire and alumina 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract X-ray photoelectron spectroscopy (XPS) was performed in as-received, thermally annealed, and laser-irradiated sapphire and alumina specimens in order to study the effects of the different treatments on surface chemistry and properties. Laser irradiations with a 308 nm wavelength laser were performed in air and in a reducing atmosphere consisting of a mixture of Ar and 4% of hydrogen. The atomic percentages of carbon, aluminum, and oxygen were measured in all the specimens. Particular attention was paid to the percentages of oxygen in the oxide and in a hydroxyl state. The XPS analyses clearly established that a very thin film of metallic aluminum is formed on the surface of both alumina and sapphire substrates when they are irradiated under a reducing atmosphere. However, the film is discontinuous because it is electrically insulating. Substrates irradiated in air have metallic aluminum only for fluences below 0.4 J/$ cm^{2} $. The valence band photoemission spectra of as-received, annealed, and laser-irradiated specimens were measured. In irradiated specimens, the width of the valence band spectra was found to decrease by ∼10%. One possible cause of this decrease is the generation of point defects during laser irradiation. Electroless copper deposition occurs on sapphire and alumina substrates if their surface has been activated by laser irradiation. The time required for copper deposition was monitored by measuring the electrical resistivity in the irradiated area while the substrates were immersed in an electroless bath. The kinetics of deposition on laser-activated substrates and the XPS results show that the presence of metallic aluminum accelerates the deposition process. However, the presence of aluminum is not the sole reason for laser activation in alumina. Very strong metal-ceramic bonding is produced after thermal annealing of samples having preirradiated substrates. This result is explained in terms of the excess oxygen that is present at the ceramic surface after irradiation. Park, J. W. verfasserin aut Meyer, H. M. verfasserin aut Braski, D. N. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 9(1994), 9 vom: Sept., Seite 2251-2257 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:9 year:1994 number:9 month:09 pages:2251-2257 https://dx.doi.org/10.1557/JMR.1994.2251 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 9 1994 9 09 2251-2257 |
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10.1557/JMR.1994.2251 doi (DE-627)SPR041269128 (SPR)JMR.1994.2251-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Pedraza, A. J. verfasserin aut X-ray photoelectron spectroscopy of uv laser irradiated sapphire and alumina 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract X-ray photoelectron spectroscopy (XPS) was performed in as-received, thermally annealed, and laser-irradiated sapphire and alumina specimens in order to study the effects of the different treatments on surface chemistry and properties. Laser irradiations with a 308 nm wavelength laser were performed in air and in a reducing atmosphere consisting of a mixture of Ar and 4% of hydrogen. The atomic percentages of carbon, aluminum, and oxygen were measured in all the specimens. Particular attention was paid to the percentages of oxygen in the oxide and in a hydroxyl state. The XPS analyses clearly established that a very thin film of metallic aluminum is formed on the surface of both alumina and sapphire substrates when they are irradiated under a reducing atmosphere. However, the film is discontinuous because it is electrically insulating. Substrates irradiated in air have metallic aluminum only for fluences below 0.4 J/$ cm^{2} $. The valence band photoemission spectra of as-received, annealed, and laser-irradiated specimens were measured. In irradiated specimens, the width of the valence band spectra was found to decrease by ∼10%. One possible cause of this decrease is the generation of point defects during laser irradiation. Electroless copper deposition occurs on sapphire and alumina substrates if their surface has been activated by laser irradiation. The time required for copper deposition was monitored by measuring the electrical resistivity in the irradiated area while the substrates were immersed in an electroless bath. The kinetics of deposition on laser-activated substrates and the XPS results show that the presence of metallic aluminum accelerates the deposition process. However, the presence of aluminum is not the sole reason for laser activation in alumina. Very strong metal-ceramic bonding is produced after thermal annealing of samples having preirradiated substrates. This result is explained in terms of the excess oxygen that is present at the ceramic surface after irradiation. Park, J. W. verfasserin aut Meyer, H. M. verfasserin aut Braski, D. N. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 9(1994), 9 vom: Sept., Seite 2251-2257 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:9 year:1994 number:9 month:09 pages:2251-2257 https://dx.doi.org/10.1557/JMR.1994.2251 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 9 1994 9 09 2251-2257 |
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10.1557/JMR.1994.2251 doi (DE-627)SPR041269128 (SPR)JMR.1994.2251-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Pedraza, A. J. verfasserin aut X-ray photoelectron spectroscopy of uv laser irradiated sapphire and alumina 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract X-ray photoelectron spectroscopy (XPS) was performed in as-received, thermally annealed, and laser-irradiated sapphire and alumina specimens in order to study the effects of the different treatments on surface chemistry and properties. Laser irradiations with a 308 nm wavelength laser were performed in air and in a reducing atmosphere consisting of a mixture of Ar and 4% of hydrogen. The atomic percentages of carbon, aluminum, and oxygen were measured in all the specimens. Particular attention was paid to the percentages of oxygen in the oxide and in a hydroxyl state. The XPS analyses clearly established that a very thin film of metallic aluminum is formed on the surface of both alumina and sapphire substrates when they are irradiated under a reducing atmosphere. However, the film is discontinuous because it is electrically insulating. Substrates irradiated in air have metallic aluminum only for fluences below 0.4 J/$ cm^{2} $. The valence band photoemission spectra of as-received, annealed, and laser-irradiated specimens were measured. In irradiated specimens, the width of the valence band spectra was found to decrease by ∼10%. One possible cause of this decrease is the generation of point defects during laser irradiation. Electroless copper deposition occurs on sapphire and alumina substrates if their surface has been activated by laser irradiation. The time required for copper deposition was monitored by measuring the electrical resistivity in the irradiated area while the substrates were immersed in an electroless bath. The kinetics of deposition on laser-activated substrates and the XPS results show that the presence of metallic aluminum accelerates the deposition process. However, the presence of aluminum is not the sole reason for laser activation in alumina. Very strong metal-ceramic bonding is produced after thermal annealing of samples having preirradiated substrates. This result is explained in terms of the excess oxygen that is present at the ceramic surface after irradiation. Park, J. W. verfasserin aut Meyer, H. M. verfasserin aut Braski, D. N. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 9(1994), 9 vom: Sept., Seite 2251-2257 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:9 year:1994 number:9 month:09 pages:2251-2257 https://dx.doi.org/10.1557/JMR.1994.2251 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 9 1994 9 09 2251-2257 |
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10.1557/JMR.1994.2251 doi (DE-627)SPR041269128 (SPR)JMR.1994.2251-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Pedraza, A. J. verfasserin aut X-ray photoelectron spectroscopy of uv laser irradiated sapphire and alumina 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract X-ray photoelectron spectroscopy (XPS) was performed in as-received, thermally annealed, and laser-irradiated sapphire and alumina specimens in order to study the effects of the different treatments on surface chemistry and properties. Laser irradiations with a 308 nm wavelength laser were performed in air and in a reducing atmosphere consisting of a mixture of Ar and 4% of hydrogen. The atomic percentages of carbon, aluminum, and oxygen were measured in all the specimens. Particular attention was paid to the percentages of oxygen in the oxide and in a hydroxyl state. The XPS analyses clearly established that a very thin film of metallic aluminum is formed on the surface of both alumina and sapphire substrates when they are irradiated under a reducing atmosphere. However, the film is discontinuous because it is electrically insulating. Substrates irradiated in air have metallic aluminum only for fluences below 0.4 J/$ cm^{2} $. The valence band photoemission spectra of as-received, annealed, and laser-irradiated specimens were measured. In irradiated specimens, the width of the valence band spectra was found to decrease by ∼10%. One possible cause of this decrease is the generation of point defects during laser irradiation. Electroless copper deposition occurs on sapphire and alumina substrates if their surface has been activated by laser irradiation. The time required for copper deposition was monitored by measuring the electrical resistivity in the irradiated area while the substrates were immersed in an electroless bath. The kinetics of deposition on laser-activated substrates and the XPS results show that the presence of metallic aluminum accelerates the deposition process. However, the presence of aluminum is not the sole reason for laser activation in alumina. Very strong metal-ceramic bonding is produced after thermal annealing of samples having preirradiated substrates. This result is explained in terms of the excess oxygen that is present at the ceramic surface after irradiation. Park, J. W. verfasserin aut Meyer, H. M. verfasserin aut Braski, D. N. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 9(1994), 9 vom: Sept., Seite 2251-2257 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:9 year:1994 number:9 month:09 pages:2251-2257 https://dx.doi.org/10.1557/JMR.1994.2251 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 9 1994 9 09 2251-2257 |
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670 ASE 51.00 bkl X-ray photoelectron spectroscopy of uv laser irradiated sapphire and alumina |
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X-ray photoelectron spectroscopy of uv laser irradiated sapphire and alumina |
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X-ray photoelectron spectroscopy of uv laser irradiated sapphire and alumina |
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Pedraza, A. J. |
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Pedraza, A. J. Park, J. W. Meyer, H. M. Braski, D. N. |
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x-ray photoelectron spectroscopy of uv laser irradiated sapphire and alumina |
title_auth |
X-ray photoelectron spectroscopy of uv laser irradiated sapphire and alumina |
abstract |
Abstract X-ray photoelectron spectroscopy (XPS) was performed in as-received, thermally annealed, and laser-irradiated sapphire and alumina specimens in order to study the effects of the different treatments on surface chemistry and properties. Laser irradiations with a 308 nm wavelength laser were performed in air and in a reducing atmosphere consisting of a mixture of Ar and 4% of hydrogen. The atomic percentages of carbon, aluminum, and oxygen were measured in all the specimens. Particular attention was paid to the percentages of oxygen in the oxide and in a hydroxyl state. The XPS analyses clearly established that a very thin film of metallic aluminum is formed on the surface of both alumina and sapphire substrates when they are irradiated under a reducing atmosphere. However, the film is discontinuous because it is electrically insulating. Substrates irradiated in air have metallic aluminum only for fluences below 0.4 J/$ cm^{2} $. The valence band photoemission spectra of as-received, annealed, and laser-irradiated specimens were measured. In irradiated specimens, the width of the valence band spectra was found to decrease by ∼10%. One possible cause of this decrease is the generation of point defects during laser irradiation. Electroless copper deposition occurs on sapphire and alumina substrates if their surface has been activated by laser irradiation. The time required for copper deposition was monitored by measuring the electrical resistivity in the irradiated area while the substrates were immersed in an electroless bath. The kinetics of deposition on laser-activated substrates and the XPS results show that the presence of metallic aluminum accelerates the deposition process. However, the presence of aluminum is not the sole reason for laser activation in alumina. Very strong metal-ceramic bonding is produced after thermal annealing of samples having preirradiated substrates. This result is explained in terms of the excess oxygen that is present at the ceramic surface after irradiation. |
abstractGer |
Abstract X-ray photoelectron spectroscopy (XPS) was performed in as-received, thermally annealed, and laser-irradiated sapphire and alumina specimens in order to study the effects of the different treatments on surface chemistry and properties. Laser irradiations with a 308 nm wavelength laser were performed in air and in a reducing atmosphere consisting of a mixture of Ar and 4% of hydrogen. The atomic percentages of carbon, aluminum, and oxygen were measured in all the specimens. Particular attention was paid to the percentages of oxygen in the oxide and in a hydroxyl state. The XPS analyses clearly established that a very thin film of metallic aluminum is formed on the surface of both alumina and sapphire substrates when they are irradiated under a reducing atmosphere. However, the film is discontinuous because it is electrically insulating. Substrates irradiated in air have metallic aluminum only for fluences below 0.4 J/$ cm^{2} $. The valence band photoemission spectra of as-received, annealed, and laser-irradiated specimens were measured. In irradiated specimens, the width of the valence band spectra was found to decrease by ∼10%. One possible cause of this decrease is the generation of point defects during laser irradiation. Electroless copper deposition occurs on sapphire and alumina substrates if their surface has been activated by laser irradiation. The time required for copper deposition was monitored by measuring the electrical resistivity in the irradiated area while the substrates were immersed in an electroless bath. The kinetics of deposition on laser-activated substrates and the XPS results show that the presence of metallic aluminum accelerates the deposition process. However, the presence of aluminum is not the sole reason for laser activation in alumina. Very strong metal-ceramic bonding is produced after thermal annealing of samples having preirradiated substrates. This result is explained in terms of the excess oxygen that is present at the ceramic surface after irradiation. |
abstract_unstemmed |
Abstract X-ray photoelectron spectroscopy (XPS) was performed in as-received, thermally annealed, and laser-irradiated sapphire and alumina specimens in order to study the effects of the different treatments on surface chemistry and properties. Laser irradiations with a 308 nm wavelength laser were performed in air and in a reducing atmosphere consisting of a mixture of Ar and 4% of hydrogen. The atomic percentages of carbon, aluminum, and oxygen were measured in all the specimens. Particular attention was paid to the percentages of oxygen in the oxide and in a hydroxyl state. The XPS analyses clearly established that a very thin film of metallic aluminum is formed on the surface of both alumina and sapphire substrates when they are irradiated under a reducing atmosphere. However, the film is discontinuous because it is electrically insulating. Substrates irradiated in air have metallic aluminum only for fluences below 0.4 J/$ cm^{2} $. The valence band photoemission spectra of as-received, annealed, and laser-irradiated specimens were measured. In irradiated specimens, the width of the valence band spectra was found to decrease by ∼10%. One possible cause of this decrease is the generation of point defects during laser irradiation. Electroless copper deposition occurs on sapphire and alumina substrates if their surface has been activated by laser irradiation. The time required for copper deposition was monitored by measuring the electrical resistivity in the irradiated area while the substrates were immersed in an electroless bath. The kinetics of deposition on laser-activated substrates and the XPS results show that the presence of metallic aluminum accelerates the deposition process. However, the presence of aluminum is not the sole reason for laser activation in alumina. Very strong metal-ceramic bonding is produced after thermal annealing of samples having preirradiated substrates. This result is explained in terms of the excess oxygen that is present at the ceramic surface after irradiation. |
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title_short |
X-ray photoelectron spectroscopy of uv laser irradiated sapphire and alumina |
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